Motorola MPSW10 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
300 Vdc
Collector–Base Voltage V
CBO
300 Vdc
Emitter–Base Voltage V
EBO
6.0 Vdc
Collector Current — Continuous I
C
500 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
1.0
8.0
Watt
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
2.5
20
Watts
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
125 °C/W
Thermal Resistance, Junction to Case
R
q
JC
50 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(IC = 1.0 mAdc, IB = 0)
V
(BR)CEO
300 — Vdc
Collector–Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
V
(BR)CBO
300 — Vdc
Emitter–Base Breakdown Voltage
(IE = 100 µAdc, IC = 0)
V
(BR)EBO
6.0 — Vdc
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
I
CBO
— 0.2 µAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
I
EBO
— 0.1 µAdc
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Order this document
by MPSW10/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
1
2
3
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
MPSW10
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 30 mAdc, VCE = 10 Vdc)
h
FE
25
40
40
—
—
—
—
Collector–Emitter Saturation Voltage
(IC = 30 mAdc, IB = 3.0 mAdc)
V
CE(sat)
— 0.75 Vdc
Base–Emitter On Voltage
(IC = 30 mAdc, VCE = 10 Vdc)
V
BE(on)
— 0.85 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)
f
T
45 — MHz
Collector–Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
C
cb
— 3.0 pF
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
200
20
1.0
h
FE
, DC CURRENT GAIN
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.6
0.4
0.3
0
0.1 101.0
TJ = 25°C
IC = 10 mA
0.2 0.5 2.0 5.0 20 30
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
V, VOLTAGE (VOLTS)
1.4
0
1.0 20
TJ = 25°C
V
BE(on)
@ VCE = 10 V
V
CE(sat)
@ IC/IB = 10
5.0 10 50 70
V
BE(sat)
@ IC/IB = 10
2.0 100
IC, COLLECTOR CURRENT (mA)
Figure 4. Temperature Coefficients
2.5
1.0
R
θ
VB
for V
BE
R
V
, TEMPERATURE COEFFICIENTS (mV/ C)
°
θ
2.0 3.0 5.0 7.0 10 20 50 70 100
100
30
50
70
TJ = 125°C
25°C
–55°C
VCE = 10 V
0.5
0.2
0.1
IC = 20 mA
IC = 30 mA
3.0 7.0
1.2
1.0
0.8
0.6
0.4
0.2
205.0 10 50 702.0 1003.0 7.0
1.5
2.0
1.0
0.5
0
–0.5
–1.0
–1.5
–2.0
–2.5
I
C
I
B
+
10
R
θ
VC
for V
CE(sat)
25°C to 125°C
–55°C to 25°C
–55°C to 125°C
3030
30
5.0
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