NEC NEZ1011-2E Datasheet
DATA SHEET
N-CHANNEL GaAs MESFET
NEZ1011-2E, NEZ1414-2E
2W X, Ku-BAND POWER GaAs MESFET
DESCRIPTION
The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high
output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
only a 50 Ω external circuit. To reduce thermal resistance the device has a PHS (Plated Heat Sink) structure. The
device incorporates a WSi (tungsten silicide) gate structure for high reliability.
FEATURES
• High Output Power : P
• High Linear Gain : 8.5 dB typ. (NEZ1011-2E), 7.5 dB typ. (NEZ1414-2E)
• High Efficiency : 30 % typ.
• Input and Output Internally Matched for Optimum performance
o (1 dB)
= +34.0 dBm typ.
ORDERING INFORMATION
Part Number Package
NEZ1011-2E
NEZ1414-2E
Remark
To order evaluation samples, please contact your local NEC sales office.
T-78
(Part number for sample order: NEZ1011-2E, NEZ1414-2E)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter Symbol Ratings Unit
Drain to Source Voltage V
Gate to Source Voltage V
Drain Current I
Gate Forward Current I
Gate Reverse Current I
Total Power Dissipat i on P
Channel Temperature T
Storage Temperature T
DS
GS
DS
GF
GR
T
ch
stg
15 V
–7 V
3.0 (NEZ1011-2E)
2.5 (NEZ1414-2E)
+20 mA
–20 mA
15 W
175 °C
–65 to +175 °C
A
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
Document No. P13725EJ1V0DS00 (1st edition)
Date Published September 1998 N CP(K)
Printed in Japan
The information in this document is subject to change without notice.
1998©
RECOMMENDED OPERATING LIMITS
Characteristics Symbol Test Condition MIN. TYP. MAX. Unit
NEZ1011-2E, NEZ1414-2E
Drain to Source Voltage V
DS
9.0 9.0 9.0 V
Gain Compression Gcomp 3 dB
Channel Temperature T
Gate Resistance
Note
Note
g
R
is the series resistance between the gate supply and the FET gate.
ch
g
R
200 1000 1000 Ω
+130 °C
[NEZ1011-2E]
A
ELECTRICAL CHARACTERISTICS (T
Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit
BV
o (1 dB)
P
DS (1 dB)
I
add (1 dB)
η
IM
DSS
p
GD
th
L
3
Saturated Drain Current I
Pinch-off Voltage V
Gate to Drain Breakdown Voltage
Thermal Resistance R
Linear Gain G
Output Power at 1 dB Gain Comp.
Drain Current at 1 dB Gain Comp.
Power Added Efficiency at 1 dB
Gain Compression Point
3rd Order Intermodulation
Distortion
= 25°C)
VDS = 1.5 V, VGS = 0 V 0.7 1.6 2.5 A
VDS = 2.5 V, IDS = 10 mA –2.5 –1.3 –0.5 V
IGD = 10 mA 15 V
Channel to Case 5.5 7.0 °C/W
f = 10.7, 11.2, 11.7 GHz
DS
= 9.0 V
V
DS
= 0.7 A (RF OFF)
I
g
= 1 kΩ
R
out
P
= +27.5 dBm (2 tone) –40 dBc
8.0 8.5 dB
33.0 34.0 dBm
0.8 1.0 A
30 %
[NEZ1414-2E]
ELECTRICAL CHARACTERISTICS (T
Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit
BV
o (1 dB)
P
DS (1 dB)
I
add (1 dB)
η
DSS
p
GD
th
L
Saturated Drain Current I
Pinch-off Voltage V
Gate to Drain Breakdown Voltage
Thermal Resistance R
Linear Gain G
Output Power at 1 dB Gain Comp.
Drain Current at 1 dB Gain Comp.
Power Added Efficiency at 1 dB
Gain Compression Point
2
A
= 25°C)
VDS = 1.5 V, VGS = 0 V 0.7 1.6 3.0 A
VDS = 2.5 V, IDS = 10 mA –3.0 –1.3 –0.5 V
IGD = 10 mA 15 V
Channel to Case 5.5 7.0 °C/W
f = 14.0 to 14.5 GHz
DS
= 9.0 V
V
DS
= 0.7 A (RF OFF)
I
g
= 1 kΩ
R
7.0 7.5 dB
33.0 34.0 dBm
0.8 1.0 A
30 %
[NEZ1011-2E] TYPICAL CHARACTERISTICS (TA = 25°C)
OUTPUT POWER, DRAIN CURRENT AND EFFICIENCY
vs. INPUT POWER
+35
NEZ1011-2E, NEZ1414-2E
80
P
out
70
60
+30
- Output Power - dBm
out
P
+25
+20
add
η
+20 +25 +30
Pin - Input Power - dBm TEST CONDITIONS
ds
V
I
ds
50
40
- Efficiency - %
add
30
η
20
10
0
: 9.0 (V)
: 0.7 (A)
3
[NEZ1011-2E] TYPICAL S-PARAMETERS
Vds = 9.0 V, Ids = 0.7 A Marker
START 9.5 GHz, STOP 13 GHz, STEP 100 MHz 1: 10.7 GHz
2: 11.7 GHz
S
11
NEZ1011-2E, NEZ1414-2E
S
12
1.0
0.5
2.0
1
0
2
–0.5
–2.0
–1.0
R
max
S
21
+90°
+135° +45°
1
= 1
+90°
+135° +45°
1
∞
±180° 0°
2
–135°
–45°
–90°
max
= 0.25
R
S
22
1.0
0.5
2.0
±180° 0°
2
–135°
–45°
–90°
max
R
4
= 5
1
0
–0.5
2
–2.0
∞
–1.0
max
= 1
R
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