NEC NES2427P-60 Datasheet

PRELIMINARY DATA SHEET

©

N-CHANNEL GaAs MES FET

NES2427P-60

60 W S-BAND PUSH-PULL POWER GaAs MES FET

DESCRIPTION

The NES2427P-60 is a 60 W push-pull type GaAs MES FET designed for high power transmitter applications for MMDS, WLL repeater and base station systems. It is capable of delivering 60 W of output power (CW) with high linear gain, high efficiency and excellent distortion. Its primary band is 2.4 to 2.7 GHz. The device employs 0.9 µm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal characteristics, and reliability.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

• Push-pull type N-channel GaAs MES FET

•VDS = 10.0 V operation

• High output power: P

• High linear gain: GL = 12.0 dB TYP.

• High power added efficiency:

O (1 dB)

= 60 W TYP.

add

= 35 % TYP. @ VDS = 10.0 V, I

η

ORDERING INFORMATION (PLAN)

Part Number Package Supplying Form

NES2427P-60 T-92 ESD protective envelope

Remark

To order evaluation samples, consult your NEC sales representative.

Dset

= 12.0 A (total), f = 2.50, 2.70 GHz

Caution Please handle this device at static-free workstation, because this is an electrostatic

sensitive device.

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. P14997EJ1V0DS00 (1st edition) Date Published July 2000 NS CP(K) Printed in Japan

2000

ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified, TA = +25 °°°°C)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter Symbol Ratings Unit

NES2427P-60

Drain to Source Voltage V Gate to Source Voltage V Gate to Drain Voltage V Drain Current I Gate Current I Total Power Dissipation Channel Temperature T Storage Temperature T

C

= +25 °C

T

Note

DS

GSO

GDO

D

G

Note

tot

P

ch

stg

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Drain to Source Voltage V Gain Compression Gcomp Channel Temperature T Set Drain Current I Gate Resistance Case Temperature

DS

ch

Dset

VDS = 10.0 V, RF OFF

Note 1

g

R

Note 2

C

T

15 V

−

7V

−

18 V

54 A 360 mA 200 W 175

−

65 to +175

°

C

°

C

−−

−

12.0 12.0 A

2.5 2.5

−−

10.0 V

3.0 dB

+150

60

°

C

Ω

°

C

g

is the series resistance between the gate supply and the FET gate.

Notes 1.

R TC MAX. = 60 °C is at the condition of I

2.

TC (°C) ≤ Tch MAX. (150 °C) − VDS (V) × I

Dset

= 12.0 A.

Dset

ELECTRICAL CHARACTERISTICS (TA = +25 °°°°C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Saturated Drain Current I Pinch-off Voltage V Thermal Resistance R Gain 1 dB Compression Output Power P Drain Current I Power Added Efficiency Linear Gain 3rd Order Intermodulation Distortion IM

Dset

= 6.0 A each drain

Notes 1.

I Pin = 32 dBm

2.

DSS

O (1 dB)

η

L

G

VDS = 2.5 V, VGS = 0 V

p

VDS = 2.5 V, ID = 168 mA

th

Channel to Case f = 2.50, 2.70 GHz, VDS = 10.0 V, 47.0 48.0

D

Rg = 2.5 Ω,

Dset

I

add

Note 2

3

= 12.0 A Total (RF OFF)

∆

f = 1 MHz,

out

P

= 39 dBm (2 tones total)

(A) × Rth MAX. (°C/W)

Note 1

−

4.0

−

36.0

−

2.1

0.65 0.75

16.0 35

10.0 12.0

−−48−

−

A V

°

C/W

dBm

A %

dB

dBc

2

Preliminary Data Sheet P14997EJ1V0DS00

TYPICAL CHARACTERISTICS (TA = +25 °°°°C)

f = 2.50 GHz f = 2.70 GHz

NES2427P-60

OUTPUT POWER, POWER ADDED

EFFICIENCY vs. INPUT POWER

55

VDS = 10.0 V, f = 2.50 GHz (1 tone)

Dset

= 12.0 A (RF OFF), Rg = 2.5 Ω

I

50

45

(dBm)

out

P

out

40

35

Output Power P

30

25

1510 20 25 30 35 40 45

Input Power Pin (dBm)

DRAIN CURRENT, GATE CURRENT

vs. INPUT POWER

20

VDS = 10.0 V, f = 2.50 GHz (1 tone)

Dset

= 12.0 A (RF OFF), Rg = 2.5 Ω

I

18

16

(A)

D

14

I

D

OUTPUT POWER, POWER ADDED

EFFICIENCY vs. INPUT POWER

60

50

(%)

add

η

40

η

add

30

20

10

Power Added Efficiency

0

55

VDS = 10.0 V, f = 2.70 GHz (1 tone)

Dset

= 12.0 A (RF OFF), Rg = 2.5 Ω

I

50

45

(dBm)

out

40

35

Output Power P

30

25

1510 20 25 30 35 40 45

Input Power Pin (dBm)

60

50

P

out

(%)

add

η

40

η

add

30

20

10

Power Added Efficiency

0

DRAIN CURRENT, GATE CURRENT

vs. INPUT POWER

120

100

80

60

(mA)

G

20

VDS = 10.0 V, f = 2.70 GHz (1 tone)

Dset

= 12.0 A (RF OFF), Rg = 2.5 Ω

I

18

16

(A)

D

14

120

100

I

D

80

60

(mA)

G

12

10

Drain Current I

8 6

Input Power Pin (dBm)

3RD ORDER INTERMODULATION DISTORTION, DRAIN CURRENT vs. 2 TONES OUTPUT POWER

0

VDS = 10.0 V, f = 2.50 GHz (2 tones)

(dBc)

3

3rd Order Intermodulation Distortion IM

–10

–20

–30

–40

–50 –60 –70

Dset

= 12.0 A (RF OFF), Rg = 2.5 Ω

I

D

IM

3

2520 30 35 40 45 50

2 tones Output Power P

out

(dBm)

40

20

I

G

Gate Current I

0

–20

45403525 30201510

12

10

Drain Current I

8 6

40

20

I

G

Gate Current I

0

–20

45403525 30201510

Input Power Pin (dBm)

3RD ORDER INTERMODULATION

DISTORTION, DRAIN CURRENT

vs. 2 TONES OUTPUT POWER

16 14

12 10

8

6

4 2

0

VDS = 10.0 V, f = 2.70 GHz (2 tones)

(dBc)

(A)

D

3

–10

–20

Dset

= 12.0 A (RF OFF), Rg = 2.5 Ω

I

–30

–40

Drain Current I

–50 –60 –70

3rd Order Intermodulation Distortion IM

2520 30 35 40 45 50

2 tones Output Power P

IM

I

D

3

out

(dBm)

16 14

12 10

8

6

4 2

(A)

D

Drain Current I

Remark

The graphs indicate nominal characteristics.

Preliminary Data Sheet P14997EJ1V0DS00

3