MOTOROLA MMSF3300 Technical data

S3300



查询MMSF3300/D供应商

SEMICONDUCTOR TECHNICAL DATA

 

!

Power Surface Mount Products



Order this document

by MMSF3300/D



  



   

WaveFET devices are an advanced series of power MOSFETs which utilize Motorola’s
latest MOSFET technology process to achieve the lowest possible on–resistance per silicon
area. They are capable of withstanding high energy in the avalanche and commutation
modes and the drain–to–source diode has a very low reverse recovery time. WaveFET
devices are designed for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and power management
in portable and battery powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass storage products
such as disk drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.

• Characterized Over a Wide Range of Power Ratings

• Ultralow R

Extends Battery Life in Portable Applications

• Logic Level Gate Drive — Can Be Driven by

Logic ICs

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• I

• Avalanche Energy Specified

• Miniature SO–8 Surface Mount Package —

Specified at Elevated Temperature

DSS

Saves Board Space

Provides Higher Efficiency and

DS(on)

G

D

S

SINGLE TMOS

POWER MOSFET

30 VOLTS

R

CASE 751–06, Style 12

Source
Source
Source

Gate

DS(on)

TOP VIEW

= 12.5 m

SO–8

1

8

2

7

3

6

4

5

W

Drain
Drain
Drain
Drain

MAXIMUM RATINGS

Drain–to–Source Voltage V
Drain–to–Gate Voltage V
Gate–to–Source Voltage V
Gate–to–Source Operating Voltage V
Operating and Storage Temperature Range TJ, T
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 25 Vdc, VGS = 10 Vdc, L = 18.8 mH, I

DEVICE MARKING ORDERING INFORMATION

This document contains information on a new product. Specifications and information herein are subject to change without notice.

HDTMOS and WaveFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.

REV 2

Motorola TMOS Power MOSFET Transistor Device Data

 Motorola, Inc. 1997

(TJ = 25°C unless otherwise specified)

Parameter

= 7.3 A, VDS = 30 Vdc)

L(pk)

Device Reel Size Tape Width Quantity

MMSF3300R2 13″ 12 mm embossed tape 2500 units

Symbol Value Unit

DSS

DGR

GS
GS

E

AS

stg

30 Vdc
30 Vdc

±20 Vdc
±16 Vdc

–55 to 150 °C

mJ

500

1

MMSF3300

t ≤ 10 seconds

Steady State

t ≤ 10 seconds

Steady State

POWER RATINGS

Drain Current — Continuous @ TA = 25°C

Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp ≤ 10 ms)

Total Power Dissipation @ TA = 25°C

Linear Derating Factor
Thermal Resistance — Junction–to–Ambient
Continuous Source Current (Diode Conduction)

Drain Current — Continuous @ TA = 25°C

Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp ≤ 10 ms)

Total Power Dissipation @ TA = 25°C

Linear Derating Factor
Thermal Resistance — Junction–to–Ambient
Continuous Source Current (Diode Conduction)

Drain Current — Continuous @ TA = 25°C

Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp ≤ 10 ms)

Total Power Dissipation @ TA = 25°C

Linear Derating Factor
Thermal Resistance — Junction–to–Ambient
Continuous Source Current (Diode Conduction)

(TJ = 25°C unless otherwise specified)

Parameter

Mounted on 1 inch square

FR–4 or G10 board

VGS = 10 Vdc

t ≤ 10 seconds

Parameter Symbol Value Unit

Mounted on 1 inch square

FR–4 or G10 board

VGS = 10 Vdc

Steady State

Parameter Symbol Value Unit

Mounted on minimum recommended

FR–4 or G10 board

VGS = 10 Vdc

t ≤ 10 seconds

Symbol Value Unit

R

R

R

I

P

I

P

I

P

I

D

I

D

DM

θJA
I

S

I

D

I

D

DM

θJA
I

S

I

D

I

D

DM

θJA
I

S

D

D

D

11.5

8.2
50

2.5
20

50 °C/W

3.0 Adc

9.1

6.5
50

1.6

12.5
80 °C/W

2.0 Adc

9.1

6.5
50

1.6

12.5
80 °C/W

2.0 Adc

Adc
Adc
Adc

Watts

mW/°C

Adc
Adc
Adc

Watts

mW/°C

Adc
Adc
Adc

Watts

mW/°C

Parameter Symbol Value Unit

Drain Current — Continuous @ TA = 25°C

Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp ≤ 10 ms)

Total Power Dissipation @ TA = 25°C

Linear Derating Factor
Thermal Resistance — Junction–to–Ambient
Continuous Source Current (Diode Conduction)

Mounted on minimum recommended

FR–4 or G10 board

VGS = 10 Vdc

Steady State

R

I

P

I

D

I

D

DM

θJA
I

S

6.7

4.7
50

D

0.8

6.7

150 °C/W

1.0 Adc

Adc
Adc
Adc

Watts

mW/°C

2

Motorola TMOS Power MOSFET Transistor Device Data

MMSF3300

)

f = 1.0 MHz)

V

4.5 Vd

G

)

V

G

)

(

DS

,

D

,

(

S

,

GS

,

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 mAdc)
T emperature Coef ficient (Positive)

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)

Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc) g

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

Reverse Recovery Time

Reverse Recovery Stored Charge Q

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperatures.

(1)

(2)

(1)

= 25°C unless otherwise specified)

J

(VDS = 24 Vdc, VGS = 0 Vdc,

(VDD = 25 Vdc, ID = 1.0 Adc,

(VDD = 25 Vdc, ID = 1.0 Adc,

(VDS = 15 Vdc, ID = 2.0 Adc,

(IS = 2.3 Adc, VGS = 0 Vdc, TJ = 125°C)

f = 1.0 MHz

=

GS
RG = 6.0 Ω)

= 10 Vdc,

GS

RG = 6.0 Ω)

VGS = 10 Vdc)

(IS = 2.3 Adc, VGS = 0 Vdc)

(IS = 3.5 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

c,

V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

FS

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

V

SD

t

rr

t

a

t

b

RR

30
—

—
—

— — 100 nAdc

1.0
—

—
—

3.0 18 — Mhos

— 1700 —
— 600 —
— 200 —

— 21 40
— 45 90
— 40 80
— 40 80
— 12 —
— 12 —
— 55 —
— 39 —

T
1
2
3

— 45 60
— 5.1 —
— 14 —
— 13 —

—
—

— 40 —
— 21 —
— 19 —
— 0.043 — µC

—
24

0.004

0.5

1.9

4.4

10
16

0.78

0.60

—
—

1.0
10

—
—

12.5
20

1.1
—

Vdc

mV/°C

µAdc

Vdc

mV/°C

mΩ

pF

ns

ns

nC

Vdc

ns

Motorola TMOS Power MOSFET Transistor Device Data

3

MMSF3300

TYPICAL ELECTRICAL CHARACTERISTICS

10

9
8
7
6
5
4
3

, DRAIN CURRENT (AMPS)

D

I

2
1

0

0 0.25 0.50 1.250.75 1.00

10 V

3.5 V

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

6.0 V

4.5 V

4.1 V

3.7 V

3.3 V
TJ = 25°C

VGS = 2.7 V

1.50 1.75 2.00

Figure 1. On–Region Characteristics

0.30

0.25

0.20

0.15

0.10

0.05

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

0

DS(on)

23 4 10

R

VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)

56789 10

ID = 5.0 A
TJ = 25

3.1 V

2.9 V

°

C

10

VDS ≥ 10 V

9
8
7
6
5
4
3

, DRAIN CURRENT (AMPS)

D

I

2
1

0

2.0 2.5
VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)

25°C

TJ = 125°C

–55°C

3.0 3.5

Figure 2. Transfer Characteristics

0.020

0.018

0.016

0.014

0.012

0.010

0.008

0.006

0.004

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

0.002
0

DS(on)

024 68 16

R

TJ = 25°C

ID, DRAIN CURRENT (AMPS)

VGS = 4.5 V

10 V

12

4.0

14

Figure 3. On–Resistance versus

Gate–T o–Source Voltage

2.0
VGS = 10 V

ID = 10 A

1.5

1.0

(NORMALIZED)

0.5

, DRAIN–TO–SOURCE RESIST ANCE

DS(on)

R

0

–50 –25 0 25 50 75 100 125 150

°

TJ, JUNCTION TEMPERATURE (

C)

Figure 5. On–Resistance Variation with

T emperature

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

1000

VGS = 0 V

100

10

, LEAKAGE (nA)

DSS

I

1

0.1
51015 30

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

TJ = 125°C

100°C

25°C

20 25

Figure 6. Drain–T o–Source Leakage

Current versus Voltage

4

Motorola TMOS Power MOSFET Transistor Device Data

POWER MOSFET SWITCHING

MMSF3300

Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge controlled.
The lengths of various switching intervals (∆t) are deter­mined by how fast the FET input capacitance can be charged
by current from the generator.

The published capacitance data is difficult to use for calculat­ing rise and fall because drain–gate capacitance varies
greatly with applied voltage. Accordingly , gate charge data is
used. In most cases, a satisfactory estimate of average input
current (I

) can be made from a rudimentary analysis of

G(A V)

the drive circuit so that
t = Q/I

G(AV)

During the rise and fall time interval when switching a resis­tive load, VGS remains virtually constant at a level known as
the plateau voltage, V

. Therefore, rise and fall times may

SGP

be approximated by the following:
tr = Q2 x RG/(VGG – V
tf = Q2 x RG/V

GSP

GSP

)

where
VGG = the gate drive voltage, which varies from zero to V

GG

RG = the gate drive resistance
and Q2 and V

are read from the gate charge curve.

GSP

During the turn–on and turn–off delay times, gate current is
not constant. The simplest calculation uses appropriate val­ues from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:

t

d(on)

t

d(off)

= RG C
= RG C

In [VGG/(VGG – V

iss

In (VGG/V

iss

GSP

)]

GSP

)

The capacitance (C

) is read from the capacitance curve at

iss

a voltage corresponding to the off–state condition when cal­culating t
on–state when calculating t

and is read at a voltage corresponding to the

d(on)

d(off)

.

At high switching speeds, parasitic circuit elements com­plicate the analysis. The inductance of the MOSFET source
lead, inside the package and in the circuit wiring which is
common to both the drain and gate current paths, produces a
voltage at the source which reduces the gate drive current.
The voltage is determined by Ldi/dt, but since di/dt is a func­tion of drain current, the mathematical solution is complex.
The MOSFET output capacitance also complicates the
mathematics. And finally, MOSFETs have finite internal gate
resistance which effectively adds to the resistance of the
driving source, but the internal resistance is difficult to mea­sure and, consequently , is not specified.

The resistive switching time variation versus gate resis­tance (Figure 9) shows how typical switching performance is
affected by the parasitic circuit elements. If the parasitics
were not present, the slope of the curves would maintain a
value of unity regardless of the switching speed. The circuit
used to obtain the data is constructed to minimize common
inductance in the drain and gate circuit loops and is believed
readily achievable with board mounted components. Most
power electronic loads are inductive; the data in the figure is
taken with a resistive load, which approximates an optimally
snubbed inductive load. Power MOSFETs may be safely op­erated into an inductive load; however, snubbing reduces
switching losses.

VDS = 0 VGS = 0

C

iss

C

rss

0

V

V

DS

GS

GATE–T O–SOURCE OR DRAIN–TO–SOURCE VOLT AGE (VOLTS)

C, CAPACITANCE (pF)

4000
3500
3000
2500
2000
1500
1000

500

Figure 7. Capacitance Variation

Motorola TMOS Power MOSFET Transistor Device Data

TJ = 25°C

15 20 25

C
C

C

iss

oss

rss

3010 0 5 105

5

MMSF3300

12

QT

10

V

8

6 9

Q1

Q2

Q3

10 20 40

QG, TOTAL GATE CHARGE (nC)

, GATE–T O–SOURCE VOLT AGE (VOLTS)

GS

V

4

2

0

0

GS

ID = 2.0 A
TJ = 25

30

18

15

12

6

°

C

3

V

DS

0

50

V

DS

, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

1000

VDD = 25 V
ID = 1.0 A
VGS = 10 V
TJ = 25

°

C

100

t, TIME (ns)

10

1 10 100

RG, GATE RESISTANCE (OHMS)

t

d(off)

t

f

t

r

t

d(on)

Figure 8. Gate–T o–Source and Drain–To–Source

V oltage versus Total Charge

DRAIN–TO–SOURCE DIODE CHARACTERISTICS

The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse re­covery characteristics which play a major role in determining
switching losses, radiated noise, EMI and RFI.

System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier de­vice, therefore it has a finite reverse recovery time, trr, due to
the storage of minority carrier charge, QRR, as shown in the
typical reverse recovery wave form of Figure 16. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery further
increases switching losses. Therefore, one would like a
diode with short trr and low QRR specifications to minimize
these losses.

The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current ring­ing. The mechanisms at work are finite irremovable circuit
parasitic inductances and capacitances acted upon by high

Figure 9. Resistive Switching Time

Variation versus Gate Resistance

di/dts. The diode’s negative di/dt during ta is directly con­trolled by the device clearing the stored charge. However,
the positive di/dt during tb is an uncontrollable diode charac­teristic and is usually the culprit that induces current ringing.
Therefore, when comparing diodes, the ratio of tb/ta serves
as a good indicator of recovery abruptness and thus gives a
comparative estimate of probable noise generated. A ratio of
1 is considered ideal and values less than 0.5 are considered
snappy.

Compared to Motorola standard cell density low voltage
MOSFETs, high cell density MOSFET diodes are faster
(shorter trr), have less stored charge and a softer reverse re­covery characteristic. The softness advantage of the high
cell density diode means they can be forced through reverse
recovery at a higher di/dt than a standard cell MOSFET
diode without increasing the current ringing or the noise gen­erated. In addition, power dissipation incurred from switching
the diode will be less due to the shorter recovery time and
lower switching losses.

8

VGS = 0 V

7

TJ = 25

°

C

6
5
4
3
2

, SOURCE CURRENT (AMPS)

S

I

1
0

0.50 0.55 0.60 0.65 0.70
VSD, SOURCE–TO–DRAIN VOL TAGE (VOLTS)

0.75 0.80

Figure 10. Diode Forward V oltage versus Current

6

Motorola TMOS Power MOSFET Transistor Device Data

MMSF3300

di/dt = 300 A/µs

, SOURCE CURRENT

S

I

Figure 11. Reverse Recovery T ime (trr)

SAFE OPERATING AREA

The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is for­ward biased. Curves are based upon maximum peak junc­tion temperature and a case temperature (TC) of 25°C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance – Gen­eral Data and Its Use.”

Switching between the off–state and the on–state may tra­verse any load line provided neither rated peak current (IDM)
nor rated voltage (V
time (tr, tf) does not exceed 10 µs. In addition the total power

) is exceeded, and that the transition

DSS

Standard Cell Density

t

rr

High Cell Density

t

rr

t

b

t

a

t, TIME

averaged over a complete switching cycle must not exceed
(T

J(MAX)

– TC)/(R

θJC

).

A power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For reli­able operation, the stored energy from circuit inductance dis­sipated in the transistor while in avalanche must be less than
the rated limit and must be adjusted for operating conditions
differing from those specified. Although industry practice is to
rate in terms of energy, avalanche energy capability is not a
constant. The energy rating decreases non–linearly with an
increase of peak current in avalanche and peak junction tem­perature.

100

10

1

, DRAIN CURRENT (AMPS)

0.1

D

I

0.01

0.1

100 ms

10 ms

dc

VGS = 10 V
SINGLE PULSE
TC = 25

°

C

R

LIMIT

DS(on)

THERMAL LIMIT
PACKAGE LIMIT

1

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

1 ms

10

Figure 12. Maximum Rated Forward Biased

Safe Operating Area

100

500

400

300

200

AVALANCHE ENERGY (mJ)

100

, SINGLE PULSE DRAIN–TO–SOURCE

AS

E

0

25

Figure 13. Maximum Avalanche Energy versus

ID = 7.3 A

50

TJ, STARTING JUNCTION TEMPERATURE (°C)

75

100 125

Starting Junction T emperature

150

Motorola TMOS Power MOSFET Transistor Device Data

7

MMSF3300

1000

DUTY CYCLE

TYPICAL ELECTRICAL CHARACTERISTICS

MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT

100

10

THERMAL RESISTANCE

1

Rthja(t), EFFECTIVE TRANSIENT

0.1
1E–05 1E–04 1E–03 1E–02 1E–01

10,000

1000

100

THERMAL RESISTANCE

10

Rthja(t), EFFECTIVE TRANSIENT

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

MIN PAD, ja

RC

1.11

6.2
74

65.3

1.242

19.55
242
982

18,050

1
2
3
4
5

0.075

P

(pk)

t

1

DUTY CYCLE, D = t1/t

1E+00 1E+01 1E+02

t, TIME (seconds)

Figure 14. Thermal Response — Various Duty Cycles

1 INCH, ja

RC

0.060

0.84

14.6
28

39.8

0.412

5.16
123
706

14,646

0.57

0.073

MIN PAD, jl

RC

0.016

0.17

6.4

5.3

2.7

2.1

158

6,256

CHIP
JUNCTION

R1

C1

C2

R

(t) = r(t) R

θ

JA

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN

R3

C3

READ TIME AT t
T

J(pk)

2

R4

C4

t

2

R2

– TA = P

C5

θ

JA

1

R

(pk)

R5

R

thja

R

, 1 INCH PAD

thja

R

, MIN PAD

thjl

(t)

θ

JA

AMBIENT

, MIN PAD

1E+03

1

1E–03 1E–02 1E–01 1E+00 1E+01 1E+02 1E+03

t, TIME (seconds)

Figure 15. Thermal Response — Various

Mounting/Measurement Conditions

80

di/dt

I

S

t

rr

t

t

a

b

TIME

t

p

0.25 I

S

I

S

Figure 16. Diode Reverse Recovery Waveform



NOTE: SPICE

and SABER model data for Motorola power devices is available at http://design–net.sps.mot.com/home2/models

60

40

POWER (W)

20

0

0.01

0.1
t, TIME (seconds)

Figure 17. Single Pulse Power

101

8

Motorola TMOS Power MOSFET Transistor Device Data

INFORMATION FOR USING THE SO–8 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must be
the correct size to ensure proper solder connection interface

MMSF3300

between the board and the package. With the correct pad
geometry, the packages will self–align when subjected to a
solder reflow process.

0.060

1.52

0.275

7.0

0.024

0.6

SO–8 POWER DISSIP ATION

The power dissipation of the SO–8 is a function of the input
pad size. This can vary from the minimum pad size for
soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by T
temperature of the die, R
device junction to ambient; and the operating temperature, TA.
Using the values provided on the data sheet for the SO–8
package, PD can be calculated as follows:

PD =

The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into

, the maximum rated junction

J(max)

, the thermal resistance from the

θJA

T

J(max)

R

θJA

– T

A

0.155

4.0

0.050

1.270

inches

mm

the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this case
is 2.5 Watts.

PD =

150°C – 25°C

50°C/W

= 2.5 Watts

The 50°C/W for the SO–8 package assumes the
recommended footprint on a glass epoxy printed circuit board
to achieve a power dissipation of 2.5 Watts using the footprint
shown. Another alternative would be to use a ceramic
substrate or an aluminum core board such as Thermal Clad.
Using board material such as Thermal Clad, the power
dissipation can be doubled using the same footprint.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.

• Always preheat the device.

• The delta temperature between the preheat and soldering

should be 100°C or less.*

• When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.

Motorola TMOS Power MOSFET Transistor Device Data

• The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

• When shifting from preheating to soldering, the maximum

temperature gradient shall be 5°C or less.

• After soldering has been completed, the device should be

allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.

• Mechanical stress or shock should not be applied during

cooling.

* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.

9

MMSF3300

TYPICAL SOLDER HEATING PROFILE

For any given circuit board, there will be a group of control
settings that will give the desired heat pattern. The operator
must set temperatures for several heating zones and a figure
for belt speed. T aken together , these control settings make up
a heating “profile” for that particular circuit board. On
machines controlled by a computer, the computer remembers
these profiles from one operating session to the next. Figure
18 shows a typical heating profile for use when soldering a
surface mount device to a printed circuit board. This profile will
vary among soldering systems, but it is a good starting point.
Factors that can affect the profile include the type of soldering
system in use, density and types of components on the board,
type of solder used, and the type of board or substrate material
being used. This profile shows temperature versus time. The

line on the graph shows the actual temperature that might be
experienced on the surface of a test board at or near a central
solder joint. The two profiles are based on a high density and
a low density board. The Vitronics SMD310 convection/in­frared reflow soldering system was used to generate this
profile. The type of solder used was 62/36/2 Tin Lead Silver
with a melting point between 177–189°C. When this type of
furnace is used for solder reflow work, the circuit boards and
solder joints tend to heat first. The components on the board
are then heated by conduction. The circuit board, because it
has a large surface area, absorbs the thermal energy more
efficiently, then distributes this energy to the components.
Because of this effect, the main body of a component may be
up to 30 degrees cooler than the adjacent solder joints.

200

150

100

50°C

STEP 1

PREHEA T

ZONE 1
“RAMP”

°

C

DESIRED CURVE FOR HIGH
MASS ASSEMBLIES

°

C

°

C

TIME (3 TO 7 MINUTES TOTAL)

STEP 2

VENT

“SOAK”

150°C

Figure 18. T ypical Solder Heating Profile

STEP 3

HEATING

ZONES 2 & 5

“RAMP”

100°C

DESIRED CURVE FOR LOW
MASS ASSEMBLIES

STEP 4

HEATING

ZONES 3 & 6

“SOAK”

°

C

160

°

C

140

T

MAX

STEP 6

VENT

STEP 5

HEATING

ZONES 4 & 7

“SPIKE”

170°C

SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)

STEP 7

COOLING

205

°

TO 219°C
PEAK AT
SOLDER JOINT

10

Motorola TMOS Power MOSFET Transistor Device Data

A

C

E

B

A1

MMSF3300

P ACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.

D

58

0.25MB

1

H

4

e

M

h

X 45

_

q

C

A

SEATING
PLANE

0.10

L

B

SS

A0.25MCB

CASE 751–06

ISSUE T

2. DIMENSIONS ARE IN MILLIMETER.

3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.

5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.

MILLIMETERS

DIM MIN MAX

A 1.35 1.75

A1 0.10 0.25

B 0.35 0.49
C 0.19 0.25
D 4.80 5.00

E

3.80 4.00

1.27 BSCe

H 5.80 6.20

h

0.25 0.50

L 0.40 1.25

0 7

q

STYLE 12:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

6. DRAIN

7. DRAIN

8. DRAIN

__

Motorola TMOS Power MOSFET Transistor Device Data

11

MMSF3300

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.

How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141,

P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 4–32–1 Nishi–Gotanda, Shagawa–ku, Tokyo, Japan. 03–5487–8488

Customer Focus Center: 1–800–521–6274
Mfax: [e-mail] – TOUCHTONE 1–602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

Moto rola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T ., Hong Kong. 852–26629298
HOME PAGE: http://motorola.com/sps/

12

– http://sps.motorola.com/mfax/

◊

Motorola TMOS Power MOSFET Transistor Device Data

Mfax is a trademark of Motorola, Inc.

MMSF3300/D