Motorola TP3061 Datasheet

1

TP3061MOTOROLA RF DEVICE DATA

The RF Line

  

The TP3061 is designed for 960 MHz mobile base stations in both analog and
digital applications. It incorporates high value emitter ballast resistors, gold
metallizations and offers a high degree of reliability and ruggedness. Including
double input and output matching networks, the TP3060 features high
impedances and is easy to match.

• Motorola Advanced Amplifier Concept Package

• Oxynitride Passivation

• Specified 26 Volts, 960 MHz Characteristics

Output Power = 45 Watts
Minimum Gain = 8.0 dB
Efficiency = 50%

• Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CER

40 Vdc

Collector–Base Voltage V

CBO

48 Vdc

Emitter–Base Voltage V

EBO

4.0 Vdc

Collector Current — Continuous I

C

10 Adc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

175

1.0

Watts
W/°C

Storage Temperature Range T

stg

–65 to +150 °C

Operating Junction Temperature T

J

200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case (1) at 70°C Case R

θJC

1.2 °C/W

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 60 mA, RBE = 75 Ω)

V

(BR)CER

40 — — Vdc

Emitter–Base Breakdown Voltage

(IC = 6.0 mAdc)

V

(BR)EBO

3.5 — — Vdc

Collector–Base Breakdown Voltage (IE = 60 mAdc) V

(BR)CBO

48 — — Vdc

Collector–Emitter Leakage (VCE = 26 V, RBE = 75 Ω) I

CER

— — 15 mA

NOTE: (continued)

1. Thermal resistance is determined under specified RF operating condition.

Order this document

by TP3061/D

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SEMICONDUCTOR TECHNICAL DATA



45 W, 960 MHz

UHF POWER
TRANSISTOR
NPN SILICON

CASE 333A–02, STYLE 2

 Motorola, Inc. 1994

REV 6

TP3061
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS — continued (T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 1.0 Adc, VCE = 10 Vdc)

h

FE

15 — 100 —

DYNAMIC CHARACTERISTICS

Output Capacitance (2)

(VCB = 26 V, IE = 0, f = 1.0 MHz)

C

ob

45 60 — pF

FUNCTIONAL TESTS

Common–Emitter Amplifier Power Gain

(VCC = 26 V, P

out

= 45 W, ICQ = 200 mA, f = 960 MHz)

G

p

8.0 8.8 — dB

Collector Efficiency

(VCC = 26 V, P

out

= 45 W, f = 960 MHz)

η 50 53 — %

Load Mismatch

(VCC = 26 V, P

out

= 45 W, ICQ = 200 mA,

Load VSWR = 5:1, at all phase angles)

ψ

No Degradation in Output Power

Before and After Test

Overdrive

(VCC = 26 V, Pin = 15 W, f = 960 MHz)

OD

No Degradation in Output Power

NOTE:

2. Value of “Cob” is that of die only. It is not measurable in TP3061 because of internal matching network.

Figure 1. 960 MHz Test Circuit

C1, C4, C7, C12 — Capacitor Chip 0805 330 pF 5%
C2 — Capacitor Chip 82 pF ATC
C5, C11, C8 — Capacitor Chip 0805 15 nF 5%
C6, C9, C10 — Capacitor Chip 0805 6.0, 8.0 µF 35 V
L1, L2 — 1.5 Turns #18 AWG Choke
R1 — Chip Resistor 47 Ω 1206 5%
R2 — Chip Resistor 270 Ω 0805 5%

R3 — Chip Resistor 47 Ω 0805 5%
R4 — Chip Resistor 100 Ω 0805 5%
R5 — Trimmer 1.0 kΩ
T1 — SMD Transistor MJD31C or Similar
T2 — SMD Transistor
T3 — Voltage Regulator 7805
Board Material — 1/50″, Teflon Glass, εr = 2.5,
Cu Clad 2 Sides, 35 µm Thick

RF INPUT

50

Ω

RF OUTPUT

50

Ω

D.U.T.

+V

CC

++

R3

C10

C11

C12

C6

C5

R1

C4

R2

C7

T1

C1

L2

L1

R5

C6

T3

C8 C9

R4

C2

T2

+