1, 9DGNDDigital ground
2MMODEMinimum mode, input line Connect to
3AGNDAnalog ground
4TDATransmitted DBUS data to the data card.
PAMS Technical Documentation
DGND for normal operation. Connect to
M2BUS before power–on when
flash programming.
• state ”1”:
• state ”0”:
between the phone and accessories.
6RXD2Flash loading data from programmer
• input low level:
• input high level:
7TXD2Flash acknowledge data to programmer
• output low level:
• output high level:
8, 16NCNo connection
10NCNo connection
11DSYNCDBUS data bit sync 8 kHz clock.
• high level:
• low level:
12RDADBUS received data from data card.
3.6...4.65...4.8 V
0...0.2...0.7 V
0...0.2...0.7 V
3.6...4.65...4.8 V
0...0.2...0.7 V
3.6...4.65...4.8 V
3.6...4.65...4.8 V
0...0.2...0.7 V
13NCNot used.
14VFProgramming voltage for flash.
15DCLKDBUS data 512 kHz clock.
Page 10
• state ”1”:
• state ”0”:
• value:
• state ”1”:
• state ”0”:
Nokia Mobile Phones Ltd.
3.6...4.65...4.8 V
0...0.2...0.7 V
11.4...12...12.6 V
3.6...4.65...4.8 V
0...0.2...0.7 V
Issue 2 05/2000
PAMS Technical Documentation
Internal Signals
SymbolDescriptionValues
NME-2A
System Module GM8
SCLK
SDATA
SENAR
SENAT
RXPWR
Synthesizer clock
• load impedance:
• frequency:
Synthesizer data
• load impedance:
• data rate frequency:
Synthesizer enable
• PLL contr. disabled:
• PLL activated:
• current:
Synthesizer enable
• PLL contr. disabled:
• PLL activated:
• current:
RX supply voltage on/off
10 k
Ω
3.25 MHz
10 k
Ω
3.25 MHz
4.5...4.65...4.8 V
0...0.2...0.7 V
50 µA
4.5...4.65...4.8 V
0...0.2...0.7 V
50 µA
SYNTHPWR
TXPWR
TXP
AFC
• RX supply voltage on:
• RX supply voltage off:
• current:
Supply voltage on/off
• RF regulators on:
• RF regulators off:
• current:
TX supply voltage on/off
• TX supply voltage on:
• TX supply voltage off:
• current:
TX enable
• transmitter power enable:
• transmitter power disable:
Automatic frequency control voltage
4.5...4.65...4.8 V
0...0.2...0.7 V
0.5 mA
4.5...4.65...4.8 V
0...0.2...0.7 V
1.0 mA
4.5...4.65...4.8 V
0...0.2...0.7 V
0.5 mA
4.5...4.65...4.8 V
0...0.2...0.7 V
Issue 2 05/2000
• voltage min/max:
• resolution:
Nokia Mobile Phones Ltd.
0.35...4.35 V
11 bits
Page 11
NME-2A
System Module GM8
PAMS Technical Documentation
ValuesDescriptionSymbol
TXC
TXQP,TXQN
TXIP,TXIN
PDATA0–5
• load impedance (dynam-
10 k
ic):
TX transmit power control voltage
• voltage range min/max:
• impedance:
0.3...4.2 V
10 k
Differential TX quadrature signal
• differential voltage swing:
• d.c. level:
• load impedance:
1.15...1.2...1.25 V
2.30...2.35...2.40 V
30 k
Differential TX in phase signal
• differential voltage swing:
• d.c. level:
• load impedance:
1.15...1.2...1.25 V
2.30...2.35...2.40 V
30 k
Parallel AGC data
• reduced front end gain:
4.5...4.65...4.8 V
Ω
Ω
PP
Ω
PP
Ω
RXQ
RXI
RFC
• normal front end gain:
• current:
0...0.2...0.7 V
0.1 mA
• PDATA1; AGC 3 dB reduction
• PDATA2; AGC 6 dB reduction
• PDATA3; AGC 12 dB reduction
• PDATA4; AGC 24 dB reduction
• PDATA5; AGC 12 dB reduction
RX quadrature signal
• output level:
• source impedance:
15 mV
470
Ω
PP
RX in phase signal
• output level:
• source impedance:
15 mV
470
Ω
PP
High stability clock signal for the logic circuits
• frequency:
26 MHz
Page 12
• signal amplitude:
• load resistance:
Nokia Mobile Phones Ltd.
1.0 V
10 k
PP
Ω
Issue 2 05/2000
PAMS Technical Documentation
NME-2A
System Module GM8
ValuesDescriptionSymbol
VREF
VBATT_RF
VBATT_I
6V5_RF
8V5_RX_TX
VAI
PA_CO
VCTCXO supply voltage
• voltage:
• current:
4.55...4.65...4.75 V
2.0 mA
Supply voltage for RF
• voltage:
10.8...13.2...15.6 V
Supply voltage for the PA module
• voltage:
10.8...13.2...15.6 V
Supply voltage for 5 V regulators
• voltage:
6.0...6.5...7.0 V
Supply voltage for BB
• voltage:
7.5...8.3...8.7 V
8.5 V regulator on/off
• logic high ”1”:
• logic low ”0”:
4.7 V
0 V
Power amplifier supply compensation
*Load Impedance
1k2 Ohm
PA_ADJ
*DC range (VBATT Supply
Switched on)
Power control loop DC–ADJ
*Voltage range
*Load Impedance
15.6–10.2 Vdc
0.3...4.6 Vdc
10k Ohm
Issue 2 05/2000
Nokia Mobile Phones Ltd.
Page 13
NME-2A
System Module GM8
Baseband Block Description
General
The purpose of the baseband module is to control the phone, to process
audio signals to and from the RF block and to and from the handset/
handsfree transducers. The module also includes a SIM card reader and
furnishes external data and control lines.
Names of Functional Blocks
NameFunction
CTRLUControl unit for phone
PWRUPower supply
DSPUDigital signal processing block
PAMS Technical Documentation
AUDIOAudio coding
ASICD2CA GSM/PCN system ASIC; several functions
RFIRF baseband interface
Page 14
Nokia Mobile Phones Ltd.
Issue 2 05/2000
PAMS Technical Documentation
Clocking Scheme
DSP Clock
60.2 MHz
differential sine
wave
HSE–6XA
ear mic
OSCILLATOR
RFI Clock 13 MHz
Sleep Mode:
135.4kHz
System Module GM8
RF System Clock
26 MHz
RFI
VCTCXO
NME-2A
AUDIO
CODEC
Codec Sync Clock
8 kHz
DBUSCLK 512kHz
DBUSSYNC 8kHz
Most of the clocks are generated from the 26 MHz VCTCXO frequency by
the ASIC:
– 26 MHz clock for the MCU. MCU‘s internal clock frequency is half of
that.
DSP
Codec Main Clock
and data Transfer
clock
512kHz
Figure 1.Clocking Scheme
ASIC
SIMCLKSIMCLK
3.25 / 1.625
MHz
MCU Clock
26 MHz
MCU
– 13 MHz for the RFI.
– The ASIC also generates 135.4 kHz sleep mode clock for the RFI
– 3.25 MHz clock for SIM. When there is no data transfer between the
SIM card and the phone the clock can be reduced to 1.625 MHz.
Some SIM cards also allows the clock to be stopped in that mode.
– 512 kHz main clock for the codec and for the data transfer between
the DSP and the codec.
– 8 kHz synchronization clock for data transfer between the DSP and
the codec.
– 512 kHz clock and 8 kHz sync. clock for the DBUS data transfer.
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Nokia Mobile Phones Ltd.
Page 15
NME-2A
System Module GM8
The DSP has its own crystal oscillator. The DSP uses differential
sinusoidal clock. The frequency is 60.2 MHz. The DSP clock buffer can be
powered down via ASIC. The ASIC MCU generates 8 kHz clock to the
codec for the control data transfer.
In the idle mode all the clocks can be stopped except 26 MHz main clock
coming from the VCTCXO. The VCTCXO signal is buffered to limit
frequency pulling caused by the baseband circuits.
Reset and Power Control
PAMS Technical Documentation
CAR BATT
VOLTAGE
10.8––15.6
MIN / MAX
+ –
OVER/
UNDER
VOLTAGE
DETECT+
pre volt
regulator
reset in
DSP
xpwron
+–
tx off
PSL+
VL1
XRESreset in
XPwrOff
approx 2Hz
RFI
Reset Out
Reset Out
Vcc
Reset in
ASIC
resetreg
MCU
XPWRON
on/off
RF PA
SIMReset
HSE –6XA
handset
on/off
IGNS
Page 16
Figure 2.Reset & Power Control
There are two different ways to switch power on:
– Pushing the on/off button of the handset the effect of which is to
ground the input pin XPWRON of the System Connector or
– Pulling the input IGNS high.
Nokia Mobile Phones Ltd.
Issue 2 05/2000
PAMS Technical Documentation
All devices are powered up at the same time. The PSL+ supplies the reset
to the ASIC at power up. The ASIC start delivering clock signals the to the
DSP and the MCU. After about 20 µs the ASIC releases the resets to
MCU, RFI and DSP. MCU and RFI reset is released after 256 13 MHz
clock cycles. DSP reset release time from DSP clock activation can be
selected from 0 to 255 13MHz clock cycles. In our case it is 255. SIM
reset release time is according to GSM SIM specifications.
To turn off power for the phone, the user presses the on/off key (or turns
off the ignition key of the car). The MCU detects this. The MCU cuts off
any ongoing call, exits all tasks, acts inoperative to the user and stops the
PSL+ watchdog without resets. After power–down delay, the PSL+ cuts off
the supply from all circuitry.
When the IGNS line is connected the phone will turn on when this line
goes high. The IGNS circuit pulls the XPWRON low for a approx. 200
msec as if the handset on/off button was being pushed.
NME-2A
System Module GM8
The power may be turned off by sending a turn off command on the
M2BUS from handset or through the Data Connector.
In the User Interface SW an automatic shutdown feature will be
implemented. When no activity have been observed for a user settable
period. the phone will turn off thus limiting the risk of draining the car
battery.
Watchdog System
VBATT
GND
PRE
REG
reset
DSP
4
1
ASIC
1
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PSL+
XPWROFF
5
POWER
3
2
Figure 3.Watchdog System
Nokia Mobile Phones Ltd.
4
reset
MCU
Page 17
NME-2A
System Module GM8
Normal operation:
– 1. MCU tests DSP
– 2. MCU updates ASIC watchdog timer (> 2 Hz)
– 3. MCU pulses the XPWROFF input on the PSL+ (about 2 Hz)
Failed operation:
– 4. ASIC resets MCU and DSP after about 0.5 s failure
– 5. PSL+ switches power off about 1.5 s after the previous XPWROFF
pulse
CTRLU
The Control block contains a microcomputer unit (MCU) and three
memory circuits (FLASH, SRAM, EEPROM), a 20–bit address bus and an
8–bit data bus.
PAMS Technical Documentation
Main Features of the CTRLU Block
MCU functions:
– system control
– communication control
– handset interface functions
– authentication
– RF monitoring
– power up/down control
– self–test and production testing
– flash loading
Main Components
– Hitachi H8/536
H8/536 is a CMOS microcomputer unit (MCU) comprising a
CPU core and on–chip supporting modules with 16–bit architecture. The data bus to outside world has 8 bits.
Page 18
– 1024k*8bit FLASH memory
100 ns maximum read access time
contains the main program code for the MCU; part of the DSP
program code also located on FLASH
ASIC can address two 4 Mbit memories or one 8 Mbit memory.
– 32k*8bit SRAM memory
100 ns maximum read access time
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Issue 2 05/2000
PAMS Technical Documentation
– 8k*8bit EEPROM memory
150 ns maximum read access time
contains user defined information
there is a register bit on the ASIC which must be set before the
write operation to the EEPROM.
Input Signals of CTRLU
Name (from)Description
VL1(PWRU)Power supply voltage for CTRLU block
VREF(PWRU)Reference voltage for MCU A/D converter
EROMSELX(ASIC)Chip select for the EEPROM memory
ROMSELX(ASIC)Chip select for the FLASH memory
ROMAD18(ASIC)Chip select for the FLASH memory (FLASH1)
NME-2A
System Module GM8
RAMSELX(ASIC)Chip select for the SRAM memory
RESETX(ASIC)Reset signal for MCU
NMI(ASIC)Non–maskable interrupt request
MCUCLK(ASIC)Main clock for MCU
IRQX(ASIC)Interrupt request
PCMCDO(AUDIO)Audio codec control data receiving
TRF(RF)RF module temperature detection
VF(data conn.)Programming voltage for FLASH memory
RXD2The use of handsfree monitoring
(data conn.)FLASH programming data input on the produc-
tion line
MMODEMinimum mode for FLASH programming
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Nokia Mobile Phones Ltd.
Page 19
NME-2A
System Module GM8
Output Signals of CTRLU
Name (from)Description
XPWROFF(PWRU)Power off control, PSL+ watchdog reset
WSTROBEX(ASIC)MCU write strobe
RSTROBEX(ASIC)MCU read strobe
MCUAD(19:0)(ASIC)20 bit MCU address bus
MBUSDET(ASIC)MBUS activity detection
PCMCLK(AUDIO)Clock for audio cedec control data transfer
PCMCDI(AUDIO)Audio codec control data transmitting
XSELPCMC(AUDIO)Chip select for audio codec
TXD2Verification output of the programmed
(data connector)data of FLASH during programming
PAMS Technical Documentation
Bidirectional Signals of CTRLU
Name (from)Description
MCUDA(7;0)(ASIC)MCU’s 8 bit data bus
M2BUSAsynchronous serial data bus
Block Description
– MCU – memories
The MCU has a 20 bits wide address bus A(19:0) and an 8–bit
data bus with memories. The address bits A(19:16) are used
for chip select decoding. The decoding is done in the ESA
ASIC. The ASIC can address two 4 Mbit (or smaller) or one 8
Mbit flash memories. Hitachi HD647536 processor has internal
ROM and RAM memories.
– Flash programming
In flash programming a special flash programming box and a
PC is needed. Loading is done through the 16 pole Data Connector of the mobile phone. First MCU goes to minimum mode
(MBUS command from PC or if MBUS is connected to
MMODE line during power up). Then the flash software is
loaded from PC to flash loading box. When the loading is complete, flash loading to mobile can be started by MBUS command from PC to the MCU. After that the MCU asks the test
box to start flash loading to mobile. The box supplies 12 V programming voltage for flash and starts to send 250 bytes data
blocks to the MCU via RXD2 line. The baud rate is 406 kbit/s.
The MCU calculates the check sum, sends acknowledge via
TXD2 line and sends the data to flash. When all the data are
loaded the mobile resets and tells the flash loading box if the
loading was successful or not.
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Issue 2 05/2000
PAMS Technical Documentation
– CTRLU – PWRU
MCU controls the watchdog timer in PSL+. It sends a positive
pulse at a rate of approximately 2 Hz to XPWROFF pin of the
PSL+ to keep the power on. If MCU fails to deliver this pulse,
the PSL+ will remove power from the system. When power off
is requested by the user or by the MCU SW, (UI SW or CS
SW), the MCU leaves the PSL+ watchdog without reset pulses.
After the watchdog time has elapsed the PSL+ cuts off the supply voltages from the phone.
– CTRLU – ASIC
MCU and ASIC have a common 8–bit data bus and a 9–bit address bus. Bits A(4:0) are used for normal addressing whereas
bits A(19:16) are decoded in ASIC to chip select inputs for
CTRLU memories. ASIC controls the main clock, main reset
and interrupts to MCU. The internal clock of MCU is half the
MCUCLK clock speed. RESETX (produced by ASIC) resets
everything in MCU except the contents of the RAM. IRQX is a
general purpose interrupt request line from ASIC. After IRQX
request the interrupt register of the ASIC is read to find out the
reason for interrupt. NMI interrupt is used only to wake up
MCU from software standby mode.
NME-2A
System Module GM8
– CTRLU – DSPU
MCU and DSP communicate through the ASIC. ASIC has an
MCU mailbox and a DSP mailbox. MCU writes data to DSP
mailbox where DSP can only read the incoming data. In MCU
mailbox the data transfer direction is the opposite. When power
is switched on the MCU loads data from the Flash memory to
the DSP‘s external program memory through this mailbox.
– CTRLU – AUDIO
When the the chip select signal XSELPCMC goes low, MCU
writes or reads control data to or from the speech codec registers at the rate defined by PCMCLK. PCMCDI is an output data
line from MCU to codec and PCMCDO is an input data line
from codec to MCU. The data and control flows on separate
serial busses.
– CTRLU – RF
MCU has internal 8 channel 10 bit AD converter. Following signals are used to monitor RF: TRF RF temperature (currently
not in use)
– CTRLU – ACCESSORIES
– MINIMUM – MODE
Issue 2 05/2000
M2BUS is used to control external accessories. This interface
can also be used for factory testing and maintenance purposes.
Nokia Mobile Phones Ltd.
Page 21
NME-2A
()
(
System Module GM8
PWRU
The protection against overvoltage or wrong polarity on the supply lines is
included in this block which further creates the supply voltages for the
baseband block, for the RF synthesizer and switches the supply to the
handset and audio power amplifier.
Main Components
– Pre regulator
– PSL+ and ASIC
PAMS Technical Documentation
This special mode can be reached through a M2BUS command or by connecting the pin MMODE of the Data Connector
to the M2BUS while the phone is powered up.
Stabilizes the input supply voltage to 6.5 V for the PSL+and
supplies regulated power for RF module.
Generates voltages for baseband and reset signal for the
ASIC.
Contains power on switch, supply voltage detector and watchdog.
– Supply voltage monitor
Supervises the supply voltage within the specified Window.
– Power switch
Switches on the supply voltage for the pre–regulator handset
and audio power amplifier.
Input Signals of PWRU
XPWRON(handset)Power on/off button of handset (or
XPWROFF(CTRLU)Power off control, watchdog pulses
VBATT(sys.conn)Car battery voltage
8V5_RX_X(RF)Regulated voltage from RF module
Name (from)Description
IGNS sense ON signal
from MCU
IGNS(sys.conn.)Ignition sense from car ignition key
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Issue 2 05/2000
PAMS Technical Documentation
VBATT_RF (RF; TX+RX)
Suly for RF regulators
Output Signals of PWRU
Name (from)Description
XRES(ASIC)Master reset
VL1(CTRLU,ASIC,RFI)Logic supply voltage
VL2(DSPU)Logic supply voltage
VA1(AUDIO,UIF)Analog supply voltage
VA2(RFI)Analog supply voltage
VREF(CTRLU,RF)Reference voltage 4.65 V ±2 %
NME-2A
System Module GM8
VBSW_I(data conn)VBATT switched for LF amplifier and for
6V5_RFRegulated supply of the baseband that sup-
VBATT_I(RF PA)Battery voltage to RF PA, fused and pro-
VBDET(ASIC)Indicates VBATT is within window allowing
IGNDET(ASIC)Indicates logic level of ignition sense input
PAOFF(RF PA)Disables RF PA when supply voltage is out-
ANTC(sys.conn)Antenna control, current limited output that
Block Description
;
pp
handset
plies power to (RF synth,TX) a part of the
RF module too
tected against overvoltage
transmission
line
side the allowed window
follows
The PSL+ IC produces the following regulated supply voltages:
In addition it has internal watchdog voltage detection. The watchdog will
cut off output voltages if it is not reset once every 1.5 (±0.75) second. The
voltage detector resets the phone if the supply voltage falls below 6.4 V .
Issue 2 05/2000
– 2 * VL150 mA for logic
– VA140 mA for audios
– VA280 mA for RFI
– VREF5 mA reference
Nokia Mobile Phones Ltd.
Page 23
NME-2A
System Module GM8
The IGNS input signal from the System Connector is low pass filtered to
remove very short pulses and is then fed to a differentiation circuit which
will turn the power on by pulling XPWRON low. The filtered IGNS is also
fed to the ASIC allowing the MCU SW to monitor the actual logic state of
this pin. The IGNS turn on pulse is in the order of 200 msec.
When the phone is off no part of the circuit is powered up. The phone can
only be powered up by pushing the on/off button or pulling the IGNS line
high.
When the on/off button is pushed the power FET turns the pre–regulator
and PSL+on. The PSL+ keeps the pre–regulator on. The IGNS circuit
provides the same effect as pushing the on/off button.
The phone is turned off by pushing the on/off button. The handset transmit
an off message to the MCU which will stop emitting watchdog pulses for
the PSL+. The PSL+ times out and the phone turns off.
PAMS Technical Documentation
DSPU
Main interfaces of the DSP:
– MCU via ASIC mailbox
– ASIC
– audio codec
– data bus interface (DBUS) for accessories
– digital audio interface (DAI) for type approval measurements
Main features of the DSP block:
– speech processing
– speech coding/decoding
– RPE–LTP–LPC (Regular pulse excitation long
term prediction linear predictive coding)
– voice activity detection (VAD) for discontinuous transmis-
sion (DTX)
– comfort noise generation during silence
Page 24
– acoustic echo cancellation
– channel coding and transmission
– block coding (with ASIC)
– convolutional coding
– interleaving
– ciphering (with ASIC)
– burst building and writing it to ASIC
Nokia Mobile Phones Ltd.
Issue 2 05/2000
PAMS Technical Documentation
– Reception
– reading the A/D conversion results from ASIC
– impulse response calculation
– matched filtering
– bit detection (with Viterbi on ASIC)
– de–interleaving of soft decisions
– convolutional decoding (with Viterbi)
– block decoding (with ASIC)
– functions for RF measurements
– debugging functions for product development
– synthesizer control
– power ramp programming
– automatic gain control (AGC)
– automatic frequency control (AFC)
– controlling the operations during a TDMA frame
– controlling the multi–frame structure
– channel configuration control
Main Components of DSPU
– AT&T DSP 1616–X11
Digital signal processor with 12 kword internal ROM
– Two 32k *8 70 ns SRAMs for DSP external memory
– 60.2 MHz crystal oscillator to generate differential small signal clock
for the DSP
Issue 2 05/2000
Nokia Mobile Phones Ltd.
Page 25
NME-2A
System Module GM8
Input Signals of DSPU
Name (from)Description
VL1(PWRU)Logic supply voltage for DSP clock and buffer
VL2(PWRU)Logic supply voltage
DSPCLKEN(ASIC)Clock enable for DSP clock oscillator circuit
DSP1RSTX(ASIC)Reset for the DSP
PCMDATRCLKXPCM data input clock,
(ASIC)DBUS data output clock
CODEC_CLKPCM data output clock
PCMOUT(AUDIO)Received audio in PCM format
DBUSCLKDBUS data output clock
DBUSSYNCDBUS data bit sync clock
PAMS Technical Documentation
RDA(data conn.)DBUS received data
INT0, INT1(ASIC)Interrupts for the DSP
PCMCOSYCLKX
(ASIC)
Output Signals of DSPU
Name (from)Description
PCMIN(AUDIO)Transmitted audio in PCM format
IOX(ASIC)I/O enable, indicates access to
RWX(ASIC)Read/write X
DSPAD(16;9)(ASIC)Address bus and control signals
DBUSDET(ASIC)RDA line for DBUS activity detec-
TDA(data conn.)DBUS transmitted data
Bidirectional Signals of DSPU
PCM data bit sync clock
DSP address space
tion by ASIC
Page 26
Name (from)Description
DSPDA(15;0)(ASIC)16 bit data bus
Nokia Mobile Phones Ltd.
Issue 2 05/2000
PAMS Technical Documentation
Block Description of DSPU
The Control unit communicates with the DSP circuitry through a mailbox in
the ESA ASIC. The part of the DSP SW that resides in external SRAM is
loaded from Flash Prom is software is loaded through this mailbox at start
up.
The DSP includes two serial busses. One is used for speech data transfer
between the DSP and the codec. The other is used as an external data
bus and it is connected to the Data Connector. This bus can be used by
data accessories and also as a digital audio interface (DAI) in audio type
approval measurements. The clocks (512 kHz main clock and 8 kHz sync.
clock) are generated by the ASIC.
In transmit mode the DSP codes the speech and routes the resulting
transmit slots to the ESA. The ESA ASIC controls timing, and at specified
intervals sends these bits to the RFI for DA conversion.
NME-2A
System Module GM8
AUDIO
In digital receive mode the RFI AD converts the IF signal from the RF unit
under the control of the ESA. The DSP controls the ESA and receives the
converted bits. After channel and speech decoding, bits are converted into
an analog signal in the PCM codec, routed and fed to the earpiece/
loudspeaker.
The DSP controls the RF module through the ESA ASIC, where all
necessary timing functions are implemented, and control I/O lines are
provided eg. for synthesizer loading.
The DSP emulator can be connected to DSP pins TCK, TMS, TDO, TDI,
GND and VDD.
The DSP clock buffer can be turned off via a control pin on the ASIC to
save current when the DSP clock is not needed.
The AUDIO block consists of an audio codec , conditioning amplifiers for
the audio inputs and outputs and a power amplifier for the external
loudspeaker.
The codec contains microphone and earpiece amplifiers and all the
necessary switches for signal routing. The codec is controlled by the
MCU. The PCM data comes from and goes to the DSP.
The power amplifier drives the external loudspeaker for handsfree
function, and a highpass filter removes unwanted low frequency noise
picked up by the handsfree microphone.
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Nokia Mobile Phones Ltd.
Page 27
NME-2A
PCMIN(DSPU)
Received audio in PCM format
System Module GM8
Main Components of AUDIO
– Class B amplifier built using an op amp and discrete power transistors.
– Audio codec ST5080
– Contains: PCM codec, audio routing switches, microphone and ear-
piece amplifiers for 2 connections (internal and external devices) and
DTMF generator.
High pass filter/amplifier for the handsfree microphone.
Power amplifier for the external handsfree loudspeaker.
Input Signals of AUDIO
Name (from)Description
VA1(PWRU)Analog supply voltage
VBSW_1(PWRU)Switched VBATT supply for the
PAMS Technical Documentation
pre–regulator power amplifier (and
handset)
SYNC(ASIC)8 kHz frame sync
CODEC_CLK(ASIC)512 kHz codec main clock
PCMCDI(CTRLU)Audio codec control data
PCMCLK(CTRLU)Clock for audio codec control data
PCMOUT(DSPU)Transmitted audio in PCM format
PCMCDO(CTRLU)Audio codec control data
transfer
Control line to set the mic sensitivity according to
VDA recommendations
EAR(syst.conn.)Audio to handset
LSP(syst.conn)Audio to handsfree loudspeaker
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PAMS Technical Documentation
Block Description of AUDIO
The handset microphone is connected to the codec through an attenuator.
The external handsfree microphone is DC–biased by approx. 8V. The
handsfree mic signal is amplified and filtered and fed to the codec.
The gain of the ext. microphone input can be selected to one of two
settings, one adjusted for the standard Nokia microphone and a less
sensitive one adjusted for the VDA recommended sensitivity.
The microphone signal is A/D converted in thee PCM codec (A–law) and
delivered to the DSP.
Digital downlink signal from the DSP is fed to the D/A converter of the
codec. After the conversion the signal is low pass filtered and fed to a
attenuator operating as volume control and routing switches to direct it to
the earpiece of the handset or the power amplifier for the loudspeaker.
NME-2A
System Module GM8
ASIC
There are 8 separate volume settings. They cover a range of 15 dB for the
earpiece and a range of 31 dB for the handsfree speaker.
The audio codec communicates with the DSP (analog speech) through an
SIO (signals: PCMIN, SYNC, CODEC_CLK and PCMOUT) . The MCU
controls the audio codec function through a separate serial bus (signals:
PCMCDO, PCMCDI, PCMCLK and XSELPCMC). Gainsetting, routing ,
tone generation etc in the codec is controlled through writing to registers
in the codec. The 512 kHz clock and 8 kHz sync signal are produced by
the ASIC clock signals.
The codec generates DTMF tones (key beeps), ringing and warning tones
etc. for the external speaker. Some tones come also from the network.
The ASIC takes care of the following functions :
– interface between MCU, DSP and RFI
– hardware accelerator functions to DSP SW
– clock generation, clock distribution and clock disable/enable
– RF controls
– Timers
– M2BUS and D–BUS detect and D–BUS clock and sync generation
– SIM interface
– Control inputs and outputs for the system connector.
Main Components of ASIC
– ESA ASIC
– RFC buffer, a package of logic level inverters
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NME-2A
System Module GM8
Input Signals of ASIC
Name (from)Description
VL1(PWRU)Logic supply voltage
VL2(PWRU)Logic supply for SIM reader
IOX(DSPU)I/O enable, indicates access to DSP address
RWX(DSPU)Read/write X
WSTROBEX (CTRLU)MCU’s write strobe
RSTROBEX (CTRLU)MCU’s read strobe
RFC(RF)Reference clock from VCTCXO
XRES(PWRU)Master reset
DSPAD(16;0)(DSPU)Address bus and control signals
PAMS Technical Documentation
space
MCUAD(19;16,4;0)
(CTRLU)
DAX(RFI)Data acknowledge
MBUSDET(CTRLU)MBUS activity detection
DBUSDET(DSPU)DBUS activity detection
IGNDET(PWRU)Logic level of IGNS
VBDET(PWRU)Indicating VBATT is within window to allow
SIM_DETECTLogic signal indicating that a SIM card is pres-
PAOFF(PWRU)Indicating that operation of the RF PA stage is
Output Signals of ASIC
Name (to)Description
INT0,INT1(DSPU)Interrupts for DSP
NMI(CTRLU)Not maskable interrupt request
MCU’s address bus
transmission
ent (SIM reader)
disabled
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IRQX(CTRLU)Interrupt request
RESETX (CTRLU,RFI)Master (power up) reset
DSP1RSTX(DSPU)Reset for the DSP
WRX(RFI)Write strobe
RDX(RFI)Read strobe
RFIAD(3;0)(RFI)RFI address bus
SCLK(RF)Synthesizer load clock
SDATA(RF)Synthesizer load data
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Issue 2 05/2000
PAMS Technical Documentation
SENAR(RF)Receiver synthesizer enable
SENAT(RF)Transmit synthesizer enable
RXPWR(RF)RX circuitry power enable
TXPWR(RF)TX circuitry power enable
SYNTHPWR(RF)Synthesizer circuitry power enable
TXP(RF)Transmit enable
MCUCLK(CTRLU)Main clock for MCU
DSPCLKEN(DSPU)DSP clock circuit enable
RFICLK(RFI)RFI master clock
RFI2CLK(RFI)RFI sleep clock
NME-2A
System Module GM8
DescriptionName (to)
CODEC_CLK (DSPU,AU-
PCM data clock
DIO)
PCMDATRCLKXInverted PCM data clock, used as input
clock for
(DSPU)codec and DBUS interface
SYNC(AUDIO)Bit sync clock
PCMCOSYCLKX (DSPU)Bit sync clock, inverted
DCLK(DSPU)DBUS data clock
DSYNC(DSPU)DBUS bit sync clock
SIMCLK(UIF)SIM data clock
VSIM(UIF)SIM power control
ROMSELX(CTRLU)Chip select for the FLASH memory
ROMAD18 (CTRLU)Chip select for the FLASH memory
(FLASH1)
EROMSELX (CTRLU)Chip select for the EEPROM memory
RAMSELX(CTRLU)Chip select for the SRAM memory
CRM(sys.conn)Car radio mute
NOKIA_OEM (AUDIO)Set ext. mic. sensitivity to VDA recom-
PA_ADJPower adjustment for RF PA.
EAL(sys.conn)External alert
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NME-2A
System Module GM8
Bidirectional Signals of ASIC
Name (from)Description
DSPDA(15;0)(DSPU)16 bit data bus
MCUDA(7;0)(CTRLU)MCU’s 8 bit data bus
RFIDA(11;0)(RFI)12 bit data bus
SIMDATA(UIF)Serial data to SIM
Block Description of ASIC
PSL+ supplies the reset to the ASIC at power up. The ASIC starts the
clocks to the DSP and the MCU. After about 20 µS the ASIC releases the
resets to all circuitry. MCU and RFI reset is released after 256 13 MHz
clock cycles. DSP reset release time from DSP clock activation can be
selected from 0 to 255 13 MHz clock cycles. In our case 255 is selected.
SIM reset release time is according to GSM SIM specifications.
PAMS Technical Documentation
Two inverters buffers the 26MHz clock from the VCTCXO to the ASIC to
minimize the effect on the clock signal caused by varying load on the
clock. In the ASIC the clock is further buffered, divided and gated for the
MCU, RFI, SIM. The ASIC. It also generates main and sync clocks for
audio codec, DSP‘s SIOs and DBUS. The clock outputs can be disabled in
order to save current when the clock is not needed. The DSP oscillator
buffer can be turned off by the ASIC.
Interface to the MCU consists of 8 bit data bus ,5 bit lower address bus, 4
bit upper address bus, RSTRBEX, WSTROBEX, IRQX and NMI. ASIC is
in the same memory space as MCU memories (memory mapped on the
MCU). The ASIC generates chip select’s from the address bits A16–19.
There is also M2BUS detector, netfree counter and D–BUS detector in the
ASIC. Netfree interrupt IRQX occurs if no activity is detected in M2BUS in
about 3 ms. NMI is used to wake up the MCU from sleep mode.
MCU and DSP communicate through ASIC. ASIC has an MCU mailbox
and a DSP mailbox. MCU writes data to DSP mailbox where DSP can only
read the incoming data. In MCU mailbox the data transfer direction is the
opposite. The size of the mailbox is 64 * 8 bit.
The SIM interface is the electrical interface between the smart card used
in the GSM and the MCU via the ASIC. ASIC converts the serial data
received from the SIM to parallel data for MCU and converts parallel data
from MCU to serial mode for the card. The SIM interface also takes care
of the power up and down procedure to the card, frame and parity error
checking. The communication between card and ASIC is asynchronous
and half duplex. Four signals are used between the ASIC and the SIM
card: SIMDATA, SIMCLK,SIMRESET and VSIM. The clock frequency is
3.25 MHz. When there is no data transfer between the SIM card and the
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PAMS Technical Documentation
Mobile the clock can be reduced to 1.625 MHz. Some SIM cards also
allows the clock to be stopped in that mode. Supply voltage VSIM can be
switched off by the ASIC. The supply voltage is 4.65 V. The carddetect
input on the ASIC is connected to the carddetect switch of the SIM reader
and when the pin goes low (card not present) the ASIC will drive the SIM
Interface down in a controlled and well specified manner. The carddetect
switch is activated by the SIM–card and wil open/close while the contacts
of the SIM card are engaged with the SIM reader.
The interface to the DSP consists of 6 bit address bus, 16 bit data bus,
IOX and RWX lines. Data bus is latched using IOX, address bus is not.
The ASIC also generates interrupt INT0 when an edge occurs in DBUS
line (if the mask bit is off). INT1 is used as RX interrupt and as MFI
modulator interrupt to the DSP.
The Viterbi block is used to perform GSM/PCN convolutional decoding
and bit detection according to viterbi algorithm. It can be controlled and
accessed thoroughly by the DSP.
NME-2A
System Module GM8
RFI
Coder is used to perform block encoding, decoding, and ciphering
according to GSM algorithm A5 (only A5 not A5–2).
The ASIC takes care of the interface between the DSP and the RFI: TX
modulator, RX filter, TX and RX sample buffers and controlling state
machine. The interface to RFI consists 12 bit data bus, 4 bit address bus,
RDX and WRX. There is data acknowledge (DAX) from RFI to ASIC. Also
in this block are the serial RF synthesizer interface (SCLK, SDAT) and the
digital RF control signals (RXPWR, TXPWR, TXP, SYNTHPWR)
The RFI block consists of the RFI ASIC and its reference voltage
generator. This block is an interface between the RF and baseband
sections. The RFI block has the following functions:
– Receive and A/D convert the II and Q signals delivered by the IF am-
plifier of the RF module
– Produce I and Q TX modulation signals through D/A conversion plus
filtering
– Prepare the Automatic Frequency Control signal via D/A conversion
– Prepare TX power ramp TXC via D/A conversion
– Hold AGC setting data in a register
Main Components of RFI
– RFI ASIC
– 4.096 V external voltage reference LM4040 for RFI
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NME-2A
System Module GM8
Input Signals of RFI
VL1(PWRU)Logic supply voltage
VA2(PWRU)Analog supply voltage
RESETX(PWRU)Master (power up) reset
RFIAD(3;0)(ASIC)RFI address bus
RDX(ASIC)Read strobe
WRX(ASIC)Write strobe
RFICLK(ASIC)RFI master clock
RFI2CLK(ASIC)RFI sleep clock
RXQ(RF)RX quadrature signal
PAMS Technical Documentation
Name (from)Description
RXI(RF)RX in phase signal
Output Signals of RFI
Name (to)Description
DAX(ASIC)Data acknowledge
AFC(RF)Automatic frequency control voltage
TXC(RF)TX transmit power control voltage
TXQP,TXQN(RF)Differential TX quadrature signal
TXIP,TXIN(RF)Differential TX in phase signal
PDATA(5;0)(RF)Parallel AGC data for controlling the RF
VREF_2(PWRU)Reference used by VBATT window compa-
Bidirectional Signals of RFI
Name (to)Description
RFIDA(11;0)(ASIC)12 bit data bus
AGC amplifiers
rator
Block Description of RFI
The RFI provides A/D conversion of the in–phase (RXI) and quadrature
(RXQ) signals in the receive path. It has got 12 bit sigma–delta A/D
converters and the sample rate is 541.667 kHz.
Analog transmit path includes 8 bit D/A converters to generate the
in–phase (TXI) and quadrature (TXQ) signals. RFI has differential outputs
for TXI and TXQ. The sample rate is 1.0833 MHz.
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PAMS Technical Documentation
There is a 11 bit D/A converter for automatic frequency correction. The
sample rate is 1.3542 kHz.
Power ramp is done with 10 bit D/A converter. The sample frequency is
1.0833 MHz.
Digital AGC control is done with PDATA outputs.
The RFI has 12 bit data bus to the ASIC. The registers in the RFI are
accessed using 4 address bits. Control and clock signals are produced by
the ASIC.
The RFI has external 4.096 V voltage reference.
NME-2A
System Module GM8
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NME-2A
System Module GM8
RF Block Description
The RF block carries out all the RF functions of the transceiver. The RF
block works in GSM system.
Regulators
There are three regulators in the RF unit. The 1’st regulator is used for the
synthesizers. The 2’nd regulator is used for the receiver and the
transmitter discrete circuits. The 3’rd regulator (8.3V) is used for the TX
ramping circuit and RX amplifiers. The regulators reduce the car supply
voltage to the fixed 5.0 V and 8.3 V. The receiver, synthesizer and
transmitter circuits can be switched ON and OFF separately. Switching
sequence timing depends on the operation mode of the phone.
Power Distribution
PAMS Technical Documentation
All currents in the power distribution diagram (see RF Power Distribution
Diagram) are values with the sub modules in ”on” condition. Activity
percentages in SPEECH mode are 22.5 % for RXPWR, 15.8 % for
TXPWR and 100 % for SYNTHPWR. In IDLE mode, activities are 0.36 %,
0.0 % and 1.61 %, respectively. Switching of the supply voltage for each
block is controlled independently, and for example TXPWR and RXPWR
are not on, at the same time.
Current Consumption
In the following table the RF current consumption can be seen with
different status of the control signals. The VCTCXO is not included in the
results.
SYNTHP
WR:
LLLL0.1 mALeakage current
HLLL45 mASynthesizers and
HHLL60 mAReceive mode
HLHH4500 mA Transmission
RXPWR:TXPWR:TXP:Typ load
Notes:
current:
VCTCXO active
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PAMS Technical Documentation
Receiver
The received RF signal from the antenna is fed via a duplex filter to the
receiver unit. The duplex filters receiver branch is a bandpass filter. The
signal is amplified by a discrete low noise preamplifier. The gain of the
amplifier is controlled by the AGC control line (PDATA0). The nominal gain
of 15 dB is reduced in strong field conditions by about 30 dB. After the
preamplifier the signal is filtered by a dielectric filter. The filter and the
duplex filter rejects outband spurious signals coming from the antenna
and spurious emissions coming from inside the receiver unit. After the
filter a second LNA is placed in order to have enough gain before the
mixer.
The received signal is down converted by a passive double balanced
mixer. The first IF is 71 MHz.
The IF–signal is filtered using a SAW filter. This filter reject adjacent
channels signal, intermodulation signals and the second mirror. The AGC
dynamic range is split up in two amplifiers. First AGC–amplifier with
maximum 45 dB, and second AGC–amplifier with maximum 12 dB gain.
Last mentioned amplifier is integrated in the receiver IC. The 57 dB gain is
regulated in 3 dB step, using AGC control line PDATA 1–4. The second IF
center frequency is 13 MHz. The second IF mixer is integrated in the
receiver IC. The 13 MHz filter is a cheap ceramic filter. Also this filter has
adjacent channel and intermodulations rejection. Before the 13 MHz IF
signal is A/D–converted, the signal is amplified and split up in two
quadrature signals, using high and low pass filters.
NME-2A
System Module GM8
Duplex Filter
The duplex filter consists of two filters, RX and TX filter branch. The TX
filter is a notch–filter and it rejects the noise power at the RX frequency
band and TX harmonic signals. The RX filter (bandpass) rejects outband
blocking and spurious signals coming from the antenna.
Center frequency:
Pass band width (BW):±
Insertion loss at BW:
Ripple at BW:
Terminating impedance:
V.S.W.R. at BW:
TX attenuation:
• 935...960 MHz
• 1780...1830 MHz
• 2670...2745 MHz
ParameterValue TXValue RX
902.5 Mhz947.5 MHz
12.5 MHz
±
12.5 MHz
1.5 dB max.2.6 dB max.
1.2 dB max.1.5 dB max.
50
Ω
50
Ω
1.8 max.1.8 max.
30 dB min.
30 dB min.
30 dB min.
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NME-2A
2805
2880 MH
System Module GM8
RX attenuation:
PAMS Technical Documentation
Value RXValue TXParameter
• D.C...915 MHz
• 980...1031 MHz
• 1870...1920 MHz
•
Permissible input power:
Pre–Amplifier
The pre–amplifier amplifies the received signal coming from the antenna.
Frequency band:
Supply voltage (min/max):
Current consumption (max):
Insertion gain (min/typ):
Gain flatness:±
Noise figure (max):
Reverse isolation (min):
The first mixer is a passive single balanced mixer. The mixer down
converts the received RF signal to the 1st IF signal, 71 MHz.
ParameterValue
RX frequency range (min/max):
LO frequency range (min/max):
IF range (typ):
Input intercept point, IIP3
LO power level (min):
Noise figure (typ):
Conversion gain (typ):
The first IF amplifier is based on discrete components. It compensates for
missing amplification in the frontend.
PAMS Technical Documentation
ParameterValue
Supply voltage (min/typ/max):
Current consumption (typ/max):
Frequency range:
Conversion gain (typ):
Noise figure (typ):
Input intercept point (typ):
Input compression point (typ):
Parameter
In/out matching (typ):
First IF Filter
The channel selectivity of the receiver is split up in first and second IF
filters. The 71 MHz filter is a low loss SAW filter from Siemens. The filter
has single–ended input and balanced output.
Center frequency:
8.5 V
20 mA
71 Mhz
16 dB
3 dB
+3 dBm
0 dBm
Value
50
Ω
ParameterValue
71 MHz
Operation temperature range:
Input impedance:
Output impedance:
Insertion loss (nom/max):
Group delay distortion (nom/max):
2 dB bandwidth (min):±
3 dB bandwidth (min):±
The total dynamic AGC range for the receiver is 93 dB. The AGC amplifier
from AT&T has 0...45 dB AGC gain. The gain step is adjusted in 3 dB
step, using the interface lines data[1]–data[5].
ParameterValue
NME-2A
System Module GM8
Supply voltage (min/max):
Current consumption (max):
Frequency range (min/max):
Amplifier gain (nom):
ParameterValue
Amplifier gain control range (min/
max):
AGC step size:
Noise figure:
Output intercept point (max):
Absolute gain inaccuracy (max):±
Relative gain inaccuracy (max):±
4.5...5.5 V
16 mA
4...100 MHz, 3 dB cutoff
45 dB
0...45 dB
3 dB
10 dB
10 dB
0.5 dB over temp, range
0.3 dB
Receiver IF IC
The receiver integrated circuit is a semi–custom bipolar IC PMB2403
V1.4. The IC consist of the second IF mixer, 12 dB AGC amplifier and two
dividers.
Supply voltage (min/max):
Supply current (max):
Input frequency range (min/max):
Local freq. range of mixer (min/
max):
Conversion gain (nom):
Output compression point (min):
AGC gain step (min/max):
Absolute gain inaccuracy (max):±
AGC Amplifier + 2nd MixerValue
4.5...5.5 V
31 mA
45...100 MHz
170...400 MHz
12 dB
0.4 V
PP
0...12 dB
0.5 dB over temp. range
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NME-2A
System Module GM8
PAMS Technical Documentation
DividersValue
Input frequency range (min/max):
Divider ratio (nom):
Input power level (nom):
Output power level (min):
Second IF Filter
The second IF is a ceramic filter. This filter is inserted to obtain channel
selectivity in the receiver.
Terminating impedance (nom):
Operating temp. range (min/max):
Center frequency:
1 dB bandwidth (min):±
5 dB bandwidth (max):±
Insertion loss (max):
Group delay distortion (max):
180...400 MHz
1/2/4
–10 dBm
–5 dBm
ParameterValue
330
Ω
–30...+85 °C
13 MHz
90 kHz
220 kHz
6 dB
1500 ns at BW
Parameter
Attenuation
• fo ±400 kHz (min/nom):
• fo ±600 kHz (min/nom):
Second IF Amplifier
The second IF amplifier compensates for losses in the gain compensating
network, and in the quadrature split.
Supply voltage:
Current consumption:
Frequency range:
Conversion gain:
Noise figure:
Input intercept point:
The phase splitter consists of two filters, a highpass and lowpass. The
phase difference between the two output signals is 90 deg.
ParameterValue
NME-2A
System Module GM8
Frequency:
Imbalance amplitude (max):
Imbalance phase (max):
Attenuation from input RXI or RXQ:
Output impedance:
13 Mhz
1 dB
2 deg
9 dB
470
Ω
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NME-2A
System Module GM8
Transmitter
The transmitter frequency is generated by mixing the buffered UHF VCO
signal by the 116 MHz ( 232 MHz from the VHF VCO divided by 2).
Reject the noise in hte RX band from the modulator and PA Stage. The
mixer is double balanced diode mixer, from the LO port , which is fed by
the UHF signal. The final TX frequency is filtered before it is modulated in
the modulator.
The TX signal is amplified and filtered before it feeds the integrated power
amplifier with app. 8 dBm.
The interstage filters reject the unwanted mixer products, and together
with the TX part of the duplex filter, reject the noise in the RX band from
the modulator and the P/A.
The power amplifier delivers the transmitter output to the duplex filter,
which rejects the harmonics and wideband noise in the RX band. Max
outputpower at the antenna connector: 39dBM=8W
PAMS Technical Documentation
From the RF interface circuit (RFI), the power level and the up– and down
ramping is controlled by the TXC signal. The amplitude of this signal,
which has a raised cosine form, controls the power level from 13 dBm to
39 dBm. A directional coupler gives the feedback signal in the power
control loop, to which the raised cosine is an external signal reference.
Modulator Circuit
The modulator is a quadrature modulator IC PMB 2200 from Siemens.
The RF signal is first doubled and then divided (with two) to get accurate
90 degrees phase shifted signals to the I/Q mixers. After mixing, the
signals are combined and amplified. The balanced output is loaded and
converted to single ended of a transformer, which also add some
bandpass filtering.
Supply voltage (min/max):
Supply current (typ/nom/max):
Transmit frequency input
Transmit frequency input:
ParameterValue
4.5...5.5 V
32...40...48 mA, norm operation
Value
Page 44
ParameterValue
LO input frequency (min/max):
LO input power level (min/max):
max):
Differential offset voltage (typ/max):
Input impedance (min):
Gain unbalance (max):
Modulator output:
ParameterValue
Available RF power (min/max):
Available saturated RF power
(min/typ):
Suppression of 3rd order prods
(min):
Single sideband suppression:
6.0...12 µA
2.1...2.6 V
0.8...1.0...1.2 V
PP
1.0...3.0 mV
70 k
Ω
0.2 dB
–9...–3 dBm, Z
LOAD
=200
–5...0 dBm, ZiL=50 k
42 dB
40 dB
Ω
Ω
Up Conversion Mixer
The mixer is a double balanced diode mixer. The local signal coming from
the UHF synthesizer is balanced. The RF signal a on 116 MHz is the
output from the VHF PLL divided by two in the RX IC.
Input frequency:
LO frequency range (min/max):
TX frequency range (min/max):
Conversion loss (nom/max):
IIP3 (min):
LO – RF isolation (min):
LO power level (max):
ParameterValue
116 MHz
1006...1031 MHz
890...915 MHz
10...12 dB
3.0 dBm
20 dB
6.0 dBm
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NME-2A
System Module GM8
TX Interstage Filters
The TX interstage filters reject other signals than the final TX frequency
from the mixer products. After the modulator they also they also reject the
wideband noise from this circuit. Here only the dielectric filter is described.
The other filter is realized with discrete components after the mixer.
PAMS Technical Documentation
ParameterValue
Terminating impedance:
Operating temp. range (min/max):
Center frequency:
Bandwidth BW (min):±
Insertion loss at BW (nom/max):
Ripple at BW (nom/max):
V.S.W.R. at BW (nom/max):
Attenuation (min/typ)
• DC...800 MHz:
• 935...960 MHz:
• 1006...1031 MHz:
• 1032...3000 MHz:
TX Amplifiers
The TX amplifier are bipolar transistor amplifiers. They amplifies the
filtered TX signal coming from the down conversion mixer.
50
Ω
–25...+85 °C
902.5 MHz
12.5 MHz
2.3...3.0 dB
0.5...1.0 dB
1.7...2.0 dB
30...49 dB
12...18 dB
30...48 dB
3...16 dB
Page 46
TX Amplifier 1 ParametersValue
Operation frequency range:
Supply voltage:
Current consumption (nom):
Gain (min):
Noise figure (max):
Input VSWR, Zo=50 Ω (max):
Output VSWR, Zo=50 Ω (max):
TX Amplifier 2 ParametersValue
Operation frequency range:
Supply voltage:
Current consumption (nom):
Gain (min):
The power amplifier is a 3 stage MOS FET integrated module. The device
amplifies the TX signal to the desired output level. Nominal operation
voltage is 12.5 volt.
D.C. supply voltage max:
Current consumption:
Operating frequency range:
Operating case temp. range:
Output power (min):
Output power (min):
Input power (min/max):
The power control circuit consists of a power detector, a differential control
circuit and a level convert circuit, of which the latter is the interface
between the TXC signal from the RFI and the power amplifier control
signal. The differential control circuit compares the voltage from the power
detector with the TXC signal which has a raised cosinus form.
The TX power is controlled in two ’modes’. From the off condition, with an
output below –36 dBm , to an output of app. 0 dBm the power amplifier is
controlled in an open loop mode. Between app. 0 dBm to the final level,
the up– and down ramping is controlled in a closed loop mode.
Positive supply voltage:
Power control range close loop:
Dynamic range of PA from V cont. (min):
Input control voltage range (min/max):
Output control voltage range (min/max):
Frequency Synthesizers
The stable frequency source for the synthesizers and baseband circuits is
the voltage controlled temperature compensated crystal oscillator,
VCTCXO. The frequency of the VCTCXO is 26 MHz. The frequency of the
oscillator is controlled by an AFC voltage, which is generated by the
baseband circuits.
The operating frequency range of the UHF synthesizer is from 1006 to
1031 MHz. The UHF VCO is implemented as a module. The UHF
synthesizer generates the down conversion signal for the receiver and the
up conversion signal for the transmitter.
The operating frequency of the VHF VCO is 232 MHz. This signal is
divided by two in the receiver IC and feed back to the PLL circuit. This 116
MHz signal is used in the transmitter mixer and also in the receiver IC,
where the signal ones more is divided by two and used in the second
mixer of the receiver.
8.3 V
40 dB
80 dB
0.3...4.2 V
0.5...7 V
VCTCXO
The VCTCXO is a module operating at 26 MHz. The 26 MHz signal is
used as a reference frequency of the synthesizers and as the clock
frequency for the base band circuits.
ParametersValue
Operating temperature range:
Supply voltage (min/typ/max):
Supply current (max):
Output frequency (nom):
Output level (min):
ParametersValue
Harmonics (max):
Load (nom):
–25...+75 °C
4.6...4.7...4.9 V
2.0 mA
26 MHz
1.0 V
clipped sinewave
PP,
–5 dBc
10 kΩ/10 pF
Frequency stability
• temperature:±
5.0 ppm, –25...+75 °C
Page 48
Nokia Mobile Phones Ltd.
Issue 2 05/2000
PAMS Technical Documentation
NME-2A
System Module GM8
ValueParameters
VHF PLL
• supply voltage:±
• load:±
• aging:±
Nominal voltage for center freq:
Frequency control (min/max):±
Control sensitivity (max):±
Frequency tolerance (max):±
Frequency adjustment (min):±
The VHF PLL consists of the VHF VCO, PLL integrated circuit and loop
filter. The output signal, divided by to, is used for the 2nd mixer of the
receiver and for the I/Q modulator of the transmitter.
ParametersValue
Start up setting time (max):
Phase error (nom/max):
0.3 ppm, 4.7 V ±5 %
0.3 ppm, load ±10 %
1.0 ppm, year
2.35 V
8...±17 ppm, 2.35 V ±1.5 V
11 ppm, V
15 ppm, VC=2.35 V
The VHF VCO uses a bipolar transistor as a active element and a
combination of a chip coil and varactor diode as a resonance circuit.
ParametersValue
Supply voltage (min/typ/max):
Control voltage (min/max):
Supply current (typ/max):
Operation frequency (typ):
Output power level (min/typ/max):
–33 dBc
–63 dBc
–78 dBc
–78 dBc
–84 dBc
–84 dBc
4.2...4.9...5.0 V
1.0...2.9...4.0 V
6.0...8.0 mA
232 MHz
–15...–10...–5 dBm
Control voltage sensitivity (typ):
Phase noise (max)
• fo ±200 kHz
Issue 2 05/2000
9 MHz/V
–75 dB
Nokia Mobile Phones Ltd.
Page 49
NME-2A
System Module GM8
PAMS Technical Documentation
ValueParameters
• fo ±400 kHz
• fo ±600 kHz
• fo ±800 kHz
• fo ±1.6 MHz
• fo ±3.0 MHz
Pulling figure (max):±
Pushing figure (max):±
Frequency stability (max):±
Harmonics (max):
Spurious (max):
UHF Synthesizer
The UHF Synthesizer consists of a UHF VCO module, synthesizer IC and
a loop filter. The output signal is used for the 1st mixer of the receiver and
the mixer of the transmitter.
–105 dB
–117 dB
–122 dB
–132 dB
–132 dB
1.0 MHz, VSWR<2 any phase
1.0 MHz/V
1.0 MHz, over temp. range
–20...+75 °C
–5 dBc
–65 dBc
UHF VCO
ParametersValue
Start up setting time (max):
Settling time (max):
Phase error (max):
Sidebands (max)
• ±200 kHz:
• ±400 kHz:
• ±600 kHz:
• ±800 kHz:
• 1.6 MHz:
• >3.0 MHz:
The UHF VCO is a module which includes an output amplifier, too.
ParametersValue
Supply voltage (min/typ/max):
2.0 ms
800 µs
3.0 deg., rms
–30 dBc
–60 dBc
–75 dBc
–77 dBc
–87 dBc
–87 dBc
4.5...4.75...5.0 V
Page 50
Control voltage (min/max):
Supply current (max):
Operation frequency range:
Nokia Mobile Phones Ltd.
0.5...4.25 V
10.0 mA
1006...1031 MHz, 0.5<Vc<4.25 V
Issue 2 05/2000
PAMS Technical Documentation
NME-2A
System Module GM8
ValueParameters
Output power level:
Control volt. sensitivity (min/typ/
max):
Phase noise (max)
• fo ±200 kHz:
• fo ±600 kHz:
• fo ±800 kHz:
• fo ±1.6 MHz:
• fo ±3.0 MHz:
Pulling figure (max):±
Pushing figure (max):±
Frequency stability (max):±
The buffer amplifies the UHF VCO signal. The VCO output signal is
divided into the 1st mixer of the receiver and the down conversion mixer of
the transmitter. There is one buffer for TX and one buffer for RX.
Supply voltage (typ):
Supply current (typ):
Frequency range:
Input power (typ):
Output power (typ):
Harmonics (max):
PLL Circuit
The PLL is a high speed C–MOS IC. The circuit is used in the VHF–PLL
and in the UHF synthesizer.
Supply voltage (min/max):
ParametersValue
4.5 V
15 mA
1006...1031 MHz
–2 dBm
+6 dBm
–10 dBc
ParametersValue
3.0...5.5 V
Supply current (typ):
Input frequency single mode (max):
Input reference dual mode (max):
Issue 2 05/2000
Nokia Mobile Phones Ltd.
3.5 mA
220 MHz, VDD=4.5 V
65 MHz, VDD=4.5 V
Page 51
NME-2A
System Module GM8
PAMS Technical Documentation
ValueParameters
Prescaler
Input reference frequency (max):
Clocking frequency (max):
Reference input voltage (min):
Input signal voltage, dual mode (min):
Input signal voltage, single mode (min):
Phase detector output curr. (min/max):
Phase detector output volt. (min/max):
5 MHz, VDD = 4.5 V
5 MHz
100 mV
180 mV
100 mV
RMS
RMS
RMS
–6...+6 %
0.5...VDD–0.5 V
The dual modulus prescaler divide the the UHF VCO signal for the PLL
circuit. The dividing ratios used is 64 and 65. Two different types,
PMB2312 and SA701D, can be used.
PMB2312 parametersValue
Supply voltage (min/max):
Supply current (max):
Divide rations (min/max):
4.5...5.5 V
8 mA
64/65...128/129 (64/65 in use)
Toggle frequency (max):
Output voltage swing (min):
Input voltage sensitivity (min):
SA701D parametersValue
Supply voltage (min/max):
Supply current (max):
Divide rations (min/max):
Toggle frequency (max):
Output voltage swing (min):
Input voltage sensitivity (min):
1100 MHz
1.0 V
PP
25 mV
=1000 MHz
RMS
2.7...6.0 V
4.6 mA
64/65...128/129 (64/65 in use)
1100 MHz
1.6 VPP (VCC=5.0 V)
50 mVPP=1000 MHz
Page 52
Nokia Mobile Phones Ltd.
Issue 2 05/2000
PAMS Technical Documentation
System Module GM8
Interconnection Diagram of Baseband
NME-2A
HANDSET
HSE–6XA
mic
ear
sio
PCM
CODEC
MBUS
PSL+
FLASH
LOAD
DBUS
RFI
32K x 16
SRAM
A14:0,
D15:0
sio
DSP
ext
sio
mem
M2 BUS
Interface
A5:0,
D15:0
sio
sio
sio
12 bit parallel +
8 x control
ASIC
A4:0, A19:16, D7:0
A19:0,D7:0
io ext mem
io
MCU
A12:0,D7:0
E2PROM
8K X 8
RF
SIMCARD
A17:0,D7:0
1024K x 8
FLASH
A14:0,D7:0
32K x 8
SRAM
Issue 2 05/2000
Figure 4.Interconnection Diagram – Baseband
Nokia Mobile Phones Ltd.
Page 53
NME-2A
c
System Module GM8
PAMS Technical Documentation
Power Distribution Diagram of Baseband
+13.2v
car batt
load
dump
prot
6V5
VA1VL2
PCM
CODEC
Vbatt
switch
PSL+
32Kx16
SRAM
Vbatt_sw
RF pre reg
BB/RF pre reg
VL1
VL2
VA1
VA2
VREF
VL2
DSP
8V5
6V5
VA2 VL1
RFI
VL1
ASIC
VREF VL1
MCU
MCU
VREF 8V5
Vbatt 6V5
RF
Vbatt_swVbatt_sw
VL1 VA1 8V5
HANDSETAUDIO
VL1
E2PROM
8K x 8
VL1
512K x 8
FLASH
VL1
32K x 8
SRAM
Page 54
Figure 5.Power Distribution – Baseband
Nokia Mobile Phones Ltd.
Issue 2 05/2000
Issue 2 05/2000
LNA
Nokia Mobile Phones Ltd.
Figure 6.RF Blocdiagram.
947.5MHz
1006 –>
1031MHz
MIXER
Att.
(2.5dB)
1006 .. 1031MHz
UHF
VCO
DIV
64/65
4
AGC71MHz
PMB2306
UHF
PLL
PMB2403S
DIV
2
DIV
2
232MHz
VHF
VCO
13MHz
6
VCTCXO
26MHz
AGC DA TA
RXI
RXQ
VREF
AFC
SYSTEM CLK
Block Diagram of RF
PAMS Technical Documentation
Page 55
directional
coupler
Power Amplifier
POWER
CONTROL
Att.
(4dB)
902.5MHz
NOTCH
116MHz
902.5MHz
MODULATOR
PMB2200S
MIXER
I/Q
1 16MHz
2
2
2
PMB2306
RX/TX
REG.(5V)
VHF
PLL
RX/TX
REG.(8.5V)
SYNTH
REG.(5V)
4
2
DC CONT.
SYNTHPWR
TXC/TXP
PLL DATA
VBAT
6V5_RF
TXI
TXQ
System Module GM8
NME-2A
NME-2A
System Module GM8
Power Distribution Diagram of RF
RXPWR
PAMS Technical Documentation
VBAT
6.5V
SYNTHPWR
VBAT
8.5V
REGUL.
5V RX/TX
REGUL.
5V SYNTH
REGUL.
8V5_RX_TX_SW
TX (op–amp for ramping)
BB
5V_RX_TX
SYNTH
PA–MODULE
Figure 7.Power Distribution – RF
Page 56
Nokia Mobile Phones Ltd.
Issue 2 05/2000
PAMS Technical Documentation
Interconnections – RF and BB
NME-2A
System Module GM8
6V5_RF
Issue 2 05/2000
Figure 8.Interconnections – RF and BB
Nokia Mobile Phones Ltd.
6V5_RF
PA–ADJ
PAOFF
Page 57
NME-2A
System Module GM8
PAMS Technical Documentation
Part List of GM8 (EDMS Issue: 2.6)
ITEMCODEDESCRIPTIONVALUETYPE
R1001430035Chip resistor1.0 k5 % 0.063 W 0603
R1011430051Chip resistor4.7 k5 % 0.063 W 0603
R1021430035Chip resistor1.0 k5 % 0.063 W 0603
R1031430035Chip resistor1.0 k5 % 0.063 W 0603
R1041430248Chip resistor3.9 k2 % 0.063 W 0603
R1051430071Chip resistor22 k5 % 0.063 W 0603
R1061416379Melf resistor200 k1 % 0.2 W 0204
R1081430087Chip resistor100 k5 % 0.063 W 0603
R1091430039Chip resistor1.5 k5 % 0.063 W 0603
R1101430039Chip resistor1.5 k5 % 0.063 W 0603
R1111430065Chip resistor10 k5 % 0.063 W 0603
R1121430087Chip resistor100 k5 % 0.063 W 0603
R1131430001Chip resistor100 5 % 0.063 W 0603
R1141430065Chip resistor10 k5 % 0.063 W 0603
R1151430151Chip resistor10 5 % 0.063 W 0603
R1161430151Chip resistor10 5 % 0.063 W 0603
R1171430151Chip resistor10 5 % 0.063 W 0603
R1181430087Chip resistor100 k5 % 0.063 W 0603
R1191430111Chip resistor1.0 M5 % 0.063 W 0603
R1201430111Chip resistor1.0 M5 % 0.063 W 0603
R1211430087Chip resistor100 k5 % 0.063 W 0603
R1221430087Chip resistor100 k5 % 0.063 W 0603
R1231430079Chip resistor47 k5 % 0.063 W 0603
R1241430087Chip resistor100 k5 % 0.063 W 0603
R1261421115Melf resistor61.9 k1 % 0.2 W 0204
R1291430111Chip resistor1.0 M5 % 0.063 W 0603
R1301430151Chip resistor10 5 % 0.063 W 0603
R1311430009Chip resistor220 5 % 0.063 W 0603
R1321430035Chip resistor1.0 k5 % 0.063 W 0603
R1331430079Chip resistor47 k5 % 0.063 W 0603
R1341430039Chip resistor1.5 k5 % 0.063 W 0603
R1351430079Chip resistor47 k5 % 0.063 W 0603
R1361430065Chip resistor10 k5 % 0.063 W 0603
R1371430065Chip resistor10 k5 % 0.063 W 0603
R1381820024NTC resistor47 k5 % 0.2 W 0805
R1391430071Chip resistor22 k5 % 0.063 W 0603
R1401430087Chip resistor100 k5 % 0.063 W 0603
R1411430067Chip resistor15 k5 % 0.063 W 0603
R1421430049Chip resistor3.9 k5 % 0.063 W 0603
R1431430035Chip resistor1.0 k5 % 0.063 W 0603
R1441430079Chip resistor47 k5 % 0.063 W 0603
R1451430087Chip resistor100 k5 % 0.063 W 0603
R1461430071Chip resistor22 k5 % 0.063 W 0603
R1471430001Chip resistor100 5 % 0.063 W 0603
Page 58
Nokia Mobile Phones Ltd.
Issue 2 05/2000
NME-2A
PAMS Technical Documentation
R1481430015Chip resistor470 5 % 0.063 W 0603
R1491430087Chip resistor100 k5 % 0.063 W 0603
R1501430065Chip resistor10 k5 % 0.063 W 0603
R1511430035Chip resistor1.0 k5 % 0.063 W 0603
R1521430091Chip resistor150 k5 % 0.063 W 0603
R1531430051Chip resistor4.7 k5 % 0.063 W 0603
R1541430049Chip resistor3.9 k5 % 0.063 W 0603
R1551430079Chip resistor47 k5 % 0.063 W 0603
R1561430075Chip resistor33 k5 % 0.063 W 0603
R1571430075Chip resistor33 k5 % 0.063 W 0603
R1581430065Chip resistor10 k5 % 0.063 W 0603
R1591430075Chip resistor33 k5 % 0.063 W 0603
R1601430075Chip resistor33 k5 % 0.063 W 0603
R1611430001Chip resistor100 5 % 0.063 W 0603
R1621430019Chip resistor560 5 % 0.063 W 0603
R1631430051Chip resistor4.7 k5 % 0.063 W 0603
R1641430009Chip resistor220 5 % 0.063 W 0603
R1651430043Chip resistor2.2 k5 % 0.063 W 0603
R1661430091Chip resistor150 k5 % 0.063 W 0603
R1671430091Chip resistor150 k5 % 0.063 W 0603
R1681430087Chip resistor100 k5 % 0.063 W 0603
R1691430087Chip resistor100 k5 % 0.063 W 0603
R1701430079Chip resistor47 k5 % 0.063 W 0603
R1711430073Chip resistor27 k5 % 0.063 W 0603
R1721430065Chip resistor10 k5 % 0.063 W 0603
R1731430001Chip resistor100 5 % 0.063 W 0603
R1741430151Chip resistor10 5 % 0.063 W 0603
R1751430079Chip resistor47 k5 % 0.063 W 0603
R1761430095Chip resistor220 k5 % 0.063 W 0603
R1771430071Chip resistor22 k5 % 0.063 W 0603
R1781430071Chip resistor22 k5 % 0.063 W 0603
R1791430043Chip resistor2.2 k5 % 0.063 W 0603
R1801430087Chip resistor100 k5 % 0.063 W 0603
R1811430071Chip resistor22 k5 % 0.063 W 0603
R1821430071Chip resistor22 k5 % 0.063 W 0603
R1831430087Chip resistor100 k5 % 0.063 W 0603
R1841430065Chip resistor10 k5 % 0.063 W 0603
R1851430065Chip resistor10 k5 % 0.063 W 0603
R1861430065Chip resistor10 k5 % 0.063 W 0603
R1871430051Chip resistor4.7 k5 % 0.063 W 0603
R1881430151Chip resistor10 5 % 0.063 W 0603
R1891430071Chip resistor22 k5 % 0.063 W 0603
R1901430065Chip resistor10 k5 % 0.063 W 0603
R1911430001Chip resistor100 5 % 0.063 W 0603
R1921430065Chip resistor10 k5 % 0.063 W 0603
R1931430065Chip resistor10 k5 % 0.063 W 0603
R1941430065Chip resistor10 k5 % 0.063 W 0603
R1951430151Chip resistor10 5 % 0.063 W 0603
System Module GM8
Issue 2 05/2000
Nokia Mobile Phones Ltd.
Page 59
NME-2A
System Module GM8
R1961430065Chip resistor10 k5 % 0.063 W 0603
R1971430015Chip resistor470 5 % 0.063 W 0603
R1981430167Chip resistor47 5 % 0.063 W 0603
R1991430071Chip resistor22 k5 % 0.063 W 0603
R2001430035Chip resistor1.0 k5 % 0.063 W 0603
R2011430035Chip resistor1.0 k5 % 0.063 W 0603
R2021430035Chip resistor1.0 k5 % 0.063 W 0603
R2031430087Chip resistor100 k5 % 0.063 W 0603
R2041430087Chip resistor100 k5 % 0.063 W 0603
R2051430035Chip resistor1.0 k5 % 0.063 W 0603
R2061430071Chip resistor22 k5 % 0.063 W 0603
R2071430009Chip resistor220 5 % 0.063 W 0603
R2081430077Chip resistor39 k5 % 0.063 W 0603
R2091430077Chip resistor39 k5 % 0.063 W 0603
R2101430065Chip resistor10 k5 % 0.063 W 0603
R2111430047Chip resistor3.3 k5 % 0.063 W 0603
R2121430009Chip resistor220 5 % 0.063 W 0603
R2131430065Chip resistor10 k5 % 0.063 W 0603
R2141430001Chip resistor100 5 % 0.063 W 0603
R2151430035Chip resistor1.0 k5 % 0.063 W 0603
R2161430298Chip resistor1.0 M2 % 0.063 W 0603
R2181430151Chip resistor10 5 % 0.063 W 0603
R2191430065Chip resistor10 k5 % 0.063 W 0603
R2201430035Chip resistor1.0 k5 % 0.063 W 0603
R2211430065Chip resistor10 k5 % 0.063 W 0603
R2221430065Chip resistor10 k5 % 0.063 W 0603
R2231430065Chip resistor10 k5 % 0.063 W 0603
R2241430071Chip resistor22 k5 % 0.063 W 0603
R2251430071Chip resistor22 k5 % 0.063 W 0603
R2261430037Chip resistor1.2 k5 % 0.063 W 0603
R2421430049Chip resistor3.9 k5 % 0.063 W 0603
R2441430079Chip resistor47 k5 % 0.063 W 0603
R2451430079Chip resistor47 k5 % 0.063 W 0603
R2481430151Chip resistor10 5 % 0.063 W 0603
R2491430167Chip resistor47 5 % 0.063 W 0603
R2501430001Chip resistor100 5 % 0.063 W 0603
R2511430001Chip resistor100 5 % 0.063 W 0603
R2521430001Chip resistor100 5 % 0.063 W 0603
R2531430001Chip resistor100 5 % 0.063 W 0603
R2541430079Chip resistor47 k5 % 0.063 W 0603
R2551430087Chip resistor100 k5 % 0.063 W 0603
R2561430001Chip resistor100 5 % 0.063 W 0603
R2571430051Chip resistor4.7 k5 % 0.063 W 0603
R2581430001Chip resistor100 5 % 0.063 W 0603
R2591430065Chip resistor10 k5 % 0.063 W 0603
R2601430001Chip resistor100 5 % 0.063 W 0603
R2611430071Chip resistor22 k5 % 0.063 W 0603
R2621430087Chip resistor100 k5 % 0.063 W 0603
PAMS Technical Documentation
Page 60
Nokia Mobile Phones Ltd.
Issue 2 05/2000
NME-2A
PAMS Technical Documentation
R2631430087Chip resistor100 k5 % 0.063 W 0603
R2641430087Chip resistor100 k5 % 0.063 W 0603
R2651430151Chip resistor10 5 % 0.063 W 0603
R2661430001Chip resistor100 5 % 0.063 W 0603
R2671430035Chip resistor1.0 k5 % 0.063 W 0603
R2681430001Chip resistor100 5 % 0.063 W 0603
R2691430001Chip resistor100 5 % 0.063 W 0603
R2701430001Chip resistor100 5 % 0.063 W 0603
R2711430151Chip resistor10 5 % 0.063 W 0603
R2721430079Chip resistor47 k5 % 0.063 W 0603
R2731430001Chip resistor100 5 % 0.063 W 0603
R2741430079Chip resistor47 k5 % 0.063 W 0603
R2751430043Chip resistor2.2 k5 % 0.063 W 0603
R2761430087Chip resistor100 k5 % 0.063 W 0603
R2771430087Chip resistor100 k5 % 0.063 W 0603
R2781430001Chip resistor100 5 % 0.063 W 0603
R2791430151Chip resistor10 5 % 0.063 W 0603
R3001430043Chip resistor2.2 k5 % 0.063 W 0603
R3011430087Chip resistor100 k5 % 0.063 W 0603
R3021430087Chip resistor100 k5 % 0.063 W 0603
R3031430001Chip resistor100 5 % 0.063 W 0603
R3041430001Chip resistor100 5 % 0.063 W 0603
R3051430151Chip resistor10 5 % 0.063 W 0603
R3061430087Chip resistor100 k5 % 0.063 W 0603
R3071430087Chip resistor100 k5 % 0.063 W 0603
R3081430001Chip resistor100 5 % 0.063 W 0603
R3091430087Chip resistor100 k5 % 0.063 W 0603
R3101430043Chip resistor2.2 k5 % 0.063 W 0603
R3111430075Chip resistor33 k5 % 0.063 W 0603
R3121430075Chip resistor33 k5 % 0.063 W 0603
R3141430043Chip resistor2.2 k5 % 0.063 W 0603
R3151430035Chip resistor1.0 k5 % 0.063 W 0603
R3161430035Chip resistor1.0 k5 % 0.063 W 0603
R3171430035Chip resistor1.0 k5 % 0.063 W 0603
R3181430035Chip resistor1.0 k5 % 0.063 W 0603
R3191430001Chip resistor100 5 % 0.063 W 0603
R3201430065Chip resistor10 k5 % 0.063 W 0603
R3211430065Chip resistor10 k5 % 0.063 W 0603
R3221430087Chip resistor100 k5 % 0.063 W 0603
R3231430001Chip resistor100 5 % 0.063 W 0603
R3241430051Chip resistor4.7 k5 % 0.063 W 0603
R3251430087Chip resistor100 k5 % 0.063 W 0603
R3261430067Chip resistor15 k5 % 0.063 W 0603
R3271430051Chip resistor4.7 k5 % 0.063 W 0603
R3281430065Chip resistor10 k5 % 0.063 W 0603
R3291430035Chip resistor1.0 k5 % 0.063 W 0603
R3301430151Chip resistor10 5 % 0.063 W 0603
R3311430151Chip resistor10 5 % 0.063 W 0603
System Module GM8
Issue 2 05/2000
Nokia Mobile Phones Ltd.
Page 61
NME-2A
System Module GM8
R3331430035Chip resistor1.0 k5 % 0.063 W 0603
R3341430151Chip resistor10 5 % 0.063 W 0603
R3351430151Chip resistor10 5 % 0.063 W 0603
R3361430043Chip resistor2.2 k5 % 0.063 W 0603
R3371430035Chip resistor1.0 k5 % 0.063 W 0603
R3381430035Chip resistor1.0 k5 % 0.063 W 0603
R3391430035Chip resistor1.0 k5 % 0.063 W 0603
R3401430035Chip resistor1.0 k5 % 0.063 W 0603
R3411430035Chip resistor1.0 k5 % 0.063 W 0603
R3421430035Chip resistor1.0 k5 % 0.063 W 0603
R3431430065Chip resistor10 k5 % 0.063 W 0603
R3441430065Chip resistor10 k5 % 0.063 W 0603
R3451430043Chip resistor2.2 k5 % 0.063 W 0603
R3461430043Chip resistor2.2 k5 % 0.063 W 0603
R3501430015Chip resistor470 5 % 0.063 W 0603
R3511430065Chip resistor10 k5 % 0.063 W 0603
R3531430001Chip resistor100 5 % 0.063 W 0603
R3541430039Chip resistor1.5 k5 % 0.063 W 0603
R3551430151Chip resistor10 5 % 0.063 W 0603
R3561430151Chip resistor10 5 % 0.063 W 0603
R3571430151Chip resistor10 5 % 0.063 W 0603
R3581430151Chip resistor10 5 % 0.063 W 0603
R3591430035Chip resistor1.0 k5 % 0.063 W 0603
R3601430035Chip resistor1.0 k5 % 0.063 W 0603
R3611430035Chip resistor1.0 k5 % 0.063 W 0603
R3621430035Chip resistor1.0 k5 % 0.063 W 0603
R3631430035Chip resistor1.0 k5 % 0.063 W 0603
R3641430035Chip resistor1.0 k5 % 0.063 W 0603
R3651430258Chip resistor10 k2 % 0.063 W 0603
R3661430272Chip resistor39 k2 % 0.063 W 0603
R3671430276Chip resistor47 k2 % 0.063 W 0603
R3681430288Chip resistor150 k2 % 0.063 W 0603
R3691430294Chip resistor220 k2 % 0.063 W 0603
R3701430258Chip resistor10 k2 % 0.063 W 0603
R3711430258Chip resistor10 k2 % 0.063 W 0603
R3721430035Chip resistor1.0 k5 % 0.063 W 0603
R3731430270Chip resistor33 k2 % 0.063 W 0603
R3741430258Chip resistor10 k2 % 0.063 W 0603
R3751430280Chip resistor100 k2 % 0.063 W 0603
R7011430055Chip resistor6.8 k5 % 0.063 W 0603
R7021430055Chip resistor6.8 k5 % 0.063 W 0603
R7031430071Chip resistor22 k5 % 0.063 W 0603
R7041430055Chip resistor6.8 k5 % 0.063 W 0603
R7051430073Chip resistor27 k5 % 0.063 W 0603
R7061430067Chip resistor15 k5 % 0.063 W 0603
R7071430055Chip resistor6.8 k5 % 0.063 W 0603
R7081430144Chip jumper0603
R7091430151Chip resistor10 5 % 0.063 W 0603
PAMS Technical Documentation
Page 62
Nokia Mobile Phones Ltd.
Issue 2 05/2000
NME-2A
PAMS Technical Documentation
R7101430013Chip resistor330 5 % 0.063 W 0603
R7111430009Chip resistor220 5 % 0.063 W 0603
R7121430005Chip resistor150 5 % 0.063 W 0603
R7131430067Chip resistor15 k5 % 0.063 W 0603
R7141430021Chip resistor680 5 % 0.063 W 0603
R7161430001Chip resistor100 5 % 0.063 W 0603
R7171430142Chip resistor4.7 5 % 0.063 W 0603
R7181430013Chip resistor330 5 % 0.063 W 0603
R7201430151Chip resistor10 5 % 0.063 W 0603
R7211430065Chip resistor10 k5 % 0.063 W 0603
R7221430151Chip resistor10 5 % 0.063 W 0603
R7231430065Chip resistor10 k5 % 0.063 W 0603
R7241430009Chip resistor220 5 % 0.063 W 0603
R7251430013Chip resistor330 5 % 0.063 W 0603
R7261430163Chip resistor33 5 % 0.063 W 0603
R7271430065Chip resistor10 k5 % 0.063 W 0603
R7281430051Chip resistor4.7 k5 % 0.063 W 0603
R7291430065Chip resistor10 k5 % 0.063 W 0603
R7301430065Chip resistor10 k5 % 0.063 W 0603
R7311430065Chip resistor10 k5 % 0.063 W 0603
R7321430151Chip resistor10 5 % 0.063 W 0603
R7331430009Chip resistor220 5 % 0.063 W 0603
R7341430015Chip resistor470 5 % 0.063 W 0603
R7361430039Chip resistor1.5 k5 % 0.063 W 0603
R7381430075Chip resistor33 k5 % 0.063 W 0603
R7401430011Chip resistor270 5 % 0.063 W 0603
R7411430200Chip resistor120 2 % 0.063 W 0603
R7421430200Chip resistor120 2 % 0.063 W 0603
R7431430021Chip resistor680 5 % 0.063 W 0603
R7441430021Chip resistor680 5 % 0.063 W 0603
R7451430009Chip resistor220 5 % 0.063 W 0603
R7461430009Chip resistor220 5 % 0.063 W 0603
R7471430065Chip resistor10 k5 % 0.063 W 0603
R7491430065Chip resistor10 k5 % 0.063 W 0603
R7501430065Chip resistor10 k5 % 0.063 W 0603
R7511430065Chip resistor10 k5 % 0.063 W 0603
R7521430065Chip resistor10 k5 % 0.063 W 0603
R7531430065Chip resistor10 k5 % 0.063 W 0603
R7541430001Chip resistor100 5 % 0.063 W 0603
R7561430013Chip resistor330 5 % 0.063 W 0603
R7571430155Chip resistor15 5 % 0.063 W 0603
R7581430013Chip resistor330 5 % 0.063 W 0603
R7591430142Chip resistor4.7 5 % 0.063 W 0603
R7601430077Chip resistor39 k5 % 0.063 W 0603
R7621430007Chip resistor180 5 % 0.063 W 0603
R7631430013Chip resistor330 5 % 0.063 W 0603
R7641430009Chip resistor220 5 % 0.063 W 0603
R7651430155Chip resistor15 5 % 0.063 W 0603
System Module GM8
Issue 2 05/2000
Nokia Mobile Phones Ltd.
Page 63
NME-2A
System Module GM8
R7661430009Chip resistor220 5 % 0.063 W 0603
R7701430142Chip resistor4.7 5 % 0.063 W 0603
R7711430142Chip resistor4.7 5 % 0.063 W 0603
R8011430035Chip resistor1.0 k5 % 0.063 W 0603
R8021430035Chip resistor1.0 k5 % 0.063 W 0603
R8031430049Chip resistor3.9 k5 % 0.063 W 0603
R8041430001Chip resistor100 5 % 0.063 W 0603
R8051430037Chip resistor1.2 k5 % 0.063 W 0603
R8061430043Chip resistor2.2 k5 % 0.063 W 0603
R8071430075Chip resistor33 k5 % 0.063 W 0603
R8081430035Chip resistor1.0 k5 % 0.063 W 0603
R8091430055Chip resistor6.8 k5 % 0.063 W 0603
R8101430015Chip resistor470 5 % 0.063 W 0603
R8111430043Chip resistor2.2 k5 % 0.063 W 0603
R8121430159Chip resistor22 5 % 0.063 W 0603
R8131430047Chip resistor3.3 k5 % 0.063 W 0603
R8141430057Chip resistor8.2 k5 % 0.063 W 0603
R8151430009Chip resistor220 5 % 0.063 W 0603
R8161430063Chip resistor12 k5 % 0.063 W 0603
R8171430079Chip resistor47 k5 % 0.063 W 0603
R8181430011Chip resistor270 5 % 0.063 W 0603
R8191430083Chip resistor68 k5 % 0.063 W 0603
R8201430005Chip resistor150 5 % 0.063 W 0603
R8211430057Chip resistor8.2 k5 % 0.063 W 0603
R8221430043Chip resistor2.2 k5 % 0.063 W 0603
R8231430065Chip resistor10 k5 % 0.063 W 0603
R8241430210Chip resistor7.5 k2 % 0.063 W 0603
R8251430210Chip resistor7.5 k2 % 0.063 W 0603
R8261430210Chip resistor7.5 k2 % 0.063 W 0603
R8271430210Chip resistor7.5 k2 % 0.063 W 0603
R8281430065Chip resistor10 k5 % 0.063 W 0603
R8291430065Chip resistor10 k5 % 0.063 W 0603
R8301430065Chip resistor10 k5 % 0.063 W 0603
R8311430142Chip resistor4.7 5 % 0.063 W 0603
R8321430043Chip resistor2.2 k5 % 0.063 W 0603
R8331430087Chip resistor100 k5 % 0.063 W 0603
R8341430087Chip resistor100 k5 % 0.063 W 0603
R8351430071Chip resistor22 k5 % 0.063 W 0603
R8361430035Chip resistor1.0 k5 % 0.063 W 0603
R8371430053Chip resistor5.6 k5 % 0.063 W 0603
R8381430151Chip resistor10 5 % 0.063 W 0603
R8391430001Chip resistor100 5 % 0.063 W 0603
R8401430171Chip resistor68 5 % 0.063 W 0603
R8411430049Chip resistor3.9 k5 % 0.063 W 0603
R8421430065Chip resistor10 k5 % 0.063 W 0603
R8431430169Chip resistor56 5 % 0.063 W 0603
R8441430151Chip resistor10 5 % 0.063 W 0603
R8451430023Chip resistor820 5 % 0.063 W 0603
PAMS Technical Documentation
Page 64
Nokia Mobile Phones Ltd.
Issue 2 05/2000
NME-2A
PAMS Technical Documentation
R8461430001Chip resistor100 5 % 0.063 W 0603
R8471430067Chip resistor15 k5 % 0.063 W 0603
R8481430009Chip resistor220 5 % 0.063 W 0603
R8491430005Chip resistor150 5 % 0.063 W 0603
R8501430009Chip resistor220 5 % 0.063 W 0603
R8511430001Chip resistor100 5 % 0.063 W 0603
R8521430067Chip resistor15 k5 % 0.063 W 0603
R8531430171Chip resistor68 5 % 0.063 W 0603
R8551430073Chip resistor27 k5 % 0.063 W 0603
R8561430045Chip resistor2.7 k5 % 0.063 W 0603
R8571430043Chip resistor2.2 k5 % 0.063 W 0603
R8581430049Chip resistor3.9 k5 % 0.063 W 0603
R8591430075Chip resistor33 k5 % 0.063 W 0603
R8701430013Chip resistor330 5 % 0.063 W 0603
R8711430065Chip resistor10 k5 % 0.063 W 0603
R8721430087Chip resistor100 k5 % 0.063 W 0603
R8731430001Chip resistor100 5 % 0.063 W 0603
R8741430065Chip resistor10 k5 % 0.063 W 0603
R8761430043Chip resistor2.2 k5 % 0.063 W 0603
R8771430035Chip resistor1.0 k5 % 0.063 W 0603
R8781430019Chip resistor560 5 % 0.063 W 0603
R8791430065Chip resistor10 k5 % 0.063 W 0603
R9011430151Chip resistor10 5 % 0.063 W 0603
R9021430077Chip resistor39 k5 % 0.063 W 0603
R9031430035Chip resistor1.0 k5 % 0.063 W 0603
R9041430035Chip resistor1.0 k5 % 0.063 W 0603
R9051430035Chip resistor1.0 k5 % 0.063 W 0603
R9061430151Chip resistor10 5 % 0.063 W 0603
R9071430051Chip resistor4.7 k5 % 0.063 W 0603
R9081430055Chip resistor6.8 k5 % 0.063 W 0603
R9091430051Chip resistor4.7 k5 % 0.063 W 0603
R9101430009Chip resistor220 5 % 0.063 W 0603
R9111430169Chip resistor56 5 % 0.063 W 0603
R9121430151Chip resistor10 5 % 0.063 W 0603
R9131430055Chip resistor6.8 k5 % 0.063 W 0603
R9141430021Chip resistor680 5 % 0.063 W 0603
R9151430151Chip resistor10 5 % 0.063 W 0603
R9161430077Chip resistor39 k5 % 0.063 W 0603
R9171430035Chip resistor1.0 k5 % 0.063 W 0603
R9181430035Chip resistor1.0 k5 % 0.063 W 0603
R9191430035Chip resistor1.0 k5 % 0.063 W 0603
R9201430065Chip resistor10 k5 % 0.063 W 0603
R9211430065Chip resistor10 k5 % 0.063 W 0603
R9221430073Chip resistor27 k5 % 0.063 W 0603
R9231430049Chip resistor3.9 k5 % 0.063 W 0603
R9241430049Chip resistor3.9 k5 % 0.063 W 0603
R9251430159Chip resistor22 5 % 0.063 W 0603
R9261430035Chip resistor1.0 k5 % 0.063 W 0603
System Module GM8
Issue 2 05/2000
Nokia Mobile Phones Ltd.
Page 65
NME-2A
System Module GM8
R9271430069Chip resistor18 k5 % 0.063 W 0603
R9281430001Chip resistor100 5 % 0.063 W 0603
R9301430051Chip resistor4.7 k5 % 0.063 W 0603
R9311430035Chip resistor1.0 k5 % 0.063 W 0603
R9321430065Chip resistor10 k5 % 0.063 W 0603
R9331430043Chip resistor2.2 k5 % 0.063 W 0603
R9341430169Chip resistor56 5 % 0.063 W 0603
R9351430001Chip resistor100 5 % 0.063 W 0603
R9361430065Chip resistor10 k5 % 0.063 W 0603
R9371430095Chip resistor220 k5 % 0.063 W 0603
R9381430009Chip resistor220 5 % 0.063 W 0603
R9391430073Chip resistor27 k5 % 0.063 W 0603
R9401430073Chip resistor27 k5 % 0.063 W 0603
R9411430073Chip resistor27 k5 % 0.063 W 0603
R9421430021Chip resistor680 5 % 0.063 W 0603
R9431430065Chip resistor10 k5 % 0.063 W 0603
R9441430009Chip resistor220 5 % 0.063 W 0603
R9451430001Chip resistor100 5 % 0.063 W 0603
R9461430159Chip resistor22 5 % 0.063 W 0603
R9471430009Chip resistor220 5 % 0.063 W 0603
R9481430087Chip resistor100 k5 % 0.063 W 0603
C1002320083Ceramic cap.1.0 n5 % 50 V 0603
C1012320049Ceramic cap.39 p5 % 50 V 0603
C1022517801Electrol. cap.330 u20 % 25 V 10x10
C1032517801Electrol. cap.330 u20 % 25 V 10x10
C1042517801Electrol. cap.330 u20 % 25 V 10x10
C1052320049Ceramic cap.39 p5 % 50 V 0603
C1062320107Ceramic cap.10 n5 % 50 V 0603
C1072604495Tantalum cap.22 u20 % 16 V
7.3x4.4x2.8
C1082320083Ceramic cap.1.0 n5 % 50 V 0603
C1092604209Tantalum cap.1.0 u20 % 16 V
3.2x1.6x1.6
C1102604209Tantalum cap.1.0 u20 % 16 V
3.2x1.6x1.6
C1112320049Ceramic cap.39 p5 % 50 V 0603
C1122604329Tantalum cap.4.7 u20 % 10 V
3.5x2.8x1.9
C1132320083Ceramic cap.1.0 n5 % 50 V 0603
C1142320107Ceramic cap.10 n5 % 50 V 0603
C1152320107Ceramic cap.10 n5 % 50 V 0603
C1162604329Tantalum cap.4.7 u20 % 10 V
3.5x2.8x1.9
C1172604329Tantalum cap.4.7 u20 % 10 V
3.5x2.8x1.9
C1182604329Tantalum cap.4.7 u20 % 10 V
3.5x2.8x1.9
C1192604329Tantalum cap.4.7 u20 % 10 V
PAMS Technical Documentation
Page 66
Nokia Mobile Phones Ltd.
Issue 2 05/2000
NME-2A
PAMS Technical Documentation
3.5x2.8x1.9
C1202604329Tantalum cap.4.7 u20 % 10 V
3.5x2.8x1.9
C1212320049Ceramic cap.39 p5 % 50 V 0603
C1222320049Ceramic cap.39 p5 % 50 V 0603
C1232320049Ceramic cap.39 p5 % 50 V 0603
C1242320107Ceramic cap.10 n5 % 50 V 0603
C1252310784Ceramic cap.100 n10 % 25 V 0805
C1262310784Ceramic cap.100 n10 % 25 V 0805
C1272320049Ceramic cap.39 p5 % 50 V 0603
C1282517801Electrol. cap.330 u20 % 25 V 10x10
C1292604103Tantalum cap.4.7 u20 % 35 V
7.3x4.4x2.8
C1302320049Ceramic cap.39 p5 % 50 V 0603
C1312320049Ceramic cap.39 p5 % 50 V 0603
C1322320083Ceramic cap.1.0 n5 % 50 V 0603
C1332604209Tantalum cap.1.0 u20 % 16 V
3.2x1.6x1.6
C1342320107Ceramic cap.10 n5 % 50 V 0603
C1352310784Ceramic cap.100 n10 % 25 V 0805
C1362604495Tantalum cap.22 u20 % 16 V
7.3x4.4x2.8
C1372604495Tantalum cap.22 u20 % 16 V
7.3x4.4x2.8
C1382604209Tantalum cap.1.0 u20 % 16 V
3.2x1.6x1.6
C1392310784Ceramic cap.100 n10 % 25 V 0805
C1492604329Tantalum cap.4.7 u20 % 10 V
3.5x2.8x1.9
C1502310784Ceramic cap.100 n10 % 25 V 0805
C1512310784Ceramic cap.100 n10 % 25 V 0805
C1522310784Ceramic cap.100 n10 % 25 V 0805
C1532320083Ceramic cap.1.0 n5 % 50 V 0603
C1542310784Ceramic cap.100 n10 % 25 V 0805
C1552310784Ceramic cap.100 n10 % 25 V 0805
C1562320071Ceramic cap.330 p5 % 50 V 0603
C1572310784Ceramic cap.100 n10 % 25 V 0805
C1582320107Ceramic cap.10 n5 % 50 V 0603
C1592320107Ceramic cap.10 n5 % 50 V 0603
C1602320083Ceramic cap.1.0 n5 % 50 V 0603
C1612604209Tantalum cap.1.0 u20 % 16 V
3.2x1.6x1.6
C1622320049Ceramic cap.39 p5 % 50 V 0603
C1632604209Tantalum cap.1.0 u20 % 16 V
3.2x1.6x1.6
C1652604329Tantalum cap.4.7 u20 % 10 V
3.5x2.8x1.9
C1662320107Ceramic cap.10 n5 % 50 V 0603
System Module GM8
Issue 2 05/2000
Nokia Mobile Phones Ltd.
Page 67
NME-2A
System Module GM8
C1672604329Tantalum cap.4.7 u20 % 10 V
3.5x2.8x1.9
C1682320083Ceramic cap.1.0 n5 % 50 V 0603
C1692320083Ceramic cap.1.0 n5 % 50 V 0603
C1702604329Tantalum cap.4.7 u20 % 10 V
3.5x2.8x1.9
C1712517801Electrol. cap.330 u20 % 25 V 10x10
C1722320107Ceramic cap.10 n5 % 50 V 0603
C1732310784Ceramic cap.100 n10 % 25 V 0805
C1742320107Ceramic cap.10 n5 % 50 V 0603
C1752320107Ceramic cap.10 n5 % 50 V 0603
C1772320107Ceramic cap.10 n5 % 50 V 0603
C1782320059Ceramic cap.100 p5 % 50 V 0603
C1792517801Electrol. cap.330 u20 % 25 V 10x10
C1802320049Ceramic cap.39 p5 % 50 V 0603
C1812604209Tantalum cap.1.0 u20 % 16 V
3.2x1.6x1.6
C1822320049Ceramic cap.39 p5 % 50 V 0603
C1832604209Tantalum cap.1.0 u20 % 16 V
3.2x1.6x1.6
C1842310784Ceramic cap.100 n10 % 25 V 0805
C1852320083Ceramic cap.1.0 n5 % 50 V 0603
C1872310784Ceramic cap.100 n10 % 25 V 0805
C1882320049Ceramic cap.39 p5 % 50 V 0603
C1892320107Ceramic cap.10 n5 % 50 V 0603
C1912310784Ceramic cap.100 n10 % 25 V 0805
C1922310784Ceramic cap.100 n10 % 25 V 0805
C1942320049Ceramic cap.39 p5 % 50 V 0603
C1962310752Ceramic cap.10 n20 % 50 V 0805
C1972320049Ceramic cap.39 p5 % 50 V 0603
C1982320107Ceramic cap.10 n5 % 50 V 0603
C1992320107Ceramic cap.10 n5 % 50 V 0603
C2002320059Ceramic cap.100 p5 % 50 V 0603
C2012310784Ceramic cap.100 n10 % 25 V 0805
C2022310784Ceramic cap.100 n10 % 25 V 0805
C2032310784Ceramic cap.100 n10 % 25 V 0805
C2042310784Ceramic cap.100 n10 % 25 V 0805
C2052310784Ceramic cap.100 n10 % 25 V 0805
C2062310784Ceramic cap.100 n10 % 25 V 0805
C2072320097Ceramic cap.3.9 n5 % 50 V 0603
C2082320097Ceramic cap.3.9 n5 % 50 V 0603
C2092320043Ceramic cap.22 p5 % 50 V 0603
C2102320059Ceramic cap.100 p5 % 50 V 0603
C2112320043Ceramic cap.22 p5 % 50 V 0603
C2122320097Ceramic cap.3.9 n5 % 50 V 0603
C2132320059Ceramic cap.100 p5 % 50 V 0603
C2142320059Ceramic cap.100 p5 % 50 V 0603
C2152320043Ceramic cap.22 p5 % 50 V 0603
PAMS Technical Documentation
Page 68
Nokia Mobile Phones Ltd.
Issue 2 05/2000
NME-2A
PAMS Technical Documentation
C2162320059Ceramic cap.100 p5 % 50 V 0603
C2172320059Ceramic cap.100 p5 % 50 V 0603
C2182320059Ceramic cap.100 p5 % 50 V 0603
C2192320059Ceramic cap.100 p5 % 50 V 0603
C2502320083Ceramic cap.1.0 n5 % 50 V 0603
C2512310784Ceramic cap.100 n10 % 25 V 0805
C2522310784Ceramic cap.100 n10 % 25 V 0805
C2532310784Ceramic cap.100 n10 % 25 V 0805
C2542320083Ceramic cap.1.0 n5 % 50 V 0603
C2552320049Ceramic cap.39 p5 % 50 V 0603
C2562320049Ceramic cap.39 p5 % 50 V 0603
C2572320107Ceramic cap.10 n5 % 50 V 0603
C2582310784Ceramic cap.100 n10 % 25 V 0805
C2592310784Ceramic cap.100 n10 % 25 V 0805
C2602320107Ceramic cap.10 n5 % 50 V 0603
C2612320083Ceramic cap.1.0 n5 % 50 V 0603
C2622320049Ceramic cap.39 p5 % 50 V 0603
C2632320049Ceramic cap.39 p5 % 50 V 0603
C2642320107Ceramic cap.10 n5 % 50 V 0603
C2652320049Ceramic cap.39 p5 % 50 V 0603
C2662320059Ceramic cap.100 p5 % 50 V 0603
C2672320059Ceramic cap.100 p5 % 50 V 0603
C2682320059Ceramic cap.100 p5 % 50 V 0603
C2692320059Ceramic cap.100 p5 % 50 V 0603
C2702320059Ceramic cap.100 p5 % 50 V 0603
C3002310784Ceramic cap.100 n10 % 25 V 0805
C3012310784Ceramic cap.100 n10 % 25 V 0805
C3022310784Ceramic cap.100 n10 % 25 V 0805
C3042310784Ceramic cap.100 n10 % 25 V 0805
C3052320097Ceramic cap.3.9 n5 % 50 V 0603
C3062320097Ceramic cap.3.9 n5 % 50 V 0603
C3072320049Ceramic cap.39 p5 % 50 V 0603
C3082320049Ceramic cap.39 p5 % 50 V 0603
C3092320059Ceramic cap.100 p5 % 50 V 0603
C3102320059Ceramic cap.100 p5 % 50 V 0603
C3112320049Ceramic cap.39 p5 % 50 V 0603
C3132320059Ceramic cap.100 p5 % 50 V 0603
C3142320049Ceramic cap.39 p5 % 50 V 0603
C3152320059Ceramic cap.100 p5 % 50 V 0603
C3162310784Ceramic cap.100 n10 % 25 V 0805
C3172320059Ceramic cap.100 p5 % 50 V 0603
C3182320059Ceramic cap.100 p5 % 50 V 0603
C3192320059Ceramic cap.100 p5 % 50 V 0603
C3202320059Ceramic cap.100 p5 % 50 V 0603
C3212320059Ceramic cap.100 p5 % 50 V 0603
C3222320059Ceramic cap.100 p5 % 50 V 0603
C3232320059Ceramic cap.100 p5 % 50 V 0603
C3242320083Ceramic cap.1.0 n5 % 50 V 0603
System Module GM8
Issue 2 05/2000
Nokia Mobile Phones Ltd.
Page 69
NME-2A
System Module GM8
C3252320107Ceramic cap.10 n5 % 50 V 0603
C3272320049Ceramic cap.39 p5 % 50 V 0603
C3292320083Ceramic cap.1.0 n5 % 50 V 0603
C3502604209Tantalum cap.1.0 u20 % 16 V
3.2x1.6x1.6
C3512310784Ceramic cap.100 n10 % 25 V 0805
C3522604209Tantalum cap.1.0 u20 % 16 V
3.2x1.6x1.6
C3532310784Ceramic cap.100 n10 % 25 V 0805
C3542604209Tantalum cap.1.0 u20 % 16 V
3.2x1.6x1.6
C3552310784Ceramic cap.100 n10 % 25 V 0805
C3562604209Tantalum cap.1.0 u20 % 16 V
3.2x1.6x1.6
C3572310784Ceramic cap.100 n10 % 25 V 0805
C3582310784Ceramic cap.100 n10 % 25 V 0805
C3592604209Tantalum cap.1.0 u20 % 16 V
3.2x1.6x1.6
C3602310784Ceramic cap.100 n10 % 25 V 0805
C3612604209Tantalum cap.1.0 u20 % 16 V
3.2x1.6x1.6
C7022320059Ceramic cap.100 p5 % 50 V 0603
C7032320083Ceramic cap.1.0 n5 % 50 V 0603
C7042320035Ceramic cap.10 p5 % 50 V 0603
C7052320049Ceramic cap.39 p5 % 50 V 0603
C7062604209Tantalum cap.1.0 u20 % 16 V
3.2x1.6x1.6
C7072320049Ceramic cap.39 p5 % 50 V 0603
C7092320049Ceramic cap.39 p5 % 50 V 0603
C7102320025Ceramic cap.3.9 p0.25 % 50 V 0603
C7112320045Ceramic cap.27 p5 % 50 V 0603
C7122320083Ceramic cap.1.0 n5 % 50 V 0603
C7142320107Ceramic cap.10 n5 % 50 V 0603
C7152320083Ceramic cap.1.0 n5 % 50 V 0603
C7162604209Tantalum cap.1.0 u20 % 16 V
3.2x1.6x1.6
C7172604209Tantalum cap.1.0 u20 % 16 V
3.2x1.6x1.6
C7182320107Ceramic cap.10 n5 % 50 V 0603
C7192320083Ceramic cap.1.0 n5 % 50 V 0603
C7202320083Ceramic cap.1.0 n5 % 50 V 0603
C7212320083Ceramic cap.1.0 n5 % 50 V 0603
C7222320027Ceramic cap.4.7 p0.25 % 50 V 0603
C7252320083Ceramic cap.1.0 n5 % 50 V 0603
C7272320083Ceramic cap.1.0 n5 % 50 V 0603
C7282320055Ceramic cap.68 p5 % 50 V 0603
C7292320083Ceramic cap.1.0 n5 % 50 V 0603
C7322320083Ceramic cap.1.0 n5 % 50 V 0603
PAMS Technical Documentation
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Nokia Mobile Phones Ltd.
Issue 2 05/2000
NME-2A
PAMS Technical Documentation
C7332320049Ceramic cap.39 p5 % 50 V 0603
C7342320107Ceramic cap.10 n5 % 50 V 0603
C7352604209Tantalum cap.1.0 u20 % 16 V
3.2x1.6x1.6
C7362320083Ceramic cap.1.0 n5 % 50 V 0603
C7382320083Ceramic cap.1.0 n5 % 50 V 0603
C7392320083Ceramic cap.1.0 n5 % 50 V 0603
C7402320083Ceramic cap.1.0 n5 % 50 V 0603
C7412320107Ceramic cap.10 n5 % 50 V 0603
C7422320083Ceramic cap.1.0 n5 % 50 V 0603
C7432320348Ceramic cap.100 p2 % 50 V 0603
C7442320348Ceramic cap.100 p2 % 50 V 0603
C7452310470Ceramic cap.270 p5 % 50 V 0805
C7462310470Ceramic cap.270 p5 % 50 V 0805
C7472320083Ceramic cap.1.0 n5 % 50 V 0603
C7482320059Ceramic cap.100 p5 % 50 V 0603
C7492320049Ceramic cap.39 p5 % 50 V 0603
C7502320049Ceramic cap.39 p5 % 50 V 0603
C7512320049Ceramic cap.39 p5 % 50 V 0603
C7522320049Ceramic cap.39 p5 % 50 V 0603
C7532320049Ceramic cap.39 p5 % 50 V 0603
C7542320049Ceramic cap.39 p5 % 50 V 0603
C7602320049Ceramic cap.39 p5 % 50 V 0603
C7612320083Ceramic cap.1.0 n5 % 50 V 0603
C7622320049Ceramic cap.39 p5 % 50 V 0603
C7632320021Ceramic cap.2.7 p0.25 % 50 V 0603
C8012320083Ceramic cap.1.0 n5 % 50 V 0603
C8022320059Ceramic cap.100 p5 % 50 V 0603
C8032310784Ceramic cap.100 n10 % 25 V 0805
C8042320083Ceramic cap.1.0 n5 % 50 V 0603
C8052320083Ceramic cap.1.0 n5 % 50 V 0603
C8062604329Tantalum cap.4.7 u20 % 10 V
3.5x2.8x1.9
C8072320049Ceramic cap.39 p5 % 50 V 0603
C8082320049Ceramic cap.39 p5 % 50 V 0603
C8092320107Ceramic cap.10 n5 % 50 V 0603
C8102320049Ceramic cap.39 p5 % 50 V 0603
C8112320049Ceramic cap.39 p5 % 50 V 0603
C8122320063Ceramic cap.150 p5 % 50 V 0603
C8132320055Ceramic cap.68 p5 % 50 V 0603
C8142320107Ceramic cap.10 n5 % 50 V 0603
C8152320049Ceramic cap.39 p5 % 50 V 0603
C8162307816Ceramic cap.47 n20 % 25 V 0805
C8172517801Electrol. cap.330 u20 % 25 V 10x10
C8182320049Ceramic cap.39 p5 % 50 V 0603
C8192517801Electrol. cap.330 u20 % 25 V 10x10
C8202320049Ceramic cap.39 p5 % 50 V 0603
C8212320027Ceramic cap.4.7 p0.25 % 50 V 0603
System Module GM8
Issue 2 05/2000
Nokia Mobile Phones Ltd.
Page 71
NME-2A
System Module GM8
C8222320049Ceramic cap.39 p5 % 50 V 0603
C8232320083Ceramic cap.1.0 n5 % 50 V 0603
C8242320049Ceramic cap.39 p5 % 50 V 0603
C8252320019Ceramic cap.2.2 p0.25 % 50 V 0603
C8262320035Ceramic cap.10 p5 % 50 V 0603
C8272604209Tantalum cap.1.0 u20 % 16 V
3.2x1.6x1.6
C8282320083Ceramic cap.1.0 n5 % 50 V 0603
C8292320083Ceramic cap.1.0 n5 % 50 V 0603
C8302320083Ceramic cap.1.0 n5 % 50 V 0603
C8312604329Tantalum cap.4.7 u20 % 10 V
3.5x2.8x1.9
C8322320021Ceramic cap.2.7 p0.25 % 50 V 0603
C8332320049Ceramic cap.39 p5 % 50 V 0603
C8342320464Ceramic cap.180 p5 % 50 V 0603
C8352320464Ceramic cap.180 p5 % 50 V 0603
C8362320049Ceramic cap.39 p5 % 50 V 0603
C8372320027Ceramic cap.4.7 p0.25 % 50 V 0603
C8382320023Ceramic cap.3.3 p0.25 % 50 V 0603
C8392320049Ceramic cap.39 p5 % 50 V 0603
C8402320045Ceramic cap.27 p5 % 50 V 0603
C8412320035Ceramic cap.10 p5 % 50 V 0603
C8422320049Ceramic cap.39 p5 % 50 V 0603
C8432320107Ceramic cap.10 n5 % 50 V 0603
C8442604495Tantalum cap.22 u20 % 16 V
7.3x4.4x2.8
C8452320107Ceramic cap.10 n5 % 50 V 0603
C8462320049Ceramic cap.39 p5 % 50 V 0603
C8472320071Ceramic cap.330 p5 % 50 V 0603
C8482604103Tantalum cap.4.7 u20 % 35 V
7.3x4.4x2.8
C8492320083Ceramic cap.1.0 n5 % 50 V 0603
C8502604209Tantalum cap.1.0 u20 % 16 V
3.2x1.6x1.6
C8512320083Ceramic cap.1.0 n5 % 50 V 0603
C8522320039Ceramic cap.15 p5 % 50 V 0603
C8532320049Ceramic cap.39 p5 % 50 V 0603
C8542320049Ceramic cap.39 p5 % 50 V 0603
C8552320049Ceramic cap.39 p5 % 50 V 0603
C8562320049Ceramic cap.39 p5 % 50 V 0603
C8572320049Ceramic cap.39 p5 % 50 V 0603
C8582320063Ceramic cap.150 p5 % 50 V 0603
C8592320107Ceramic cap.10 n5 % 50 V 0603
C8632307816Ceramic cap.47 n20 % 25 V 0805
C8642320083Ceramic cap.1.0 n5 % 50 V 0603
C8662604329Tantalum cap.4.7 u20 % 10 V
3.5x2.8x1.9
C9012320083Ceramic cap.1.0 n5 % 50 V 0603
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NME-2A
PAMS Technical Documentation
C9022320107Ceramic cap.10 n5 % 50 V 0603
C9032604209Tantalum cap.1.0 u20 % 16 V
3.2x1.6x1.6
C9042320071Ceramic cap.330 p5 % 50 V 0603
C9052320107Ceramic cap.10 n5 % 50 V 0603
C9062320107Ceramic cap.10 n5 % 50 V 0603
C9072320083Ceramic cap.1.0 n5 % 50 V 0603
C9082320043Ceramic cap.22 p5 % 50 V 0603
C9092320037Ceramic cap.12 p5 % 50 V 0603
C9102320041Ceramic cap.18 p5 % 50 V 0603
C9112320045Ceramic cap.27 p5 % 50 V 0603
C9122320071Ceramic cap.330 p5 % 50 V 0603
C9132320071Ceramic cap.330 p5 % 50 V 0603
C9142320031Ceramic cap.6.8 p0.25 % 50 V 0603
C9152320083Ceramic cap.1.0 n5 % 50 V 0603
C9162604209Tantalum cap.1.0 u20 % 16 V
3.2x1.6x1.6
C9172604079Tantalum cap.0.22 u20 % 35 V
3.2x1.6x1.6
C9182320107Ceramic cap.10 n5 % 50 V 0603
C9192320107Ceramic cap.10 n5 % 50 V 0603
C9202604209Tantalum cap.1.0 u20 % 16 V
3.2x1.6x1.6
C9212320049Ceramic cap.39 p5 % 50 V 0603
C9222320083Ceramic cap.1.0 n5 % 50 V 0603
C9232310209Ceramic cap.2.2 n5 % 50 V 1206
C9242320059Ceramic cap.100 p5 % 50 V 0603
C9252320059Ceramic cap.100 p5 % 50 V 0603
C9262320107Ceramic cap.10 n5 % 50 V 0603
C9272320023Ceramic cap.3.3 p0.25 % 50 V 0603
C9282320021Ceramic cap.2.7 p0.25 % 50 V 0603
C9292320107Ceramic cap.10 n5 % 50 V 0603
C9302320049Ceramic cap.39 p5 % 50 V 0603
C9312320027Ceramic cap.4.7 p0.25 % 50 V 0603
C9322320023Ceramic cap.3.3 p0.25 % 50 V 0603
C9332320049Ceramic cap.39 p5 % 50 V 0603
C9342320021Ceramic cap.2.7 p0.25 % 50 V 0603
C9352320049Ceramic cap.39 p5 % 50 V 0603
C9362320049Ceramic cap.39 p5 % 50 V 0603
C9372320049Ceramic cap.39 p5 % 50 V 0603
C9382320049Ceramic cap.39 p5 % 50 V 0603
C9392320049Ceramic cap.39 p5 % 50 V 0603
C9402320049Ceramic cap.39 p5 % 50 V 0603
C9412320107Ceramic cap.10 n5 % 50 V 0603
C9422320049Ceramic cap.39 p5 % 50 V 0603
C9432320049Ceramic cap.39 p5 % 50 V 0603
C9442320083Ceramic cap.1.0 n5 % 50 V 0603
C9452604329Tantalum cap.4.7 u20 % 10 V
System Module GM8
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Page 73
NME-2A
System Module GM8
3.5x2.8x1.9
C9462320083Ceramic cap.1.0 n5 % 50 V 0603
C9472320049Ceramic cap.39 p5 % 50 V 0603
C9482320107Ceramic cap.10 n5 % 50 V 0603
C9492320083Ceramic cap.1.0 n5 % 50 V 0603
C9502320083Ceramic cap.1.0 n5 % 50 V 0603
C9512320107Ceramic cap.10 n5 % 50 V 0603
C9572320083Ceramic cap.1.0 n5 % 50 V 0603
C9582320083Ceramic cap.1.0 n5 % 50 V 0603
C9592320049Ceramic cap.39 p5 % 50 V 0603
C9602604209Tantalum cap.1.0 u20 % 16 V
L9043641520Chip coil3. Q n20 % Q=50/250 MHz
0
L9053641574Chip coil68.Q n5 % Q=40/200 MHz 0
L9063641520Chip coil3. Q n20 % Q=50/250 MHz
0
L9073641558Chip coil8. Q n10 % Q=50 0805
L9103641558Chip coil8. Q n10 % Q=50 0805
G9014352804Vco 1006–1031mhz 4.5v/10ma gGSM
G9024510038SM, VCTCXO 26mhz+–5ppm/–25c/+75c
Z7014512001Dupl 890–915/935–960mhz 39.7x14.839.7x14.8
Z7024550109Cer.filt 947.5+–12.5mhz 15.5x9.115.5x9.1
Z7034511026Saw filter71+–0.08 M14.2x8.4
Z7044510009Cer.filt 13+–0.09mhz 7.2x3.27.2x3.2
Z8014550107Cer.filt 902.5+–12.5mhz 11.9x9.511.9x9.5
Z8024557001Cer.filt 902.5+–12.5mhz 4.8x3.54.8x3.5
T7003640415Rf–transf. ml 71–130mhz 0.1w 12061206
T8023640417Rf transf.ml 800/960mhz 0.2w 12061206
V1004107027 Zener diode BZX84 5 % 16 V 0.3 W SOT23
V1014110074Schottky diodeSTPS340U40 V 3 A SOD6
V1024110014Sch. diode x 2BAS70–0770 V 15 mA SOT143
V1034106769 Zener diode BZX84 5 % 4.7 V 0.3 W SOT23
V1044200917 Transistor BC848B/BCW32npn 30 V 100 mA SOT23
V1054200877 TransistorBCX51–16pnp 45 V 1.5 A
SOT89
V1064200877 TransistorBCX51–16pnp 45 V 1.5 A
SOT89
V1074110014Sch. diode x 2BAS70–0770 V 15 mA SOT143
V1084200877 TransistorBCX51–16pnp 45 V 1.5 A
SOT89
V1094110014Sch. diode x 2BAS70–0770 V 15 mA SOT143
V1104202456MosFetIRFR9020p–ch 50 V 8 A TO252
V1114200917Transistor BC848B/BCW32npn 30 V 100 mA SOT23
V1124103492Trans. supr.15V400 A 5000 W
V1134107027Zener diode BZX845 % 16 V 0.3 W SOT23
V1154200917Transistor BC848B/BCW32npn 30 V 100 mA SOT23
V1174200909Transistor BC858B/BCW30pnp 30 V 100 mA SOT23
V1184107027Zener diode BZX84 5 % 16 V 0.3 W SOT23
V1504200917 Transistor BC848B/BCW32npn 30 V 100 mA SOT23
V1514200917 Transistor BC848B/BCW32npn 30 V 100 mA SOT23
V1524200909 Transistor BC858B/BCW30pnp 30 V 100 mA SOT23
V1534200917 Transistor BC848B/BCW32npn 30 V 100 mA SOT23
V1544200877 TransistorBCX51–16pnp 45 V 1.5 A
SOT89
V1554210017 TransistorMJD3055npn 60 V 10 A TO252
V1564110014Sch. diode x 2BAS70–0770 V 15 mA SOT143
V1574200917 Transistor BC848B/BCW32npn 30 V 100 mA SOT23
V1584200875 TransistorBCX54–16npn 45 V 1.5 A
SOT89
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System Module GM8
V1594210007 TransistorMJD2955pnp 60 V 10 A
V1604200917 Transistor BC848B/BCW32npn 30 V 100 mA SOT23
V1614200917 Transistor BC848B/BCW32npn 30 V 100 mA SOT23
V1624100285 Diode x 2 BAV9970 V 200 mA SER.SOT23
V2004110014Sch. diode x 2BAS70–0770 V 15 mA SOT143
V2014210079 Transistor BFS17npn 15 V 50 mA SOT23
V2024210079 Transistor BFS17npn 15 V 50 mA SOT23
V2054200917 Transistor BC848B/BCW32npn 30 V 100 mA SOT23
V2504200917 Transistor BC848B/BCW32npn 30 V 100 mA SOT23
V2514200917 Transistor BC848B/BCW32npn 30 V 100 mA SOT23
V3004110014Sch. diode x 2BAS70–0770 V 15 mA SOT143
V3014200917 Transistor BC848B/BCW32npn 30 V 100 mA SOT23
V3024200909 Transistor BC858B/BCW30pnp 30 V 100 mA SOT23
V3034102998 LedGreen2.2 V 1206
V3044102998 LedGreen2.2 V 1206
V3054200909 Transistor BC858B/BCW30pnp 30 V 100 mA SOT23
V3064200917 Transistor BC848B/BCW32npn 30 V 100 mA SOT23
V3074200917 Transistor BC848B/BCW32npn 30 V 100 mA SOT23
V3084200875 TransistorBCX54–16npn 45 V 1.5 A
SOT89
V3144107027 Zener diode BZX84 5 % 16 V 0.3 W SOT23
V3154107027 Zener diode BZX84 5 % 16 V 0.3 W SOT23
V3504117998Precision voltage reference 4.0964.096
V7014200917 Transistor BC848B/BCW32npn 30 V 100 mA SOT23
V7024200917 Transistor BC848B/BCW32npn 30 V 100 mA SOT23
V7034200909 Transistor BC858B/BCW30pnp 30 V 100 mA SOT23
V7044210010 Transistor BFP183 npn 12 V 65 mA SOT143
V7054201036 Transistor BFR93A npn 12 V 35 mA SOT23
V7064201036 Transistor BFR93A npn 12 V 35 mA SOT23
V7074200909 Transistor BC858B/BCW30pnp 30 V 100 mA SOT23
V7084200917 Transistor BC848B/BCW32npn 30 V 100 mA SOT23
V7094201036 Transistor BFR93A npn 12 V 35 mA SOT23
V8014200909 Transistor BC858B/BCW30pnp 30 V 100 mA SOT23
V8024200917 Transistor BC848B/BCW32npn 30 V 100 mA SOT23
V8034110014Sch. diode x 2BAS70–0770 V 15 mA SOT143
V8054200917 Transistor BC848B/BCW32npn 30 V 100 mA SOT23
V8064210010 Transistor BFP183 npn 12 V 65 mA SOT143
V8074200909 Transistor BC858B/BCW30pnp 30 V 100 mA SOT23
V8084201036 Transistor BFR93A npn 12 V 35 mA SOT23
V8094200917 Transistor BC848B/BCW32npn 30 V 100 mA SOT23
V8104210010 Transistor BFP183 npn 12 V 65 mA SOT143
V8114100285Diode x 2 BAV9970 V 200 mA SER.SOT23
V8134200917 Transistor BC848B/BCW32npn 30 V 100 mA SOT23
V9014110062Cap. diode BB53530 V 2.1/18.7PFSOD323
V9024201036 Transistor BFR93A npn 12 V 35 mA SOT23
V9034200909 Transistor BC858B/BCW30pnp 30 V 100 mA SOT23
V9044210010 Transistor BFP183 npn 12 V 65 mA SOT143
V9054200917 Transistor BC848B/BCW32npn 30 V 100 mA SOT23
PAMS Technical Documentation
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NME-2A
PAMS Technical Documentation
V9064210010 Transistor BFP183 npn 12 V 65 mA SOT143
V9074200917 Transistor BC848B/BCW32npn 30 V 100 mA SOT23
V9084200917 Transistor BC848B/BCW32npn 30 V 100 mA SOT23
D2004372212IC, ROM DSP1616–X11TQFP100
D2014346012IC, SRAM 32kx8 bit 70 ns TSO28
D2024346010IC, SRAM 32kx8 bit 70 ns TSO28
D2500240435MCU ROM SW Module