NEC PS2631, PS2631L Datasheet
DATA SHEET
PHOTO COUPLERS
PS2631, PS2631L
HIGH COLLECTOR VOLTAGE 6PIN PHOTO COUPLER
DESCRIPTION
PS2631, PS2631L are optically coupled isolators containing a GaAs light emitting diode and a silicon photo
transistor.
PS2631 is in a plastic DIP (Dual In-line Package).
PS2631L is lead bending type (Gull-wing) for surface mount.
FEATURES
• High input to output isolation voltage. (BV: 5 kVr.m.s. MIN.)
• High collector to emitter voltage (VCEO). (VCEO: 200 V MIN.)
• High speed switching (t
• UL recognized [File No. E72422 (S)]
• Taping Product number (PS2631L-E3, E4)
r, tf = 10
µ
s TYP.)
APPLICATIONS
Interface circuit for various instrumentations, control equipments.
• AC Line/Digital Logic ·················································· Isolate high voltage transient
• Digital Logic/Digital Logic··········································· Eliminate spurious ground loops
• Twisted Pair line receiver··········································· Eliminate ground loop pick-up
• Telephone/Telegraph line receiver ···························· Isolate high voltage transient
• High Frequency Power Supply Feedback Control···· Maintain floating ground
Document No. P11436EJ2V0DS00 (2nd editon)
(Previous No. LC-2261)
Date Published June 1996 P
Printed in Japan
©
1990
PACKEGE DIMENSIONS (Unit: mm)
DIP (Dual In-line Package) Lead Bending type (Gull-wing)
PS2631 PS2631L
PS2631, PS2631L
10.16 MAX.
64
13
3.8
MAX.
0.65
2.8 MIN. 4.55 MAX.
1.34
2.54
0.50 ± 0.10
2.54
MAX.
0.25
PIN CONNECTION (Top View)
10.16 MAX.
64
7.62
6.5
M
0 to 15˚
13
3.8 MAX.
2.54
1.34 ± 0.10
2.54
MAX.
0.25
0.05 to 0.2
0.9 ± 0.25
9.60 ± 0.4
M
7.62
6.5
PS2631, PS2631L
2
645
132
1. Anode
2. Cathode
3. NC
4. Emitter
5. Collector
6. Base
PS2631, PS2631L
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Diode
Reverse Voltage VR 6V
Forward Current I
Power Dissipation Temperature Coefficient
Power Dissipation P
Transistor
Collector to Emitter Voltage V
Emitter to Collector Voltage V
Collector Current I
Power Dissipation Temperature Coefficient
Power Dissipation P
Isolation Voltage*
1)
Storage Temperature Tstg –55 to +150 °C
Operating Temperature T
*1) AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output.
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
F 80 mA
∆
PD/˚C 1.5 mW/˚C
D 150 mW
CEO 200 V
ECO 6V
C 50 mA
∆
PC/˚C 3.0 mW/˚C
C 300 mW
BV 5 000 Vac
opt –55 to +100 °C
CHARACTERISTIC
Diode Forward Voltage VF 1.1 1.4 V IF = 10 mA
Reverse Current IR 5
Capacitance Ct 50 pF V = 0, f = 1.0 MHz
Transistor Collector to Emitter Dark Current ICEO 200 nA VCE = 200 V, IF = 0
DC Current Gain hFE 300 IC = 2 mA, VCE = 5.0 V
Coupled Current Transfer Ratio*
Collector Saturation Voltage VCE(sat) 0.25 V IF = 10 mA, IC = 2.0 mA
Isolation Resistance R1-2 10
Isolation Capacitance C1-2 0.5 pF V = 0, f = 1.0 MHz
Rise Time*
Fall Time*
3)
3)
2)
SYMBOL
CTR (IC/IF)
tr 10
tf 10
MIN. TYP. MAX. UNIT TEST CONDITIONS
50 280 % IF = 5 mA, VCE = 5.0 V
11
µ
AVR = 5 V
Ω Vin-out = 1.0 kV
µ
s
VCC = 5 V, IF = 10 mA, RL = 1 kΩ
µ
s
VCC = 5 V, IF = 10 mA, RL = 1 kΩ
*2) CTR rank (%) *3) Test Circuit for Switching Time
K : 130 to 280
L : 80 to 150
Pulse input
M : 50 to 100
Pulse width = 100 s
Duty cycle = 1/10
µ
I
F
50
V
OUT
RL = 1 k
VCC = 5 V
Ω
3
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