System module block diagram.............................................................................................................................................1–7
Absolute maximum ratings.................................................................................................................................................1–10
Phone modes of operation..................................................................................................................................................1–10
Power distribution.................................................................................................................................................................1–14
Camera interfaces...................................................................................................................................................................1–19
Back camera.......................................................................................................................................................................1–19
Camera construction........................................................................................................................................................1–20
Back camera slider detection switch..........................................................................................................................1–22
Front camera......................................................................................................................................................................1–24
User interface...........................................................................................................................................................................1–25
Display and keyboard backlight...................................................................................................................................1–28
ALS interface.......................................................................................................................................................................1–29
Retu EM ASIC.......................................................................................................................................................................1–30
Tahvo EM ASIC.....................................................................................................................................................................1–30
RAP3G memories NOR flash and SDRAM....................................................................................................................1–30
USB IF electrical characteristics....................................................................................................................................1–37
Audio signal electrical characteristics........................................................................................................................1–39
SIM IF connections............................................................................................................................................................1–39
UI module connector and IF connections.................................................................................................................1–42
Display connector and interface connections..........................................................................................................1–44
Camera interface connections and electrical characteristics..............................................................................1–45
Front camera interface and electrical characteristics...........................................................................................1–47
Flash LED interface and electrical characteristics...................................................................................................1–49
Introduction to receiver functionality........................................................................................................................1–50
Introduction to transmitter functionality.................................................................................................................1–51
Frequency synthesizers.........................................................................................................................................................1–56
Frequency mappings...................................................................................................................................................................1–58
Table 1 Camera specifications..................................................................................................................................................1–20
Table 3 LED driver control signals............................................................................................................................................1–29
Table 4 ALS resistor values.........................................................................................................................................................1–29
Table 9 Battery IF electrical characteristics..........................................................................................................................1–41
Table 10 User interface connections......................................................................................................................................1–42
Table 12 Camera interface connections................................................................................................................................1–45
Table 13 Camera CCP IF electrical characteristics...............................................................................................................1–46
Table 14 Camera supply voltage characteristics.................................................................................................................1–47
Table 15 Camera control IF electrical characteristics........................................................................................................1–47
Table 16 Front camera interface connections.....................................................................................................................1–47
Table 17 Front camera voltage levels from Helen point of view...................................................................................1–49
Table 18 Front camera voltage levels from camera module point of view...............................................................1–49
Table 19 Front camera supply voltage characteristics......................................................................................................1–49
Table 20 Flash LED interface connections.............................................................................................................................1–49
Figure 3 OMAP1710 high level block diagram.......................................................................................................................1–9
Figure 4 State diagram...............................................................................................................................................................1–12
Figure 5 Power distribution diagram.....................................................................................................................................1–14
Figure 6 System start-up timing..............................................................................................................................................1–16
Figure 11 Block diagram of the back camera module......................................................................................................1–20
Figure 12 Camera module cross section and assembly principle..................................................................................1–21
Figure 13 Camera module bottom view including serial numbering..........................................................................1–21
Figure 15 Simplified flash LED connection............................................................................................................................1–24
Figure 16 Front camera connections......................................................................................................................................1–25
Figure 17 General diagram of the LCD module...................................................................................................................1–25
Figure 19 ALS HW implementation.........................................................................................................................................1–29
Figure 35 GSM/EDGE power control topology and control signals................................................................................1–55
Figure 36 Power control signal usage in GSM (GMSK) and EDGE (8PSK) transmission............................................1–55
Figure 37 Phase locked loop in N7500 and N7501 (PLL)..................................................................................................1–56
Figure 38 RF supply connections from the BB mixed mode ASIC..................................................................................1–57
The device consists of two different main modules: transceiver and UI. The transceiver board consists of
baseband and RF components. The UI board consists of key domes and keypad backlights. Connection between
the UI and the transceiver board is established via a board-to-board spring connector.
Note: In this description, the user interface HW covers display, camera, keyboard, keyboard backlight
Digital baseband consists of an ISA (Intelligent Software Architecture) based modem and Symbian based
application sections. The modem functionality is in RAP3G, and OMAP acts as a platform for Symbian applications.
The terms ISA and Symbian are used refer to the software environment of these devices.
The modem section consists of a RAP3G ASIC with NOR FLASH and SDRAM memory as the core. RAP3G supports
cellular protocols of WCDMA (3GPP R-4) and GSM (EDGE class 10, GPRS phase2). The modem SDRAM memory has
64Mbits of memory and NOR flash has 64Mbits of memory. RAP3G operates with the system clock of 38.4 MHz,
which comes from the VCTCXO.
The application section includes an OMAP ASIC with DDR/NAND combo memory as the core. The OMAP ASIC uses
a 19.2MHz clock, which comes from the RAP3G divided by two from the 38.4 MHz system clock.
Figure 2 Functional block diagram
OMAP processor (Helen3 (OMAP1710)) is also called an application ASIC because it is processing application SW
and handles the UI SW. It consists of OMAP3.3 and peripheral subsystems such as camera, display and keyboard
driver blocks.
USB & modem interfaceThese two modules enable the platform to support a
universal serial link and a dedicated modem
interface, enabling a high data transfer rate between
the modem and the application chip.
System componentsSystem components are group of modules
responsible for managing system interactions such
as interrupt, clock control and idle.
Peripheral subsystemThe peripheral subsystem defines all the
components used to interface Helen3 (OMAP1710)
with specific external devices such as camera,
keyboard, display, etc.
Absolute maximum ratings
SignalMinNom MaxUnit Notes
Battery voltage (idle)-0.3+4.5VBattery voltage maximum value is
specified during charging is active
Battery voltage (Call)+3.
2
Charger input voltage-0.3+16VV
Back-Up supply voltage02.52.7VMaximum capacity of the backup
+4.3VBattery voltage maximum value is
specified during charging is active
power supply assumed to be 15 µAh.
Phone modes of operation
ModeDescription
NO_SUPPLY(dead) mode means that the main battery is not present or its voltage is too low (below
RETU master reset threshold) and that the back-up battery voltage is too low.
BACK_UPThe main battery is not present or its voltage is too low but back-up battery voltage is
adequate and the 32kHz oscillator is running (RTC is on).
PWR_OFFIn this mode (warm), the main battery is present and its voltage is over RETU master reset
threshold. All regulators are disabled, PurX is on low state, the RTC is on and the oscillator
is on. PWR_OFF (cold) mode is almost the same as PWR_OFF (warm), but the RTC and the
oscillator are off.
RESETRESET mode is a synonym for start-up sequence. In this mode certain regulators are
enabled and after they and RFClk have stabilized, the system reset (PurX) is released and
PWR_ON mode entered. RESET mode uses 32kHz clock to count the REST mode delay
(typically 16ms).
SLEEPSLEEP mode is entered only from PWR_ON mode with the aid of SW when the system’s
activity is low. There are in principle three different sleep modes:
• OMAP1710 sleep
• RAP3G sleep
• OMAP and RAP3G sleep (deep sleep)
In SLEEP mode RETU’s regulators VIO, VDRAM, VSIM1, VSIM2, VAUX and Vana are in low
quiescent current mode (output voltages still present but regulators will not give as much
current out). Other regulators including VR1 supplying system clock oscillator are
disabled.
In SLEEP mode, TAHVO VCORE SMPS regulator is in low quiescent current mode (if sleep
mode is not internally disabled). Linear regulator VOUT state depends on the accessory
connected to the system connector (Pop-Port), if there is any.
FLASHINGFLASHING mode is for SW downloading. FLASHING mode is not really a RETU or TAHVO
state but rather a system state. From RETU and TAHVO point of view, it is like PWR_ON.
The state is entered from PWR_ON. It is possible to use external voltage (VPP) during
flashing to speed up the process (provided that the memory components support the
feature).
The master reset threshold controls the internal reset of Retu / (Tahvo). If battery voltage is above VMSTR,
Tahvo’s charging control logic is alive. Also, RTC is active and supplied from the main battery. Above VMSTR,
Tahvo allows the system to be powered on although this may not succeed due to voltage drops during start
up. SW can also consider battery voltage too low for operation and power down the system.
Power key
The system boots up when power key is pressed (adequate battery voltage, VBAT, present).
Power down can be initiated by pressing the power key again (the system is powered down with the aid of
SW). Power on key is connected to Retu ASIC via PWRONX signal.
• backlight SMPS
All the above are powered by the main battery voltage.
Battery voltage is also used on the RF side for power amplifiers (GSM PA & WCDMA PA) and for RF ASICs Hinku
(Rx) & Vinku(Tx).
Discrete power supplies are used to generate 2.8V to BT, 1.5V for the camera IO voltage, 2.8V for the front camera
IO voltage, 1.3V/1.5V for Helen 3 and 18V for the backlight LEDs.
The device supports both 1.8V/3V SIM cards which are powered by RETU / VSIM1. RETUs VSIM2 is used to power
RS MMC 1.8V only. USB accessories which needs power from the device are powered by TAHVO / VOUT.
Because LED driver in TAHVO is not used, the external SMPS is used instead. External LED SMPS is still controlled
by TAHVO and powered by battery voltage.
System power-up
After inserting the main battery, regulators started by HW are enabled. SW checks, if there is some reason to
keep the power on. If not, the system is set to power off state by watchdog. Power up can be caused by the
following reasons:
• Power key is pressed
• Charger is connected
• RTC alarm occurs
• MBUS wake-up
After that:
• Retu activates sleep clock and VANA, VDRAM, VIO and VR1 regulators.
• Voltage appearing at Retu’s RSTX pin is used for enabling Tahvo ASIC.
• Tahvo enables VCORE regulator and its internal RC-oscillator (600kHz).
• VCTCXO regulator is set ON and RF clock (main system clock) is started to produce.
• Retu will release PURX ~ 16ms after power up is enabled (the RF clock is then stable enough).
• Synchronizing clock (2.4MHz) for Tahvo is started to be produced. After PURX is released and two rising edges
of 2.4MHz synchronous clock have been detected in SMPSClk input Tahvo is starting to use that instead of
600kHz internal RC-oscillator.
• HW start-up procedure has been finalized and the system is up and running. Now it is possible for SW to
There are two main clocks in the system: 38.4MHz RF clock produced by VCTCXO in RF section and 32.768kHz
sleep clock produced by RETU with an external crystal.
RF clock is generated only when VCTCXO is powered on by RETU regulator. Regulator itself is activated by SleepX
signals from both RAP3G and Helen3. When both CPUs are on sleep, RF clock is stopped.
RF clock is used by RAP3G that then provides (divided) 19.2MHz SysClk further to OMAP. Both RAPG and Helen3
have internal PLLs which then create clock signals for other peripheral devices/interfaces like RS MMC, SIM, CCP,
I2C and memories.
32k Sleep Clock is always powered on after startup. Sleep clock is used by RAP3G and OMAP for low-power
operation.
SMPS Clk is 2.4MHz clock line from RAP3G to Tahvo used for switch mode regulator synchronizing in active
mode. In deep sleep mode, when VCTCXO is off, this signal is set to '0'-state.
BT Clk is 38.4MHz signal from Hinku ASIC to the Bluetooth system.
CLK600 is 600KHz signal from Tahvo to APE VCORE SMPS. The clock source is internal RC oscillator in Tahvo (during
the power-up sequence) or RAP3G SMPS Clk divided by 4 after the power-up sequence.
The Bluetooth and FM radio solutions of the device are realised with a combined BTFM module. This module
has the Bluetooth solution and FM radio solution combined into a single component. However, the two solutions
are electrically isolated from one another.
Bluetooth
Bluetooth provides a fully digital link for communication between a master unit and one or more slave units.
The system provides a radio link that offers a high degree of flexibility to support various applications and
product scenarios. Data and control interface for a low power RF module is provided. Data rate is regulated
between the master and the slave.
The device Bluetooth is based on CSR's BC4 BT ASIC (BTHFM1.0).
The UART1 interface handles the transfer of control and data information between OMAP1710 and the BT system
(BC4).
The PCM interface is used for audio data transfer between RAP3G and the BT system (BC4).
FM radio
The second part of the BTFM module contains the FM radio.
The antenna for the FM radio is provided by plugging in an external wired headset to the Pop-port™ connector.
It is not possible to listen to the FM radio without a wired headset connected. The FM radio is controlled by I2C
commands from RAP3G. The audio output of the FM radio is fed to the headset via the RETU ASIC, so the rest of
the phone can sleep while the FM radio is active.
USB
USB (Universal Serial Bus) provides a wired connectivity between a USB host PC and peripheral devices.
USB is a differential serial bus for USB devices. USB controller (RAP3G) supports USB specification revision 2.0
with full speed USB (12 Mbps). The device is connected to the USB host through the Pop-Port™ connector. The
USB bus is hot plugged capable, which means that USB devices may be plugged in/out at any time.
SIM interface
The device has one SIM (Subscriber Identification Module) interface. The SIM card is located under the battery.
The SIM interface consists of an internal interface between RAP3G and Retu and of an external interface between
Retu and SIM contacts. The main SIM interface functionality is in RAP3G while Retu takes care of power up/down,
card detection, ATR (Answer To Reset) counting and level shifting. For Retu external SIM IF connections, see SIM
Retu handles the detection of the SIM card. The detection method is based in the BSI line. Because of the location
of the SIM card, removing the battery causes a quick power down of the SIM IF.
The Retu SIM1 interface supports both 1.8V and 3.0V SIM cards. The SIM interface voltage is first 1.8V when the
SIM card is inserted, and if the card does not response to the ATR a 3V interface voltage is used.
The data communication between the card and the phone is asynchronous half duplex, and the clock supplied
to the card is 1-5MHz, which is 3.2MHz by default (in GSM system). The data baud rate is the SIM card clock
frequency divided by 372 (by default), 64, 32 or 16.
RS MMC interface
The reduced size (24mm x 18mm x 1.4mm) multimedia card slot is located under the battery. The device
supports RS MMC hot insertion, which enables to remove/insert the card when the phone is powered on.
The RS MMC card is connected to the Helen3 processor MMC/SDIO2 (1.8V) interface. The MMC interface is shown
in the following figure:
Figure 9 MMC interface
The basic multimedia card concept is based on the following communication signals: CLK, CMD and DAT.
With each cycle of the CLK signal, one bit transfer on the DAT and CMD line is performed. The maximum CLK
CMD is a bi-directional command channel used for card initialization and data transfer commands. The CMD
signal has two operational modes: open-drain and push-pull mode. The open-drain mode is used for card
initialization and the push-pull mode for fast command transfer. CMD commands are sent by the host and CMD
responses are sent by the card.
DAT is a bi-directional data channel, which operates in the push-pull mode.
The detection of the RS MMC card removal/insertion is done via the RS MMC cover switch. The RS MMC cover
switch gives an interrupt to the SW when the cover is opened or closed. After opening the RS MMC cover lid (RS
MMC SW signal is connected to GND via cover switch), SW powers down the card and switches off the RS MMC
power supply (VSIM2). When the RS MMC cover lid is closed (RS MMC SW signal is internally connected in Helen3
to 1.8V), the card inserted is identified.
Note: Removing the RS MMC while writing to it, may corrupt the data stored in the card.
See Also
• RS MMC interface connections (Page 1–39)
Battery interface
The battery interface supports the NMP 3-pole battery interface. The interface consists of three connectors:
VBAT, BSI and GND.
The BSI line is used to recognize the battery capacity by a battery internal pull down resistor.
Figure 10 Battery pin order
Battery temperature is estimated by measuring separate battery temperature NTC via the BTEMP line, which is
located on the transceiver PWB, at a place where the phone temperature is most stabile.
For service purposes, the device SW can be forced into local mode by using pull down resistors connected to
the BSI line.
Camera interfaces
Back camera
The back camera of the device uses a 2.0 megapixel camera module with a sensor resolution of 1600 x 1200.
The following block diagram shows how a CCP bus is used to transfer image data from the camera module to
the phone engine. This bi-directional control bus is a software-implemented I2C interface.
The camera regulator N1470 powers the digital parts of the camera, and a VAUX power rail is used for powering
the analogue parts.
A CAMVCTRL signal (Vctrl) is used for activating the camera module. When the Vctrl signal is High, the module
enters the power on mode. When the signal is Low, the module enters the power off mode.
A CAMCLK signal feeds the system clock for the camera module.
This section describes the mechanical construction of the camera module for getting a better understanding
of the actual mechanical structure of the module.
Table 1 Camera specifications
Sensor typeCMOS Sensor
Photo detectors2 million
F number/Aperturef/3.2
Focal length4.8 mm (35 mm equivalent 37 mm)
Focus range40 cm to infinity
Still Image resolutions1600 x 1200, 640 x 480
Still images file formatEXIF (JPEG), *.jpg
Video resolutions352 x 288, 176 x 144, 128 x 96. All 15 frames per
second
Video clip lengthMaximal clip length is 1 hour or limited to MMS size
The camera module as a component is not a repairable part, meaning that the components inside the module
may not be changed. Cleaning dust from the front face is allowed only. Use clean compressed air.
The camera module uses socket type connecting. For versioning, laser marked serial numbering is used on the
PWB.
The main parts of the module are:
• Lens unit including lens aperture.
• Infrared filter; used to prevent infrared light from contaminating the image colors. The IR filter is glued to
the EMI shielded camera body.
• Camera body; made of conductive metallized plastic and attached to the PWB with glue.
• Sensor array including DSP functions is glued and wire-bonded to the PWB.
• PWB, FR-4 type
• Passive components
• Camera protection window; part of the phone cover mechanics
• Dust gasket between the lens unit and camera protection window
Back camera slider detection switch
The back camera and flash LED have a cover slider, which position is detected with a slider switch (slider sensor).
When the slider covers the back camera and flash LED (upper position), the slider switch is open circuit (not
pressed) and the OMAP1710 is connected to VIO. When the slider is slid down, the switch is pressed and it
connects the Helen pin mcbsp1_sync to GND (typical 160mV) and activates the back camera application
The device back camera has a flash LED (FLED), providing better lighting conditions in darker environments. The
same LED is also used as an indicator light to indicate video clip recording.
The FLED is located next to the back camera under the camera slide. It cannot be used when the slide is closed,
and it is only used in the still image mode or as an indicator for video recording or image capturing. The
operating range of the FLED is approximately 1 m (~22 Lux) and 1.5 m (~9 Lux).
The connections between the main PWB and the FLED are implemented with a small PWB attached to the device
mechanics.
The FLED has four white LEDs connected in series in one module. The module also includes a lens with its plastic
housing.
The dimensions of the FLED are 6.5 x 7.5 x 3.5 mm.
The front camera has VGA (640x480) resolution, and it is mainly used for video calls. It can also be used as a still
camera and camcorder.
The front camera is controlled and its data is collected by Helen APE. The I/O voltage of Helen is 1.8V and the I/
O voltage of the camera is 2.8V. Because of this, a level shifter is used for the interface between Helen and the
camera.
The front camera has the following characteristics:
Sensor type:CMOS
Sensor Photo detectors:VGA
F number/Aperture:f/2.9
Focal length:4.5 mm
Focus range:40 cm to infinity
Still Image resolutions:640 x 480
Video resolutions:176 x 144, 128 x 96 both 15 frames per second.
Video clip length:30 seconds or free, maximal clip length in free mode is 1
hour
Video file format:MPEG-4 *.mp4 and 3GPP, *.3gp (64 kbps in short clip
mode, 128 kbps in maximum mode)
Exposure:Automatic and manual
White Balance:Automatic or adjustable
ISO:250 - 1000 (Automatic)
Capture Modes:Still capture mode, video mode, sequence mode 10,20 or
• Partial display function Power saving by pausing display process on part of the screen.
• Built-in RAM capacity 176rows x 208lines x 18bits = 658,944 bits
The display has two different operating modes:
1 Normal mode, Full screen, 260k colours
2 Normal Partial mode, 260k colors but only part of the display is active
The module includes:
• FPWB foil including connector and discretes and driver circuits
• display panel (glass)
• drivers including display controller and 176 x 208 x 18 bits RAM
• backlight system: lightguide, LEDs and necessary optical sheets
• supporting mechanics
• metal frame (stainless steel)
• plastic frame
The interconnection between the LCD module and the Nokia engine is implemented with a 24-pin board-toboard connector.
Display is controlled via MeSSi-8 interface by Helen3. All MeSSi-8 signals go through the EMC filtering ASIPs.
The display module does not require any tunings in service.
Keyboard
The device keyboard is connected to the main PWB with a board-to-board connector.
The keymatrix has six rows and four columns. The voice key on the main PWB and the navigation key are
The device has one LED Driver (SMPS) that is used to drive both display and keyboard LEDs.
The LED driver consists of two LED chains: display LED chain and keyboard LED chain. Both chains contain four
LEDs, eight in total.
The current adjustment of the driver is done from the display LED branch. The keyboard current also depends
on the display brightness.
Typically, keyboard LEDs are turned ON only in dark ambient lighting conditions.
Ambient Light Sensor (ALS) is located in the upper part of the phone. It consists of the following components:
• lightguide (part of the front cover)
• phototransistor (V4400) + resistor (R4401)
• NTC + resistors (R4400, R4402, R4403)
• RETU EM ASIC (N2200)
Information on ambient lighting is used to control the backlights of the phone:
• Keypad lighting is switched on only when the environment is dark / dim
• Display backlights are dimmed, when the environment is dark / dim
The ambient light sensor itself is a photo transistor, which is temperature-compensated by an external NTC
resistor. Retu reads the light sensor (LS) and temperature (LST) results.
ALS calibration is not possible in the service points. ALS is serviced by replacing faulty phototransistors.
RAP3G ASIC is a 3G Radio Application Processor. RAM memory is integrated into RAP3G.
In general RAP3G consists of three separate parts:
• Processor subsystem (PSS) that includes the main processor and related functions
• MCU peripherals that are mainly controlled by MCU
• DSP peripherals that are mainly controlled by DSP
RAP3G core voltage (1.4V) is generated from Tahvo VCORE and I/O voltage (1.8V) is from Retu VIO. The core
voltage in sleep mode is lowered to 1.05V.
Retu EM ASIC
Retu EM ASIC includes the following functional blocks:
• Start up logic and reset control
• Charger detection
• Battery voltage monitoring
• 32.768kHz clock with external crystal
• Real time clock with external backup battery
• SIM card interface
• Stereo audio codecs and amplifiers
• A/D converter
• Regulators
• Vibra interface
• Digital interface (CBUS)
Tahvo EM ASIC
Tahvo EM ASIC includes the. following functional blocks:
• Core supply generation
• Charge control circuitry
• Level shifter and regulator for USB/FBUS
• Current gauge for battery current measuring
• External LED driver control interface
• Digital interface (CBUS)
Device memories
RAP3G memories NOR flash and SDRAM
Modem memory consists of 64 Mbit SDRAM and 64 Mbit NOR flash memories.
SDRAM is a dynamic memory for ISA (Intelligent Software Architecture) SW.
NOR is used for ISA SW code and PM data and CDSP (Cellular Digital Signal Processor) SW code.
16-bit wide SDRAM interface consists of a DDR SDRAM controller from ARM, DCDL/DLLs and wrapper logic. 32-bit
wide flash interface is implemented by using an EMC module.
SDRAM core voltage (1.8V) is generated from Retu VDRAM and I/O voltage (1.8V) is from VIO. NOR flash uses VIO
The application memory of the device consists of NAND/DDR combo memory. The stacked DDR/NAND application
memory has 512 Mbits of DDR memory and 512 Mbits of flash memory. DDR DRAM memory is stacked above
the NAND flash.
OMAP includes a 16-bit dedicated memory interface called External Memory Interface Fast (EMIFF). This is used
to support an interface for the DDR memory. Helen3 (OMAP1710) provides also a NAND flash controller located
in the shared peripheral bus, providing support for 8-bit NAND flash. The interface requires an 8-bit address bus
multiplexed with 8-bit data bus and several control signals.
The core voltage for DDR is 1.8V, which is generated by a discrete LDO (LP3999-1.8). 1.8V (VIO) is for DDR I/O
voltage. Both NAND core and I/O voltages are 1.8V generated by VIO.
Audio concept
Audio HW architecture
The functional core of the audio hardware is built around two ASICs: RAP 3G CMT engine ASIC and the mixedsignal ASIC Retu.
Retu provides an interface for the transducers and the accessory connector. Because audio amplifiers are also
integrated into Retu, the only discrete electronics components needed for audio paths are audio filtering
components and EMC/ESD components.
There are three audio transducers:
• 8mm dynamic earpiece
• 16mm dynamic speaker
• electret microphone module
In addition to the audio transducers, Retu also provides an output for the dynamic vibra component.
All galvanic audio accessories are connected to the Pop-Port™ accessory connector.
A Bluetooth audio module that is connected to RAP3G supports Bluetooth audio functionality.
There is a separate application ASIC, OMAP 1710, for Symbian applications.
Internal microphone is used for HandPortable (HP) and Internal HandsFree (IHF) call modes.
An analogue electret microphone is connected to Retu ASIC’s Mic1P and Mic1N inputs via asymmetric electrical
connection.
The microphone is biased by Retu ASIC MicB1 bias voltage output.
Figure 21 Internal microphone circuitry
External microphone
Galvanic accessories are connected to the system connector (Pop-PortTM).
Accessory audio mode is automatically enabled/disabled during connection/disconnection of dedicated phone
accessories.
External microphone circuitry is biased by Retu ASIC MicB2 bias voltage output. The circuitry provides a
symmetrical connection for the microphone from the Pop-PortTMconnections, XMICN and XMICP, to Retu ASIC
inputs, Mic2P and Mic2N.
Figure 22 External microphone circuitry (Pop-Port connects to the right side)
Internal earpiece
The internal earpiece is used in the HandPortable (HP) call mode. A dynamic 8 mm earpiece capsule is connected
to Retu ASIC’s differential outputs EarP and EarN.
Figure 23 Internal earpiece circuitry
Internal speaker
The internal speaker is used in Internal HandsFree (IHF) call mode.
A dynamic 16 mm speaker is connected to Retu ASIC’s outputs HFSpP and HFSpN.
The IHF amplifier integrated in Retu is a Digital Pulse Modulated Amplifier (DPMA).
All galvanic accessories are connected to the system connector (Pop-Port™).
The accessory audio mode is automatically enabled/disabled during connection/disconnection of dedicated
phone accessories.
Retu ASIC provides two output channels in either single-ended or differential format. Retu ASIC outputs XearL
and XearLC form the left channel audio output, and XearR and XearRC the right channel audio output. XearLC
and XearRC are the ground pins if the output works in a single-ended operation.
In the Pop-Port™ side, HSEAR P and HSEAR N form the left channel output, and HSEAR R P and HSEAR R N the
right channel output. Respectively, HSEAR N and HSEAR R N are the ground pins if the output works in a singleended operation.
Figure 25 External earpiece circuitry (Pop-Port connected on the right)
Vibra circuitry
Vibra is used for vibra-alarm function.
The vibra motor is connected to the Retu ASIC VibraP and VibraN Pulse Width Modulated (PWM) outputs.
Pop-PortTM connector provides a fully differential 4–wire stereo line-level output connection and fully
differential 2-wire mono line-level or microphone level input connection.
The handsfree driver in Retu is meant for the headset.
The output is driven in a fully differential mode. In the fully differential mode, the handsfree pin is the negative
output and the HFCM pin is the positive output. The gain of the handsfree driver in the differential mode is 6 dB.
The earpiece and headset signals are multiplexed so that the outputs cannot be used simultaneously.
Receiver functions are implemented in RF ASIC N7500.
The receiver is a linear direct conversion receiver consisting of separate front ends (LNA and demodulator) for
each supported system.
After the demodulators, the signal paths are combined to one common BB path.
WCDMA receiver
In the WCDMA mode, the received signal is fed from the antenna to the duplex filter. After the duplex filter the
signal goes via balun to the integrated LNA (Low Noise Amplifier) residing in N7500. After the LNA, the signal
goes trough an off chip band pass SAW filter. The main task of the filter is to attenuate the Tx signal which
amplified by LNA and is leaking trough the duplex filter.
After filtering, the signal goes to the down conversion mixer, which converts the signal to baseband I and Q
signals (90 degrees phase shift). After the demodulator output, there is an RC low pass filter with f0 of ca. 1.5
MHz. It is a part of the BB selectivity filtering.
At BB frequency the signal is amplified and fed to a low pass filter giving the selectivity of the receiver. The
filters need RC constants, which suffer of process variations. Therefore the integrated resistors are adjustable
by a digital control word.
The Rx channel filter must be calibrated with an automatic routine whenever N7500 IC is changed to a phone.
In the WCDMA mode, the corner frequency of the filter is set to ca. 2.1MHz. The filter is followed by an AGC
(Automatic Gain Control) amplifier with an adjustable gain. The signal is further amplified before it is fed to
balanced analogue IQ output pins. The analogue output pins are accompanied by reference voltage output,
which sets the DC level for the AD converter in BB ASIC RAP3G.
The gain of the Rx chain can be adjusted in multiple phases. The first adjustable gain is in LNA which has low,
mid and high gain settings and isolation mode. After the mixer, there are adjustable gains (AGC) inside the
N7500 IC.
The last stage of the RF Rx chain is an output buffer which feeds the signal and a reference voltage (VREFCM) to
the BB ASIC. The AGC stages are used to maintain the voltage swing at the input of the AD converters at an
adequate level.
The gain of the Rx chain is measured in production at one RF frequency and power level, so that RSSI (Receiving
Signal Strength Indicator) reporting gets calibrated. If N7500 IC is changed, this calibration needs to be
performed.
GSM receiver
As GSM900, GSM1800 and GSM1900 Rx branches are functionally identical, the following description is applicable
to all of them.
The received signal goes from the GSM antenna to the antenna switch module. The antenna switch module
contains PIN diode switches for a band and Rx/Tx selection and also Rx SAW filters.
The antenna switch module is followed by integrated LNAs residing in N7500.
The LNAs are followed by demodulators which downconvert the signal to baseband I and Q signals.
After the down conversion mixer, the Rx chain is similar to the WCDMA Rx. The channel select filter is set to 115
kHz in the GSM mode.
In the GSM mode, the DC compensation is carried out before the reception slot.
During a DC1 operation, a sample of the DC level of the signal is stored in sufficiently large off chip capacitors.
During reception, information is in turn used for subtracting the DC information from the input signal of the
AGC (Automatic Gain Control) amplifier.
A DCN0 operation is carried out to discharge any charge from the capacitors before DCN1. This guarantees that
the starting point for the DC compensation is always the same.
Transmitter
Introduction to transmitter functionality
Transmitter functions are implemented in the RF ASIC N7501. It contains a BB frequency low pass filter, which
is tunable according to the signal bandwidth of the system in use.
In addition, N7501 contains separate RF paths comprising a final frequency IQ modulator and VGA amplifiers.
In order to eliminate the effect of process variations on the low pass filter characteristics, a tuning procedure
is carried out in production. The same tunings must be performed if the RF ASIC N7501 is changed.
WCDMA transmitter
In the transmitter side, an analogue I/Q modulated signal is received from the digital baseband into N7501 and
fed through the low pass filter. The corner frequency of the filter is set to approximately 3 MHz.
After the filter the signal is fed to the IQ modulator, which converts the signal to final Tx frequency. There are
two separate I/Q modulators:.one for WCDMA and another for EGSM900 and GSM1800/1900 signals.
The modulator is followed by two VGA stages giving 85 dB of gain control range. The signal then exits N7501
via a balanced line. In order to attenuate the out of band noise of the transmitter, the signal is band pass filtered
by a SAW filter before it is fed to the WCDMA PA module.
After the PA the transmitted WCDMA signal is fed through an isolator and a duplex filter to the antenna.
Figure 32 WCDMA transmitter
WCDMA power control
WCDMA Tx power control is accomplished by the two VGA amplifier stages in N7501 Tx ASIC.
The VGAs have a common temperature compensation circuit and one voltage mode analogue input for gain
control (TXC).
The gain of the VGA amplifier chain is controlled by a DA converter in BB. The same DA converter is shared by
GSM Tx power control function.
It is required that phone can measure its output power in high power levels. A sample of the output power is
taken by a capacitor between the power amplifier and the isolator, and fed to a diode power detector. The
output of the detector is low pass filtered, and the voltage is then AD converted in BB. The power detector
circuitry is calibrated in production.
Another function of the detector voltage is to steer the DC/DC converter, which is providing a variable supply
voltage for the WCDMA PA.
WCDMA PA module
The WCDMA PA is housed in a separate module having:
• a variable supply voltage input for the amplifier stages (Vcc11),
• a battery supply voltage for the bias circuits (Vcc12),
• and two bias current inputs.
Bias currents are generated by 5-bit DA converters in N7501 RF ASIC. The converters are controlled by BB via
RFBus.
In production the PA quiescent current is set according to PA vendor’s specifications. If another PA is changed
The bias currents are also used as PA on/off controls. The structure of the WCDMA PA is shown in the following
figure. The supply voltage for the output stage is got from a DCDC converter in order to improve the efficiency
at low power levels.
PA DCDC converter
The control of the DCDC converter is fed back from the power detector circuit.
The DCDC converter limits the lowest supply voltage to 1.5 V. At highest power levels the DCDC converter output
settles nominally to 3.2 V.
Figure 33 Block diagram of DCDC converter and WCDMA PA
GSM transmitter
N7501 receives an analogue IQ modulated signal N7501 from digital BB, which is first low pass filtered with
filter corner frequency set to approximately 200 kHz. After the filter, the signal is routed to the GSM modulator.
The appropriate routing after the modulator is selected by biasing either EGSM900 (/GSM850) or GSM1800/1900
variable gain amplifier. The amplifier gives 40 dB of power control dynamic range.
After the VGA stage the signal exits N7501. In case of GSM1800/1900 the signal goes directly to the GSM PA
module. In case of EGSM900 (and GSM850), the PA module is preceded by a SAW filter. After the filter, the signal
is fed to GSM PA module. Finally the signal is routed via the antenna switch to the antenna.
A closed control loop comprise an integrated power detector (in PA module) and an error amplifier. The error
amplifier resides in N7501, and it controls the transmitter power of GSM.
Detector output from the PA gives a DC level proportional to the output power. The DC voltage is fed to the
negative input of the error amplifier, where it is compared to the level of the reference signal, TXC. TXC is got
from the BB circuitry. The output of the error amplifier is fed to a buffer amplifier, which in turn steers the VGA
amplifier.
The TXC signal also contains an output power ramp waveform, which is optimized in order to meet the transient
spectrum and burst timing requirements. PA is switched on and off by changing the bias currents. As a result
the output power ramping and final power level of the transmitter are set in a controlled manner.
During EDGE operation 8-PSK modulation is utilized. In the 8-PSK modulation, there are envelope variations
during the data transmission. Therefore the PA is set to a dedicated EDGE mode by setting a specific mode
control signal up (Vmode). The bias currents are also adjusted in order to improve the linearity.
Because of the 8-PSK modulation, the power control loop has to be opened during the data transmission in
EDGE mode. The Loop is opened with a dedicated TXA-signal via RFBus. When the power is ramped up, a
modulating bit sequence producing a constant envelope waveform is used, and the power control loop is closed.
Once the desired power level has been reached, the loop is opened and the power control voltage is kept
constant by a capacitor integrated to N7501 Tx ASIC. When the active part of the burst is over, the loop is again
closed and the power is ramped down. The TXA signal is disabled during GMSK transmission.
The power control loop is enabled and disabled by writing an appropriate register in N7501 RF ASIC. In case of
dual slot transmission, the output power is ramped down between the consecutive slots.
A single GSM/EDGE PA module contains two separate amplifier chains, one for EGSM900 (and GSM850) and
another for GSM1800/1900. Both amplifiers have a battery supply connection and two bias current inputs. The
bias current for final amplifier stage is adjusted according the power level in use in order to optimise efficiency.
The bias currents are also used as on/off switching signals for PAs.
In the EDGE mode, PA linearity has to be higher than in the GMSK mode because of envelope variations of the
8-PSK modulations. This is achieved by increasing the bias currents compared to the GMSK mode and setting a
dedicated Vmode control signal up. Increasing bias currents improves the linearity of the amplifiers, but it also
tends to unnecessarily increase the gain of the PA. Vmode control aims to keep the gain of the amplifiers down.
The bias current needed for the maximum and the lowest output powers is specified by a PA manufacturer.
The current for the intermediate power levels is then linearly adjusted between these two values.
Frequency synthesizers
RF has separate synthesizers for Rx and Tx. Both synthesizers consist of:
• PLL (Phase-Locked Loop)
• loop filter
• VCO (Voltage Controlled Oscillator)
• balun
The VCO frequencies are locked by PLLs into a reference oscillator, VCTCXO (Voltage Controlled Temperature
Compensated Crystal Oscillator).
The PLLs are located in N7500 and N7501 respectively and controlled via RFBus. PLL charge pump charges or
discharges the integrator capacitor in the loop filter depending on the phase of the measured frequency
compared to the phase of the reference frequency. The integrator output voltage is connected to the control
input of the VCO.
The VCOs operate at the channel frequency multiplied by two in the upper bands (for example, GSM1800/1900/
WCDMA) and by four in EGSM900 (and GSM850, if applicable). The required frequency dividers required for
modulators are integrated in N7501 and those for demodulators in N7500. The dividers are controlled via RFBus.
Figure 37 Phase locked loop in N7500 and N7501 (PLL)
Reference oscillators
A 38.4MHz VCTCXO is used as a reference oscillator for the frequency synthesizers.
The output signal of the VCTCXO is directly connected to both N7500 and N7501 where it is used as synthesizer
reference. N7500 also contains a balanced buffered output for supplying the clock signal to the digital BB ASIC
and a single ended buffer for Bluetooth.
The frequency of the reference oscillator is locked into the frequency of the base station with the help of an AFC
(Automatic Frequency Control) voltage, which is generated in BB by DSP (Digital Signal Processor) and converted
by a dedicated DAC (Digital-to-Analogue-Converter).
Regulators
N7500 and N7501 contain integrated regulators to supply regulated voltages for their internal circuitry and
other RF parts. Rx VCO supply is got via a switch from N7500 VR1 regulator. VCO can be switched on and off by
controlling the switch via RFBus.
Supply voltage for the VCTCXO is provided by a BB mixed mode ASIC. The same supply is used for reference clock
input buffers (in N7500 and N7501), output buffers (from N7500 to BB) and for the digital control blocks of both
RF ASICs. When the VCTCXO regulator is set active, the control blocks of the RF ASICs also wake up. After that the
integrated regulators can be controlled via RFBus.
Other supplies, like 4.7V supply for PLL charge pumps and bias reference (VREFRF01) are also provided by the
BB mixed mode ASIC.
Figure 38 RF supply connections from the BB mixed mode ASIC