NCE RFORM P4C164-12JI, P4C164-12LMB, P4C164-12LM, P4C164-15DWM, P4C164-10JI Datasheet

P4C164/164L

P4C164/P4C164L

ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS

FEATURES

Full CMOS, 6T Cell

High Speed (Equal Access and Cycle Times)

–8/10/12/15/20/25 ns (Commercial)

–10/12/15/20/25/35 (Industrial)

–12/15/20/25/35/45 ns (Military)

Low Power Operation

–770mW Active –15

–660/743 mW Active – 20

–495/575 mW Active – 25, 35, 45

–193/220 mW Standby (TTL Input)

–5.5mW Standby (CMOS Input) P4C164L (Military)

Output Enable and Dual Chip Enable Control

Functions

Single 5V±10% Power Supply

Data Retention with 2.0V Supply, 10 μA Typical

Current (P4C164L Military)

Common Data I/O

Fully TTL Compatible Inputs and Outputs

Standard Pinout (JEDEC Approved)

–28-Pin 300 mil DIP, SOJ

–28-Pin 600 mil Ceramic DIP

–28-Pin 350 x 550 mil LCC

–28-Pin CERPACK

DESCRIPTION

The P4C164 and P4C164L are 65,536-bit ultra high-speed static RAMs organized as 8K x 8. The CMOS memories require no clocks or refreshing and have equal access and cycle times. Inputs are fully TTL-compatible. The RAMs operate from a single 5V±10% tolerance power supply. With battery backup, data integrity is maintained with supply voltages down to 2.0V. Current drain is typically 10 μA from a 2.0V supply.

Access times as fast as 10 nanoseconds are available, permitting greatly enhanced system operating speeds. In full standby mode with CMOS inputs, power consumption is only 5.5 mW for the P4C164L.

The P4C164 and P4C164L are available in 28-pin 300 mil DIP and SOJ, 28-pin 600 mil ceramic DIP, and 28-pin 350 x 550 mil LCC packages providing excellent board level densities.

FUNCTIONAL BLOCK DIAGRAM

PIN CONFIGURATIONS

A0

• • • • • •

A7

I/O1

• • •

I/O8

CE1

CE2

WE

OE

ROW

SELECT

INPUT
	• •
DATA	•
CONTROL

							NC		1		28		VCC								2								1				0				CC			WE
							A 0		2	27														A					A				A			V
65,536-BIT													WE								3																				27
							A 1		3	26			CE 2					NC						4								2									26			CE2
MEMORY																																					28
ARRAY							A 2		4	25			A					A						5											1					25				A
							A 3					12						A	3																									A		12
									5	24			A		11				4					6																24						11
							A 4
									6	23			A10					A 5						7																23				A 10
							A 5		7	22			OE					A 6						8																22					OE
COLUMN I/O		• •					A 6		8	21			A 9					A 7						9																21				A 9
		•					A 7		9	20								A 8						10																20
													CE1																															CE1
							A 8		10	19			I/O 8					I/O 1						11																19				I/O8
							I/O1		11	18			I/O 7					I/O 2						12					14 15							16					18			I/O7
							I/O2		12	17			I/O 6								13																				17
							I/O3		13	16											3									GND			I/O4			5				I/O6
													I/O 5
COLUMN							GND		14	15														I/O												I/O												1519C
SELECT													I/O 4					1519B

							DIP (P5, D5-2, D5-1), SOJ (J5)	1519B	LCC (L5)
		• • • • • •					CERPACK (F4) SIMILAR		TOP VIEW
						1519A	TOP VIEW
A8			A12

Means Quality, Service and Speed

1Q97

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P4C164/164L

MAXIMUM RATINGS(1)

Symbol	Parameter	Value	Unit
VCC	Power Supply Pin with	–0.5 to +7	V
	Respect to GND
	Terminal Voltage with	–0.5 to
VTERM	Respect to GND	VCC +0.5	V
	(up to 7.0V)
TA	Operating Temperature	–55 to +125	°C

Symbol	Parameter	Value	Unit
TBIAS	Temperature Under	–55 to +125	°C
	Bias
TSTG	Storage Temperature	–65 to +150	°C
PT	Power Dissipation	1.0	W
IOUT	DC Output Current	50	mA

RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE

	Grade(2)	Ambient	GND	VCC
		Temperature
	Military	–55°C to +125°C	0V	5.0V ± 10%
	Industrial	–40°C to +85°C	0V	5.0V ± 10%
	Commercial	0°C to +70°C	0V	5.0V ± 10%

CAPACITANCES(4)

VCC = 5.0V, TA = 25°C, f = 1.0MHz

Symbol	Parameter	Conditions	Typ.	Unit
CIN	Input Capacitance	VIN = 0V	5	pF
COUT	Output Capacitance	VOUT = 0V	7	pF

DC ELECTRICAL CHARACTERISTICS

Over recommended operating temperature and supply voltage(2)

	Symbol	Parameter	Test Conditions		P4C164		P4C164L		Unit
					Min	Max	Min	Max
	VIH	Input High Voltage			2.2	VCC +0.5	2.2	VCC +0.5	V
	V	Input Low Voltage			–0.5(3)	0.8	–0.5(3)	0.8	V
	IL
	VHC	CMOS Input High Voltage			VCC –0.2 VCC +0.5		VCC –0.2	VCC +0.5	V
	V	CMOS Input Low Voltage			–0.5(3)	0.2	–0.5(3)	0.2	V
	LC
	VCD	Input Clamp Diode Voltage	VCC = Min., IIN = 18 mA			–1.2		–1.2	V
	VOL	Output Low Voltage	IOL = +8 mA, VCC = Min.			0.4		0.4	V
		(TTL Load)
	VOH	Output High Voltage	IOH = –4 mA, VCC = Min.		2.4		2.4		V
		(TTL Load)
	ILI	Input Leakage Current	VCC = Max.	Mil.	–10	+10	–5	+5	mA
			VIN = GND to VCC	Com’l.	–5	+5	n/a	n/a
	ILO	Output Leakage Current	VCC = Max., CE = VIH,	Mil.	–10	+10	–5	+5	mA
			VOUT = GND to VCC	Com’l.	–5	+5	n/a	n/a
	ISB	Standby Power Supply	CE ³ VIH or	Mil.	___	40	___	40	mA
		Current (TTL Input Levels)	CE2 £VIL, VCC= Max Ind./Com’l.		___	30	___	n/a
			f = Max., Outputs Open
	ISB1	Standby Power Supply	CE ³ VHC or	Mil.	___	25	___	1	mA
					___		___
		Current	CE2 £VLC, VCC= Max Ind./Com’l.			15		n/a
		(CMOS Input Levels)	f = 0, Outputs Open

VIN £ VLC or VIN ³ VHC

n/a = Not Applicable

Notes:

1.Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to MAXIMUM rating conditions for extended periods may affect reliability.

2.Extended temperature operation guaranteed with 400 linear feet per minute of air flow.

3.Transient inputs with VIL and IIL not more negative than –3.0V and –100mA, respectively, are permissible for pulse widths up to 20ns.

4.This parameter is sampled and not 100% tested.

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P4C164/164L

POWER DISSIPATION CHARACTERISTICS VS. SPEED

Symbol	Parameter	Temperature											Unit
		Range	–8	–10	–12	–15	–20	–25		–35
												–45
		Commercial	200	180	170	160	155	150		N/A		N/A	mA
ICC	Dynamic Operating Current*
		Industrial	N/A	190	180	170	160	155		150	N/A		mA
		Military	N/A	N/A	180	170	160	155		150	145		mA

*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE1 = VIL, CE2 = VIH, OE = VIH

DATA RETENTION CHARACTERISTICS (P4C164L, Military Temperature Only)

Typ.*

Max

Symbol

Parameter

Test Condition

Min

VCC=

3.0V

VCC=

3.0V

Unit

2.0V

2.0V

VDR

VCC for Data Retention

2.0

V

ICCDR

Data Retention Current

³ VCC – 0.2V or

10

15

200

300

mA

CE1

tCDR

Chip Deselect to

CE2

£ 0.2V, VIN ³ VCC – 0.2V

0

ns

or V

IN

£ 0.2V

Data Retention Time

t †

Operation Recovery Time

t §

ns

R

RC

*TA = +25°C

§tRC = Read Cycle Time

†This parameter is guaranteed but not tested.

DATA RETENTION WAVEFORM
			DATA RETENTION MODE
VCC		4.5V	VDR ≥	2V	4.5V
	tCDR				tR
CE1	VHC		VDR		VHC
CE2	VLC				VLC

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