NEC NES1823P-45 Datasheet

PRELIMINARY DATA SHEET

©

N-CHANNEL GaAs MES FET

NES1823P-45

45 W L, S-BAND PUSH-PULL POWER GaAs MES FET

DESCRIPTION

The NES1823P-45 is a 45 W push-pull type GaAs MES FET designed for high power transmitter applications for
PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 45 W of output power (CW) with high
linear gain, high efficiency and excellent distortion under the condition of 12 V operation. Its primary band is 1.8 to

2.3 GHz, however with different matching, 60 MHz or less of instantaneous bandwidth can be achieved anywhere
from 0.8 to 2.3 GHz. The device employs 0.9 µm Tungsten Silicide gates, via holes, plated heat sink, and silicon
dioxide passivation for superior performance, thermal characteristics, and reliability.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

• Push-pull type N-channel GaAs MES FET

•VDS = 12.0 V operation

• High output power: P

• High linear gain: GL = 12 dB TYP.

• High power added efficiency:

out

= 45 W TYP.

η

add

= 45 % TYP. @ VDS = 12.0 V, I

ORDERING INFORMATION (PLAN)

Part Number Package Supplying Form

NES1823P-45 T-86 ESD protective envelope

Remark

To order evaluation samples, consult your NEC sales representative.

Dset

= 4.0 A (total), f = 2.20 GHz

Caution Please handle this device at static-free workstation, because this is an electrostatic

sensitive device.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. P14752EJ1V0DS00 (1st edition)
Date Published May 2000 NS CP(K)
Printed in Japan

2000

ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified, TA = +25 °°°°C)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter Symbol Ratings Unit

NES1823P-45

Drain to Source Voltage V
Gate to Source Voltage V
Gate to Drain Voltage V
Drain Current I
Gate Current I
Total Power Dissipation
Channel Temperature T
Storage Temperature T

C

= +25 °C

T

Note

DS

GSO

GDO

D

G

Note

tot

P

ch

stg

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Drain to Source Voltage V
Gain Compression Gcomp
Channel Temperature T
Set Drain Current I
Gate Resistance

DS

ch

Dset

VDS = 12.0 V, RF OFF

Note

g

R

19 V

−

7V

−

22 V

24 A
240 mA
165 W
175

−

65 to +175

°

C

°

C

−−

−−

−−

−

4.0 6.0 A

−−

12.0 V

3.0 dB

+150

30

°

C

Ω

g

is the series resistance between the gate supply and the FET gate.

R

Note

ELECTRICAL CHARACTERISTICS (TA = +25 °°°°C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Saturated Drain Current I
Pinch-off Voltage V
Thermal Resistance R
Output Power P
Drain Current I
Power Added Efficiency
Linear Gain
3rd Order Intermodulation Distortion IM

Dset

= 2.0 A each drain

Notes 1.

I
Pin = 21 dBm

2.

DSS

VDS = 2.5 V, VGS = 0 V

p

VDS = 2.5 V, ID = 110 mA

th

Channel to Case

out

f = 2.20 GHz, VDS = 12.0 V, 45.5 46.5

D

Pin = 37.5 dBm, Rg = 30 Ω,

Dset

I

η

add

Note2

L

G

3

= 4.0 A Total (RF OFF)

∆

f = 5 MHz,

out

P

= 37 dBm (2 tones total)

Note1

−

−

4.0

−

−

−

24.0

−

2.6

0.7 0.9

7

45

11 12

−−40−

−

−

−

−

−

−

A
V

°

C/W

dBm

A
%

dB

dBc

2

Preliminary Data Sheet P14752EJ1V0DS00

TYPICAL CHARACTERISTICS (TA = +25 °°°°C)

NES1823P-45

OUTPUT POWER,
POWER ADDED EFFICIENCY vs.
INPUT POWER [Power Matched]

50

45

I

Dset

= 4 A (total)

40

(dBm)

out

3 A (total)
2 A (total)

35

30

Output Power P

25

20

Remark

2015 25 30 35 40 45

The graphs indicate nominal characteristics.

P

out

η

VDS = 12.0 V
f = 2.20 GHz (1 tone)

Input Power Pin (dBm)

add

4 A (total)
3 A (total)
2 A (total)

60

50

(%)

add

η

40

(A)

D

30

20

Drain Current I

10

Power Added Efficiency

0

DRAIN CURRENT, GATE CURRENT

vs. INPUT POWER [Power Matched]

20

VDS = 12.0 V
f = 2.20 GHz (1 tone)

15

10

4 A (total)
3 A (total)

5

2 A (total)

0

2015 25 30 35 40 45

I

Dset

= 4 A (total)

Input Power Pin (dBm)

I

G

3 A (total)
2 A (total)

I

D

10

0

–10

–20

–30

(mA)

G

Gate Current I

Preliminary Data Sheet P14752EJ1V0DS00

3