1
TP3022BMOTOROLA RF DEVICE DATA
The RF Line
The TP3022B is designed for common–emitter operation in the 900 MHz
mobile r adio band. Use of gold m etallization and silicon d iffused ballast
resistors results in a medium power output/driver transistor with state–of–the–
art ruggedness and reliability.
• Specified 26 Volts, 960 MHz Characteristics:
Output Power = 15 Watts
Minimum Gain = 8.5 dB
IQ = 50 mA
• Class AB Operation
MAXIMUM RATINGS
Rating Symbol Value Unit
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
29
0.167
Vdc
Operating Junction Temperature T
J
200 °C
Storage Temperature Range T
stg
–65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (1) R
θJC
6.0 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS (1)
Collector–Emitter Breakdown Voltage
(IC = 10 mA, RBE = 75 Ohms)
V
(BR)CER
40 — — Vdc
Collector–Emitter Leakage
(VCE = 26 V, RBE = 75 Ohms)
I
CER
— — 5.0 mA
Emitter–Base Breakdown Voltage
(IC = 5.0 mAdc)
V
(BR)EBO
3.5 — — Vdc
Emitter–Base Leakage
(VBE = 2.5 V)
I
EBO
— — 1.0 mA
ON CHARACTERISTICS
DC Current Gain
(IC = 500 mA, VCE = 10 V)
h
FE
15 — 100 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 24 V, IE = 0, f = 1.0 MHz)
C
ob
— 17 25 pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCE = 26 V, P
out
= 15 W, f = 960 MHz, IQ = 50 mA)
G
PE
8.5 — — dB
Collector Efficiency
(VCE = 26 V, P
out
= 15 W, f = 960 MHz, IQ = 50 mA)
η
c
45 — — %
NOTE:
1. Thermal resistance is determined under specified RF operating condition.