Nokia 5110 System Module 03

PAMS Technical Documentation

NSE–1 Series Transceivers

Chapter 3

System Module

Issue 04/99

NSE–1

PAMS

System Module

AMENDMENT RECORD SHEET

Amendment
Number

Date Inserted By Comments

10/98 Original

01 04/99

Technical Documentation

R.Krishnan Interconnection diagram updated

Battery charging diagram updated
UP8P added
UP8P, UP8R partslist added
UP8S partslist updated
UP8P, UP8R v. 16 & 17, schematics
Repaginated

Page 3 – 2

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NSE–1

Technical Documentation

CONTENTS

Transceiver NSE–1 3 – 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Introduction 3 – 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Functional Description 3 – 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Interconnection Diagram 3 – 8. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

System Module 3 – 9. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

External and Internal Connectors 3 – 9. . . . . . . . . . . . . . . . . . . . .

System Connector Contacts 3 – 10. . . . . . . . . . . . . . . . . . . . . . .

RF Connector Contacts 3 – 11. . . . . . . . . . . . . . . . . . . . . . . . . . .

Supply Voltages and Power Consumtion 3 – 11. . . . . . . . . . . .

Functional Description 3 – 11. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Baseband Module 3 – 12. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Block Diagram 3 – 12. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Technical Summary 3 – 12. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Bottom Connector External Contacts 3 – 14. . . . . . . . . . . . . . .

Bottom Connector Signals 3 – 14. . . . . . . . . . . . . . . . . . . . . . . .

Battery Connector 3 – 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

SIM Card Connector 3 – 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Internal Microphone 3 – 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RTC Backup Battery 3 – 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Buzzer 3 – 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Functional Description 3 – 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Distribution 3 – 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Battery charging 3 – 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Startup Charging 3 – 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Battery Overvoltage Protection 3 – 20. . . . . . . . . . . . . . . . . . . .

Battery Removal During Charging 3 – 21. . . . . . . . . . . . . . . . . .

Different PWM Frequencies ( 1Hz and 32 Hz) 3 – 22. . . . . . .

Battery Identification 3 – 23. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Battery Temperature 3 – 24. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Supply Voltage Regulators 3 – 24. . . . . . . . . . . . . . . . . . . . . . . .

Switched Mode Supply VSIM 3 – 26. . . . . . . . . . . . . . . . . . . . . .

Power Up 3 – 26. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power up with a charger 3 – 27. . . . . . . . . . . . . . . . . . . . . . . . . .

Power Up With The Power Switch (PWRONX) 3 – 27. . . . . . .

Power Up by RTC 3 – 27. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Up by IBI 3 – 28. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Acting Dead 3 – 28. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Active Mode 3 – 28. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Sleep Mode 3 – 28. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Charging 3 – 28. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Off 3 – 29. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Watchdog 3 – 29. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Audio control 3 – 30. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

System Module

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External Audio Connections 3 – 31. . . . . . . . . . . . . . . . . . . . . . .

Analog Audio Accessory Detection 3 – 32. . . . . . . . . . . . . . . . .

Headset Detection 3 – 32. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Internal Audio Connections 3 – 33. . . . . . . . . . . . . . . . . . . . . . . .

4–wire PCM Serial Interface 3 – 33. . . . . . . . . . . . . . . . . . . . . . .

Alert Signal Generation 3 – 34. . . . . . . . . . . . . . . . . . . . . . . . . . .

Digital Control 3 – 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

MAD2 3 – 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Memories 3 – 44. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Program Memory 3 – 44. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

SRAM Memory 3 – 44. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

EEPROM Memory 3 – 44. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

MCU Memory Map 3 – 44. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Flash Programming 3 – 45. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

COBBA–GJ 3 – 45. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Real Time Clock 3 – 46. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RTC backup battery charging 3 – 46. . . . . . . . . . . . . . . . . . . . . .

Vibra Alerting Device 3 – 46. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

IBI Accessories 3 – 47. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Phone Power–on by IBI 3 – 47. . . . . . . . . . . . . . . . . . . . . . . . . . .

IBI power–on by phone 3 – 47. . . . . . . . . . . . . . . . . . . . . . . . . . .

RF Module 3 – 49. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Maximum Ratings 3 – 49. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RF Frequency Plan 3 – 49. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Distribution Diagram 3 – 50. . . . . . . . . . . . . . . . . . . . . . . . . .

DC Characteristics 3 – 51. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Regulators 3 – 51. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Control Signals 3 – 51. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Functional Description 3 – 51. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Frequency synthesizers 3 – 51. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Receiver 3 – 53. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Transmitter 3 – 54. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

AGC strategy 3 – 57. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

AFC function 3 – 58. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Receiver blocks 3 – 58. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RX interstage filter 3 – 58. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1st mixer in CRFU_1a 3 – 58. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1st IF–filter 3 – 58. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Transmitter Blocks 3 – 59. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TX interstage filter 3 – 59. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power amplifier MMIC 3 – 59. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Synthesizer blocks 3 – 59. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

VHF VCO and low pass filter 3 – 59. . . . . . . . . . . . . . . . . . . . . . . .

UHF PLL 3 – 59. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

UHF PLL block in PLUSSA 3 – 59. . . . . . . . . . . . . . . . . . . . . . . . . .

Technical Documentation

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NSE–1

Technical Documentation

UHF VCO module 3 – 60. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

UHF local signal input in CRFU_1a 3 – 60. . . . . . . . . . . . . . . . . . .

Connections 3 – 60. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RF connector and antenna switch 3 – 60. . . . . . . . . . . . . . . . . . . .

Timings 3 – 63. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Synthesizer control timing 3 – 63. . . . . . . . . . . . . . . . . . . . . . . . . . .

Transmitter power switching timing diagram 3 – 65. . . . . . . . . . .

Synthesizer clocking 3 – 65. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Block Diagram of Baseband Blocks 3 – 66. . . . . . . . . . . . . . . . . . .

Parts list of UP8P (EDMS Issue 3.1) Layout 01 Code: 0201323 3 – 67
Parts list of UP8R (EDMS Issue 3.2) Layout 15 Code: 0201190 3 – 74

Parts list of UP8R (EDMS Issue 4.5) Layout 16 Code: 0201190 3 – 81. . . . . . .

Parts list of UP8R (EDMS Issue 5.6) Layout 17 Code: 0200952 3 – 88. . . . . . .

Parts list of UP8S (EDMS Issue 7.1) Layout 09 Code: 0200952 3 – 95. . . . . . .

Parts list of UP8S (EDMS Issue 8.11) Layout 16 Code: 0200952 3 – 102. . . . .

System Module

Schematic Diagrams: UP8P

Block Diagram of System/RF Blocks 3/A3–P1. . . . . . . . . . . . . . . . . . . . . .

Circuit Diagram of Baseband (Version 15.1 Edit 4) for layout 01 3/A3–P2. . . . .

Circuit Diagram of Power Supply (Version 15.1 Edit 9) for layout 01 3/A3–P3
Circuit Diagram of SIM Connectors (Version 15.1 Edit 4) for layout 01 3/A3–P4
Circuit Diagram of CPU Block (Version 15.1 Edit 15) for layout 01 3/A3–P5. . .

Circuit Diagram of Audio (Version 16 Edit 5) for layout 01 3/A3–P6. . . .

Circuit Diagram of IR Module (Version 16 Edit 4) for layout 01 3/A3–P7
Circuit Diagram of RF Block (Version 3.0 Edit 5) for layout 01 3/A3–P8.
User Interface Connector (Version 15 Edit 5) for layout 01 3/A3–P9. . .

Layout Diagram of UP8P – Top (Version 01) 3/A3–P10. . . . . . . . . . . . . . . .

Layout Diagram of UP8P – Bottom (Version 01) 3/A3–P11. . . . . . . . . . . . .

Schematic Diagrams: UP8R
Connection between RF and BB ( Version 15 Edit 2) for layout 16 3/A3–R12. . .

Circuit Diagram of Baseband (Version 15.1 Edit 4) for layout 16 3/A3–R13. . . .

Circuit Diagram of Power Supply (Version 16 Edit 5) for layout 16 3/A3–R14
Circuit Diagram of SIM Connectors (Version 15.1 Edit 2) for layout 163/A3–R15

Circuit Diagram of CPU Block (Version 15.1 Edit 6) for layout 16 3/A3–R16. . . .

Circuit Diagram of Audio (Version 16 Edit 9) for layout 16 3/A3–R17. . .
Circuit Diagram of IR Module (Version 16 Edit 3) for layout 16 3/A3–R18

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System Module

Circuit Diagram of RF Block (Version 16 Edit 6) for layout 16 3/A3–R19.
User Interface Connector (Version 15.1 Edit 4) for layout 16 3/A3–R20.

Layout Diagram of UP8R – Top (Version 16) 3/A3–R21. . . . . . . . . . . . . . . .

Layout Diagram of UP8R – Bottom (Version 16) 3/A3–R22. . . . . . . . . . . .

Connection between RF and BB ( Version 17 Edit 2) for layout 17 3/A3–R23. . .

Circuit Diagram of Baseband (Version 17.0 Edit 5) for layout 17 3/A3–R24. . . .

Circuit Diagram of Power Supply (Version 17.0 Edit 6) for layout 17 3/A3–R25
Circuit Diagram of SIM Connectors (Version 17.0 Edit 2) for layout 173/A3–R26

Circuit Diagram of CPU Block (Version 17.0 Edit 8) for layout 17 3/A3–R27. . . .

Circuit Diagram of Audio (Version 17.0 Edit 5) for layout 17 3/A3–R28. .

Circuit Diagram of IR Module (Version 17.0 Edit 4) for layout 17 3/A3–R29. . . .

Circuit Diagram of RF Block (Version 17.0 Edit 4) for layout 17 3/A3–R30

Technical Documentation

User Interface Connector (Version 17.0 Edit 4) for layout 17 3/A3–R31.

Layout Diagram of UP8R – Top (Version 17) 3/A3–R32. . . . . . . . . . . . . . . .

Layout Diagram of UP8R – Bottom (Version 16) 3/A3–R33. . . . . . . . . . . .

Schematic Diagrams: UP8S

Block Diagram of System/RF Blocks 3/A3–S1. . . . . . . . . . . . . . . . . . . . . .

Circuit Diagram of Baseband (Version 9 Edit 64) for layout 09 3/A3–S2. . . . .

Circuit Diagram of Power Supply (Version 9 Edit 216) for layout 09 3/A3–S3. .
Circuit Diagram of SIM Connectors (Version 9 Edit 54) for layout 09 3/A3–S4. .

Circuit Diagram of CPU Block (Version 9 Edit 155) for layout 09 3/A3–S5. . . . .

Circuit Diagram of Audio (Version 9 Edit 115) for layout 09 3/A3–S6. .

Circuit Diagram of IR Module (Version 9 Edit 93) for layout 09 3/A3–S7. . . . .

Circuit Diagram of RF Block (Version 9 Edit 187) for layout 09 3/A3–S8
User Interface Connector (Version 9 Edit 75) for layout 09 3/A3–S9. . .

Layout Diagram of UP8S – Top (Version 09) 3/A3–S10. . . . . . . . . . . . . . . .

Layout Diagram of UP8S – Bottom (Version 09) 3/A3–S11. . . . . . . . . . . . .

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PAMS

NSE–1

Technical Documentation

Transceiver NSE–1

Introduction

The NSE–1 is a radio transceiver unit designed for the GSM network. It is a

GSM phase 2 power class 4 transceiver providing 15 power levels with a

maximum output power of 2 W. The transceiver is a true 3 V transceiver.

The transceiver consists of System/RF module (UP8S/UP8R), User inter-

face module (UE4S) and assembly parts.

The transceiver has full graphic display and one soft key based user inter-

face.

The antenna is a fixed helix. External antenna connection is provided by

rear RF connector

Functional Description

System Module

There are six different operation modes:

– power off mode

– idle mode

– NSPS mode

– active mode

– charge mode

– local mode

In the power off mode only the circuits needed for power up are supplied.

In the idle mode circuits are powered down and only sleep clock is run-

ning.

In the No Serve Power Save mode circuits are powered down, and only

sleep clock is running if no carrier is found during the scanning period.

The purpose of this mode is to reduce power consumption in the non–

network area.

In the active mode all the circuits are supplied with power although some

parts might be in the idle state part of the time.

The charge mode is effective in parallel with all previous modes. The

charge mode itself consists of two different states, i.e. the charge and the

maintenance mode.

The local mode is used for alignment and testing.

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PAMS

System Module

Interconnection Diagram

10 9

Technical Documentation

Keypad Display

User Interface

Module

UE4S

28

6

2

Earpiece

4

SIM Battery

System/RF

Module

1

Antenna

UP8S or UP8R

or UP8P

2

Mic

System

Connector

Connector

2

Charger

RF

3 + 36

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NSE–1

Technical Documentation

System Module

External and Internal Connectors

System Module

Rubber boot

Microphone

Solderable element,

2 pcs

Contact 1

DC–jack

Contact 2

Microphone port

Contacts

3...8
Contact 9

Cable/Cradle connector,
guiding/fixing hole, 3 pcs

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NSE–1

PAMS

System Module

System Connector Contacts

Con-

tact

1 VIN Charger input volt-

DC–
JACK

DC–
JACK

Line

Sym-

bol

L_GND Charger ground

VIN Charger input volt-

Parameter Mini-

age
Charger input cur-

rent

input

age
Charger input cur-

rent

Technical Documentation

Typical

mum

7.1
720

7.24
320

0 0 0 V/ Supply ground

7.1
720

7.24
320

/ Nomi-

nal

8.4
800

7.6
370

8.4
800

7.6
370

Maxi-

mum

9.3
850

16.0
420

9.3
850

16.0
420

Unit / Notes

V/ Unloaded ACP–9 Charger
mA/ Supply current
V/ Unloaded ACP–7 Charger
mA/ Supply current

V/ Unloaded ACP–9 Charger
mA/ Supply current
V/ Unloaded ACP–7 Charger
mA/ Supply current

DC–
JACK

2 CHRG

Mic
ports

3 XMIC Input signal volt-

4 SGND Signal ground 0 0 mVrms
5 XEAR Output signal volt-

6 MBUS I/O low voltage

7 FBUS_RXInput low voltage

CHRG
CTRL

CTRL

Output high volt­age

PWM frequency
output low voltage

Output high volt­age

PWM frequency

Acoustic signal N/A N/A N/A Microphone sound ports

age

age

I/O high voltage

Input high voltage02.0

2.0

0

2.0

0

2.0

2.8

32

0.5

2.8 V/ Charger control (PWM)

32

60 1 Vpp mVrms

80 1 Vpp mVrms

0.8

2.8

0.8

2.8

V/ Charger control (PWM)
high

Hz /PWM frequency for
charger
V

high
Hz /PWM frequency for

charger

Serial bidirectional control
bus.
Baud rate 9600 Bit/s

V/ Fbus receive.
V/ Serial Data, Baud rate

9.6k–230.4kBit/s

8 FBUS_TXOutput low voltage

Output high volt­age

9 L_GND Charger ground

input

Page 3 – 10

0

2.0

0 0 0 V/ Supply ground

0.8

2.8

V/ Fbus transmit.
V/ Serial Data, Baud rate

9.6k–230.4kBit/s

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PAMS

Im edance

50ohm

tor

NSE–1

Technical Documentation

System Module

RF Connector Contacts

Con-

tact

1 EXT_ANT
2 GND

Line

Symbol

Parameter Mini-

mum

p

Typical
/ Nomi-

nal

Maxi-

mum

Unit / Notes

External antenna connec-

,

0 V DC

Supply Voltages and Power Consumtion

Connector Line Symbol Minimum Typical /

Nominal

Charging VIN 7.1 8.4 9.3 V/ Travel charger,

Charging VIN 7.25 7.6 16.0 V/ Travel charger.

Charging I / VIN 720 800 850 mA/ Travel char-

Charging I / VIN 320 370 420 mA/ Travel char-

Maximum/

Peak

Unit / Notes

ACP–9

ACP–7

ger, ACP–9

ger, ACP–7

Functional Description

The transceiver electronics consist of the Radio Module ie. RF + System
blocks, the UI PCB, the display module and audio components. The key­pad and the display module are connected to the Radio Module with a
connectors. System blocks and RF blocks are interconnected with PCB
wiring. The Transceiver is connected to accessories via a bottom system
connector with charging and accessory control.

The System blocks provide the MCU, DSP and Logic control functions in
MAD ASIC, external memories, audio processing and RF control hard­ware in COBBA ASIC. Power supply circuitry CCONT ASIC delivers oper­ating voltages both for the System and the RF blocks.

Charging control ASIC CHAPS is integrated power switch for battery
charging.

The RF block is designed for a handportable phone which operates in the
GSM system. The purpose of the RF block is to receive and demodulate
the radio frequency signal from the base station and to transmit a modu­lated RF signal to the base station. The PLUSSA ASIC is used for VHF
and PLL functions. The CRFU ASIC is used at the front end.

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PAMS

System Module

Baseband Module

Block Diagram

TX/RX SIGNALS

COBBA

UI

COBBA SUPPLY

RF SUPPLIES

CCONT

BB SUPPLY

Technical Documentation

PA SUPPLY

32kHz
CLK

SLEEP CLOCK

SIM

13MHz
CLK

SYSTEM CLOCK

AUDIOLINES

BASEBAND

Technical Summary

The baseband module consists of four asics, CHAPS, CCONT, COBBA–
GJ and MAD2, which take care of the baseband functions of NSE–1.

The baseband is running from a 2.8V power rail, which is supplied by a
power controlling asic. In the CCONT asic there are 6 individually con­trolled regulator outputs for RF–section and two outputs for the base­band. In addition there is one +5V power supply output VCP for RF–part.
The CCONT contains also a SIM interface, which supports both 3V and
5V SIM–cards. A real time clock function is integrated into the CCONT,
which utilizes the same 32kHz clock supply as the sleep clock. A backup
power supply is provided for the RTC, which keeps the real time clock
running when the main battery is removed. The backup power supply is a
rechargable polyacene battery. The backup time with this battery is mini­mum of ten minutes.

MAD
+

MEMORIES

VBAT

BATTERY

CHAPS

SYSCON

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Technical Documentation

The interface between the baseband and the RF section is handled by a
specific asic. The COBBA asic provides A/D and D/A conversion of the
in–phase and quadrature receive and transmit signal paths and also A/D
and D/A conversions of received and transmitted audio signals to and
from the UI section. The COBBA supplies the analog TXC and AFC sig­nals to rf section according to the MAD DSP digital control and converts
analog AGC into digital signal for the DSP. Data transmission between the
COBBA and the MAD is implemented using a parallel connection for high
speed signalling and a serial connection for PCM coded audio signals.
Digital speech processing is handled by the MAD asic. The COBBA asic
is a dual voltage circuit, the digital parts are running from the baseband
supply VBB and the analog parts are running from the analog supply
VCOBBA.

The baseband supports three external microphone inputs and two exter­nal earphone outputs. The inputs can be taken from an internal micro­phone, a headset microphone or from an external microphone signal
source. The microphone signals from different sources are connected to
separate inputs at the COBBA asic.

System Module

The output for the internal earphone is a dual ended type output capable
of driving a dynamic type speaker. Input and output signal source selec­tion and gain control is performed inside the COBBA asic according to
control messages from the MAD. Keypad tones, DTMF, and other audio
tones are generated and encoded by the MAD and transmitted to the
COBBA for decoding. A buzzer and an external vibra alert control signals
are generated by the MAD with separate PWM outputs.

EMC shieding is implemented using a metallized plastic B–cover with a
conductive rubber seal on the ribs. On the other side the engine is
shielded with a frame having a conductive rubber on the inner walls,
which makes a contact to a ground ring of the engine board and a
ground plane of the UI–board. Heat generated by the circuitry will be con­ducted out via the PCB ground planes.

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C

PAMS

System Module

Technical Documentation

Bottom Connector External Contacts

Contact Line Symbol Function

1 VIN Charger input voltage
DC–jack

side contact
(DC–plug ring)

DC–jack
center pin

DC–jack
side contact
(DC–plug jacket)

2 CHRG_CTRL Charger control output (from phone)
Microphone

acoustic ports
3 XMIC Accessory microphone signal input (to phone)
4 SGND Accessory signal ground

L_GND Charger ground

VIN Charger input voltage

CHRG_CTRL Charger control output (from phone)

Acoustic signal (to phone)

5 XEAR Accessory earphone signal output (from phone)
6 MBUS MBUS, bidirectional flash programming clock signal
7 FBUS_RX FBUS, unidirectional flash programming serial data input

(to phone)

8 FBUS_TX FBUS, unidirectional flash programming serial data output

(from phone)

9 L_GND Charger ground

Bottom Connector Signals

Pin Name Min Typ Max Unit Notes

1,3 VIN

2 L_GND 0 0 V Supply ground

7.25

3.25
320

7.1

3.25
720

7.6

3.6

370

8.4

3.6

800

7.95

16.9

3.95
420

9.3

3.95
850

V
V
V

mA

V
V

mA

Unloaded ACP–7 Charger (5kohms
load)

Peak output voltage (5kohms load)
Loaded output voltage (10ohms load)
Supply current

Unloaded ACP–9 Charger
Loaded output voltage (10ohms load)
Supply current

4,5 CHRG_

TRL

6 MICP N/A see section Internal microphone
7 MICN N/A see section Internal microphone

Page 3 – 14

0 0.5 V Charger control PWM low

2.0 2.85 V Charger control PWM high
32 Hz PWM frequency for a fast charger

1 99 % PWM duty cycle

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Baud rate 9600 Bit/s

Baud rate 9.6k–230.4kBit/s

Baud rate 9.6k–230.4kBit/s

NSE–1

Technical Documentation

8 XMIC

HMIC 0 3.2 29.3 mV Microphone signal

9 SGND

10 XEAR

2.0 2.2 kΩ Input AC impedance

1.47 1.55 V Mute (output DC level)

2.5 2.85 V Unmute (output DC level)

100 600 µA Bias current

System Module

NotesUnitMaxTypMinNamePin

1 Vpp Maximum signal level

58 490 mV Maximum signal level

Connected to COBBA MIC3P input
47 Ω Output AC impedance (ref. GND)
10 µF Series output capacitance

380 Ω Resistance to phone ground

47 Ω Output AC impedance (ref. GND)
10 µF Series output capacitance

16 300 Ω Load AC impedance to SGND (Head-

4.7 10 kΩ Load AC impedance to SGND (Acces-

1.0 Vpp Maximum output level (no load)
22 626 mV Output signal level
10 kΩ Load DC resistance to SGND (Acces-

16 1500 Ω Load DC resistance to SGND (Head-

2.8 V DC voltage (47k pull–up to VBB)

HEAR 28 626 mV Earphone signal (HF– HFCM)

11 MBUS 0 logic low

2.0 logic high 2.85

12 FBUS_RX 0 logic low

2.0 logic high 2.85

13 FBUS_TX 0 logic low

2.0 logic high 2.85

set)

sory)

sory)

set)

Connected to COBBA HF output

0.8 V Serial bidirectional control bus.
Phone has a 4k7 pullup resistor

0.8 V Fbus receive. Serial Data
Phone has a 220k pulldown resistor

0.5 V Fbus transmit. Serial Data
Phone has a 47k pullup resistor

14 GND 0 0.3 V Supply ground

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5.0

Maximum voltage in call state with charger

PAMS

System Module

Technical Documentation

Battery Connector

Pin Name Min Typ Max Unit Notes

1 BVOLT 3.0 3.6 4.5

5.3

2 BSI

3 BTEMP

0 2.85 V Battery size indication

2.2 18 kohm Battery indication resistor (Ni battery)
20 22 24 kohm Battery indication resistor (service battery)
27 51 kohm Battery indication resistor (4.1V Lithium

68 91 kohm Battery indication resistor (4.2V Lithium bat-

0 1.4 V Battery temperature indication

V Battery voltage

Maximum voltage in idle state with charger

Phone has 100kohm pull up resistor.

SIM Card removal detection

(Treshold is 2.4V@VBB=2.8V)

battery)

tery)

Phone has a 100k (+–5%) pullup resistor,

Battery package has a NTC pulldown resis-

tor:

47k+–5%@+25C , B=4050+–3%

2.1

5 10

1.9
90 100

0 1 kohm Local mode initialization (in production)

20 22 25 kHz PWM control to VIBRA BATTERY

4 BGND 0 0 V Battery ground

3

20

2.85
200

V

ms

V

ms

Phone power up by battery (input)

Power up pulse width

Battery power up by phone (output)

Power up pulse width

SIM Card Connector

Pin Name Parameter Min Typ Max Unit Notes

4 GND GND 0 0 V Ground

3, 5 VSIM 5V SIM Card

3V SIM Card

6 DATA 5V Vin/Vout

3V Vin/Vout

2 SIMRST 5V SIM Card

3V SIM Card

4.8

2.8

4.0
0

2.8
0

4.0

2.8

5.0

3.0
”1”

”0”
”1”
”0”
”1”
”1”

5.2

3.2

VSIM

0.5

VSIM

0.5
VSIM
VSIM

V Supply voltage

V SIM data

Trise/Tfall max 1us

V SIM reset

1 SIMCLK Frequency

Trise/Tfall

Page 3 – 16

3.25
25

MHz

ns

SIM clock

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Technical Documentation

System Module

Internal Microphone

Pin Name Min Typ Max Unit Notes

6 MICP 0.55 4.1 mV Connected to COBBA MIC2N input. The

maximum value corresponds to1 kHz, 0
dBmO network level with input amplifier
gain set to 32 dB. typical value is maxi­mum value – 16 dB.

7 MICN 0.55 4.1 mV Connected to COBBA MIC2P input. The

maximum value corresponds to1 kHz, 0
dBmO network level with input amplifier
gain set to 32 dB. typical value is maxi­mum value – 16 dB.

RTC Backup Battery

The RTC block in CCONT needs a power backup to keep the clock run­ning when the phone battery is disconnected. The backup power is sup­plied from a rechargable polyacene battery that can keep the clock run­ning minimum of 10 minutes. The backup battery is charged from the
main battery through CHAPS.

Signal Parameter Min Typ Max Unit Notes

VBACK

VBACK

Backup battery charg­ing from CHAPS

Backup battery charg­ing from CHAPS

Backup battery supply
to CCONT

Backup battery supply
to CCONT

3.02 3.15 3.28 V

100 200 500 uA Vout@VBAT–0.2V

2 3.28 V Battery capacity

65uAh

80 uA

Buzzer

Signal Maximum

output cur-

rent

BuzzPWM /

BUZZER

2mA 2.5V 0.2V 0...50 (128 lin-

Input

high level

Input

low level

Level (PWM)

range, %

ear steps)

Frequency

range, Hz

440...4700

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PAMS

System Module

Functional Description

Power Distribution

In normal operation the baseband is powered from the phone‘s battery.
The battery consists of one Lithium–Ion cell. There is also a possibility to
use batteries consisting of three Nickel Metal Hydride cells. An external
charger can be used for recharging the battery and supplying power to
the phone. The charger can be either a standard charger that can deliver
around 400 mA or so called performance charger, which can deliver sup­ply current up to 850 mA.

The baseband contains components that control power distribution to
whole phone excluding those parts that use continuous battery supply.
The battery feeds power directly to three parts of the system: CCONT,
power amplifier, and UI (buzzer and display and keyboard lights). Figure
below shows a block diagram of the power distribution.

Technical Documentation

The power management circuit CHAPS provides protection agains over­voltages, charger failures and pirate chargers etc. that would otherwise
cause damage to the phone.

PA SUPPLY

VCOBBA

COBBA

UI

VBAT

VBB

VBB

MAD

+

MEMORIES

RF SUPPLIES

CCONT

PWRONX

CNTVR

VBB
PURX

PWM

LIM

CHAPS

VSIM

VBAT

RTC

BACKUP

SIM

BATTERY

Page 3 – 18

BASEBAND

VIN

BOTTOM CONNECTOR

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Technical Documentation

Battery charging

The electrical specifications give the idle voltages produced by the ac­ceptable chargers at the DC connector input. The absolute maximum in­put voltage is 30V due to the transient suppressor that is protecting the
charger input. At phone end there is no difference between a plug–in
charger or a desktop charger. The DC–jack pins and bottom connector
charging pads are connected together inside the phone.

MAD

0R22

VBAT

MAD

CCONTINT

CCONT

ICHAR

PWM_OUT

VCHAR

GND

LIM
VOUT

CHAPS

RSENSE

PWM

GND

22k

VCH

27p

1n

TRANSCEIVER

1u

47k

4k7

1.5A

30V

27p

System Module

VIN

CHRG_CTRL

L_GND

CHARGER

NOT IN
ACP–7

Startup Charging

When a charger is connected, the CHAPS is supplying a startup current
minimum of 130mA to the phone. The startup current provides initial
charging to a phone with an empty battery. Startup circuit charges the
battery until the battery voltage level is reaches 3.0V (+/– 0.1V) and the
CCONT releases the PURX reset signal and program execution starts.
Charging mode is changed from startup charging to PWM charging that is
controlled by the MCU software. If the battery voltage reaches 3.55V
(3.75V maximum) before the program has taken control over the charg­ing, the startup current is switched off. The startup current is switched on
again when the battery voltage is sunken 100mV (nominal).

Parameter Symbol Min Typ Max Unit

VOUT Start– up mode cutoff limit Vstart 3.45 3.55 3.75 V

VOUT Start– up mode hysteresis

NOTE: Cout = 4.7 uF

Start–up regulator output current

VOUT = 0V ... Vstart

Vstarthys 80 100 200 mV

Istart 130 165 200 mA

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PAMS

System Module

Battery Overvoltage Protection

Output overvoltage protection is used to protect phone from damage.
This function is also used to define the protection cutoff voltage for differ­ent battery types (Li or Ni). The power switch is immediately turned OFF if
the voltage in VOUT rises above the selected limit VLIM1 or VLIM2.

Parameter Symbol LIM input Min Typ Max Unit

Output voltage cutoff limit

(during transmission or Li–

battery)

Output voltage cutoff limit

(no transmission or Ni–bat-

tery)

VLIM1 LOW 4.4 4.6 4.8 V

VLIM2 HIGH 4.8 5.0 5.2 V

The voltage limit (VLIM1 or VLIM2) is selected by logic LOW or logic
HIGH on the CHAPS (N101) LIM– input pin. Default value is lower limit
VLIM1.

Technical Documentation

VCH

VCH<VOUT

VOUT

VLIM1 or VLIM2

When the switch in output overvoltage situation has once turned OFF, it
stays OFF until the the battery voltage falls below VLIM1 (or VLIM2) and
PWM = LOW is detected. The switch can be turned on again by setting
PWM = HIGH.

t

t

SWITCH

PWM (32Hz)

Page 3 – 20

ON OFF

ON

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Technical Documentation

Battery Removal During Charging

Output overvoltage protection is also needed in case the main battery is
removed when charger connected or charger is connected before the bat­tery is connected to the phone.

With a charger connected, if VOUT exceeds VLIM1 (or VLIM2), CHAPS
turns switch OFF until the charger input has sunken below Vpor (nominal

3.0V, maximum 3.4V). MCU software will stop the charging (turn off
PWM) when it detects that battery has been removed. The CHAPS re­mains in protection state as long as PWM stays HIGH after the output
overvoltage situation has occured.

VCH
(Standard
Charger)

VOUT

Vpor

VLIM

4V

Vstart

Drop depends on load

& C in phone

System Module

Istart off due to VCH<Vpor

Vstarthys

PWM

SWITCH

1.1Battery removed, (standard) charger connected, VOUT rises (follows charger voltage)

2. VOUT exceeds limit VLIM(X), switch is turned immediately OFF

3.3VOUT falls (because no battery) , also VCH<Vpor (standard chargers full–rectified

4. Software sets PWM = LOW –> CHAPS does not enter PWM mode

5. PWM low –> Startup mode, startup current flows until Vstart limit reached

6. VOUT exceeds limit Vstart, Istart is turned off

7. VCH falls below Vpor

”1”

”0”

ON

OFF

2

output). When VCH > Vpor and VOUT < VLIM(X) –> switch turned on again (also PWM
is still HIGH) and VOUT again exceeds VLIM(X).

5

4

6

7

t

t

t

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PAMS

System Module

Different PWM Frequencies ( 1Hz and 32 Hz)

When a travel charger (2– wire charger) is used, the power switch is
turned ON and OFF by the PWM input when the PWM rate is 1Hz. When
PWM is HIGH, the switch is ON and the output current Iout = charger cur­rent – CHAPS supply current. When PWM is LOW, the switch is OFF and
the output current Iout = 0. To prevent the switching transients inducing
noise in audio circuitry of the phone soft switching is used.

The performance travel charger (3– wire charger) is controlled with PWM
at a frequency of 32Hz. When the PWM rate is 32Hz CHAPS keeps the
power switch continuously in the ON state.

SWITCH

ON ONON OFF OFF

Technical Documentation

PWM (1Hz)

SWITCH

PWM (32Hz)

ON

Page 3 – 22

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Technical Documentation

Battery Identification

Different battery types are identified by a pulldown resistor inside the bat­tery pack. The BSI line inside transceiver has a 100k pullup to VBB. The
MCU can identify the battery by reading the BSI line DC–voltage level
with a CCONT (N100) A/D–converter.

BATTERY

BVOLT

BTEMP

BSI

VBB

2.8V

100k

10k

System Module

TRANSCEIVER

BSI

CCONT

The battery identification line is used also for battery removal detection.
The BSI line is connected to a SIMCardDetX line of MAD2 (D200). SIM­CardDetX is a threshold detector with a nominal input switching level

0.85xVcc for a rising edge and 0.55xVcc for a falling edge. The battery
removal detection is used as a trigger to power down the SIM card before
the power is lost. The BSI contact in the battery pack is made 0.7mm
shorter than the supply voltage contacts so that there is a delay between
battery removal detection and supply power off.

Vcc

0.850.05 Vcc

0.550.05 Vcc

R

s

BGND

10n

SIMCardDetX

MAD

Issue 04/99

GND

SIMCARDDETX

S

IGOUT

Page 3 – 23

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PAMS

System Module

Battery Temperature

The battery temperature is measured with a NTC inside the battery pack.
The BTEMP line inside transceiver has a 100k pullup to VREF. The MCU
can calculate the battery temperature by reading the BTEMP line DC–
voltage level with a CCONT (N100) A/D–converter.

BATTERY

BVOLT

BSI

BTEMP

Technical Documentation

TRANSCEIVER

VREF

1.5V

100k

10k

BTEMP

CCONT

R

T

NTC

Supply Voltage Regulators

The heart of the power distrubution is the CCONT. It includes all the volt­age regulators and feeds the power to the whole system. The baseband
digital parts are powered from the VBB regulator which provides 2.8V
baseband supply. The baseband regulator is active always when the
phone is powered on. The VBB baseband regulator feeds MAD and me­mories, COBBA digital parts and the LCD driver in the UI section. There is
a separate regulator for a SIM card. The regulator is selectable between
3V and 5V and controlled by the SIMPwr line from MAD to CCONT. The
COBBA analog parts are powered from a dedicated 2.8V supply VCOB­BA. The CCONT supplies also 5V for RF. The CCONT contains a real
time clock function, which is powered from a RTC backup when the main
battery is disconnected.

BGND

1k

1k

10n

VibraPWM

MAD

MCUGenIO4

Page 3 – 24

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Technical Documentation

The RTC backup is rechargable polyacene battery, which has a capacity
of 50uAh (@3V/2V) The battery is charged from the main battery voltage
by the CHAPS when the main battery voltage is over 3.2V. The charging
current is 200uA (nominal).

Operating mode Vref RF REG VCOB-

BA

Power off Off Off Off Off Off Pull

Power on On On/Off On On On On/Off
Reset On Off

VR1 On

Sleep On Off Off On On On/Off

NOTE:

On On Off Pull

VBB VSIM SIMIF

System Module

down

down

CCONT includes also five additional 2.8V regulators providing power to
the RF section. These regulators can be controlled either by the direct
control signals from MAD or by the RF regulator control register in
CCONT which MAD can update. Below are the listed the MAD control
lines and the regulators they are controlling.

– TxPwr controls VTX regulator (VR5)
– RxPwr controls VRX regulator (VR2)
– SynthPwr controls VSYN_1 and VSYN_2 regulators (VR4 and VR3)
– VCXOPwr controls VXO regulator (VR1)
CCONT generates also a 1.5 V reference voltage VREF to COBBA,

PLUSSA and CRFU. The VREF voltage is also used as a reference to
some of the CCONT A/D converters.

In additon to the above mentioned signals MAD includes also TXP control
signal which goes to PLUSSA power control block and to the power am­plifier. The transmitter power control TXC is led from COBBA to PLUSSA.

Issue 04/99

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PAMS

System Module

Switched Mode Supply VSIM

There is a switched mode supply for SIM–interface and 5V regulator,
which supplies to RF section. SIM voltage is selected via serial IO. The
5V SMR can be switched on independently of the SIM voltage selection,
but can’t be switched off when VSIM voltage value is set to 5V.

NOTE: VSIM and V5V can give together a total of 30mA.
In the next figure the principle of the SMR / VSIM–functions is shown.

CCONT External

VBAT

Technical Documentation

V5V_4
V5V_3

V5V_2

Power Up

VSIM

The baseband is powered up by:

1. Pressing the power key, that generates a PWRONX interrupt

2. Connecting a charger to the phone. The CCONT recognizes

3. A RTC interrupt. If the real time clock is set to alarm and the

5V reg

V5V

signal from the power key to the CCONT, which starts the pow­er up procedure.

the charger from the VCHAR voltage and starts the power up
procedure.

phone is switched off, the RTC generates an interrupt signal,
when the alarm is gone off. The RTC interrupt signal is con­nected to the PWRONX line to give a power on signal to the
CCONT just like the power key.

5/3V

5V

Page 3 – 26

4. A battery interrupt. Intelligent battery packs have a possibility
to power up the phone. When the battery gives a short (10ms)
voltage pulse through the BTEMP pin, the CCONT wakes up
and starts the power on procedure.

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Technical Documentation

Power up with a charger

When the charger is connected CCONT will switch on the CCONT digital
voltage as soon as the battery voltage exeeds 3.0V. The reset for
CCONT’s digital parts is released when the operating voltage is stabilized
( 50 us from switching on the voltages). Operating voltage for VCXO is
also switched on. The counter in CCONT digital section will keep MAD in
reset for 62 ms (PURX) to make sure that the clock provided by VCXO is
stable. After this delay MAD reset is relased, and VCXO –control
(SLEEPX) is given to MAD. The diagram assumes empty battery, but the
situation would be the same with full battery:

When the phone is powered up with an empty battery pack using the
standard charger, the charger may not supply enough current for stan­dard powerup procedure and the powerup must be delayed.

Power Up With The Power Switch (PWRONX)

When the power on switch is pressed the PWRONX signal will go low.
CCONT will switch on the CCONT digital section and VCXO as was the
case with the charger driven power up. If PWRONX is low when the 64
ms delay expires, PURX is released and SLEEPX control goes to MAD. If
PWRONX is not low when 64 ms expires, PURX will not be released, and
CCONT will go to power off ( digital section will send power off signal to
analog parts)

System Module

12 3

1:Power switch pressed ==> Digital voltages on in CCONT (VBB)
2: CCONT digital reset released. VCXO turned on
3: 62 ms delay to see if power switch is still pressed.

Power Up by RTC

RTC ( internal in CCONT) can power the phone up by changing RTCPwr to
logical ”1”. RTCPwr is an internal signal from the CCONT digital section.

SLEEPX

PURX

CCPURX

PWRONX

VR1,VR6
VBB (2.8V)

Vchar

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PAMS

System Module

Power Up by IBI

IBI can power CCONT up by sending a short pulse to logical ”1”. RTCPwr is
an internal signal from the CCONT digital section.

Acting Dead

If the phone is off when the charger is connected, the phone is powered
on but enters a state called ”acting dead”. To the user the phone acts as if
it was switched off. A battery charging alert is given and/or a battery
charging indication on the display is shown to acknowledge the user that
the battery is being charged.

Active Mode

In the active mode the phone is in normal operation, scanning for chan­nels, listening to a base station, transmitting and processing information.
All the CCONT regulators are operating. There are several substates in
the active mode depending on if the phone is in burst reception, burst
transmission, if DSP is working etc..

Technical Documentation

Sleep Mode

In the sleep mode, all the regulators except the baseband VBB and the
SIM card VSIM regulators are off. Sleep mode is activated by the MAD
after MCU and DSP clocks have been switched off. The voltage regula­tors for the RF section are switched off and the VCXO power control,
VCXOPwr is set low. In this state only the 32 kHz sleep clock oscillator in
CCONT is running. The flash memory power down input is connected to
the ExtSysResetX signal, and the flash is deep powered down during the
sleep mode.

The sleep mode is exited either by the expiration of a sleep clock counter
in the MAD or by some external interrupt, generated by a charger con­nection, key press, headset connection etc. The MAD starts the wake up
sequence and sets the VCXOPwr and ExtSysResetX control high. After
VCXO settling time other regulators and clocks are enabled for active
mode.

If the battery pack is disconnect during the sleep mode, the CCONT pulls
the SIM interface lines low as there is no time to wake up the MCU.

Charging

Page 3 – 28

Charging can be performed in any operating mode. The charging algo­rithm is dependent on the used battery technology. The battery type is in­dicated by a resistor inside the battery pack. The resistor value corre­sponds to a specific battery capacity. This capacity value is related to the
battery technology as different capacity values are achieved by using dif­ferent battery technology.

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Technical Documentation

The battery voltage, temperature, size and current are measured by the
CCONT controlled by the charging software running in the MAD.

The power management circuitry controls the charging current delivered
from the charger to the battery. Charging is controlled with a PWM input sig­nal, generated by the CCONT. The PWM pulse width is controlled by the
MAD and sent to the CCONT through a serial data bus. The battery voltage
rise is limited by turning the CHAPS switch off when the battery voltage has
reached 4.2V (LiIon) or 5.2V (NiMH, 5V in call mode). Charging current is
monitored by measuring the voltage drop across a 220mohm resistor.

Power Off

The baseband is powered down by:

1. Pressing the power key, that is monitored by the MAD via key­board line (row 4), which starts the power down procedure.

2. If the battery voltage is dropped below the operation limit, ei­ther by not charging it or by removing the battery.

System Module

Watchdog

3. Letting the CCONT watchdog expire, which switches off all
CCONT regulators and the phone is powered down.

4. Setting the real time clock to power off the phone by a timer.
The RTC generates an interrupt signal, when the alarm is gone
off. The RTC interrupt signal is connected to the PWRONX line
to give a power off signal to the CCONT just like the power key.

The power down is controlled by the MAD. When the power key has been
pressed long enough or the battery voltage is dropped below the limit the
MCU initiates a power down procedure and disconnects the SIM power.
Then the MCU outputs a system reset signal and resets the DSP. If there is
no charger connected the MCU writes a short delay to CCONT watchdog
and resets itself. After the set delay the CCONT watchdog expires, which
activates the PURX and all regulators are switched off and the phone is
powered down by the CCONT.

If a charger is connected when the power key is pressed the phone en­ters into the acting dead mode.

The Watchdog block inside CCONT contains a watchdog counter and
some additional logic which are used for controlling the power on and
power off procedures of CCONT. Watchdog output is disabled when
WDDisX pin is tied low. The WD-counter runs during that time, though.
Watchdog counter is reset internally to 32s at power up. Normally it is re­set by MAD writing a control word to the WDReg. Watchdog counter can
be disabled b grounding CCONT (N100) pin 29.

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PAMS

System Module

Audio control

Bias +
EMC

MICP/N

EMC + Acc.

Interf.

XMIC

System

SGND

Connector

XEAR

EMC

Technical Documentation

The audio control and processing is taken care by the COBBA–GJ, which
contains the audio and RF codecs, and the MAD2, which contains the
MCU, ASIC and DSP blocks handling and processing the audio signals. A
detailed audio specification can be found from document

DSP

MAD

MCU

Buzzer
Driver
Circuit

Buzzer

MIC2
MIC1
MIC3

HFCM

AuxOut

HF
EAR

Preamp

Amp Multipl.

Multipl.Premult.

COBBA

Pre
& LP

LP

A

D

D

A

The baseband supports three microphone inputs and two earphone out­puts. The inputs can be taken from an internal microphone, a headset mi­crophone or from an external microphone signal source. The microphone
signals from different sources are connected to separate inputs at the
COBBA–GJ asic. Inputs for the microphone signals are differential type.

The MIC1 inputs are used for a headset microphone that can be con­nected directly to the system connector. The internal microphone is con­nected to MIC2 inputs and an external pre–amplified microphone (hand­set/handfree) signal is connected to the MIC3 inputs. In COBBA there are
also three audio signal outputs of which dual ended EAR lines are used
for internal earpiece and HF line for accessory audio output. The third au­dio output AUXOUT is used only for bias supply to the headset micro­phone. As a difference to DCT2 generation the SGND ( = HFCM at COB­BA) does not supply audio signal (only common mode). Therefore there
are no electrical loopback echo from downlink to uplink.

The output for the internal earphone is a dual ended type output capable
of driving a dynamic type speaker. The output for the external accessory
and the headset is single ended with a dedicated signal ground SGND.
Input and output signal source selection and gain control is performed in­side the COBBA–GJ asic according to control messages from the MAD2.
Keypad tones, DTMF, and other audio tones are generated and encoded
by the MAD2 and transmitted to the COBBA–GJ for decoding.

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Issue 04/99