National Semiconductor CD4007M, CD4007C Service Manual
CD4007M/CD4007C Dual
Complementary Pair Plus Inverter
CD4007M/CD4007C Dual Complementary Pair Plus Inverter
February 1988
General Description
The CD4007M/CD4007C consists of three complementary
pairs of N- and P-channel enhancement mode MOS transistors suitable for series/shunt applications. All inputs are protected from static discharge by diode clamps to V
V
.
SS
For proper operation the voltages at all pins must be constrained to be between V
times.
SS
b
0.3V and V
DD
a
0.3V at all
DD
and
Connection Diagram
Dual-In-Line Package
Top View
Note: All P-channel substrates are connected to V
and all N-channel substrates are connected to VSS.
Features
Y
Wide supply voltage range 3.0V to 15V
Y
High noise immunity 0.45 VCC(typ.)
TL/F/5943– 1
DD
Order Number CD4007
C
1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.
TL/F/5943
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Voltage at Any Pin V
Operating Temperature Range
CD4007M
CD4007C
SS
b
0.3V to V
b
b
a
0.3V
DD
55§Ctoa125§C
40§Ctoa85§C
Storage Temperature Range
Power Dissipation (PD)
Dual-In-Line 700 mW
Small Outline 500 mW
Operating V
Range V
DD
a
SS
Lead Temperature
(Soldering, 10 seconds) 260
DC Electrical Characteristics CD4007M
Limits
Symbol Parameter Conditions
b
55§C
Min Typ Max Min Typ Max Min Typ Max
I
Quiescent Device V
L
Current V
P
Quiescent Device V
D
Dissipation Package V
V
Output Voltage V
OL
Low Level V
V
Output Voltage V
OH
High Level V
V
Noise Immunity V
NL
(All Inputs) V
V
Noise Immunity V
NH
(All Inputs) V
IDN Output Drive Current V
N-Channel V
IDP Output Drive Current V
P-Channel V
I
Input Current 10 pA
I
e
5.0V 0.05 0.001 0.05 3.0 mA
DD
e
10V 0.1 0.001 0.1 6.0 mA
DD
e
5.0V 0.25 0.005 0.25 15 mW
DD
e
10V 1.0 0.001 1.0 60 mW
DD
e
5.0V 0.05 0 0.05 0.05 V
DD
e
10V 0.05 0 0.05 0.05 V
DD
e
5.0V 4.95 4.95 5.0 4.95 V
DD
e
10V 9.95 9.95 10 9.95 V
DD
DD
DD
DD
DD
DD
DD
DD
DD
e
e
e
e
e
e
e
e
5.0V, V
10V, V
50V, V
10V, V
5.0V, V
10V, V
5.0V, V
10V, V
e
3.6V 1.5 2.25 1.5 1.4 V
O
e
7.2V 3.0 4.5 3.0 2.9 V
O
e
0.95V 3.6 3.5 2.25 3.5 V
O
e
2.9V 7.1 7.0 4.5 7.0 V
O
e
O
e
O
e
O
e
O
0.4V, V
0.5V, V
2.5V, V
9.5V, V
e
VDD0.75 0.6 1.0 0.4 mA
I
e
V
I
e
I
e
I
1.6 1.3 2.5 0.95 mA
DD
b
1.75
V
SS
b
V
1.35
SS
b
1.4b4.0
b
1.1b2.5
a
25§C
b
b
b
65§Ctoa150§C
3.0V to V
a
a
15V
SS
C
§
125§C Units
1.0 mA
0.75 mA
DC Electrical Characteristics CD4007C
Limits
Symbol Parameter Conditions
b
40§C
Min Typ Max Min Typ Max Min Typ Max
I
Quiescent Device V
L
Current V
P
Quiescent Device V
D
Dissipation Package V
V
Output Voltage V
OL
Low Level V
V
Output Voltage V
OH
High Level V
V
Noise Immunity V
NL
(All inputs) V
V
Noise Immunity V
NH
(All Inputs) V
IDN Output Drive Current V
N-Channel V
IDP Output Drive Current V
P-Channel V
I
Input Current 10 pA
I
Note 1: This device should not be connected to circuits with the power on because high transient voltages may cause permanent damage.
e
5.0V 0.5 0.005 0.05 15 m A
DD
e
10V 1.0 0.005 1.0 30 m A
DD
e
5.0V 2.5 0.025 2.5 75 mW
DD
e
10V 10 0.05 10 300 mW
DD
e
5.0V 0.05 0 0.01 0.05 V
DD
e
10V 0.05 0 0.01 0.05 V
DD
e
5.0V 4.95 4.95 5.0 4.95 V
DD
e
10V 9.95 9.95 10 9.95 V
DD
DD
DD
DD
DD
DD
DD
DD
DD
e
e
e
e
e
e
e
e
5.0V, V
10V, V
5.0V, V
10V, V
5.0V, V
10V, V
5.0V, V
10V, V
e
3.6V 1.5 2.25 1.5 1.4 V
O
e
7.2V 3.0 4.5 3.0 2.9 V
O
e
0.95V 3.6 3.5 2.25 3.5 V
O
e
2.9V 7.1 7.0 4.5 7.0 V
O
e
O
e
O
e
O
e
O
0.4V, V
0.5V, V
2.5V, V
9.5V, V
e
VDD0.35 0.3 1.0 0.24 mA
I
e
VDD1.2 1.0 2.5 0.8 mA
I
e
b
V
I
e
I
1.3
SS
b
V
0.65
SS
2
a
b
1.1b4.0
b
0.55b2.5
25§C
b
b
a
85§C Units
0.9 mA
0.45 mA
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