NCE RFORM P4C1981-15DM, P4C1981-20DM, P4C1981-20LMB, P4C1981-45LMB, P4C1981-45DMB Datasheet

P4C1981/1981L, P4C1982/1982L

P4C1981/P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4

CMOS STATIC RAMS

FEATURES

Full CMOS, 6T Cell

High Speed (Equal Access and Cycle Times)

–10/12/15/20/25 ns (Commercial)

–12/15/20/25/35 ns (Industrial)

–15/20/25/35/45 ns (Military)

Low Power Operation (Commercial/Military)

–715 mW Active – 12/15

–550/660 mW Active – 20/25/35/45

–193/220 mW Standby (TTL Input)

–83/110 mW Standby (CMOS Input) P4C1981/1981L

–5.5 mW Standby (CMOS Input)

P4C1981L/82L (Military)

Output Enable and Dual Chip Enable Functions

5V ± 10% Power Supply

Data Retention with 2.0V Supply, 10 μA Typical

Current (P4C1981L/1982L (Military)

Separate Inputs and Outputs

–P4C1981/L Input Data at Outputs during Write

–P4C1982/L Outputs in High Z during Write

Fully TTL Compatible Inputs and Outputs

Standard Pinout (JEDEC Approved)

–28-Pin 300 mil DIP, SOJ

–28-Pin 350 x 550 mil LCC

DESCRIPTION

The P4C1981/L and P4C1982/L are 65,536-bit (16Kx4) ultra high-speed static RAMs similar to the P4C198, but with separate data I/O pins. The P4C1981/L feature a transparent write operation when OE is low; the outputs of the P4C1982/L are in high impedance during the write cycle. All devices have low power standby modes. The RAMs operate from a single 5V ± 10% tolerance power supply. With battery backup, data integrity is maintained for supply voltages down to 2.0V. Current drain is typically 10 μA from 2.0V supply.

Access times as fast as 10 nanoseconds are available, permitting greatly enhanced system operating speeds.

CMOS is used to reduce power consumption to a low 715 mW active, 193 mW standby. For the P4C1982L and P4C1981L, power is only 5.5 mW standby with CMOS input levels. The P4C1981/L and P4C1982/L are members of a family of PACE RAM™ products offering fast access times.

The P4C1981/L and P4C1982/L are available in 28-pin 300 mil DIP and SOJ, and in 28-pin 350x550 mil LCC packages providing excellent board level densities.

FUNCTIONAL BLOCK DIAGRAM

PIN CONFIGURATIONS

A		65,536-BIT		A 0		1	28	VCC							CC	13
(8)	ROW			A 1		2	27	A13				2	1	0
		MEMORY										A	A	A	V	A
	SELECT
		ARRAY		A 2		3	26	A12				3				27
A																	A12
				A3		4	25 A			A3		4	2		28 26
				A4				11		A4		5		1		25	A11
						5	24 A
I1			O1	A				10		A		6				24	A
					5	6	23	A
											5							10
I2			O2					9		A6		7				23	A9
	INPUT	COLUMN I/O		A6		7	22	I
I3	DATA		O3					4		A		8				22	I
	CONTROL			A7		8	21	I3										4
I4			O4								7						I
				A8		9	20	O4		A		9				21		3
											8
				I1		10	19	O	3	I1		10				20	O4
										I		11				19	O3
		COLUMN		I		11	18	O2			2
				2								12	14 15 16			18	O2
		SELECT		CE		12	17	O		CE
									1		1
					1							13				17
				OE		13	16	WE
CE1												OE	GND	2	WE	1
CE2	A	A		GND		14	15	CE2						CE		O
		(6)
WE	P4C1982			DIP (P5, D5-2), SOJ (J5)								LCC (L5)
OE	P4C1981					TOP VIEW		P4C1981/ 1982				TOP VIEW

Means Quality, Service and Speed

1Q97

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P4C1981/1981L, P4C1982/1982L

MAXIMUM RATINGS(1)

Symbol	Parameter	Value	Unit
VCC	Power Supply Pin with	–0.5 to +7	V
	Respect to GND
	Terminal Voltage with	–0.5 to
VTERM	Respect to GND	VCC +0.5	V
	(up to 7.0V)
TA	Operating Temperature	–55 to +125	°C

Symbol	Parameter	Value	Unit
TBIAS	Temperature Under	–55 to +125	°C
	Bias
TSTG	Storage Temperature	–65 to +150	°C
PT	Power Dissipation	1.0	W
IOUT	DC Output Current	50	mA

RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE

	Grade(2)	Ambient	GND	VCC
		Temperature
	Military	–55°C to +125°C	0V	5.0V ± 10%
	Industrial	–40°C to +85°C	0V	5.0V ± 10%
	Commercial	0°C to +70°C	0V	5.0V ± 10%

CAPACITANCES(4)

VCC = 5.0V, TA = 25°C, f = 1.0MHz

Symbol	Parameter	Conditions	Typ.	Unit
CIN	Input Capacitance	VIN = 0V	5	pF
COUT	Output Capacitance	VOUT = 0V	7	pF

DC ELECTRICAL CHARACTERISTICS

Over recommended operating temperature and supply voltage(2)

	Symbol	Parameter	Test Conditions		P4C1981 / 1982		P4C1981L / 82L		Unit
					Min	Max	Min	Max
	VIH	Input High Voltage			2.2	VCC +0.5	2.2	VCC +0.5	V
	V	Input Low Voltage			–0.5(3)	0.8	–0.5(3)	0.8	V
	IL
	VHC	CMOS Input High Voltage			VCC –0.2 VCC +0.5		VCC –0.2	VCC +0.5	V
	VLC	CMOS Input Low Voltage			–0.5(3)	0.2	–0.5(3)	0.2	V
	VCD	Input Clamp Diode Voltage	VCC = Min., IIN = –18 mA			–1.2		–1.2	V
	VOL	Output Low Voltage	IOL = +8 mA, VCC = Min.			0.4		0.4	V
		(TTL Load)
	VOH	Output High Voltage	IOH = –4 mA, VCC = Min.		2.4		2.4		V
		(TTL Load)
	ILI	Input Leakage Current	VCC = Max.	Mil.	–10	+10	–5	+5	mA
			VIN = GND to VCC	Com’l.	–5	+5	n/a	n/a
	ILO	Output Leakage Current	VCC = Max.,	Mil.	–10	+10	–5	+5	mA
			CE1, CE2 = VIH	Ind./Com’l.	–5	+5	n/a	n/a
			VOUT = GND to VCC
	ISB	Standby Power Supply	CE1, CE2 ³ VIH,	Mil.	___	40	___	40	mA
					___		___
		Current (TTL Input Levels)	VCC = Max.,	Ind./Com’l.		35		n/a
			f = Max., Outputs Open
	ISB1	Standby Power Supply	CE1, CE2 ³ VHC,	Mil.	___	20	___	1.0	mA
		Current	VCC = Max.,	Ind./Com’l.	___	15	___	n/a
		(CMOS Input Levels)	f = 0, Outputs Open

VIN £ VLC or VIN ³ VHC

n/a = Not Applicable

Notes:

1.Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to MAXIMUM ratingconditions for extended periods may affect reliability.

2.Extended temperature operation guaranteed with 400 linear feet per minute of air flow.

3.Transient inputs with VIL and IIL not more negative than –3.0V and –100mA, respectively, are permissible for pulse widths up to 20ns.

4.This parameter is sampled and not 100% tested.

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P4C1981/1981L, P4C1982/1982L

POWER DISSIPATION CHARACTERISTICS VS. SPEED

Symbol

Parameter

Temperature

Unit

Range

–10

–12

–15

–20

–25

–35

–45

Commercial

180

170

160

155

150

N/A

N/A

mA

ICC

Dynamic Operating Current*

Industrial

N/A

180

170

160

155

150

N/A

mA

Military

N/A

N/A

170

160

155

150

145

mA

*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V.

CE1 = VIL, CE2 = VIL, OE = VIH

DATA RETENTION CHARACTERISTICS (P4C1981L/P4C1982L Military Temperature Only)

					Typ.*			Max
Symbol	Parameter		Test Condition	Min	VCC=		3.0V	VCC=		3.0V	Unit
					2.0V			2.0V
VDR	VCC for Data Retention			2.0							V
ICCDR	Data Retention Current				10		15	600		900	mA
		CE1 or CE2 ³ VCC – 0.2V,
tCDR	Chip Deselect to			0							ns
	Data Retention Time	VIN	³ VCC – 0.2V or
†	Operation Recovery Time	VIN	£ 0.2V	§							ns
tR				tRC

*TA = +25°C

§tRC = Read Cycle Time

†This parameter is guaranteed but not tested.

DATA RETENTION WAVEFORM

DATA RETENTION WAVEFORM

		DATA RETENTION MODE
VCC	4.5V	VDR ≥	2V	4.5V
	tCDR
				tR
CE1 or CE2	VIH	VDR		VIH

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