Motorola MJE18002D2 Datasheet
1
Motorola Bipolar Power Transistor Device Data
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The MJE18002D2 use a newly developed technology, so called H2BIP*, to design
the state of art transistor dedicated to the Electronic Light Ballast and PFC** circuit.
The main advantages brought by these new transistors are:
• Improved Global Efficiency Due to the Low Base Drive Requirements
• DC Current Gain Typically Centered at 45
• Extremely Low Storage Time Variation, Thanks to the Antisaturation Network
• Easy to Use Thanks to the Integrated Collector/Emitter Diode
The MOTOROLA “ Sig S ixma” p hilosophy p rovides tight and r eproductible
parameter distribution.
*High speed High gain BIPolar transistor
**Power Factor Control
MAXIMUM RATINGS
Rating
Symbol
ОООООООО
ОООООООО
ОООООООО
Value
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Unit
Collector–Emitter Sustaining Voltage
V
CEO
ОООООООО
ОООООООО
ОООООООО
450
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Collector–Base Breakdown Voltage
V
CBO
ОООООООО
ОООООООО
ОООООООО
1000
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Collector–Emitter Breakdown Voltage
V
CES
ОООООООО
ОООООООО
ОООООООО
1000
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Emitter–Base Voltage
V
EBO
ОООООООО
ОООООООО
ОООООООО
12
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Collector Current — Continuous
— Peak (1)
I
C
I
CM
ОООООООО
ОООООООО
ОООООООО
2
5
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Adc
Base Current — Continuous
Base Current — Peak (1)
I
B
I
BM
ОООООООО
ОООООООО
ОООООООО
ОООООООО
1
2
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Adc
*Total Device Dissipation @ TC = 25_C
*Derate above 25°C
P
D
ОООООООО
ОООООООО
ОООООООО
ОООООООО
50
0.4
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Watt
W/_C
Operating and Storage Temperature
TJ, T
stg
ОООООООО
ОООООООО
ОООООООО
–65 to 150
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
_
C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
R
θJC
R
θJA
ОООООООО
ОООООООО
ОООООООО
ОООООООО
2.5
62.5
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
_
C/W
Maximum Lead Temperature for Soldering Purposes:
1/8″ from case for 5 seconds
T
L
ОООООООО
ОООООООО
ОООООООО
260
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE18002D2/D
Motorola, Inc. 1995
POWER TRANSISTORS
2 AMPERES
1000 VOLTS
50 WATTS
CASE 221A–06
TO–220AB
MJE18002D2
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
V
CEO(sus)
450
570
Vdc
Collector Cutoff Current
(VCE = Rated V
CEO
, IB = 0)
I
CEO
100
µAdc
Collector Cutoff Current (VCE = Rated V
CES
, VEB = 0)
Collector Cutoff Current (VCE = 500 V, VEB = 0)
@ TC = 25°C
@ TC = 125°C
@ TC = 125°C
I
CES
100
500
100
µAdc
Emitter–Cutoff Current
(VEB = 10 Vdc, IC = 0)
I
EBO
100
µAdc
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 0.4 Adc, IB = 40 mAdc)
(IC = 1 Adc, IB = 0.2 Adc)
@ TC = 25°C
@ TC = 25°C
V
BE(sat)
0.78
0.87
1
1.1
Vdc
Collector–Emitter Saturation Voltage
(IC = 0.4 Adc, IB = 40 mAdc)
@ TC = 25°C
@ TC = 125°C
0.36
0.5
0.6
1
(IC = 1 Adc, IB = 0.2 Adc)
@ TC = 25°C
@ TC = 125°C
0.4
0.65
0.75
1.2
DC Current Gain
(IC = 0.4 Adc, VCE = 1 Vdc)
@ TC = 25°C
@ TC = 125°C
14
8
25
15
(IC = 1 Adc, VCE = 1 Vdc)
@ TC = 25°C
@ TC = 125°C
6
4
10
6
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
f
T
13
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
C
ob
50
100
pF
Input Capacitance
(VEB = 8 Vdc)
C
ib
340
500
pF
DIODE CHARACTERISTICS
Forward Diode Voltage
(IEC = 1 Adc)
@ TC = 25°C
1.2
1.5
(IEC = 0.2 Adc)
@ TC = 25°C
@ TC = 125°C
0.9
0.6
1.2
(IEC = 0.4 Adc)
@ TC = 25°C
@ TC = 125°C
1
0.6
1.3
Forward Recovery Time
(IF = 0.2 Adc, di/dt = 10 A/µs)
@ TC = 25°C
540
(IF = 0.4 Adc, di/dt = 10 A/µs)
@ TC = 25°C
517
(IF = 1 Adc, di/dt = 10 A/µs)
@ TC = 25°C
480
V
CE(sat)
Vdc
h
FE
V
EC
t
fr
—
V
ns
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