Nokia 6110 Service manual
Programs After Market Services (PAMS)
Technical Documentation
[NMP Part No.0275341]
NSE–3 SERIES
CELLULAR
PHONES
Last Update 11/97
Programs After Market Services (PAMS)
Technical Documentation
NSE–3 SERIES DIGITAL CELLULAR PHONES
SERVICE MANUAL
OVERALL CONTENTS
NSE–3 Series Core Transceiver booklet comprising
Chapter 1: Foreword
Chapter 2: General Information
Chapter 3: System Module
Chapter 4: UI Module
Appendices to Transceiver booklet covering a specific variant
Appendix 1: Transceiver NSE–3NX
Booklets comprising
Service Software Instructions
Tuning Instructions
Service Tools
Disassembly/Troubleshooting Instructions
Handsfree Unit HFU–2
Non–serviceable Accessories
Installation Instructions CARK–64
Installation Instructions CARK–91
Last Update 11/97
PAMS Technical Documentation
NSE–3 SeriesTransceivers
Chapter 1
Foreword
Original 11/97
NSE–3
PAMS
Foreword
This document is intended for use by qualified service personnel only .
Company Policy
Our policy is of continuous development; details of all technical modifications
will be included with service bulletins.
While every endeavour has been made to ensure the accuracy of this
document, some errors may exist. If any errors are found by the reader,
NOKIA MOBILE PHONES Ltd should be notified in writing.
Please state:
Title of the Document + Issue Number/Date of publication
Latest Amendment Number (if applicable)
Page(s) and/or Figure(s) in error
Please send to: Nokia Mobile Phones Ltd
Technical Documentation
IMPORTANT
PAMS Technical Documentation
PO Box 86
FIN–24101 SALO
Finland
Page 1 – 2
Original 11/97
PAMS
NSE–3
Technical Documentation
Warnings and Cautions
Please refer to the phone’s user guide for instructions relating to
operation, care and maintenance including important safety information.
Note also the following:
Warnings:
1. CARE MUST BE TAKEN ON INSTALLATION IN VEHICLES
FITTED WITH ELECTRONIC ENGINE MANAGEMENT
SYSTEMS AND ANTI–SKID BRAKING SYSTEMS. UNDER
CERTAIN FAULT CONDITIONS, EMITTED RF ENERGY CAN
AFFECT THEIR OPERATION. IF NECESSARY, CONSULT
THE VEHICLE DEALER/MANUFACTURER TO DETERMINE
THE IMMUNITY OF VEHICLE ELECTRONIC SYSTEMS TO
RF ENERGY.
2. THE HANDPORTABLE TELEPHONE MUST NOT BE
OPERATED IN AREAS LIKELY TO CONTAIN POTENTIALLY
EXPLOSIVE ATMOSPHERES EG PETROL STATIONS
(SERVICE STATIONS), BLASTING AREAS ETC.
Foreword
3. OPERATION OF ANY RADIO TRANSMITTING EQUIPMENT,
Cautions:
1. Servicing and alignment must be undertaken by qualified
2. Ensure all work is carried out at an anti–static workstation and
3. Ensure solder, wire, or foreign matter does not enter the
4. Use only approved components as specified in the parts list.
5. Ensure all components, modules screws and insulators are
INCLUDING CELLULAR TELEPHONES, MAY INTERFERE
WITH THE FUNCTIONALITY OF INADEQUATELY
PROTECTED MEDICAL DEVICES. CONSULT A PHYSICIAN
OR THE MANUFACTURER OF THE MEDICAL DEVICE IF
YOU HAVE ANY QUESTIONS. OTHER ELECTRONIC
EQUIPMENT MAY ALSO BE SUBJECT TO INTERFERENCE.
personnel only.
that an anti–static wrist strap is worn.
telephone as damage may result.
correctly re–fitted after servicing and alignment. Ensure all
cables and wires are repositioned correctly.
Original 11/97
Page 1 – 3
NSE–3
PAMS
Foreword
Technical Documentation
[This page intentionally left blank]
Page 1 – 4
Original 11/97
PAMS Technical Documentation
NSE–3 Series Transceivers
Chapter 3
System Module
Original 11/97
NSE–3
PAMS
System Module
CONTENTS
Transceiver NSE–3 3 – 5. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Introduction 3 – 5. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Functional Description 3 – 5. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Interconnection Diagram 3 – 6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
System Module 3 – 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
External and Internal Connectors 3 – 7. . . . . . . . . . . . . . . . . . . . .
System Connector Contacts 3 – 8. . . . . . . . . . . . . . . . . . . . . . .
RF Connector Contacts 3 – 9. . . . . . . . . . . . . . . . . . . . . . . . . . .
Supply Voltages and Power Consumtion 3 – 9. . . . . . . . . . . .
Functional Description 3 – 9. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Baseband Module 3 – 10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Block Diagram 3 – 10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Technical Summary 3 – 10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Bottom Connector External Contacts 3 – 12. . . . . . . . . . . . . . .
Bottom Connector Signals 3 – 12. . . . . . . . . . . . . . . . . . . . . . . .
Battery Connector 3 – 14. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SIM Card Connector 3 – 15. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Internal Microphone 3 – 15. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Infrared Module Connections 3 – 15. . . . . . . . . . . . . . . . . . . . . .
RTC Backup Battery 3 – 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Buzzer 3 – 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Functional Description 3 – 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Distribution 3 – 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Battery charging 3 – 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Startup Charging 3 – 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Battery Overvoltage Protection 3 – 19. . . . . . . . . . . . . . . . . . . .
Battery Removal During Charging 3 – 20. . . . . . . . . . . . . . . . . .
Different PWM Frequencies ( 1Hz and 32 Hz) 3 – 21. . . . . . .
Battery Identification 3 – 22. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Battery Temperature 3 – 23. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Supply Voltage Regulators 3 – 23. . . . . . . . . . . . . . . . . . . . . . . .
Switched Mode Supply VSIM 3 – 25. . . . . . . . . . . . . . . . . . . . . .
Power Up 3 – 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power up with a charger 3 – 26. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Up With The Power Switch (PWRONX) 3 – 26. . . . . . .
Power Up by RTC 3 – 27. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Up by IBI 3 – 27. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Acting Dead 3 – 27. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Active Mode 3 – 27. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Sleep Mode 3 – 27. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Charging 3 – 27. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Off 3 – 28. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Watchdog 3 – 28. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Technical Documentation
Page 3 – 2
Original 11/97
PAMS
NSE–3
Technical Documentation
Audio control 3 – 29. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
External Audio Connections 3 – 30. . . . . . . . . . . . . . . . . . . . . . .
Analog Audio Accessory Detection 3 – 31. . . . . . . . . . . . . . . . .
Headset Detection 3 – 31. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Internal Audio Connections 3 – 32. . . . . . . . . . . . . . . . . . . . . . . .
4–wire PCM Serial Interface 3 – 32. . . . . . . . . . . . . . . . . . . . . . .
Alert Signal Generation 3 – 33. . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Control 3 – 33. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MAD2 3 – 33. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Memories 3 – 43. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Program Memory 3 – 43. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SRAM Memory 3 – 43. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EEPROM Memory 3 – 43. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MCU Memory Map 3 – 44. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Flash Programming 3 – 44. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
COBBA–GJ 3 – 44. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Infrared Transceiver Module 3 – 45. . . . . . . . . . . . . . . . . . . . . . .
Real Time Clock 3 – 45. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RTC backup battery charging 3 – 46. . . . . . . . . . . . . . . . . . . . . .
Vibra Alerting Device 3 – 46. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IBI Accessories 3 – 47. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phone Power–on by IBI 3 – 47. . . . . . . . . . . . . . . . . . . . . . . . . . .
IBI power–on by phone 3 – 47. . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Module 3 – 48. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Ratings 3 – 48. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Frequency Plan 3 – 48. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Distribution Diagram 3 – 49. . . . . . . . . . . . . . . . . . . . . . . . . .
DC Characteristics 3 – 50. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Regulators 3 – 50. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Control Signals 3 – 50. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Functional Description 3 – 50. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Frequency synthesizers 3 – 50. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Receiver 3 – 52. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Transmitter 3 – 53. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AGC strategy 3 – 55. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AFC function 3 – 56. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Receiver blocks 3 – 56. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RX interstage filter 3 – 56. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1st mixer in CRFU_1a 3 – 56. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1st IF–filter 3 – 56. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
System Module
Original 11/97
Page 3 – 3
NSE–3
PAMS
System Module
Transmitter Blocks 3 – 57. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TX interstage filter 3 – 57. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power amplifier MMIC 3 – 57. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Synthesizer blocks 3 – 57. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VHF VCO and low pass filter 3 – 57. . . . . . . . . . . . . . . . . . . . . . . .
UHF PLL 3 – 57. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UHF PLL block in PLUSSA 3 – 57. . . . . . . . . . . . . . . . . . . . . . . . . .
UHF VCO module 3 – 58. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UHF local signal input in CRFU_1a 3 – 58. . . . . . . . . . . . . . . . . . .
Connections 3 – 58. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF connector and antenna switch 3 – 58. . . . . . . . . . . . . . . . . . . .
Timings 3 – 61. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Synthesizer control timing 3 – 61. . . . . . . . . . . . . . . . . . . . . . . . . . .
Transmitter power switching timing diagram 3 – 63. . . . . . . . . . .
Synthesizer clocking 3 – 63. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Block Diagram of Baseband Blocks 3 – 64. . . . . . . . . . . . . . . . . . .
Technical Documentation
Parts list of UP8T (EDMS Issue 11.10) 3 – 65
Schematic Diagrams:
Block Diagram of System/RF Blocks 3/A3–1. . . . . . . . . . . . . . . . . . . . . .
Circuit Diagram of Baseband (Version 12 Edit 8) 3/A3–2. . . . . . . . . .
Circuit Diagram of Power Supply (Version 14 Edit 41) 3/A3–3. . . . . .
Circuit Diagram of SIM Connectors (Version 14 Edit 9) 3/A3–4. . . . . .
Circuit Diagram of CPU Block (Version 14 Edit 23) 3/A3–5. . . . . . . . .
Circuit Diagram of Audio (Version 14 Edit 27) 3/A3–6. . . . . . . . . . . . .
Circuit Diagram of IR Module (Version 14 Edit 21) 3/A3–7. . . . . . . . . .
Circuit Diagram of RF Block (Version 14 Edit 26) 3/A3–8. . . . . . . . . . .
Layout Diagram of UPT8T (Version 14) 3/A3–9. . . . . . . . . . . . . . . . . . .
Page 3 – 4
Original 11/97
PAMS
NSE–3
Technical Documentation
Transceiver NSE–3
Introduction
The NSE–3 is a radio transceiver unit designed for the GSM network. It is a
GSM phase 2 power class 4 transceiver providing 15 power levels with a
maximum output power of 2 W. The transceiver is a true 3 V transceiver.
The transceiver consists of System/RF module (UP8T), User interface
module (UE4) and assembly parts.
The transceiver has full graphic display and two soft key based user interface.
The antenna is a fixed helix. External antenna connection is provided by
rear RF connector
Functional Description
System Module
There are five different operation modes:
– power off mode
– idle mode
– active mode
– charge mode
– local mode
In the power off mode only the circuits needed for power up are supplied.
In the idle mode circuits are powered down and only sleep clock is run-
ning.
In the active mode all the circuits are supplied with power although some
parts might be in the idle state part of the time.
The charge mode is effective in parallel with all previous modes. The
charge mode itself consists of two different states, i.e. the charge and the
maintenance mode.
The local mode is used for alignment and testing.
Original 11/97
Page 3 – 5
NSE–3
PAMS
System Module
Interconnection Diagram
10 9
Technical Documentation
Keypad Display
User Interface
Module
UE4
28
6
2
Earpiece
4
SIM Battery
System/RF
Module
1
Antenna
2
Mic
Connector
UP8
System
Connector
RF
2
Charger
3 + 36
2
IR Link
Page 3 – 6
Original 11/97
PAMS
NSE–3
Technical Documentation
System Module
External and Internal Connectors
System Module
Rubber boot
Microphone
Contact 1
DC–jack
Contact 2
Microphone port
Contacts
3...8
Contact 9
Solderable element,
2 pcs
Cable/Cradle connector,
guiding/fixing hole, 3 pcs
Original 11/97
Page 3 – 7
NSE–3
PAMS
System Module
System Connector Contacts
Con-
tact
1 VIN Charger input volt-
DC–
JACK
DC–
JACK
Line
Sym-
bol
L_GND Charger ground
VIN Charger input volt-
Parameter Mini-
age
Charger input cur-
rent
input
age
Charger input cur-
rent
Technical Documentation
Typical
mum
7.1
720
7.24
320
0 0 0 V/ Supply ground
7.1
720
7.24
320
/ Nomi-
nal
8.4
800
7.6
370
8.4
800
7.6
370
Maxi-
mum
9.3
850
16.0
420
9.3
850
16.0
420
Unit / Notes
V/ Unloaded ACP–9 Charger
mA/ Supply current
V/ Unloaded ACP–7 Charger
mA/ Supply current
V/ Unloaded ACP–9 Charger
mA/ Supply current
V/ Unloaded ACP–7 Charger
mA/ Supply current
DC–
JACK
2 CHRG
Mic
ports
3 XMIC Input signal volt-
4 SGND Signal ground 0 0 mVrms
5 XEAR Output signal volt-
6 MBUS I/O low voltage
7 FBUS_RXInput low voltage
CHRG
CTRL
CTRL
Output high voltage
PWM frequency
output low voltage
Output high voltage
PWM frequency
Acoustic signal N/A N/A N/A Microphone sound ports
age
age
I/O high voltage
Input high voltage02.0
2.0
0
2.0
0
2.0
2.8
32
0.5
2.8 V/ Charger control (PWM)
32
60 1 Vpp mVrms
80 1 Vpp mVrms
0.8
2.8
0.8
2.8
V/ Charger control (PWM)
high
Hz /PWM frequency for
charger
V
high
Hz /PWM frequency for
charger
Serial bidirectional control
bus.
Baud rate 9600 Bit/s
V/ Fbus receive.
V/ Serial Data, Baud rate
9.6k–230.4kBit/s
8 FBUS_TXOutput low voltage
Output high voltage
9 L_GND Charger ground
input
Page 3 – 8
0
2.0
0 0 0 V/ Supply ground
0.8
2.8
V/ Fbus transmit.
V/ Serial Data, Baud rate
9.6k–230.4kBit/s
Original 11/97
PAMS
Im edance
50ohm
tor
NSE–3
Technical Documentation
System Module
RF Connector Contacts
Con-
tact
1 EXT_ANT
2 GND
Line
Symbol
Parameter Mini-
mum
p
Typical
/ Nomi-
nal
Maxi-
mum
Unit / Notes
External antenna connec-
,
0 V DC
Supply Voltages and Power Consumtion
Connector Line Symbol Minimum Typical /
Nominal
Charging VIN 7.1 8.4 9.3 V/ Travel charger,
Charging VIN 7.25 7.6 16.0 V/ Travel charger.
Charging I / VIN 720 800 850 mA/ Travel char-
Charging I / VIN 320 370 420 mA/ Travel char-
Maximum/
Peak
Unit / Notes
ACP–9
ACP–7
ger, ACP–9
ger, ACP–7
Functional Description
The transceiver electronics consist of the Radio Module ie. RF + System
blocks, the UI PCB, the display module and audio components. The keypad and the display module are connected to the Radio Module with a
connectors. System blocks and RF blocks are interconnected with PCB
wiring. The Transceiver is connected to accessories via a bottom system
connector with charging and accessory control.
The System blocks provide the MCU, DSP and Logic control functions in
MAD ASIC, external memories, audio processing and RF control hardware in COBBA ASIC. Power supply circuitry CCONT ASIC delivers operating voltages both for the System and the RF blocks.
The RF block is designed for a handportable phone which operates in the
GSM system. The purpose of the RF block is to receive and demodulate
the radio frequency signal from the base station and to transmit a modulated RF signal to the base station. The PLUSSA ASIC is used for VHF
and PLL functions. The CRFU ASIC is used at the front end.
Original 11/97
Page 3 – 9
NSE–3
PAMS
System Module
Baseband Module
Block Diagram
TX/RX SIGNALS
COBBA
UI
COBBA SUPPLY
RF SUPPLIES
CCONT
BB SUPPLY
Technical Documentation
PA SUPPL Y
32kHz
CLK
SLEEP CLOCK
SIM
13MHz
CLK
SYSTEM CLOCK
IR
AUDIOLINES
BASEBAND
Technical Summary
The baseband module consists of four asics, CHAPS, CCONT, COBBA–
GJ and MAD2, which take care of the baseband functions of NSE–3.
The baseband is running from a 2.8V power rail, which is supplied by a
power controlling asic. In the CCONT asic there are 6 individually controlled regulator outputs for RF–section and two outputs for the baseband. In addition there is one +5V power supply output (V5V) for flash
programming voltage and other purposes where a higher voltage is needed. The CCONT contains also a SIM interface, which supports both 3V
and 5V SIM–cards. A real time clock function is integrated into the
CCONT, which utilizes the same 32kHz clock supply as the sleep clock. A
backup power supply is provided for the RTC, which keeps the real time
clock running when the main battery is removed. The backup power supply is a rechargable polyacene battery. The backup time with this battery
is minimum of ten minutes.
MAD
+
MEMORIES
VBAT
BATTERY
CHAPS
SYSCON
Page 3 – 10
Original 11/97
PAMS
NSE–3
Technical Documentation
The interface between the baseband and the RF section is handled by a
specific asic. The COBBA asic provides A/D and D/A conversion of the
in–phase and quadrature receive and transmit signal paths and also A/D
and D/A conversions of received and transmitted audio signals to and
from the UI section. The COBBA supplies the analog TXC and AFC signals to rf section according to the MAD DSP digital control and converts
analog AGC into digital signal for the DSP. Data transmission between the
COBBA and the MAD is implemented using a parallel connection for high
speed signalling and a serial connection for PCM coded audio signals.
Digital speech processing is handled by the MAD asic. The COBBA asic
is a dual voltage circuit, the digital parts are running from the baseband
supply VBB and the analog parts are running from the analog supply
VCOBBA.
The baseband supports three external microphone inputs and two external earphone outputs. The inputs can be taken from an internal microphone, a headset microphone or from an external microphone signal
source. The microphone signals from different sources are connected to
separate inputs at the COBBA asic.
System Module
The output for the internal earphone is a dual ended type output capable
of driving a dynamic type speaker. Input and output signal source selection and gain control is performed inside the COBBA asic according to
control messages from the MAD. Keypad tones, DTMF, and other audio
tones are generated and encoded by the MAD and transmitted to the
COBBA for decoding. A buzzer and an external vibra alert control signals
are generated by the MAD with separate PWM outputs.
EMC shieding is implemented using a metallized plastic B–cover with a
conductive rubber seal on the ribs. On the other side the engine is
shielded with a frame having a conductive rubber on the inner walls,
which makes a contact to a ground ring of the engine board and a
ground plane of the UI–board. Heat generated by the circuitry will be conducted out via the PCB ground planes.
Original 11/97
Page 3 – 11
NSE–3
C
PAMS
System Module
Technical Documentation
Bottom Connector External Contacts
Contact Line Symbol Function
1 VIN Charger input voltage
DC–jack
side contact
(DC–plug ring)
DC–jack
center pin
DC–jack
side contact
(DC–plug jacket)
2 CHRG_CTRL Charger control output (from phone)
Microphone
acoustic ports
3 XMIC Accessory microphone signal input (to phone)
4 SGND Accessory signal ground
L_GND Charger ground
VIN Charger input voltage
CHRG_CTRL Charger control output (from phone)
Acoustic signal (to phone)
5 XEAR Accessory earphone signal output (from phone)
6 MBUS MBUS, bidirectional serial data i/o
7 FBUS_RX FBUS, unidirectional serial data input (to phone)
8 FBUS_TX FBUS, unidirectional serial data output (from phone)
9 L_GND Charger ground
Bottom Connector Signals
Pin Name Min Typ Max Unit Notes
1,3 VIN
2 L_GND 0 0 V Supply ground
7.25
3.25
320
7.1
3.25
720
7.6
3.6
370
8.4
3.6
800
7.95
16.9
3.95
420
9.3
3.95
850
V
V
V
mA
V
V
mA
Unloaded ACP–7 Charger (5kohms
load)
Peak output voltage (5kohms load)
Loaded output voltage (10ohms load)
Supply current
Unloaded ACP–9 Charger
Loaded output voltage (10ohms load)
Supply current
4,5 CHRG_
TRL
6 MICP N/A see section Internal microphone
7 MICN N/A see section Internal microphone
Page 3 – 12
0 0.5 V Charger control PWM low
2.0 2.85 V Charger control PWM high
32 Hz PWM frequency for a fast charger
1 99 % PWM duty cycle
Original 11/97
PAMS
Baud rate 9600 Bit/s
Baud rate 9.6k–230.4kBit/s
Baud rate 9.6k–230.4kBit/s
NSE–3
Technical Documentation
8 XMIC
HMIC 0 3.2 29.3 mV Microphone signal
9 SGND
10 XEAR
2.0 2.2 kΩ Input AC impedance
1.47 1.55 V Mute (output DC level)
2.5 2.85 V Unmute (output DC level)
100 600 µA Bias current
System Module
NotesUnitMaxTypMinNamePin
1 Vpp Maximum signal level
58 490 mV Maximum signal level
Connected to COBBA MIC3P input
47 Ω Output AC impedance (ref. GND)
10 µF Series output capacitance
380 Ω Resistance to phone ground
47 Ω Output AC impedance (ref. GND)
10 µF Series output capacitance
16 300 Ω Load AC impedance to SGND (Head-
4.7 10 kΩ Load AC impedance to SGND (Acces-
1.0 Vpp Maximum output level (no load)
22 626 mV Output signal level
10 kΩ Load DC resistance to SGND (Acces-
16 1500 Ω Load DC resistance to SGND (Head-
2.8 V DC voltage (47k pull–up to VBB)
HEAR 28 626 mV Earphone signal (HF– HFCM)
11 MBUS 0 logic low
2.0 logic high 2.85
12 FBUS_RX 0 logic low
2.0 logic high 2.85
13 FBUS_TX 0 logic low
2.0 logic high 2.85
set)
sory)
sory)
set)
Connected to COBBA HF output
0.8 V Serial bidirectional control bus.
Phone has a 4k7 pullup resistor
0.8 V Fbus receive. Serial Data
Phone has a 220k pulldown resistor
0.5 V Fbus transmit. Serial Data
Phone has a 47k pullup resistor
14 GND 0 0.3 V Supply ground
Original 11/97
Page 3 – 13
NSE–3
5.0
Maximum voltage in call state with charger
PAMS
System Module
Technical Documentation
Battery Connector
Pin Name Min Typ Max Unit Notes
1 BVOLT 3.0 3.6 4.5
5.3
2 BSI
3 BTEMP
0 2.85 V Battery size indication
2.2 18 kohm Battery indication resistor (Ni battery)
20 22 24 kohm Battery indication resistor (service battery)
27 51 kohm Battery indication resistor (4.1V Lithium
68 91 kohm Battery indication resistor (4.2V Lithium bat-
0 1.4 V Battery temperature indication
V Battery voltage
Maximum voltage in idle state with charger
Phone has 100kohm pull up resistor.
SIM Card removal detection
(Treshold is 2.4V@VBB=2.8V)
battery)
tery)
Phone has a 100k (+–5%) pullup resistor,
Battery package has a NTC pulldown resis-
tor:
47k+–5%@+25C , B=4050+–3%
2.1
5 10
1.9
90 100
0 1 kohm Local mode initialization (in production)
20 22 25 kHz PWM control to VIBRA BATTERY
4 BGND 0 0 V Battery ground
3
20
2.85
200
V
ms
V
ms
Phone power up by battery (input)
Power up pulse width
Battery power up by phone (output)
Power up pulse width
Page 3 – 14
Original 11/97
PAMS
NSE–3
Technical Documentation
System Module
SIM Card Connector
Pin Name Parameter Min Typ Max Unit Notes
4 GND GND 0 0 V Ground
3, 5 VSIM 5V SIM Card
3V SIM Card
6 DATA 5V Vin/Vout
3V Vin/Vout
2 SIMRST 5V SIM Card
3V SIM Card
1 SIMCLK Frequency
Trise/Tfall
4.8
2.8
4.0
0
2.8
0
4.0
2.8
5.0
3.0
”1”
”0”
”1”
”0”
”1”
”1”
3.25
5.2
3.2
VSIM
0.5
VSIM
0.5
VSIM
VSIM
25
V Supply voltage
V SIM data
Trise/Tfall max 1us
V SIM reset
MHz
ns
SIM clock
Internal Microphone
Pin Name Min Typ Max Unit Notes
6 MICP 0.55 4.1 mV Connected to COBBA MIC2N input. The
maximum value corresponds to1 kHz, 0
dBmO network level with input amplifier
gain set to 32 dB. typical value is maximum value – 16 dB.
7 MICN 0.55 4.1 mV Connected to COBBA MIC2P input. The
maximum value corresponds to1 kHz, 0
dBmO network level with input amplifier
gain set to 32 dB. typical value is maximum value – 16 dB.
Infrared Module Connections
An infrared transceiver module is designed to substitute an electrical
cable between the phone and a PC. The infrared transceiver module is a
stand alone component capable to perform infrared transmitting and receiving functions by transforming signals transmitted in infrared light from
and to electrical data pulses running in two wire asyncronous databus. In
DCT3 the module is placed inside the phone at the top of the phone.
Signal Parameter Min Typ Max Unit Notes
IRON IR–module on/off 2.0 2.85 V Iout@2mA
FBUS_RX
FBUS_TX
IR receive pulse 0 0.8 V
IR receive no pulse 2.0 2.85 V
IR transmit pulse 2.0 2.85 V Iout@2mA
IR transmit no pulse 0 0.5 V
Original 11/97
Page 3 – 15
NSE–3
PAMS
System Module
Technical Documentation
RTC Backup Battery
The RTC block in CCONT needs a power backup to keep the clock running when the phone battery is disconnected. The backup power is supplied from a rechargable polyacene battery that can keep the clock running minimum of 10 minutes. The backup battery is charged from the
main battery through CHAPS.
Signal Parameter Min Typ Max Unit Notes
VBACK
VBACK
Backup battery charging from CHAPS
Backup battery charging from CHAPS
Backup battery supply
to CCONT
Backup battery supply
to CCONT
3.02 3.15 3.28 V
100 200 500 uA Vout@VBAT–0.2V
2 3.28 V Battery capacity
65uAh
80 uA
Buzzer
Signal Maximum
BuzzPWM /
BUZZER
Input
output cur-
rent
2mA 2.5V 0.2V 0...50 (128 lin-
high level
Input
low level
Level (PWM)
range, %
ear steps)
Frequency
range, Hz
440...4700
Page 3 – 16
Original 11/97
PAMS
NSE–3
Technical Documentation
Functional Description
Power Distribution
In normal operation the baseband is powered from the phone‘s battery.
The battery consists of one Lithium–Ion cell. There is also a possibility to
use batteries consisting of three Nickel Metal Hydride cells. An external
charger can be used for recharging the battery and supplying power to
the phone. The charger can be either a standard charger that can deliver
around 400 mA or so called performance charger, which can deliver supply current up to 850 mA.
The baseband contains components that control power distribution to
whole phone excluding those parts that use continuous battery supply.
The battery feeds power directly to three parts of the system: CCONT,
power amplifier, and UI (buzzer and display and keyboard lights). Figure 4
shows a block diagram of the power distribution.
System Module
The power management circuit CHAPS provides protection agains overvoltages, charger failures and pirate chargers etc. that would otherwise
cause damage to the phone.
PA SUPPL Y
VCOBBA
COBBA
UI
VBAT
VBB
VBB
MAD
+
MEMORIES
RF SUPPLIES
CCONT
PWRONX
CNTVR
VBB
PURX
PWM
LIM
CHAPS
VSIM
VBAT
RTC
BACKUP
SIM
BATTERY
Original 11/97
BASEBAND
VIN
BOTTOM CONNECTOR
Page 3 – 17
NSE–3
PAMS
System Module
Battery charging
MAD
VBAT
MAD
CCONTINT
CCONT
Technical Documentation
The electrical specifications give the idle voltages produced by the acceptable chargers at the DC connector input. The absolute maximum input voltage is 30V due to the transient suppressor that is protecting the
charger input. At phone end there is no difference between a plug–in
charger or a desktop charger. The DC–jack pins and bottom connector
charging pads are connected together inside the phone.
LIM
0R22
PWM_OUT
GND
ICHAR
VCHAR
VOUT
CHAPS
RSENSE
PWM
22k
VCH
GND
1n
TRANSCEIVER
1u
100k
10k
30V
2A
VIN
CHRG_CTRL
L_GND
CHARGER
NOT IN
ACP–7
Startup Charging
When a charger is connected, the CHAPS is supplying a startup current
minimum of 130mA to the phone. The startup current provides initial
charging to a phone with an empty battery. Startup circuit charges the
battery until the battery voltage level is reaches 3.0V (+/– 0.1V) and the
CCONT releases the PURX reset signal and program execution starts.
Charging mode is changed from startup charging to PWM charging that is
controlled by the MCU software. If the battery voltage reaches 3.55V
(3.75V maximum) before the program has taken control over the charging, the startup current is switched off. The startup current is switched on
again when the battery voltage is sunken 100mV (nominal).
Parameter Symbol Min Typ Max Unit
VOUT Start– up mode cutoff limit Vstart 3.45 3.55 3.75 V
VOUT Start– up mode hysteresis
NOTE: Cout = 4.7 uF
Start–up regulator output current
VOUT = 0V ... Vstart
Vstarthys 80 100 200 mV
Istart 130 165 200 mA
Page 3 – 18
Original 11/97
PAMS
NSE–3
Technical Documentation
Battery Overvoltage Protection
Output overvoltage protection is used to protect phone from damage.
This function is also used to define the protection cutoff voltage for different battery types (Li or Ni). The power switch is immediately turned OFF if
the voltage in VOUT rises above the selected limit VLIM1 or VLIM2.
Parameter Symbol LIM input Min Typ Max Unit
Output voltage cutoff limit
(during transmission or Li–
battery)
Output voltage cutoff limit
(no transmission or Ni–bat-
tery)
VLIM1 LOW 4.4 4.6 4.8 V
VLIM2 HIGH 4.8 5.0 5.2 V
The voltage limit (VLIM1 or VLIM2) is selected by logic LOW or logic
HIGH on the CHAPS (N101) LIM– input pin. Default value is lower limit
VLIM1.
System Module
VCH
VCH<VOUT
VOUT
VLIM1 or VLIM2
When the switch in output overvoltage situation has once turned OFF, it
stays OFF until the the battery voltage falls below VLIM1 (or VLIM2) and
PWM = LOW is detected. The switch can be turned on again by setting
PWM = HIGH.
t
t
SWITCH
PWM (32Hz)
Original 11/97
ON OFF
ON
Page 3 – 19
NSE–3
PAMS
System Module
Battery Removal During Charging
Output overvoltage protection is also needed in case the main battery is
removed when charger connected or charger is connected before the battery is connected to the phone.
With a charger connected, if VOUT exceeds VLIM1 (or VLIM2), CHAPS
turns switch OFF until the charger input has sunken below Vpor (nominal
3.0V, maximum 3.4V). MCU software will stop the charging (turn off
PWM) when it detects that battery has been removed. The CHAPS remains in protection state as long as PWM stays HIGH after the output
overvoltage situation has occured.
VCH
(Standard
Charger)
VOUT
Vpor
VLIM
4V
Vstart
Droop depends on load
& C in phone
Technical Documentation
Istart off due to VCH<Vpor
Vstarthys
PWM
SWITCH
1.1Battery removed, (standard) charger connected, VOUT rises (follows charger voltage)
2. VOUT exceeds limit VLIM(X), switch is turned immediately OFF
3.3VOUT falls (because no battery) , also VCH<Vpor (standard chargers full–rectified
4. Software sets PWM = LOW –> CHAPS does not enter PWM mode
5. PWM low –> Startup mode, startup current flows until Vstart limit reached
6. VOUT exceeds limit Vstart, Istart is turned off
7. VCH falls below Vpor
”1”
”0”
ON
OFF
2
output). When VCH > Vpor and VOUT < VLIM(X) –> switch turned on again (also PWM
is still HIGH) and VOUT again exceeds VLIM(X).
5
4
6
7
t
t
t
Page 3 – 20
Original 11/97
PAMS
NSE–3
Technical Documentation
Different PWM Frequencies ( 1Hz and 32 Hz)
When a travel charger (2– wire charger) is used, the power switch is
turned ON and OFF by the PWM input when the PWM rate is 1Hz. When
PWM is HIGH, the switch is ON and the output current Iout = charger current – CHAPS supply current. When PWM is LOW, the switch is OFF and
the output current Iout = 0. To prevent the switching transients inducing
noise in audio circuitry of the phone soft switching is used.
The performance travel charger (3– wire charger) is controlled with PWM
at a frequency of 32Hz. When the PWM rate is 32Hz CHAPS keeps the
power switch continuously in the ON state.
SWITCH
ON ONON OFF OFF
System Module
PWM (1Hz)
SWITCH
PWM (32Hz)
ON
Original 11/97
Page 3 – 21
NSE–3
PAMS
System Module
Battery Identification
Different battery types are identified by a pulldown resistor inside the battery pack. The BSI line inside transceiver has a 100k pullup to VBB. The
MCU can identify the battery by reading the BSI line DC–voltage level
with a CCONT (N100) A/D–converter.
BATTERY
BVOLT
BTEMP
BSI
2.8V
100k
10k
Technical Documentation
TRANSCEIVER
BSI
CCONT
The battery identification line is used also for battery removal detection.
The BSI line is connected to a SIMCardDetX line of MAD2 (D200). SIMCardDetX is a threshold detector with a nominal input switching level
0.85xVcc for a rising edge and 0.55xVcc for a falling edge. The battery
removal detection is used as a trigger to power down the SIM card before
the power is lost. The BSI contact in the battery pack is made 0.7mm
shorter than the supply voltage contacts so that there is a delay between
battery removal detection and supply power off,
Vcc
0.850.05 Vcc
0.550.05 Vcc
R
s
BGND
10n
SIMCardDetX
MAD
Page 3 – 22
GND
SIMCARDDETX
S
IGOUT
Original 11/97
PAMS
NSE–3
Technical Documentation
Battery Temperature
The battery temperature is measured with a NTC inside the battery pack.
The BTEMP line inside transceiver has a 100k pullup to VREF. The MCU
can calculate the battery temperature by reading the BTEMP line DC–
voltage level with a CCONT (N100) A/D–converter.
BATTERY
BVOLT
BSI
BTEMP
TRANSCEIVER
VREF
100k
10k
System Module
BTEMP
CCONT
R
T
NTC
Supply Voltage Regulators
The heart of the power distrubution is the CCONT. It includes all the voltage regulators and feeds the power to the whole system. The baseband
digital parts are powered from the VBB regulator which provides 2.8V
baseband supply. The baseband regulator is active always when the
phone is powered on. The VBB baseband regulator feeds MAD and memories, COBBA digital parts and the LCD driver in the UI section. There is
a separate regulator for a SIM card. The regulator is selectable between
3V and 5V and controlled by the SIMPwr line from MAD to CCONT. The
COBBA analog parts are powered from a dedicated 2.8V supply VCOBBA. The CCONT supplies also 5V for RF and for flash VPP. The CCONT
contains a real time clock function, which is powered from a RTC backup
when the main battery is disconnected.
BGND
1k
1k
10n
VibraPWM
MAD
MCUGenIO4
Original 11/97
Page 3 – 23
NSE–3
PAMS
System Module
The RTC backup is rechargable polyacene battery, which has a capacity
of 50uAh (@3V/2V) The battery is charged from the main battery voltage
by the CHAPS when the main battery voltage is over 3.2V. The charging
current is 200uA (nominal).
Operating mode Vref RF REG VCOB-
BA
Power off Off Off Off Off Off Pull
Power on On On/Off On On On On/Off
Reset On Off
VR1 On
Sleep On Off On On On On/Off
NOTE:
On On Off Pull
Technical Documentation
VBB VSIM SIMIF
down
down
CCONT includes also five additional 2.8V regulators providing power to
the RF section. These regulators can be controlled either by the direct
control signals from MAD or by the RF regulator control register in
CCONT which MAD can update. Below are the listed the MAD control
lines and the regulators they are controlling.
– TxPwr controls VTX regulator (VR5)
– RxPwr controls VRX regulator (VR2)
– SynthPwr controls VSYN_1 and VSYN_2 regulators (VR4 and VR3)
– VCXOPwr controls VXO regulator (VR1)
CCONT generates also a 1.5 V reference voltage VREF to COBBA,
PLUSSA and CRFU. The VREF voltage is also used as a reference to
some of the CCONT A/D converters.
In additon to the above mentioned signals MAD includes also TXP control
signal which goes to PLUSSA power control block and to the power amplifier. The transmitter power control TXC is led from COBBA to PLUSSA.
Page 3 – 24
Original 11/97
Loading...