NSC 5962-9153101VYA, 5962-9153101VXA, 5962-9153101MYA, 5962-9153101MXA, 100325MW8 Datasheet

100325
Low Power Hex ECL-to-TTL Translator

General Description

The 100325 is a hex translator for converting F100K logic
levels to TTLlogiclevels.Differentialinputsalloweachcircuit
to be used as an inverting, non-inverting or differential re­ceiver.An internal reference voltage generator provides V

BB

for single-ended operation, or for use in Schmitt trigger appli­cations. All inputs have 50 kΩ pull-down resistors.When the
inputs are either unconnected or at the same potential the
outputs will go low.

When used in single-ended operation the apparent input
threshold of the true inputs is 20 mV to 40 mV higher (posi­tive) than the threshold of the complementary inputs. The
V

EE

and V

TTL

power may be applied in either order.

Features

n Pin/function compatible with 100125
n Meets 100125 AC specifications
n 50%power reduction of the 100125
n Differential inputs with built in offset
n Standard FAST

®

outputs

n 2000V ESD protection
n −4.2V to −5.7V operating range
n Available to Microcircuit Drawing

(SMD) 5962-9153101

Logic Diagram

Pin Names Description

D

0–D5

Data Inputs

D

0–D5

Inverting Data Inputs

Q

0–Q5

Data Outputs

FAST®is a registered trademark of FairchildSemiconductor.

DS100314-4

August 1998

100325 Low Power Hex ECL-to-TTL Translator

© 1998 National Semiconductor Corporation DS100314 www.national.com

Connection Diagrams Truth Table

Inputs Outputs

D

n

D

n

Q

n

LH L
HL H
LL L
HH L

Open Open L

V

EE

V

EE

L

LV

BB

L

HV

BB

H

V

BB

LH

V

BB

HL

H

=

HIGH Voltage Level

L=LOW Voltage Level

24-Pin DIP

DS100314-1

24-Pin Quad Cerpak

DS100314-2

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Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

Above which the useful life may be impaired.
Storage Temperature (T

STG

) −65˚C to +150˚C

Maximum Junction Temperature (T

J

)

Ceramic +175˚C

V

EE

Pin Potential to Ground Pin −7.0V to +0.5V

V

TTL

Pin Potential to Ground Pin −0.5V to +6.0V

Input Voltage (DC) V

EE

to +0.5V

Voltage Applied to Output

in HIGH State (with V

CC

=

0V) −0.5V to V

CC

Current Applied to Output

in LOW State (Max) twice the rated I

OL

(mA)

ESD (Note 2) ≥2000V

Recommended Operating
Conditions

Case Temperature (TC)

Military −55˚C to +125˚C

Supply Voltage (V

EE

) −5.7V to −4.2V

Note 1: Absolute maximum ratings are those values beyond which the de­vice may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.

Note 2: ESD testing conforms to MIL-STD-883, Method 3015.

Military Version

DC Electrical Characteristics

V

EE

=

−4.2V to −5.7V, V

CC

=

V

CCA

=

GND, T

C

=

−55˚C to +125˚C, C

L

=

50 pF, V

TTL

=

+4.5V to +5.5V

Symbol Parameter Min Max Units T

C

Conditions Notes

V

BB

Output Reference Voltage −1380 −1260 0˚C to +125˚C I

VBB

=

−3 µA, V

EE

=

−4.2V
(Notes 3,

4, 5)

mV I

VBB

=

−2.1 mA V

EE

=

−5.7V

−1396 −1260 −55˚C I

VBB

=

−3 mA

V

IH

Input HIGH Voltage −1165 −870 mV −55˚C to +125˚C Guaranteed HIGH Signal for All Inputs

(Notes 3,

4, 5, 6)

(with One Input Tied to V

BB

)

V

IL

Input LOW Voltage −1830 −1475 mV −55˚C to +125˚C Guaranteed LOW Signal for All Inputs

(Notes 3,

4, 5, 6)

(with One Input Tied to V

BB

)

V

OH

Output HIGH Voltage 2.5 mV 0˚C to +125˚C I

OH

=

−2.0 mA V

IN

=

V

IH (Max)

(Notes 3,

4, 5)

2.4 −55˚C or V

IL (Min)

V

OL

Output LOW Voltage 0.5 mV −55˚C to +125˚C I

OL

=

20 mA

V

DIFF

Input Voltage Differential 150 mV −55˚C to +125˚C Required for Full Output Swing

(Notes 3,

4, 5)

V

CM

Common Mode Voltage −2000 −500 mV −55˚C to +125˚C

(Notes 3,

4, 5, 6)

I

IH

Input HIGH Current 350 µA 0˚C to +125˚C V

IN

=

V

IH (Max),D0–D5

=

V

BB

,

(Notes 3,

4, 5)

500 −55˚C D

0–D5

=

V

IL (Min)

I

IL

Input LOW Current 0.50 µA −55˚C to +125˚C V

IN

=

V

IL (Min),D0–D5

=

V

BB

(Notes 3,

4, 5)

I

OS

Output Short Circuit −150 −60 mA −55˚C to +125˚C V

OUT

=

GND

(Notes 3,

4, 5)

Current Test One Output at a Time

I

CEX

Output HIGH 250 µA −55˚C to +125˚C V

OUT

=

5.5V

(Notes 3,

4, 5)

Leakage Current

I

EE

VEEPower Supply Current −35 −12 mA −55˚C to +125˚C D0–D

5

=

V

BB

(Notes 3,

4, 5)

I

TTL

V

TTL

Power Supply Current 65 mA −55˚C to +125˚C D0–D

5

=

V

BB

(Notes 3,

4, 5)

Note 3: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case
condition at cold temperatures.

Note 4: Screen tested 100%on each device at −55˚C, +25˚C, and +125˚C, Subgroups 1, 2, 3, 7, and 8.
Note 5: Sample tested (Method 5005, Table I) on each manufactured lot at −55˚C, + 25˚C, and +125˚C, SubgroupsA1, 2, 3, 7, and 8.
Note 6: Guaranteed by applying specified input condition and testing V

OH/VOL

.

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