PAMS Technical Documentation
NSE–1 Series Transceivers
Chapter 3
System Module
Issue 04/99
NSE–1
PAMS
System Module
AMENDMENT RECORD SHEET
Amendment
Number
Date Inserted By Comments
10/98 Original
01 04/99
Technical Documentation
R.Krishnan Interconnection diagram updated
Battery charging diagram updated
UP8P added
UP8P, UP8R partslist added
UP8S partslist updated
UP8P, UP8R v. 16 & 17, schematics
Repaginated
Page 3 – 2
Issue 04/99
PAMS
NSE–1
Technical Documentation
CONTENTS
Transceiver NSE–1 3 – 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Introduction 3 – 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Functional Description 3 – 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Interconnection Diagram 3 – 8. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
System Module 3 – 9. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
External and Internal Connectors 3 – 9. . . . . . . . . . . . . . . . . . . . .
System Connector Contacts 3 – 10. . . . . . . . . . . . . . . . . . . . . . .
RF Connector Contacts 3 – 11. . . . . . . . . . . . . . . . . . . . . . . . . . .
Supply Voltages and Power Consumtion 3 – 11. . . . . . . . . . . .
Functional Description 3 – 11. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Baseband Module 3 – 12. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Block Diagram 3 – 12. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Technical Summary 3 – 12. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Bottom Connector External Contacts 3 – 14. . . . . . . . . . . . . . .
Bottom Connector Signals 3 – 14. . . . . . . . . . . . . . . . . . . . . . . .
Battery Connector 3 – 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SIM Card Connector 3 – 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Internal Microphone 3 – 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RTC Backup Battery 3 – 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Buzzer 3 – 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Functional Description 3 – 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Distribution 3 – 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Battery charging 3 – 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Startup Charging 3 – 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Battery Overvoltage Protection 3 – 20. . . . . . . . . . . . . . . . . . . .
Battery Removal During Charging 3 – 21. . . . . . . . . . . . . . . . . .
Different PWM Frequencies ( 1Hz and 32 Hz) 3 – 22. . . . . . .
Battery Identification 3 – 23. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Battery Temperature 3 – 24. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Supply Voltage Regulators 3 – 24. . . . . . . . . . . . . . . . . . . . . . . .
Switched Mode Supply VSIM 3 – 26. . . . . . . . . . . . . . . . . . . . . .
Power Up 3 – 26. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power up with a charger 3 – 27. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Up With The Power Switch (PWRONX) 3 – 27. . . . . . .
Power Up by RTC 3 – 27. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Up by IBI 3 – 28. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Acting Dead 3 – 28. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Active Mode 3 – 28. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Sleep Mode 3 – 28. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Charging 3 – 28. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Off 3 – 29. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Watchdog 3 – 29. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Audio control 3 – 30. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
System Module
Issue 04/99
Page 3 – 3
NSE–1
PAMS
System Module
External Audio Connections 3 – 31. . . . . . . . . . . . . . . . . . . . . . .
Analog Audio Accessory Detection 3 – 32. . . . . . . . . . . . . . . . .
Headset Detection 3 – 32. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Internal Audio Connections 3 – 33. . . . . . . . . . . . . . . . . . . . . . . .
4–wire PCM Serial Interface 3 – 33. . . . . . . . . . . . . . . . . . . . . . .
Alert Signal Generation 3 – 34. . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Control 3 – 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MAD2 3 – 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Memories 3 – 44. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Program Memory 3 – 44. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SRAM Memory 3 – 44. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EEPROM Memory 3 – 44. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MCU Memory Map 3 – 44. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Flash Programming 3 – 45. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
COBBA–GJ 3 – 45. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Real Time Clock 3 – 46. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RTC backup battery charging 3 – 46. . . . . . . . . . . . . . . . . . . . . .
Vibra Alerting Device 3 – 46. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IBI Accessories 3 – 47. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phone Power–on by IBI 3 – 47. . . . . . . . . . . . . . . . . . . . . . . . . . .
IBI power–on by phone 3 – 47. . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Module 3 – 49. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Ratings 3 – 49. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Frequency Plan 3 – 49. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Distribution Diagram 3 – 50. . . . . . . . . . . . . . . . . . . . . . . . . .
DC Characteristics 3 – 51. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Regulators 3 – 51. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Control Signals 3 – 51. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Functional Description 3 – 51. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Frequency synthesizers 3 – 51. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Receiver 3 – 53. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Transmitter 3 – 54. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AGC strategy 3 – 57. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AFC function 3 – 58. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Receiver blocks 3 – 58. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RX interstage filter 3 – 58. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1st mixer in CRFU_1a 3 – 58. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1st IF–filter 3 – 58. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Transmitter Blocks 3 – 59. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TX interstage filter 3 – 59. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power amplifier MMIC 3 – 59. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Synthesizer blocks 3 – 59. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VHF VCO and low pass filter 3 – 59. . . . . . . . . . . . . . . . . . . . . . . .
UHF PLL 3 – 59. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UHF PLL block in PLUSSA 3 – 59. . . . . . . . . . . . . . . . . . . . . . . . . .
Technical Documentation
Page 3 – 4
Issue 04/99
PAMS
NSE–1
Technical Documentation
UHF VCO module 3 – 60. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UHF local signal input in CRFU_1a 3 – 60. . . . . . . . . . . . . . . . . . .
Connections 3 – 60. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF connector and antenna switch 3 – 60. . . . . . . . . . . . . . . . . . . .
Timings 3 – 63. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Synthesizer control timing 3 – 63. . . . . . . . . . . . . . . . . . . . . . . . . . .
Transmitter power switching timing diagram 3 – 65. . . . . . . . . . .
Synthesizer clocking 3 – 65. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Block Diagram of Baseband Blocks 3 – 66. . . . . . . . . . . . . . . . . . .
Parts list of UP8P (EDMS Issue 3.1) Layout 01 Code: 0201323 3 – 67
Parts list of UP8R (EDMS Issue 3.2) Layout 15 Code: 0201190 3 – 74
Parts list of UP8R (EDMS Issue 4.5) Layout 16 Code: 0201190 3 – 81. . . . . . .
Parts list of UP8R (EDMS Issue 5.6) Layout 17 Code: 0200952 3 – 88. . . . . . .
Parts list of UP8S (EDMS Issue 7.1) Layout 09 Code: 0200952 3 – 95. . . . . . .
Parts list of UP8S (EDMS Issue 8.11) Layout 16 Code: 0200952 3 – 102. . . . .
System Module
Schematic Diagrams: UP8P
Block Diagram of System/RF Blocks 3/A3–P1. . . . . . . . . . . . . . . . . . . . . .
Circuit Diagram of Baseband (Version 15.1 Edit 4) for layout 01 3/A3–P2. . . . .
Circuit Diagram of Power Supply (Version 15.1 Edit 9) for layout 01 3/A3–P3
Circuit Diagram of SIM Connectors (Version 15.1 Edit 4) for layout 01 3/A3–P4
Circuit Diagram of CPU Block (Version 15.1 Edit 15) for layout 01 3/A3–P5. . .
Circuit Diagram of Audio (Version 16 Edit 5) for layout 01 3/A3–P6. . . .
Circuit Diagram of IR Module (Version 16 Edit 4) for layout 01 3/A3–P7
Circuit Diagram of RF Block (Version 3.0 Edit 5) for layout 01 3/A3–P8.
User Interface Connector (Version 15 Edit 5) for layout 01 3/A3–P9. . .
Layout Diagram of UP8P – Top (Version 01) 3/A3–P10. . . . . . . . . . . . . . . .
Layout Diagram of UP8P – Bottom (Version 01) 3/A3–P11. . . . . . . . . . . . .
Schematic Diagrams: UP8R
Connection between RF and BB ( Version 15 Edit 2) for layout 16 3/A3–R12. . .
Circuit Diagram of Baseband (Version 15.1 Edit 4) for layout 16 3/A3–R13. . . .
Circuit Diagram of Power Supply (Version 16 Edit 5) for layout 16 3/A3–R14
Circuit Diagram of SIM Connectors (Version 15.1 Edit 2) for layout 163/A3–R15
Circuit Diagram of CPU Block (Version 15.1 Edit 6) for layout 16 3/A3–R16. . . .
Circuit Diagram of Audio (Version 16 Edit 9) for layout 16 3/A3–R17. . .
Circuit Diagram of IR Module (Version 16 Edit 3) for layout 16 3/A3–R18
Issue 04/99
Page 3 – 5
NSE–1
PAMS
System Module
Circuit Diagram of RF Block (Version 16 Edit 6) for layout 16 3/A3–R19.
User Interface Connector (Version 15.1 Edit 4) for layout 16 3/A3–R20.
Layout Diagram of UP8R – Top (Version 16) 3/A3–R21. . . . . . . . . . . . . . . .
Layout Diagram of UP8R – Bottom (Version 16) 3/A3–R22. . . . . . . . . . . .
Connection between RF and BB ( Version 17 Edit 2) for layout 17 3/A3–R23. . .
Circuit Diagram of Baseband (Version 17.0 Edit 5) for layout 17 3/A3–R24. . . .
Circuit Diagram of Power Supply (Version 17.0 Edit 6) for layout 17 3/A3–R25
Circuit Diagram of SIM Connectors (Version 17.0 Edit 2) for layout 173/A3–R26
Circuit Diagram of CPU Block (Version 17.0 Edit 8) for layout 17 3/A3–R27. . . .
Circuit Diagram of Audio (Version 17.0 Edit 5) for layout 17 3/A3–R28. .
Circuit Diagram of IR Module (Version 17.0 Edit 4) for layout 17 3/A3–R29. . . .
Circuit Diagram of RF Block (Version 17.0 Edit 4) for layout 17 3/A3–R30
Technical Documentation
User Interface Connector (Version 17.0 Edit 4) for layout 17 3/A3–R31.
Layout Diagram of UP8R – Top (Version 17) 3/A3–R32. . . . . . . . . . . . . . . .
Layout Diagram of UP8R – Bottom (Version 16) 3/A3–R33. . . . . . . . . . . .
Schematic Diagrams: UP8S
Block Diagram of System/RF Blocks 3/A3–S1. . . . . . . . . . . . . . . . . . . . . .
Circuit Diagram of Baseband (Version 9 Edit 64) for layout 09 3/A3–S2. . . . .
Circuit Diagram of Power Supply (Version 9 Edit 216) for layout 09 3/A3–S3. .
Circuit Diagram of SIM Connectors (Version 9 Edit 54) for layout 09 3/A3–S4. .
Circuit Diagram of CPU Block (Version 9 Edit 155) for layout 09 3/A3–S5. . . . .
Circuit Diagram of Audio (Version 9 Edit 115) for layout 09 3/A3–S6. .
Circuit Diagram of IR Module (Version 9 Edit 93) for layout 09 3/A3–S7. . . . .
Circuit Diagram of RF Block (Version 9 Edit 187) for layout 09 3/A3–S8
User Interface Connector (Version 9 Edit 75) for layout 09 3/A3–S9. . .
Layout Diagram of UP8S – Top (Version 09) 3/A3–S10. . . . . . . . . . . . . . . .
Layout Diagram of UP8S – Bottom (Version 09) 3/A3–S11. . . . . . . . . . . . .
Page 3 – 6
Issue 04/99
PAMS
NSE–1
Technical Documentation
Transceiver NSE–1
Introduction
The NSE–1 is a radio transceiver unit designed for the GSM network. It is a
GSM phase 2 power class 4 transceiver providing 15 power levels with a
maximum output power of 2 W. The transceiver is a true 3 V transceiver.
The transceiver consists of System/RF module (UP8S/UP8R), User inter-
face module (UE4S) and assembly parts.
The transceiver has full graphic display and one soft key based user inter-
face.
The antenna is a fixed helix. External antenna connection is provided by
rear RF connector
Functional Description
System Module
There are six different operation modes:
– power off mode
– idle mode
– NSPS mode
– active mode
– charge mode
– local mode
In the power off mode only the circuits needed for power up are supplied.
In the idle mode circuits are powered down and only sleep clock is run-
ning.
In the No Serve Power Save mode circuits are powered down, and only
sleep clock is running if no carrier is found during the scanning period.
The purpose of this mode is to reduce power consumption in the non–
network area.
In the active mode all the circuits are supplied with power although some
parts might be in the idle state part of the time.
The charge mode is effective in parallel with all previous modes. The
charge mode itself consists of two different states, i.e. the charge and the
maintenance mode.
The local mode is used for alignment and testing.
Issue 04/99
Page 3 – 7
NSE–1
PAMS
System Module
Interconnection Diagram
10 9
Technical Documentation
Keypad Display
User Interface
Module
UE4S
28
6
2
Earpiece
4
SIM Battery
System/RF
Module
1
Antenna
UP8S or UP8R
or UP8P
2
Mic
System
Connector
Connector
2
Charger
RF
3 + 36
Page 3 – 8
Issue 04/99
PAMS
NSE–1
Technical Documentation
System Module
External and Internal Connectors
System Module
Rubber boot
Microphone
Solderable element,
2 pcs
Contact 1
DC–jack
Contact 2
Microphone port
Contacts
3...8
Contact 9
Cable/Cradle connector,
guiding/fixing hole, 3 pcs
Issue 04/99
Page 3 – 9
NSE–1
PAMS
System Module
System Connector Contacts
Con-
tact
1 VIN Charger input volt-
DC–
JACK
DC–
JACK
Line
Sym-
bol
L_GND Charger ground
VIN Charger input volt-
Parameter Mini-
age
Charger input cur-
rent
input
age
Charger input cur-
rent
Technical Documentation
Typical
mum
7.1
720
7.24
320
0 0 0 V/ Supply ground
7.1
720
7.24
320
/ Nomi-
nal
8.4
800
7.6
370
8.4
800
7.6
370
Maxi-
mum
9.3
850
16.0
420
9.3
850
16.0
420
Unit / Notes
V/ Unloaded ACP–9 Charger
mA/ Supply current
V/ Unloaded ACP–7 Charger
mA/ Supply current
V/ Unloaded ACP–9 Charger
mA/ Supply current
V/ Unloaded ACP–7 Charger
mA/ Supply current
DC–
JACK
2 CHRG
Mic
ports
3 XMIC Input signal volt-
4 SGND Signal ground 0 0 mVrms
5 XEAR Output signal volt-
6 MBUS I/O low voltage
7 FBUS_RXInput low voltage
CHRG
CTRL
CTRL
Output high voltage
PWM frequency
output low voltage
Output high voltage
PWM frequency
Acoustic signal N/A N/A N/A Microphone sound ports
age
age
I/O high voltage
Input high voltage02.0
2.0
0
2.0
0
2.0
2.8
32
0.5
2.8 V/ Charger control (PWM)
32
60 1 Vpp mVrms
80 1 Vpp mVrms
0.8
2.8
0.8
2.8
V/ Charger control (PWM)
high
Hz /PWM frequency for
charger
V
high
Hz /PWM frequency for
charger
Serial bidirectional control
bus.
Baud rate 9600 Bit/s
V/ Fbus receive.
V/ Serial Data, Baud rate
9.6k–230.4kBit/s
8 FBUS_TXOutput low voltage
Output high voltage
9 L_GND Charger ground
input
Page 3 – 10
0
2.0
0 0 0 V/ Supply ground
0.8
2.8
V/ Fbus transmit.
V/ Serial Data, Baud rate
9.6k–230.4kBit/s
Issue 04/99
PAMS
Im edance
50ohm
tor
NSE–1
Technical Documentation
System Module
RF Connector Contacts
Con-
tact
1 EXT_ANT
2 GND
Line
Symbol
Parameter Mini-
mum
p
Typical
/ Nomi-
nal
Maxi-
mum
Unit / Notes
External antenna connec-
,
0 V DC
Supply Voltages and Power Consumtion
Connector Line Symbol Minimum Typical /
Nominal
Charging VIN 7.1 8.4 9.3 V/ Travel charger,
Charging VIN 7.25 7.6 16.0 V/ Travel charger.
Charging I / VIN 720 800 850 mA/ Travel char-
Charging I / VIN 320 370 420 mA/ Travel char-
Maximum/
Peak
Unit / Notes
ACP–9
ACP–7
ger, ACP–9
ger, ACP–7
Functional Description
The transceiver electronics consist of the Radio Module ie. RF + System
blocks, the UI PCB, the display module and audio components. The keypad and the display module are connected to the Radio Module with a
connectors. System blocks and RF blocks are interconnected with PCB
wiring. The Transceiver is connected to accessories via a bottom system
connector with charging and accessory control.
The System blocks provide the MCU, DSP and Logic control functions in
MAD ASIC, external memories, audio processing and RF control hardware in COBBA ASIC. Power supply circuitry CCONT ASIC delivers operating voltages both for the System and the RF blocks.
Charging control ASIC CHAPS is integrated power switch for battery
charging.
The RF block is designed for a handportable phone which operates in the
GSM system. The purpose of the RF block is to receive and demodulate
the radio frequency signal from the base station and to transmit a modulated RF signal to the base station. The PLUSSA ASIC is used for VHF
and PLL functions. The CRFU ASIC is used at the front end.
Issue 04/99
Page 3 – 11
NSE–1
PAMS
System Module
Baseband Module
Block Diagram
TX/RX SIGNALS
COBBA
UI
COBBA SUPPLY
RF SUPPLIES
CCONT
BB SUPPLY
Technical Documentation
PA SUPPLY
32kHz
CLK
SLEEP CLOCK
SIM
13MHz
CLK
SYSTEM CLOCK
AUDIOLINES
BASEBAND
Technical Summary
The baseband module consists of four asics, CHAPS, CCONT, COBBA–
GJ and MAD2, which take care of the baseband functions of NSE–1.
The baseband is running from a 2.8V power rail, which is supplied by a
power controlling asic. In the CCONT asic there are 6 individually controlled regulator outputs for RF–section and two outputs for the baseband. In addition there is one +5V power supply output VCP for RF–part.
The CCONT contains also a SIM interface, which supports both 3V and
5V SIM–cards. A real time clock function is integrated into the CCONT,
which utilizes the same 32kHz clock supply as the sleep clock. A backup
power supply is provided for the RTC, which keeps the real time clock
running when the main battery is removed. The backup power supply is a
rechargable polyacene battery. The backup time with this battery is minimum of ten minutes.
MAD
+
MEMORIES
VBAT
BATTERY
CHAPS
SYSCON
Page 3 – 12
Issue 04/99
PAMS
NSE–1
Technical Documentation
The interface between the baseband and the RF section is handled by a
specific asic. The COBBA asic provides A/D and D/A conversion of the
in–phase and quadrature receive and transmit signal paths and also A/D
and D/A conversions of received and transmitted audio signals to and
from the UI section. The COBBA supplies the analog TXC and AFC signals to rf section according to the MAD DSP digital control and converts
analog AGC into digital signal for the DSP. Data transmission between the
COBBA and the MAD is implemented using a parallel connection for high
speed signalling and a serial connection for PCM coded audio signals.
Digital speech processing is handled by the MAD asic. The COBBA asic
is a dual voltage circuit, the digital parts are running from the baseband
supply VBB and the analog parts are running from the analog supply
VCOBBA.
The baseband supports three external microphone inputs and two external earphone outputs. The inputs can be taken from an internal microphone, a headset microphone or from an external microphone signal
source. The microphone signals from different sources are connected to
separate inputs at the COBBA asic.
System Module
The output for the internal earphone is a dual ended type output capable
of driving a dynamic type speaker. Input and output signal source selection and gain control is performed inside the COBBA asic according to
control messages from the MAD. Keypad tones, DTMF, and other audio
tones are generated and encoded by the MAD and transmitted to the
COBBA for decoding. A buzzer and an external vibra alert control signals
are generated by the MAD with separate PWM outputs.
EMC shieding is implemented using a metallized plastic B–cover with a
conductive rubber seal on the ribs. On the other side the engine is
shielded with a frame having a conductive rubber on the inner walls,
which makes a contact to a ground ring of the engine board and a
ground plane of the UI–board. Heat generated by the circuitry will be conducted out via the PCB ground planes.
Issue 04/99
Page 3 – 13
NSE–1
C
PAMS
System Module
Technical Documentation
Bottom Connector External Contacts
Contact Line Symbol Function
1 VIN Charger input voltage
DC–jack
side contact
(DC–plug ring)
DC–jack
center pin
DC–jack
side contact
(DC–plug jacket)
2 CHRG_CTRL Charger control output (from phone)
Microphone
acoustic ports
3 XMIC Accessory microphone signal input (to phone)
4 SGND Accessory signal ground
L_GND Charger ground
VIN Charger input voltage
CHRG_CTRL Charger control output (from phone)
Acoustic signal (to phone)
5 XEAR Accessory earphone signal output (from phone)
6 MBUS MBUS, bidirectional flash programming clock signal
7 FBUS_RX FBUS, unidirectional flash programming serial data input
(to phone)
8 FBUS_TX FBUS, unidirectional flash programming serial data output
(from phone)
9 L_GND Charger ground
Bottom Connector Signals
Pin Name Min Typ Max Unit Notes
1,3 VIN
2 L_GND 0 0 V Supply ground
7.25
3.25
320
7.1
3.25
720
7.6
3.6
370
8.4
3.6
800
7.95
16.9
3.95
420
9.3
3.95
850
V
V
V
mA
V
V
mA
Unloaded ACP–7 Charger (5kohms
load)
Peak output voltage (5kohms load)
Loaded output voltage (10ohms load)
Supply current
Unloaded ACP–9 Charger
Loaded output voltage (10ohms load)
Supply current
4,5 CHRG_
TRL
6 MICP N/A see section Internal microphone
7 MICN N/A see section Internal microphone
Page 3 – 14
0 0.5 V Charger control PWM low
2.0 2.85 V Charger control PWM high
32 Hz PWM frequency for a fast charger
1 99 % PWM duty cycle
Issue 04/99
PAMS
Baud rate 9600 Bit/s
Baud rate 9.6k–230.4kBit/s
Baud rate 9.6k–230.4kBit/s
NSE–1
Technical Documentation
8 XMIC
HMIC 0 3.2 29.3 mV Microphone signal
9 SGND
10 XEAR
2.0 2.2 kΩ Input AC impedance
1.47 1.55 V Mute (output DC level)
2.5 2.85 V Unmute (output DC level)
100 600 µA Bias current
System Module
NotesUnitMaxTypMinNamePin
1 Vpp Maximum signal level
58 490 mV Maximum signal level
Connected to COBBA MIC3P input
47 Ω Output AC impedance (ref. GND)
10 µF Series output capacitance
380 Ω Resistance to phone ground
47 Ω Output AC impedance (ref. GND)
10 µF Series output capacitance
16 300 Ω Load AC impedance to SGND (Head-
4.7 10 kΩ Load AC impedance to SGND (Acces-
1.0 Vpp Maximum output level (no load)
22 626 mV Output signal level
10 kΩ Load DC resistance to SGND (Acces-
16 1500 Ω Load DC resistance to SGND (Head-
2.8 V DC voltage (47k pull–up to VBB)
HEAR 28 626 mV Earphone signal (HF– HFCM)
11 MBUS 0 logic low
2.0 logic high 2.85
12 FBUS_RX 0 logic low
2.0 logic high 2.85
13 FBUS_TX 0 logic low
2.0 logic high 2.85
set)
sory)
sory)
set)
Connected to COBBA HF output
0.8 V Serial bidirectional control bus.
Phone has a 4k7 pullup resistor
0.8 V Fbus receive. Serial Data
Phone has a 220k pulldown resistor
0.5 V Fbus transmit. Serial Data
Phone has a 47k pullup resistor
14 GND 0 0.3 V Supply ground
Issue 04/99
Page 3 – 15
NSE–1
5.0
Maximum voltage in call state with charger
PAMS
System Module
Technical Documentation
Battery Connector
Pin Name Min Typ Max Unit Notes
1 BVOLT 3.0 3.6 4.5
5.3
2 BSI
3 BTEMP
0 2.85 V Battery size indication
2.2 18 kohm Battery indication resistor (Ni battery)
20 22 24 kohm Battery indication resistor (service battery)
27 51 kohm Battery indication resistor (4.1V Lithium
68 91 kohm Battery indication resistor (4.2V Lithium bat-
0 1.4 V Battery temperature indication
V Battery voltage
Maximum voltage in idle state with charger
Phone has 100kohm pull up resistor.
SIM Card removal detection
(Treshold is 2.4V@VBB=2.8V)
battery)
tery)
Phone has a 100k (+–5%) pullup resistor,
Battery package has a NTC pulldown resis-
tor:
47k+–5%@+25C , B=4050+–3%
2.1
5 10
1.9
90 100
0 1 kohm Local mode initialization (in production)
20 22 25 kHz PWM control to VIBRA BATTERY
4 BGND 0 0 V Battery ground
3
20
2.85
200
V
ms
V
ms
Phone power up by battery (input)
Power up pulse width
Battery power up by phone (output)
Power up pulse width
SIM Card Connector
Pin Name Parameter Min Typ Max Unit Notes
4 GND GND 0 0 V Ground
3, 5 VSIM 5V SIM Card
3V SIM Card
6 DATA 5V Vin/Vout
3V Vin/Vout
2 SIMRST 5V SIM Card
3V SIM Card
4.8
2.8
4.0
0
2.8
0
4.0
2.8
5.0
3.0
”1”
”0”
”1”
”0”
”1”
”1”
5.2
3.2
VSIM
0.5
VSIM
0.5
VSIM
VSIM
V Supply voltage
V SIM data
Trise/Tfall max 1us
V SIM reset
1 SIMCLK Frequency
Trise/Tfall
Page 3 – 16
3.25
25
MHz
ns
SIM clock
Issue 04/99
PAMS
NSE–1
Technical Documentation
System Module
Internal Microphone
Pin Name Min Typ Max Unit Notes
6 MICP 0.55 4.1 mV Connected to COBBA MIC2N input. The
maximum value corresponds to1 kHz, 0
dBmO network level with input amplifier
gain set to 32 dB. typical value is maximum value – 16 dB.
7 MICN 0.55 4.1 mV Connected to COBBA MIC2P input. The
maximum value corresponds to1 kHz, 0
dBmO network level with input amplifier
gain set to 32 dB. typical value is maximum value – 16 dB.
RTC Backup Battery
The RTC block in CCONT needs a power backup to keep the clock running when the phone battery is disconnected. The backup power is supplied from a rechargable polyacene battery that can keep the clock running minimum of 10 minutes. The backup battery is charged from the
main battery through CHAPS.
Signal Parameter Min Typ Max Unit Notes
VBACK
VBACK
Backup battery charging from CHAPS
Backup battery charging from CHAPS
Backup battery supply
to CCONT
Backup battery supply
to CCONT
3.02 3.15 3.28 V
100 200 500 uA Vout@VBAT–0.2V
2 3.28 V Battery capacity
65uAh
80 uA
Buzzer
Signal Maximum
output cur-
rent
BuzzPWM /
BUZZER
2mA 2.5V 0.2V 0...50 (128 lin-
Input
high level
Input
low level
Level (PWM)
range, %
ear steps)
Frequency
range, Hz
440...4700
Issue 04/99
Page 3 – 17
NSE–1
PAMS
System Module
Functional Description
Power Distribution
In normal operation the baseband is powered from the phone‘s battery.
The battery consists of one Lithium–Ion cell. There is also a possibility to
use batteries consisting of three Nickel Metal Hydride cells. An external
charger can be used for recharging the battery and supplying power to
the phone. The charger can be either a standard charger that can deliver
around 400 mA or so called performance charger, which can deliver supply current up to 850 mA.
The baseband contains components that control power distribution to
whole phone excluding those parts that use continuous battery supply.
The battery feeds power directly to three parts of the system: CCONT,
power amplifier, and UI (buzzer and display and keyboard lights). Figure
below shows a block diagram of the power distribution.
Technical Documentation
The power management circuit CHAPS provides protection agains overvoltages, charger failures and pirate chargers etc. that would otherwise
cause damage to the phone.
PA SUPPLY
VCOBBA
COBBA
UI
VBAT
VBB
VBB
MAD
+
MEMORIES
RF SUPPLIES
CCONT
PWRONX
CNTVR
VBB
PURX
PWM
LIM
CHAPS
VSIM
VBAT
RTC
BACKUP
SIM
BATTERY
Page 3 – 18
BASEBAND
VIN
BOTTOM CONNECTOR
Issue 04/99
PAMS
NSE–1
Technical Documentation
Battery charging
The electrical specifications give the idle voltages produced by the acceptable chargers at the DC connector input. The absolute maximum input voltage is 30V due to the transient suppressor that is protecting the
charger input. At phone end there is no difference between a plug–in
charger or a desktop charger. The DC–jack pins and bottom connector
charging pads are connected together inside the phone.
MAD
0R22
VBAT
MAD
CCONTINT
CCONT
ICHAR
PWM_OUT
VCHAR
GND
LIM
VOUT
CHAPS
RSENSE
PWM
GND
22k
VCH
27p
1n
TRANSCEIVER
1u
47k
4k7
1.5A
30V
27p
System Module
VIN
CHRG_CTRL
L_GND
CHARGER
NOT IN
ACP–7
Startup Charging
When a charger is connected, the CHAPS is supplying a startup current
minimum of 130mA to the phone. The startup current provides initial
charging to a phone with an empty battery. Startup circuit charges the
battery until the battery voltage level is reaches 3.0V (+/– 0.1V) and the
CCONT releases the PURX reset signal and program execution starts.
Charging mode is changed from startup charging to PWM charging that is
controlled by the MCU software. If the battery voltage reaches 3.55V
(3.75V maximum) before the program has taken control over the charging, the startup current is switched off. The startup current is switched on
again when the battery voltage is sunken 100mV (nominal).
Parameter Symbol Min Typ Max Unit
VOUT Start– up mode cutoff limit Vstart 3.45 3.55 3.75 V
VOUT Start– up mode hysteresis
NOTE: Cout = 4.7 uF
Start–up regulator output current
VOUT = 0V ... Vstart
Vstarthys 80 100 200 mV
Istart 130 165 200 mA
Issue 04/99
Page 3 – 19
NSE–1
PAMS
System Module
Battery Overvoltage Protection
Output overvoltage protection is used to protect phone from damage.
This function is also used to define the protection cutoff voltage for different battery types (Li or Ni). The power switch is immediately turned OFF if
the voltage in VOUT rises above the selected limit VLIM1 or VLIM2.
Parameter Symbol LIM input Min Typ Max Unit
Output voltage cutoff limit
(during transmission or Li–
battery)
Output voltage cutoff limit
(no transmission or Ni–bat-
tery)
VLIM1 LOW 4.4 4.6 4.8 V
VLIM2 HIGH 4.8 5.0 5.2 V
The voltage limit (VLIM1 or VLIM2) is selected by logic LOW or logic
HIGH on the CHAPS (N101) LIM– input pin. Default value is lower limit
VLIM1.
Technical Documentation
VCH
VCH<VOUT
VOUT
VLIM1 or VLIM2
When the switch in output overvoltage situation has once turned OFF, it
stays OFF until the the battery voltage falls below VLIM1 (or VLIM2) and
PWM = LOW is detected. The switch can be turned on again by setting
PWM = HIGH.
t
t
SWITCH
PWM (32Hz)
Page 3 – 20
ON OFF
ON
Issue 04/99
PAMS
NSE–1
Technical Documentation
Battery Removal During Charging
Output overvoltage protection is also needed in case the main battery is
removed when charger connected or charger is connected before the battery is connected to the phone.
With a charger connected, if VOUT exceeds VLIM1 (or VLIM2), CHAPS
turns switch OFF until the charger input has sunken below Vpor (nominal
3.0V, maximum 3.4V). MCU software will stop the charging (turn off
PWM) when it detects that battery has been removed. The CHAPS remains in protection state as long as PWM stays HIGH after the output
overvoltage situation has occured.
VCH
(Standard
Charger)
VOUT
Vpor
VLIM
4V
Vstart
Drop depends on load
& C in phone
System Module
Istart off due to VCH<Vpor
Vstarthys
PWM
SWITCH
1.1Battery removed, (standard) charger connected, VOUT rises (follows charger voltage)
2. VOUT exceeds limit VLIM(X), switch is turned immediately OFF
3.3VOUT falls (because no battery) , also VCH<Vpor (standard chargers full–rectified
4. Software sets PWM = LOW –> CHAPS does not enter PWM mode
5. PWM low –> Startup mode, startup current flows until Vstart limit reached
6. VOUT exceeds limit Vstart, Istart is turned off
7. VCH falls below Vpor
”1”
”0”
ON
OFF
2
output). When VCH > Vpor and VOUT < VLIM(X) –> switch turned on again (also PWM
is still HIGH) and VOUT again exceeds VLIM(X).
5
4
6
7
t
t
t
Issue 04/99
Page 3 – 21
NSE–1
PAMS
System Module
Different PWM Frequencies ( 1Hz and 32 Hz)
When a travel charger (2– wire charger) is used, the power switch is
turned ON and OFF by the PWM input when the PWM rate is 1Hz. When
PWM is HIGH, the switch is ON and the output current Iout = charger current – CHAPS supply current. When PWM is LOW, the switch is OFF and
the output current Iout = 0. To prevent the switching transients inducing
noise in audio circuitry of the phone soft switching is used.
The performance travel charger (3– wire charger) is controlled with PWM
at a frequency of 32Hz. When the PWM rate is 32Hz CHAPS keeps the
power switch continuously in the ON state.
SWITCH
ON ONON OFF OFF
Technical Documentation
PWM (1Hz)
SWITCH
PWM (32Hz)
ON
Page 3 – 22
Issue 04/99
PAMS
NSE–1
Technical Documentation
Battery Identification
Different battery types are identified by a pulldown resistor inside the battery pack. The BSI line inside transceiver has a 100k pullup to VBB. The
MCU can identify the battery by reading the BSI line DC–voltage level
with a CCONT (N100) A/D–converter.
BATTERY
BVOLT
BTEMP
BSI
VBB
2.8V
100k
10k
System Module
TRANSCEIVER
BSI
CCONT
The battery identification line is used also for battery removal detection.
The BSI line is connected to a SIMCardDetX line of MAD2 (D200). SIMCardDetX is a threshold detector with a nominal input switching level
0.85xVcc for a rising edge and 0.55xVcc for a falling edge. The battery
removal detection is used as a trigger to power down the SIM card before
the power is lost. The BSI contact in the battery pack is made 0.7mm
shorter than the supply voltage contacts so that there is a delay between
battery removal detection and supply power off.
Vcc
0.850.05 Vcc
0.550.05 Vcc
R
s
BGND
10n
SIMCardDetX
MAD
Issue 04/99
GND
SIMCARDDETX
S
IGOUT
Page 3 – 23
NSE–1
PAMS
System Module
Battery Temperature
The battery temperature is measured with a NTC inside the battery pack.
The BTEMP line inside transceiver has a 100k pullup to VREF. The MCU
can calculate the battery temperature by reading the BTEMP line DC–
voltage level with a CCONT (N100) A/D–converter.
BATTERY
BVOLT
BSI
BTEMP
Technical Documentation
TRANSCEIVER
VREF
1.5V
100k
10k
BTEMP
CCONT
R
T
NTC
Supply Voltage Regulators
The heart of the power distrubution is the CCONT. It includes all the voltage regulators and feeds the power to the whole system. The baseband
digital parts are powered from the VBB regulator which provides 2.8V
baseband supply. The baseband regulator is active always when the
phone is powered on. The VBB baseband regulator feeds MAD and memories, COBBA digital parts and the LCD driver in the UI section. There is
a separate regulator for a SIM card. The regulator is selectable between
3V and 5V and controlled by the SIMPwr line from MAD to CCONT. The
COBBA analog parts are powered from a dedicated 2.8V supply VCOBBA. The CCONT supplies also 5V for RF. The CCONT contains a real
time clock function, which is powered from a RTC backup when the main
battery is disconnected.
BGND
1k
1k
10n
VibraPWM
MAD
MCUGenIO4
Page 3 – 24
Issue 04/99
PAMS
NSE–1
Technical Documentation
The RTC backup is rechargable polyacene battery, which has a capacity
of 50uAh (@3V/2V) The battery is charged from the main battery voltage
by the CHAPS when the main battery voltage is over 3.2V. The charging
current is 200uA (nominal).
Operating mode Vref RF REG VCOB-
BA
Power off Off Off Off Off Off Pull
Power on On On/Off On On On On/Off
Reset On Off
VR1 On
Sleep On Off Off On On On/Off
NOTE:
On On Off Pull
VBB VSIM SIMIF
System Module
down
down
CCONT includes also five additional 2.8V regulators providing power to
the RF section. These regulators can be controlled either by the direct
control signals from MAD or by the RF regulator control register in
CCONT which MAD can update. Below are the listed the MAD control
lines and the regulators they are controlling.
– TxPwr controls VTX regulator (VR5)
– RxPwr controls VRX regulator (VR2)
– SynthPwr controls VSYN_1 and VSYN_2 regulators (VR4 and VR3)
– VCXOPwr controls VXO regulator (VR1)
CCONT generates also a 1.5 V reference voltage VREF to COBBA,
PLUSSA and CRFU. The VREF voltage is also used as a reference to
some of the CCONT A/D converters.
In additon to the above mentioned signals MAD includes also TXP control
signal which goes to PLUSSA power control block and to the power amplifier. The transmitter power control TXC is led from COBBA to PLUSSA.
Issue 04/99
Page 3 – 25
NSE–1
PAMS
System Module
Switched Mode Supply VSIM
There is a switched mode supply for SIM–interface and 5V regulator,
which supplies to RF section. SIM voltage is selected via serial IO. The
5V SMR can be switched on independently of the SIM voltage selection,
but can’t be switched off when VSIM voltage value is set to 5V.
NOTE: VSIM and V5V can give together a total of 30mA.
In the next figure the principle of the SMR / VSIM–functions is shown.
CCONT External
VBAT
Technical Documentation
V5V_4
V5V_3
V5V_2
Power Up
VSIM
The baseband is powered up by:
1. Pressing the power key, that generates a PWRONX interrupt
2. Connecting a charger to the phone. The CCONT recognizes
3. A RTC interrupt. If the real time clock is set to alarm and the
5V reg
V5V
signal from the power key to the CCONT, which starts the power up procedure.
the charger from the VCHAR voltage and starts the power up
procedure.
phone is switched off, the RTC generates an interrupt signal,
when the alarm is gone off. The RTC interrupt signal is connected to the PWRONX line to give a power on signal to the
CCONT just like the power key.
5/3V
5V
Page 3 – 26
4. A battery interrupt. Intelligent battery packs have a possibility
to power up the phone. When the battery gives a short (10ms)
voltage pulse through the BTEMP pin, the CCONT wakes up
and starts the power on procedure.
Issue 04/99
PAMS
NSE–1
Technical Documentation
Power up with a charger
When the charger is connected CCONT will switch on the CCONT digital
voltage as soon as the battery voltage exeeds 3.0V. The reset for
CCONT’s digital parts is released when the operating voltage is stabilized
( 50 us from switching on the voltages). Operating voltage for VCXO is
also switched on. The counter in CCONT digital section will keep MAD in
reset for 62 ms (PURX) to make sure that the clock provided by VCXO is
stable. After this delay MAD reset is relased, and VCXO –control
(SLEEPX) is given to MAD. The diagram assumes empty battery, but the
situation would be the same with full battery:
When the phone is powered up with an empty battery pack using the
standard charger, the charger may not supply enough current for standard powerup procedure and the powerup must be delayed.
Power Up With The Power Switch (PWRONX)
When the power on switch is pressed the PWRONX signal will go low.
CCONT will switch on the CCONT digital section and VCXO as was the
case with the charger driven power up. If PWRONX is low when the 64
ms delay expires, PURX is released and SLEEPX control goes to MAD. If
PWRONX is not low when 64 ms expires, PURX will not be released, and
CCONT will go to power off ( digital section will send power off signal to
analog parts)
System Module
12 3
1:Power switch pressed ==> Digital voltages on in CCONT (VBB)
2: CCONT digital reset released. VCXO turned on
3: 62 ms delay to see if power switch is still pressed.
Power Up by RTC
RTC ( internal in CCONT) can power the phone up by changing RTCPwr to
logical ”1”. RTCPwr is an internal signal from the CCONT digital section.
SLEEPX
PURX
CCPURX
PWRONX
VR1,VR6
VBB (2.8V)
Vchar
Issue 04/99
Page 3 – 27
NSE–1
PAMS
System Module
Power Up by IBI
IBI can power CCONT up by sending a short pulse to logical ”1”. RTCPwr is
an internal signal from the CCONT digital section.
Acting Dead
If the phone is off when the charger is connected, the phone is powered
on but enters a state called ”acting dead”. To the user the phone acts as if
it was switched off. A battery charging alert is given and/or a battery
charging indication on the display is shown to acknowledge the user that
the battery is being charged.
Active Mode
In the active mode the phone is in normal operation, scanning for channels, listening to a base station, transmitting and processing information.
All the CCONT regulators are operating. There are several substates in
the active mode depending on if the phone is in burst reception, burst
transmission, if DSP is working etc..
Technical Documentation
Sleep Mode
In the sleep mode, all the regulators except the baseband VBB and the
SIM card VSIM regulators are off. Sleep mode is activated by the MAD
after MCU and DSP clocks have been switched off. The voltage regulators for the RF section are switched off and the VCXO power control,
VCXOPwr is set low. In this state only the 32 kHz sleep clock oscillator in
CCONT is running. The flash memory power down input is connected to
the ExtSysResetX signal, and the flash is deep powered down during the
sleep mode.
The sleep mode is exited either by the expiration of a sleep clock counter
in the MAD or by some external interrupt, generated by a charger connection, key press, headset connection etc. The MAD starts the wake up
sequence and sets the VCXOPwr and ExtSysResetX control high. After
VCXO settling time other regulators and clocks are enabled for active
mode.
If the battery pack is disconnect during the sleep mode, the CCONT pulls
the SIM interface lines low as there is no time to wake up the MCU.
Charging
Page 3 – 28
Charging can be performed in any operating mode. The charging algorithm is dependent on the used battery technology. The battery type is indicated by a resistor inside the battery pack. The resistor value corresponds to a specific battery capacity. This capacity value is related to the
battery technology as different capacity values are achieved by using different battery technology.
Issue 04/99
PAMS
NSE–1
Technical Documentation
The battery voltage, temperature, size and current are measured by the
CCONT controlled by the charging software running in the MAD.
The power management circuitry controls the charging current delivered
from the charger to the battery. Charging is controlled with a PWM input signal, generated by the CCONT. The PWM pulse width is controlled by the
MAD and sent to the CCONT through a serial data bus. The battery voltage
rise is limited by turning the CHAPS switch off when the battery voltage has
reached 4.2V (LiIon) or 5.2V (NiMH, 5V in call mode). Charging current is
monitored by measuring the voltage drop across a 220mohm resistor.
Power Off
The baseband is powered down by:
1. Pressing the power key, that is monitored by the MAD via keyboard line (row 4), which starts the power down procedure.
2. If the battery voltage is dropped below the operation limit, either by not charging it or by removing the battery.
System Module
Watchdog
3. Letting the CCONT watchdog expire, which switches off all
CCONT regulators and the phone is powered down.
4. Setting the real time clock to power off the phone by a timer.
The RTC generates an interrupt signal, when the alarm is gone
off. The RTC interrupt signal is connected to the PWRONX line
to give a power off signal to the CCONT just like the power key.
The power down is controlled by the MAD. When the power key has been
pressed long enough or the battery voltage is dropped below the limit the
MCU initiates a power down procedure and disconnects the SIM power.
Then the MCU outputs a system reset signal and resets the DSP. If there is
no charger connected the MCU writes a short delay to CCONT watchdog
and resets itself. After the set delay the CCONT watchdog expires, which
activates the PURX and all regulators are switched off and the phone is
powered down by the CCONT.
If a charger is connected when the power key is pressed the phone enters into the acting dead mode.
The Watchdog block inside CCONT contains a watchdog counter and
some additional logic which are used for controlling the power on and
power off procedures of CCONT. Watchdog output is disabled when
WDDisX pin is tied low. The WD-counter runs during that time, though.
Watchdog counter is reset internally to 32s at power up. Normally it is reset by MAD writing a control word to the WDReg. Watchdog counter can
be disabled b grounding CCONT (N100) pin 29.
Issue 04/99
Page 3 – 29
NSE–1
PAMS
System Module
Audio control
Bias +
EMC
MICP/N
EMC + Acc.
Interf.
XMIC
System
SGND
Connector
XEAR
EMC
Technical Documentation
The audio control and processing is taken care by the COBBA–GJ, which
contains the audio and RF codecs, and the MAD2, which contains the
MCU, ASIC and DSP blocks handling and processing the audio signals. A
detailed audio specification can be found from document
DSP
MAD
MCU
Buzzer
Driver
Circuit
Buzzer
MIC2
MIC1
MIC3
HFCM
AuxOut
HF
EAR
Preamp
Amp Multipl.
Multipl.Premult.
COBBA
Pre
& LP
LP
A
D
D
A
The baseband supports three microphone inputs and two earphone outputs. The inputs can be taken from an internal microphone, a headset microphone or from an external microphone signal source. The microphone
signals from different sources are connected to separate inputs at the
COBBA–GJ asic. Inputs for the microphone signals are differential type.
The MIC1 inputs are used for a headset microphone that can be connected directly to the system connector. The internal microphone is connected to MIC2 inputs and an external pre–amplified microphone (handset/handfree) signal is connected to the MIC3 inputs. In COBBA there are
also three audio signal outputs of which dual ended EAR lines are used
for internal earpiece and HF line for accessory audio output. The third audio output AUXOUT is used only for bias supply to the headset microphone. As a difference to DCT2 generation the SGND ( = HFCM at COBBA) does not supply audio signal (only common mode). Therefore there
are no electrical loopback echo from downlink to uplink.
The output for the internal earphone is a dual ended type output capable
of driving a dynamic type speaker. The output for the external accessory
and the headset is single ended with a dedicated signal ground SGND.
Input and output signal source selection and gain control is performed inside the COBBA–GJ asic according to control messages from the MAD2.
Keypad tones, DTMF, and other audio tones are generated and encoded
by the MAD2 and transmitted to the COBBA–GJ for decoding.
Page 3 – 30
Issue 04/99
PAMS
NSE–1
Technical Documentation
External Audio Connections
The external audio connections are presented in figure below. A headset
can be connected directly to the system connector. The headset microphone bias is supplied from COBBA AUXOUT output and fed to microphone through XMIC line. The 330ohm resistor from SGND line to AGND
provides a return path for the bias current.
Baseband
HookDet
MAD
HeadDet
1u
System Module
2.8 V
47k
22k
22k
1u
CCONT
AUXOUT
COBBA
EAD
HFC
M
MIC1
N
MIC1
P
MIC3
N
MIC3
P
2.8 V
47k
47R
10
H
F
10
33n
33n
33n
33n
47R
47R
330R
2k2
2k2
2k2
XEAR
SGN
D
XMI
C
Issue 04/99
Page 3 – 31
NSE–1
PAMS
System Module
Technical Documentation
Analog Audio Accessory Detection
In XEAR signal there is a 47 kW pullup in the transceiver and 6.8 kW
pull–down to SGND in accessory. The XEAR is pulled down when an
accessory is connected, and pulled up when disconnected. The XEAR is
connected to the HookDet line (in MAD), an interrupt is given due to both
connection and disconnection. There is filtering between XEAR and
HookDet to prevent audio signal giving unwanted interrupts.
External accessory notices powered–up phone by detecting voltage in
XMIC line. In Table 23 there is a truth table for detection signals.
Accessory connected HookDet HeadDet Notes
No accessory connected High High Pullups in the transceiver
Headset HDC–9 with a button switch
pressed
Headset HDC–9 with a button switch re-
leased
Handsfree (HFU–1) Low High XEAR loaded (dc)
Low Low XEAR and XMIC loaded (dc)
High Low *) XEAR unloaded (dc)
Headset Detection
The external headset device is connected to the system connector, from
which the signals are routed to COBBA headset microphone inputs and
earphone outputs. In the XMIC line there is a (47 + 2.2) kW pullup in the
transceiver. The microphone is a low resistancepulldown compared to
the transceiver pullup.
When there is no call going, the AUXOUT is in high impedance state and
the XMIC is pulled up. When a headset is connected, the XMIC is pulled
down. The XMIC is connected to the HeadDet line (in MAD), an interrupt
is given due to both connection and disconnection. There is filtering between the XMIC and the HeadDet to prevent audio signal giving unwanted interrupts (when an accessory is connected).
In the XEAR line there is a 47 kW pullup in the transceiver. The earphone
is a low resistance pulldown compared to the transceiver pullup. When a
remote control switch is open, there is a capacitor in series with the earphone, so the XEAR (and HookDet) is pulled up by the phone. When the
switch is closed, the XEAR (and HookDet) is pulled down via the earphone. So both press and release of the button gives an interrupt.
During a call there is a bias voltage (1.5 V) in the AUXOUT, and the
HeadDet cannot be used. The headset interrupts should to be disabled
during a call and the EAD line (AD converter in CCONT) should be polled
to see if the headset is disconnected.
Page 3 – 32
Issue 04/99
PAMS
NSE–1
Technical Documentation
Internal Audio Connections
The speech coding functions are performed by the DSP in the MAD2 and
the coded speech blocks are transferred to the COBBA–GJ for digital to
analog conversion, down link direction. In the up link direction the PCM
coded speech blocks are read from the COBBA–GJ by the DSP.
There are two separate interfaces between MAD2 and COBBA–GJ: a
parallel bus and a serial bus. The parallel bus has 12 data bits, 4 address
bits, read and write strobes and a data available strobe. The parallel interface is used to transfer all the COBBA–GJ control information (both the
RFI part and the audio part) and the transmit and receive samples. The
serial interface between MAD2 and COBBA–GJ includes transmit and receive data, clock and frame synchronisation signals. It is used to transfer
the PCM samples. The frame synchronisation frequency is 8 kHz which
indicates the rate of the PCM samples and the clock frequency is 1 MHz.
COBBA is generating both clocks.
4–wire PCM Serial Interface
System Module
The interface consists of following signals: a PCM codec master clock
(PCMDClk), a frame synchronization signal to DSP (PCMSClk), a codec
transmit data line (PCMTX) and a codec receive data line (PCMRX). The
COBBA–GJ generates the PCMDClk clock, which is supplied to DSP SIO.
The COBBA–GJ also generates the PCMSClk signal to DSP by dividing
the PCMDClk. The PCMDClk frequency is 1.000 MHz and is generated
by dividing the RFIClk 13 MHz by 13. The COBBA–GJ further divides the
PCMDClk by 125 to get a PCMSClk signal, 8.0 kHz.
PCMDClk
PCMSClk
PCMTxData
PCMRxData
sign extended
15 14 13 12 011 10
sign extended
MSB
MSB
LSB
LSB
Issue 04/99
Page 3 – 33
NSE–1
PAMS
System Module
Alert Signal Generation
A buzzer is used for giving alerting tones and/or melodies as a signal of
an incoming call. Also keypress and user function response beeps are
generated with the buzzer. The buzzer is controlled with a BuzzerPWM
output signal from the MAD. A dynamic type of buzzer must be used
since the supply voltage available can not produce the required sound
pressure for a piezo type buzzer. The low impedance buzzer is connected
to an output transistor that gets drive current from the PWM output. The
alert volume can be adjusted either by changing the pulse width causing
the level to change or by changing the frequency to utilize the resonance
frequency range of the buzzer.
A vibra alerting device is used for giving silent signal to the user of an incoming call. The device is controlled with a VibraPWM output signal from
the MAD2. The vibra alert can be adjusted either by changing the pulse
width or by changing the pulse frequency. The vibra device is not inside
the phone, but in a special vibra battery.
Technical Documentation
Digital Control
The baseband functions are controlled by the MAD asic, which consists of
a MCU, a system ASIC and a DSP.
MAD2
MAD2 contains following building blocks:
– ARM RISC processor with both 16–bit instruction set (THUMB mode)
and 32–bit instruction set (ARM mode)
– TI Lead DSP core with peripherials:
– BUSC (BusController for controlling accesses from ARM to API, Sys-
tem Logic and MCU external memories, both 8– and 16–bit memories)
– API (Arm Port Interface memory) for MCU–DSP commu-
nication, DSP code download, MCU interrupt handling vec-
tors (in DSP RAM) and DSP booting
– Serial port (connection to PCM)
– Timer
– DSP memory
Page 3 – 34
– System Logic
– CTSI (Clock, Timing, Sleep and Interrupt control)
– MCUIF (Interface to ARM via B
tROM
– DSPIF (Interface to DSP)
– MFI (Interface to COBBA AD/DA Converters)
USC). Contains MCU Boo-
Issue 04/99
PAMS
NSE–1
Technical Documentation
– CODER (Block encoding/decoding and A51&A52 ciphering)
– AccIF(Accessory Interface)
– SCU (Synthesizer Control Unit for controlling 2 separate
– UIF (Keyboard interface, serial control interface for COBBA
– SIMI (SimCard interface with enhanched features)
– PUP (Parallel IO, USART and PWM control unit for vibra
The MAD2 operates from a 13 MHz system clock, which is generated
from the 13Mhz VCXO frequency. The MAD2 supplies a 6,5MHz or a
13MHz internal clock for the MCU and system logic blocks and a 13MHz
clock for the DSP, where it is multiplied to 52 MHz DSP clock. The system
clock can be stopped for a system sleep mode by disabling the VCXO
supply power from the CCONT regulator output. The CCONT provides a
32kHz sleep clock for internal use and to the MAD2, which is used for the
sleep mode timing. The sleep clock is active when there is a battery voltage available i.e. always when the battery is connected.
System Module
synthesizer)
PCM Codec, LCD Driver and CCONT)
and buzzer)
Pin
N:o
1 MCUGenOut5 O Audio 2 0 MCU General
2 MCUGenOut4 O N101 2 0 MCU General
3
4 MCUGenOut3 O 2 0 MCU General
5 VCC IO VCC in
6 MCUGenOut2 O 2 0 MCU General
7 MCUGenOut1 O MCU
8 MCUGenOut0 O 2 1 LoByteSelX
9 Col4 I/O UIF 2 Input program-
Pin Name Pin
T ype
LEADGND
Connected
to/from
memory
Drive
req.
mA
Reset
State
2 0 MCU General
Note Explanation
purpose output
purpose output
Lead Ground
purpose output
Power
3325c10
purpose output
purpose output
MCU General
in 16–bit
mode
mable pullup
PR0201
purpose output
I/O line for key-
board column 4
port
port
port
port
port
port
Issue 04/99
Page 3 – 35
NSE–1
PAMS
System Module
Pin NamePin
N:o
10 Col3 I/O UIF 2 Input program-
11 GND Ground
12 Col2 I/O UIF 2 Input program-
13 Col1 I/O UIF 2 Input program-
14 Col0 I/O UIF 2 Input program-
15 LCDCSX I/O UIF 2 Input external
Pin
Type
Connected
to/from
Drive
req.
mA
State
Technical Documentation
ExplanationNoteReset
I/O line for key-
mable pullup
PR0201
mable pullup
PR0201
mable pullup
PR0201
mable pullup
PR0201
pullup/down
board column 3
I/O line for keyboard column 2
I/O line for keyboard column 1
I/O line for keyboard column 0
serial LCD driver
chip select, par-
allel LCD driver
enable
16
17 Row5LCDCD I/O UIF 2 Input,
18 VCC Core VCC in
19 Row4 I/O UIF 2 Input,
20 Row3 I/O UIF 2 Input,
21 Row2 I/O UIF 2 Input,
LEADVCC
pullup
pullup
pullup
pullup
pullup
PR0201
3325c10
pullup
PR0201
pullup
PR0201
pullup
PR0201
Lead Power
Keyboard row5
data I/O , serial
LCD driver com-
mand/data indi-
cator, parallel
LCD driver read/
write select
Power
I/O line for key-
board row 4, par-
allel LCD driver
register selection
control
I/O line for key-
board row 3, par-
allel LCD driver
data
I/O line for key-
board row 2, par-
allel LCD driver
data
22 Row1 I/O UIF 2 Input,
23 Row0 I/O UIF 2 Input,
Page 3 – 36
pullup
pullup
pullup
PR0201
pullup
PR0201
I/O line for key-
board row 1, par-
allel LCD driver
data
I/O line for key-
board row 0, par-
allel LCD driver
data
Issue 04/99
PAMS
NSE–1
Technical Documentation
Pin NamePin
N:o
24 JTDO O 2 Tri–
25 GND Ground
26 JTRst I Input,
27 JTClk I Input pulldown
28 JTDI I Input,
29 JTMS I Input,
30 VCC IO VCC in
Pin
Type
Connected
to/from
Drive
req.
mA
State
state
pull-
down
pullup
pullup
pulldown
PD0201
PD0201
pullup
PR0201
pullup
PR0201
3325c10
System Module
ExplanationNoteReset
JTAG data out
JTAG reset
JT AG Clock
JTAG data in
JTAG mode se-
Power
lect
31 CoEmu0 I/O 2 Input,
pullup
32 CoEmu1 I/O 2 Input,
pullup
33 MCUGenIO7 I/O 2 Input,
pull-
down
34 MCUGenIO6 I/O UI 2 Input,
pull-
down
35
36 MCUGenIO5 I/O UI 2 Input,
37
38 MCUAd0 O MCU
39
40 MCUAd1 O MCU
41 MCUAd2 O MCU
LEADGND
pull-
down
ARMGND
2 0 MCU address
MEMORY
ARMVCC
2 0 MCU address
MEMORY
2 0 MCU address
MEMORY
pullup
PR0201
pullup
PR0201
pulldown
PD1001
pulldown
PD1001
pulldown
PD1001
DSP/MCU
emulation port 0
DSP/MCU
emulation port 1
General purpose
I/O port
Lights
Lead Ground
LCD reset
ARM Ground
bus
ARM Power
bus
bus
42 GND Ground
43 MCUAd3 O MCU
MEMORY
44 MCUAd4 O MCU
MEMORY
45 MCUAd5 O MCU
MEMORY
Issue 04/99
2 0 MCU address
bus
2 0 MCU address
bus
2 0 MCU address
bus
Page 3 – 37
NSE–1
PAMS
System Module
Pin NamePin
N:o
46 MCUAd6 O MCU
47 VCC IO VCC in
48 MCUAd7 O MCU
49 MCUAd8 O MCU
50 MCUAd9 O MCU
51 MCUAd10 O MCU
52 GND Ground
53 MCUAd11 O MCU
54 MCUAd12 O MCU
55 MCUAd13 O MCU
56 MCUAd14 O MCU
57 MCUAd15 O MCU
58 MCUAd16 O MCU
59 VCC Core VCC in
60 MCUAd17 O MCU
61 MCUAd18 O MCU
62 MCUAd19 O MCU
63 MCUAd20 O MCU
64 MCUAd21 O MCU
65 ExtMCUDa0 I/O MCU
66 GND Ground
Pin
Type
Connected
to/from
MEMORY
MEMORY
MEMORY
MEMORY
MEMORY
MEMORY
MEMORY
MEMORY
MEMORY
MEMORY
MEMORY
MEMORY
MEMORY
MEMORY
MEMORY
MEMORY
MEMORY
Drive
req.
mA
State
2 0 MCU address
2 0 MCU address
2 0 MCU address
2 0 MCU address
2 0 MCU address
2 0 MCU address
2 0 MCU address
2 0 MCU address
2 0 MCU address
2 0 MCU address
2 0 MCU address
2 0 MCU address
2 0 MCU address
2 0 MCU address
2 0 MCU address
2 0 MCU address
2 Input MCU data bus
Technical Documentation
ExplanationNoteReset
bus
Power
3325c10
bus
bus
bus
bus
bus
bus
bus
bus
bus
bus
Power
3325c10
bus
bus
bus
bus
bus
67 ExtMCUDa1 I/O MCU
MEMORY
68 ExtMCUDa2 I/O MCU
MEMORY
Page 3 – 38
2 Output MCU data bus
2 Output MCU data bus
Issue 04/99
PAMS
NSE–1
Technical Documentation
Pin NamePin
N:o
69 ExtMCUDa3 I/O MCU
70 ExtMCUDa4 I/O MCU
71 ExtMCUDa5 I/O MCU
72 ExtMCUDa6 I/O MCU
73 VCC IO VCC in
74 ExtMCUDa7 I/O MCU
75 MCUGenIO8 I/O 2 Input MCU Data in
76 MCUGenIO9 I/O 2 Input MCU Data in
77 MCUGenIO10 I/O 2 Input MCU Data in
78 MCUGenIO11 I/O 2 Input MCU Data in
79 GND Ground
Pin
Type
Connected
to/from
MEMORY
MEMORY
MEMORY
MEMORY
MEMORY
Drive
req.
mA
State
2 Output MCU data bus
2 Output MCU data bus
2 Output MCU data bus
2 Output MCU data bus
3325c10
2 Output MCU data bus
16–bit mode
16–bit mode
16–bit mode
16–bit mode
System Module
ExplanationNoteReset
Power
General purpose
I/O port
General purpose
I/O port
General purpose
I/O port
General purpose
I/O port
80 MCUGenIO12 I/O 2 Input MCU Data in
16–bit mode
81 MCUGenIO13 I/O 2 Input MCU Data in
16–bit mode
82 MCUGenIO14 I/O 2 Input MCU Data in
16–bit mode
83 MCUGenIO15 I/O 2 Input MCU Data in
16–bit mode
84 MCURdX O MCU
MEMORY
85 VCC Core VCC in
86 MCUWrX O MCU
MEMORY
87 ROM1SelX O MCU ROM 2 1 ROM chip select
88 RAMSelX O MCU RAM 2 1 RAM chip select
89 ROM2SelX O MCU ROM2 2 1 Extra chip select,
90 MCUGenIO1 I/O 2 Input,
91 DSPXF O 2 1 External flag
2 1 MCU Read
3325c10
2 1 MCU write
pullup
pullup
PR0201
General purpose
I/O port
General purpose
I/O port
General purpose
I/O port
General purpose
I/O port
strobe
Power
strobe
can be used as
MCU general
output
General purpose
I/O port
Issue 04/99
Page 3 – 39
NSE–1
PAMS
System Module
Pin NamePin
N:o
92
93 RFClk I VCXO Input System clock
94 RFClkGnd Input System clock
95 SIMCardDetX I Input SIM card detec-
96
97 BuzzPWM O BUZZER 2 0 Buzzer PWM
98
99 VibraPWM O VIBRA 2 0 Vibra PWM con-
100 GND Ground
SCVCC
SCGND
LEADVCC
Pin
Type
Connected
to/from
Drive
req.
mA
State
Technical Documentation
ExplanationNoteReset
Special cell Pow-
er
from VCTCXO
reference ground
input
tion
Special cell
Ground
control
LEAD Power
trol
101 MCUGenIO3 I/O EEPROM 2 Input,
pullup
102 MCUGenIO2 I/O EEPROM 2 Input,
pullup
103 EEPROMSelX O MCU EE-
PROM
104 AccTxData I/O 4 Tri–
105 VCC IO VCC in
106 GenDet I Input General purpose
107 HookDet I Input Non–MBUS ac-
108 HeadDet I Input Headset detec-
109 AccRxData I Input Accessory RX
110 GND Ground
2 1 Not used, can be
State
pullup
PR1001
pullup
PR1001
external
pullup
3325c10
WP
SCL
used as MCU
general output
Accessory TX
data, Flash_TX
Power
interrupt
cessory connec-
tion detector
tion interrupt
data, Flash_RX
111 MCUGenIO4 I/O 2 Input,
112 MBUS I/O 2 Input,
Page 3 – 40
pull-
down
exter-
nal
pullup
pulldown
PD1001
external
pullup
General purpose
I/O port, BATTI/
O
MBUS, Flash
clock
Issue 04/99
PAMS
NSE–1
Technical Documentation
Pin NamePin
N:o
113 VCXOPwr O CCONT 2 1 VCXO regulator
114 SynthPwr O CCONT 2 0 Synthesizer reg-
115 VCC Core VCC in
116 GenCCONTCSX O CCONT 2 1 Chip select to
117
118 GenSDIO I/O CCONT, UIF 2 Input,
119 GenSClk O CCONT, UIF 2 0 Serial clock
LEADGND
Pin
Type
Connected
to/from
Drive
req.
mA
State
exter-
nal
pullup/
down
3325c10
external
pullup/down
depending
on how to
boot
System Module
ExplanationNoteReset
control
ulator control
Power
CCONT
LEAD Ground
Serial data in/out
120 SIMCardData I/O CCONT 2 0 SIM data
121 GND Ground
122 PURX I CCONT Input Power Up Reset
123 CCONTInt I CCONT Input CCONT interrupt
124 Clk32k I CCONT Input Sleep clock os-
cillator input
125 VCC IO VCC in
3325c10
126 SIMCardClk O CCONT 2 0 SIM clock
127 SIMCardRstX O CCONT 2 0 SIM reset
128 SIMCardIOC O CCONT 2 0 SIM data in/out
129 SIMCardPwr O CCONT 2 0 SIM power con-
130
131 RxPwr O CCONT 2 0 RX regulator
132 TxPwr O CCONT 2 0 TX regulator
LEADVCC
Power
control
trol
LEAD Power
control
control
133 TestMode I Input,
pull-
down
134 ExtSysResetX O 2 0 System Reset
135 PCMTxData O COBBA 2 0 Transmit data,
136 VCC IO VCC in
Issue 04/99
pulldown
PD0201
3325c10
Test mode select
DX
Power
Page 3 – 41
NSE–1
PAMS
System Module
Pin NamePin
N:o
137 PCMRxData I COBBA Input Receive data,
138 PCMDClk I COBBA Input Transmit clock,
139 PCMSClk I COBBA Input Transmitframe
140 COBBADAX I COBBA Input Data available
141 GND Ground
142 COBBAWrX O COBBA 2 1 COBBA write
143 COBBARdX O COBBA 2 1 COBBA read
144 COBBAClk O COBBA 4 1 COBBA clock,
Pin
Type
Connected
to/from
Drive
req.
mA
State
Technical Documentation
ExplanationNoteReset
RX
CLKX
sync, FSX
acknowledge
strobe
strobe
13 MHz
145 COBBAAd3 O COBBA 2 0 COBBA address
bit
146 COBBAAd2 O COBBA 2 0 COBBA address
bit
147 COBBAAd1 O COBBA 2 0 COBBA address
bit
148 COBBAAd0 O COBBA 2 0 COBBA address
bit
149 COBBADa11 I/O COBBA 2 0 COBBA data bit
150 VCC Core VCC in
3325c10
151 COBBADa10 I/O COBBA 2 0 COBBA data bit
152 COBBADa9 I/O COBBA 2 0 COBBA data bit
153 COBBADa8 I/O COBBA 2 0 COBBA data bit
154 COBBADa7 I/O COBBA 2 0 COBBA data bit
155 COBBADa6 I/O COBBA 2 0 COBBA data bit
156 GND Ground
157 COBBADa5 I/O COBBA 2 0 COBBA data bit
158 COBBADa4 I/O COBBA 2 0 COBBA data bit
Power
159 COBBADa3 I/O COBBA 2 0 COBBA data bit
160 COBBADa2 I/O COBBA 2 0 COBBA data bit
161 COBBADa1 I/O COBBA 2 0 COBBA data bit
162 COBBADa0 I/O COBBA 2 0 COBBA data bit
163 DSPGenOut5 O RF 2 0 DSP general
purpose output,
COBBA reset
Page 3 – 42
Issue 04/99
PAMS
NSE–1
Technical Documentation
Pin NamePin
N:o
164 VCC IO VCC in
165 DSPGenOut4 O 2 0 DSP general
166 DSPGenOut3 O IR 2 0 IR ON
167 DSPGenOut2 O 2 0 DSP general
168 DSPGenOut1 O 2 0 DSP general
169 DSPGenOut0 O 2 0 DSP general
170 MCUGenIO0 I/O EEPROM 2 Input,
171 FrACtrl O RF 2 0 SDATX0
Pin
Type
Connected
to/from
Drive
req.
mA
State
pullup
3325c10
pullup
PR0201
System Module
ExplanationNoteReset
Power
purpose output
purpose output
purpose output
purpose output
EEPROM serial
data SDA
172 GND Ground
173 SynthEna O PLUSSA 2 0 Synthesizer data
enable
174 SynthClk O PLUSSA 2 0 Synthesizer
clock
175 SynthData O PLUSSA 2 0 Synthesizer data
176 TxPA O PLUSSA,
power ampli-
fier
2 0 Power amplifier
control
Issue 04/99
Page 3 – 43
NSE–1
PAMS
System Module
Memories
The MCU program code resides in an external flash program memory,
which size is 8 Mbits (512kx16bit). The MCU work (data) memory size is
512kbits (64kx8bit). A serial EEPROM is used for storing the system and
tuning parameters, user settings and selections, a scratch pad and a
short code memory. The EEPROM size is 16kbits (2kx8bit).
The BusController (BUSC) section in the MAD decodes the chip select
signals for the external memory devices and the system logic. BUSC controls internal and external bus drivers and multiplexers connected to the
MCU data bus. The MCU address space is divided into access areas with
separate chip select signals. BUSC supports a programmable number of
wait states for each memory range.
Program Memory
The MCU program code resides in the program memory. The program
memory size is 8 Mbits (512kx16bit).
Technical Documentation
The flash memory has a power down pin that should be kept low, during
the power up phase of the flash to ensure that the device is powered up
in the correct state, read only. The power down pin is utilized in the system sleep mode by connecting the ExtSysResetX to the flash power down
pin to minimize the flash power consumption during the sleep.
SRAM Memory
The work memory is a static ram of size 512k (64kx8) in a shrink TSOP32
package. The work memory is supplied from the common baseband VBB
voltage and the memory contents are lost when the baseband voltage is
switched off. All retainable data should be stored into the EEPROM (or
flash) when the phone is powered down.
EEPROM Memory
An EEPROM is used for a nonvolatile data memory to store the tuning
parameters and phone setup information. The short code memory for
storing user defined information is also implemented in the EEPROM.
The EEPROM size is 2kbytes. The memory is accessed through a serial
bus and the default package is SO8.
MCU Memory Map
MAD2 supports maximum of 4GB internal and 4MB external address
space. External memories use address lines MCUAd0 to MCUAd21 and
16–bit databus. The BUSC bus controller supports 8– and 16–bit access
for byte, double byte, word and double word data. Access wait state 2
and used databus width can be selected separately for each memory
block.
Page 3 – 44
Issue 04/99
PAMS
NSE–1
Technical Documentation
Flash Programming
The preprogrammable phone has to be connected to the flash loading
adapter (FLA–5) via service cable SCH–5. The power supply should be
taken from service battery BBD–3 via flash loading adapter FLA–5.
When FLA–5 switches supply voltage to the service battery (BBD–3), the
service battery generates a short pulse (IBI pulse) to the power supply
circuit (CCONT pin 63) via BTEMP line (X102 pin 2).
The power supply circuit (N100) switches power on and releases MCU
(MAD2) from reset state (power up reset, PURX rises up to 1 (2.8 V).
The program execution starts from the internal boot ROM of MAD2 and
MCU investigates the status of the MBUS line. Normally this line is high
(2.8 V) because of pull up resistor R203, but when the flash program
adapter is connected, the MBUS line is forced low. When MCU has recognized the flash loading adapter (MBUS line is low), it gives program start
(MCU boot) information to the flash loading adapter by forcing flash_tx
(FBUS_TX) line low (X100 pin 13).
The flash prommer sends all needed data for flash programming to phone
via flash_rx (FBUS_RX) line (X100 pin 12). The phone (MCU) sends all
programming acknowlegment signals for flash prommer via flash_tx
(FBUS_TX) line (X100 pin 13). The acknowlegment information (rising
and falling edge of flash_tx line) signal is sent to flash prommer when
each step of flash programming is passed. Flash_tx line is also used to
send hardware configuration information (flash type etc.) to the flash
prommer. Flash_tx and flash_rx data is synchronized to flash clock signal,
which is sent from the flash prommer to phone via flash clock line (MBUS,
X100 pin 11).
System Module
The flash programming voltage (VPP) is generated internally. Switchable
voltage regulator N201 (or N202) is used to generate flash programming
voltage for the program memory (D211). The regulator is controlled by
MCU (MAD2) via MCUGenOutput pin 7. The input voltage for the flash
programming voltage regulator is taken from output of charger pump (pin
33) of power supply circuit CCONT (N100). The programming voltage (3
V +/– 10 %) is supplied via UI connector X300 (pins 12,13) to the program
memory D211. Thus the flash programming voltage (VPP) is switched on
only during the flash erasing and programming states.
COBBA–GJ
The COBBA–GJ provides an interface between the baseband and the
RF–circuitry. COBBA–GJ performs analogue to digital conversion of the
receive signal. For transmit path COBBA_GJ performs digital to analogue
conversion of the transmit amplifier power control ramp and the in–phase
and quadrature signals. A slow speed digital to analogue converter will
provide automatic frequency control (AFC).
The COBBA asic is at any time connected to MAD asic with two interfaces, one for transferring tx and rx data between MAD and COBBA and
one for transferring codec rx/tx samples.
Issue 04/99
Page 3 – 45
NSE–1
PAMS
System Module
Real Time Clock
Requirements for a real time clock implementation are a basic clock
(hours and minutes), a calender and a timer with alarm and power on/off
–function and miscellaneous calls. The RTC will contain only the time
base and the alarm timer but all other functions will be implemented with
the MCU software. The RTC needs a power backup to keep the clock
running when the phone battery is disconnected. The backup power is
supplied from a rechargable polyacene battery that can keep the clock
running some ten minutes. If the backup has expired, the RTC clock restarts after the main battery is connected. The CCONT keeps MCU in reset until the 32kHz source is settled (1s max).
The CCONT is an ideal place for an integrated real time clock as the asic
already contains the power up/down functions and a sleep control with
the 32kHz sleep clock, which is running always when the phone battery is
connected. This sleep clock is used for a time source to a RTC block.
RTC backup battery charging
Technical Documentation
CHAPS has a current limited voltage regulator for charging a backup battery. The regulator derives its power from VOUT so that charging can take
place without the need to connect a charger. The backup battery is only
used to provide power to a real time clock when VOUT is not present so it
is important that power to the charging circuitry is derived from VOUT and
that the charging circuitry does not present a load to the backup battery
when VOUT is not present.
It should not be possible for charging current to flow from the backup battery into VOUT if VOUT happens to be lower than VBACK. Charging current will gradually diminish as the backup battery voltage reaches that of
the regulation voltage.
Vibra Alerting Device
A vibra alerting device is used for giving silent signal to the user of an incoming call. The device is not placed in the phone but it will be added to a
special battery pack. The vibra is controlled with a PWM signal by the
MAD via the BTEMP battery terminal.
A 15kohm BSI resistor is needed to detect the vibra battery. It is only used
to enable vibra selection in user menu. When alerting, VibraPWM signal
is delivered to battery.
Page 3 – 46
Issue 04/99
PAMS
NSE–1
Technical Documentation
Vibra
22k
10n
100n
BATTERY
R
T
47k
NTC
VBAT
BSI
BTEMP
GND
1k
TRANSCEIVER
VREF
100k
10k
R3
1k
C1
10n
System Module
BTEMP
VIBRAPWM
CCONT
MAD
IBI Accessories
All accessories which can be connected between the transceiver and the
battery or which itself contain the battery, are called IBI accessories.
Either the phone or the IBI accessory can turn the other on, but both possibilities are not allowed in the same accessory.
Phone Power–on by IBI
IBI accessory can power the phone on by pulling the BTEMP line up to 3
V.
IBI power–on by phone
Phone can power the IBI accessory on by pulling the BTEMP line up by
MCUGenIO4 of MAD2. BTEMP measurement is not possible during this
time.
MCUGenIO4
The accessory is commanded back to power–off by MBUS message.
Issue 04/99
Page 3 – 47
NSE–1
PAMS
System Module
+1.5 V
33n
–
+
220k
BATTERY
10n
Accessory
power on
100ms
R
NTC
T
VBAT
BSI
BTEMP
GND
1k
Technical Documentation
TRANSCEIVER
VREF
100k
10k
1k
10n
D1
BTEMP
VIBRAPWM
CCONT
MAD
MCUGenIO4
Page 3 – 48
Issue 04/99
PAMS
NSE–1
Technical Documentation
RF Module
Maximum Ratings
Parameter Rating
Battery voltage, idle mode 6.0 V
Battery voltage during call, highest power level 5.0 V
Regulated supply voltage 2.8 +/– 3% V
Voltage reference 1.5 +/– 1.5% V
Operating temperature range –10...+55 deg. C
RF Frequency Plan
System Module
935–960
MHz
890–915
MHz
LO–
buffers
PLUSSACRFU_1
1st IF 71 MHz 2nd IF 13 MHz
2nd LO
58 MHz
232
MHz
13 MHz
VCTCXO
1006–
1031
MHz
TX IF 116 MHz
f
UHF
PLL
f
f/2
f
f/2f/2
VHF
PLL
Issue 04/99
Page 3 – 49
Page 3 – 50
3.6 V
Power Distribution Diagram
NSE–1
System Module
2.3 mA
VCTCXO
BUFFER
Issue 04/99
VXO
VR
1
VR
2
51 mA
CRFU,
PLUSSA
VRX
BATTERY
VR
3
18 mA
PLLs
VSYN_2
VR
4
19.5 mA
VCOs
BUFFERS
VSYN_1
VR
5
90 mA
CRFU,
PLUSSA
PA, limiter
VTX
VR
6
COBBA
ANAL.
1.35 A
PA
VR
7
NOT USED
VREF V5V
0.1 mA
PLUSSA
CRFU
VREF_1
VREF_2
1 mA
CHARGE
PUMPs
VCP
VBATT
TXP
VXOENA
SYNPWR
RXPWR
TXPWR
Technical Documentation
PAMS
PAMS
NSE–1
Technical Documentation
DC Characteristics
Regulators
Transceiver has got a multi function power management IC, which contains among other functions, also 7 pcs of 2.8 V regulators. All regulators
can be controlled individually with 2.8 V logic directly or through control
register. In GSM direct controls are used to get fast switching, because
regulators are used to enable RF–functions.
Use of the regulators can be seen in the power distribution diagram.
CCONT also provides 1.5 V reference voltage for PLUSSA and CRFU1a
( and for DACs and ADCs in COBBA too ).
Control Signals
All control signals are coming from MAD and they are 2.8 V logic signals.
System Module
Functional Description
RF block diagram has conventional dual conversion receiver and in transmitter there is a upconversion mixer for the final TX–frequency.
Architecture contains three ICs. Most of the functions are horizontally and
vertically integrated. UHF functions except power amplifier and VCO are
integrated into CRFU_1a, which is a BiCMOS–circuit suitable for LNA–
and mixer–function. Most of the functions are in PLUSSA, which also is a
BiCMOS–circuit. PLUSSA is a IF–circuit including IQ–modulator and PLLs
for VHF– and UHF–synthesizers.
Power amplifier is also an ASIC, it is a so called MMIC ( monolithic microwave integrated circuit ). It has three amplifier stages including input and
interstage matchings. Output matching network is external. Also TX gain
control is integrated into this chip.
Frequency synthesizers
Both VCOs are locked with PLLs into stable frequency source ( see figure
3 ), which is a VCTCXO–module ( voltage controlled temperature compensated crystal oscillator ). VCTCXO is running at 13 MHz. Temperature
effect is controlled with AFC ( automatic frequency control ) voltage,
VCTCXO is locked into frequency of the base station. AFC is generated
by baseband with a 11 bit conventional DAC in COBBA.
Issue 04/99
Page 3 – 51
NSE–1
PAMS
System Module
UHF PLL is located into PLUSSA. There is 64/65 (P/P+1) prescaler, N–
and A–divider, reference divider, phase detector and charge pump for the
external loop filter. UHF local signal is generated by a VCO–module (VCO
= voltage controlled oscillator ) and sample of frequency of VCO is fed to
prescaler. Prescaler is a dual modulus divider. Output of the prescaler is
fed to N– and A–divider, which produce the input to phase detector.
Phase detector compares this signal to reference signal, which is divided
with reference divider from VCTCXO output. Output of the phase detector
is connected into charge pump, which charges or discharges integrator
capacitor in the loop filter depending on the phase of the measured frequency compared to reference frequency. Loop filter filters out the pulses
and generates DC to control the frequency of UHF–VCO. Loop filter defines step response of the PLL ( settling time ) and effects to stability of
the loop, that’s why integrator capacitor has got a resistor for phase compensation. Other filter components are for sideband rejection. Dividers
are controlled via serial bus. SDATA is for data, SCLK is serial clock for
the bus and SENA1 is a latch enable, which stores new data into dividers.
HF–synthesizer is the channel synthesizer, so the channel spacing is 200
kHz. 200 kHz is reference frequency for the phase detector.
Technical Documentation
R
f
ref
f_out /
freq.
reference
AFC–controlled VCTCXO
LP
f_out
M
PHASE
DET.
CHARGE
PUMP
Kd
VCO
Kvco
M
M = A(P+1) + (N–A)P=
= NP+A
VHF PLL is also located into PLUSSA. There is 16/17 ( P/P+1 ) dual modulus prescaler, N– and A–dividers, reference divider, phase detector and
charge pump for the loop filter. VHF local signal is generated with a discrete VCO–circuit. VHF PLL works in the same way as UHF–PLL. VHF–
PLL is locked on fixed frequency, so higher reference frequency is used
to decrease phase noise.
Page 3 – 52
Issue 04/99
PAMS
NSE–1
Technical Documentation
Receiver
Receiver is a dual conversion linear receiver.
Received RF–signal from the antenna is fed via the duplex filter to LNA
(low noise amplifier ) in CRFU_1a. Active parts ( RF–transistor and biasing and AGC–step circuitry ) are integrated into this chip. Input and output
matching networks are external. Gain selection is done with PDATA0 control. Gain step in LNA is activated when RF–level in antenna is about –45
dBm. After the LNA amplified signal ( with low noise level ) is fed to bandpass filter, which is a SAW–filter ( SAW, surface acoustic wave ). Duplex
filter and RX interstage bandpass filters together define, how good are the
blocking characteristics against spurious signals outside receive band
and the protection against spurious responses, mainly the image of the
first mixer.
This bandpass filtered signal is then mixed down to 71 MHz, which is first
intermediate frequency. 1st mixer is located into CRFU_1a ASIC. This integrated mixer is a double balanced Gilbert cell. All active parts and biasing are integrated and matching components are external. Because this is
an axtive mixer it also amplifies IF–frequency. Also local signal buffering
is integrated and upper side injection is used. First local signal is generated with UHF–synthesizer.
System Module
First IF–signal is then bandpass filtered with a selective SAW–filter. From
the mixer output to IF–circuit input signal path is balanced. IF–filter provides selectivity for channels greater than +/–200 kHz. Also it attenuates
image frequency of the second mixer and intermodulating signals. Selectivity is required in this place, because of needed linearity and adjacent
channel interferers will be on too high signal level for the stages following.
Next stage in the receiver chain is AGC–amplifier. It is integrated into
PLUSSA–ASIC. AGC has analog gain control. Control voltage for the
AGC is generated with DA–converter in COBBA in baseband. AGC–stage
provides accurate gain control range ( min. 60 dB ) for the receiver. After
the AGC there is second mixer, which generates second intermediate frequency, 13 MHz. Local signal is generated in PLUSSA by dividing VHF–
synthesizer output ( 232 MHz ) by four, so the 2nd LO–frequency is 58
MHz.
2nd IF–filter is a ceramic bandpass filter at 13 MHz. It attenuates adjacent
channels, except for +/– 200 kHz there is not much attenuation. Those
+/– 200 kHz interferers are filtered digitally by the baseband . So RX
DACs are so good, that there is enough dynamic range for the faded 200
kHz interferer. Also the whole RX has to be able to handle signal levels in
a linear way. After the 13 MHz filter there is a buffer for the IF–signal,
which also converts and amplifies single ended signal from filter to balanced signal for the buffer and AD–converters in COBBA. Buffer in PLUSSA has got voltage gain of 36 dB and buffer gain setting in COBBA is 0
dB. It is possible to set gainstep ( 9.5 dB ) into COBBA via control bus, if
needed.
Issue 04/99
Page 3 – 53
NSE–1
PAMS
System Module
Transmitter
Transmitter chain consists of IQ–modulator, upconversion mixer, power
amplifier and there is a power control loop.
I– and Q–signals are generated by baseband also in COBBA–ASIC. After
post filtering ( RC–network ) they go into IQ–modulator in PLUSSA. It
generates modulated TX IF–frequency, which is VHF–synthesizer output
divided by two, meaning 116 MHz. There is also an AGC–amplifier in
PLUSSA, but it is not used in GSM. Output is set to maximum with a 5–bit
message in control register. AGC–amplifier is used in other digital systems, because PLUSSA is a core IC. After PLUSSA signal is attenuated
and filtered for upconversion into final TX–frequency in CRFU_1a. Upconversion mixer in CRFU_1a is a so called image reject mixer. It is able
to attenuate unwanted sideband in the upconverter output. Mixer itself is
a double balanced Gilbert cell. Phase shifters required for image rejection
are also integrated. Local signal needed in upconversion is generated by
the UHF–synthesizer, but buffers for the mixer are integrated into
CRFU_1a. Output of the upconverter is buffered and matching network
makes a single ended 50 ohm impedance.
Technical Documentation
Next stage is TX interstage filter, which attenuates unwanted signals from
the upconverter, mainly LO–leakage and image frequency from the upconverter. Also it attenuates wideband noise. This bandpass filter is a
SAW–filter.
After TX SAW–filter, there is a discrete transistor stage. Function of this
block is to reduce the AM–content. This feature is realized with saturated
operation of the V640 transistor. Typical input level into this amplifier is
higher than output level.
UP8P, UP8R and UP8S
NSE–1NX transceiver has three alternative Radio Modules UP8P, UP8R
or UP8S. NMP factories decide which one to use according the power
amplifier availability. The difference is not visible without opening the
transceiver and it does not have effect to the electrical performance.The
main difference between UP8P–, UP8R– and UP8S–modules in RF–circuitry is power amplifier (PA) on transmit path. Also first IF–filter ( IF = intermediate frequency ) on UP8S is bought from different vendor. Specification for the filter (Z621) is almost the same.UP8R PA is based on MMIC
(monolithic microwave integrated circuit) with 3 amplifier stages and voltage linear gain control function. UP8P and UP8S is using 3–stage hybrid
with voltage linear gain control. Technologies used for semiconductors
are Si–BJT in UP8P and UP8S and GaAs–HBT in UP8R. On UP8P and
UP8R there is a surface mounted shield around the PA–circuit, on UP8S–
modules PA–component is shielded itself.Power control circuitry is very
similar in all three cases. Power control is using similar kind of directional
couplers for sampling the forward going output power from the PA. Also
detector is exactly same kind of peak detector. Also restof the power control circuits (error amplifier and dominating pole) are quite very similar.
Page 3 – 54
Issue 04/99
PAMS
NSE–1
Technical Documentation
There is slight difference, how the dominating pole of the control loop is
set. Gain control characteristics in both PAs are similar kind of. Gain is
linear on voltage scale as function of control voltage. Software controlling
these circuits is same except some parameters for timing setting. SW
reads which one of the printed circuit boards is used and sets the parameters accordinly. So the same SW is used in UP8P, UP8R and
UP8S.From EMC point of view same choke is used in battery voltage line.
Due the layout difference, capacitor values for filtering emissions out from
battery voltage line are slightly different. Duplex–filter is same on both
modules, but UP8S is using extra low–pass section for harmonic rejection
(L554 and C560).On the RX–section the 71 MHz IF–filter is having slightly different component values for matching. Specification for these filters
are similar, what comes to : insertion loss, selectivity, group delay, passband bandwidth or farband rejection. Impedance level of the filters differ
slightly, that’s why different values for components,but topology and layout are same.
UP8R:
System Module
The final amplication is realized with third IC, power amplifier is a MMIC.
It has a 50 ohm input, output requires an external matching network.
MMIC contains three amplifier stages and interstage matchings. Also
there is a gain control, which is controlled with a power control loop. PA
has over 35 dB power gain and it is able to produce 2.5 W into output with
0 dBm input level. Gain control range is over 35 dB to get desired power
levels and power ramping up and down.
Harmonics generated by the nonlinear PA ( class AB ) are filtered out with
the matching network and lowpass/bandstop filtering in the duplexer.
Bandstop is required because of wideband noise located on RX–band.
UP8S:
The power amplifier on this module is a 3–stage hybrid which has all
matching networks and gain control fuction integrated in.
Power control circuitry consists of power detector in the PA output and error amplifier in PLUSSA. There is a directional coupler connected between PA output and duplex filter. It takes a sample from the forward going power with certain ratio. This signal is rectified in a schottky–diode
and it produces a DC–signal signal after filtering. This peak–detector is
linear on absolute scale, except it saturates on very low and high power
levels – it produces a S–shape curve.
This detected voltage is compared in the error–amplifier in PLUSSA to
TXC–voltage, which is generated by DA–converter in COBBA. Because
also gain control characteristics in PA are linear in absolute scale, control
loop defines a voltage loop, when closed. Closed loop tracks the TXC–
voltage quite linearilly. TXC has got a raised cosine form (cos
which reduces switching transients, when pulsing power up and down.
Because dynamic range of the detector is not wide enough to control the
power ( actually RF output voltage ) over the whole range, there is a control named TXP to work under detected levels. Burst is enabled and set to
Issue 04/99
4
– function),
Page 3 – 55
NSE–1
PAMS
System Module
RF_OUT
DETECTOR
Technical Documentation
rise with TXP until the output level is high enough, that feedback loop
works. Loop controls the output via the control pin in PA MMIC to the desired output level and burst has got the waveform of TXC–ramps. Because feedback loops could be unstable, this loop is compensated with a
dominating pole. This pole decreases gain on higher frequencies to get
phase margins high enough.
PADIR.COUPLER
RF_IN
K
cp
R1
K
K
det
R2
= –R1/R2
ERROR
AMPLIFIER
R
K
PA
C
DOMINATING
POLE
TXC
Page 3 – 56
Issue 04/99
PAMS
NSE–1
Technical Documentation
AGC strategy
AGC–amplifier is used to maintain output level of the receiver almost
constant. AGC has to be set before each received burst, this is called
pre–monitoring. Receiver is switched on roughly 150 ms before the burst
begins, DSP measures received signal level and adjusts RXC, which controls RX AGC–amplifier or it switches off the LNA with PDATA0 control
line. This pre–monitoring is done in three phases and this sets the settling
times for RX AGC. Pre–monitoring is required because of linear receiver,
received signal must be in full swing, no clipping is allowed and because
DSP doesn’t know, what is the level going to be in next burst.
There is at least 60 dB accurate gain control ( continous, analog ) and
one digital step in LNA. It is typically about 30...35 dB.
RSSI must be measured on range –48...–110 dBm. After –48 dBm level
MS reports to base station the same reading.
Because of RSSI–requirements, gain step in LNA is used roughly on –45
dBm RF–level and up to –10 dBm input RF–level accurate AGC is used
to set RX output level. LNA is ON below –45 dBm. from –45 dBm down to
–95 dBm this accurate AGC in PLUSSA is used to adjust the gain to desired value. RSSI–function is in DSP, but it works out received signal level
by measuring RX IQ–level after all selectivity filtering ( meaning IF–filters,
Σ∆±converter and FIR–filter in DSP). So 50 dB accurate AGC dynamic
range is required. Remaining 10 dB is for gain variations in RX–chain ( for
calibration ). Below –95 dBm RF–levels, output level of the receiver drops
dB by dB. At –95 dBm level output of the receiver gives 50 mVpp
differentially. This is the target value for DSP. Below this it drops down to
ca. 9 mVpp differentially @ –110 dBm RF–level.
System Module
This strategy is chosen because we have to roll off the AGC in PLUSSA
early enough, that it won’t saturate in selectivity tests. Also we can’t start
too early, then we will sacrifice the signal to noise ratio and it would require more accurate AGC dynamic range. 50 mVpp target level is set,
because RX–DAC will saturate at 1.4 Vpp. This over 28 dB headroom is
required to have margin for +/– 200 kHz faded adjacent channel ( ca. 19
dB ) and extra 9 dB for pre–monitoring.
Production calibration is done with two RF–levels, LNA gain step is not
calibrated. Gain changes in the receiver are taken off from the dynamic
range of accurate AGC. Variable gain stage in PLUSSA is designed in a
way, that it is capable of compensating itself, there is good enough margin in AGC.
Issue 04/99
Page 3 – 57
NSE–1
PAMS
System Module
AFC function
AFC is used to lock the transceivers clock to frequency of the base station. AFC–voltage is generated in COBBA with 11 bit AD–converter.
There is a RC–filter in AFC control line to reduce the noise from the converter. Settling time requirement for the RC–network comes from signalling, how often PSW ( pure sine wave ) slots occur. They are repeated after 10 frames , meaning that there is PSW in every 46 ms. AFC tracks
base station frequency continously, so transceiver has got a stable frequency, because changes in VCTCXO–output don’t occur so fast ( temperature ). Settling time requirement comes also from the start up–time
allowed. When transceiver is in sleep mode and ”wakes” up to receive
mode , there is only about 5 ms for the AFC–voltage to settle. When the
first burst comes in system clock has to be settled into +/– 0.1 ppm frequency accuracy. The VCTCXO–module requires also 5 ms to settle into
final frequency. Amplitude rises into full swing in 1 ... 2 ms, but frequency
settling time is higher so this oscillator must be powered up early enough.
Technical Documentation
Receiver blocks
RX interstage filter
Parameter Min. Typ. Max. Unit
Passband 935 – 960 MHz
Insertion loss 3.8 dB
Maximum drive level +10 dBm
1st mixer in CRFU_1a
Parameter Min. Typ./
Nom.
Supply voltage 2.7 2.8 2.85 V
RX frequency range 935 960 MHz
LO frequency range 1006 1031 MHz
IF frequency 71 MHz
Output resistance (balanced) 10 k ohm
Max. Unit/Notes
1st IF–filter
Parameter min. typ. max. unit
Operating temperature range –20 +75 deg.C
Center frequency , fo 71 MHz
Maximum ins. loss at 1dBBW 11 dB
Page 3 – 58
Issue 04/99
PAMS
NSE–1
Technical Documentation
System Module
Transmitter Blocks
TX interstage filter
Parameter Min. Typ. Max. Unit
Passband 890 – 915 MHz
Insertion loss 3.8 dB
Power amplifier MMIC
Parameter Symbol Test condition Min Typ Max Unit
Operating freq. range 880 915 MHz
Supply voltage Vcc 3.1 3.5 5.0 V
Gain control range
( overall dynamic
range)
Vpc= 0.5 ... 2.2 V 45 dB
Synthesizer blocks
VHF VCO and low pass filter
Parameter Min. Typ. Max. Unit/Notes
Supply voltage range 2.7 2.8 2.58 V
Current consumption 4 7 mA
Control voltage 0.5 4.0 V
Operation frequency 232 MHz
Output level –13 –10 dBm ( output after
the lowpass filter )
UHF PLL
UHF PLL block in PLUSSA
Parameter Min. Typ. Max. Unit/notes
Input frequency range 650 1300 MHz
Reference input level 100 mVpp
Reference input frequency 30 MHz
Reference input impedance tbd.
Issue 04/99
Page 3 – 59
NSE–1
PAMS
System Module
Technical Documentation
UHF VCO module
Parameter Conditions Rating Unit/
Supply voltage, Vcc 2.8 +/– 0.1 V
Supply current, Icc Vcc = 2.8 V,
Vc= 2.25 V
Control voltage, Vc Vcc = 2.8 V 0.8... 3.7 V
Oscillation frequency Vcc = 2.8 V
Vc = 0.8 V
Vc = 3.7 V
Tuning voltage in center frequency f = 1018.5 MHz 2.25 +/– 0.25 V
Tuning voltage sensitivity in operating
frequency range on each spot freq.
Output power level Vcc=2.7 V
Vcc = 2.8 V
f=1006...1031
MHz
f=1006...1031
MHz
< 10 mA
< 1006
> 1031
14 +/– 2 MHz/V
–6.0 min. dBm
Notes
MHz
MHz
UHF local signal input in CRFU_1a
Parameter Min. Typ. Max. Unit/Notes
Input frequency range 990 1040 MHz
Input level 200 700 mVpp
Connections
RF connector and antenna switch
Parameter Min. Typ. Max. Unit/Notes
Operating frequency range 890 960 MHz
Insertion loss, COM to INT 0.2 dB
Insertion loss, COM to EXT 0.4 dB
Nominal impedance 50 ohm
Return loss 15
Signal
name
VBATT Battery RF Voltage 3.0 3.6 5.0/6.0 V Supply voltage for
VXOE-NAMAD CCONT
From To Parameter Mini-
mum
Logic high ”1” 2.0 2.85 V VR1, VR6 in
Logic low ”0” 0 0.8 V VR1, VR6 in
Typi-
cal
Maximum
Unit Function
RF
CCONT ON
CCONT OFF
Page 3 – 60
Issue 04/99
PAMS
O
signal for the logic
for the RF modu
NSE–1
Technical Documentation
ParameterToFromSignal
name
SYNPWRMAD CCONT
RXPWRMAD CCONT
TXPWRMAD CCONT
VREF CCONTPLUSSA Voltage 1.478 1.5 1.523 V Reference voltage
Logic high ”1” 2.0 2.85 V VR3, VR4 in
Logic low ”0” 0 0.8 V VR3,VR4 in
Logic high ”1” 2.0 2.85 V VR2, VR5 in
Logic low ”0” 0 0.8 V VR2, VR5 in
Logic high ”1” 2.0 2.85 V VR7 in CCONT
Logic low ”0” 0 0.8 V VR7 in CCONT
Mini-
mum
Typi-
cal
mum
System Module
FunctionUnitMaxi-
CCONT ON
CCONT OFF
CCONT ON
CCONT OFF
ON
OFF
for PLUSSA and
CRFU1a
PDATA0
SENA1 MAD PLUSSA
SDATA MAD PLUSSA
SCLK MAD PLUSSA
AFC COB-BAVCTCXOVoltage 0.046 2.254 V Automatic fre-
RFC VCTCX
RXIP/
RXIN
MAD CRFU_1
a
MAD
PLUS-SACOBBA Output level 50 1344 mVppDifferential RX 13
Logic high ”1” 2.0 2.85 V Nominal gain in
LNA
Logic low ”0” 0 0.8 V Reduced gain in
LNA
Logic high ”1” 2.0 2.85 V
Logic low ”0” 0 0.8 V
Logic high ”1” 2.0 2.85 V
Logic low ”0” 0 0.8 V
Logic high ”1” 2.0 2.85 V
Logic low ”0” 0 0.8 V
Frequency 13 MHz
Signal amplitude 0.5 1.0 2.0 Vpp
PLL enable
Synthesizer data
Synthesizer clock
quency control
signal for
VC(TC)XO
High stability clock
circuits
MHz signal to
baseband
TXIP/
TXIN
TXQP/
TXQN
COB-BAPLUSSA
COB-BAPLUSSA
Issue 04/99
Differential voltage
swing
DC level 0.784 0.8 0.816 V
Differential voltage
swing
DC level 0.784 0.8 0.816 V
0.75
x
1.022
0.75
x
1.022
0.75 x
1.1
0.75 x
1.1
0.75 x
1.18
0.75 x
1.18
Vpp
Vpp
Differential in–
phase TX base-
band signal for the
RF modulator
Differential quad-
rature phase TX
baseband signal
-
lator
Page 3 – 61
NSE–1
BA
control
PAMS
System Module
name
TXP MAD PLUSSA
TXC COB-
RXC COB-BAPLUSSA
PLUSSA
Technical Documentation
ParameterToFromSignal
Logic high ”1” 2.0 2.85 V
Logic low ”0” 0 0.8 V
Voltage Min 0.12 0.18 V
Voltage Max 2.27 2.33 V
Voltage Min 0.12 0.18 V
Voltage Max 2.27 2.33 V
Mini-
mum
Typi-
cal
mum
FunctionUnitMaxi-
Transmitter power
control enable
Transmitter power
Receiver gain
control
Page 3 – 62
Issue 04/99
PAMS
NSE–1
Technical Documentation
Timings
Synthesizer control timing
100 us
min.
RXPWR
SYNTHPWR
SENA
10 us 10 us
6.9 ms ( 1.5 x 4.6 ms ( frame )
min. min. min. min.
10 us
2us min
10 us
System Module
8 us
SDATA/
SCLK
VXOENA
SYNTHPWR
RXPWR
RXC
SENA
SDATA/
SCLK
MODE VHF R VHF N/A UHF R UHF N/A
#bits 23 23 23 23 23
Synthesizer Start–up Timing / clocking
MON MON MON MONRX RX RX RX
20 ms
6.9 ms
150 us 150 us
4.6 ms
0.5–2 sec.
Issue 04/99
Synthesizer Timing / IDLE,
one monitoring frame,
frame can start also from RX–burst
Page 3 – 63
NSE–1
PAMS
System Module
VXOENA
SYNTHPWR
RXPWR
RXC
SENA
SDATA/
SCLK
Technical Documentation
In case of long list of adjacent channels, there might be two monitoring–
bursts/frame. Extra monitoring ”replaces” TX–burst.
MON MON MON MONRX RX RX RX
20 ms
6.9 ms
150 us 150 us
MON MON MON
4.6 ms
0.5–2 sec.
SYNTHPWR
TXPWR
TXP
TXC
RXPWR
RXC
SENA
SDATA/
SCLK
Synthesizer Timing / IDLE 2, frame can start from RX–burst
MON MON MON MONRX RX RX RX
150 us
150 us 150 us
TX TX TX
Page 3 – 64
Sunthesizer Timing / traffic channel
Issue 04/99
PAMS
NSE–1
Technical Documentation
Transmitter power switching timing diagram
542.8 us
Pout
8.3..56.7 us
TXC
TXP
0...56.7 us
System Module
0...58 us
TXPWR
150 us 50 us
Synthesizer clocking
Synthesizers are controlled via serial control bus, which consists of SDATA, SCLK and SENA1 signals. These lines form a synchronous data
transfer line. SDATA is for the data bits, SCLK is 3.25 MHz clock and
SENA1 is latch enable, which stores the data into counters or registers.
Issue 04/99
Page 3 – 65
NSE–1
PAMS
System Module
Block Diagram of Baseband Blocks
REGULATORS
CHARGER
CHAPS
N101
SO16
CHR_CONTR
VBATT
BACK UP
BATTERY
G100
32 kHz
EEPROM
2k*8
D240
SO8
SIO
FLASH
512k*16
D210
TSOP48
memory control
lines: CE,WE...
MCUDa 15...0
MCUAd 19...1
BB
A/D CONV.
CNTVR 4...0
RF
REGULATORS
CCONT
N100
SQFP64
SIMIF 4...0
MAD2
D200
MCU
ASIC
32 kHz
CRYSTAL
SIMCARD 3...0
X300
PwrOnX
GenSIO,LCDEn,CCONTCSX
BUZZER
KBLIGHTS
ROW 5...0
COL 4...0
Technical Documentation
SIM
READER
X302
UI BOARD
DISPLAY
KEYBOARD
RF
UNIT
PData0
TxP
Synthe Control
N500
N620
N620
SRAM
64k*8
128k*8
D221
TSOP32
X100
MCUAd 16..0
MCUDa 7...0
XEAR
XMIC
SYSTEM
CONNECTOR
Page 3 – 66
N250
MBUS
FBUS
DSP
SQFP176
CobbaAd 3...0
CobbaDa 11...0
PCM 3...0
RFC
13 MHz / 1 Vpp
from VCXO (G600)
MICP
MICN
RFI
COBBA
N250
CODEC
SQFP64
Issue 04/99
TxIN,TxIP
TxQN,TxQP
RxInN,RxInP
AFC
TxC N620
RxC
UI BOARD
EARP
EARN
N620
N620
N620
N620
PAMS
NSE–1
Technical Documentation
System Module
Parts list of UP8P (EDMS Issue 3.1) Layout 01 Code: 0201323
ITEM CODE DESCRIPTION VALUE TYPE
R100 1430826 Chip resistor 680 k 5 % 0.063 W 0402
R102 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R103 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402
R104 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R109 1620017 Res network 0w06 2x100r j 0404 0404
R113 1430726 Chip resistor 100 5 % 0.063 W 0402
R116 1430788 Chip resistor 22 k 5 % 0.063 W 0402
R118 1430778 Chip resistor 10 k 5 % 0.063 W 0402
R120 1620025 Res network 0w06 2x100k j 0404 0404
R122 1620019 Res network 0w06 2x10k j 0404 0404
R124 1620027 Res network 0w06 2x47r j 0404 0404
R127 1620031 Res network 0w06 2x1k0 j 0404 0404
R128 1430718 Chip resistor 47 5 % 0.063 W 0402
R131 1422881 Chip resistor 0.22 5 % 1 W 1218
R136 1430804 Chip resistor 100 k 5 % 0.063 W 0402
R143 1430834 Chip resistor 3.3 M 5 % 0.063 W 0402
R144 1414364 Chip resistor 4.7 M 5 % 0.1 W 0805
R152 1430690 Chip jumper 0402
R154 1430325 Chip resistor 2.2 M 5 % 0.063 W 0603
R201 1430812 Chip resistor 220 k 5 % 0.063 W 0402
R202 1430804 Chip resistor 100 k 5 % 0.063 W 0402
R203 1620029 Res network 0w06 2x4k7 j 0404 0404
R211 1430804 Chip resistor 100 k 5 % 0.063 W 0402
R213 1430690 Chip jumper 0402
R215 1620023 Res network 0w06 2x47k j 0404 0404
R252 1430740 Chip resistor 330 5 % 0.063 W 0402
R254 1620027 Res network 0w06 2x47r j 0404 0404
R256 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R257 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R259 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R260 1430788 Chip resistor 22 k 5 % 0.063 W 0402
R261 1430788 Chip resistor 22 k 5 % 0.063 W 0402
R263 1430778 Chip resistor 10 k 5 % 0.063 W 0402
R265 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R267 1430754 Chip resistor 1.0 k 5 % 0.063 W 04026
R268 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402
R270 1430804 Chip resistor 100 k 5 % 0.063 W 0402
R271 1430804 Chip resistor 100 k 5 % 0.063 W 0402
R301 1620031 Res network 0w06 2x1k0 j 0404 0404
R303 1620031 Res network 0w06 2x1k0 j 0404 0404
R305 1620027 Res network 0w06 2x47r j 0404 0404
R307 1620031 Res network 0w06 2x1k0 j 0404 0404
R308 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402
Issue 04/99
Page 3 – 67
NSE–1
PAMS
System Module
R309 1620031 Res network 0w06 2x1k0 j 0404 0404
R500 1430700 Chip resistor 10 5 % 0.063 W 0402
R501 1430700 Chip resistor 10 5 % 0.063 W 0402
R502 1430764 Chip resistor 3.3 k 5 % 0.063 W 0402
R504 1620019 Res network 0w06 2x10k j 0404 0404
R507 1430740 Chip resistor 330 5 % 0.063 W 0402
R530 1430700 Chip resistor 10 5 % 0.063 W 0402
R531 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R533 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R550 1430752 Chip resistor 820 5 % 0.063 W 0402
R551 1430740 Chip resistor 330 5 % 0.063 W 0402
R552 1430740 Chip resistor 330 5 % 0.063 W 0402
R553 1430774 Chip resistor 6.8 k 5 % 0.063 W 0402
R554 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402
R555 1430726 Chip resistor 100 5 % 0.063 W 0402
R572 1430744 Chip resistor 470 5 % 0.063 W 0402
R574 1820031 NTC resistor 330 10 % 0.12 W 0805
R580 1430706 Chip resistor 15 5 % 0.063 W 0402
R581 1430832 Chip resistor 2.7 k 5 % 0.063 W 0402
R582 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R584 1430780 Chip resistor 12 k 5 % 0.063 W 0402
R585 1430774 Chip resistor 6.8 k 5 % 0.063 W 0402
R586 1430738 Chip resistor 270 5 % 0.063 W 0402
R588 1430744 Chip resistor 470 5 % 0.063 W 0402
R589 1430710 Chip resistor 22 5 % 0.063 W 0402
R600 1430788 Chip resistor 22 k 5 % 0.063 W 0402
R620 1620029 Res network 0w06 2x4k7 j 0404 0404
R621 1430744 Chip resistor 470 5 % 0.063 W 0402
R622 1430758 Chip resistor 1.5 k 5 % 0.063 W 0402
R623 1430714 Chip resistor 33 5 % 0.063 W 0402
R624 1430726 Chip resistor 100 5 % 0.063 W 0402
R625 1430714 Chip resistor 33 5 % 0.063 W 0402
R626 1430740 Chip resistor 330 5 % 0.063 W 0402
R627 1430776 Chip resistor 8.2 k 5 % 0.063 W 0402
R628 1430744 Chip resistor 470 5 % 0.063 W 0402
R629 1430730 Chip resistor 150 5 % 0.063 W 0402
R630 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R631 1430700 Chip resistor 10 5 % 0.063 W 0402
R632 1430848 Chip resistor 12 k 1 % 0.063 W 0402
R634 1430848 Chip resistor 12 k 1 % 0.063 W 0402
R635 1430851 Chip resistor 15 k 2 % 0.063 W 0402
R636 1430848 Chip resistor 12 k 1 % 0.063 W 0402
R638 1430848 Chip resistor 12 k 1 % 0.063 W 0402
R640 1430734 Chip resistor 220 5 % 0.063 W 0402
R641 1820031 NTC resistor 330 10 % 0.12 W 0805
R642 1430700 Chip resistor 10 5 % 0.063 W 0402
R660 1430726 Chip resistor 100 5 % 0.063 W 0402
Technical Documentation
Page 3 – 68
Issue 04/99
PAMS
NSE–1
Technical Documentation
R662 1430714 Chip resistor 33 5 % 0.063 W 0402
R664 1430764 Chip resistor 3.3 k 5 % 0.063 W 0402
R666 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402
R668 1430732 Chip resistor 180 5 % 0.063 W 0402
R670 1430726 Chip resistor 100 5 % 0.063 W 0402
R706 1430812 Chip resistor 220 k 5 % 0.063 W 0402
R708 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R710 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R712 1430714 Chip resistor 33 5 % 0.063 W 0402
C100 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C101 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C102 2320538 Ceramic cap. 12 p 5 % 50 V 0402
C103 2604127 Tantalum cap. 1.0 u 20 % 35 V 3.5x2.8x1.9
C104 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C105 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C106 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C107 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C108 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C109 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C110 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C112 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C113 2320508 Ceramic cap. 1.0 p 0.25 % 50 V 0402
C114 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C115 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C117 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C118 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C119 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C120 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C121 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C122 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C127 2310784 Ceramic cap. 100 n 10 % 25 V 0805
C128 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C129 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C130 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C131 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C132 2312403 Ceramic cap. 2.2 u 10 % 10 V 1206
C133 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C140 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C142 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C143 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C146 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C160 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C161 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C201 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C202 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C203 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C204 2320620 Ceramic cap. 10 n 5 % 16 V 0402
System Module
Issue 04/99
Page 3 – 69
NSE–1
PAMS
System Module
C205 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C206 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C207 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C208 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C209 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C211 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C212 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C213 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C221 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C231 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C247 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C248 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C249 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C251 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C252 2312296 Ceramic cap. Y5 V 1210
C253 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C254 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C255 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C256 2312296 Ceramic cap. Y5 V 1210
C257 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C258 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C260 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C261 2310784 Ceramic cap. 100 n 10 % 25 V 0805
C262 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C263 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C266 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C268 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C269 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C271 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C272 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C301 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C302 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C303 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C304 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C305 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C306 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C307 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C308 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C309 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C310 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C311 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C312 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C313 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C500 2320530 Ceramic cap. 5.6 p 0.25 % 50 V 0402
C501 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C502 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C504 2320534 Ceramic cap. 8.2 p 0.25 % 50 V 0402
Technical Documentation
Page 3 – 70
Issue 04/99
PAMS
NSE–1
Technical Documentation
C505 2320550 Ceramic cap. 39 p 5 % 50 V 0402
C506 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C507 2320550 Ceramic cap. 39 p 5 % 50 V 0402
C511 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C512 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C513 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C514 2320540 Ceramic cap. 15 p 5 % 50 V 0402
C515 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C516 2320530 Ceramic cap. 5.6 p 0.25 % 50 V 0402
C518 2320532 Ceramic cap. 6.8 p 0.25 % 50 V 0402
C520 2320602 Ceramic cap. 4.7 p 0.25 % 50 V 0402
C530 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C531 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C532 2320554 Ceramic cap. 56 p 5 % 50 V 0402
C535 2310181 Ceramic cap. 1.5 n 5 % 50 V 1206
C540 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C550 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C553 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C554 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C570 2310784 Ceramic cap. 100 n 10 % 25 V 0805
C576 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C582 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C583 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C585 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C586 2320540 Ceramic cap. 15 p 5 % 50 V 0402
C587 2310248 Ceramic cap. 4.7 n 5 % 50 V 1206
C588 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C590 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C592 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C600 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C601 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C602 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C603 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C604 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C610 2610013 Tantalum cap. 220 u 10 % 10 V 7.3x4.3x4.1
C611 2610013 Tantalum cap. 220 u 10 % 10 V 7.3x4.3x4.1
C612 2610013 Tantalum cap. 220 u 10 % 10 V 7.3x4.3x4.1
C613 2320538 Ceramic cap. 12 p 5 % 50 V 0402
C614 2320526 Ceramic cap. 3.9 p 0.25 % 50 V 0402
C621 2320534 Ceramic cap. 8.2 p 0.25 % 50 V 0402
C622 2320514 Ceramic cap. 1.2 p 0.25 % 50 V 0402
C623 2320534 Ceramic cap. 8.2 p 0.25 % 50 V 0402
C624 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C627 2320738 Ceramic cap. 470 p 10 % 50 V 0402
C630 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C632 2320530 Ceramic cap. 5.6 p 0.25 % 50 V 0402
C633 2320532 Ceramic cap. 6.8 p 0.25 % 50 V 0402
System Module
Issue 04/99
Page 3 – 71
NSE–1
PAMS
System Module
C635 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C636 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C638 2320552 Ceramic cap. 47 p 5 % 50 V 0402
C639 2320592 Ceramic cap. 2.2 n 5 % 50 V 0402
C640 2310784 Ceramic cap. 100 n 10 % 25 V 0805
C641 2310784 Ceramic cap. 100 n 10 % 25 V 0805
C642 2320552 Ceramic cap. 47 p 5 % 50 V 0402
C643 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C644 2320540 Ceramic cap. 15 p 5 % 50 V 0402
C649 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C652 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C653 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C655 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C660 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C662 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C695 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C700 2320524 Ceramic cap. 3.3 p 0.25 % 50 V 0402
L103 3203701 Ferrite bead 33r/100mhz 0805 0805
L104 3203701 Ferrite bead 33r/100mhz 0805 0805
L105 3203701 Ferrite bead 33r/100mhz 0805 0805
L106 3640035 Filt z>450r/100m 0r7max 0.2a 0603 0603
L107 3640035 Filt z>450r/100m 0r7max 0.2a 0603 0603
L108 3640035 Filt z>450r/100m 0r7max 0.2a 0603 0603
L500 3643039 Chip coil 220 n 5 % Q=35/100 MHz 0805
L501 3643039 Chip coil 220 n 5 % Q=35/100 MHz 0805
L550 3640069 Filt 47pf 25v 0r01 6a 1206
L580 3645161 Chip coil 150 n 5 % Q=14/100 MHz 0603
L581 3643025 Chip coil 56 n 5 % Q=40/200 MHz 0805
L600 3641206 Chip coil 10% Q=25/7.96MHz 1008
L621 3641300 Chip coil 330 n 5 % Q=30/25 MHz 1008
L623 3641626 Chip coil 220 n 2 % Q=30/100 MHz 0805
L624 3641626 Chip coil 220 n 2 % Q=30/100 MHz 0805
B100 4510159 Crystal 32.768 k +–20PPM
G530 4350099 Vco 1006–1031mhz 2.8v 10ma gsm
G600 4510153 VCTCXO 13.0 M +–5PPM 2.8V GSM
F101 5119019 SM, fuse f 1.5a 32v 0603
Z500 4511017 Saw filter 947.5+–12.5 M /3.8DB 4X4
Z505 4511015 Saw filter 902.5+–12.5 M /3.8DB 4X4
Z550 4512071 Dupl 890–915/935–960mhz 20x14 20x14
Z620 4510009 Cer.filt 13+–0.09mhz 7.2x3.2 7.2x3.2
Z621 4510137 Saw filter 71+–0.09 M 14.2x8.4
V100 1825005 Chip varistor vwm14v vc30v 0805 0805
V101 4113651 Trans. supr. QUAD 6 V SOT23–5
V102 4113651 Trans. supr. QUAD 6 V SOT23–5
V103 4113601 Emi filter emif01–5250sc5 sot23–5 SOT23–5
V104 4113651 Trans. supr. QUAD 6 V SOT23–5
V116 4110067 Schottky diode MBR0520L 20 V 0.5 A SOD123
Technical Documentation
Page 3 – 72
Issue 04/99
PAMS
NSE–1
Technical Documentation
V250 4210100 Transistor BC848W npn 30 V SOT323
V550 4110014 Sch. diode x 2 BAS70–07 70 V 15 mA SOT143
V580 4110062 Cap. diode BB535 30 V 2.1/18.7PFSOD323
V581 4210066 Transistor BFR93AW npn 12 V 35 mA SOT323
V640 4210066 Transistor BFR93AW npn 12 V 35 mA SOT323
V705 4210100 Transistor BC848W npn 30 V SOT323
D200 4370415 Mad2 rom4 v14 f721727 c10 tqfp176TQFP176
D211 4340261 IC, flash mem. TSO48
D220 4340273 IC, SRAM STSOP32
D240 4343280 IC, EEPROM 2kx8 bit SO8S
N100 4370391 Ccont2h dct3 bb asic tqfp64 TQFP64
N101 4370165 Chaps charger control so16 SO16
N202 4340435 R1120n301b reg 3v/150ma sot23–5 SOT23–5
N250 4370363 Cobba_gj b09 bb asic tqfp64 TQFP64
N500 4370253 Crfu1a rx+tx uhf gsm v5 sot401–1 SOT401–1
N550 4350163 IC, pow.amp. 3.5 V 3 W SOT482B
N621 4370351 Summa v2 rx,tx,pll,pcontr. tqfp48 TQFP48
X100 5469061 SM, system conn 6af+3dc+mic+jack
X101 5469069 SM, batt conn 2pol spr p3.5 100v 100V2A
X102 5469069 SM, batt conn 2pol spr p3.5 100v 100V2A
X300 5460021 SM, conn 2x14m spring p1.0 pcb/p PCB/PCB
X302 5400085 Sim card reader 2x3pol p2.54 sm SM
X540 5429007 SM, coax conn m sw 50r 0.4–2ghz
A500 9517012 SM, d rf shield dmc00422 hd940 u UP8
A510 9517013 SM, d rf shield pa–can dmc00455
9380753 Bar code label dmd03311 27x6.5 27x6.5
9854349 PCB UP8P 123.3X41.0X0.9 M6 4/PA
System Module
Issue 04/99
Page 3 – 73
NSE–1
PAMS
System Module
Technical Documentation
Parts list of UP8R (EDMS Issue 3.2) Layout 15 Code: 0201190
ITEM CODE DESCRIPTION VALUE TYPE
R100 1430826 Chip resistor 680 k 5 % 0.063 W 0402
R102 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R103 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402
R104 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R109 1620017 Res network 0w06 2x100r j 0404 0404
R113 1430726 Chip resistor 100 5 % 0.063 W 0402
R116 1430788 Chip resistor 22 k 5 % 0.063 W 0402
R118 1430778 Chip resistor 10 k 5 % 0.063 W 0402
R120 1620025 Res network 0w06 2x100k j 0404 0404
R122 1620019 Res network 0w06 2x10k j 0404 0404
R124 1620027 Res network 0w06 2x47r j 0404 0404
R127 1620031 Res network 0w06 2x1k0 j 0404 0404
R128 1430718 Chip resistor 47 5 % 0.063 W 0402
R131 1422881 Chip resistor 0.22 5 % 1 W 1218
R136 1430804 Chip resistor 100 k 5 % 0.063 W 0402
R140 1430690 Chip jumper 0402
R142 1430690 Chip jumper 0402
R143 1430834 Chip resistor 3.3 M 5 % 0.063 W 0402
R152 1430690 Chip jumper 0402
R154 1430122 Chip resistor 4.7 M 5 % 0.063 W 0603
R201 1430812 Chip resistor 220 k 5 % 0.063 W 0402
R202 1430804 Chip resistor 100 k 5 % 0.063 W 0402
R203 1620029 Res network 0w06 2x4k7 j 0404 0404
R211 1430804 Chip resistor 100 k 5 % 0.063 W 0402
R213 1430690 Chip jumper 0402
R215 1620023 Res network 0w06 2x47k j 0404 0404
R252 1430740 Chip resistor 330 5 % 0.063 W 0402
R254 1620027 Res network 0w06 2x47r j 0404 0404
R256 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R257 1430820 Chip resistor 470 k 5 % 0.063 W 0402
R259 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R260 1430788 Chip resistor 22 k 5 % 0.063 W 0402
R261 1430788 Chip resistor 22 k 5 % 0.063 W 0402
R263 1430778 Chip resistor 10 k 5 % 0.063 W 0402
R265 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R267 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402
R268 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402
R270 1430804 Chip resistor 100 k 5 % 0.063 W 0402
R271 1430804 Chip resistor 100 k 5 % 0.063 W 0402
R301 1620031 Res network 0w06 2x1k0 j 0404 0404
R303 1620031 Res network 0w06 2x1k0 j 0404 0404
R305 1620031 Res network 0w06 2x1k0 j 0404 0404
R307 1620031 Res network 0w06 2x1k0 j 0404 0404
Page 3 – 74
Issue 04/99
PAMS
NSE–1
Technical Documentation
R308 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402
R309 1620031 Res network 0w06 2x1k0 j 0404 0404
R500 1430700 Chip resistor 10 5 % 0.063 W 0402
R501 1430700 Chip resistor 10 5 % 0.063 W 0402
R502 1430764 Chip resistor 3.3 k 5 % 0.063 W 0402
R504 1620019 Res network 0w06 2x10k j 0404 0404
R507 1430740 Chip resistor 330 5 % 0.063 W 0402
R530 1430700 Chip resistor 10 5 % 0.063 W 0402
R531 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R533 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R550 1430752 Chip resistor 820 5 % 0.063 W 0402
R551 1430740 Chip resistor 330 5 % 0.063 W 0402
R552 1430740 Chip resistor 330 5 % 0.063 W 0402
R553 1430774 Chip resistor 6.8 k 5 % 0.063 W 0402
R554 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402
R555 1430726 Chip resistor 100 5 % 0.063 W 0402
R580 1430706 Chip resistor 15 5 % 0.063 W 0402
R581 1430832 Chip resistor 2.7 k 5 % 0.063 W 0402
R582 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R584 1430780 Chip resistor 12 k 5 % 0.063 W 0402
R585 1430774 Chip resistor 6.8 k 5 % 0.063 W 0402
R586 1430738 Chip resistor 270 5 % 0.063 W 0402
R588 1430744 Chip resistor 470 5 % 0.063 W 0402
R589 1430710 Chip resistor 22 5 % 0.063 W 0402
R600 1430788 Chip resistor 22 k 5 % 0.063 W 0402
R620 1620029 Res network 0w06 2x4k7 j 0404 0404
R621 1430744 Chip resistor 470 5 % 0.063 W 0402
R622 1430758 Chip resistor 1.5 k 5 % 0.063 W 0402
R623 1430714 Chip resistor 33 5 % 0.063 W 0402
R624 1430714 Chip resistor 33 5 % 0.063 W 0402
R625 1430714 Chip resistor 33 5 % 0.063 W 0402
R626 1430740 Chip resistor 330 5 % 0.063 W 0402
R627 1430776 Chip resistor 8.2 k 5 % 0.063 W 0402
R628 1430744 Chip resistor 470 5 % 0.063 W 0402
R629 1430730 Chip resistor 150 5 % 0.063 W 0402
R630 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R631 1430700 Chip resistor 10 5 % 0.063 W 0402
R632 1430848 Chip resistor 12 k 1 % 0.063 W 0402
R634 1430848 Chip resistor 12 k 1 % 0.063 W 0402
R635 1430851 Chip resistor 15 k 2 % 0.063 W 0402
R636 1430848 Chip resistor 12 k 1 % 0.063 W 0402
R638 1430848 Chip resistor 12 k 1 % 0.063 W 0402
R640 1430734 Chip resistor 220 5 % 0.063 W 0402
R641 1820031 NTC resistor 330 10 % 0.12 W 0805
R660 1430726 Chip resistor 100 5 % 0.063 W 0402
R662 1430714 Chip resistor 33 5 % 0.063 W 0402
R664 1430764 Chip resistor 3.3 k 5 % 0.063 W 0402
System Module
Issue 04/99
Page 3 – 75
NSE–1
PAMS
System Module
R666 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402
R668 1430732 Chip resistor 180 5 % 0.063 W 0402
R670 1430726 Chip resistor 100 5 % 0.063 W 0402
R706 1430812 Chip resistor 220 k 5 % 0.063 W 0402
R708 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R710 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
C100 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C101 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C102 2320538 Ceramic cap. 12 p 5 % 50 V 0402
C103 2604127 Tantalum cap. 1.0 u 20 % 35 V 3.5x2.8x1.9
C104 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C105 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C106 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C107 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C108 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C109 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C110 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C112 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C113 2320508 Ceramic cap. 1.0 p 0.25 % 50 V 0402
C114 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C115 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C116 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C117 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C118 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C119 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C120 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C121 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C122 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C127 2310784 Ceramic cap. 100 n 10 % 25 V 0805
C128 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C129 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C130 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C131 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C132 2312403 Ceramic cap. 2.2 u 10 % 10 V 1206
C133 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C140 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C142 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C143 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C146 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C160 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C161 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C201 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C202 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C203 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C204 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C205 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C206 2320620 Ceramic cap. 10 n 5 % 16 V 0402
Technical Documentation
Page 3 – 76
Issue 04/99
PAMS
NSE–1
Technical Documentation
C207 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C208 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C209 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C211 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C212 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C213 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C221 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C231 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C247 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C248 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C249 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C251 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C252 2312296 Ceramic cap. Y5 V 1210
C253 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C254 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C255 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C256 2312296 Ceramic cap. Y5 V 1210
C257 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C258 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C260 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C261 2310784 Ceramic cap. 100 n 10 % 25 V 0805
C262 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C263 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C266 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C268 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C269 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C271 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C272 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C301 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C302 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C303 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C304 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C305 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C306 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C307 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C308 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C309 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C310 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C311 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C312 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C313 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C500 2320530 Ceramic cap. 5.6 p 0.25 % 50 V 0402
C501 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C502 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C504 2320534 Ceramic cap. 8.2 p 0.25 % 50 V 0402
C505 2320550 Ceramic cap. 39 p 5 % 50 V 0402
C506 2320544 Ceramic cap. 22 p 5 % 50 V 0402
System Module
Issue 04/99
Page 3 – 77
NSE–1
PAMS
System Module
C507 2320550 Ceramic cap. 39 p 5 % 50 V 0402
C511 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C512 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C513 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C514 2320540 Ceramic cap. 15 p 5 % 50 V 0402
C515 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C516 2320530 Ceramic cap. 5.6 p 0.25 % 50 V 0402
C518 2320532 Ceramic cap. 6.8 p 0.25 % 50 V 0402
C520 2320602 Ceramic cap. 4.7 p 0.25 % 50 V 0402
C530 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C531 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C532 2320554 Ceramic cap. 56 p 5 % 50 V 0402
C535 2310181 Ceramic cap. 1.5 n 5 % 50 V 1206
C540 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C550 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C553 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C554 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C555 2320618 Ceramic cap. 4.7 n 5 % 25 V 0402
C559 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C562 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C563 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C564 2320530 Ceramic cap. 5.6 p 0.25 % 50 V 0402
C565 2320532 Ceramic cap. 6.8 p 0.25 % 50 V 0402
C566 2320538 Ceramic cap. 12 p 5 % 50 V 0402
C567 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C568 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C570 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C571 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C572 2320530 Ceramic cap. 5.6 p 0.25 % 50 V 0402
C574 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C575 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C576 2310784 Ceramic cap. 100 n 10 % 25 V 0805
C582 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C583 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C585 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C586 2320540 Ceramic cap. 15 p 5 % 50 V 0402
C587 2310248 Ceramic cap. 4.7 n 5 % 50 V 1206
C588 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C590 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C592 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C600 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C601 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C602 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C603 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C604 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C610 2610013 Tantalum cap. 220 u 10 % 10 V 7.3x4.3x4.1
C611 2610013 Tantalum cap. 220 u 10 % 10 V 7.3x4.3x4.1
Technical Documentation
Page 3 – 78
Issue 04/99
PAMS
NSE–1
Technical Documentation
C612 2610013 Tantalum cap. 220 u 10 % 10 V 7.3x4.3x4.1
C613 2320538 Ceramic cap. 12 p 5 % 50 V 0402
C614 2320526 Ceramic cap. 3.9 p 0.25 % 50 V 0402
C621 2320534 Ceramic cap. 8.2 p 0.25 % 50 V 0402
C622 2320514 Ceramic cap. 1.2 p 0.25 % 50 V 0402
C623 2320534 Ceramic cap. 8.2 p 0.25 % 50 V 0402
C624 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C627 2320738 Ceramic cap. 470 p 10 % 50 V 0402
C630 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C632 2320530 Ceramic cap. 5.6 p 0.25 % 50 V 0402
C633 2320532 Ceramic cap. 6.8 p 0.25 % 50 V 0402
C635 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C636 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C638 2320552 Ceramic cap. 47 p 5 % 50 V 0402
C639 2320592 Ceramic cap. 2.2 n 5 % 50 V 0402
C640 2310784 Ceramic cap. 100 n 10 % 25 V 0805
C641 2310784 Ceramic cap. 100 n 10 % 25 V 0805
C642 2320552 Ceramic cap. 47 p 5 % 50 V 0402
C643 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C644 2320540 Ceramic cap. 15 p 5 % 50 V 0402
C649 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C652 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C653 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C655 2320530 Ceramic cap. 5.6 p 0.25 % 50 V 0402
C656 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C660 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C662 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C695 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C700 2320524 Ceramic cap. 3.3 p 0.25 % 50 V 0402
L103 3203701 Ferrite bead 33r/100mhz 0805 0805
L104 3203701 Ferrite bead 33r/100mhz 0805 0805
L105 3203701 Ferrite bead 33r/100mhz 0805 0805
L106 3640035 Filt z>450r/100m 0r7max 0.2a 0603 0603
L107 3640035 Filt z>450r/100m 0r7max 0.2a 0603 0603
L108 3640035 Filt z>450r/100m 0r7max 0.2a 0603 0603
L500 3643039 Chip coil 220 n 5 % Q=35/100 MHz 0805
L501 3643039 Chip coil 220 n 5 % Q=35/100 MHz 0805
L550 3640069 Filt 47pf 25v 0r01 6a 1206
L552 3645157 Chip coil 100 n 10 % Q=12/100 MHz 0603
L554 3645157 Chip coil 100 n 10 % Q=12/100 MHz 0603
L580 3645161 Chip coil 150 n 5 % Q=14/100 MHz 0603
L581 3643025 Chip coil 56 n 5 % Q=40/200 MHz 0805
L600 3641206 Chip coil 10% Q=25/7.96 MHz 1008
L621 3641300 Chip coil 330 n 5 % Q=30/25 MHz 1008
L623 3641626 Chip coil 220 n 2 % Q=30/100 MHz 0805
L624 3641626 Chip coil 220 n 2 % Q=30/100 MHz 0805
B100 4510159 Crystal 32.768 k +–20PPM
System Module
Issue 04/99
Page 3 – 79
NSE–1
PAMS
System Module
G530 4350099 Vco 1006–1031mhz 2.8v 10ma gsm
G600 4510153 VCTCXO 13.0 M+–5PPM 2.8V GSM
F101 5119019 SM, fuse f 1.5a 32v 0603
Z500 4511017 Saw filter 947.5+–12.5 M /3.8DB 4X4
Z505 4511015 Saw filter 902.5+–12.5 M /3.8DB 4X4
Z550 4512005 Dupl 890–915/935–960mhz 20x14 20x14
Z620 4510009 Cer.filt 13+–0.09mhz 7.2x3.2 7.2x3.2
Z621 4510137 Saw filter 71+–0.09 M 14.2x8.4
V100 1825005 Chip varistor vwm14v vc30v 0805 0805
V101 4113651 Trans. supr. QUAD 6 V SOT23–5
V102 4113651 Trans. supr. QUAD 6 V SOT23–5
V103 4113601 Emi filter emif01–5250sc5 sot23–5 SOT23–5
V104 4113651 Trans. supr. QUAD 6 V SOT23–5
V116 4110067 Schottky diode MBR0520L 20 V 0.5 A SOD123
V250 4210100 Transistor BC848W npn 30 V SOT323
V550 4110014 Sch. diode x 2 BAS70–07 70 V 15 mA SOT143
V580 4110062 Cap. diode BB535 30 V 2.1/18.7PFSOD323
V581 4210066 Transistor BFR93AW npn 12 V 35 mA SOT323
V640 4210066 Transistor BFR93AW npn 12 V 35 mA SOT323
V705 4210100 Transistor BC848W npn 30 V SOT323
D200 4370279 Mad2 rom3 f711604 c12 tqfp176 TQFP176
D211 4340261 IC, flash mem. TSO48
D220 4340273 IC, SRAM STSOP32
D240 4343280 IC, EEPROM 2kx8 bit SO8S
N100 4370047 Ccont 2f dct3 bb asic tqfp64 TQFP64
N101 4370165 Uba2006t chaps charg.control so16 SO16
N201 4340423 IC, regulator TK11230M 3.0 V SOT23L
N250 4370317 Cobba_gj b07 bb asic dct3 tqfp64 TQFP64
N500 4370253 Crfu1a rx+tx uhf gsm v5 sot401–1 SOT401–1
N550 4370319 Rf9106 pw amp 880–915mhz psop2–16 PSOP2–16
N620 4370273 Plussa txmod+rxif+2pll tqfp64 TQFP64
X100 5469061 SM, system conn 6af+3dc+mic+jack
X101 5469069 SM, batt conn 2pol spr p3.5 100v 100V2A
X102 5469069 SM, batt conn 2pol spr p3.5 100v 100V2A
X300 5460021 SM, conn 2x14m spring p1.0 pcb/p PCB/PCB
X302 5400085 Sim card reader 2x3pol p2.54 sm SM
X540 5429007 SM, coax conn m sw 50r 0.4–2ghz
A500 9517012 SM, d rf shield dmc00422 hd940 u UP8
A510 9517013 SM, d rf shield pa–can dmc00455
9380753 Bar code label dmd03311 27x6.5 27x6.5
9850051 PCB UP8 123.25X41.0X1.0 M6 4/PA
Technical Documentation
Page 3 – 80
Issue 04/99
PAMS
NSE–1
Technical Documentation
System Module
Parts list of UP8R (EDMS Issue 4.5) Layout 16 Code: 0201 190
ITEM CODE DESCRIPTION VALUE TYPE
R100 1430826 Chip resistor 680 k 5 % 0.063 W 0402
R102 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R103 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402
R104 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R109 1620017 Res network 0w06 2x100r j 0404 0404
R113 1430726 Chip resistor 100 5 % 0.063 W 0402
R116 1430788 Chip resistor 22 k 5 % 0.063 W 0402
R118 1430778 Chip resistor 10 k 5 % 0.063 W 0402
R120 1620025 Res network 0w06 2x100k j 0404 0404
R122 1620019 Res network 0w06 2x10k j 0404 0404
R124 1620027 Res network 0w06 2x47r j 0404 0404
R127 1620031 Res network 0w06 2x1k0 j 0404 0404
R128 1430718 Chip resistor 47 5 % 0.063 W 0402
R131 1422881 Chip resistor 0.22 5 % 1 W 1218
R136 1430804 Chip resistor 100 k 5 % 0.063 W 0402
R140 1430690 Chip jumper 0402
R142 1430690 Chip jumper 0402
R143 1430834 Chip resistor 3.3 M 5 % 0.063 W 0402
R144 1414364 Chip resistor 4.7 M 5 % 0.1 W 0805
R152 1430690 Chip jumper 0402
R154 1430122 Chip resistor 4.7 M 5 % 0.063 W 0603
R201 1430812 Chip resistor 220 k 5 % 0.063 W 0402
R202 1430804 Chip resistor 100 k 5 % 0.063 W 0402
R203 1620029 Res network 0w06 2x4k7 j 0404 0404
R211 1430804 Chip resistor 100 k 5 % 0.063 W 0402
R213 1430690 Chip jumper 0402
R215 1620023 Res network 0w06 2x47k j 0404 0404
R252 1430740 Chip resistor 330 5 % 0.063 W 0402
R254 1620027 Res network 0w06 2x47r j 0404 0404
R256 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R257 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R259 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R260 1430788 Chip resistor 22 k 5 % 0.063 W 0402
R261 1430788 Chip resistor 22 k 5 % 0.063 W 0402
R263 1430778 Chip resistor 10 k 5 % 0.063 W 0402
R265 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R267 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402
R268 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402
R270 1430804 Chip resistor 100 k 5 % 0.063 W 0402
R271 1430804 Chip resistor 100 k 5 % 0.063 W 0402
R301 1620031 Res network 0w06 2x1k0 j 0404 0404
R303 1620031 Res network 0w06 2x1k0 j 0404 0404
R305 1620031 Res network 0w06 2x1k0 j 0404 0404
Issue 04/99
Page 3 – 81
NSE–1
PAMS
System Module
R307 1620031 Res network 0w06 2x1k0 j 0404 0404
R308 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402
R309 1620031 Res network 0w06 2x1k0 j 0404 0404
R500 1430700 Chip resistor 10 5 % 0.063 W 0402
R501 1430700 Chip resistor 10 5 % 0.063 W 0402
R502 1430764 Chip resistor 3.3 k 5 % 0.063 W 0402
R504 1620019 Res network 0w06 2x10k j 0404 0404
R507 1430740 Chip resistor 330 5 % 0.063 W 0402
R530 1430700 Chip resistor 10 5 % 0.063 W 0402
R531 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R533 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R550 1430752 Chip resistor 820 5 % 0.063 W 0402
R551 1430740 Chip resistor 330 5 % 0.063 W 0402
R552 1430740 Chip resistor 330 5 % 0.063 W 0402
R553 1430774 Chip resistor 6.8 k 5 % 0.063 W 0402
R554 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402
R555 1430726 Chip resistor 100 5 % 0.063 W 0402
R580 1430706 Chip resistor 15 5 % 0.063 W 0402
R581 1430832 Chip resistor 2.7 k 5 % 0.063 W 0402
R582 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R584 1430780 Chip resistor 12 k 5 % 0.063 W 0402
R585 1430774 Chip resistor 6.8 k 5 % 0.063 W 0402
R586 1430738 Chip resistor 270 5 % 0.063 W 0402
R588 1430744 Chip resistor 470 5 % 0.063 W 0402
R589 1430710 Chip resistor 22 5 % 0.063 W 0402
R600 1430788 Chip resistor 22 k 5 % 0.063 W 0402
R620 1620029 Res network 0w06 2x4k7 j 0404 0404
R621 1430744 Chip resistor 470 5 % 0.063 W 0402
R622 1430758 Chip resistor 1.5 k 5 % 0.063 W 0402
R623 1430714 Chip resistor 33 5 % 0.063 W 0402
R624 1430714 Chip resistor 33 5 % 0.063 W 0402
R625 1430714 Chip resistor 33 5 % 0.063 W 0402
R626 1430740 Chip resistor 330 5 % 0.063 W 0402
R627 1430776 Chip resistor 8.2 k 5 % 0.063 W 0402
R628 1430744 Chip resistor 470 5 % 0.063 W 0402
R629 1430730 Chip resistor 150 5 % 0.063 W 0402
R630 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R631 1430700 Chip resistor 10 5 % 0.063 W 0402
R632 1430848 Chip resistor 12 k 1 % 0.063 W 0402
R634 1430848 Chip resistor 12 k 1 % 0.063 W 0402
R635 1430851 Chip resistor 15 k 2 % 0.063 W 0402
R636 1430848 Chip resistor 12 k 1 % 0.063 W 0402
R638 1430848 Chip resistor 12 k 1 % 0.063 W 0402
R640 1430734 Chip resistor 220 5 % 0.063 W 0402
R641 1820031 NTC resistor 330 10 % 0.12 W 0805
R660 1430726 Chip resistor 100 5 % 0.063 W 0402
R662 1430714 Chip resistor 33 5 % 0.063 W 0402
Technical Documentation
Page 3 – 82
Issue 04/99
PAMS
NSE–1
Technical Documentation
R664 1430764 Chip resistor 3.3 k 5 % 0.063 W 0402
R666 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402
R668 1430732 Chip resistor 180 5 % 0.063 W 0402
R670 1430726 Chip resistor 100 5 % 0.063 W 0402
R706 1430812 Chip resistor 220 k 5 % 0.063 W 0402
R708 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R710 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R712 1430714 Chip resistor 33 5 % 0.063 W 0402
C100 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C101 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C102 2320538 Ceramic cap. 12 p 5 % 50 V 0402
C103 2604127 Tantalum cap. 1.0 u 20 % 35 V 3.5x2.8x1.9
C104 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C105 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C106 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C107 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C108 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C109 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C110 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C112 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C113 2320508 Ceramic cap. 1.0 p 0.25 % 50 V 0402
C114 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C115 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C117 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C118 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C119 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C120 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C121 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C122 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C127 2310784 Ceramic cap. 100 n 10 % 25 V 0805
C128 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C129 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C130 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C131 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C132 2312403 Ceramic cap. 2.2 u 10 % 10 V 1206
C133 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C140 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C142 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C143 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C146 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C160 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C161 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C201 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C202 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C203 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C204 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C205 2320620 Ceramic cap. 10 n 5 % 16 V 0402
System Module
Issue 04/99
Page 3 – 83
NSE–1
PAMS
System Module
C206 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C207 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C208 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C209 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C211 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C212 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C213 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C221 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C231 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C247 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C248 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C249 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C251 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C252 2312296 Ceramic cap. Y5 V 1210
C253 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C254 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C255 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C256 2312296 Ceramic cap. Y5 V 1210
C257 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C258 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C260 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C261 2310784 Ceramic cap. 100 n 10 % 25 V 0805
C262 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C263 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C266 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C268 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C269 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C271 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C272 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C301 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C302 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C303 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C304 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C305 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C306 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C307 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C308 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C309 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C310 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C311 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C312 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C313 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C500 2320530 Ceramic cap. 5.6 p 0.25 % 50 V 0402
C501 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C502 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C504 2320534 Ceramic cap. 8.2 p 0.25 % 50 V 0402
C505 2320550 Ceramic cap. 39 p 5 % 50 V 0402
Technical Documentation
Page 3 – 84
Issue 04/99
PAMS
NSE–1
Technical Documentation
C506 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C507 2320550 Ceramic cap. 39 p 5 % 50 V 0402
C511 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C512 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C513 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C514 2320540 Ceramic cap. 15 p 5 % 50 V 0402
C515 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C516 2320530 Ceramic cap. 5.6 p 0.25 % 50 V 0402
C518 2320532 Ceramic cap. 6.8 p 0.25 % 50 V 0402
C520 2320602 Ceramic cap. 4.7 p 0.25 % 50 V 0402
C530 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C531 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C532 2320554 Ceramic cap. 56 p 5 % 50 V 0402
C535 2310181 Ceramic cap. 1.5 n 5 % 50 V 1206
C540 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C550 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C553 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C554 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C555 2320618 Ceramic cap. 4.7 n 5 % 25 V 0402
C559 2320522 Ceramic cap. 2.7 p 0.25 % 50 V 0402
C562 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C563 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C564 2320530 Ceramic cap. 5.6 p 0.25 % 50 V 0402
C565 2320532 Ceramic cap. 6.8 p 0.25 % 50 V 0402
C566 2320538 Ceramic cap. 12 p 5 % 50 V 0402
C567 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C568 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C570 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C571 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C572 2320530 Ceramic cap. 5.6 p 0.25 % 50 V 0402
C574 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C575 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C576 2310784 Ceramic cap. 100 n 10 % 25 V 0805
C582 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C583 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C585 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C586 2320540 Ceramic cap. 15 p 5 % 50 V 0402
C587 2310248 Ceramic cap. 4.7 n 5 % 50 V 1206
C588 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C590 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C592 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C600 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C601 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C602 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C603 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C604 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C610 2610013 Tantalum cap. 220 u 10 % 10 V 7.3x4.3x4.1
System Module
Issue 04/99
Page 3 – 85
NSE–1
PAMS
System Module
C611 2610013 Tantalum cap. 220 u 10 % 10 V 7.3x4.3x4.1
C612 2610013 Tantalum cap. 220 u 10 % 10 V 7.3x4.3x4.1
C613 2320538 Ceramic cap. 12 p 5 % 50 V 0402
C614 2320526 Ceramic cap. 3.9 p 0.25 % 50 V 0402
C621 2320534 Ceramic cap. 8.2 p 0.25 % 50 V 0402
C622 2320514 Ceramic cap. 1.2 p 0.25 % 50 V 0402
C623 2320534 Ceramic cap. 8.2 p 0.25 % 50 V 0402
C624 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C627 2320738 Ceramic cap. 470 p 10 % 50 V 0402
C630 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C632 2320530 Ceramic cap. 5.6 p 0.25 % 50 V 0402
C633 2320532 Ceramic cap. 6.8 p 0.25 % 50 V 0402
C635 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C636 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C638 2320552 Ceramic cap. 47 p 5 % 50 V 0402
C639 2320592 Ceramic cap. 2.2 n 5 % 50 V 0402
C640 2310784 Ceramic cap. 100 n 10 % 25 V 0805
C641 2310784 Ceramic cap. 100 n 10 % 25 V 0805
C642 2320552 Ceramic cap. 47 p 5 % 50 V 0402
C643 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C644 2320540 Ceramic cap. 15 p 5 % 50 V 0402
C649 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C652 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C653 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C655 2320530 Ceramic cap. 5.6 p 0.25 % 50 V 0402
C656 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C660 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C662 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C695 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C700 2320524 Ceramic cap. 3.3 p 0.25 % 50 V 0402
L103 3203701 Ferrite bead 33r/100mhz 0805 0805
L104 3203701 Ferrite bead 33r/100mhz 0805 0805
L105 3203701 Ferrite bead 33r/100mhz 0805 0805
L106 3640035 Filt z>450r/100m 0r7max 0.2a 0603 0603
L107 3640035 Filt z>450r/100m 0r7max 0.2a 0603 0603
L108 3640035 Filt z>450r/100m 0r7max 0.2a 0603 0603
L500 3643039 Chip coil 220 n 5 % Q=35/100 MHz 0805
L501 3643039 Chip coil 220 n 5 % Q=35/100 MHz 0805
L550 3640069 Filt 47pf 25v 0r01 6a 1206
L552 3640035 Filt z>450r/100m 0r7max 0.2a 0603 0603
L554 3645157 Chip coil 100 n 10 % Q=12/100 MHz 0603
L580 3645161 Chip coil 150 n 5 % Q=14/100 MHz 0603
L581 3643025 Chip coil 56 n 5 % Q=40/200 MHz 0805
L600 3641206 Chip coil 10 % Q=25/7.96 MHz
1008
L621 3641300 Chip coil 330 n 5 % Q=30/25 MHz 1008
L623 3641626 Chip coil 220 n 2 % Q=50/250 MHz 0805
Technical Documentation
Page 3 – 86
Issue 04/99
PAMS
NSE–1
Technical Documentation
L624 3641626 Chip coil 220 n 2 % Q=50/250 MHz 0805
B100 4510159 Crystal 32.768 k +–20PPM
G530 4350099 Vco 1006–1031mhz 2.8v 10ma gsm
G600 4510153 VCTCXO 13.0 M +–5PPM 2.8V GSM
F101 5119019 SM, fuse f 1.5a 32v 0603
Z500 4511017 Saw filter 947.5+–12.5 M /3.8DB 4X4
Z505 4511015 Saw filter 902.5+–12.5 M /3.8DB 4X4
Z550 4512005 Dupl 890–915/935–960mhz 20x14 20x14
Z620 4510009 Cer.filt 13+–0.09mhz 7.2x3.2 7.2x3.2
Z621 4510137 Saw filter 71+–0.09 M 14.2x8.4
V100 1825005 Chip varistor vwm14v vc30v 0805 0805
V101 4113651 Trans. supr. QUAD 6 V SOT23–5
V102 4113651 Trans. supr. QUAD 6 V SOT23–5
V103 4113601 Emi filter emif01–5250sc5 sot23–5 SOT23–5
V104 4113651 Trans. supr. QUAD 6 V SOT23–5
V116 4110067 Schottky diode MBR0520L 20 V 0.5 A SOD123
V250 4210100 Transistor BC848W npn 30 V SOT323
V550 4110014 Sch. diode x 2 BAS70–07 70 V 15 mA SOT143
V580 4110062 Cap. diode BB535 30 V 2.1/18.7PFSOD323
V581 4210066 Transistor BFR93AW npn 12 V 35 mA SOT323
V640 4210066 Transistor BFR93AW npn 12 V 35 mA SOT323
V705 4210100 Transistor BC848W npn 30 V SOT323
D200 4370279 Mad2 rom3 f711604 c12 tqfp176 TQFP176
D211 4340261 IC, flash mem. TSO48
D220 4340273 IC, SRAM STSOP32
D240 4343280 IC, EEPROM 2kx8 bit SO8S
N100 4370047 Ccont 2f dct3 bb asic tqfp64 TQFP64
N101 4370165 Chaps charger control so16 SO16
N201 4340413 IC, regulator TK11230BMC 3.0 V SOT23L
N250 4370317 Cobba_gj b07 bb asic dct3 tqfp64 TQFP64
N500 4370253 Crfu1a rx+tx uhf gsm v5 sot401–1 SOT401–1
N550 4370319 Rf9106 pw amp 880–915mhz psop2–16 PSOP2–16
N620 4370273 Plussa txmod+rxif+2pll tqfp64 TQFP64
X100 5469061 SM, system conn 6af+3dc+mic+jack
X101 5469069 SM, batt conn 2pol spr p3.5 100v 100V2A
X102 5469069 SM, batt conn 2pol spr p3.5 100v 100V2A
X300 5460021 SM, conn 2x14m spring p1.0 pcb/p PCB/PCB
X302 5400085 Sim card reader 2x3pol p2.54 sm SM
X540 5429007 SM, coax conn m sw 50r 0.4–2ghz
A500 9517012 SM, d rf shield dmc00422 hd940 u UP8
A510 9517013 SM, d rf shield pa–can dmc00455
9380753 Bar code label dmd03311 27x6.5 27x6.5
9850051 PCB UP8 123.25X41.0X1.0 M6 4/PA
System Module
Issue 04/99
Page 3 – 87
NSE–1
PAMS
System Module
Technical Documentation
Parts list of UP8R (EDMS Issue 5.6) Layout 17 Code: 0200952
ITEM CODE DESCRIPTION VALUE TYPE
R100 1430826 Chip resistor 680 k 5 % 0.063 W 0402
R102 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R103 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402
R104 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R109 1620017 Res network 0w06 2x100r j 0404 0404
R113 1430726 Chip resistor 100 5 % 0.063 W 0402
R116 1430788 Chip resistor 22 k 5 % 0.063 W 0402
R118 1430778 Chip resistor 10 k 5 % 0.063 W 0402
R120 1620025 Res network 0w06 2x100k j 0404 0404
R122 1620019 Res network 0w06 2x10k j 0404 0404
R124 1620027 Res network 0w06 2x47r j 0404 0404
R127 1620031 Res network 0w06 2x1k0 j 0404 0404
R128 1430718 Chip resistor 47 5 % 0.063 W 0402
R131 1422881 Chip resistor 0.22 5 % 1 W 1218
R136 1430804 Chip resistor 100 k 5 % 0.063 W 0402
R140 1430690 Chip jumper 0402
R142 1430690 Chip jumper 0402
R143 1430834 Chip resistor 3.3 M 5 % 0.063 W 0402
R152 1430690 Chip jumper 0402
R154 1430122 Chip resistor 4.7 M 5 % 0.063 W 0603
R201 1430812 Chip resistor 220 k 5 % 0.063 W 0402
R202 1430804 Chip resistor 100 k 5 % 0.063 W 0402
R203 1620029 Res network 0w06 2x4k7 j 0404 0404
R211 1430804 Chip resistor 100 k 5 % 0.063 W 0402
R213 1430690 Chip jumper 0402
R215 1620023 Res network 0w06 2x47k j 0404 0404
R252 1430740 Chip resistor 330 5 % 0.063 W 0402
R254 1620027 Res network 0w06 2x47r j 0404 0404
R256 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R257 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R259 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R260 1430788 Chip resistor 22 k 5 % 0.063 W 0402
R261 1430788 Chip resistor 22 k 5 % 0.063 W 0402
R263 1430778 Chip resistor 10 k 5 % 0.063 W 0402
R265 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R267 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402
R268 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402
R270 1430804 Chip resistor 100 k 5 % 0.063 W 0402
R271 1430804 Chip resistor 100 k 5 % 0.063 W 0402
R301 1620031 Res network 0w06 2x1k0 j 0404 0404
R303 1620031 Res network 0w06 2x1k0 j 0404 0404
R305 1620031 Res network 0w06 2x1k0 j 0404 0404
R307 1620031 Res network 0w06 2x1k0 j 0404 0404
Page 3 – 88
Issue 04/99
PAMS
NSE–1
Technical Documentation
R308 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402
R309 1620031 Res network 0w06 2x1k0 j 0404 0404
R500 1430700 Chip resistor 10 5 % 0.063 W 0402
R501 1430700 Chip resistor 10 5 % 0.063 W 0402
R502 1430764 Chip resistor 3.3 k 5 % 0.063 W 0402
R504 1620019 Res network 0w06 2x10k j 0404 0404
R507 1430740 Chip resistor 330 5 % 0.063 W 0402
R530 1430700 Chip resistor 10 5 % 0.063 W 0402
R531 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R533 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R550 1430752 Chip resistor 820 5 % 0.063 W 0402
R551 1430740 Chip resistor 330 5 % 0.063 W 0402
R552 1430740 Chip resistor 330 5 % 0.063 W 0402
R553 1430774 Chip resistor 6.8 k 5 % 0.063 W 0402
R554 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402
R555 1430726 Chip resistor 100 5 % 0.063 W 0402
R556 1412286 Chip jumper 0805
R570 1430726 Chip resistor 100 5 % 0.063 W 0402
R572 1820031 NTC resistor 330 10 % 0.12 W 0805
R574 1430744 Chip resistor 470 5 % 0.063 W 0402
R580 1430706 Chip resistor 15 5 % 0.063 W 0402
R581 1430832 Chip resistor 2.7 k 5 % 0.063 W 0402
R582 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R584 1430780 Chip resistor 12 k 5 % 0.063 W 0402
R585 1430774 Chip resistor 6.8 k 5 % 0.063 W 0402
R586 1430738 Chip resistor 270 5 % 0.063 W 0402
R588 1430744 Chip resistor 470 5 % 0.063 W 0402
R589 1430710 Chip resistor 22 5 % 0.063 W 0402
R600 1430788 Chip resistor 22 k 5 % 0.063 W 0402
R620 1620029 Res network 0w06 2x4k7 j 0404 0404
R621 1430744 Chip resistor 470 5 % 0.063 W 0402
R622 1430758 Chip resistor 1.5 k 5 % 0.063 W 0402
R623 1430714 Chip resistor 33 5 % 0.063 W 0402
R625 1430714 Chip resistor 33 5 % 0.063 W 0402
R626 1430740 Chip resistor 330 5 % 0.063 W 0402
R627 1430776 Chip resistor 8.2 k 5 % 0.063 W 0402
R628 1430744 Chip resistor 470 5 % 0.063 W 0402
R629 1430730 Chip resistor 150 5 % 0.063 W 0402
R630 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R631 1430700 Chip resistor 10 5 % 0.063 W 0402
R632 1430848 Chip resistor 12 k 1 % 0.063 W 0402
R634 1430848 Chip resistor 12 k 1 % 0.063 W 0402
R635 1430851 Chip resistor 15 k 2 % 0.063 W 0402
R636 1430848 Chip resistor 12 k 1 % 0.063 W 0402
R638 1430848 Chip resistor 12 k 1 % 0.063 W 0402
R640 1430734 Chip resistor 220 5 % 0.063 W 0402
R641 1820031 NTC resistor 330 10 % 0.12 W 0805
System Module
Issue 04/99
Page 3 – 89
NSE–1
PAMS
System Module
R660 1430726 Chip resistor 100 5 % 0.063 W 0402
R662 1430714 Chip resistor 33 5 % 0.063 W 0402
R664 1430764 Chip resistor 3.3 k 5 % 0.063 W 0402
R666 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402
R668 1430732 Chip resistor 180 5 % 0.063 W 0402
R670 1430726 Chip resistor 100 5 % 0.063 W 0402
R672 1430706 Chip resistor 15 5 % 0.063 W 0402
R706 1430812 Chip resistor 220 k 5 % 0.063 W 0402
R708 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R710 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
C100 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C101 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C102 2320538 Ceramic cap. 12 p 5 % 50 V 0402
C103 2604127 Tantalum cap. 1.0 u 20 % 35 V 3.5x2.8x1.9
C104 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C105 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C106 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C107 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C108 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C109 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C110 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C112 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C113 2320508 Ceramic cap. 1.0 p 0.25 % 50 V 0402
C114 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C115 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C116 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C117 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C118 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C119 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C120 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C121 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C122 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C127 2310784 Ceramic cap. 100 n 10 % 25 V 0805
C128 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C129 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C130 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C131 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C132 2312403 Ceramic cap. 2.2 u 10 % 10 V 1206
C133 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C140 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C142 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C143 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C146 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C160 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C161 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C201 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C202 2320620 Ceramic cap. 10 n 5 % 16 V 0402
Technical Documentation
Page 3 – 90
Issue 04/99
PAMS
NSE–1
Technical Documentation
C203 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C204 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C205 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C206 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C207 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C208 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C209 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C211 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C212 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C213 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C221 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C231 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C247 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C248 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C249 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C251 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C252 2312296 Ceramic cap. Y5 V 1210
C253 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C254 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C255 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C256 2312296 Ceramic cap. Y5 V 1210
C257 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C258 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C260 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C261 2310784 Ceramic cap. 100 n 10 % 25 V 0805
C262 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C263 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C266 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C268 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C269 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C271 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C272 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C301 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C302 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C303 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C304 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C305 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C306 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C307 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C308 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C309 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C310 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C311 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C312 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C313 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C500 2320530 Ceramic cap. 5.6 p 0.25 % 50 V 0402
C501 2320546 Ceramic cap. 27 p 5 % 50 V 0402
System Module
Issue 04/99
Page 3 – 91
NSE–1
PAMS
System Module
C502 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C504 2320534 Ceramic cap. 8.2 p 0.25 % 50 V 0402
C505 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C506 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C507 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C511 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C512 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C513 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C514 2320540 Ceramic cap. 15 p 5 % 50 V 0402
C515 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C516 2320530 Ceramic cap. 5.6 p 0.25 % 50 V 0402
C518 2320532 Ceramic cap. 6.8 p 0.25 % 50 V 0402
C520 2320602 Ceramic cap. 4.7 p 0.25 % 50 V 0402
C530 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C531 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C532 2320554 Ceramic cap. 56 p 5 % 50 V 0402
C535 2310181 Ceramic cap. 1.5 n 5 % 50 V 1206
C540 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C541 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C550 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C553 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C554 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C560 2320516 Ceramic cap. 1.5 p 0.25 % 50 V 0402
C570 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C572 2320534 Ceramic cap. 8.2 p 0.25 % 50 V 0402
C574 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C575 2320522 Ceramic cap. 2.7 p 0.25 % 50 V 0402
C582 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C583 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C585 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C586 2320540 Ceramic cap. 15 p 5 % 50 V 0402
C587 2310248 Ceramic cap. 4.7 n 5 % 50 V 1206
C588 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C590 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C592 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C600 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C601 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C602 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C603 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C604 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C610 2610013 Tantalum cap. 220 u 10 % 10 V 7.3x4.3x4.1
C611 2610013 Tantalum cap. 220 u 10 % 10 V 7.3x4.3x4.1
C612 2610013 Tantalum cap. 220 u 10 % 10 V 7.3x4.3x4.1
C613 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C614 2320524 Ceramic cap. 3.3 p 0.25 % 50 V 0402
C621 2320534 Ceramic cap. 8.2 p 0.25 % 50 V 0402
C622 2320522 Ceramic cap. 2.7 p 0.25 % 50 V 0402
Technical Documentation
Page 3 – 92
Issue 04/99
PAMS
NSE–1
Technical Documentation
C623 2320534 Ceramic cap. 8.2 p 0.25 % 50 V 0402
C627 2320738 Ceramic cap. 470 p 10 % 50 V 0402
C630 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C632 2320532 Ceramic cap. 6.8 p 0.25 % 50 V 0402
C633 2320532 Ceramic cap. 6.8 p 0.25 % 50 V 0402
C635 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C636 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C638 2320552 Ceramic cap. 47 p 5 % 50 V 0402
C639 2320592 Ceramic cap. 2.2 n 5 % 50 V 0402
C640 2310784 Ceramic cap. 100 n 10 % 25 V 0805
C641 2310784 Ceramic cap. 100 n 10 % 25 V 0805
C642 2320552 Ceramic cap. 47 p 5 % 50 V 0402
C643 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C644 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C649 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C652 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C653 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C655 2320530 Ceramic cap. 5.6 p 0.25 % 50 V 0402
C660 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C662 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C695 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C700 2320524 Ceramic cap. 3.3 p 0.25 % 50 V 0402
L103 3203701 Ferrite bead 33r/100mhz 0805 0805
L104 3203701 Ferrite bead 33r/100mhz 0805 0805
L105 3203701 Ferrite bead 33r/100mhz 0805 0805
L106 3640035 Filt z>450r/100m 0r7max 0.2a 0603 0603
L107 3640035 Filt z>450r/100m 0r7max 0.2a 0603 0603
L108 3640035 Filt z>450r/100m 0r7max 0.2a 0603 0603
L500 3643039 Chip coil 220 n 5 % Q=35/100 MHz 0805
L501 3643039 Chip coil 220 n 5 % Q=35/100 MHz 0805
L550 3640069 Filt 47pf 25v 0r01 6a 1206
L554 3646001 Chip coil 3 n Q=7/100M 0402
L580 3645161 Chip coil 150 n 5 % Q=14/100 MHz 0603
L581 3643025 Chip coil 56 n 5 % Q=40/200 MHz 0805
L600 3641206 Chip coil 10% Q=25/7.96 MHz 1008
L621 3641300 Chip coil 330 n 5 % Q=30/25 MHz 1008
L623 3641626 Chip coil 220 n 2 % Q=30/100 MHz 0805
L624 3641626 Chip coil 220 n 2 % Q=30/100 MHz 0805
B100 4510159 Crystal 32.768 k +–20PPM
G530 4350099 Vco 1006–1031mhz 2.8v 10ma gsm
G600 4510153 VCTCXO 13.0 M +–5PPM 2.8V GSM
F101 5119019 SM, fuse f 1.5a 32v 0603
Z500 4511017 Saw filter 947.5+–12.5 M /3.8DB 4X4
Z505 4511015 Saw filter 902.5+–12.5 M /3.8DB 4X4
Z550 4512005 Dupl 890–915/935–960mhz 20x14 20x14
Z620 4510009 Cer.filt 13+–0.09mhz 7.2x3.2 7.2x3.2
Z621 4511029 Saw filter 71+–0.09 M /1.5DB 14X8
System Module
Issue 04/99
Page 3 – 93
NSE–1
PAMS
System Module
V100 1825005 Chip varistor vwm14v vc30v 0805 0805
V101 4113651 Trans. supr. QUAD 6 V SOT23–5
V102 4113651 Trans. supr. QUAD 6 V SOT23–5
V103 4113601 Emi filter emif01–5250sc5 sot23–5 SOT23–5
V104 4113651 Trans. supr. QUAD 6 V SOT23–5
V116 4110067 Schottky diode MBR0520L 20 V 0.5 A SOD123
V250 4210100 Transistor BC848W npn 30 V SOT323
V550 4110014 Sch. diode x 2 BAS70–07 70 V 15 mA SOT143
V580 4110062 Cap. diode BB535 30 V 2.1/18.7PFSOD323
V581 4210066 Transistor BFR93AW npn 12 V 35 mA SOT323
V640 4210066 Transistor BFR93AW npn 12 V 35 mA SOT323
V705 4210100 Transistor BC848W npn 30 V SOT323
D200 4370279 Mad2 rom3 f711604 c12 tqfp176 TQFP176
D210 4340261 Te28f800 flashm 512kx16 120ns
D221 4340273 IC, SRAM STSOP32
D240 4343280 IC, EEPROM 2kx8 bit SO8S
N100 4370047 Ccont 2f dct3 bb asic tqfp64 TQFP64
N101 4370165 Uba2006t chaps charg.control so16 SO16
N201 4340423 IC, regulator TK11230M 3.0 V SOT23L
N250 4370317 Cobba_gj b07 bb asic dct3 tqfp64 TQFP64
N500 4370253 Crfu1a rx+tx uhf gsm v5 sot401–1 SOT401–1
N550 435X049 Use code 4350139
N620 4370273 Plussa txmod+rxif+2pll tqfp64 TQFP64
X100 5469061 SM, system conn 6af+3dc+mic+jack
X101 5469069 SM, batt conn 2pol spr p3.5 100v 100V2A
X102 5469069 SM, batt conn 2pol spr p3.5 100v 100V2A
X300 5460021 SM, conn 2x14m spring p1.0 pcb/p PCB/PCB
X302 5400085 Sim card reader 2x3pol p2.54 sm SM
X540 5429007 SM, coax conn m sw 50r 0.4–2ghz
A500 9517012 SM, d rf shield dmc00422 hd940 u UP8
9380753 Bar code label dmd03311 27x6.5 27x6.5
9854231 PCB UP8S 123.3X41.0X0.9 M6 4/PA
Technical Documentation
Page 3 – 94
Issue 04/99
PAMS
NSE–1
Technical Documentation
System Module
Parts list of UP8S (EDMS Issue 7.1) Layout 09 Code: 0200952
ITEM CODE DESCRIPTION VALUE TYPE
R100 1430826 Chip resistor 680 k 5 % 0.063 W 0402
R102 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R103 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402
R104 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R109 1620017 Res network 0w06 2x100r j 0404 0404
R113 1430726 Chip resistor 100 5 % 0.063 W 0402
R116 1430788 Chip resistor 22 k 5 % 0.063 W 0402
R118 1430778 Chip resistor 10 k 5 % 0.063 W 0402
R120 1620025 Res network 0w06 2x100k j 0404 0404
R122 1620019 Res network 0w06 2x10k j 0404 0404
R124 1620027 Res network 0w06 2x47r j 0404 0404
R127 1620031 Res network 0w06 2x1k0 j 0404 0404
R128 1430718 Chip resistor 47 5 % 0.063 W 0402
R131 1422881 Chip resistor 0.22 5 % 1 W 1218
R136 1430804 Chip resistor 100 k 5 % 0.063 W 0402
R140 1430690 Chip jumper 0402
R142 1430690 Chip jumper 0402
R143 1430834 Chip resistor 3.3 M 5 % 0.063 W 0402
R152 1430690 Chip jumper 0402
R154 1430122 Chip resistor 4.7 M 5 % 0.063 W 0603
R201 1430812 Chip resistor 220 k 5 % 0.063 W 0402
R202 1430804 Chip resistor 100 k 5 % 0.063 W 0402
R203 1620029 Res network 0w06 2x4k7 j 0404 0404
R211 1430804 Chip resistor 100 k 5 % 0.063 W 0402
R213 1430690 Chip jumper 0402
R215 1620023 Res network 0w06 2x47k j 0404 0404
R252 1430740 Chip resistor 330 5 % 0.063 W 0402
R254 1620027 Res network 0w06 2x47r j 0404 0404
R256 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R257 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R259 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R260 1430788 Chip resistor 22 k 5 % 0.063 W 0402
R261 1430788 Chip resistor 22 k 5 % 0.063 W 0402
R263 1430778 Chip resistor 10 k 5 % 0.063 W 0402
R265 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R267 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402
R268 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402
R270 1430804 Chip resistor 100 k 5 % 0.063 W 0402
R271 1430804 Chip resistor 100 k 5 % 0.063 W 0402
R301 1620031 Res network 0w06 2x1k0 j 0404 0404
R303 1620031 Res network 0w06 2x1k0 j 0404 0404
R305 1620031 Res network 0w06 2x1k0 j 0404 0404
R307 1620031 Res network 0w06 2x1k0 j 0404 0404
Issue 04/99
Page 3 – 95
NSE–1
PAMS
System Module
R308 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402
R309 1620031 Res network 0w06 2x1k0 j 0404 0404
R500 1430700 Chip resistor 10 5 % 0.063 W 0402
R501 1430700 Chip resistor 10 5 % 0.063 W 0402
R502 1430764 Chip resistor 3.3 k 5 % 0.063 W 0402
R504 1620019 Res network 0w06 2x10k j 0404 0404
R507 1430740 Chip resistor 330 5 % 0.063 W 0402
R530 1430700 Chip resistor 10 5 % 0.063 W 0402
R531 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R533 1430796 Chip resistor 47 k 5 % 0.063 W 0402
R550 1430752 Chip resistor 820 5 % 0.063 W 0402
R551 1430740 Chip resistor 330 5 % 0.063 W 0402
R552 1430740 Chip resistor 330 5 % 0.063 W 0402
R553 1430774 Chip resistor 6.8 k 5 % 0.063 W 0402
R554 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402
R555 1430726 Chip resistor 100 5 % 0.063 W 0402
R556 1412286 Chip jumper 0805
R570 1430726 Chip resistor 100 5 % 0.063 W 0402
R572 1820031 NTC resistor 330 10 % 0.12 W 0805
R574 1430744 Chip resistor 470 5 % 0.063 W 0402
R580 1430706 Chip resistor 15 5 % 0.063 W 0402
R581 1430832 Chip resistor 2.7 k 5 % 0.063 W 0402
R582 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R584 1430780 Chip resistor 12 k 5 % 0.063 W 0402
R585 1430774 Chip resistor 6.8 k 5 % 0.063 W 0402
R586 1430738 Chip resistor 270 5 % 0.063 W 0402
R588 1430744 Chip resistor 470 5 % 0.063 W 0402
R589 1430710 Chip resistor 22 5 % 0.063 W 0402
R600 1430788 Chip resistor 22 k 5 % 0.063 W 0402
R620 1620029 Res network 0w06 2x4k7 j 0404 0404
R621 1430744 Chip resistor 470 5 % 0.063 W 0402
R622 1430758 Chip resistor 1.5 k 5 % 0.063 W 0402
R623 1430714 Chip resistor 33 5 % 0.063 W 0402
R625 1430714 Chip resistor 33 5 % 0.063 W 0402
R626 1430740 Chip resistor 330 5 % 0.063 W 0402
R627 1430776 Chip resistor 8.2 k 5 % 0.063 W 0402
R628 1430744 Chip resistor 470 5 % 0.063 W 0402
R629 1430730 Chip resistor 150 5 % 0.063 W 0402
R630 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R631 1430700 Chip resistor 10 5 % 0.063 W 0402
R632 1430848 Chip resistor 12 k 1 % 0.063 W 0402
R634 1430848 Chip resistor 12 k 1 % 0.063 W 0402
R635 1430851 Chip resistor 15 k 2 % 0.063 W 0402
R636 1430848 Chip resistor 12 k 1 % 0.063 W 0402
R638 1430848 Chip resistor 12 k 1 % 0.063 W 0402
R640 1430734 Chip resistor 220 5 % 0.063 W 0402
R641 1820031 NTC resistor 330 10 % 0.12 W 0805
Technical Documentation
Page 3 – 96
Issue 04/99
PAMS
NSE–1
Technical Documentation
R660 1430726 Chip resistor 100 5 % 0.063 W 0402
R662 1430714 Chip resistor 33 5 % 0.063 W 0402
R664 1430764 Chip resistor 3.3 k 5 % 0.063 W 0402
R666 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402
R668 1430732 Chip resistor 180 5 % 0.063 W 0402
R670 1430726 Chip resistor 100 5 % 0.063 W 0402
R672 1430706 Chip resistor 15 5 % 0.063 W 0402
R706 1430812 Chip resistor 220 k 5 % 0.063 W 0402
R708 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
R710 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402
C100 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C101 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C102 2320538 Ceramic cap. 12 p 5 % 50 V 0402
C103 2604127 Tantalum cap. 1.0 u 20 % 35 V 3.5x2.8x1.9
C104 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C105 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C106 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C107 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C108 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C109 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C110 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C112 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C113 2320508 Ceramic cap. 1.0 p 0.25 % 50 V 0402
C114 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C115 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C116 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C117 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C118 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C119 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C120 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C121 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C122 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C127 2310784 Ceramic cap. 100 n 10 % 25 V 0805
C128 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C129 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C130 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C131 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C132 2312403 Ceramic cap. 2.2 u 10 % 10 V 1206
C133 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C140 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C142 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C143 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C146 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C160 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C161 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C201 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C202 2320620 Ceramic cap. 10 n 5 % 16 V 0402
System Module
Issue 04/99
Page 3 – 97
NSE–1
PAMS
System Module
C203 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C204 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C205 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C206 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C207 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C208 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C209 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C211 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C212 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C213 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C221 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C231 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C247 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C248 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C249 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C251 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C252 2312296 Ceramic cap. Y5 V 1210
C253 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C254 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C255 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C256 2312296 Ceramic cap. Y5 V 1210
C257 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C258 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C260 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C261 2310784 Ceramic cap. 100 n 10 % 25 V 0805
C262 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C263 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C266 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C268 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C269 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C271 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C272 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C301 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C302 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C303 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C304 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C305 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C306 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C307 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C308 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C309 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C310 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C311 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C312 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C313 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C500 2320530 Ceramic cap. 5.6 p 0.25 % 50 V 0402
C501 2320546 Ceramic cap. 27 p 5 % 50 V 0402
Technical Documentation
Page 3 – 98
Issue 04/99
PAMS
NSE–1
Technical Documentation
C502 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C504 2320534 Ceramic cap. 8.2 p 0.25 % 50 V 0402
C505 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C506 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C507 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C511 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C512 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C513 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C514 2320540 Ceramic cap. 15 p 5 % 50 V 0402
C515 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C516 2320530 Ceramic cap. 5.6 p 0.25 % 50 V 0402
C518 2320532 Ceramic cap. 6.8 p 0.25 % 50 V 0402
C520 2320602 Ceramic cap. 4.7 p 0.25 % 50 V 0402
C530 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C531 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C532 2320554 Ceramic cap. 56 p 5 % 50 V 0402
C535 2310181 Ceramic cap. 1.5 n 5 % 50 V 1206
C540 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C541 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C550 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C553 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C554 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C560 2320516 Ceramic cap. 1.5 p 0.25 % 50 V 0402
C570 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C572 2320534 Ceramic cap. 8.2 p 0.25 % 50 V 0402
C574 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C575 2320522 Ceramic cap. 2.7 p 0.25 % 50 V 0402
C582 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C583 2320544 Ceramic cap. 22 p 5 % 50 V 0402
C585 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C586 2320540 Ceramic cap. 15 p 5 % 50 V 0402
C587 2310248 Ceramic cap. 4.7 n 5 % 50 V 1206
C588 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C590 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C592 2610003 Tantalum cap. 10 u 20 % 10 V 3.2x1.6x1.6
C600 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C601 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C602 2320620 Ceramic cap. 10 n 5 % 16 V 0402
C603 2320584 Ceramic cap. 1.0 n 5 % 50 V 0402
C604 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C610 2610013 Tantalum cap. 220 u 10 % 10 V 7.3x4.3x4.1
C611 2610013 Tantalum cap. 220 u 10 % 10 V 7.3x4.3x4.1
C612 2610013 Tantalum cap. 220 u 10 % 10 V 7.3x4.3x4.1
C613 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C614 2320524 Ceramic cap. 3.3 p 0.25 % 50 V 0402
C621 2320534 Ceramic cap. 8.2 p 0.25 % 50 V 0402
C622 2320522 Ceramic cap. 2.7 p 0.25 % 50 V 0402
System Module
Issue 04/99
Page 3 – 99
NSE–1
PAMS
System Module
C623 2320534 Ceramic cap. 8.2 p 0.25 % 50 V 0402
C627 2320738 Ceramic cap. 470 p 10 % 50 V 0402
C630 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C632 2320532 Ceramic cap. 6.8 p 0.25 % 50 V 0402
C633 2320532 Ceramic cap. 6.8 p 0.25 % 50 V 0402
C635 2320560 Ceramic cap. 100 p 5 % 50 V 0402
C636 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C638 2320552 Ceramic cap. 47 p 5 % 50 V 0402
C639 2320592 Ceramic cap. 2.2 n 5 % 50 V 0402
C640 2310784 Ceramic cap. 100 n 10 % 25 V 0805
C641 2310784 Ceramic cap. 100 n 10 % 25 V 0805
C642 2320552 Ceramic cap. 47 p 5 % 50 V 0402
C643 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C644 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C649 2320131 Ceramic cap. 33 n 10 % 16 V 0603
C652 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C653 2320536 Ceramic cap. 10 p 5 % 50 V 0402
C655 2320530 Ceramic cap. 5.6 p 0.25 % 50 V 0402
C660 2320548 Ceramic cap. 33 p 5 % 50 V 0402
C662 2320546 Ceramic cap. 27 p 5 % 50 V 0402
C695 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805
C700 2320524 Ceramic cap. 3.3 p 0.25 % 50 V 0402
L103 3203701 Ferrite bead 33r/100mhz 0805 0805
L104 3203701 Ferrite bead 33r/100mhz 0805 0805
L105 3203701 Ferrite bead 33r/100mhz 0805 0805
L106 3640035 Filt z>450r/100m 0r7max 0.2a 0603 0603
L107 3640035 Filt z>450r/100m 0r7max 0.2a 0603 0603
L108 3640035 Filt z>450r/100m 0r7max 0.2a 0603 0603
L500 3643039 Chip coil 220 n 5 % Q=35/100 MHz 0805
L501 3643039 Chip coil 220 n 5 % Q=35/100 MHz 0805
L550 3640069 Filt 47pf 25v 0r01 6a 1206
L554 3646001 Chip coil 3 n Q=7/100M 0402
L580 3645161 Chip coil 150 n 5 % Q=14/100 MHz 0603
L581 3643025 Chip coil 56 n 5 % Q=40/200 MHz 0805
L600 3641206 Chip coil 10% Q=25/7.96 MHz 1008
L621 3641300 Chip coil 330 n 5 % Q=30/25 MHz 1008
L623 3641626 Chip coil 220 n 2 % Q=30/100 MHz 0805
L624 3641626 Chip coil 220 n 2 % Q=30/100 MHz 0805
B100 4510159 Crystal 32.768 k +–20PPM
G530 4350099 Vco 1006–1031mhz 2.8v 10ma gsm
G600 4510153 VCTCXO 13.0 M +–5PPM 2.8V GSM
F101 5119019 SM, fuse f 1.5a 32v 0603
Z500 4511017 Saw filter 947.5+–12.5 M /3.8DB 4X4
Z505 4511015 Saw filter 902.5+–12.5 M /3.8DB 4X4
Z550 4512005 Dupl 890–915/935–960mhz 20x14 20x14
Z620 4510009 Cer.filt 13+–0.09mhz 7.2x3.2 7.2x3.2
Z621 4511029 Saw filter 71+–0.09 M /1.5DB 14X8
Technical Documentation
Page 3 – 100
Issue 04/99
Loading...