Motorola TPV597 Datasheet

1

TPV597MOTOROLA RF DEVICE DATA

The RF Line

   

. . . designed for 1.0 watt stages in Band V TV transposer amplifiers. Gold
metallized dice and diffused e mitter ballast resistors are used to enhance
reliability, ruggedness and linearity.

• Band IV and V (470–860 MHz)

• 1.0 W — P

ref

@ –58 dB IMD

• 20 V — V

CC

• High Gain — 11 dB Typ, Class A @ f = 860 MHz

• Gold Metallization for Reliability

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

24 Vdc

Collector–Base Voltage V

CBO

45 Vdc

Emitter–Base Voltage V

EBO

3.5 Vdc

Collector Current — Continuous I

C

1.4 Adc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

19

0.11

Watts

W/°C

Operating Junction Temperature T

J

200 °C

Storage Temperature Range T

stg

–65 to +200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

θJC

9.0 °C/W

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = 40 mA, IB = 0) V

(BR)CEO

24 — — Vdc

Collector–Base Breakdown Voltage (IC = 2.0 mA, IE = 0) V

(BR)CBO

45 — — Vdc

Emitter–Base Breakdown Voltage (IE = 4.0 mA, IC = 0) V

(BR)EBO

3.5 — — Vdc

Emitter–Base Leakage Current (VEB = 2.0 V) I

EBO

— — 0.5 mA

Collector–Emitter Breakdown Voltage (IC = 40 mA, RBE = 10 Ω) V

(BR)CER

50 — — Vdc

Collector Cutoff Current (VCB = 30 V, IE = 0) I

CBO

— — 1.2 mAdc

ON CHARACTERISTICS

DC Current Gain (IC = 200 mA, VCE = 5.0 V) h

FE

15 — 120 —

DYNAMIC CHARACTERISTICS

Output Capacitance (VCB = 28 V, IE = 0, f = 1.0 MHz) C

ob

— — 7.0 pF

FUNCTIONAL TESTS

Common–Emitter Amplifier Power Gain

(VCE = 20 V, P

out

= 1.0 W, f = 860 MHz, IE = 0.44 A)

G

PE

10.5 11 — dB

Load Mismatch

(VCE = 20 V, P

out

= 2.0 W, IE = 0.44 A, f = 860 MHz,

Load VSWR = ∞:1, All Phase Angles)

ψ

No Degradation in Output Power

(continued)

Order this document

by TPV597/D



SEMICONDUCTOR TECHNICAL DATA



1.0 W, 470–860 MHz
UHF LINEAR

POWER TRANSISTOR

CASE 244–04, STYLE 1

(.280 SOE)

 Motorola, Inc. 1994

TPV597
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS — continued

Characteristic UnitMaxTypMinSymbol

FUNCTIONAL TESTS (continued)

Intermodulation Distortion, 3 Tone

(f = 860 MHz, VCE = 20 V, IE = 0.44 A, P

ref

= 1.0 W,
Vision Carrier = –8.0 dB, Sound Carrier = –7.0 dB,
Sideband Signal = –16 dB, Specification TV05001)

IMD

1

— –60 –58 dB

Cutoff Frequency (VCE = 20 V, IE = 0.44 A) f

τ

2.2 2.5 — GHz

Intermodulation Distortion (IDEM)

(f = 860 MHz, VCE = 20 V, IE = 0.44 A, P

ref

= 2.0 W,
Vision Carrier = –8.0 dB, Sound Carrier = –10 dB,
Sideband Signal = –16 dB)

IMD

2

— —

–ā51

dB

Figure 1. Power Output versus Power Input

Figure 2. Large Signal Impedances

VCE = 20 V — IC = 440 mA

Figure 3. Safe Operating Area Figure 4. MTTF Factor versus Junction

Temperature

ZOL* = Conjugate of the optimum load impedance into which the
device output operates at a given output power, voltage and
frequency.

0

0.2

0.4

0.6

0.8

1

1.5

2

3

4

5

10

0

10

5

3

4

1.5

2

1

0.8

0.6

0.4

0.2

0.1

0.2

0.4

0.6

0.8
1

1.5
2

3
4

5

10

f = 1 GHz

Z

in

0.9

f = 1 GHz

ZOL*

0.8

0.7

0.6

0.5

0.5

0.8

P , OUTPUT POWER (WATTS)

out

Pin, INPUT POWER (mW)

6

40 80 120

f = 860 MHz
VCE = 20 V
IC = 440 mA

IDEAL

REAL

5

4

3

2

1

160 200 240 280 320

I

C

, COLLECTOR CURRENT (A)

0

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

2

T

HEATSINK

= 70°C

1.6

1.2

0.8

0.4

5 10 15 20 25 30

MTTF FACTOR (10

2

)

6

HRS x AMP

100

TJ, JUNCTION TEMPERATURE (°C)

120 140 160 180 200

1

80

0.1

0.01

0.001

NOTE: DIVIDE MTTF FACTORY BY I

C

2

TO OBTAIN METAL LIFE

Zo = 50

Ω