3.1 Port Pins ...................................................................................................................................................6
(detection edge is selectable)
INT1P11
INT2InputP12/TI1/TI2Rising edge detection testable inputAsynch
KR0 to KR3I/OP60 to P63Parallel falling edge detection testable inputInput<F>-A
X1Input—Ceramic/crystal resonator connection for main system——
X2—and input inverted phase to X2.
XT1Input—Crystal resonator connection for subsystem clock oscillation.——
XT2—phase to XT2. XT1 can be used as a 1-bit (test) input.
RESETInput—System reset input (low-level active)—<B>
MD0 to MD3InputP30 to P33Mode selection for program memory (PROM) write/verifyInputE-B
D0 to D3I/O
D4 to D7P50 to P53M-E
Note 2
V
PP
VDD——Positive power supply——
Vss——Ground potential——
P60/KR0 to P63/KR3
——Programmable power supply voltage applied for program——
INT0/P10 can select noise elimination circuit.
clock oscillation. If using an external clock, input signal to X1
If using an external clock, input signal to XT1 and input inverted
Data bus for program memory (PROM) write/verifyInput<F>-A
memory (PROM) write/verify.
For normal operation, connect directly to VDD.
Apply +12.5 V for PROM write/verify.
With noise elimination
circuit/asynch is selectable
after resettype
S0 to S15
S16 to S19
S20 to S23
COM0 to COM3
VLC0 toVLC2——Power supply for driving LCD——
BIASOutput—Output for external split resistor cutNote 2—
LCDCL
Note 3
SYNC
Note 3
Output—Segment signal outputNote 1G-A
Output P93 to P90Segment signal outputInputH
Output P83 to P80Segment signal outputInputH
Output—Common signal outputNote 1G-B
I/OP30/MD0Clock output for driving external expansion driverInputE-B
I/OP31/MD1Clock output for synchronization of external expansion driverInputE-B
Notes 1. The VPP pin does not operate normally if it is not connected with VDD pin when normal operation.
2. The V
LCX (X = 0, 1, 2) shown below are selected as the input source for the display outputs.
S0 to S23: V
LC1, COM0 to COM2: VLC2, COM3: VLC0
3. When the split resistor is incorporated: Low level
When the split resistor is not incorporated : High impedance
4. These pins are provided for future system expansion. Currently, only P30 and P31 are used.
9
3.3 Equivalent Circuits for Pins
µ
The equivalent circuits for the
TYPE A TYPE D
PD75P3116’s pins are shown in abbreviated form below.
µ
PD75P3116
VDD
P-ch
IN
N-ch
CMOS standard input buffer
IN
VDD
Data
Output
disable
Push-pull output that can be set to high impedance output
(with both P-ch and N-ch OFF).
TYPE E-BTYPE B
P.U.R.
enable
Data
Type D
Output
disable
P-ch
N-ch
VDD
P.U.R.
P-ch
IN/OUT
OUT
Schmitt trigger input with hysteresis characteristics.
TYPE B-CTYPE F-A
VDD
P.U.R.
P-ch
IN
P.U.R. : Pull-Up Resistor
P.U.R.
enable
Output
disable
Data
Type A
P.U.R. : Pull-Up Resistor
P.U.R.
enable
Type D
Type B
P.U.R. : Pull-Up Resistor
VDD
P.U.R.
P-ch
IN/OUT
(Continued)
10
TYPE F-BTYPE H
VDD
P.U.R.
µ
PD75P3116
(Continued)
Output
disable
(P)
Data
Output
disable
Output
disable
(N)
P.U.R. : Pull-Up Resistor
LC0
V
VLC1
SEG
data
V
LC2
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P.U.R.
enable
VDD
P-ch
N-ch
N-chP-ch
N-ch
P-ch
IN/OUT
OUT
Output
disable
TYPE M-CTYPE G-A
SEG
data
Data
Output
disable
Data
Type G-A
Type E-B
P.U.R.
enable
N-ch
P-ch
N-ch
IN/OUT
VDD
P.U.R.
P-ch
IN/OUT
N-ch
TYPE G-BTYPE M-E
LC0
V
VLC1
COM
data
VLC2
P-ch
N-ch
N-ch
P-ch
N-ch
P-ch
N-ch
N-chP-ch
P-chN-ch
Input instruction
OUT
Data
Output
disable
Pull-up resistor that operates only when an input
Note
instruction is executed. (The current flows from
V
P.U.R. : Pull-Up Resistor
N-ch
(+13-V
withstand
Note
Voltage
controller
voltage)
(+13-V
withstand
voltage)
VDD
P-ch
P.U.R.
DD to a pin when the pin is at low level.)
IN/OUT
11
3.4 Recommended Connection of Unused Pins
Table 3-1. List of Unused Pin Connection
PinRecommended connection
P00/INT4Connect to Vss or VDD
P01/SCKIndividually connect to Vss or VDD through a resistor.
P02/SO/SB0
P03/SI/SB1Connect to Vss
P10/INT0 and P11/INT1Connect to Vss or V
P12/TI1/TI2/INT2
P13/TI0
P20/PTO0Input status : Individually connect to Vss or V
P21/PTO1through a resistor
P22/PTO2/PCLOutput status : Leave open
P23/BUZ
P30/LCDCL/MD0
P31/SYNC/MD1
P32/MD2
P33/MD3
P50/D4 to P53/D7Connect to Vss
P60/KR0/D0 to P63/KR3/D3Input status :
Output status : Leave open
S0 to S15Leave open
COM0 to COM3
S16/P93 to S19/P90Input status :
S20/P83 to S23/P80Output status : Leave open
V
LC0 to VLC2Connect to Vss
BIASConnect to Vss only when neither of V
VLC2 is used. In other cases, leave open.
Note
XT1
Note
XT2
V
PPAlways connect to VDD directly
Connect to Vss or VDD
Leave open
DD
DD
Individually connect to Vss or VDD through a resistor
Individually connect to Vss or VDD through a resistor
LC0, VLC1 and
µ
PD75P3116
12
Note In case the subsystem clock is not used, set SOS.0 = 1 (on-chip feedback
resistor not used).
µ
PD75P3116
4. Mk I AND Mk II MODE SELECTION FUNCTION
Setting a stack bank selection (SBS) register for the µPD75P3116 enables the program memory to be switched between
µ
the Mk I mode and Mk II mode. This function is applicable when using the
753106, or 753108.
When the SBS bit 3 is set to 1 : sets the Mk I mode (supports the Mk I mode for the
When the SBS bit 3 is set to 0 : sets the Mk II mode (supports the Mk II mode for the
4.1 Differences between Mk I Mode and Mk II Mode
Table 4-1 lists differences between the Mk I mode and the Mk II mode for the
Table 4-1. Differences between Mk I Mode and Mk II Mode
ItemMk I modeMk II mode
Program counterPC
Program memory (bytes)16384
Data memory (bits)512 x 4
StackStack bankSelectable via memory banks 0, 1
CALLA !addr1 instruction
InstructionCALL !addr instruction3 machine cycles4 machine cycles
execution time CALLF !faddr instruction2 machine cycles3 machine cycles
Supported mask ROMsWhen set to Mk I mode:When set to Mk II mode:
13-0
µ
PD753104, 753106, and 753108
PD75P3116 to evaluate the µPD753104,
µ
PD753104, 753106, and 753108)
µ
PD753104, 753106, and 753108)
µ
PD75P3116.
µ
PD753104, 753106, and 753108
Caution The Mk II mode supports a program area exceeding 16 Kbytes for the 75X and 75XL Series. Therefore,
this mode is effective for enhancing software compatibility with products that have a program area of
more than 16 Kbytes.
With regard to the number of stack bytes during execution of subroutine call instructions, the usable
area increases by 1 byte per stack compared to the Mk I mode when the Mk II mode is selected.
However, when the CALL !addr and CALLF !faddr instructions are used, the machine cycle becomes
longer by 1 machine cycle. Therefore, if more emphasis is placed on RAM use efficiency and
processing performance than on software compatibility, the Mk I mode should be used.
13
µ
PD75P3116
4.2 Setting of Stack Bank Selection (SBS) Register
Use the stack bank selection register to switch between the Mk I mode and Mk II mode. Figure 4-1 shows the format of
the stack bank selection register.
The stack bank selection register is set using a 4-bit memory manipulation instruction. When using the Mk I mode, be
Note
sure to initialize the stack bank selection register to 100XB
Note
be sure to initialize it to 000XB
.
at the beginning of the program. When using the Mk II mode,
Note Set the desired value for X.
Figure 4-1. Format of Stack Bank Selection Register
Address3210
SBS3 SBS2 SBS1 SBS0F84H
Symbol
SBS
Stack area specification
0
0
Memory bank 0
0
1
Memory bank 1
1
0
Setting prohibited
1
1
0Be sure to enter “0” for bit 2.
Mode selection specification
01Mk II mode
Mk I mode
Caution SBS3 is set to “1” after RESET input, and consequently the CPU operates in the Mk I mode. When using
instructions for the Mk II mode, set SBS3 to “0” and set the Mk II mode before using the instructions.
14
µ
PD75P3116
5. DIFFERENCES BETWEEN µPD75P3116 AND µPD753104, 753106, 753108
The µPD75P3116 replaces the internal mask ROM in the µPD753104, 753106, and 753108 with a one-time PROM and
features expanded ROM capacity. The µPD75P3116’s Mk I mode supports the Mk I mode in the µPD753104, 753106,
and 753108 and the µPD75P3116’s Mk II mode supports the Mk II mode in the µPD753104, 753106, and 753108.
µ
Table 5-1 lists differences among the
differences among these products before using them with PROMs for debugging or prototype testing of application
systems or, later, when using them with a mask ROM for full-scale production.
For details on the CPU functions and internal hardware, refer to the User’s Manual.
Table 5-1. Differences between
PD75P3116 and the µPD753104, 753106, and 753108. Be sure to check the
µ
PD75P3116 and µPD753104, 753106, and 753108
Item
Program counter12 bits13 bits14 bits
Program memory (bytes)Mask ROMMask ROMMask ROMOne-time PROM
Data memory (x 4 bits)512
Mask optionsPull-up resistor forAvailableNot available
PORT5(On chip/not on chip can be specified.)(Not on chip)
Split resistor for
LCD driving power supply
Wait time afterAvailableNot available
RESET(Selectable between 217/fX and 215/fX)(fixed to 215/fX)
Feedback resistorAvailableNot available
of subsystem clock(Use/not use can be selected.)(Enable)
Pin configuration Pin Nos. 5 to 8P30 to P33
Pin Nos. 10 to 13P50 to P53P50/D4 to P53/D7
Pin Nos. 14 to 17P60/KR0 to P63/KR3
Pin No. 21ICVPP
OtherNoise resistance and noise radiation may differ due to the different circuit sizes and mask
µ
PD753104
40966144819216384
layouts.
µ
PD753106
µ
PD753108
µ
P30/MD0 to P33/MD3
P60/KR0/D0 to P63/KR3/D3
PD75P3116
Note217/fX : 21.8 ms at 6.0-MHz operation, 31.3 ms at 4.19-MHz operation
215/fX : 5.46 ms at 6.0-MHz operation, 7.81 ms at 4.19-MHz operation
Note
Caution Noise resistance and noise radiation are different in PROM and mask ROMs. When changing from
PROM versions to mask ROM versions when switching from prototype development to full production,
be sure to fully evaluate the mask ROM version’s CS (not ES).
Remark For instructions other than those noted above, the BR PCDE and BR PCXA instructions can be used to branch
to addresses with changes in the PC’s lower 8 bits only.
16
Figure 6-2. Data Memory Map
µ
PD75P3116
Data area
static RAM
(512 x 4)
Stack area
Note
Display data memory
General-purpose register area
000H
01FH
020H
0FFH
100H
1DFH
1E0H
1F7H
1F8H
1FFH
Data memory
(32 x 4)
256 x 4
(224 x 4)
256 x 4
(224 x 4)
(24 x 4)
(8 x 4)
Not incorporated
Memory bank
0
1
F80H
Peripheral hardware area
FFFH
NoteMemory bank 0 or 1 can be selected as the stack area.
128 x 4
15
17
µ
PD75P3116
7. INSTRUCTION SET
(1) Representation and coding formats for operands
In the instruction’s operand area, use the following coding format to describe operands corresponding to the instruction’s
operand representations (for further description, refer to the RA75X Assembler Package User’s Manual Language(EEU-1363)). When there are several codes, select and use just one. Codes that consist of upper-case letters and + or
– symbols are key words that should be entered as they are.
For immediate data, enter an appropriate numerical value or label.
Enter register flag symbols as label descriptors instead of mem, fmem, pmem, bit, etc. (for further description, refer to the
User’s Manual). The number of labels that can be entered for fmem and pmem are restricted.
RepresentationCoding format
regX, A, B, C, D, E, H, L
reg1X, B, C, D, E, H, L
rpXA, BC, DE, HL
rp1BC, DE, HL
rp2BC, DE
rp’XA, BC, DE, HL, XA’, BC’, DE’, HL’
rp’1BC, DE, HL, XA’, BC’, DE’, HL’
rpaHL, HL+, HL–, DE, DL
rpa1DE, DL
n44-bit immediate data or label
n88-bit immediate data or label
mem8-bit immediate data or label
bit2-bit immediate data or label
fmemFB0H to FBFH, FF0H to FFFH immediate data or label
pmemFC0H to FFFH immediate data or label
addr0000H to 3FFFH immediate data or label
addr10000H to 3FFFH immediate data or label (Mk II mode only)
caddr12-bit immediate data or label
faddr11-bit immediate data or label
taddr20H to 7FH immediate data (however, bit0 = 0) or label
PORTnPORT0 to PORT3, PORT5, PORT6, PORT8, PORT9
IEXXXIEBT, IECSI, IET0 to IET2, IE0 to IE2, IE4, IEW
RBnRB0 to RB3
MBnMB0, MB1, MB15
Note
18
Note When processing 8-bit data, only even-numbered addresses can be specified.
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