Nokia 8310 Service manual

Programs After Market Services (PAMS)

Technical Documentation





NMP Part No.0275518

NHM–7

SERIES CELLULAR

PHONES

NHM–7 issue 1: 10/2001

Copyright 2001. Nokia Corporation. All Rights Reserved.

NHM–7

Foreword

PAMS Technical Documentation

AMENDMENT RECORD SHEET

Amendment Date Inserted By Comments

10/2001 J. Rantala Issue 1

Page 2

 Nokia Corporation.

Issue 1 10/2001

PAMS Technical Documentation

SERIES CELLULAR PHONES

SERVICE MANUAL

CONTENTS:

1. Foreword

2. General Information

3. System & UI Module LA5/LK5

4. Part lists

5. Product Variants NHM–7

NHM–7

Foreword

NHM–7

6. Service Software & Concepts

7. Service Tools

8. Disassembly Instructions

9. Troubleshooting Instructions

10. Non–serviceable Accessories

11. Schematic Diagrams

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 Nokia Corporation.

Page 3

NHM–7

Foreword

This document is intended for use by qualified service personnel only.

Company Policy

Our policy is of continuous development; details of all technical modifications will
be included with service bulletins.

While every endeavour has been made to ensure the accuracy of this document,
some errors may exist. If any errors are found by the reader, NOKIA Corporation
should be notified in writing.

Please state:

Title of the Document + Issue Number/Date of publication
Latest Amendment Number (if applicable)
Page(s) and/or Figure(s) in error

PAMS Technical Documentation

IMPORTANT

Please send to: Nokia Corporation

NMP
PAMS Technical Documentation
PO Box 86
24101 SALO
Finland

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Issue 1 10/2001

PAMS Technical Documentation

Warnings and Cautions

Please refer to the phone’s user guide for instructions relating to operation,
care and maintenance including important safety information. Note also the
following:

Warnings:

1. CARE MUST BE TAKEN ON INSTALLATION IN VEHICLES
FITTED WITH ELECTRONIC ENGINE MANAGEMENT
SYSTEMS AND ANTI–SKID BRAKING SYSTEMS. UNDER
CERTAIN FAULT CONDITIONS, EMITTED RF ENERGY CAN
AFFECT THEIR OPERATION. IF NECESSARY, CONSULT THE
VEHICLE DEALER/MANUFACTURER TO DETERMINE THE
IMMUNITY OF VEHICLE ELECTRONIC SYSTEMS TO RF
ENERGY.

2. THE HANDPORTABLE TELEPHONE MUST NOT BE OPERATED
IN AREAS LIKELY TO CONTAIN POTENTIALLY EXPLOSIVE
ATMOSPHERES EG PETROL STATIONS (SERVICE STATIONS),
BLASTING AREAS ETC.

NHM–7

Foreword

3. OPERATION OF ANY RADIO TRANSMITTING EQUIPMENT,

Cautions:

1. Servicing and alignment must be undertaken by qualified

2. Ensure all work is carried out at an anti–static workstation and that

3. Ensure solder, wire, or foreign matter does not enter the telephone

4. Use only approved components as specified in the parts list.

5. Ensure all components, modules screws and insulators are

INCLUDING CELLULAR TELEPHONES, MAY INTERFERE WITH
THE FUNCTIONALITY OF INADEQUATELY PROTECTED
MEDICAL DEVICES. CONSULT A PHYSICIAN OR THE
MANUFACTURER OF THE MEDICAL DEVICE IF YOU HAVE
ANY QUESTIONS. OTHER ELECTRONIC EQUIPMENT MAY
ALSO BE SUBJECT TO INTERFERENCE.

personnel only.

an anti–static wrist strap is worn.

as damage may result.

correctly re–fitted after servicing and alignment. Ensure all cables
and wires are repositioned correctly.

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 Nokia Corporation.

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NHM–7

Foreword

PAMS Technical Documentation

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Issue 1 10/2001

PAMS Technical Documentation

NHM–7 Series Transceivers

General Information

Issue 1 10/2001  Nokia Corporation

NHM–7
General Information

PAMS Technical Documentation

CONTENTS

The Product 3. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Handportable 3. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Desktop Option 4. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Product and Module List 5. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

General Specifications of Transceiver NHM–7 6. . . . . . . . . . . . . .

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Issue 1 10/2001

PAMS Technical Documentation

The Product

The NHM–7 is a dual band handportable mobile telephone for the
E–GSM 900 and GSM1800 networks. It is both GSM900 phase 2 power
class 4 transceiver (2W) and GSM1800 power class 1 (1W) transceiver.

The main transceiver features are:
– Integrated FM radio – Full graphic display

– GPRS – Integrated IR link & internal data
– Internal vibra – Plug & play HF support
– Plug–in SIM card below the back cover of the phone
– Back mounted antenna (no connection for external antenna)
– Jack style UI with two soft keys

Handportable

NHM–7

General Information

2.

HDD–1

1.

NHM–7

4.

ACP–7C
ACP–7U

5.

ACP–7H

3.

ACP–7E

ACP–7X

6.

ACP–7A

Item Name: Type code: Material code:

1. Transceiver See Product Variants
Standard battery Li–ion BLB–2 0271570

2. Headset HDD–1 0273302

3. Standard Charger

(Euro plug) 207–253 Vac ACP–7E 0675144

4. Standard Charger (US plug) 108–132 Vac ACP–7U 0675143
Standard Charger (US plug) 198–242 Vac ACP–7C 0675158

5. Standard Charger (UK plug) 207–253 Vac ACP–7X 0675145
Standard Charger

6. Standard Charger

Issue 1 10/2001

(UK plug) 180–220 Vac ACP–7H 0675146
(Australia) 216–264 Vac ACP–7A 0675148

 Nokia Corporation

Page 3

NHM–7
General Information

Desktop Option

The desktop option allows the user to charge the phone from the mains.
Besides these optional chargers also ACP–7 can be used.

1.

NHM–7

ACP–8E

3.

ACP–8K

PAMS Technical Documentation

ACP–8X

4.

5.

ACP–8U
ACP–8C

DCD–1

2.

ACP–8A

6.

Item Name: Type code: Material code:

1. Transceiver See Product Variants

2. Desk Stand DCD–1 0272865

3. Travel Charger

Euro plug 90–264 Vac ACP–8E 0272169

Travel Charger Korea plug 90–264 Vac ACP–8K 027311 1

4. Travel Charger UK plug 90–264 Vac ACP–8X 0272172

5. Travel Charger

US plug 90–264 Vac ACP–8U 0675196

Travel Charger China plug 90–264 Vac ACP–8C 0675211

6. Travel Charger Australia plug 90–264 Vac ACP–8A 0271637

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Issue 1 10/2001

PAMS Technical Documentation

Product and Module List

Unit/type: Product code:
NHM–7 Transceiver See Product Vari-

BLB–2 Standard Battery Li–ion 0271570
ACP–7E Standard Charger (EUR) 207–253 Vac 0675144
ACP–7U Standard Charger (US) 108–132 Vac 0675143
ACP–7C Standard Charger (US) 198–242 Vac 0675158
ACP–7X Standard Charger (UK) 207–253 Vac 0675145
ACP–7H Standard Charger (UK) 180–220 Vac 0675146
ACP–7A Standard Charger (AUS) 216–264 Vac 0675148
ACP–8E Travel Charger (EUR) 90–264 Vac 0272169
ACP–8K Travel Charger (Korea) 90–264 Vac 0273111

NHM–7

General Information

ants

ACP–8X Travel Charger (UK) 90–264 Vac 0272172
ACP–8U Travel Charger (US) 90–264 Vac 0675196
ACP–8C Travel Charger (China) 90–264 Vac 0675211
ACP–8A Travel Charger (Australia) 90–264 Vac 0271637
LCH–9 Mobile Charger 0675120
PPH–1 Plug–in HF Car Kit 0272170
MBD–10 Mobile Holder 0272866 Eur/Afr

0273412 APAC

MKU–1 Mounting Plate 0620036
HHS–9 Swivel Mount 0620037
DCD–1 Desktop Stand 0272865
DDC–1 Battery Charging Stand 0272418
HFM–8 HF Microphone 0271503
HDD–1 Headset 0273302
HDC–5 Headset 0271467
HDE–2 Headset 0694075
LPS–3 Loopset 0272419

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Page 5

NHM–7
General Information

PAMS Technical Documentation

General Specifications of Transceiver NHM–7

Parameter Unit

Cellular system GSM900 and GSM1800
RX frequency band EGSM: 925 ... 935 MHz

GSM900 935 ... 960 MHz
GSM1800 1805 ... 1880 MHz

TX frequency band EGSM 880 ... 890 MHz

GSM900 890 ... 915 MHz
GSM1800 1710 ... 1785 MHz

Output power GSM900 * +5 ...+33 dBm / 3.2 mW ... 2 W

GSM1800 +0 ...+30 dBm / 1.0 mW ... 1 W
Duplex spacing GSM900 * 45 MHz GSM1800 95 MHz
Number of RF channels EGSM 50

GSM900 124

GSM1800 374
Channel spacing 200 kHz
Number of TX power levels GSM900 * 15 GSM1800 16
Sensitivity, static channel GSM900: –102 dBm

GSM1800: –102 dBm (norm. cond. only)
Frequency error, static channel < 0.1 ppm
RMS phase error < 5.0
Peak phase error < 20.0

*) applies also to EGSM

o

o

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Issue 1 10/2001

PAMS Technical Documentation

NHM–7 Series Transceivers

System Module & UI

Issue 1 10/2001  Nokia Corporation

NHM–7
System Module & UI

PAMS Technical Documentation

CONTENTS

Transceiver NHM–7 6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Introduction 6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Modules 6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operation Modes 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Interconnection Diagram 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

System Module 8. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Baseband Module 8. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Block Diagram 8. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Technical Summary 9. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DC Characteristics 10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Regulators and Supply Voltage Ranges 10. . . . . . . . . . . . .

External and Internal Signals and Connections 11. . . . . . . . .

Internal Signals and Connections 11. . . . . . . . . . . . . . . . . . . . .

FM Radio Interface 11. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Internal microphone 12. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Internal speaker 12. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

AC and DC Characteristics of RF–BB voltage supplies 13

AC and DC Characteristics of RF–BB digital signals 14. .

AC and DC Characteristics of RF–BB analogue signals 15

External Signals and Connections 16. . . . . . . . . . . . . . . . . . . .

UI (board–to–board) connector 16. . . . . . . . . . . . . . . . . . . .

LCD connector 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DC connector 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Headset connector 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

SIM connector 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Functional Description 20. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Modes of Operation 20. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Supply Voltage Regulation 21. . . . . . . . . . . . . . . . . . . . . . . . . .

Battery 22. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Up and Reset 22. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

A/D Channels 23. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

FM Radio 24. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

IR Module 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Backup Battery 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

SIM Interface 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Buzzer 26. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Internal Microphone 26. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

UPP 27. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Memory Block 27. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RF Module 29. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RF Frequency Plan 29. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DC characteristics 30. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Regulators 30. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Distribution Diagram 31. . . . . . . . . . . . . . . . . . . . . . . . . .

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NHM–7

PAMS Technical Documentation

RF characteristics 32. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Transmitter characteristics 32. . . . . . . . . . . . . . . . . . . . . . . .

Receiver characteristics 32. . . . . . . . . . . . . . . . . . . . . . . . . .

RF Block Diagram 33. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Frequency synthesizers 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Receiver 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Transmitter 36. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

AFC function 36. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DC–compensation 37. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

UI Board 38. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

LCD & Keypad Illumination 38. . . . . . . . . . . . . . . . . . . . . . . . . .

Internal Speaker 39. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Schematic Diagrams (at the back of the binder): LA5 layout 15 and LK5 layout 11
(covers layout version 10)

System Module & UI

RF & BB (Version 0.0 Edit 61) for layout version 15 A–1. . . . . . . .

RF (Version 1.0 Edit 167) for layout version 15 A–2. . . . . . . . . . . .

BB Connections (Version 0.0 Edit 96) for layout version 15 A–3. .
System Connector (Version 1.3 Edit 156) for layout version 15 A–4
Audio Interface (Version 1.3 Edit 15) for layout version 15 A–5. . .

UEM of BB (Version 2.0 Edit 164) for layout version 15 A–6. . . . . .

Light Filtering (Version 2.0 Edit 34) for layout version 15 A–7. . . .

Display and Keyboard Interface (Version 1.3 Edit 201) for layout version 15A–8
Infrared Module (Version 2.0 Edit 37) for layout version 15 A–9. .

FM Radio (Version 1.3 Edit 104) for layout version 15 A–10. . . . . .

SIM Reader (Version 4.0.1 Edit 49) for layout version 15 A–11. . . .

UPP and decoupling capacitors (Version 2.0 Edit 89) for layout version 15A–12

AMD (Version 2.0 Edit 31) for layout version 15 A–13. . . . . . . . . . . .

Layout Diagram of LA5 – Top (Version 15) A–14. . . . . . . . . . . . . . . . .

Layout Diagram of LA5 – Bottom (Version 15) A–14. . . . . . . . . . . . . .

Testpoints of LA5 – Top (Version 15) A–15. . . . . . . . . . . . . . . . . . . . . .

Testpoints of LA5 – Bottom (Version 15) A–15. . . . . . . . . . . . . . . . . . .

UI Board – LK5 for version 11 A–16. . . . . . . . . . . . . . . . . . . . . . . . . . . .

Layout Diagram – LK5 for version 11 A–17. . . . . . . . . . . . . . . . . . . . . .

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NHM–7
System Module & UI

Schematic Diagrams (at the back of the binder): LA5 layout 17 and LK5 layout 11
(covers layout version 10)

RF & BB (Version 0.0 Edit 65) for layout version 17 B–1. . . . . . . .

RF (Version 1.0 Edit 180) for layout version 17 B–2. . . . . . . . . . . .

BB Connections (Version 0.0 Edit 113) for layout version 17 B–3.
System Connector (Version 1.3 Edit 162) for layout version 17 B–4
Audio Interface (Version 1.3 Edit 80) for layout version 17 B–5. . .

UEM of BB (Version 2.0 Edit 168) for layout version 17 B–6. . . . . .

Light Filtering (Version 2.0 Edit 34) for layout version 17 B–7. . . .

Display and Keyboard Interface (Version 1.3 Edit 210) for layout version 17B–8
Infrared Module (Version 2.0 Edit 38) for layout version 17 B–9. .

PAMS Technical Documentation

FM Radio (Version 1.3 Edit 110) for layout version 17 B–10. . . . . . .

SIM Reader (Version 1.3 Edit 48) for layout version 17 B–11. . . . . .

UPP and decoupling capacitors (Version 2.0 Edit 91) for layout version 17B–12
GSM RF – BB Interface (Version 1.3 Edit 35) for layout version 17 B–13

Flash Memory (Version 2.0 Edit 32) for layout version 17 B–14. . . .

Layout Diagram of LA5 – Top (Version 17) B–15. . . . . . . . . . . . . . . . .

Layout Diagram of LA5 – Bottom (Version 17) B–15. . . . . . . . . . . . . .

Testpoints of LA5 – Top (Version xx) B–16. . . . . . . . . . . . . . . . . . . . . . .

Testpoints of LA5 – Bottom (Version 17) B–16. . . . . . . . . . . . . . . . . . .

UI Board – LK5 for version 11 B–17. . . . . . . . . . . . . . . . . . . . . . . . . . . .

Layout Diagram – LK5 for version 11 B–18. . . . . . . . . . . . . . . . . . . . . .

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PAMS Technical Documentation

NHM–7

System Module & UI

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NHM–7
System Module & UI

Transceiver NHM–7

Introduction

The NHM–7 is a dual band radio transceiver unit for the E–GSM900 and

GSM1800 networks. GSM power class is 4 and GSM1800 power class is

1. It is a true 3 V transceiver, with an internal antenna and vibra.

The NHM–7 phone includes integrated FM radio. Radio is used as a nor-

mal mono receiver. FM radio is highly integrated. Only few external com-

ponents are needed. Headset is used as an antenna for radio.

The transceiver has a full graphic display and the user interface is based

on a Jack style UI with two soft keys.

An internal antenna is used, there is no connection to an external anten-

na.

The transceiver has a low leakage tolerant earpiece and an omnidirec-

tional microphone, providing an excellent audio quality. The transceiver

supports a full rate, an enhanced full rate and a half rate speech decod-

ing.

PAMS Technical Documentation

An integrated IR link provides a connection between two NHM–7 trans-

ceivers or a transceiver and a PC (internal data), or a transceiver and a

printer.

The small SIM ( Subscriber Identity Module ) card is located under the

battery. SIM interface supports both 1.8V and 3V SIM cards.

Electrical Modules

The radio module consists of Radio Frequency (RF) and baseband (BB).

User Interface (UI) contains display, keyboard, IR link, vibra, HF/HS con-

nector and audio parts. UI is divided into radio PWB LA5 and UI PWB

LK5. FM radio is located on the main PWB.

The electrical part of the keyboard is located in separate UI PWB named

LK5. LK5 is connected to radio PWB through spring connectors.

The System blocks provide the MCU, DSP, external memory interface

and digital control functions in UPP ASIC (Universal Phone Processor).

Power supply circuitry, charging, audio processing and RF control hard-

ware are in UEM ASIC (Universal Energy Management).

The purpose of the RF block is to receive and demodulate the radio fre-

quency signal from the base station and to transmit a modulated RF sig-

nal to the base station.

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PAMS Technical Documentation

Operation Modes

The transceiver has six different operation modes:

– power off mode – idle mode

– active mode – charge mode

– local mode – test mode

In the power off mode circuits are powered down and only sleep clock is

running.

In the idle mode only the circuits needed for power up are supplied.

In the active mode all the circuits are supplied with power although some

parts might be in the idle state part of the time.

The charge mode is effective in parallel with all previous modes. The

charge mode itself consists of two different states, i.e. the fast charge and

the maintenance mode.

The local and test modes are used for alignment and testing.

NHM–7

System Module & UI

Interconnection Diagram

Keyboard
module

SIM Battery

Radio

Module

LA5

Antenna

Display

Charger

MIC

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IR Link

 Nokia Corporation

Earpiece

HF

+

FM antenna

Page 7

NHM–7
System Module & UI

System Module LA5

Baseband Module

The baseband architecture supports a power saving function called ”sleep

mode”. This sleep mode shuts off the VCTCXO, which is used as system

clock source for both RF and baseband. During the sleep mode the sys-

tem runs from a 32 kHz crystal. The phone is waken up by a timer run-

ning from this 32 kHz clock supply. The sleep time is determined by net-

work parameters. Sleep mode is entered when both the MCU and the

DSP are in standby mode and the normal VCTCXO clock is switched off.

NHM–7 supports both three and two wire type of Nokia chargers. Three

wire chargers are treated like two wire ones. There is not separate PWM

output for controlling charger but it is connected to GND inside the bottom

connector. Charging is controlled by UEM ASIC (Universal Energy Man-

agement) and EM SW running in the UPP (Universal Phone Processor).

PAMS Technical Documentation

BLB–2 Li–ion battery is used as main power source for the phone.

Block Diagram

TX/RX SIGNALS

PWR

IR

FM
radio

UI

Digital Control

UPP

FLASH MEMORY

RF SUPPLIES

UEM

BB SUPPLIES

RAM

PA SUPPL Y

32kHz
CLK

SLEEP CLOCK

SIM

VBAT

13MHz
CLK

SYSTEM CLOCK

BATTERY

Page 8

BASEBAND

EXT. AUDIO

HS–connector

Charger
connector

UPP ASIC (Universal Phone Processor) provides the MCU, DSP, external

memory interface and digital control functions. UEM ASIC (Universal En-

ergy Management) contains power supply circuitry, charging, audio proc-

essing and RF control hardware.

 Nokia Corporation

Issue 1 10/2001

PAMS Technical Documentation

Technical Summary

Baseband is running from power rails 2.8V analog voltage and 1.8V I/O

voltage. UPP core voltage Vcore can be lowered down to 1.0V, 1.3V and

1.5V. UEM includes 6 linear LDO (low drop–out) regulators for baseband

and 7 regulators for RF. It also includes 4 current sources for biasing pur-

poses and internal usage. UEM also includes SIM interface which has

supports both 1.8V and 3V SIM cards.

Note: 5V SIM cards are no longer supported by NHM–7 baseband.

A real time clock function is integrated into the UEM which utilizes the

same 32kHz clock supply as the sleep clock. A backup power supply is

provided for the RTC which keeps the real time clock running when the

main battery is removed. The backup power supply is a rechargeable sur-

face mounted capacitor. The backup time with the capacitor is 30 minutes

minimum.

The analog interface between the baseband and the RF section is han-

dled by a UEM ASIC. UEM provides A/D and D/A conversion of the in–

phase and quadrature receive and transmit signal paths and also A/D and

D/A conversions of received and transmitted audio signals to and from

the user interface. The UEM supplies the analog TXC and AFC signals to

RF section according to the UPP DSP digital control. Data transmission

between the UEM and the UPP is implemented using two serial busses,

DBUS for DSP and CBUS for MCU. RF ASIC, Hagar, is controlled

through UPP RFBUS serial interface. There is also separate signals for

PDM coded audio. Digital speech processing is handled by the DSP in-

side UPP ASIC. UEM is a dual voltage circuit, the digital parts are running

from the baseband supply 1.8V and the analog parts are running from the

analog supply 2.78V also VBAT is directly used by some blocks.

NHM–7

System Module & UI

The baseband supports both internal and external microphone inputs and

speaker outputs. UEM also includes third microphone input which is used

in NHM–7 for FM radio. Input and output signal source selection and gain

control is done by the UEM according to control messages from the UPP.

Keypad tones, DTMF, and other audio tones are generated and encoded

by the UPP and transmitted to the UEM for decoding. A buzzer and exter-

nal vibra alert control signals are generated by the UEM with separate

PWM outputs.

NHM–7 has two external serial control interfaces: FBUS and MBUS.

These busses can be accessed only through production test pattern.

EMC shielding for baseband is implemented using a metallized plastic

frame and UI PWB ground plane. On the other side the engine is shielded

with PWB grounding. Heat generated by the circuitry will be conducted

out via the PWB ground planes.

NHM–7 radio module is implemented to 8 layer PWB. UI module is divid-

ed between main PWB LA5 and separate UI PWB LK5.

Issue 1 10/2001

 Nokia Corporation

Page 9

NHM–7
System Module & UI

DC Characteristics

Regulators and Supply Voltage Ranges
Battery Voltage Range

Signal Min Nom Max Note

PAMS Technical Documentation

VBAT 3.1V 3.6V 4.2V (charging

high limit voltage)

BB Regulators

Signal Min Nom Max Note

VANA 2.70V 2.78V 2.86V I
VFLASH1 2.70V 2.78V 2.86V I

VFLASH2 2.70V 2.78V 2.86V I
VSIM 1.745V

2.91V

1.8V

3.0V

1.855V

3.09V

VIO 1.72V 1.8V 1.88V I

VCORE 1.0V

1.235V

1.425V

1.710V

1.053V

1.3V

1.5V

1.8V

1.106V

1.365V

1.575V

1.890V

RF Regulators

3.1V SW cut off

= 80mA

max

= 70mA

max

I

= 1.5mA

Sleep

= 40mA

max

I

= 25mA

max

I

= 0.5mA

Sleep

= 150mA

max

I

= 0.5mA

Sleep

I

= 200mA

max

I

= 0.2mA

Sleep

Default value =

1.5V

Signal Min Nom Max Note

VR1A 4.6V 4.75V 4.9V I
VR2 2.70V

3.20V

2.78V

3.3V

2.86V

3.40V
VR3 2.70V 2.78V 2.86V I
VR4 2.70V 2.78V 2.86V I

VR5 2.70V 2.78V 2.86V I

VR6 2.70V 2.78V 2.86V I

VR7 2.70V 2.78V 2.86V I

max

I

max

max
max

I

Sleep
max

I

Sleep
max

I

Sleep
max

= 10mA
= 100mA

= 20mA
= 50mA

= 0.1mA

= 50mA

= 0.1mA

= 50mA

= 0.1mA

= 45mA

Page 10

 Nokia Corporation

Issue 1 10/2001

PAMS Technical Documentation

External and Internal Signals and Connections

This section describes the external and internal electrical connection and
interface levels on the baseband. The electrical interface specifications
are collected into tables that covers a connector or a defined interface.

Internal Signals and Connections

FM Radio Interface

NHM–7

System Module & UI

BB Signal FM Radio

Signal

VFLASH2

GenIO(3) FMClk

GenIO(8) FMWrEn

Vcc1 2.7V 2.78V 2.86V max. Icc1

Vcc2 2.7V 2.78V 2.86V max. Icc2

VDD 2.7V 2.78V 2.86V max. IDD

Min Nom Max Condition Note

19mA

800uA

3mA

1.4V
0

30ppm Stability

1.4V
0V

20µs t

1.8V 1.88V

0.4V

76471 Hz Frequency In GSM

2 µs t

1.8V 1.88V

0.4V

High
Low

rise

High
Low

wd

Reference
clock for FM
radio module

rise / fall time

FMWrEn

before rising
edge of

FMCtrlClk

(write opera­tion)

high

GenIO(11) FMCtrlClk

Issue 1 10/2001

1.4V
0

50 ms t

1.8V 1.88V

0.4V
1 µs tr / t

 Nokia Corporation

High
Low

start

max. 300kHz

f

rise / fall time

FMCtrlClk

delay after
switching on
the VFLASH2
(oscillator run­ning)

Page 11

NHM–7

out ut

System Module & UI

PAMS Technical Documentation

BB Signal

Signal

GenIO(12) FMCtrlDa

1.4V
0

10 µs t

1.5 µs t

GenIO(27) FMTuneX 1.4V

0

1.8V 1.88V

0.4V
14us t

1.8V 1.88V

0.4V

High
Low

da

shift

hold

High
Low

NoteConditionMaxNomMinFM Radio

Bidirectional

shift register
available after
”search
ready”

data available
after

FMCtrlClk

ris­ing edge (read
operation)

FMCtrlDa

sta-

bile after

FMCtrlClk

ris­ing edge
(write opera­tion)

from FM mod­ule to UPP
(FMCtrlClk =
’1’)

MIC3P FMAudio

228mV

pp

326mV

pp

460mV

pp

50dB S/N

2% Harmonic

Internal microphone

Signal Min Nom Max Condition Note

MICP

200mV

pp

2.0 V 2.1 V 2.25 V DC

MICN 2.0V 2.1V 2.25V DC

Internal speaker

Signal Min Nom Max Condition Note

EARP

0.75V 0.8V

EARN

0.75V 0.8V

2.0 V

0.85V

2.0 V

0.85V

pp

pp

distortion

AC

AC
DC

AC
DC

2.2kΩ to
MIC1B

Differential

p

(V

= 4.0

diff

Vpp)

Page 12

 Nokia Corporation

Issue 1 10/2001

PAMS Technical Documentation

DCT4 regulators is

f

f

CO

Current

2 10

mA

tuning

Su

Su ly for TX

VLO

buffers, rescaler

AC and DC Characteristics of RF–BB voltage supplies

NHM–7

System Module & UI

Signal

name

VBAT Battery PA & UEM

VR1A UEM VCP

VR2 UEM VRF_TX

VR3 UEM VCTCXO

From To Parameter Min Typ Max Unit Function

Voltage 2.95 3.6 4.2 V

Current 2000 mA

Current drawn by
PA when ”off”

Voltage 4.6 4.75 4.9 V

Noise density 240 nVrms/

Voltage 2.70 2.78 2.86 V
Current 65 100 mA
Noise density

f=100Hz
f>300Hz

Voltage 2.70 2.78 2.86 V

0.8 2 uA

sqrt(Hz)

120 nVrms/

sqrt(Hz)

Battery supply .
Cut–off level of

3.04V. Losses in
pcb tracks and

errites are taken
account to minimum
battery voltage
level.

Supply for varactor

or UHF V

.

nin

.

Supply for part of
transmit strip.

pply for TX

I/Q–modulators.

Supply for VCTCXO

VR4 UEM VRF_RX

VR5 UEM VDIG,

VPRE,
VL

VR6 UEM VBB

Current 1 20 mA
Noise density 240 nVrms/

sqrt(Hz)

Voltage 2.70 2.78 2.86 V

Current 50 mA

Noise density
f = 6 Hz

f = 60 Hz
f  600Hz

Voltage 2.70 2.78 2.86 V
Current 50 mA
Noise density

BW=100Hz...
100kHZ

Voltage 2.70 2.78 2.86 V
Current 50 mA
Noise density

BW=100Hz...
100kHz

5500

240 nVrms/

240 nVrms/

550

55

nVrms/
sqrt(Hz)

sqrt(Hz)

sqrt(Hz)

Supply for Hagar

RX; preamp., mixer,

DTOS
Noise density

decades 20dB/dec
from 6Hz to 600Hz.
From f >600Hz
maximum noise
density

RMS

/√Hz.

l

r

,

55nV
Supply for Hagar

PLL; dividers, LO–

ffr pr

Supply for Hagar
BB and LNA

Issue 1 10/2001

 Nokia Corporation

Page 13

NHM–7

CO

for RF–IC

density is

some digita

some digital arts of

Signal name

FromToParameter

Fun

ter
DC

ng?

System Module & UI

name

VR7 UEM UHF VCO

PAMS Technical Documentation

Voltage 2.70 2.78 2.86 V
Current 30 mA

FunctionUnitMaxTypMinParameterToFromSignal

Supply for UHF
V

VrefRF01 UEM VREF_RX

VrefRF02 UEM VB_EXT

Noise density
100Hz<f<2kHz
2kHz<f<10kHz
10kHz<f<30kHz
30kHz<f<90kHz
90kHz<f<3MHz

Voltage 1.334 1.35 1.366 V
Current 100 uA
Temp Coef –65 +65 uV/C

Noise density
BW=600Hz...

100kHz Note
Voltage 1.323 1.35 1.377 V

Current 100 uA
Temp Coef –65 +65 uV/C

Noise density
BW=100Hz...
100kHz

70

nVrms/

55

sqrt(Hz)
35
30
30

60 nVrms/

sqrt(Hz)

350 nVrms/

sqrt(Hz)

Voltage Reference

.

Note: Below
600Hz noise

allowed to
increase 20
dB/oct

Supply for RF–BB
digital interface and

l parts of

RF.

AC and DC Characteristics of RF–BB digital signals

Min Typ Max Unit

TXP
(RFGenOut3)

UPP PA &

RF–IC

”1” 1.38 1.88 V

”0” 0 0.4 V

Load Resistance 10 220 kohm

Load Capacitance 20 pF

Timing Accuracy 1/4 symbol

Input Characteristics

c-

tion

Tran
smit
ter
pow
er
amp
lifier
ena
ble /

N2
timi

??

Page 14

 Nokia Corporation

Issue 1 10/2001

PAMS Technical Documentation

ena

ena

data

data

d

cloc

cloc
(G

)

ag

Hag
circuits, AC

circuits, AC

NHM–7

System Module & UI

RFBusEna1X UPP RF–IC

RFBusData UPP RF–IC

RFBusClk UPP RF–IC

ParameterToFromSignal name

UnitMaxTypMin

”1” 1.38 1.88 V
”0” 0 0.4 V
Current 50 uA
Load resistance 10 220 kohm
Load capacitance 20 pF
”1” 1.38 1.88 V
”0” 0 0.4 V
Load resistance 10 220 kohm
Load capacitance 20 pF
Data frequency 10 MHz
”1” 1.38 1.88 V
”0” 0 0.4 V
Load resistance 10 220 kohm
Load capacitance 20 pF
Data frequency 10 MHz

Fun

c-

tion

RFb
us

ble

RFb
us

;

rea

/writ
e

RFb
us

k

RESET

ENIO6

UPP RF–IC

”1” 1.38 1.85 V
”0” 0 0.4 V
Load capacitance 20 pF
Load resistance 10 220 kohm
Timing accuracy 1/4 symbol

Res
et to
H
ar

AC and DC Characteristics of RF–BB analogue signals

Signal name From To Parameter Min Typ Max Unit Function

VCTCXO VCTCXO UPP

VCTCXOGnd VCTXO UPP DC Level 0 V Ground for

Signal amplitude 0.2 0.8 2.0 Vpp
Input Impedance 10 kohm
Input Capacitance 10 pF
Harmonic Content –8 dBc
Clear signal

window (no glitch)
Duty Cycle 40 60 %

200 mVpp

High stability clock
signal for the logic

coupled. Distorted
sine wave eg.
sawtooth.

reference clock

RXI/RXQ RF–IC UEM

Issue 1 10/2001

Differential voltage
swing (static)

DC level 1.3 1.35 1.4 V
I/Q amplitude

missmatch
I/Q phase

missmatch

1.35 1.4 1.45 Vpp

–5 5 deg

 Nokia Corporation

RX baseband
signal.

0.2 dB

Page 15

NHM–7

Programmable

voltage

opa

oam G1

System Module & UI

PAMS Technical Documentation

FunctionUnitMaxTypMinParameterToFromSignal name

TXIP / TXIN UEM RF–IC

TXQP /
TXQN

AFC UEM VCTCXO

Aux_DAC
(TxC)

UEM RF–IC Same spec as for TXIP / TXIN Differential

UEM RF

Differential voltage
swing (static)

DC level 1.17 1.20 1.23 V
Source

Impedance

Voltage Min
Max

Resolution 11 bits
Load resistance

and capacitance
Step settling time 0.2 ms
Voltage Min

Max 2.4
Source

Impedance
Resolution 10 bits

2.23 2.48 Vpp

200 ohm

0.0

2.4

1

0.1

V

2.6

kohm

100

nF

0.1 V

200 ohm

Programmable
voltage swing.

common mode

.

Between
TXIP–TXIN

quadrature phase
TX baseband
signal for the RF
modulator

Automatic
frequency control
signal for
VCTCXO

Transmitter power
control

Noise density
BW=100Hz...
100kHz

Temp Coef –65 +65 uV/C

RFTemp RF UEM

Vbase RF UEM Voltage 2.7 V Detected voltage

Voltage at –20oC 1,57
Voltage at +25oC 1,7
Voltage at +60oC 1,79

800 nVrms/

sqrt(Hz)

V Temperature

NOTE; Assumed
power control

mp G=1

sensor of RF.

from PA power
level sensing unit

External Signals and Connections

UI (board–to–board) connector

Pin Signal Min Nom Max Condition Note

1 SLOWAD(2) 1.5V

0.1V

2 VBAT 3.0V 3.6V 4.2V Battery voltage

3 ROW(4) 0.7xVIO

0

2.7V

1.0V

1.8V

0.3xVIO

Flip closed
Flip open

High
Low

used for flip
identification

for leds
Keyboard ma-

trix row 4

Page 16

 Nokia Corporation

Issue 1 10/2001

PAMS Technical Documentation

NHM–7

System Module & UI

NoteConditionMaxNomMinSignalPin

4 ROW(3) 0.7xVIO

0

5 COL(2) 0.7xVIO

0

6 ROW(2) 0.7xVIO

0

7 COL(1) 0.7xVIO

0

8 ROW(0) 0.7xVIO

0

9 KLIGHT VBAT

10 ROW(1) 0.7xVIO

0

11 COL(3) 0.7xVIO

0

12 COL(4) 0.7xVIO

0
13 GND 0V
14 GND 0V
15 GND 0V

VIO

0.3xVIO
VIO

0.3xVIO
VIO

0.3xVIO
VIO

0.3xVIO
VIO

0.3xVIO

0.3xVBAT
VIO

0.3xVIO
VIO

0.3xVIO
VIO

0.3xVIO

High
Low

High
Low

High
Low

High
Low

High
Low

LED off
LED on

High
Low

High
Low

High
Low

Keyboard ma­trix row 3

Keyboard ma­trix column 2

Keyboard ma­trix row 2

Keyboard ma­trix column 1

Keyboard ma­trix row 0

two colour led
control

Keyboard ma­trix row 1

Keyboard ma­trix column 3

Keyboard ma­trix column 4

16 GND 0V

LCD connector

Pin Signal Min Nom Max Condition Note

1 XRES

2 XCS

3 GND 0V
4 SDA

0.8*VIO
0
100ns t

0.8*VIO
0
130ns t

130ns t

300ns t

0.8*VIO
0

0.7*VIO
0
100ns t

100ns t

VIO

0.22*VIO

VIO

0.22*VIO

VIO

0.22*VIO
VIO

0.3*VIO

Logic ’1’
Logic ’0’

rw

Logic ’1’
Logic ’0’

css

csh

csw

Logic ’1’
Logic ’0’
Logic ’1’
Logic ’0’

sds
sdh

Reset
Active low

Reset active
Chip select

Active low
XCS low before

SCLK rising
edge

XCS low after
SCLK rising
edge

XCS high pulse
width

Serial data
(driver input)

Serial data
(driver output)

Data setup time
Data hold time

Issue 1 10/2001

 Nokia Corporation

Page 17

NHM–7
System Module & UI

5 SCLK

6 VDDI (VIO) 1.72V 1.8V 1.88V Logic voltage

7 VDD

(VFLASH1)

8 VOUT 9V Booster output,

0.8*VIO
0

VIO

0.22*VIO

4.0MHz
250ns t
1 10ns t
1 10ns t

2.72V 2.78V 2.86V Voltage supply

PAMS Technical Documentation

NoteConditionMaxNomMinSignalPin

Logic ’1’
Logic ’0’
Max frequency

scyc
shw
slw

Serial clock in­put

Clock cycle
Clock high
Clock low

supply
Connected to

VIO

Connected to
VFLASH1

C=1uF con­nected to GND

DC connector

Pin Signal Min Nom Max Condition Note

2 VCHAR 7.0 V

RMS

8.4 V

RMS

9.2 V

RMS

850 mA

Fast char­ger

Charger posi­tive input

1 CHGND 0 Charger ground

Headset connector

Pin Signal Min Nom Max Condition Note

5 XMICP

3 XMICN

4 XEARN

7 XEARP

1V

pp

100 mV

2.0 V 2.1 V 2.25 V DC
1V

pp

100 mV

0.75V 0.8V 0.85V DC
1V

pp

0.75V 0.8V 0.85V DC

pp

pp

G = 0dB
G = 20dB

G = 0 dB
G = 20dB

AC

1kΩ to MIC2B

1kΩ to GND

1V

pp

5 HookInt 0V 2.86V

(VFLASH1)

6 HeadInt 0V 2.86V

(VANA)

Page 18

 Nokia Corporation

AC

Connected to
UEM AD–con­verter

Accessory
detection

Issue 1 10/2001

PAMS Technical Documentation

System Module & UI

SIM connector

Pin Name Parameter Min Typ Max Unit Notes

NHM–7

1 VSIM

2 SIMRST

3 SIMCLK

4 DATA

1.8V SIM Card 1.6 1.8 1.9
3V SIM Card 2.8 3.0 3.2

1.8V SIM Card 0.9xVSIM
0

3V SIM Card 0.9xVSIM

0

Frequency 3.25 MHz
Trise/Tfall 50 ns

1.8V Voh

1.8V Vol

3 Voh
3 Vol

1.8V Voh

1.8V Vol

3 Voh
3 Vol

1.8V Vih

1.8V Vil

3V Vil
3V Vil

0.9xVSIM
0

0.9xVSIM
0

0.9xVSIM
0

0.9xVSIM
0

0.7xVSIM
0

0.7xVSIM
0

VSIM

0.15xVSIM
VSIM

0.15xVSIM

VSIM

VSIM

VSIM

0.15xVSIM
VSIM

0.15xVSIM
VSIM

0.15xVSIM
VSIM

0.15xVSIM

V Supply voltage

V SIM reset (output)

V

V SIM data (output)

SIM clock

SIM data (input)

Trise/Tfall max 1us

5 NC
6 GND GND 0 V Ground

Issue 1 10/2001

 Nokia Corporation

Page 19

NHM–7
System Module & UI

Functional Description

Modes of Operation

LA5 baseband engine has six different operating modes:
– No supply

– Backup
– Acting Dead
– Active
– Sleep
– Charging

No supply

In NO_SUPPLY mode the phone has no supply voltage. This mode is due
to disconnection of main battery and backup battery or low battery voltage
level in both of the batteries.

Phone is exiting from NO_SUPPLY mode when sufficient battery voltage
level is detected. Battery voltage can rise either by connecting a new bat­tery with VBAT > V
tery above V

Backup

MSTR+

MSTR+

.

PAMS Technical Documentation

or by connecting charger and charging the bat-

In BACKUP mode the backup battery has sufficient charge but the main
battery can be disconnected or empty (VBAT < V
VBU

VRTC regulator is disabled in BACKUP mode. VRTC output is supplied
without regulation from backup battery (VBACK). All the other regulators
are disabled.

Acting Dead

If the phone is off when the charger is connected, the phone is powered
on but enters a state called ”Acting Dead”. To the user the phone acts as
if it was switched off. A battery charging alert is given and/or a battery
charging indication on the display is shown to acknowledge the user that
the battery is being charged.

Active

In the active mode the phone is in normal operation, scanning for chan­nels, listening to a base station, transmitting and processing information.
There are several sub–states in the active mode depending on if the
phone is in burst reception, burst transmission, if DSP is working etc.

One of the sub–state of the active mode is FM radio on state. In that case
UEM audio blocks and FM radio are powered on. FM radio circuitry is
controlled by the MCU and 75kHz reference clock is generated in the
UPP. VFLASH2 regulator is operating.

COFF

MSTR

and VBACK >

).

Page 20

In active mode the RF regulators are controlled by SW writing into UEM’s
registers wanted settings: VR1A can be enabled or disabled. VR2 can be
enabled or disabled and its output voltage can be programmed to be

 Nokia Corporation

Issue 1 10/2001

PAMS Technical Documentation

2.78V or 3.3V. VR4 –VR7 can be enabled or disabled or forced into low
quiescent current mode. VR3 is always enabled in active mode.

Sleep mode

Sleep mode is entered when both MCU and DSP are in stand–by mode.
Sleep is controlled by both processors. When SLEEPX low signal is de­tected UEM enters SLEEP mode. VCORE, VIO and VFLASH1 regulators
are put into low quiescent current mode. All RF regulators are disabled in
SLEEP. When SLEEPX=1 is detected UEM enters ACTIVE mode and all
functions are activated.

The sleep mode is exited either by the expiration of a sleep clock counter
in the UEM or by some external interrupt, generated by a charger con­nection, key press, headset connection etc.

In sleep mode VCTCXO is shut down and 32 kHz sleep clock oscillator is
used as reference clock for the baseband.

Charging

The battery voltage, temperature, size and current are measured by the
UEM controlled by the charging software running in the UPP.

NHM–7

System Module & UI

The charging control circuitry (CHACON) inside the UEM controls the
charging current delivered from the charger to the battery. The battery
voltage rise is limited by turning the UEM switch off when the battery volt­age has reached 4.2 V. Charging current is monitored by measuring the
voltage drop across a 220 mOhm resistor.

Supply Voltage Regulation

Supply voltage regulation is controlled by UEM asic. There are six sepa­rate regulators used by baseband block.

BB Regulators

Signal Min Nom Max Note

VANA 2.70V 2.78V 2.86V I
VFLASH1 2.70V 2.78V 2.86V I

VFLASH2 2.70V 2.78V 2.86V I
VSIM 1.745V

2.91V

VIO 1.72V 1.8V 1.88V I

VCORE 1.0V

1.235V

1.425V

1.710V

1.8V

3.0V

1.053V

1.3V

1.5V

1.8V

1.855V

3.09V

1.106V

1.365V

1.575V

1.890V

= 80mA

max

= 70mA

max

I

= 1.5mA

Sleep

= 40mA

max

I

= 25mA

max

I

= 0.5mA

Sleep

= 150mA

max

I

= 0.5mA

Sleep

I

= 200mA

max

I

= 0.2mA

Sleep

Default value =

1.5V

Issue 1 10/2001

 Nokia Corporation

Page 21

NHM–7
System Module & UI

Battery

Li–ion battery pack BLB–2 is used in NHM–7.
Nominal discharge cut–off voltage 3.1V
Nominal battery voltage 3.6V
Nominal charging voltage 4.2V

Pin numbering of battery pack

Signal name Pin number Function

VBAT 1 Positive battery terminal

BSI 2 Battery capacity measurement (fixed resistor inside the

BTEMP 3 Battery temperature measurement (measured by ntc

GND 4 Negative/common battery terminal

PAMS Technical Documentation

battery pack)

resistor inside pack)

BLB–2 battery pack pin order

Power Up and Reset

Power up and reset is controlled by the UEM ASIC. NHM–7 baseband
can be powered up in following ways:

1. Press power button which means grounding the PWRONX pin of the
UEM

2. Connect the charger to the charger input

3. Supply battery voltage to the battery pin

4. RTC Alarm, the RTC has been programmed to give an alarm

1 (+)2(BSI)3(BTEMP)4(GND)

Page 22

After receiving one of the above signals, the UEM counts a 20ms delay
and then enters it’s reset mode. The watchdog starts up, and if the battery
voltage is greater than Vcoff+ a 200ms delay is started to allow refer­ences etc. to settle. After this delay elapses the VFLASH1 regulator is en­abled. 500us later VR3, VANA, VIO and VCORE are enabled. Finally the
PURX (Power Up Reset) line is held low for 20 ms. This reset, PURX, is
fed to the baseband ASIC UPP, resets are generated for the MCU and

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Issue 1 10/2001

PAMS Technical Documentation

the DSP. During this reset phase the UEM forces the VCTCXO regulator
on regardless of the status of the sleep control input signal to the UEM.
The FLSRSTx from the ASIC is used to reset the flash during power up
and to put the flash in power down during sleep. All baseband regulators
are switched on at the UEM power on except SIM and VFLASH2 regula­tors which are controlled by the MCU. The UEM internal watchdogs are
running during the UEM reset state, with the longest watchdog time se­lected. If the watchdog expires the UEM returns to power off state. The
UEM watchdogs are internally acknowledged at the rising edge of the
PURX signal in order to always give the same watchdog response time to
the MCU.

A/D Channels

The UEM contains the following A/D converter channels that are used for
several measurement purpose. The general slow A/D converter is a 10 bit
converter using the the UEM interface clock for the conversion. An inter­rupt will be given at the end of the measurement.

NHM–7

System Module & UI

The UEM’s 11–channel analog to digital converter is used to monitor
charging functions, battery functions, voltage levels in external accessory
detection inputs, user interface and RF functions.

When the conversion is started the converter input is selected. Then the
signal processing block creates a data with MSB set to ’1’ and and others
to ’0’. In the D/A converter this data controls the switches which connect
the input reference voltage (VrefADC) to the resistor network. The gener­ated output voltage is compared with the input voltage under measure­ment and if the latter is greater, MSB remains ’1’ else it is set ’0’. The fol­lowing step is to test the next bit and the next...until LSB is reached. The
result is then stored to ADCR register for UPP to read.

The monitored battery functions are battery voltage (VBATADC), battery
type (BSI) and battery temperature (BTEMP) indication.

The battery type is recognized through a resistive voltage divider. In
phone there is a 100kOhm pull up resistor in the BSI line and the battery
has a pull down resistor in the same line. Depending on the battery type
the pull down resistor value is changed. The battery temperature is mea­sured equivalently except that the battery has a NTC pull down resistor in
the BTEMP line.

KEYB1&2 inputs are used for keyboard scanning purposes. These inputs
are also routed internally to the miscellaneous block. In NHM–7 KEYB1
input is used for flip detection.

The HEADINT and HOOKINT are external accessory detection inputs
used for monitoring voltage levels in these inputs. They are routed inter­nally from the miscellaneous block and they are connected to the convert­er through a 2/1 multiplexer.

The monitored RF functions are PATEMP and VCXOTEMP detection. PA­TEMP input is used to measure temperature of the RFIC, Hagar. VCXO­TEMP is not used in NHM–7.

Issue 1 10/2001

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Page 23

NHM–7
System Module & UI

FM Radio

FM radio circuitry is implemented using highly integrated radio IC,
TEA5757. Only few external components like filters, discriminator and ca­pacitors are needed.

TEA5757 is an integrated AM/FM stereo radio circuit including digital tun­ing and control functions. NHM–7 radio is implemented as superhetero­dyne FM mono receiver. FM stage of the TEA5757 incorporates a tuned
RF stage, a double balanced mixer, one pin oscillator and is designed for
distributed IF ceramic filters. IF frequency is 10.7 MHz.

Channel tuning and other controls are controlled by the MCU. Reference
clock, 75kHz, is generated by the UPP CTSI block.

FM radio circuitry is controlled through serial bus interface by the MCU
SW. TEA5757 informs MCU when channel is tuned by setting
signal to logic ’0’.

Digital Interface

PAMS Technical Documentation

FMTuneX

UPP TEA5757

GenIO(3)

GenIO(12)
GenIO(11)
GenIO(8)

GenIO(27)

NOTE:

FMCtrlClk

needs to be set to logic ’1’ when data is not written or

FMClk

FMCtrlDa
FMCtrlClk
FMWrEn

FMTuneX

read. This is required for correct operation of the

FM radio audio & antenna connections

Bottom
Connector

1000Ω@100MHz

XTAL

VIO

DATA
BUS–CLK
WR–EN

VIO

MO/ST

FMTuneX

signal.

UEM TEA5757

XEARP

XEARN

Page 24

1n

1n

18pF18pF

72nH

 Nokia Corporation

HF

MIC3

HFCM

100nF

3.9nF

4.7kΩ
AFLO

100kΩ

FM_RFI

Issue 1 10/2001

PAMS Technical Documentation

IR Module

The IR interface, when using 2.7V transceiver, is designed into the UEM.
The IR link supports speeds from 9600 bit/s to 1.152 MBit/s up to dis­tance of 1m. Transmission over the IR if half–duplex.

The lenght of the transmitted IR pulse depends on the speed of the trans­mission. When 230.4 kbit/s or less is used as a transmission speed, pulse
length is maximum 1.63us. If transmission speed is set to 1.152Mbit/s the
pulse length is 154ns according to IrDA specification.

Backup Battery

Backup battery is used in case when main battery is either removed or
discharged. Backup battery is used for keeping real-time clock running for
minimum of 30 minutes.

Rechargeable backup battery is connected between UEM VBACK and
GND. In UEM backup battery charging high limit is set to 3.2V. The cut–
off limit voltage (V
charging is controlled by MCU by writing into UEM register.

BUCoff–

NHM–7

System Module & UI

) for backup battery is 2.0V. Backup battery

Polyacene SMD battery type is used. The nominal capacity of the battery
is 0.2 mAh.

SIM Interface

UEM contains the SIM interface logic level shifting. SIM interface can be
programmed to support 3V and 1.8V SIMs. SIM supply voltage is se­lected by a register in the UEM. It is only allowed to change the SIM sup­ply voltage when the SIM IF is powered down.

The SIM power up/down sequence is generated in the UEM. This means
that the UEM generates the RST signal to the SIM. Also the SIMCardDet
signal is connected to UEM. The card detection is taken from the BSI sig­nal, which detects the removal of the battery. The monitoring of the BSI
signal is done by a comparator inside UEM. The comparator offset is
such that the comparator output do not alter state as long as the battery
is connected. The threshold voltage is calculated from the battery size
specifications.

The SIM interface is powered up when the SIMCardDet signal indicates
”card in”. This signal is derived from the BSI signal.

Parameter Variable Min Typ Max Unit

SIMCARDet, BSI comparator Threshold Vkey 1.94 2.1 2.26 V
SIMCARDet, BSI comparator Hysteresis (1) Vsimhyst 50 75 100 mV

The whole SIM interface locates in two chip UPP and UEM.
The SIM interface in the UEM contains power up/down, port gating, card

detect, data receiving, ATR–counter, registers and level shifting buffers
logic. The SIM interface is the electrical interface between the Subscriber
Identity Module Card (SIM Card) and mobile phone (via UEM device).

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Page 25

NHM–7
System Module & UI

The data communication between the card and the phone is asynchro­nous half duplex. The clock supplied to the card is in GSM system 1.083
MHz or 3.25 MHz. The data baud rate is SIM card clock frequency di­vided by 372 (by default), 64, 32 or 16. The protocol type, that is sup­ported, is T=0 (asynchronous half duplex character transmission as de­fined in ISO 7816–3).

PAMS Technical Documentation

SIM

C5 C6 C7

C1C2C3

From Battery Type contact

C8

C4

The internal clock frequency from UPP CTSI block is 13 MHz in GSM.
Thus to achieve the minimum starting SIMCardClk rate of 3.25 MHz (as is
required by the authentication procedure and the duty cycle requirement
of between 40% and 60%) then the slowest possible clock supplied to the
SIM has to be in the GSM system clock rate of 13/4 MHz.

SIMDATA

SIMCLK

VSIM

BSI

SIMRST

GND

UEM

SIMIF
register

SIMIO
SIMClk
Data

UEM
digital
logic

GND

SIMIO

SIMClk

Data

UPP

UIF Block

UEMInt

CBusDa

CBusEnX

CBusClk

Buzzer

Buzzer is used to generate alerting tones and melodies to indicate incom­ing call. It is also used to generate keypress and warning tones for the
user. Buzzer is controlled by PWM (Pulse Width Modulation) signal gener­ated by the buzzer driver of the UEM. Target SPL is 100dB (A) at 5cm.

Internal Microphone

The internal microphone capsule is mounted in the bottom connector. Mi­crophone is omnidirectional. The internal microphone is connected to the
UEM microphone input MIC1P/N. The microphone input is asymmetric
and microphone bias is provided by the UEM MIC1B. The microphone
input on the UEM is ESD protected. Spring contacts are used to connect
the microphone contacts to the main PCB.

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PAMS Technical Documentation

UEM

MIC1B

MIC1N

33nF

NHM–7

System Module & UI

22pF 100nF

2k2

UPP

33nF

MIC1P

2k2

600Ω@100MHz

27pF

22pF

UPP (Universal Phone Processor) is the digital ASIC of the baseband.
UPP includes 8MBit internal RAM, ARM7 Thump 16/32–bit RISC MCU
core, LEAD3 16–bit DSP core, ROM for MCU boot code and all digital
control logic.

Main functions of the custom logic are:

1. Interface between system logic and MCU/DSP (BodyIf)

2. Clocking, timing, sleep and interrupt block (CTSI) for system
timing control

3. MCU controlled general purpose USART, MBUS USART and
general purpose IOs (PUP).

4. SIM card interface (SIMIf)

5. GSM coder (Coder)

6. GPRS support (GPRSCip)

7. Interfaces for keyboard, LCD and UEM (UIF)

8. Accessory interface for IrDA SIR, IrDA FIR and LPRF (AccIf)

9. SW programmable RF interface (MFI)

10. Programmable serial interface for Hagar RFIC (SCU)

11. Test interface (TestIf)

Memory Block

For the MCU UPP includes ROM, 2 kbytes, that is used mainly for boot
code of MCU. To speed up the MCU operation small 64 byte cache is
also integrated as a part of the MCU memory interface. For program
memory 8Mbit (512 x 16bit) PDRAM is integrated. RAM block can also be
used as data memory and it is byte addressable. RAM is mainly for MCU
purposes but also DSP has also access to it if needed.

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Page 27

NHM–7
System Module & UI

MCU code is stored into external flash memory. Size of the flash is 64Mbit
(4096 x 16bit) The NHM–7 baseband supports a burst mode flash with
multiplexed address/data bus. Access to the flash memory is performed
as 16–bit access. The flash has Read While Write capabilities which
makes the emulation of EEPROM within the flash easy.

PAMS Technical Documentation

Page 28

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PAMS Technical Documentation

RF Module

This RF module takes care of all RF functions of the engine. RF circuitry
is located on one side (B–side) of the PCB.

EMC leakage is prevented by using a metal B–shield, which screens the
whole RF side (included FM radio) of the engine. The conductive (silicon
or metal) gasket is used between the PCB and the shield. The metal
B–shield is separated to three blocks. The first one include the FM radio.
The second block include the PA, antenna switch, LNAs and dual RX
SAW. The last, but not least, block include the Hagar RF IC, VCO,
VCTCXO, baluns and balanced filters. The blocks are divided on the ba­sis that the attenuation between harmonics of the transmitter and the
VCO signal (including Hagar IC) is a high (over 100dB). The VCO and TX
outputs of the Hagar RF IC are located one another as far as possible. In
order to guard against the radiated spurious inside blocks, the RF trans­mission lines are made with striplines after PA.

NHM–7

System Module & UI

The baseband circuitry is located on the A–side of the board, which is
shielded with a metallized frame and ground plane of the UI–board.

Maximum height inside on B–side is 1.8 mm. Heat generated by the cir­cuitry will be conducted out via the PCB ground planes and metallic
B–shield

RF Frequency Plan

925–960
MHz

1805–1880
MHz

f/4

HAGAR

I–signal

I–signalI–signalI–signal
Q–signal

f

f

RX

f/2f/4

f

f/2

f

3420–

PLL

3840
MHz

Issue 1 10/2001

1710–1785
MHz

880–915
MHz

 Nokia Corporation

26 MHz

VCTCXO

I–signal

Q–signal

TX

Page 29

NHM–7
System Module & UI

DC characteristics

Regulators

Transceiver has a multifunction power management IC on baseband sec­tion, which contains among other functions; 7 pcs of 2.78 V regulators
and 4.8V up–switcher for charge pump.
All regulators can be controlled individually with 2.78 V logic directly or
through control register. In GSM direct controls are used to get fast
switching, because regulators are used to enable RF–functions.

Use of the regulators can be seen in the Power Distribution Diagram.
VrefRF01and VrefRF02 are used as the reference voltages for HAGAR
RF–IC, VrefRF01 (1.35V) for bias reference and VrfeRF02 (1.35V) for RX
ADC’s reference.

Regulators (except VR2 and VR7) are connected to HAGAR. Different
modes were switched on by the aid of serial bus.

PAMS Technical Documentation

List of the needed supply voltages :

Volt. source Load

VR1 PLL charge pump (4,8 V)
VR2 TX modulator
VR3 VCTCXO + buffer
VR4 HAGAR IC (LNAs+mixer+DTOS)
VR5 HAGAR IC (div+LO–buff+prescaler),
VR6 HAGAR (Vdd_bb)
VR7 VCO
VrefRF01 ref. voltage for HAGAR
VrefRF02 ref. voltage for HAGAR
Vbatt PA

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PAMS Technical Documentation

Power Distribution Diagram

NHM–7

System Module & UI

SOURCE

VR1

VR2

VR3

VR4

VR5

4.75 V +/– 3.2 %
10 mA

2.78 V +/– 3 %

100 mA

2.78 V +/– 3 %

20 mA

2.78 V +/– 3 %

50 mA

2.78 V +/– 3 %

50 mA

LOAD

Charge pump in HAGAR

TX IQ modulator, power
control opamp in

Hagar
VCTCXO

VCTCXO buffer in Hagar

E–GSM & DCS LNA

RX mixer in Hagar

DTOS in Hagar

PLL in Hagar

UEM

VR6

VR7

VrefRF01

VrefRF02

2.78 V +/– 3 %

50 mA

2.78 V +/– 3 %

50 mA

1.35 v +/– 1.15 %

< 100 ua

1.35 V +/– 2 %

< 100 ua

Dividers in Hagar

LO buffers in Hagar

Prescaler in Hagar

Power detector

BB section in Hagar

SHF VCO Module

Ref. volt. for Hagar RX

Ref. volt. for Hagar

VBATT

Issue 1 10/2001

3.2 – 4.5 V

1700 mA (max)

 Nokia Corporation

Dual PA module

Page 31

NHM–7
System Module & UI

PAMS Technical Documentation

RF characteristics

Item Values (E–GSM / GSM1800)

Receive frequency range 925 ... 960 MHz / 1805...1880 MHz
Transmit frequency range 880 ... 915 MHz / 1710...1785 MHz
Duplex spacing 45 MHz / 95 MHz
Channel spacing 200 kHz
Number of RF channels 174 / 374
Power class 4 (2 W) / 1 (1 W)
Number of power levels 15 / 16

Transmitter characteristics

Item Values (E–GSM/GSM1800)

Type Direct conversion, nonlinear, FDMA/TDMA
LO frequency range 3520...3660 MHz / 3420...3570 MHz
Output power 2 W / 1 W peak
Gain control range min. 30 dB
Maximum phase error ( RMS/peak ) max 5 deg./20 deg. peak

Receiver characteristics

Item Values, E–GSM/GSM1800

Type Direct conversion, Linear, FDMA/TDMA
LO frequencies 3700...3840 MHz / 3610...3760 MHz
Typical 3 dB bandwidth +/– 91 kHz
Sensitivity min. – 102 dBm (GSM1800 norm.cond. only)
Total typical receiver voltage gain ( from antenna

to RX ADC )
Receiver output level ( RF level –95 dBm ) 230 mVpp, single–ended I/Q signals to RX ADCs
Typical AGC dynamic range 83 dB
Accurate AGC control range 60 dB
Typical AGC step in LNA 30 dB GSM1800 25 dB EGSM
Usable input dynamic range –102 ... –10 dBm
RSSI dynamic range –110 ... –48 dBm
Compensated gain variation in receiving band +/– 1.0 dB

86 dB

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Issue 1 10/2001

Issue 1 10/2001

 Nokia Corporation

ANT SW

PCN

Dual SAW

EGSM

Coupler

LNA

LNA

SAW

SAW

HAGAR

f/2

f/2

RF Block Diagram

I

Q

VrefRF01

PAMS Technical Documentation

f

VrefRF02

CTRL

SERIAL CTRL
BUS

f

PLL

SHF
VCO

f

f/2

13 MHz

f/2

to ASIC

f

f

f/2

26 MHz

VCXO

AFC

TXC

TXP

System Module & UI

Page 33

Dual PA

SAW

PCN

EGSM

TXIP
TXIN

TXQP
TXQN

RF_temp

NHM–7

NHM–7
System Module & UI

Frequency synthesizers

VCO frequency is locked with PLL into stable frequency source, which is
a VCTCXO–module ( voltage controlled temperature compensated crystal
oscillator ). VCTCXO is running at 26 MHz. Temperature drifting is con­trolled with AFC ( automatic frequency control ) voltage. VCTCXO is
locked into frequency of the base station. AFC is generated by baseband
with a 11 bit conventional DAC. 13MHz VCTCXO can also be used if mul­tislot operations is not needed. If more than 1(RX)+1(TX) slot is wanted
settling times have to be less than 300us from channel to channel. This
can be achieved when PLL loopbandwith is ~35kHz. Noise coming from
the loop and noise from dividers (20*logN) increases rms phase error
over 3 degrees which is the maximum for synthesizer.

R

f

ref

f_out /

M

PHASE

DET.

CHARGE

PUMP

PAMS Technical Documentation

26 MHz frequency reference
AFC–controlled VCTCXO

LP

f_out

VCO

Kd

M

Kvco

M = A(P+1) + (N–A)P=

= NP+A

PLL is located in HAGAR RF–IC and is controlled via serial RFBus. There
is 64/65 (P/P+1) prescaler, N– and A–divider, reference divider, phase de­tector and charge pump for the external loop filter. SHF local signal, gen­erated by a VCO–module ( VCO = voltage controlled oscillator ), is fed
thru 180deg balanced phase shifter to prescaler. Prescaler is a dual mo­dulus divider. Output of the prescaler is fed to N– and A–divider, which
produce the input to phase detector. Phase detector compares this signal
to reference signal (400kHz), which is divided with reference divider from
VCTCXO output. Output of the phase detector is connected into charge
pump, which charges or discharges integrator capacitor in the loop filter
depending on the phase of the measured frequency compared to refer­ence frequency.

Loop filter filters out comparison pulses of phase detector and generates
DC control voltage to VCO. Loop filter defines step response of the PLL (
settling time ) and effects to stability of the loop, that’s why integrator ca­pacitor has a resistor for phase compensation. Other filter components
are for sideband rejection. Dividers are controlled via serial bus. RFBus­Data is for data, RFBusClk is serial clock for the bus and RFBusEna1X is
a latch enable, which stores new data into dividers.

Page 34

LO–signal is generated by SHF VCO module. VCO has double frequency
in GSM1800 and x 4 frequency in EGSM compared to actual RF channel

 Nokia Corporation

Issue 1 10/2001

PAMS Technical Documentation

frequency. LO signal is divided by two or four in HAGAR (depending on
system mode).

Receiver

Receiver is a direct conversion, dual band linear receiver. Received RF–
signal from the antenna is fed via RF–antenna switch module to 1st RX
bandpass RF–SAW filters and MMIC LNAs (low noise amplifier). RF–an­tenna switch module contains upperband and lowerband operation. The
LNA amplified signal is fed to 2nd RX bandpass RF–SAW filters. Both 2
RX bandpass RF–SAW filters have un–bal/bal configuration to get the
balanced (balanced) feed for Hagar.

Discrete LNAs have three gain levels. The first one is max. gain, the se­cond one is about –30dB(GSM1800) and –25dB(EGSM900) below max.
gain and the last one is off state. The gain selection control of LNAs
comes from HAGAR IC.

RX bandpass RF–SAW filters define how good are the blocking charac­teristics against spurious signals outside passband and the protection
against spurious responses.

NHM–7

System Module & UI

nd

Differential RX signal is amplified and mixed directly down to BB frequen­cy in HAGAR. Local signal is generated with external VCO. VCO signal is
divided by 2 (GSM1800) or by 4 (E–GSM900). PLL and dividers are in
HAGAR–IC.

From the mixer output to ADC input RX signal is divided into I– and
Q–signals. Accurate phasing is generated in LO dividers. After the mixer
DTOS amplifiers convert the differential signals to single ended. DTOS
has two gain stages. The first one has constant gain of 12dB and 85kHz
cut off frequency. The gain of second stage is controlled with control sig­nal g10. If g10 is high (1) the gain is 6dB and if g10 is low (0) the gain of
the stage is –4dB.

The active channel filters in HAGAR provides selectivity for channels
(–3dB @ +/–91 kHz typ.). Integrated base band filter is active–RC–filter
with two off–chip capacitors. Large RC–time constants needed in the
channel select filter of direct conversion receiver are produced with large
off–chip capacitors because the impedance levels could not be increased
due to the noise specifications. Baseband filter consists of two stages,
DTOS and BIQUAD. DTOS is differential to single–ended converter hav­ing 8dB or 18dB gain. BIQUAD is modified Sallen–Key Biquad.

Integrated resistors and capacitors are tunable. These are controlled with
a digital control word. The correct control words that compensate for the
process variations of integrated resistors and capacitors and of tolerance
of off chip capacitors are found with the calibration circuit.

Next stage in the receiver chain is AGC–amplifier, also integrated into HA­GAR. AGC has digital gain control via serial mode bus. AGC–stage pro­vides gain control range (40 dB, 10 dB steps) for the receiver and also the
necessary DC compensation. Additional 10 dB AGC step is implemented
in DTOS stages.

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 Nokia Corporation

Page 35

NHM–7
System Module & UI

DC compensation is made during DCN1 and DCN2 operations (controlled
via serial bus). DCN1 is carried out by charging the large external capaci­tors in AGC stages to a voltage which cause a zero dc–offset. DCN2 set
the signal offset to constant value (VrefRF_02 1.35 V). The VrefRF_02
signal is used as a zero level to RX ADCs.

Single ended filtered I/Q–signal is then fed to ADCs in BB. Input level for
ADC is 1.45 Vpp max.

Rf–temp port is intended to be used for compensation of RX SAW filters
thermal behavior. This phenomena will have impact to RSSI reporting ac­curacy. The current information is –35ppm/C for center frequency drift
for all bands. This temperature information is a voltage over two diodes
and diodes are fed with constant current.

Transmitter

Transmitter chain consists of two final frequency IQ–modulators for upper
and lower band, a dual power amplifier and a power control loop.

PAMS Technical Documentation

I– and Q–signals are generated by baseband. After post filtering (RC–net­work) they go into IQ–modulator in HAGAR. LO–signal for modulator is
generated by VCO and is divided by 2 or by 4 depending on system
mode. There are separate outputs one for EGSM and one for GSM1800.

In EGSM branch there is a SAW filter before PA to attenuate unwanted
signals and wideband noise from the Hagar IC.

The final amplification is realized with dual band power amplifier. It has
two different power chains one for EGSM and one for GSM1800. PA is
able to produce over 2 W (0 dBm input level) in EGSM band and over 1
W (0 dBm input level) in upperband band into 50 ohm output . Gain con­trol range is over 45 dB to get desired power levels and power ramping
up and down.

Harmonics generated by the nonlinear PA are filtered out with filtering in­side the antenna switch –module.

Power control circuitry consists of discrete power detector (common for
lower and upperband) and error amplifier in HAGAR. There is a direction­al coupler connected between PA output and antenna switch. It is a dual­band type and has input and outputs for both systems. Dir. coupler takes
a sample from the forward going power with certain ratio. This signal is
rectified in a schottky–diode and it produces a DC–signal after filtering.

The possibility to improve efficiency in low power levels has been speci­fied in power amplifier module. The improved efficiency will take place on
power level 7 and lower in EGSM. For this option there is control input
line in PA module.

AFC function

AFC is used to lock the transceivers clock to frequency of the base sta­tion. AFC–voltage is generated in BB with 11 bit DA–converter. There is a

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Issue 1 10/2001

PAMS Technical Documentation

RC–filter in AFC control line to reduce the noise from the converter. Set­tling time requirement for the RC–network comes from signalling, how
often PSW ( pure sine wave ) slots occur. They are repeated after 10
frames. AFC tracks base station frequency continuously, so transceiver
has a stable frequency, because changes in VCTCXO–output don’t occur
so fast ( temperature ).

Settling time requirement comes also from the start up–time allowed.
When transceiver is in sleep mode and ”wakes” up to receive mode ,
there is only about 5 ms for the AFC–voltage to settle. When the first
burst comes in system clock has to be settled into +/– 0.1 ppm frequency
accuracy. The VCTCXO–module requires also 5 ms to settle into final
frequency. Amplitude rises into full swing in 1 ... 2 ms, but frequency set­tling time is higher so this oscillator must be powered up early enough.

DC–compensation

DC compensation is made during DCN1 and DCN2 operations (controlled
via serial bus). DCN1 is carried out by charging the large external capaci­tors in AGC stages to a voltage which cause a zero dc–offset. DCN2 set
the signal offset to constant value (RXREF 1.35 V). The RXREF signal is
used as a zero level to RX ADCs.

NHM–7

System Module & UI

Issue 1 10/2001

 Nokia Corporation

Page 37

NHM–7
System Module & UI

UI Board LK5

NHM–7 consists of separate UI board, named as LK5, which includes
contacts for the keypad domes and LEDs for keypad illumination. UI
board is connected to main PWB through 16 pole board–to–board con­nector with springs. Signals of the connector are described in section Ex­ternal and Internal Signals and Connections.

5x4 matrix keyboard is used in NHM–7. Key pressing is detected by scan­ning procedure. Keypad signals are connected UPP keyboard interface.

When no key is pressed row inputs are high due to UPP internal pull–up
resistors. The columns are written zero. When key is pressed one row is
pulled down and an interrupt is generated to MCU. After receiving inter­rupt MCU starts scanning procedure. All columns are first written high and
then one column at the time is written down. All other columns except one
which was written down are set as inputs. Rows are read while column at
the time is written down. If some row is down it indicates that key which is
at the cross point of selected column and row was pressed. After detect­ing pressed key all register inside the UPP are reset and columns are
written back to zero.

PAMS Technical Documentation

LCD & Keypad Illumination

In NHM–7 white leds are used for LCD and keypad illumination. For LCD
illumination four leds are used and for keypad six leds.

Current through leds is controlled by transistor circuitry. External transis­tor driver circuitry is used as constant current source in order to prevent
any change in battery voltage be seen as changing led brightness. Bat­tery voltage is changing for example during charging depending on a
charger, battery type and age.

VBATT

10R

Keypad leds

VBATT

VBATT

15R

LCD leds

Page 38

KLight

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330R

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PAMS Technical Documentation

LEDs are controlled by the UEM PWM outputs. Both LEDs are controlled
by

KLight

output of the UEM. Current flow through the LEDS is set by
biasing the transistor and limiting the current by resistors. Current is set
separately to keyboard and LCD leds.

Internal Speaker

The internal earpiece is a dynamic earpiece with an impedance of 32
ohms. The earpiece is low impedance one since the sound pressure is to
be generated using current and not voltage as the supply voltage is re­stricted to 2.7V. The earpiece is driven directly by the UEM and the ear­piece driver in UEM is a bridge amplifier.

UEM

NHM–7

System Module & UI

EARP

EARN

22Ω

22Ω

1000Ω@100MHz

1000Ω@100MHz

27pF 27pF

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Page 39

NHM–7
System Module & UI

PAMS Technical Documentation

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Page 40

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PAMS Technical Documentation

NHM–7 Series Transceivers

Part lists LA5/LK5

Issue 1 10/2001  Nokia Corporation

NHM–7
Part lists LA5/LK5

PAMS Technical Documentation

CONTENTS

Parts list of LA5 (EDMS Issue 11.1) Layout 15 Code: 0201510 3
Parts list of LA5 (EDMS Issue 12.0) Layout 17 Code: 0201510 11
Parts list of LK5 (EDMS Issue 3.1) Layout 11 Code: 0201511 19.

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PAMS Technical Documentation

Part lists LA5/LK5

Parts list of LA5 (EDMS Issue 11.1) Layout 15 Code: 0201510

ITEM CODE DESCRIPTION VALUE TYPE

R102 1430804 Chip resistor 100 k 5 % 0.063 W 5.000
R152 1430762 Chip resistor 2.2 k 5 % 0.063 W 3.000
R154 1430778 Chip resistor 10 k 5 % 0.063 W 8.000
R155 1430804 Chip resistor 100 k 5 % 0.063 W 5.000
R156 1620105 Res network 0w06 2x2k2 j 0404 0404
R157 1620105 Res network 0w06 2x2k2 j 0404 0404
R159 1825031 Varistor array 2xvwm16v vc50 0405 0405
R161 1825031 Varistor array 2xvwm16v vc50 0405 0405
R164 1620103 Res network 0w06 2x22r j 0404 0404
R165 1620103 Res network 0w06 2x22r j 0404 0404
R166 1430137 Chip resistor 1.0 k 1 % 0.063 W 0402
R167 1430137 Chip resistor 1.0 k 1 % 0.063 W 0402
R200 1419003 Chip resistor 0.22 5 % 1210
R202 1620067 Res network 0w06 4x100k j 0804 0804
R203 1620029 Res network 0w06 2x4k7 j 0404 0404
R301 1430754 Chip resistor 1.0 k 5 % 0.063 W 1.000
R304 1430700 Chip resistor 10 5 % 0.063 W 7.000
R305 1430744 Chip resistor 470 5 % 0.063 W 1.000
R306 1825021 Chip varistor vwm14v vc46v 0402 0402
R307 1430706 Chip resistor 15 5 % 0.063 W 1.000
R310 1430834 Chip resistor 3.3 M 5 % 0.063 W 2.000
R311 1430834 Chip resistor 3.3 M 5 % 0.063 W 2.000
R350 1419009 Chip resistor 4.7 5 % 1210
R352 1430804 Chip resistor 100 k 5 % 0.063 W 5.000
R358 1430778 Chip resistor 10 k 5 % 0.063 W 8.000
R359 1430722 Chip resistor 68 5 % 0.063 W 1.000
R360 1430802 Chip resistor 82 k 5 % 0.063 W 1.000
R361 1430762 Chip resistor 2.2 k 5 % 0.063 W 3.000
R362 1430770 Chip resistor 4.7 k 5 % 0.063 W 7.000
R363 1430778 Chip resistor 10 k 5 % 0.063 W 8.000
R364 1430804 Chip resistor 100 k 5 % 0.063 W 5.000
R365 1430778 Chip resistor 10 k 5 % 0.063 W 8.000
R370 1430796 Chip resistor 47 k 5 % 0.063 W 2.000
R371 1430778 Chip resistor 10 k 5 % 0.063 W 8.000
R380 1430796 Chip resistor 47 k 5 % 0.063 W 2.000
R381 1430804 Chip resistor 100 k 5 % 0.063 W 5.000
R388 4120071 Asip emif03–sim01 sim filter bga8 BGA8
R420 1430726 Chip resistor 100 5 % 0.063 W 3.000
R421 1430778 Chip resistor 10 k 5 % 0.063 W 8.000
R422 1430268 Chip resistor 27 k 1 % 0.063 W 0603
R423 1430778 Chip resistor 10 k 5 % 0.063 W 8.000
R450 1430770 Chip resistor 4.7 k 5 % 0.063 W 7.000
R500 1430726 Chip resistor 100 5 % 0.063 W 3.000
R501 1430700 Chip resistor 10 5 % 0.063 W 7.000
R502 1430846 Chip resistor 2.7 k 1 % 0.063 W 2.000

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NHM–7
Part lists LA5/LK5

R550 1430740 Chip resistor 330 5 % 0.063 W 1.000
R551 1430700 Chip resistor 10 5 % 0.063 W 7.000
R558 1430690 Chip jumper 1.000
R600 1620081 Res network 0w03 4x22r j 0804 0804
R602 1430770 Chip resistor 4.7 k 5 % 0.063 W 7.000
R603 1430846 Chip resistor 2.7 k 1 % 0.063 W 2.000
R604 1430770 Chip resistor 4.7 k 5 % 0.063 W 7.000
R606 1430784 Chip resistor 15 k 5 % 0.063 W 1.000
R607 1620033 Res network 0w06 2x5k6 j 0404 0404
R608 1620033 Res network 0w06 2x5k6 j 0404 0404
R610 1430700 Chip resistor 10 5 % 0.063 W 7.000
R650 1430137 Chip resistor 1.0 k 1 % 0.063 W 0402
R651 1430907 Chip resistor 11 k 1 % 0.063 W 1.000
R652 1430700 Chip resistor 10 5 % 0.063 W 7.000
R660 1430762 Chip resistor 2.2 k 5 % 0.063 W 3.000
R661 1430774 Chip resistor 6.8 k 5 % 0.063 W 1.000
R700 1620121 Res network 0w06 2x220r j 0404 0404
R701 1620121 Res network 0w06 2x220r j 0404 0404
R703 1430714 Chip resistor 33 5 % 0.063 W 1.000
R704 1430718 Chip resistor 47 5 % 0.063 W 2.000
R705 1620515 Res network 0w04 1DB ATT 0400404
R706 1430693 Chip resistor 5.6 5 % 0.063 W 2.000
R707 1430693 Chip resistor 5.6 5 % 0.063 W 2.000
R709 1430734 Chip resistor 220 5 % 0.063 W 1.000
R751 1430770 Chip resistor 4.7 k 5 % 0.063 W 7.000
R752 1430788 Chip resistor 22 k 5 % 0.063 W 1.000
R753 1430770 Chip resistor 4.7 k 5 % 0.063 W 7.000
R754 1430726 Chip resistor 100 5 % 0.063 W 3.000
R755 1430718 Chip resistor 47 5 % 0.063 W 2.000
R756 1430770 Chip resistor 4.7 k 5 % 0.063 W 7.000
R757 1430778 Chip resistor 10 k 5 % 0.063 W 8.000
R780 1430700 Chip resistor 10 5 % 0.063 W 7.000
R781 1430700 Chip resistor 10 5 % 0.063 W 7.000
C100 2320744 Ceramic cap. 1.0 n 10 % 50 V 0402
C101 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C102 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C103 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C105 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C107 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C109 2315201 Chip array np0 2x27p k 25v 0405 0405
C111 2315205 Chip array x5r 2x1n m 16v 0405 0405
C112 2320756 Ceramic cap. 3.3 n 10 % 50 V 0402
C113 2320756 Ceramic cap. 3.3 n 10 % 50 V 0402
C114 2320604 Ceramic cap. 18 p 5 % 50 V 0402
C115 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C151 2315209 Chip array x5r 2x33n m 10v 0405 0405
C152 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C153 2315205 Chip array x5r 2x1n m 16v 0405 0405
C154 2320744 Ceramic cap. 1.0 n 10 % 50 V 0402

PAMS Technical Documentation

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NHM–7

PAMS Technical Documentation

C155 2315209 Chip array x5r 2x33n m 10v 0405 0405
C156 2320604 Ceramic cap. 18 p 5 % 50 V 0402
C157 2320481 Ceramic cap. 5R 1 u 10 % 0603
C158 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C160 2315203 Chip array x5r 2x10n m 16v 0405 0405
C161 2315213 Chip array np0 2x22p k 25v 0405 0405
C163 2315213 Chip array np0 2x22p k 25v 0405 0405
C165 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C166 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C168 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C201 2320481 Ceramic cap. 5R 1 u 10 % 0603
C202 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C203 2320481 Ceramic cap. 5R 1 u 10 % 0603
C204 2320481 Ceramic cap. 5R 1 u 10 % 0603
C205 2320481 Ceramic cap. 5R 1 u 10 % 0603
C206 2320481 Ceramic cap. 5R 1 u 10 % 0603
C207 2320481 Ceramic cap. 5R 1 u 10 % 0603
C208 2320481 Ceramic cap. 5R 1 u 10 % 0603
C209 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C210 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C211 2320481 Ceramic cap. 5R 1 u 10 % 0603
C212 2320481 Ceramic cap. 5R 1 u 10 % 0603
C213 2320481 Ceramic cap. 5R 1 u 10 % 0603
C214 2320481 Ceramic cap. 5R 1 u 10 % 0603
C215 2320481 Ceramic cap. 5R 1 u 10 % 0603
C218 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C219 2320481 Ceramic cap. 5R 1 u 10 % 0603
C221 2320481 Ceramic cap. 5R 1 u 10 % 0603
C222 2320481 Ceramic cap. 5R 1 u 10 % 0603
C223 2320481 Ceramic cap. 5R 1 u 10 % 0603
C224 2320481 Ceramic cap. 5R 1 u 10 % 0603
C225 2320481 Ceramic cap. 5R 1 u 10 % 0603
C226 2320481 Ceramic cap. 5R 1 u 10 % 0603
C227 2320481 Ceramic cap. 5R 1 u 10 % 0603
C228 2320481 Ceramic cap. 5R 1 u 10 % 0603
C229 2320481 Ceramic cap. 5R 1 u 10 % 0603
C230 2320481 Ceramic cap. 5R 1 u 10 % 0603
C231 2320481 Ceramic cap. 5R 1 u 10 % 0603
C232 2320481 Ceramic cap. 5R 1 u 10 % 0603
C233 2320481 Ceramic cap. 5R 1 u 10 % 0603
C234 2320481 Ceramic cap. 5R 1 u 10 % 0603
C235 2320481 Ceramic cap. 5R 1 u 10 % 0603
C236 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C237 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C238 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C239 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C240 2315203 Chip array x5r 2x10n m 16v 0405 0405
C241 2315203 Chip array x5r 2x10n m 16v 0405 0405
C242 2320805 Ceramic cap. 100 n 10 % 10 V 0402

Part lists LA5/LK5

Issue 1 10/2001

 Nokia Corporation

Page 5

NHM–7
Part lists LA5/LK5

C243 2320481 Ceramic cap. 5R 1 u 10 % 0603
C250 2315213 Chip array np0 2x22p k 25v 0405 0405
C260 2320481 Ceramic cap. 5R 1 u 10 % 0603
C261 2320481 Ceramic cap. 5R 1 u 10 % 0603
C262 2320481 Ceramic cap. 5R 1 u 10 % 0603
C263 2320481 Ceramic cap. 5R 1 u 10 % 0603
C264 2320481 Ceramic cap. 5R 1 u 10 % 0603
C265 2320481 Ceramic cap. 5R 1 u 10 % 0603
C302 2320139 Ceramic cap. 1.0 u 10 % 10 V 0603
C303 2315211 Chip array x5r 2x100n y 10v 0405 0405
C306 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C307 2320604 Ceramic cap. 18 p 5 % 50 V 0402
C308 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C309 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C312 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C319 2320744 Ceramic cap. 1.0 n 10 % 50 V 0402
C320 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C350 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C351 2312243 Ceramic cap. 4.7 u 10 % 0805
C357 2310041 Ceramic cap. 1.5 u 10 % 10 V 0805
C358 2320520 Ceramic cap. 2.2 p 0.25 % 50 V 0402
C359 2320520 Ceramic cap. 2.2 p 0.25 % 50 V 0402
C360 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C361 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C362 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C363 2320481 Ceramic cap. 5R 1 u 10 % 0603
C364 2310793 Ceramic cap. 2.2 u 10 % 10 V 0805
C365 2320481 Ceramic cap. 5R 1 u 10 % 0603
C366 2320481 Ceramic cap. 5R 1 u 10 % 0603
C367 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C368 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C369 2320744 Ceramic cap. 1.0 n 10 % 50 V 0402
C370 2320137 Ceramic cap. 470 n 10 % 10 V 0603
C371 2320137 Ceramic cap. 470 n 10 % 10 V 0603
C372 2320598 Ceramic cap. 3.9 n 5 % 50 V 0402
C373 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C375 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C378 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C389 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C400 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C401 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C402 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C403 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C404 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C405 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C420 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C421 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C422 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C450 2320778 Ceramic cap. 10 n 10 % 16 V 0402

PAMS Technical Documentation

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NHM–7

PAMS Technical Documentation

C451 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C454 2320779 Ceramic cap. 100 n 10 % 16 V 0603
C470 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C471 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C472 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C500 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C501 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C502 2320526 Ceramic cap. 3.9 p 0.25 % 50 V 0402
C503 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C504 2320491 Ceramic cap. 220 n 10 % 10 V 0603
C505 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C506 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C507 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C550 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C551 2320522 Ceramic cap. 2.7 p 0.25 % 50 V 0402
C552 2320516 Ceramic cap. 1.5 p 0.25 % 50 V 0402
C553 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C554 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C555 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C556 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C557 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C600 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C601 2320554 Ceramic cap. 56 p 5 % 50 V 0402
C602 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C603 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C604 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C605 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C607 2315017 Chip array np0 4x470p j 16v 0612 0612
C608 2320783 Ceramic cap. 33 n 10 % 10 V 0402
C609 2320562 Ceramic cap. 120 p 5 % 50 V 0402
C610 2320562 Ceramic cap. 120 p 5 % 50 V 0402
C611 2320783 Ceramic cap. 33 n 10 % 10 V 0402
C612 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C613 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C615 2320558 Ceramic cap. 82 p 5 % 50 V 0402
C616 2320552 Ceramic cap. 47 p 5 % 50 V 0402
C617 2320552 Ceramic cap. 47 p 5 % 50 V 0402
C620 2320481 Ceramic cap. 5R 1 u 10 % 0603
C621 2320481 Ceramic cap. 5R 1 u 10 % 0603
C622 2320481 Ceramic cap. 5R 1 u 10 % 0603
C623 2320481 Ceramic cap. 5R 1 u 10 % 0603
C650 2320554 Ceramic cap. 56 p 5 % 50 V 0402
C652 2320564 Ceramic cap. 150 p 5 % 50 V 0402
C653 2322015 Ceramic cap. 2.2 n 2 % 16 V 0603
C654 2320564 Ceramic cap. 150 p 5 % 50 V 0402
C655 2320481 Ceramic cap. 5R 1 u 10 % 0603
C657 2320520 Ceramic cap. 2.2 p 0.25 % 50 V 0402
C660 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C661 2320805 Ceramic cap. 100 n 10 % 10 V 0402

Part lists LA5/LK5

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 Nokia Corporation

Page 7

NHM–7
Part lists LA5/LK5

C662 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C699 2320518 Ceramic cap. 1.8 p 0.25 % 50 V 0402
C701 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C702 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C703 2320554 Ceramic cap. 56 p 5 % 50 V 0402
C704 2320516 Ceramic cap. 1.5 p 0.25 % 50 V 0402
C705 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C706 2320604 Ceramic cap. 18 p 5 % 50 V 0402
C707 2320518 Ceramic cap. 1.8 p 0.25 % 50 V 0402
C708 2611753 Tantalum cap. 33 u 20 % 16/8 V 6.0x3.2x1.5
C709 2312243 Ceramic cap. 4.7 u 10 % 0805
C710 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C711 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C712 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C713 2320540 Ceramic cap. 15 p 5 % 50 V 0402
C714 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C715 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C716 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C717 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C718 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C719 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C720 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C721 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C722 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C723 2320744 Ceramic cap. 1.0 n 10 % 50 V 0402
C724 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C726 2320508 Ceramic cap. 1.0 p 0.25 % 50 V 0402
C727 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C728 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C729 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C731 2320524 Ceramic cap. 3.3 p 0.25 % 50 V 0402
C751 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C752 2322023 Ceramic cap. 2.2 n 5 % 16 V 0603
C753 2320538 Ceramic cap. 12 p 5 % 50 V 0402
C754 2320538 Ceramic cap. 12 p 5 % 50 V 0402
C756 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C759 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C780 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C781 2320548 Ceramic cap. 33 p 5 % 50 V 0402
L100 3203743 Ferr.bead 0r03 42r/100mhz 3a 0805 0805
L101 3645343 Chip coil 150 n 5 % Q=28/150 MHz 0603
L104 3203801 Chip bead array 2x1000r 0405 0405
L105 3203725 Ferrite bead 600r/100mhz 0402 0402
L106 3203725 Ferrite bead 600r/100mhz 0402 0402
L107 3203725 Ferrite bead 600r/100mhz 0402 0402
L151 3203801 Chip bead array 2x1000r 0405 0405
L356 3645327 Chip coil 72 n 2 % Q=34/150 MHz 0603
L357 3645207 Chip coil 56 n 2 % Q=38/200 MHz 0603
L470 3203725 Ferrite bead 600r/100mhz 0402 0402

PAMS Technical Documentation

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NHM–7

PAMS Technical Documentation

L471 3203725 Ferrite bead 600r/100mhz 0402 0402
L472 3203725 Ferrite bead 600r/100mhz 0402 0402
L500 3646091 Chip coil 6 n 5 % Q=27/800 MHz 0402
L501 3646067 Chip coil 18 n 5 % Q=29/800 MHz 0402
L502 3646091 Chip coil 6 n 5 % Q=27/800 MHz 0402
L503 3646065 Chip coil 12 n 5 % Q=31/800 MHz 0402
L550 3646051 Chip coil 3 n Q=28/800M 0402
L551 3646091 Chip coil 6 n 5 % Q=27/800 MHz 0402
L552 3646047 Chip coil 3 n Q=28/800M 0402
L700 3646053 Chip coil 4 n Q=28/800M 0402
L701 3646053 Chip coil 4 n Q=28/800M 0402
L702 3646051 Chip coil 3 n Q=28/800M 0402
L703 3203743 Ferr.bead 0r03 42r/100mhz 3a 0805 0805
L704 3203715 Ferrite bead 0r35 240r/100m 0402 0402
L705 3646059 Chip coil 5 n Q=28/800M 0402
L708 3645065 Chip coil 5 n 10 % Q=98/1.5GHZ 0805
L750 4551015 Dir.coupler 897.5/1747.5/1880mhz
B200 4510303 Crystal 32.768 k +–20PPM 12.5PF
B301 5140211 Buzzer 85db3khz 3.0v 10.4x8.7x3. 10.4x8.7x3.1
G300 4700131 Cell capacitor 0.01mah 3v3
G650 4350243 Vco 3420–3840mhz 2.7v 20ma
G660 4510275 VCTCXO 26 M+–5PPM 2.7V GSM
F100 5119019 SM, fuse f 1.5a 32v 0603 1.0 1.000
Z260 3203741 Ferrite bead 0r5 600r/100mhz 0603 0603
Z261 3203741 Ferrite bead 0r5 600r/100mhz 0603 0603
Z262 3203741 Ferrite bead 0r5 600r/100mhz 0603 0603
Z263 3203741 Ferrite bead 0r5 600r/100mhz 0603 0603
Z264 3203741 Ferrite bead 0r5 600r/100mhz 0603 0603
Z265 3203741 Ferrite bead 0r5 600r/100mhz 0603 0603
Z301 4120031 Emi/esd filt emif10–1k010f1 bga24 BGA24
Z356 4550145 Cer filt 10.7+–0.03mhz 3.45x3.1 3.45x3.1
Z357 4550099 Cer.filt 10.7+–0.0225mhz 3.4x2.6 3.4x2.6
Z358 4550145 Cer filt 10.7+–0.03mhz 3.45x3.1 3.45x3.1
Z500 4512133 Ant.swit.880–960/1710–1990mhz 7x5 7X5
Z501 4511235 Saw filter 942.5+–17.5 M /3.8DB 3X3
Z520 4511093 Dual saw filt925–960/1805–1880mhz
Z551 4511241 Saw filter 1842.5+–37.5 M
Z700 4511237 Saw filter 897.5+–17.5 M /4.2DB 3X3
T650 3640423 Transf balun 3.7ghz+/–300mhz 0805 0805
T700 4550137 Transf balun 1.8ghz+/–100mhz2x1.3
V100 4113721 Trans. supr. 1PMT16AT3 16 V 175 W PWRMITE
V300 4219937 Transistor x 2 SOT363
V301 4219937 Transistor x 2 SOT363
V324 4864543 Led 4.0V
V325 4864543 Led 4.0V
V326 4864543 Led 4.0V
V327 4864543 Led 4.0V
V329 4110475 Schottky diode RB521S–30 35 V 200 mA SOD523
V350 4210043 Transistor DTC143ZE npn RB V EM3

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 Nokia Corporation

Page 9

NHM–7
Part lists LA5/LK5

V351 4860101 Irda tfdu5102 9k6–1m152 babyface BABYFACE
V356 4110931 Cap. diode x 2 BBY66–05 SOT23
V357 4110931 Cap. diode x 2 BBY66–05 SOT23
V500 4210277 Transistor SOT343
V550 4210261 Transistor SOT363
V750 4110079 Sch. diode x 2 HSMS282C 15 V SOT323
D200 4370805 Uem v4.4 w–dog ena to09h tfbga168 TFBGA168
D400 4370815 IC, v1.1 f741987a c05 ubga144 uPP8M
D450 4340835 IC, flash mem. FBGA40
N356 4341023 Am/fm receiver(tea5757)lqfp48
N600 4370731 Hagar 4 sttza8ig80t lfbga80 LFBGA80
N700 4350297 IC, pow.amp. 3.5V
S300 5200025 SM, tact sw side travel 0.2 mm
S301 5200025 SM, tact sw side travel 0.2 mm
S302 5200025 SM, tact sw side travel 0.2 mm
X101 5409141 SM, battery conn 4pol spr 12v 2a
X300 5409183 SM, lcd conn 1x8 p2.0 spr 50v 0. 0.5A
X303 5469135 SM, conn 2x8 spr 50v 0.5a pcb/pc PCB/PCB
X386 5409107 SM, sim conn 2x3pol p2.54 h=1.6m H=1.6MM

9854510 PWB LA5 36.0X90.9X1.0 M8 4/PA

PAMS Technical Documentation

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Issue 1 10/2001

NHM–7

PAMS Technical Documentation

Part lists LA5/LK5

Parts list of LA5 (EDMS Issue 12.0) Layout 17 Code: 0201510

ITEM CODE DESCRIPTION VALUE TYPE

R102 1430804 Chip resistor 100 k 5 % 0.063 W 6.000
R152 1430762 Chip resistor 2.2 k 5 % 0.063 W 3.000
R154 1430778 Chip resistor 10 k 5 % 0.063 W 8.000
R155 1430804 Chip resistor 100 k 5 % 0.063 W 6.000
R156 1620105 Res network 0w06 2x2k2 j 0404 0404
R157 1620105 Res network 0w06 2x2k2 j 0404 0404
R159 1825031 Varistor array 2xvwm16v vc50 0405 0405
R161 1825031 Varistor array 2xvwm16v vc50 0405 0405
R164 1620103 Res network 0w06 2x22r j 0404 0404
R165 1620103 Res network 0w06 2x22r j 0404 0404
R166 1430137 Chip resistor 1.0 k 1 % 0.063 W 0402
R167 1430137 Chip resistor 1.0 k 1 % 0.063 W 0402
R200 1419003 Chip resistor 0.22 5 % 1210
R202 1620067 Res network 0w06 4x100k j 0804 0804
R203 1620029 Res network 0w06 2x4k7 j 0404 0404
R301 1430770 Chip resistor 4.7 k 5 % 0.063 W 8.000
R304 1430700 Chip resistor 10 5 % 0.063 W 7.000
R305 1430744 Chip resistor 470 5 % 0.063 W 1.000
R306 1825033 Chip varistor vwm14v vc46v 0402 0402
R307 1430706 Chip resistor 15 5 % 0.063 W 1.000
R311 1430804 Chip resistor 100 k 5 % 0.063 W 6.000
R350 1419009 Chip resistor 4.7 5 % 1210
R352 1430804 Chip resistor 100 k 5 % 0.063 W 6.000
R358 1430778 Chip resistor 10 k 5 % 0.063 W 8.000
R359 1430722 Chip resistor 68 5 % 0.063 W 1.000
R360 1430802 Chip resistor 82 k 5 % 0.063 W 1.000
R361 1430762 Chip resistor 2.2 k 5 % 0.063 W 3.000
R362 1430770 Chip resistor 4.7 k 5 % 0.063 W 8.000
R363 1430778 Chip resistor 10 k 5 % 0.063 W 8.000
R364 1430804 Chip resistor 100 k 5 % 0.063 W 6.000
R365 1430778 Chip resistor 10 k 5 % 0.063 W 8.000
R369 1430796 Chip resistor 47 k 5 % 0.063 W 3.000
R370 1430796 Chip resistor 47 k 5 % 0.063 W 3.000
R371 1430778 Chip resistor 10 k 5 % 0.063 W 8.000
R380 1430796 Chip resistor 47 k 5 % 0.063 W 3.000
R381 1430804 Chip resistor 100 k 5 % 0.063 W 6.000
R388 4120071 Asip emif03–sim01 sim filter bga8 BGA8
R420 1430726 Chip resistor 100 5 % 0.063 W 3.000
R421 1430778 Chip resistor 10 k 5 % 0.063 W 8.000
R422 1430268 Chip resistor 27 k 1 % 0.063 W 0603
R423 1430778 Chip resistor 10 k 5 % 0.063 W 8.000
R450 1430770 Chip resistor 4.7 k 5 % 0.063 W 8.000
R500 1430726 Chip resistor 100 5 % 0.063 W 3.000
R501 1430700 Chip resistor 10 5 % 0.063 W 7.000
R502 1430846 Chip resistor 2.7 k 1 % 0.063 W 3.000

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 Nokia Corporation

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NHM–7
Part lists LA5/LK5

R550 1430740 Chip resistor 330 5 % 0.063 W 1.000
R551 1430700 Chip resistor 10 5 % 0.063 W 7.000
R558 1430846 Chip resistor 2.7 k 1 % 0.063 W 3.000
R600 1620081 Res network 0w03 4x22r j 0804 0804
R602 1430770 Chip resistor 4.7 k 5 % 0.063 W 8.000
R603 1430846 Chip resistor 2.7 k 1 % 0.063 W 3.000
R604 1430770 Chip resistor 4.7 k 5 % 0.063 W 8.000
R606 1430784 Chip resistor 15 k 5 % 0.063 W 1.000
R607 1620033 Res network 0w06 2x5k6 j 0404 0404
R608 1620033 Res network 0w06 2x5k6 j 0404 0404
R610 1430700 Chip resistor 10 5 % 0.063 W 7.000
R650 1430137 Chip resistor 1.0 k 1 % 0.063 W 0402
R651 1430907 Chip resistor 11 k 1 % 0.063 W 1.000
R652 1430700 Chip resistor 10 5 % 0.063 W 7.000
R660 1430762 Chip resistor 2.2 k 5 % 0.063 W 3.000
R661 1430774 Chip resistor 6.8 k 5 % 0.063 W 1.000
R700 1620121 Res network 0w06 2x220r j 0404 0404
R701 1620121 Res network 0w06 2x220r j 0404 0404
R703 1430714 Chip resistor 33 5 % 0.063 W 1.000
R704 1430718 Chip resistor 47 5 % 0.063 W 2.000
R705 1620515 Res network 0w04 1DB ATT 0400404
R706 1430693 Chip resistor 5.6 5 % 0.063 W 2.000
R707 1430693 Chip resistor 5.6 5 % 0.063 W 2.000
R709 1430734 Chip resistor 220 5 % 0.063 W 1.000
R751 1430770 Chip resistor 4.7 k 5 % 0.063 W 8.000
R752 1430788 Chip resistor 22 k 5 % 0.063 W 1.000
R753 1430770 Chip resistor 4.7 k 5 % 0.063 W 8.000
R754 1430726 Chip resistor 100 5 % 0.063 W 3.000
R755 1430718 Chip resistor 47 5 % 0.063 W 2.000
R756 1430770 Chip resistor 4.7 k 5 % 0.063 W 8.000
R757 1430778 Chip resistor 10 k 5 % 0.063 W 8.000
R780 1430700 Chip resistor 10 5 % 0.063 W 7.000
R781 1430700 Chip resistor 10 5 % 0.063 W 7.000
C100 2320744 Ceramic cap. 1.0 n 10 % 50 V 0402
C101 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C102 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C103 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C104 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C105 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C107 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C108 2320538 Ceramic cap. 12 p 5 % 50 V 0402
C109 2315201 Chip array np0 2x27p k 25v 0405 0405
C111 2315205 Chip array x5r 2x1n m 16v 0405 0405
C112 2320756 Ceramic cap. 3.3 n 10 % 50 V 0402
C113 2320756 Ceramic cap. 3.3 n 10 % 50 V 0402
C115 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C151 2315209 Chip array x5r 2x33n m 10v 0405 0405
C152 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C153 2315205 Chip array x5r 2x1n m 16v 0405 0405

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PAMS Technical Documentation

C154 2320744 Ceramic cap. 1.0 n 10 % 50 V 0402
C155 2315209 Chip array x5r 2x33n m 10v 0405 0405
C156 2320604 Ceramic cap. 18 p 5 % 50 V 0402
C157 2320481 Ceramic cap. 5R 1 u 10 % 0603
C158 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C160 2315203 Chip array x5r 2x10n m 16v 0405 0405
C161 2315213 Chip array np0 2x22p k 25v 0405 0405
C163 2315213 Chip array np0 2x22p k 25v 0405 0405
C165 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C166 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C168 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C201 2320481 Ceramic cap. 5R 1 u 10 % 0603
C202 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C203 2320481 Ceramic cap. 5R 1 u 10 % 0603
C204 2320481 Ceramic cap. 5R 1 u 10 % 0603
C205 2320481 Ceramic cap. 5R 1 u 10 % 0603
C206 2320481 Ceramic cap. 5R 1 u 10 % 0603
C207 2320481 Ceramic cap. 5R 1 u 10 % 0603
C208 2320481 Ceramic cap. 5R 1 u 10 % 0603
C209 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C210 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C211 2320481 Ceramic cap. 5R 1 u 10 % 0603
C212 2320481 Ceramic cap. 5R 1 u 10 % 0603
C213 2320481 Ceramic cap. 5R 1 u 10 % 0603
C214 2320481 Ceramic cap. 5R 1 u 10 % 0603
C215 2320481 Ceramic cap. 5R 1 u 10 % 0603
C218 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C219 2320481 Ceramic cap. 5R 1 u 10 % 0603
C221 2320481 Ceramic cap. 5R 1 u 10 % 0603
C222 2320481 Ceramic cap. 5R 1 u 10 % 0603
C223 2320481 Ceramic cap. 5R 1 u 10 % 0603
C224 2320481 Ceramic cap. 5R 1 u 10 % 0603
C225 2320481 Ceramic cap. 5R 1 u 10 % 0603
C226 2320481 Ceramic cap. 5R 1 u 10 % 0603
C227 2320481 Ceramic cap. 5R 1 u 10 % 0603
C228 2320481 Ceramic cap. 5R 1 u 10 % 0603
C229 2320481 Ceramic cap. 5R 1 u 10 % 0603
C230 2320481 Ceramic cap. 5R 1 u 10 % 0603
C231 2320481 Ceramic cap. 5R 1 u 10 % 0603
C232 2320481 Ceramic cap. 5R 1 u 10 % 0603
C233 2320481 Ceramic cap. 5R 1 u 10 % 0603
C234 2320481 Ceramic cap. 5R 1 u 10 % 0603
C235 2320481 Ceramic cap. 5R 1 u 10 % 0603
C236 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C237 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C238 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C239 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C240 2315203 Chip array x5r 2x10n m 16v 0405 0405
C241 2315203 Chip array x5r 2x10n m 16v 0405 0405

Part lists LA5/LK5

Issue 1 10/2001

 Nokia Corporation

Page 13

NHM–7
Part lists LA5/LK5

C242 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C243 2320481 Ceramic cap. 5R 1 u 10 % 0603
C250 2315213 Chip array np0 2x22p k 25v 0405 0405
C260 2320481 Ceramic cap. 5R 1 u 10 % 0603
C261 2320481 Ceramic cap. 5R 1 u 10 % 0603
C262 2320481 Ceramic cap. 5R 1 u 10 % 0603
C263 2320481 Ceramic cap. 5R 1 u 10 % 0603
C264 2320481 Ceramic cap. 5R 1 u 10 % 0603
C265 2320481 Ceramic cap. 5R 1 u 10 % 0603
C302 2320139 Ceramic cap. 1.0 u 10 % 10 V 0603
C303 2315211 Chip array x5r 2x100n y 10v 0405 0405
C306 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C307 2320604 Ceramic cap. 18 p 5 % 50 V 0402
C308 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C309 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C312 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C319 2320744 Ceramic cap. 1.0 n 10 % 50 V 0402
C320 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C350 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C351 2312243 Ceramic cap. 4.7 u 10 % 0805
C357 2310041 Ceramic cap. 1.5 u 10 % 10 V 0805
C358 2320520 Ceramic cap. 2.2 p 0.25 % 50 V 0402
C359 2320520 Ceramic cap. 2.2 p 0.25 % 50 V 0402
C360 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C361 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C362 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C363 2320481 Ceramic cap. 5R 1 u 10 % 0603
C364 2310793 Ceramic cap. 2.2 u 10 % 10 V 0805
C365 2320481 Ceramic cap. 5R 1 u 10 % 0603
C366 2320481 Ceramic cap. 5R 1 u 10 % 0603
C367 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C368 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C369 2320744 Ceramic cap. 1.0 n 10 % 50 V 0402
C370 2320137 Ceramic cap. 470 n 10 % 10 V 0603
C371 2320137 Ceramic cap. 470 n 10 % 10 V 0603
C372 2320598 Ceramic cap. 3.9 n 5 % 50 V 0402
C373 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C374 2320744 Ceramic cap. 1.0 n 10 % 50 V 0402
C375 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C378 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C389 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C400 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C401 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C402 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C403 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C404 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C405 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C420 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C421 2320560 Ceramic cap. 100 p 5 % 50 V 0402

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PAMS Technical Documentation

C422 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C450 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C451 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C454 2320779 Ceramic cap. 100 n 10 % 16 V 0603
C470 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C471 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C472 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C500 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C501 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C502 2320526 Ceramic cap. 3.9 p 0.25 % 50 V 0402
C503 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C504 2320779 Ceramic cap. 100 n 10 % 16 V 0603
C505 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C506 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C507 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C550 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C551 2320522 Ceramic cap. 2.7 p 0.25 % 50 V 0402
C552 2320516 Ceramic cap. 1.5 p 0.25 % 50 V 0402
C553 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C554 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C555 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C556 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C557 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C600 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C601 2320554 Ceramic cap. 56 p 5 % 50 V 0402
C602 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C603 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C604 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C605 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C608 2320783 Ceramic cap. 33 n 10 % 10 V 0402
C609 2320562 Ceramic cap. 120 p 5 % 50 V 0402
C610 2320562 Ceramic cap. 120 p 5 % 50 V 0402
C611 2320783 Ceramic cap. 33 n 10 % 10 V 0402
C612 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C613 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C615 2320558 Ceramic cap. 82 p 5 % 50 V 0402
C616 2320552 Ceramic cap. 47 p 5 % 50 V 0402
C617 2320552 Ceramic cap. 47 p 5 % 50 V 0402
C620 2320481 Ceramic cap. 5R 1 u 10 % 0603
C621 2320481 Ceramic cap. 5R 1 u 10 % 0603
C622 2320481 Ceramic cap. 5R 1 u 10 % 0603
C623 2320481 Ceramic cap. 5R 1 u 10 % 0603
C624 232R004 Ceramic cap. 470 p 5 % 16 V 0402
C625 232R004 Ceramic cap. 470 p 5 % 16 V 0402
C626 232R004 Ceramic cap. 470 p 5 % 16 V 0402
C627 232R004 Ceramic cap. 470 p 5 % 16 V 0402
C650 2320554 Ceramic cap. 56 p 5 % 50 V 0402
C652 2320564 Ceramic cap. 150 p 5 % 50 V 0402
C653 2322015 Ceramic cap. 2.2 n 2 % 16 V 0603

Part lists LA5/LK5

Issue 1 10/2001

 Nokia Corporation

Page 15

NHM–7
Part lists LA5/LK5

C654 2320564 Ceramic cap. 150 p 5 % 50 V 0402
C655 2320481 Ceramic cap. 5R 1 u 10 % 0603
C657 2320520 Ceramic cap. 2.2 p 0.25 % 50 V 0402
C660 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C661 2320805 Ceramic cap. 100 n 10 % 10 V 0402
C662 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C699 2320518 Ceramic cap. 1.8 p 0.25 % 50 V 0402
C701 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C702 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C703 2320554 Ceramic cap. 56 p 5 % 50 V 0402
C704 2320516 Ceramic cap. 1.5 p 0.25 % 50 V 0402
C705 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C706 2320604 Ceramic cap. 18 p 5 % 50 V 0402
C707 2320518 Ceramic cap. 1.8 p 0.25 % 50 V 0402
C708 2611753 Tantalum cap. 33 u 20 % 16/8 V 6.0x3.2x1.5
C709 2312243 Ceramic cap. 4.7 u 10 % 0805
C710 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C711 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C712 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C713 2320540 Ceramic cap. 15 p 5 % 50 V 0402
C714 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C715 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C716 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C717 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C718 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C719 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C720 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C721 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C722 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C723 2320744 Ceramic cap. 1.0 n 10 % 50 V 0402
C724 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C726 2320508 Ceramic cap. 1.0 p 0.25 % 50 V 0402
C727 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C728 2320778 Ceramic cap. 10 n 10 % 16 V 0402
C729 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C731 2320524 Ceramic cap. 3.3 p 0.25 % 50 V 0402
C751 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C752 2322023 Ceramic cap. 2.2 n 5 % 16 V 0603
C753 2320538 Ceramic cap. 12 p 5 % 50 V 0402
C754 2320538 Ceramic cap. 12 p 5 % 50 V 0402
C756 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C759 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C780 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C781 2320548 Ceramic cap. 33 p 5 % 50 V 0402
L100 3203743 Ferr.bead 0r03 42r/100mhz 3a 0805 0805
L101 3645343 Chip coil 150 n 5 % Q=28/150 MHz 0603
L104 3203801 Chip bead array 2x1000r 0405 0405
L105 3203725 Ferrite bead 600r/100mhz 0402 0402
L106 3203725 Ferrite bead 600r/100mhz 0402 0402

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NHM–7

PAMS Technical Documentation

L107 3203725 Ferrite bead 600r/100mhz 0402 0402
L151 3203801 Chip bead array 2x1000r 0405 0405
L356 3645327 Chip coil 72 n 2 % Q=34/150 MHz 0603
L357 3645207 Chip coil 56 n 2 % Q=38/200 MHz 0603
L470 3203725 Ferrite bead 600r/100mhz 0402 0402
L471 3203725 Ferrite bead 600r/100mhz 0402 0402
L472 3203725 Ferrite bead 600r/100mhz 0402 0402
L500 3646091 Chip coil 6 n 5 % Q=27/800 MHz 0402
L501 3646067 Chip coil 18 n 5 % Q=29/800 MHz 0402
L502 3646091 Chip coil 6 n 5 % Q=27/800 MHz 0402
L503 3646065 Chip coil 12 n 5 % Q=31/800 MHz 0402
L550 3646051 Chip coil 3 n Q=28/800M 0402
L551 3646091 Chip coil 6 n 5 % Q=27/800 MHz 0402
L552 3646047 Chip coil 3 n Q=28/800M 0402
L700 3646053 Chip coil 4 n Q=28/800M 0402
L701 3646053 Chip coil 4 n Q=28/800M 0402
L702 3646051 Chip coil 3 n Q=28/800M 0402
L703 3203743 Ferr.bead 0r03 42r/100mhz 3a 0805 0805
L704 3203715 Ferrite bead 0r35 240r/100m 0402 0402
L705 3646059 Chip coil 5 n Q=28/800M 0402
L708 3645065 Chip coil 5 n 10 % Q=98/1.5GHZ 0805
L750 4551015 Dir.coupler 897.5/1747.5/1880mhz
B200 4510303 Crystal 32.768 k +–20PPM 12.5PF
B301 5140211 Buzzer 85db3khz 3.0v 10.4x8.7x3. 10.4x8.7x3.1
G300 4700131 Cell capacitor 0.01mah 3v3
G650 4350243 Vco 3420–3840mhz 2.7v 20ma
G660 4510275 VCTCXO 26 M +–5PPM 2.7V GSM
F100 5119019 SM, fuse f 1.5a 32v 0603 1.0 1.000
Z260 3203741 Ferrite bead 0r5 600r/100mhz 0603 0603
Z261 3203741 Ferrite bead 0r5 600r/100mhz 0603 0603
Z262 3203741 Ferrite bead 0r5 600r/100mhz 0603 0603
Z263 3203741 Ferrite bead 0r5 600r/100mhz 0603 0603
Z264 3203741 Ferrite bead 0r5 600r/100mhz 0603 0603
Z265 3203741 Ferrite bead 0r5 600r/100mhz 0603 0603
Z301 4120031 Emi/esd filt emif10–1k010f1 bga24 BGA24
Z356 4550145 Cer filt 10.7+–0.03mhz 3.45x3.1 3.45x3.1
Z357 4550099 Cer.filt 10.7+–0.0225mhz 3.4x2.6 3.4x2.6
Z358 4550145 Cer filt 10.7+–0.03mhz 3.45x3.1 3.45x3.1
Z500 4512133 Ant.swit.880–960/1710–1990mhz 7x5 7X5
Z501 4511235 Saw filter 942.5+–17.5 M /3.8DB 3X3
Z520 4511093 Dual saw filt925–960/1805–1880mhz
Z551 4511241 Saw filter 1842.5+–37.5 M
Z700 4511237 Saw filter 897.5+–17.5 M /4.2DB 3X3
T650 3640423 Transf balun 3.7ghz+/–300mhz 0805 0805
T700 4550137 Transf balun 1.8ghz+/–100mhz2x1.3
V100 4113721 Trans. supr. 1PMT16AT3 16 V 175 W PWRMITE
V300 4219937 Transistor x 2 SOT363
V301 4219937 Transistor x 2 SOT363
V324 4864543 Led 4.0V

Part lists LA5/LK5

Issue 1 10/2001

 Nokia Corporation

Page 17

NHM–7
Part lists LA5/LK5

V325 4864543 Led 4.0V
V326 4864543 Led 4.0V
V327 4864543 Led 4.0V
V329 4110475 Schottky diode RB521S–30 35 V 200 mA SOD523
V350 4210043 Transistor DTC143ZE npn RB V EM3
V351 4860101 Irda tfdu5102 9k6–1m152 babyface BABYFACE
V356 4110931 Cap. diode x 2 BBY66–05 SOT23
V357 4110931 Cap. diode x 2 BBY66–05 SOT23
V500 4210277 Transistor SOT343
V550 4210261 Transistor SOT363
V750 4110079 Sch. diode x 2 HSMS282C 15 V SOT323
D200 4370805 Uem v4.3 w–dog ena to09h tfbga168 TFBGA168
D400 4370815 IC, v1.1 f741987a c05 ubga144 uPP8M
D450 4340835 IC, flash mem. FBGA40
N356 4341023 Am/fm receiver(tea5757)lqfp48
N600 4370731 Hagar 4 sttza8ig80t lfbga80 LFBGA80
N700 4350297 IC, pow.amp. 3.5V
S300 5200025 SM, tact sw side travel 0.2 mm
S301 5200025 SM, tact sw side travel 0.2 mm
S302 5200025 SM, tact sw side travel 0.2 mm
X101 5409141 SM, battery conn 4pol spr 12v 2a
X300 5409183 SM, lcd conn 1x8 p2.0 spr 50v 0. 0.5A
X303 5469135 SM, conn 2x8 spr 50v 0.5a pcb/pc PCB/PCB
X386 5409107 SM, sim conn 2x3pol p2.54 h=1.6m H=1.6MM

9854510 PWB LA5 36.0X90.9X1.0 M8 4/PA

PAMS Technical Documentation

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Issue 1 10/2001

PAMS Technical Documentation

Part lists LA5/LK5

Parts list of LK5 (EDMS Issue 3.1) Layout 11 Code: 0201511

ITEM CODE DESCRIPTION VALUE TYPE

V101 4864571 Led 0603
V102 4864571 Led 0603
V103 4864571 Led 0603
V104 4864571 Led 0603
V105 4864571 Led 0603
V106 4864571 Led 0603

9854511 PCB LK5 44.95X35.0X0.8 M4 8/PA

NHM–7

Issue 1 10/2001

 Nokia Corporation

Page 19

NHM–7
Part lists LA5/LK5

PAMS Technical Documentation

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Page 20

 Nokia Corporation

Issue 1 10/2001

Customer Care Europe & Africa NHM-7 / NPM-9 Repairhints
SCCE Training Group Version 2.0 Approved

 2002 Nokia Mobile Phones

CONFIDENTIAL

Date 13.05.2002

1 (20)

Repairhints

Service-Level 3 & 4

8310/6510

NHM-7/NPM-9

© NMP 2002

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GENERAL

-How to use this document

Put the colored schematics behind this manual. Now you are able to follow the signalpathes with graphical layout and it is easier
for you to find the components and measuring points.

-about Phoenix

When changing the phone mode with Phoenix, note that it is not possible to activate local mode directly from normal mode –
change to test mode first! In normal mode the phone works as it would be supplied by the normal phone battery. In local mode
the watchdog is disabled while in test mode only MCU-software is working without loading the PPM-file.
Using JBV-1 it is possible to change to local mode by suppling JBV-1 with +12VDC. If JBV-1 is supplied with +4VDC you have to
change the phone mode manually with Phoenix.
When using service jig MJS-46 take care not to supply more than +12VDC – the jig will surely be damaged!
Always ensure that you are using Phoenix with the matching datapackage (see also next page). Further more ensure that the
phone software corresponds to the used datapackage, otherwise Rx Channel Select Filter Calibration will not be possible.

-Component characteristics

Some components contain important data.
Several described steps are only practicable if you are able to reflash/ realign the phone and/or rewrite IMEI/SIMlock in certain
cases. Please pay attention to separate notes.

-Broken balls, µBGA

All replaceable µBGA-components must be renewed after removing. Reflow with hot air fan is strictly forbidden!
Check soldering points, remove oxidated solderings (broken balls) carefully by enclosing few new solder before placing new
components.
µBGA must be soldered only with NMP approved µBGA-rework machines (e.g. Zevac/OK International).
Only use recommended Fluxtype and an appropriate amount of it.

-PCB handling & cleaning

To avoid damages of PCB and/or components through electrostatic discharging, handle the module in
ESD-suitable cases only. Always wear ESD-bracelets, which must be connected to earth bonding point.
Don´t make any loose wiring connections or do some other unqualified rework anywhere.
For cleaning use appropriate materials only, do not use scratching or rubbing tools.
Because of organic surface protection (OSP), cleaning must only be done with a lint-free cloth which may be moisten with DI­water. IPA or other solvent like ethanol should only be used to clean gold pads for spring contacts without affecting the
surrounding copper layers.

-Realign after repair

Characteristics of replacement parts are different.
To prevent additional faults after repair (eg. low standby time, loosing network etc.) it is necessary to retune phone values
after repair, but never try to cover a fault by tuning it out!

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INTRODUCTION

IMPORTANT:

This document is intended for use by authorized NOKIA service centers only.

The purpose of this document is to provide some further service information for NOKIA 8310 and 6510 phones.
It contains a lot of collected tips and hints to find failures and repair solutions easily.
It also will give support to the inexperienced technicians.
Saving process time and improving the repair quality is the aim of using this document.
We have built it up based on fault symptoms (listed in "Contents") followed by detailed description for further analysis.
It is to be used additionally to the service manual and other service information like Service Bulletins. For that reason it does
not contain any circuit descriptions or schematics.

All measurements are made using following equipment:

Nokia repair SW : Phoenix version 03.60.00

Data package : 6.00 for 8310, 4.00 for 6510

Nokia module jig : MJS-46

Digital multimeter : Fluke 73

Oscilloscope : Fluke PM 3380A/B

Spectrum Analyzer : Advantest R3162 with an analogue probe

RF-Generator / GSM Tester : Rohde & Schwarz CMU 200

While every endeavour has been made to ensure the accuracy of this document, some errors may exist. If any errors are found by
the reader, NOKIA should be notified in writing, using following procedure:

Please state:

Title of the Document + Issue Number/Date of publication.
Page(s) and/or Figure(s) in error.

Please send to: Nokia GmbH

Service & Competence Center Europe
Meesmannstr.103
D-44807 Bochum / Germany

Copyright © Nokia Mobile Phones.
This material, including documentation and any related computer programs, is protected by copyright, controlled by Nokia Mobile
Phones. All rights are reserved. Copying, including reproducing, modifying, storing, adapting or translating, any or all of this
material requires the prior written consent of Nokia Mobile Phones. This material also contains confidential information, which
may not be disclosed to others without the prior written consent of Nokia Mobile Phones.

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Contents

PREFACE 2

General 2
Introduction 3

CHAPTER 1 PHONE DOES NOT SWITCH ON 5

CHAPTER 2 PHONE SWITCHES ITSELF OFF 8

CHAPTER 3 FLASH UPDATE NOT POSSIBLE 9

CHAPTER 4 CONTACT SERVICE FAULTS 10

CHAPTER 5 SIMCARD FAULTS 11

CHAPTER 6 AUDIO FAULTS 12

CHAPTER 7 CHARGING FAULTS 13

CHAPTER 8 USER INTERFACE FAULTS 14

CHAPTER 9 NO SERVICE 15

CHANGE HISTORY 20

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CHAPTER 1 PHONE DOES NOT SWITCH ON

Phone does not switch on

Check if

current consumption

is higher than

1 Ampere

no

yes

Usually N700 faulty

(remove L703 to ensure)

check if

current consumption

is around 15mA

(in Servicejig supplied with

4VDC)

no

check VBATT

4VDC at both sides of Z260-

Z265

OK

check 32.768kHz

at C209/210

OK

check that

PWRONX decreases to 0V if

powerswitch is pressed

OK

check that

VIO, VCORE, VANA, VFLASH1

and VR3 rise to their intended

values

nOK

nOK

yes

nOK

nOK

Try to make SW-update,

continue with section

"Flash update not possible" if

not ok

Check X101, also check

resistance of Z260-Z265

(0 Ohm)

change B200,

also check C209/210.

Probably D200 faulty

check / change

S300, R301

check lines for shorts to ground

or interruption, change UPP if

necessary

© NMP 2002

OK

check 13MHz reference clock at

R420

OK

Check PURX 1.8VDC at J402

Try to flash the phone.

If SW-update does not work,

continue with chapter

"Flash update not possible"

Checked by:

nOK

nOK

SCCE Training Group

Check / change

G660, N600

UEM D200 faulty in all

probability

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X101

- check mechanical appearance of battery connector. Change part if it is bent, soiled or corroded.

S300

- check mechanical appearance of powerswitch, change if necessary.

- check voltage at S300, 3.8VDC in case that switch is not pressed. If voltage is not measureable or too low especially check

R301 and C312.

- if switch is pressed, voltage at S300 must decrease to 0V. Change switch if necessary.

B200

- check DC-voltages at C209 and C210, normally 0.5VDC. If voltages are not ok check C209/210 for shorts to ground. It also
is possible that UEM D200 is defect.

- if DC-voltages are ok but no 32.768kHz signal is measurable at C209/210 change the crystal B200.
Note that this signal must be always measurable if battery voltage is higher than 3.1VDC, even if phone is switched off! In
this case amplitude of 32.768kHz is a bit lower (700mVpp at C209, 550mVpp at C210).

D200

- check that output voltage lines of UEM rises to their supposed values (VIO 1.8VDC at C207, VCORE 1.8VDC at C208,
VANA 2.8VDC at C206 and VR3 2.8VDC at C227) after pressing the powerbutton. If no voltage is measurable at the different
capacitors, check VBATT 4VDC at Z260/261/262/263/264/265. Also ensure that PWRONX-line is ok and SLEEPCLK-oscillator
works properly. If only a single voltage line does not rise to its supposed value, check this line for shorts to ground. Probably
it is necessary to change the UEM. Note that you have to rewrite IMEI and SIMlock data after changing this part!
If all voltages are ok but phone does not switch on, try to flash the phone. In case of any failuremessage during flashing
continue with the corresponding chapter on page 9.

D400

- check signals which are necessary for a working UPP such as VIO, VCORE, RFCLK, SLEEPCLK and PURX. If signals are ok
try to flash the phone. In case of any failuremessage during flashing continue with the corresponding chapter on page 9.
If flashing works but the phone still does not switch on, change UPP and reflash the phone once more.

D450

- in case that phone does not switch on while current consumption stays on 15mA (in Service jig supplied with 4VDC) this
indicates that Flash D450 probably is empty. Try to make SW-update. If any failuremessage appears during flashing, try
SW-update a second time. It also can be necessary to change D450. Note that in this case you have to rewrite IMEI,
SIMlockdata and Product code, furthermore you have to run all RX/TX-tunings and energy management calibration!

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G660

- check voltage at C662, 2.8VDC

- check signal of 26MHz reference oscillator at C660:

With the voltage of 2.8VDC at C662 the oscillator
must be able to work on a frequency around 26MHz, else
you have to change G660.

N700

- in case you suppose a defect poweramplifier N700 to be responsible for the fault, first of all check the current consumption
of the phone. If current rises to more than 1 Ampere directly after connecting the phone to the servicebattery, remove
coil L703 and check current consumption again. If current is ok now you have to change poweramplifier N700 with help of
µBGA soldering machine and LGA rework kit LRK-1.

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CHAPTER 2 PHONE SWITCHES OFF ITSELF

If this fault appears ensure that switching-off symptom is not the result of a too old phone software-version. SW-version
should be 5.06 or newer!
Also check that symptom is not caused by an insufficient charged battery. In case of doubt retest the phone with a new or
well charged battery. If this does not solve the problem, check the following:

- check mechanical appearance of battery connector X101. Change part if spring contacts are bent, soiled or corroded.

- check amplitude and frequency of 32.768kHz sleepclock-signal at J404, 1.9Vpp:

- check amplitude and frequency of 13MHz system clock at R420, 320mVpp:

- try to calibrate TX-powerlevels. It is possible that poweramplifier N700 is defect so that the phone switches off if you try

to tune the upper powerlevels because of too high current consumption.

- check solderings and resistance of R102 (100kΩ). It has been observed that solderings of this part were responsible for this

fault in some cases, especially if phone switches off or resets after some minutes to some hours.

- it has been seen that in some cases UPP D400 was responsible for the mentioned fault. Remember that it is necessary
to make SW-update after changing UPP, otherwise the phone will not switch on!

In case that phone switches off itself repeatedly after 30 seconds, this could be the result of a changed Flash D450 or UEM D200.
Because of the data mismatch between both parts the watchdog will not be reset and the phone switches itself off.

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CHAPTER 3 FLASH UPDATE NOT POSSIBLE

D200

- remember that you have to rewrite IMEI and SIMlock data after changing UEM D200!

D400

- if it was necessary to change UPP D400 you have to make SW-update after reworking this part. Otherwise the phone will
not switch on!

D450

- change Flash D450 in case that prommer box messages “wrong manufactor / device ID”. Note that after changing D450 you
have to flash the phone, rewrite IMEI, SIMlockdata and Product code. Furthermore you have to run all RX/TX-tunings and
energy management calibration!

Flash update not possible

check that

signals which are necessary

for a working baseband

(voltages, sleepclock,

referenceclock, PURX)

are ok

OK

check that

FBUS_TXO-line rise

to 2.8VDC after start

flashing

OK

If failuremessage from prommer

is "wrong manufactor/ device ID"

update prommerbox or change

Flash D450

nOK

nOK

nOK

change UPP D400

continue with section

"Phone does not switch on"

check pulse on

BSI-line (J101) after

start flashing

OK

check voltage at

J411 (1.8VDC)

OK

nOK

nOK

FBUS TXO

FBUS RXO

check components in

BSI-line

check R102. Probably

UEM D200 faulty

MBUS

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CHAPTER 4 CONTACT SERVICE FAULTS

With most of the selftests below it is possible to check the functionality of the lines between the several µBGAs, especially
between UPP and UEM. If it was necessary to change UPP, remember to flash the phone, otherwise it will not switch on.
In case that it was necessary to change the UEM, remember to rewrite IMEI and SIMlock data!

ST_PPM_VALIDITY_TEST

Usually this fault can be removed by making software-update to the latest version of MCU-software. In some cases it also
can be necessary to change Flash D450.
Keep in mind instruction for changing Flash as described in NHM-7 Service-Bulletin 20!

ST_SIM_LOCK_TEST
In case of this fault first thing to do is performing software-update to the latest MCU-software. After that you have to rewrite
SIMlock-data as described in NHM-7 SB 20.

ST_RF_CHIP_ID_TEST
This test checks that the ID-register of Hagar can be read and whether it contains reasonable value. Usually this is done by UPP
via RF-bus. In most cases the RF-Chip itself is responsible for the fault but it also is possible that UPP or PCB is faulty.

ST_FLASH_CHECKSUM_TEST
This selftest calculates the checksum over Flash ROM areas which then is compared to precalculated checksum in Flash header.
If checksums are the same selftest is ok, otherwise the selftest fails. In this case change Flash D450.

ST_SIM_CLK_LOOP_TEST

This function tests the connection of SIMCLK and SIMIODATA signals beetween UPP and UEM. This test also requires that
SIMIOCTRL-signal can be set to high state. If lines are ok the result is ST_OK, if there is an interruption the result is
ST_NO_SIGNAL and if the lines have short circuit to ground the result is ST_SHORT_CIRCUIT.

ST_SIM_IO_CTRL_LOOP_TEST

This selftest checks the connection of SIMIOCTRL and SIMIODATA lines between UPP and UEM. This test also requires that
SIMCLK signal state can be switched. If the lines are ok the result is ST_OK, in case the lines are interrupted the result is
ST_NO_SIGNAL.

ST_SLEEPX_LOOP_TEST

With this selftest the connection of SLEEPX and SLEEPCLK-lines between UPP and UEM can be checked. UEM_V2 or later
required! If the lines are ok the result is ST_OK, if there is no connection the result is ST_NO_SIGNAL.

ST_TX_IDP_LOOP_TEST

This function checks the connection of TXIDP and RXIDP signals between UPP and UEM (only supported with UEM_V2 or later).
If lines are ok the result is ST_OK, in case the lines are interrupted the result is ST_NO_SIGNAL and if the lines are short circuited
to ground the result is ST_SHORT_CIRCUIT.

ST_TX_IQ_DP_LOOP_TEST

This selftest checks the TXQDP and RXQDP-lines between UPP and UEM (also here UEM_V2 or later required). If lines are ok the
result is ST_OK, in case the lines are interrupted the result is ST_NO_SIGNAL and if the lines are short circuited to ground the
result is ST_SHORT_CIRCUIT.

ST_MBUS_RX_TX_LOOP_TEST
With this selftest the connection of MBUSRX and MBUSTX-lines between UPP and UEM can be checked. If connections are ok the
result is ST_OK, if there is an interruption the result is ST_NO_SIGNAL.

ST_EAR_DATA_LOOP_TEST
This function checks the connection of MICDATA and EARDATA-signals between UPP and UEM. In case the lines are ok the result
is ST_OK, if the lines are interrupted the result is ST_NO_SIGNAL and if the lines are short circuited to ground the result is
ST_SHORT_CIRCUIT.

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CHAPTER 5 SIMCARD-FAULTS

Display message
"Insert SIM card"

Check at

SIM reader pin 1-4

if pulsed to

1.8V/3Vpp

nok

Check SIM lines for

shorts to GND

nok

Check / change EMI-filter

R388, C203 and C389

ok

ok

Check SIM card if dirty, check

mechanical appearance of SIM reader

and SIM cover, change parts if

necessary

Check / change R388, D200 or D400.

If this does not solve the problem

PCB is faulty in all probability

X386
In case that phone messages “Insert SIM card” on LCD, first of all check mechanical appearance of SIMcardreader X386. If
contact springs are bent, soiled or corroded you have to change the SIMreader.

R388/D200/D400
If mechanical appearance of SIMreader seems to be ok but fault persists, check with an oscilloscope if SIMlines at SIMreader
pin 1-4 are pulsed to 1.8Vpp / 3Vpp after switching on the phone as shown in the chart below. Signals are slightly different
between pin 1-4 but the amplitude always is 1.8Vpp / 3Vpp.

VSIM (1)

GND (6)

SIMReset (2)

n.c. (5)

In case that the above mentioned signal is not measurable at one or more SIM lines, check SIM lines for shorts to ground.

Resistance of SIMdata- and VSIMline normally is > 200kΩ, resistance of SIM reset- and SIM clock line normally is ~ 4.5MΩ.

If resistance of any line is not ok check parts the SIM lines consists of (R388, C203, C389).
In case that resistance of all lines is ok but fault persists, EMI-filter R388 may have internal interruption. Change part and retest
the phone. It also is possible that UEM D200 or UPP D400 are responsible for this fault. Remember that it is necessary to flash
the phone after changing UPP as it is necessary to rewrite IMEI and SIMlock data after changing UEM!

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CHAPTER 6 AUDIO-FAULTS

In case of any audiofault in the phone, the best way to define the fault is to make a call with the defect phone to a proper
working one. In case that you can hear the speech of the proper working phone in the defect one but the other way round the
speech of the defect phone is not audible in the proper working phone you know that the internal microphones signalpath is
responsible for the fault.
Of course you can use the same procedure to check the external audiopathes XMIC and XEAR.

internal audio
does not work

int. micro faulty

int. speaker faulty

change microphone,

retest phone

change speaker,

retest phone

nOK

nOK

check speaker lines for shorts

to GND and interruption.

Probably D200 faulty

check MicBias

2.1VDC

at R152 on active

micro

OK

nOK

check/change R152,

C166/168.

Probably D200 faulty

check MIC1N/P for shorts to GND
and interruption, especially check

C151! Probably D200 faulty

I009 bottomconnector

- check mechanical appearance of bottomconnector I009 in case that internal microphone does not work, external audiopath
seems to be interrupted or headset is not recognized. Retest phone with new connector in case of doubt.
Also ensure that contact pads for connector on PCB are clean.

I005 speaker

- check mechanical appearance of speaker. Change part if spring contacts are bent or soiled. Resistance of speaker normally

is 30Ω. Also ensure that contact pads on PCB are clean.

C151/C155

- check resistance of the double capacitors, which normally is > 20MΩ. Both parts have tendencies to leak and often are

responsible for missing uplink audio (C151 in case of internal -, C155 in case of external audio faults).

D200

- in case that you suppose a faulty UEM D200 to be responsible for the audio-fault, do not forget to rewrite IMEI and
SIMlock data after rework of this part!

Audio-Faults

ext. speaker faulty

change headset/

bottomconnector,

retest phone

nOK

check XEAR-lines for shorts to

GND and interruption.

Probably D200 faulty

check/change R166, C165.

Probably D200 faulty

external audio
does not work

nOK

ext. micro faulty

change headset/

bottomconnector,

retest phone

nOK

check MicBias

2.7VDC

at R166 on active

micro

OK

check XMIC-lines for shorts to
GND and interruption, especially
check C155! Probably D200 faulty

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CHAPTER 7 CHARGING FAULTS

Charging not possible

Battery size failed

check BSI-line for shorts to

GND, check C241/R203 or

change X101

Battery temperature failed

check BTEMP-line for
shorts to GND, check
C240 or change X101

Run energy

management

calibration

nOK

Battery voltage failed Charge current failedCharge voltage failed

UEM D200 faulty
in all probability

OK

Try to charge after

calibration

check / change X100,

F100, L100 and V100.
Probably D200 faulty

check resistance of

R200 (0.22 Ohm).

Probably D200 faulty

First thing you should do in case that charging of battery is not possible is to run energy management calibration. Note
that calibration only works with JBV-1. In Service jig it is not possible because of missing bottom connector I009.

Also check whether charging is only from time to time not possible or if charging does not work permanently. In case
that fault appears from time to time only, especially check spring contacts of bottom connector I009 and battery connector
X101 if bent, soiled or corroded. Also make sure that contact pads for bottom connector on PCB are clean. If necessary
clean PCB with an appropriate amount of alcohol. Do not use any scratching or rubbing tools!

To ensure function of the phone run energy management calibration whenever a part has been changed in the charging
circuit!

I009, X101

- check mechanical appearance of battery connector and bottom connector, change parts if bent, soiled or corroded.
also ensure that contact pads for bottom connector on PCB are clean.

F100

- check resistance of fuse, must be 0Ω

C241

- perform energy management calibration. AD-value for battery size normally is ~ 1000. If you get no reasonable value for

BSI, check resistance of BSI-line to ground, which normally is around 600kΩ. In most cases C241 is responsible if resistance

is too low.

V100

- check that V100 does not cause a short circuit to ground. Resistance of VCHAR-line to ground normally is ~ 2.8kΩ

D200

- if you have change UEM D200 to repair the charging fault, remember that it is necessary to rewrite IMEI and SIMlock data
after rework of this part.

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CHAPTER 8 USER INTERFACE FAULTS

Display faulty

- change displaymodule I004 to check if it is responsible for the fault

- check mechanical appearance of displayconnector X300, change part if necessary

- if fault persists check VIO 1.8VDC and VFLASH1 2.8VDC, both measurable at double capacitor C303

also check VOUT 8.1VDC at C301/302 which is generated by the displaymodule.

- If DC-voltages are ok but display does not work, probably UPP D400 faulty.
Note that you have to make SW-update after changing UPP, otherwise the phone will not switch on!

Display- and keyboardillumination faulty

- check VBAT 4VDC at R304 and R307

- check that voltage at V300/301 pin 5/6 decreases from 3.5VDC to 3VDC if illumination gets active, check R305 (470Ω) or

change V300/301 if necessary.
It also is possible that UEM D200 is faulty. Remember to rewrite IMEI and SIMlock data after changing this part!

- in case of faulty keyboardillumination also check mechanical appearance and solderings of board to board connector
X303

Buzzer faulty

- ensure that fault is no result of too old phonesoftware. SW-version should be 5.06 or newer.

- if SW-update does not solve the problem, activate buzzer with Phoenix in menu “Maintenance/Testing/Audio Test”.

Check VBAT 4VDC and PWM-signal coming from UEM at buzzer, change buzzer if necessary

- it also is possible that UEM D200 is defect. Remember to rewrite IMEI and SIMlock data after changing this part!

Vibramotor faulty

- as in case of faulty buzzer ensure that fault is not the result of too old phonesoftware, make SW-update if necessary

- check spring contacts of vibramotor if bent or soiled, change vibramotor if necessary

- if fault persists UEM D200 faulty in all probability. Remember to rewrite IMEI and SIMlock data after changing this part!

Keyboard faulty

- if only a single key does not work displaymodule I004 is faulty in all probability. Exchange displaymodule and retest the
phone

- in case that a whole row or column of keys (e.g. 2-5-8-0) does not work this also may be caused by a defect displaymodule,
but it is more likely that EMI-filter Z301 interrupts the keyboardlines or UPP D400 is faulty. Also check solderings and
mechanical appearance of board to board connector X303, change part if necessary.
Note that you have to flash the phone after changing UPP, otherwise the phone will not switch on!

GND

VBAT

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CHAPTER 9 NO SERVICE

In case that this fault occurs with your phone, the first thing you should do is to calibrate RX/TX-values of the phone. If for
example TX-power is not measurable or too low, continue with the chapter below. If the receiver does not work, continue with
the corresponding chapter on page 17. If RX and TX do not work check parts which are needed for both signalpathes (e.g.
oscillators G650/660, Hagar N600 or UPP D400).

No or too low TX-power

GSM 1800 GSM 900

OK OK

Check

1747.8MHz at
L702

OK

Check

1747.8MHz at
R705

OK

Check

1747.8MHz at
L750 pin3

OK

Check

1747.8MHz at

J501

nOK nOK

nOK

nOK nOK

VR3 2.8VDC at C602/662; VR4 2.8VDC at C601; VR5 2.8VDC at C603;

VR6 2.8VDC at C605; VREFRF_1 1.35VDC at C613;VREFRF_2 1.35VDC at

C612; RFBUSDA at J2; RFBUSCLK at J3; RFBUSEN1 at J4; TXC at C615.

Check SHF oscillator at T650 pin3/4 (GSM900 TX Ch.37: 3589.6MHz,

If signals are ok but no TX-signal is measurable at C700/726, change

Check/change

T700, R705, C705

Check/change

N700

Ckeck L750/Z500 in

& out, also check

No or too low

TX-power

Use Phoenix to set phone into

TX-burstmode (GSM900

Ch.37, GSM1800 Ch.700).

Check 26MHz

REFCLK at C660,

frequency deviation

<100Hz

OK

Check

TX/IQ signals at both

sides of C616/617

OK

Check signals for HAGAR N600:

VR1A 4.75VDC at C600; VR2 2.8VDC at C723;

GSM1800 TX Ch.700: 3495.6MHz)

HAGAR N600. Probably UPP D400 faulty

Check/change Z700,
R706/707, C701/702

Check C731 or

Ckeck L750/Z500 in

C717

nOK

nOK

change N700

& out, also check

C716

Check VR3 2.8VDC at C662,

also check AFC-voltage at C661,

normally 1.25VDC.

Change G660 if frequency deviation

nOK

is >100Hz.

check R607/608,

probably UEM D200 faulty

Check

897.4MHz at
C726

OK

Check

897.4MHz at
C704

OK

Check

897.4MHz at

L750 pin1

OK

Check

897.4MHz at

nOKnOK

J501

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Date 13.05.2002

G660

- set phone with Phoenix on local mode

- check VR3 2.8VDC at C662. With only this voltage the oscillator must be able to work on a frequency of 26MHz,

Otherwise you have to change G660. Check signal at C660:

AFC-voltage at C661 normally is 1.25VDC, but may vary between

0.05VDC and 2.5VDC.
If frequency deviation of G660 is >100Hz it is necessary to
change the oscillator!

G650, C653

- to check if the SHF-oscillator G650 is working you have to activate with Phoenix e.g. TX-burstmode Ch.37. After that
check signal (3589.6MHz) at T650 pin 3 and 4 as shown below:

If no signal is measurable at T650 check VR7 2.6VDC at C650. If OK, set span of your analyser to e.g. 250MHz to check if the
oscillator works on any other frequency as on the supposed. If this is the case check control voltage at C652 which normally
is 2.1VDC on channel 37. In case of noise on the control voltage especially check C653 (tendency to leak).
If the oscillator does not work at all, change G650 and retest the phone.

N700

- set phone with Phoenix to local mode and activate TX-burstmode Ch.37 (Ch.700 for GSM1800). Data in parethesis are
mentioned for GSM1800.

- check VBATTRF 3.9VDC on both sides of L703

- check incoming RF-signal of 897.4MHz at C731 (1747.8MHz at R705)

- check VTXBGSM 2.8Vpp at C720 (VTXBDCS 2.8Vpp at C714) and VPDGSM 1.3Vpp up to 2.5Vpp depending on TX-power-

level at C719 (VPDDCS 1.2Vpp up to 2.1Vpp at C718):

- check VTXLOGSM at R709. Signal/amplitude is the same as VTXBGSM, but it is only present in PA-free and -low mode.

If the above mentioned signals are ok but no or too low TX-power signal is measurable at L750 pin 1 (pin 3 in GSM1800),
it is necessary to change the poweramplifier N700.

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N600

- set phone with Phoenix to local mode and activate TX-burstmode Ch.37 (Ch.700 for GSM1800).

- check 26MHz reference clock at C660, refer to signal shown on page 14.

- check VR1A 4.75VDC at C600, VR2 2.8VDC at C723, VR3 2.8VDC at C662, VR4 2.8VDC at C601, VR5 2.8VDC at C603,

VR6 2.8VDC at C605 and VR7 2.8VDC at C650

- check with an oscilloscope TXC at C615 (0.5Vpp – 2.1Vpp depending on TX-powerlevel), also check TX/IQ-signals at
C616/617:

- check with an oscilloscope RFBUSDA at J2, RFBUSCLK at J3 and RFBUSEN1 at J4:

- check signal of SHF-oscillator at T650 pin 3 and 4 (3589.6MHz/Ch.37, 3495.6MHz/Ch.700). Refer to signal shown on previous

page.

If these signals are ok but no TX-signal is measurable at C726 (C700 in GSM1800), you have to change Hagar N600.
Unfortunately TXP and Hagar reset, which also are necessary for a working Hagar are not checkable because of missing testpoints.
Change UPP D400 in case of doubt and retest the phone.

D200

- if it seems that UEM D200 is responsible for the fault because of missing TXC- or corrupted TX/IQ-signals (refer to signals
shown on the top of this page), remember that you have to rewrite IMEI and SIMlock data after changing this part!

D400

- it has been seen that in some cases UPP D400 was responsible for “No Service”-faults. Unfortunately it is not possible
to check some important signals because of missing testpoints (e.g. TXP, Hagar reset). Nevertheless you can check with
an oscilloscope for activity on the RFBUS (J2/3/4). If already here a signal is missing and there is no short circuit to ground
on these lines, you should change D400.
Note that it is necessary to reflash the phone after changing UPP. Otherwise the phone will not switch on.

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Date 13.05.2002

Receiver does not work

Check C550 or

change Z500/520

Check/change

V550/N600

Check/change

C555/556, Z551

RXIQ-signals at

Check

C608/611

GSM1800

nOK

nOK

nOK

nOK nOK

Check

1842.8MHz at
C551

OK

Check

1842.8MHz at
C552

OK

Check

1842.8MHz at
L551

OK OK

VR3 2.8VDC at C602/662; VR4 2.8VDC at C601; VR5 2.8VDC at C603;

VR6 2.8VDC at C605; VREFRF_1 1.35VDC at C613;VREFRF_2 1.35VDC at

C612; RFBUSDA at J2; RFBUSCLK at J3; RFBUSEN1 at J4.

Check SHF oscillator at T650 pin3/4 (GSM900 RX Ch.37: 3769.6MHz,

If signals are ok but no RX-signal is measurable at C608/611, change

RX does not work

Use Phoenix to set phone

into RX-burstmode

GSM900 Ch.37 / GSM

1800 Ch.700

Set RF-generator to a high

RF-level output

Check 26MHz

REFCLK at C660,

frequency deviation

<100Hz

nOK

Check VR3 2.8VDC at C662,

also check AFC-voltage at C661,

normally 1.2VDC.

Change G660 if frequency

deviation is >100Hz.

Check signals for HAGAR N600:

VR1A 4.75VDC at C600; VR2 2.8VDC at C723;

GSM1800 RX Ch.700: 3685.6MHz)

HAGAR N600. Probably UPP D400 faulty

UEM D200 faulty in all

probability

GSM900

Check

942.4MHz at
C501

OK

Check

942.4MHz at
C502

OK

Check

942.4MHz at
L501

OKOK

nOK

nOK

nOK

RXIQ-signals

at C608/611

Check C500, L502

or change Z500/520

Check/change

V500/N600

Check/change

C505/506, Z501

Check

OKOK

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Date 13.05.2002

G660

- first thing to do as in case of TX-faults is to set phone with Phoenix to local mode, activate RX-burstmode Ch.37

- check VR3 2.8VDC at C662. With only this voltage the oscillator must be able to work on a frequency of 26MHz.

Otherwise you have to change G660. Signal of G660 at C660 is shown on page 14.
AFC-voltage at C661 normally is 1.25VDC, but may vary between 0.05VDC and 2.5VDC.
If frequency deviation of G660 is >100Hz it is necessary to change the oscillator!

G650, C653

- to check if the SHF-oscillator G650 is working you have to activate RX-burstmode Ch.37. After that check signal
(3769.6MHz) at T650 pin 3 and 4 as shown below:

If no signal is measurable at T650 check VR7 2.6VDC at C650. If OK, set span of your analyser to e.g. 250MHz to check if the
oscillator works on any other frequency as on the supposed. In case of that check control voltage at C652 which normally is
3VDC on channel 37. Especially check C653 (tendency to leak) in case of noise on the control voltage.
In case that the oscillator does not work at all, change G650 and retest the phone.

N600

- set phone with Phoenix to local mode and activate RX-burstmode Ch.37 (Ch.700 for GSM1800), set RF-generator to
high RF-level output, e.g. –40dBm

- check 26MHz reference clock at C660, refer to signal shown on page 14

- check incoming RX-signal of 942.4MHz at L501 (1842.8MHz at L551)

- check VR1A 4.75VDC at C600, VR2 2.8VDC at C723, VR3 2.8VDC at C662, VR4 2.8VDC at C601, VR5 2.8VDC at C603,

VR6 2.8VDC at C605 and VR7 2.8VDC at C650

- check with an oscilloscope RFBUSDA at J2, RFBUSCLK at J3 and RFBUSEN1 at J4, refer to signals shown on page 15

- check signal of SHF-oscillator at T650 pin 3 and 4 (3769.6MHz/Ch.37, 3685.6MHz/Ch.700) as shown in the picture before.

If these signals are ok but no RX I/Q-signal is measurable at C608/611, you have to change Hagar N600. Probably UPP D400
is faulty. Change part in case of doubt and retest the phone.

I010

- in case that customer complains poor receiver signal strenght but no fault can be found when module is in the service-jig,
especially check mechanical condition of antenna´s spring contacts which you can find at the top of the B-cover´s inner side.
These contacts must not be bent or soiled in any way, in case of doubt exchange the B-cover and retest the phone.

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CHANGE HISTORY

Originator Status Version Date Comment

TS Training
Group

TS Training
Group

Draft 0.1 11.02.2002

First draft version for the repair group

Approved 1.0 28.02.2002 First approved release

TS Training
Group

TS Training
Group

Draft 1.5 29.04.2002 Contact service part added

Approved 2.0 13.05.2002 Pictures replaced

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CONFIDENTIAL

Schematic diagrams
NHM-7
Modified : 04.03.2002

1(10)

Version 4.0 Approved

(PCB) Version LA-5_17

BB Connections

1 1 10/200110/2001

Nokia Nokia CorporationCorporation

B–3B–3Issue Issue

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CONFIDENTIAL

Schematic diagrams
NHM-7
Modified : 04.03.2002

2(10)

Version 4.0 Approved

(PCB) Version LA-5_17

System connector

UEM

BSI
BATT TEMP

Ext. Audio

Charger

Vibra

FM Radio

1 10/2001Nokia Corporation

UEM

UEM

MIC

nokia

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D200

UPP

UPP

CONFIDENTIAL

Schematic diagrams
NHM-7
Modified : 04.03.2002

3(10)

Version 4.0 Approved

(PCB) Version LA-5_17

User Interface and Audio

UEM

UPP

UEM

1 10/2001Nokia Corporation

1 10/2001 Nokia Corporation

11 10/2001Nokia Corporation

X100

X100

UEM

X100

X100

B–5

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X100

CONFIDENTIAL

Schematic diagrams
NHM-7
Modified : 04.03.2002

4(10)

Version 4.0 Approved

(PCB) Version LA-5_17

UEM of BB

UPP

UPP

UPP

UPP

UPP

UPP

1 10/2001Nokia Corporation

TXC

1.8 V

1.8 V

2.8V

2.8V

N600

2.8V

VBATT

B–1

B301/X303

X100

X386

V351

HAGAR

VBATT 1

VBATT 2

VBATT 3

1 10/2001Nokia Corporation

VBATT 4

VBATT 5

VBATT 6

B–8Issue

X100

D200

(BSI, BTEMP)

Z301

UPP

R422
24k

B–6

Sim reader

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X300
D200
D450
X350
N356
N600

CONFIDENTIAL

Schematic diagrams
NHM-7
Modified : 04.03.2002

5(10)

Version 4.0 Approved

(PCB) Version LA-5_17

UPP and decoupling capacitors

UEM

UEM

UEM

FLASH D450

FLASH D450

C401

C400

100n

10n

C404 C405

10n 10n

C402

C403

10n

10n

1 10/2001 Nokia Corporation

TXP
RESET

RFBUSCLK
RFBUSDA
RFBUSEN1

N600

UEM

UEM

UEM

HAGAR

13MHz

X300

FLASH D450

X300

B–12Issue

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Schematic diagrams
NHM-7
Modified : 04.03.2002

RF & BB

6(10)

Version 4.0 Approved

(PCB) Version LA-5_17

Flash memory

C450 C451

10n

100n

C454

100n

UPP

1 10/2001Nokia Corporation

UPP

UPP

VF Flash

VPP

UPP

B–14Issue

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Schematic diagrams
NHM-7
Modified : 04.03.2002

Version 4.0 Approved

(PCB) Version LA-5_17

7(10)

UI board

1 10/2001Nokia Corporation

Layout diagram-LK5

1 10/2001 Nokia Corporation

D200

UEM

Infrared module

1 10/2001Nokia Corporation

D400

UPP

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UPP

SYS-Connector

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Schematic diagrams
NHM-7
Modified : 04.03.2002

Version 4.0 Approved

(PCB) Version LA-5_17

FM radio

8(10)

1.8 V

1.8 V

1 10/2001 Nokia Corporation

2.8 V

UEM

B–10Issue