Motorola MOCD213 Datasheet

1

Motorola Optoelectronics Device Data

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Transistor Output

This device consists of two gallium arsenide infrared emitting diodes optically
coupled to two monolithic silicon p hototransistor detectors, in a surface
mountable, small outline, plastic package. It is ideally suited for high density
applications and eliminates the need for through–the–board mounting.

• Dual Channel Coupler

• Convenient Plastic SOIC–8 Surface Mountable Package Style

• Minimum Current Transfer Ratio 100% with Input Current of 10 mA

• Minimum V

(BR)CEO

of 70 Volts Guaranteed

• Standard SOIC–8 Footprint, with 0.050″ Lead Spacing

• Shipped in Tape and Reel, which Conforms to EIA Standard RS481A

• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering

• High Input–Output Isolation of 3000 Vac (rms) Guaranteed

• Meets U.L. Regulatory Requirements, File #E54915

Ordering Information:

• To obtain MOCD213 in tape and reel, add R2 suffix to device number as follows:

R2 = 2500 units on 13″ reel

• To obtain MOCD213 in quantities of 50 (shipped in sleeves) — no suffix

Marking Information:

• MOCD213 = D213

Applications:

• Feedback Control Circuits

• Interfacing and Coupling Systems of Different Potentials and Impedances

• General Purpose Switching Circuits

• Monitor and Detection Circuits

MAXIMUM RATINGS

(TA = 25°C unless otherwise noted)

Rating Symbol Value Unit

INPUT LED

Forward Current — Continuous I

F

60 mA
Forward Current — Peak (PW = 100 µs, 120 pps) IF(pk) 1.0 A
Reverse Voltage V

R

6.0 V

LED Power Dissipation @ TA = 25°C

Derate above 25°C

P

D

90

0.8

mW

mW/°C

OUTPUT TRANSISTOR

Collector–Emitter Voltage V

CEO

70 V
Collector–Base Voltage V

CBO

70 V
Emitter–Collector Voltage V

ECO

7.0 V

Collector Current — Continuous I

C

150 mA

Detector Power Dissipation @ TA = 25°C

Derate above 25°C

P

D

150

1.76

mW

mW/°C

NOTE: Thickness through insulation between input and output is ≥ 0.5 mm.

Order this document

by MOCD213/D

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SEMICONDUCTOR TECHNICAL DATA

 Motorola, Inc. 1995

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DUAL CHANNEL

SMALL OUTLINE

OPTOISOLATOR

TRANSISTOR OUTPUT

CASE 846–01, STYLE 3

PLASTIC

SCHEMATIC

[CTR = 100% Min]

1. ANODE 1

2. CATHODE 1

3. ANODE 2

4. CATHODE 2

5. EMITTER 2

6. COLLECTOR 2

7. EMITTER 1

8. COLLECTOR 1

1

2

3

8

6

5

4

7

REV 2

MOCD213

2

Motorola Optoelectronics Device Data

MAXIMUM RATINGS—continued (T

A

= 25°C unless otherwise noted)

Rating Symbol Value Unit

TOTAL DEVICE

Input–Output Isolation Voltage(1,2)

(60 Hz, 1.0 sec. duration)

V

ISO

3000 Vac(rms)

Total Device Power Dissipation @ TA = 25°C

Derate above 25°C

P

D

250

2.94

mW

mW/°C

Ambient Operating Temperature Range

(3)

T

A

–55 to +100 °C

Storage Temperature Range

(3)

T

stg

–55 to +150 °C

Lead Soldering Temperature (1/16″ from case, 10 sec. duration) — 260 °C

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

(4)

Characteristic Symbol Min Typ

(4)

Max Unit

INPUT LED

Forward Voltage (IF = 30 mA) V

F

— 1.2 1.55 V

Reverse Leakage Current (VR = 6.0 V) I

R

— 0.1 100

m

A

Capacitance C — 18 — pF

OUTPUT TRANSISTOR

Collector–Emitter Dark Current (VCE = 10 V, TA = 25°C) I

CEO

1 — 1.0 50 nA

(VCE = 10 V, TA = 100°C) I

CEO

2 — 1.0 — µA

Collector–Emitter Breakdown Voltage (IC = 100 µA) V

(BR)CEO

70 120 — V

Emitter–Collector Breakdown Voltage (IE = 100 µA) V

(BR)ECO

7.0 7.8 — V

Collector–Emitter Capacitance (f = 1.0 MHz, VCE = 0) C

CE

— 7.0 — pF

COUPLED

Output Collector Current MOCD213

(IF = 10 mA, VCE = 5 V)

IC (CTR)

(5)

10 (100) — — mA (%)

Collector–Emitter Saturation Voltage (IC = 2.0 mA, IF = 10 mA) V

CE(sat)

— 0.15 0.4 V

Turn–On Time (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω) t

on

— 3.0 — µs

Turn–Off Time (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω) t

off

— 2.8 — µs

Rise Time (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω) t

r

— 1.6 — µs

Fall Time (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω) t

f

— 2.2 — µs

Input–Output Isolation Voltage (f = 60 Hz, t = 1.0 sec)

(1,2)

V

ISO

3000 — — Vac(rms)

Isolation Resistance (V

I–O

= 500 V)

(2)

R

ISO

10

11

— — Ω

Isolation Capacitance (V

I–O

= 0, f = 1.0 MHz)

(2)

C

ISO

— 0.2 — pF

1. Input–Output Isolation Voltage, V

ISO

, is an internal device dielectric breakdown rating.

2. For this test, pins 1, 2, 3, and 4 are common, and pins 5, 6, 7 and 8 are common.

3. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.

4. Always design to the specified minimum/maximum electrical limits (where applicable).

5. Current Transfer Ratio (CTR) = IC/IF x 100%.