NEC NEL200101-24 Datasheet
DATA SHEET
1.5 ±0.2
7 ±0.3
φ
1.0 MIN.
10 ±0.3
3
2
2 ±0.2
1.0 MIN.
1.2
+0.2
–0.1
0.2
1.6 ±0.3
0.1
+0.06
–0.04
3.0
6.2 ±0.2
1 - EMITTER
2 - BASE
3 - COLLECTOR
1
SILICON POWER TRANSISTOR
NEL200101-24
NPN SILICON EPITAXIAL TRANSISTOR
L Band Power Amplifier
DESCRIPTION AND APPLICATIONS
NEL2001012-24 of NPN epitaxial microwave power transistors
is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.
It incorporates emitter ballast resistors, gold metallizations and
offers a high degree of reliability.
FEATURES
• High Linear Power and Gain
• Low Internal Modulation Distortion
• High Reliability Gold Metallization
• Emitter Ballasting
• 24 V Operation
ABSOLUTE MAXIMUM RATING (TA = 25 ˚C)
OUTLINE DIMENSIONS (Unit: mm)
PARAMETER
Collector to Base Voltage VCBO 45 V
Collector to Emitter Voltage
Emitter to Base Voltage VEBO 3V
Document No. P11581EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
Collector to Emitter Voltage
Collector Current IC 0.5 A
Power Dissipation PT 7.4 W
Thermal Resistance Rth(j-c) 23.6 ˚C/W
Junction Temperature Tj 200 ˚C
Storage Temperature Tstg –65 to 150 ˚C
SYMBOL
VCER R = 10 Ω 30 V
VCEO 18 V
SPECIFIED CONDITION RATINGS UNIT
©
1996
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
NEL200101-24
PARAMETER
Collector to Emitter Cutoff ICES VCE = 24 V 1 mA
Current
Collector to Emitter Voltage
(Base to Emitter Registor = 10 Ω)
Collector to Emitter Voltage
(Open Base)
Collector to Base Voltage VCBO IC = 1 mA 45 85 V
(Open Emitter)
Emitter to Base Voltage VEBO IC = 3 mA 3 4.4 V
(Open Collector)
DC Forward Current Gain hFE VCE = 5 V, IC = 0.1 A 30 100 150
Output Capacitance Cob VCE = 24 V, f = 1 MHz 3 pF
SYMBOL
VCER IC = 1 mA, R = 10 Ω 30 85 V
VCEO IC = 1 mA 18 22 V
SPECIFIED CONDITION MIN. TYP. MAX. UNIT
2
NEL200101-24
PERFORMANCE SPECIFICATIONS (TA = 25 ˚C)
CLASS AB OPERATION
PARAMETER SYMBOL SPECIFIED CONDITION MIN. TYP. MAX. UNIT
Output Power PIdB f = 1.97 GHz, Iq = 20 mA, 2.5 W
VCC = 24 V, CLASS AB
Collector Efficiency
Linear Gain GL f = 1.97 GHz, Pin = 0.04 W, Iq = 20 mA, 8.8 dB
3rd Order Intermodulation IM3 f = 1.97 GHz, ∆f = 100 kHz, 2 W PEP, –33 dBc
CLASS A OPERATION
PARAMETER SYMBOL SPECIFIED CONDITION MIN. TYP. MAX. UNIT
Output Power PIdB f = 1.97 GHz, Iq = 100 mA, 0.5 0.7 W
Collector Efficiency
Linear Gain GL f = 1.97 GHz, Pin = 0.01 W, Iq = 100 mA, 10.8 dB
3rd Order Intermodulation IM3 f = 1.97 GHz, ∆f = 100 kHz, 0.5 W PEP, –36 dBc
η
c f = 1.97 GHz, Pout = PIdB, Iq = 20 mA, 54 %
VCC = 24 V, CLASS AB
VCC = 24 V, CLASS AB
VCC = 24 V, Iq = 20 mA, CLASS AB
VCC = 20 V, CLASS A
η
c f = 1.97 GHz, Pout = PIdB, Iq = 100 mA, 30 %
VCC = 20 V, CLASS A
VCC = 20 V, CLASS A
VCC = 20 V, Iq = 100 mA, CLASS A
3
Gain (dB)
11
NEL200101-24
f = 1970 MHz
10
9
8
7
0.5 W
1.0 W
20 24 28 32 36
–25
Class AB, Vcc = 24 V
I
Class A, V
I
60
η
c
(%)
50
40
30
20
P
out
(dBm)
f1 = 1970 MHz
f2 = 1970.1 MHz
Class AB, V
I
q
= 20 mA
cc
= 20 V
q
= 100 mA
cc
= 24 V
q
= 20 mA
–30
–35
–40
IM (dBc)
–45
–50
–55
cc
IM
3
IM
5
IM
7
Class A, V
I
= 20 V
q
= 100 mA
–60
20 24 28 32 36
P
out
(dBm) ··· PEP
40
4
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