NEC NEL2004F02-24 Datasheet
DATA SHEET
SILICON POWER TRANSISTOR
NEL2004F02-24
NPN SILICON EPITAXIAL TRANSISTOR
L Band Power Amplifier
DESCRIPTION AND APPLICATIONS
NEL2004F02-24 of NPN epitaxial microwave power transistors
is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.
It incorporates emitter ballast resistors, gold metallizations and
OUTLINE DIMENSIONS (Unit: mm)
2
φ
2 × 3.2 ±0.3
2 ±0.2 3 ±0.2 2 ±0.2
11
offers a high degree of reliability.
FEATURES
• High Linear Power and Gain
• Low Internal Modulation Distortion
• High Reliability Gold Metallization
+0.05
–0.02
0.1
11
3
3.6 ±0.53.6 ±0.5
12.4 ±0.2
9.2 ±0.2
4.6 ±0.2
5.85 ±0.2 2.58 ±0.3
• Emitter Ballasting
• 24 V Operation
4.2 ±0.4
1 - EMITTER
2 - BASE
3 - COLLECTOR
6.1 ±0.3
2.4 ±0.2
ABSOLUTE MAXIMUM RATING (TA = 25 ˚C)
PARAMETER
Collector to Base Voltage VCBO 45 V
Collector to Emitter Voltage
Emitter to Base Voltage VEBO 3V
Collector to Emitter Voltage
Collector Current IC 1.5 A
Power Dissipation PT 19.4 W
Thermal Resistance Rth(j-c) 9 ˚C/W
Junction Temperature Tj 200 ˚C
Storage Temperature Tstg –65 to 150 ˚C
SYMBOL
VCER R = 10 Ω 30 V
VCEO 18 V
SPECIFIED CONDITION RATINGS UNIT
Document No. P11582EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
NEL2004F02-24
PARAMETER
Collector to Emitter Cutoff ICES VCE = 24 V 3 mA
Current
Collector to Emitter Voltage
(Base to Emitter Registor = 10 Ω)
Collector to Emitter Voltage
(Open Base)
Collector to Base Voltage VCBO IC = 3 mA 45 85 V
(Open Emitter)
Emitter to Base Voltage VEBO IC = 8 mA 3 4.4 V
(Open Collector)
DC Forward Current Gain hFE VCE = 5 V, IC = 0.3 A 30 100 150
Output Capacitance Cob VCE = 24 V, f = 1 MHz 6.2 pF
SYMBOL
VCER IC = 3 mA, R = 10 Ω 30 85 V
VCEO IC = 3 mA 18 22 V
SPECIFIED CONDITION MIN. TYP. MAX. UNIT
2
NEL2004F02-24
PERFORMANCE SPECIFICATIONS (TA = 25 ˚C)
CLASS AB OPERATION
PARAMETER SYMBOL SPECIFIED CONDITION MIN. TYP. MAX. UNIT
Output Power PIdB f = 1.97 GHz, Iq = 40 mA, 5 7 W
VCC = 24 V, CLASS AB
Collector Efficiency
Linear Gain GL f = 1.97 GHz, Pin = 0.2 W, Iq = 40 mA, 9.5 dB
3rd Order Intermodulation IM3 f = 1.97 GHz, ∆f = 100 kHz, 5 W PEP, –34 dBc
CLASS A OPERATION
PARAMETER SYMBOL SPECIFIED CONDITION MIN. TYP. MAX. UNIT
Output Power PIdB f = 1.97 GHz, Iq = 250 mA, 2 W
Collector Efficiency
Linear Gain GL f = 1.97 GHz, Pin = 0.01 W, Iq = 250 mA, 12 dB
3rd Order Intermodulation IM3 f = 1.97 GHz, ∆f = 100 kHz, 1 W PEP, –37 dBc
η
c f = 1.97 GHz, Pout = PIdB, Iq = 40 mA, 40 46 %
VCC = 24 V, CLASS AB
VCC = 24 V, CLASS AB
VCC = 24 V, Iq = 40 mA, CLASS AB
VCC = 20 V, CLASS A
η
c f = 1.97 GHz, Pout = PIdB, Iq = 250 mA, 35 %
VCC = 20 V, CLASS A
VCC = 20 V, CLASS A
VCC = 20 V, Iq = 250 mA, CLASS A
3
Gain (dB)
13
NEL2004F02-24
f = 1970 MHz
12
11
10
9
8
1 W 4 W
20 24 28 32 36
–25
38
η
50
40
30
20
Pout (dBm)
f1 = 1970 MHz
f2 = 1970.1 MHz
Class AB, Vcc = 24 V
I
Class A, V
I
c (%)
q = 40 mA
cc = 20 V
q = 250 mA
Class AB, V
I
cc = 24 V
q = 40 mA
–30
–35
–40
IM (dBc)
–45
–50
–55
IM3
IM5
IM7
Class A, V
I
cc = 20 V
q = 250 mA
–60
20 24 28 32 36
40
Pout (dBm) ··· PEP
4
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