Motorola TPV598 Datasheet
1
TPV598MOTOROLA RF DEVICE DATA
The RF Line
Designed for 4.0 watt stages in Band V TV transposer amplifiers. Gold
metallized dice and diffused emitter ballast resistors are used to enhance
reliability, ruggedness and linearity.
• Band IV and V (470–860 MHz)
• 4.0 W — P
ref
@ –60 dB IMD
• 25 V — V
CC
• High Gain — 7.0 dB Min, Class A @ f = 860 MHz
• Gold Metallization for Reliability
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
27 Vdc
Collector–Base Voltage V
CBO
45 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Operating Junction Temperature T
J
200 °C
Storage Temperature Range T
stg
–65 to +200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (TC = 70°C) R
θJC
6.2 °C/W
Thermal Resistance, Case to Heatsink R
θCH
0.4 Typ °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 60 mA, IB = 0) V
(BR)CEO
27 — — Vdc
Collector–Base Breakdown Voltage (IC = 10 mA, IE = 0) V
(BR)CBO
45 — — Vdc
Emitter–Base Breakdown Voltage (IE = 3.0 mA, IC = 0) V
(BR)EBO
4.0 — — Vdc
Collector–Emitter Leakage Current (VCE = 20 V) I
CEO
— — 5.0 mA
ON CHARACTERISTICS
DC Current Gain (IC = 500 mA, VCE = 20 V) h
FE
10 — — —
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 25 V, IE = 0, f = 1.0 MHz) C
ob
— — 20 pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCE = 25 V, P
out
= 4.0 W, f = 860 MHz, IC = 850 mA)
G
PE
7.0 — — dB
Intermodulation Distortion, 3 Tone
(f = 860 MHz, VCE = 25 V, IE = 850 mA, P
ref
= 4.0 W,
Vision Carrier = –8.0 dB, Sound Carrier = –7.0 dB,
Sideband Signal = –16 dB, Specification TV05001)
IMD
1
— — –58 dB
Cutoff Frequency
(VCE = 25 V, IC = 850 mA)
f
τ
— 2.0 — GHz
Order this document
by TPV598/D
SEMICONDUCTOR TECHNICAL DATA
4.0 W, 470–860 MHz
UHF LINEAR
POWER TRANSISTOR
CASE 244–04, STYLE 1
(.280 SOE)
Motorola, Inc. 1995
REV 1
TPV598
2
MOTOROLA RF DEVICE DATA
Figure 1. Broadband Test Circuit
Figure 2. Class A Bias Circuit
C1 — Variable 0.5–4.7 pF Airtronic
C2, C3 — ATC 4.7 pF
C4 — ATC 10 pF + Variable 0.5–4.7 pF Airtronic
C5 — ATC 10 pF + ATC 5.6 pF
C6 — ATC 18 pF + 0.5–4.7 pF Variable Airtronic
C7 — 470 pF Chip Capacitor
C8 — 1.0 nF + 10 nF Decoupling
C9 — 1.0 nF + 10 nF + 0.1 µF + 10 µF
C10 — 10 nF + 1.0 µF + 10 µF
RFC = 8 turns, ID 2.5 mm, Wire = 0.5 mm
L1 — 50 Ω line 6.2% λg at 860 MHz
L2 — 50 Ω line 4.2% λg at 760 MHz
L3 — 50 Ω line 4.9% λg at 860 MHz
L4 — 20 Ω line 6.5% λg at 860 MHz
L5 — 50 Ω line 5% λg at 860 MHz
L6 — 20 Ω line 9.5% λg at 860 MHz
L7 — 4.0 Ω line 8% λg at 860 MHz
L8 — 55 Ω line 7.5% λg at 860 MHz
L9 — 7.5 Ω line 8% λg at 860 MHz
L10 — 100 Ω line 8% λg at 860 MHz
L11 — 20 Ω line 8% λg at 860 MHz
Note: λg is the wavelength in the microstrip circuit
V
BE
IN
50
Ω
OUT
50
Ω
C10
C1
DUT
C2 C3 C4 C6
RFC
L1 L2 L3
C5
L4 L6 L7 L9
L8
L10
L11
C9RFC
100
Ω
C8
C7
5 mm
L5
100 µF
1N4148
22
Ω
1 k
Ω
2.2
Ω
+V
SUPPLY
V
CE
V
BE
10 nF
4.7 k
Ω
BD136
22
Ω
3 W
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