Motorola MMSF3300R2 Datasheet
1
Motorola TMOS Power MOSFET Transistor Device Data
!
Power Surface Mount Products
WaveFET devices are an advanced series of power MOSFETs which utilize Motorola’s
latest MOSFET technology process to achieve the lowest possible on–resistance per silicon
area. They are capable of withstanding high energy in the avalanche and commutation
modes and the drain–to–source diode has a very low reverse recovery time. WaveFET
devices are designed for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and power management
in portable and battery powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass storage products
such as disk drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
• Characterized Over a Wide Range of Power Ratings
• Ultralow R
DS(on)
Provides Higher Efficiency and
Extends Battery Life in Portable Applications
• Logic Level Gate Drive — Can Be Driven by
Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I
DSS
Specified at Elevated Temperature
• Avalanche Energy Specified
• Miniature SO–8 Surface Mount Package —
Saves Board Space
MAXIMUM RATINGS
(TJ = 25°C unless otherwise specified)
Parameter
Symbol Value Unit
Drain–to–Source Voltage V
DSS
30 Vdc
Drain–to–Gate Voltage V
DGR
30 Vdc
Gate–to–Source Voltage V
GS
±20 Vdc
Gate–to–Source Operating Voltage V
GS
±16 Vdc
Operating and Storage Temperature Range TJ, T
stg
–55 to 150 °C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, L = 18.8 mH, I
L(pk)
= 7.3 A, VDS = 30 Vdc)
E
AS
500
mJ
DEVICE MARKING ORDERING INFORMATION
Device Reel Size Tape Width Quantity
S3300
MMSF3300R2 13″ 12 mm embossed tape 2500 units
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS and WaveFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Order this document
by MMSF3300/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1998
CASE 751–06, Style 12
SO–8
SINGLE TMOS
POWER MOSFET
30 VOLTS
R
DS(on)
= 12.5 m
W
D
G
S
Source
1
2
3
4
8
7
6
5
TOP VIEW
Source
Source
Gate
Drain
Drain
Drain
Drain
REV 3
MMSF3300
2
Motorola TMOS Power MOSFET Transistor Device Data
POWER RATINGS
(TJ = 25°C unless otherwise specified)
Parameter
Symbol Value Unit
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp ≤ 10 ms)
Mounted on 1 inch square
FR–4 or G10 board
I
D
I
D
I
DM
11.5
8.2
50
Adc
Adc
Adc
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
VGS = 10 Vdc
P
D
2.5
20
Watts
mW/°C
Thermal Resistance — Junction–to–Ambient
t ≤ 10 seconds
R
θJA
50 °C/W
Continuous Source Current (Diode Conduction)
t ≤ 10 seconds
I
S
3.0 Adc
Parameter Symbol Value Unit
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp ≤ 10 ms)
Mounted on 1 inch square
FR–4 or G10 board
I
D
I
D
I
DM
9.1
6.5
50
Adc
Adc
Adc
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
VGS = 10 Vdc
P
D
1.6
12.5
Watts
mW/°C
Thermal Resistance — Junction–to–Ambient
Steady State
R
θJA
80 °C/W
Continuous Source Current (Diode Conduction)
Steady State
I
S
2.0 Adc
Parameter Symbol Value Unit
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp ≤ 10 ms)
Mounted on minimum recommended
FR–4 or G10 board
I
D
I
D
I
DM
9.1
6.5
50
Adc
Adc
Adc
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
VGS = 10 Vdc
P
D
1.6
12.5
Watts
mW/°C
Thermal Resistance — Junction–to–Ambient
t ≤ 10 seconds
R
θJA
80 °C/W
Continuous Source Current (Diode Conduction)
t ≤ 10 seconds
I
S
2.0 Adc
Parameter Symbol Value Unit
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp ≤ 10 ms)
Mounted on minimum recommended
FR–4 or G10 board
I
D
I
D
I
DM
6.7
4.7
50
Adc
Adc
Adc
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
VGS = 10 Vdc
P
D
0.8
6.7
Watts
mW/°C
Thermal Resistance — Junction–to–Ambient
Steady State
R
θJA
150 °C/W
Continuous Source Current (Diode Conduction)
Steady State
I
S
1.0 Adc
MMSF3300
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
T emperature Coef ficient (Positive)
V
(BR)DSS
30
—
—
24
—
—
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
I
DSS
—
—
0.004
0.5
1.0
10
µAdc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) I
GSS
— — 100 nAdc
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
—
1.9
4.4
—
—
Vdc
mV/°C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
R
DS(on)
—
—
10
16
12.5
20
mΩ
Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc) g
FS
3.0 18 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
— 1700 —
pF
Output Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz
)
C
oss
— 600 —
Transfer Capacitance
f = 1.0 MHz)
C
rss
— 200 —
SWITCHING CHARACTERISTICS
(2)
Turn–On Delay Time
t
d(on)
— 21 40
ns
Rise Time
(VDD = 25 Vdc, ID = 1.0 Adc,
t
r
— 45 90
Turn–Off Delay Time
V
GS
=
4.5 Vd
c,
RG = 6.0 Ω)
t
d(off)
— 40 80
Fall Time
G
)
t
f
— 40 80
Turn–On Delay Time
t
d(on)
— 12 25
ns
Rise Time
(VDD = 25 Vdc, ID = 1.0 Adc,
t
r
— 12 25
Turn–Off Delay Time
V
GS
= 10 Vdc,
RG = 6.0 Ω)
t
d(off)
— 55 110
Fall Time
G
)
t
f
— 39 80
Gate Charge
Q
T
— 45 60
nC
(VDS = 15 Vdc, ID = 2.0 Adc,
Q
1
— 5.1 —
(
DS
,
D
,
VGS = 10 Vdc)
Q
2
— 14 —
Q
3
— 13 —
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(1)
(IS = 2.3 Adc, VGS = 0 Vdc)
(IS = 2.3 Adc, VGS = 0 Vdc, TJ = 125°C)
V
SD
—
—
0.78
0.60
1.1
—
Vdc
Reverse Recovery Time
t
rr
— 40 —
ns
(IS = 3.5 Adc, VGS = 0 Vdc,
t
a
— 21 —
(
S
,
GS
,
dIS/dt = 100 A/µs)
t
b
— 19 —
Reverse Recovery Stored Charge Q
RR
— 0.043 — µC
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperatures.
MMSF3300
4
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
, DRAIN–TO–SOURCE RESIST ANCE
(NORMALIZED)
R
DS(on)
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
0
4
8
10
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
Figure 1. On–Region Characteristics
I
D
, DRAIN CURRENT (AMPS)
2.0 2.5
4.0
0
4
8
I
D
, DRAIN CURRENT (AMPS)
VGS, GATE–T O–SOURCE VOLT AGE (VOLTS)
Figure 2. Transfer Characteristics
23 4 10
0
0.20
0.30
024 68 16
0.016
0.018
0.020
0.008
VGS, GATE–T O–SOURCE VOLT AGE (VOLTS)
Figure 3. On–Resistance versus
Gate–T o–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.5
2.0
51015 30
1
100
1000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
DSS
, LEAKAGE (nA)
VDS ≥ 10 V
TJ = 125°C
25°C
–55°C
TJ = 25°C
VGS = 0 V
ID = 5.0 A
TJ = 25
°
C
VGS = 4.5 V
VGS = 10 V
ID = 10 A
3.0 3.5
56789 10
10 V
–50 –25 0 25 50 75 100 125 150
TJ = 125°C
1.0
10
20 25
100°C
R
DS(on)
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
0 0.25 0.50 1.250.75 1.00
1.50 1.75 2.00
2
TJ = 25°C
1
6
2
6
10
0.10
0.002
0.004
0.006
0
0.5
0
0.1
3
7
5
9
3
7
1
5
9
0.15
0.25
0.05
0.014
0.010
0.012
12
6.0 V
4.5 V
4.1 V
3.7 V
3.3 V
3.1 V
2.9 V
25°C
VGS = 2.7 V
10 V
3.5 V
14
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