MX23C8100
8M-BIT MASK ROM (8/16 BIT OUTPUT)
FEATURES
• Bit organization
- 1M x 8 (byte mode)
- 512K x 16 (word mode)
• Fast access time
- Random access: 100ns (max.)
• Current
- Operating: 60mA
- Standby: 50uA
• Supply voltage
- 5V±10%
• Package
- 44 pin SOP (500mil)
- 42 pin PDIP (600mil)
- 48 pin TSOP (20mm x 12mm)
PIN CONFIGURATION
A18
42 PDIP
CE/CE
OE/OE
A17
VSS
D10
D11
1
2
A7
3
A6
4
A5
5
A4
6
A3
7
A2
8
A1
9
A0
10
11
12
13
D0
14
D8
15
D1
16
D9
17
D2
18
19
D3
20
21
NC
42
A8
41
A9
40
A10
39
A11
38
A12
37
A13
36
A14
35
A15
34
A16
33
BYTE
32
VSS
31
D15/A-1
30
MX23C8100
D7
29
D14
28
D6
27
D13
26
D5
25
D12
24
D4
23
VCC
22
ORDER INFORMATION
Part No. Access Time Package
MX23C8100PC-10 100ns 42 pin PDIP
MX23C8100PC-12 120ns 42 pin PDIP
MX23C8100PC-15 150ns 42 pin PDIP
MX23C8100MC-10 100ns 44 pin SOP
MX23C8100MC-12 120ns 44 pin SOP
MX23C8100MC-15 150ns 44 pin SOP
MX23C8100TC-10 100ns 48 pin TSOP
MX23C8100TC-12 120ns 48 pin TSOP
MX23C8100TC-15 150ns 48 pin TSOP
Note: 40-TSOP and 48-R TSOP support word mode only ,
not for byte mode.
PIN DESCRIPTION
Symbol Pin Function
A0~A18 Address Inputs
D0~D14 Data Outputs
D15/A-1 D15 (Word Mode)/ LSB Address
(Byte Mode)
CE/CE Chip Enable Input
OE/OE Output Enable Input
Byte Word/ Byte Mode Selection
VCC Po wer Supply Pin
VSS Ground Pin
NC No Connection
44 SOP
NC
A18
A17
CE/CE
VSS
OE/OE
D0
D8
D1
D9
D2
D10
D3
D11
2
3
4
A7
5
A6
6
A5
7
A4
8
A3
9
A2
10
A1
11
A0
12
13
14
15
16
17
18
19
20
21
22
44
NC
43
NC
42
A8
41
A9
40
A10
39
A11
38
A12
37
A13
36
A14
35
A15
34
A16
33
BYTE
32
MX23C8100
VSS
31
D15/A1
30
D7
29
D14
28
D6
27
D13
26
D5
25
D12
24
D4
23
VCC
48 TSOP (for wor d mode only)
1
NC
2
A16
3
A15
4
A14
5
A13
6
A12
7
A11
8
A10
9
A9
10
A8
11
NC
12
VSS
CE/CE
13
NC
14
A18
15
A17
16
A7
17
A6
18
A5
19
A4
20
A3
21
A2
22
A1
23
A0
24
MX23C8100
48
VSS
47
VSS
46
D15/A-1
45
D7
44
D14
43
D6
42
D13
41
D5
40
D12
39
D4
38
VCC
37
VCC
36
NC
35
D11
34
D3
33
D10
32
D2
31
D9
30
D1
29
D8
28
D0
27
OE/OE
26
VSS
25
VSS
P/N:PM0138 REV. 4.5, JUL. 16, 2001
1
MX23C8100
MODE SELECTION
CE/CE OE/OE Byte D15/A-1 D0~D7 D8~D15 Mode Po wer
L/H X X X High Z High Z - Stand-by
H/L L/H X X High Z High Z - Active
H/L H/L H Output D0~D7 D8~D15 Word Active
H/L H/L L Input D0~D7 High Z Byte Active
BLOCK DIAGRAM
A0/(A-1)
A18
CE
BYTE
OE
Address
Buffer
Memory
Array
Sense
Amplifier
Word/
Byte
ABSOLUTE MAXIMUM RATINGS
Item Symbol Ratings
V oltage on any Pin Relativ e to VSS VCC -0.5V to 7.0V
Ambient Operating Temperature T opr 0°C to 70°C
Storage T emperature Tstg -65°C to 125°C
Note: minimum DC v oltage on input or I/O pins is -0.5V. During voltage transitions, inputs may undershoot VSS to -2.0V
for periods of up to 20ns. Maximum DC voltage on input or I/
O pins is VCC+0.5V. During voltage transitions, input may
overshoot VCC to VCC+2.0V for periods of up to 20ns.
Output
Buffer
D0
D15/(D7)
P/N:PM0138
REV. 4.5, JUL. 16, 2001
2
MX23C8100
DC CHARACTERISTICS (Ta = 0°C ~ 70°C, VCC = 5V±10%)
Item Symbol MIN. MAX. Conditions
Output High Voltage VOH 2.4V - IOH = -1.0mA
Output Low Voltage VOL - 0.4V IOL = 2.1mA
Input High Voltage VIH 2.2V VCC+0.3V
Input Low Voltage VIL -0.3V 0.8V
Input Leakage Current ILI - 10uA 0V, VCC
Output Leakage Current ILO - 10uA 0V , VCC
Operating Current ICC1 - 60mA tRC=100ns, all output open
Standby Current (TTL) ISTB1 - 1mA CE=VIH
Standby Current (CMOS) ISTB2 - 50uA CE> VCC - 0.2V
Input Capacitance CIN - 10pF Ta = 25°C, f = 1MHZ
Output Capacitance COUT - 10pF Ta = 25°C, f = 1MHZ
AC CHARACTERISTICS (Ta = 0°C ~ 70°C, VCC = 5V±10%)
Item Symbol 23C8100-10 23C8100-12 23C8100-15
MIN. MAX. MIN. MAX. MIN. MAX.
Read Cycle Time tR C 100ns - 120ns - 150ns Address Access Time tAA - 100ns - 120ns - 150ns
Chip Enable Access Time tACE - 100ns - 120ns - 150ns
Output Enable Time tOE - 50ns - 60ns - 70ns
Output Hold After Address tOH 0ns - 0ns - 0ns Output High Z Delay tHZ - 20ns - 20ns - 20ns
Note:Output high-impedance delay (tHZ) is measured from
OE or CE going high, and this parameter guaranteed by design over the full voltage and temperature operating range not tested.
P/N:PM0138
REV. 4.5, JUL. 16, 2001
3