查询NP84N04CHE供应商
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP84N04EHE, NP84N04KHE
NP84N04CHE, NP84N04DHE, NP84N04MHE, NP84N04NHE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R>
ORDERING INFORMATION
PART NUMBER LEAD PLATING PACKING PACKAGE
NP84N04EHE-E1-AY
NP84N04EHE-E2-AY
NP84N04KHE-E1-AY
NP84N04KHE-E2-AY
NP84N04CHE-S12-AZ
NP84N04DHE-S12-AY
NP84N04MHE-S18-AY
NP84N04NHE-S18-AY
Note1, 2
Note1, 2
Note1
Note1
Note1, 2
Note1, 2
Note1
Note1
Pure Sn (Tin) Tape 800 p/reel
Sn-Ag-Cu TO-220 (MP-25) typ. 1.9 g
50 p/tube
Pure Sn (Tin)
Tube
TO-263 (MP-25ZJ) typ. 1.4 g
TO-263 (MP-25ZK) typ. 1.5 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
R
DS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A)
• Low input capacitance
C
iss = 4410 pF TYP.
• Built-in gate protection diode
(TO-220)
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14240EJ7V0DS00 (7th edition)
Date Published October 2007 NS
Printed in Japan
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
1999, 2000, 2007
The mark <R> shows major revised points.
NP84N04EHE, NP84N04KHE, NP84N04CHE, NP84N04DHE, NP84N04MHE, NP84N04NH
E
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 40 V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (Pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature T
Storage Temperature T
Single Avalanche Current
Single Avalanche Energy
DS = 0 V) VGSS ±20 V
C = 25°C)
Note2
Note1
C = 25°C) PT 200 W
A = 25°C) PT 1.8 W
Note3
Note3
D(DC) ±84 A
I
D(pulse) ±336 A
I
ch 175 °C
stg −55 to +175 °C
AS 84/61/22 A
I
AS 70/372/484 mJ
E
Notes 1. Calculated constant current according to MAX. allowable channel temperature.
2. PW ≤ 10
3. Starting T
μ
s, Duty cycle ≤ 1%
ch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance Rth(ch-C) 0.75 °C/W
Channel to Ambient Thermal Resistance R
th(ch-A) 83.3 °C/W
2
Data Sheet D14240EJ7V0DS
NP84N04EHE, NP84N04KHE, NP84N04CHE, NP84N04DHE, NP84N04MHE, NP84N04NH
E
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 10
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10
μ
A
μ
A
Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 3.0 4.0 V
Forward Transfer Admittance | yfs | VDS = 10 V, ID = 42 A 20 47 S
Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 42 A 4.6 5.2 mΩ
Input Capacitance Ciss 4410 6620 pF
Output Capacitance Coss 950 1430 pF
Reverse Transfer Capacitance Crss
Turn-on Delay Time td(on) 36 79 ns
Rise Time tr 25 62 ns
Turn-off Delay Time td(off) 77 150 ns
Fall Time tf
Total Gate Charge QG 87 130 nC
Gate to Source Charge QGS 20 nC
Gate to Drain Charge QGD
VDS = 25 V,
GS = 0 V,
V
f = 1 MHz
V
DD = 20 V, ID = 42 A,
V
GS = 10 V,
G = 1 Ω
R
VDD = 32 V,
GS = 10 V,
V
I
D = 84 A
490 890 pF
28 69 ns
32 nC
Body Diode Forward Voltage VF(S-D) IF = 84 A, VGS = 0 V 1.0 V
Reverse Recovery Time trr 49 ns
Reverse Recovery Charge Qrr
F = 84 A, VGS = 0 V,
I
μ
di/dt = 100 A/
s
60 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
VGS = 20
PG.
→ 0
D.U.T.
G
= 25 Ω
R
50 Ω
V
BV
DSS
I
AS
I
D
V
DD
V
DS
Starting T
L
DD
V
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
G
= 2 mA
PG.
I
50 Ω
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
PG.
V
GS
0
τ
μ
τ = 1 s
Duty Cycle ≤ 1 %
G
V
V
GS
Wave Form
V
DS
Wave Form
GS
10 %
0
V
DS
90 %
V
DS
0
t
d(on)
10 %10 %
trt
t
on
V
GS
d(off)tf
t
90 %
90 %
off
R
L
V
DD
Data Sheet D14240EJ7V0DS
3
NP84N04EHE, NP84N04KHE, NP84N04CHE, NP84N04DHE, NP84N04MHE, NP84N04NH
E
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
280
100
80
60
40
20
dT - Percentage of Rated Power - %
0
0
25 50 75 100 125 150 175 200
TC - Case Temperature - °C
Figure3. FORWARD BIAS SAFE OPERATING AREA
1000
I
D(pulse)
100
R
DS(on)
(V
Limited
= 10 V)
GS
I
D(DC)
Power Dissipation
Limited
1 ms
DC
10
- Drain Current - A
D
I
1
TC = 25°C
Single Pulse
0.1
0.1
1 10 100
VDS - Drain to Source Voltage - V
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100 μs
PW = 10 μs
240
200
160
120
80
- Total Power Dissipation - W
40
T
P
0
25 50 75 100 125 150 175 200
0
T
C
- Case Temperature - °C
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
800
700
600
484 mJ
500
400
300
372 mJ
I
AS
61 A
84 A
= 22 A
200
100
- Single Avalanche Energy - mJ
70 mJ
AS
E
0
25
50 75 100 125 150 175
ch
Starting T
- Starting Channel Temperature - °C
100
R
th(ch-A)
= 83.3°C/W
10
1
R
th(ch-C)
= 0.75°C/W
0.1
- Transient Thermal Resistance - °C/W
4
th(t)
r
0.01
10
100
μ
1 m 10 m 100 m 1 10 100 1000
μ
PW - Pulse Width - s
Data Sheet D14240EJ7V0DS
Single Pulse
TC = 25°C
NP84N04EHE, NP84N04KHE, NP84N04CHE, NP84N04DHE, NP84N04MHE, NP84N04NH
E
Figure6. FORWARD TRANSFER CHARACTERISTICS
1000
Pulsed
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
Pulsed
100
TA = −55°C
10
25°C
75°C
150°C
- Drain Current - A
D
1
I
175°C
0.1
2
3
4
V
GS
- Gate to Source Voltage - V
56
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
V
DS
= 10 V
Pulsed
10
TA = 175°C
1
0.1
75°C
25°C
−55°C
320
VGS =10 V
240
160
- Drain Current - A
D
I
80
7
0
0
1
DS
- Drain to Source Voltage - V
V
2
3
4
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
ID = 42 A
Pulsed
| - Forward Transfer Admittance - S
fs
0.01
| y
0.01 0.1
D
I
1
- Drain Current - A
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
15
10
V
GS
= 10 V
101
D
- Drain Current - A
I
100 1000
- Drain to Source On-state Resistance - mΩ
DS(on)
R
5
0
10 100
Pulsed
- Drain to Source On-state Resistance - mΩ
0
0
DS(on)
R
5101015 20
GS
- Gate to Source Voltage - V
V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = VGS
4.0
ID = 250 μA
3.0
2.0
1.0
0
−50
VGS(th) - Gate to Source Threshold Voltage - V
0 50 100 150
ch - Channel Temperature - °C
T
Data Sheet D14240EJ7V0DS
5
NP84N04EHE, NP84N04KHE, NP84N04CHE, NP84N04DHE, NP84N04MHE, NP84N04NH
E
s.
R
- Drain to Source On-state Resistance - m
C
, C
, C
- Capacitance - pF
0
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE v
Ω
CHANNEL TEMPERATURE
9
8
7
DS(on)
100000
6
5
4
3
2
1
0
−50
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
GS
= 10 V
100 150
50
0
ch
- Channel Temperature - °C
T
ID = 42 A
VGS = 0 V
f = 1 MHz
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
V
GS
100
10
= 10 V
0 V
1
- Diode Forward Current - A
F
I
0.1
0
0.5
V
F(S-D)
- Source to Drain Voltage - V
1.0
Pulsed
1.5
Figure15. SWITCHING CHARACTERISTICS
1000
t
f
10000
rss
1000
oss
iss
100
0.1
11010
VDS - Drain to Source Voltage - V
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
100
10
- Reverse Recovery Time - ns
rr
t
1
0.1
1.0 10 100
I
F
- Diode Forward Current - A
C
iss
C
oss
C
rss
di/dt = 100 A/μs
V
GS
= 0 V
t
100
t
10
td(on), tr, td(off), tf - Switching Time - ns
1
r
VDD = 20 V
VGS = 10 V
RG = 1 Ω
d(off)
10.1
I
D - Drain Current - A
10 100
t
d(on)
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
10
9
40
30
= 32 V
20 V
8 V
V
GS
8
7
6
V
DD
5
20
4
3
10
- Drain to Source Voltage - V
DS
V
0
20 40 80 120
0 60 100
DS
V
QG - Gate Charge - nC
ID = 84 A
2
- Gate to Source Voltage - V
GS
1
V
0
6
Data Sheet D14240EJ7V0DS
NP84N04EHE, NP84N04KHE, NP84N04CHE, NP84N04DHE, NP84N04MHE, NP84N04NH
E
<R>
PACKAGE DRAWINGS (Unit: mm)
1)TO-263 (MP-25ZJ)
Note
10 TYP.
4
4.8 MAX.
1.3 ± 0.2
2)TO-263 (MP-25ZK)
No plating
10.0 ± 0.3
7.88 MIN.
4
1.35 ± 0.3
4.45 ± 0.2
1.3 ± 0.2
1.0 ± 0.5
123
1.4 ± 0.2
0.7 ± 0.2
2.54 TYP. 2.54 TYP.
10.0 TYP.
2 3
1
Note
3)TO-220 (MP-25)
10.6 MAX.
3.0 ± 0.3
4
φ
8.5 ± 0.2
5.7 ± 0.4
0.5R TYP.
2.8 ± 0.2
3.6 ± 0.2
5.9 MIN.6.0 MAX.
15.5 MAX.12.7 MIN.
0.8R TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
4.8 MAX.
0.5 ± 0.2
1.3 ± 0.2
8.0 TYP.
4)TO-262 (MP-25 Fin Cut)
10 TYP.
4
2 3
1
1.3 ± 0.2
2.54
123
1.0 ± 0.5
8.5 ± 0.2
0.75 ± 0.2
2.5
Note
9.15 ± 0.3
15.25 ± 0.5
0.025 to
0.25
0.5 ± 0.2
0 to 8
0.25
1.Gate
2.Drain
3.Source
4.Fin (Drain)
4.8 MAX.
2.54 ± 0.25
ο
1.3 ± 0.2
1.3 ± 0.2
0.75 ± 0.1
2.54 TYP.
2.54 TYP.
Note Not for new design
0.5 ± 0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.75 ± 0.3
2.8 ± 0.2
2.54 TYP. 2.54 TYP.
Data Sheet D14240EJ7V0DS
12.7 MIN.
0.5 ± 0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8 ± 0.2
7
E
5)TO-220 (MP-25K)
NP84N04EHE, NP84N04KHE, NP84N04CHE, NP84N04DHE, NP84N04MHE, NP84N04NH
6)TO-262 (MP-25SK)
± 0.2
φ
1.27 ± 0.2
0.8 ± 0.1
10.0
2.8 ± 0.3
4
123
13.7 ± 0.3
2.54 TYP. 2.54 TYP.
EQUIVALENT CIRCUIT
Drain
Body
Gate
Diode
3.8 ± 0.2
15.9 MAX.
6.3 ± 0.3
4.45 ± 0.2
1.3 ± 0.2
3.1 ± 0.2
0.5 ± 0.2 2.5 ± 0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
10.0 ± 0.2
4
123
1.27 ± 0.2
13.7 ± 0.3
2.54 TYP. 2.54 TYP.
0.8 ± 0.1
1.2 ± 0.38.9 ± 0.2
4.45 ± 0.2
1.3 ± 0.2
10.1 ± 0.3
3.1 ± 0.3
0.5 ± 0.2 2.5 ± 0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
8
Data Sheet D14240EJ7V0DS
NP84N04EHE, NP84N04KHE, NP84N04CHE, NP84N04DHE, NP84N04MHE, NP84N04NH
E
<R>
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
<R>
MARKING INFORMATION
NEC
84N04
Pb-free plating marking
Abbreviation of part number
Reel sideDraw-out side
HE
Lot code
<R>
RECOMMENDED SOLDERING CONDITIONS
These products should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method Soldering Conditions
Infrared reflow
MP-25ZJ, MP-25ZK
Wave soldering
MP-25, MP-25K, MP-25SK,
MP-25 Fin Cut
Partial heating
MP-25ZJ, MP-25ZK,
MP-25K, MP-25SK
Partial heating
MP-25, MP-25 Fin Cut
Caution Do not use different soldering methods together (except for partial heating).
Maximum temperature (Package's surface temperature): 260°C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Maximum temperature (Solder temperature): 260°C or below
Time: 10 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Maximum temperature (Pin temperature): 350°C or below
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Maximum temperature (Pin temperature): 300°C or below
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Recommended
Condition Symbol
IR60-00-3
THDWS
P350
P300
Data Sheet D14240EJ7V0DS
9
NP84N04EHE, NP84N04KHE, NP84N04CHE, NP84N04DHE, NP84N04MHE, NP84N04NH
E
•
The information in this document is current as of October, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
•
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
•
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
•
While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
•
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard":
"Special":
"Specific":
Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
Loading...