NEC NES1823P-30 Datasheet

PRELIMINARY DATA SHEET

N-CHANNEL GaAs MES FET

NES1823P-30

30 W L-S BAND PUSH-PULL POWER GaAs MES FET

DESCRIPTION

The NES1823P-30 is a 30 W push-pull type GaAs MES FET designed for high power transmitter applications for
PCS, DCS and IMT 2000 base station systems. It is capable of delivering 30 watts of output power (CW) with high linear
gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz, however with different matching, 60
MHz or less of instantaneous bandwidth can be achieved anywhere from 0.8 to 2.3 GHz. The device employs

0.9 µm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance,
thermal characteristics, and reliability.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

• Push-pull type N-channel GaAs MES FET

• High output power : 30 W TYP.

• High linear gain : 13 dB TYP.

• High power added efficiency: 40 % TYP. @VDS = 10 V, I

Dset

= 4 A, f = 2.2 GHz

ORDERING INFORMATION (PLAN)

Part Number Package Supplying Form

NES1823P-30 T-86

Remark

To order evaluation samples, please contact your local NEC sales office.

−

(Part number for sample order: NES1823P-30)

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter Symbol Ratings Unit
Drain to Source Voltage V
Gate to Source Voltage V
Gate to Drain Voltage V
Drain Current I
Gate Current I
Total Power Dissipat i on P
Channel Temperature T
Storage Temperature T

DS

GSO

GDO

D

G

ch

stg

15 V
–7 V

–18 V

27 A

180 mA

Note

T

90

175 °C

–65 to +175 °C

W

C

= 25°C

T

Note

Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive

device.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. P14491EJ1V0DS00 (1st edition)
Date Published October 1999 N CP(K)
Printed in Japan

1999©

RECOMMENDED OPERATING LIMITS

Parameter Symbol Test Condition MIN. TYP. MAX. Unit

Drain to Source Voltage V

DS

Gain Compression Gcomp

Dset

R

ch

VDS = 10 V, RF OFF

g

Channel Temperature T
Set Drain Current I
Gate Resistance

Note

Note

g

is the series resistance between the gate supply and FET gate.

R

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

η

IM

DSS

add

G

VDS = 2.5 V, VGS = 0 V

p

VDS = 2.5 V, ID = 80 mA –4.0 –2.6

th

Channel to Case

out

f = 2.2 GHz, VDS = 10 V

in

= +36 dBm, Rg = 30

P

D

Dset

= 4.0 A Total (RF OFF)

I

L

∆

3

f = +5 MHz,

out

= 37 dBm (2-tone total)

P

Saturated Drain Current I
Pinch-off Voltage V
Thermal Resistance R
Output Power P
Drain Current I
Power Added Efficiency
Linear Gain

Note 1

3rd order Intermodulation
Distortion

NES1823P-30

−−

−−

−−

−−

−−

−

−

18.0

1.3 1.7 °C/W

44.0 45.0

Ω

Note 2

−

−

79A

40

11 13

−

–40

10.0 V

3.0 dB

+150 °C

5.0 A
30

−

−

−

dBm

−

−

−

dB

dBc

Ω

A
V

%

Notes 1.

in

= +20 dBm

P

Dset

I

= 2.0 A each drain

2.

2

Preliminaly Data Sheet P14491EJ1V0DS00

TYPICAL CHARACTERISTICS (TA = +25°°°°C)

OUTPUT POWER AND POWER ADDED EFFICIENCY
vs. INPUT POWER

50

VDS = 10 V I
f = 2.2 GHz

∆

f = 5 MHz

45

(dBm)

40

out

35

Output Power P

30

Dset

= 4.0 A Rg = 30 Ω

NES1823P-30

100

P

out

80

(%)

add

η

60

add

η

40

Power Added Efficiency

20

25

15 20 25 30 35 40

in

Input Power P

(dBm)

3RD INTERMODULATION DISTORTION
vs. 2 TONE OUTPUT POWER

0

VDS = 10 V I

Dset

= 4.0 A Rg = 30 Ω

f = 2.2 GHz

∆

f = 5 MHz

–10

(dBc)

3

–20

–30

–40

0

–50

3rd Intermodulation Distortion IM

–60

30 35 40 45

out

2 Tone Output Power 2toneP

Preliminaly Data Sheet P14491EJ1V0DS00

(dBm)

3