Motorola MJE18604D2 Datasheet
1
Motorola Bipolar Power Transistor Device Data
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The MJE18604D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).
Tight dynamic characteristics and lot to lot low spread (±150 ns on storage time) make
it ideally suitable for light ballast applications. Therefore, there is no more a need to
guarantee an hfe window.
Main features:
• Low Base Drive Requirement
• High DC Current Gain (30 Typical) @ IC = 400 mA
• Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active
Antisaturation (H2BIP) Structure which Minimizes the Spread
• Integrated Collector–Emitter Free Wheeling Diode Matched with the Power
Transistor
• Fully Characterized and Guaranteed Dynamic V
CE(sat)
• “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads
MAXIMUM RATINGS
Rating
Symbol
ОООООООО
ОООООООО
ОООООООО
Value
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Unit
Collector–Emitter Breakdown Voltage
V
CEO
ОООООООО
ОООООООО
ОООООООО
800
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Collector–Emitter Sustaining Voltage @ R = 200 Ω
V
CER
ОООООООО
ОООООООО
ОООООООО
800
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Collector–Base Breakdown Voltage
V
CBO
ОООООООО
ОООООООО
ОООООООО
1600
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Collector–Emitter Breakdown Voltage
V
CES
ОООООООО
ОООООООО
ОООООООО
1600
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Emitter–Base Voltage
V
EBO
ОООООООО
ОООООООО
ОООООООО
12
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Collector Current — Continuous
— Peak (1)
I
C
I
CM
ОООООООО
ОООООООО
ОООООООО
ОООООООО
3
8
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Adc
Base Current — Continuous
Base Current — Peak (1)
I
B
I
BM
ОООООООО
ОООООООО
ОООООООО
2
4
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Adc
*Total Device Dissipation @ TC = 25_C
*Derate above 25°C
P
D
ОООООООО
ОООООООО
ОООООООО
ОООООООО
100
0.8
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Watt
W/_C
Operating and Storage Temperature
TJ, T
stg
ОООООООО
ОООООООО
ОООООООО
–65 to 150
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
_
C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
R
θJC
R
θJA
ОООООООО
ОООООООО
ОООООООО
ОООООООО
1.25
62.5
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
_
C/W
Maximum Lead Temperature for Soldering Purposes:
1/8″ from case for 5 seconds
T
L
ОООООООО
ОООООООО
ОООООООО
ОООООООО
260
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE18604D2/D
Motorola, Inc. 1995
POWER TRANSISTORS
3 AMPERES
1600 VOLTS
100 WATTS
CASE 221A–06
TO–220AB
MJE18604D2
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH, RBE = 200 Ω)
V
CER(sus)
800
Vdc
Collector–Base Breakdown Voltage
(I
CBO
= 1 mA)
V
CBO
1600
Vdc
Emitter–Base Breakdown Voltage
(I
EBO
= 1 mA)
V
EBO
12
14
Vdc
Collector Cutoff Current
(V
CBO
= Rated V
CBO
, IB = 0)
I
CBO
100
µAdc
Collector Cutoff Current (VCE = Rated V
CES
, VEB = 0)
Collector Cutoff Current (VCE = 1300 V, VEB = 0)
@ TC = 25°C
@ TC = 125°C
@ TC = 125°C
I
CES
100
1000
100
µAdc
Emitter–Cutoff Current
(VEB = 11 Vdc, IC = 0)
I
EBO
500
µAdc
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 0.5 Adc, IB = 0.1 Adc)
@ TC = 25°C
@ TC = 125°C
0.8
0.6
1.1
1
(IC = 1 Adc, IB = 0.1 Adc)
@ TC = 25°C
@ TC = 125°C
0.8
1
1
(IC = 2 Adc, IB = 0.4 Adc)
@ TC = 25°C
@ TC = 125°C
0.9
0.8
1.2
1.1
Collector–Emitter Saturation Voltage
(IC = 250 mAdc, IB = 25 mAdc)
@ TC = 25°C
@ TC = 125°C
1
1.7
1.25
(IC = 0.5 Adc, IB = 50 mAdc)
@ TC = 25°C
@ TC = 125°C
2.1
4
2.4
(IC = 0.8 Adc, IB = 80 mAdc)
@ TC = 25°C
@ TC = 125°C
3.7
5
DC Current Gain
(IC = 0.4 Adc, VCE = 3 Vdc)
@ TC = 25°C
@ TC = 125°C
20
6
10
40
(IC = 5 mAdc, VCE = 10 Vdc)
@ TC = 25°C
@ TC = 125°C
20
20
35
55
DYNAMIC SATURATION VOLTAGE
@ 1 µs
@ TC = 25°C
@ TC = 125°C
4.7
9.3
Dynamic Saturation
Voltage:
Determined 1 µs and
IB1 = 50 mA
VCC = 300 V
@ 3 µs
@ TC = 25°C
@ TC = 125°C
2.6
5.4
µs and
3 µs respectively after
rising IB1 reaches
@ 1 µs
@ TC = 25°C
@ TC = 125°C
9.7
18
90% of final I
B1
IB1 = 50 mA
VCC = 300 V
@ 3 µs
@ TC = 25°C
@ TC = 125°C
6.4
12.3
DIODE CHARACTERISTICS
Forward Diode Voltage
(IEC = 0.4 Adc)
@ TC = 25°C
@ TC = 125°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
0.9
0.6
1.2
(IEC = 1 Adc)
@ TC = 25°C
@ TC = 125°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
1.05
0.7
1.5
Forward Recovery Time
(IF = 0.4 Adc, di/dt = 10 A/µs)
@ TC = 25°C
@ TC = 125°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
0.9
1.5
(IF = 1.0 Adc, di/dt = 10 A/µs)
@ TC = 25°C
@ TC = 125°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
1.15
1.6
IC = 0.3 Adc
IC = 0.5 Adc
V
BE(sat)
V
CE(sat)
h
FE
V
CE(dsat)
V
EC
t
fr
Vdc
Vdc
—
V
V
µs
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