Motorola MJE1320 Datasheet

1

Motorola Bipolar Power Transistor Device Data

  

   

Switchmode Series

This transistor is designed for high–voltage, power switching in inductive circuits
where RBSOA and breakdown voltage are critical. They are particularly suited for
line–operated switchmode applications.

Typical Applications:

• Fluorescent Lamp Ballasts

• Inverters

• Solenoid and Relay Drivers

• Motor Controls

• Deflection Circuits

Features:

• High V

CEV

Capability (1800 Volts)

• Low Saturation Voltage

• 100_C Performance Specified for:

Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

MAXIMUM RATINGS

Rating

Symbol

ОООООООО

ОООООООО

ОООООООО

Value

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Unit

Collector–Emitter Voltage

V

CEO(sus)

ОООООООО

ОООООООО

ОООООООО

900

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector–Emitter Voltage

V

CEV

ОООООООО

ОООООООО

ОООООООО

1800

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Emitter Base Voltage

V

EB

ОООООООО

ОООООООО

ОООООООО

9

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector Current — Continuous

Peak(1)

I

C

I

CM

ОООООООО

ОООООООО

ОООООООО

2
5

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Adc

Base Current — Continuous

Peak(1)

I

B

I

BM

ОООООООО

ОООООООО

ОООООООО

ОООООООО

1.5

2.5

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Adc

Total Power Dissipation @ TC = 25_C

@ TC = 100_C

Derate above 25_C

P

D

ОООООООО

ОООООООО

ОООООООО

ОООООООО

80
32

0.64

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Watts

W/_C

Operating and Storage Junction Temperature Range

TJ, T

stg

ОООООООО

ОООООООО

ОООООООО

–65 to +150

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

ОООООООО

ОООООООО

ОООООООО

Max

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Unit

Thermal Resistance, Junction to Case

R

θJC

ОООООООО

ОООООООО

ОООООООО

1.56

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C/W

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

T

L

ОООООООО

ОООООООО

ОООООООО

275

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

SWITCHMODE is a trademark of Motorola, Inc.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE1320/D

 Motorola, Inc. 1995



POWER TRANSISTOR

2 AMPERES

900 VOLTS

80 WATTS

CASE 221A–06

TO–220AB

MJE1320

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

ÎÎÎ

ÎÎÎ

ÎÎÎ

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(IC = 50 mA, IB = 0)

V

CEO(sus)

900

—

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Collector Cutoff Current

(V

CEV

= Rated Value, V

BE(off)

= 1.5 Vdc)

(V

CEV

= Rated Value, V

BE(off)

= 1.5 Vdc, TC = 100_C)

I

CEV

—
—

—
—

0.25

2.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

Emitter Cutoff Current

(VEB = 9 Vdc, IC = 0)

I

EBO

—

—

0.25

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased

I

S/b

See Figure 13

Clamped Inductive SOA with Base Reverse Biased

RBSOA

See Figure 14

ON CHARACTERISTICS

(1)

DC Current Gain (VCE = 5 Vdc) IC = 2 Adc

IC = 1 Adc

h

FE

2.5
3

4.5
7

—
—

ÎÎÎ

ÎÎÎ

ÎÎÎ

—
—

Collector–Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.5 Adc)
(IC = 2 Adc, IB = 1 Adc)
(IC = 1 Adc, IB = 0.5 Adc, TC = 100_C)

V

CE(sat)

—
—
—

0.18

0.3

0.3

1

2.5

1.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Base–Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.5 Adc)
(IC = 2 Adc, IB = 1 Adc)
(IC = 1 Adc, IB = 0.5 Adc, TC = 100_C)

V

BE(sat)

—
—
—

0.2

0.9

0.15

1.5

2.8

1.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 10 Vdc, IE = 0, f

test

= 1 MHz)

C

ob

—

80

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

pF

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

t

d

—

0.1

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

Rise Time

t

r

—

0.8

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

Storage Time

IB1 = IB2 = 0.5 Adc
tp = 25 µs, Duty Cycle v 2%

t

s

—

4

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

Fall Time

p

= 25 µs, Duty Cycle v 2%

t

f

—

0.8

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

Inductive Load, Clamped (Table 2)

Storage Time

t

sv

—

2.8

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

Crossover Time

TC = 25_C

t

c

—

2.2

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

Storage Time

IC = 1 A, V

clamp

= 400 Vdc,

V

= 2 Vdc, I

= 0.5 Adc

t

sv

—

3.7

10.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

Crossover Time

V

BE(off)

= 2 Vdc, IB1 = 0.5 Adc

_

C

t

c

—

3.5

10

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

Fall Time

_

C

ÎÎÎ

ÎÎÎ

ÎÎÎ

(1) Pulse Test: Pulse Width = 300 µs. Duty Cycle v 2%.

VCC = 250 Vdc, IC = 1 A

TC = 100

MJE1320

3

Motorola Bipolar Power Transistor Device Data

C, CAPACITANCE (pF)

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)V

BE

, BASE–EMITTER VOLTAGE (VOLTS)

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.05
IC, COLLECTOR CURRENT (AMPS)

0.2 0.5 3

5

2

100

h

FE

, DC CURRENT GAIN

VCE = 5 V

TC = 100°C

20

0.3 1

25°C

3

0.1

0.7 2 5

Figure 1. DC Current Gain

70
50

30

10

7

1

2.5 A

Figure 2. Collector Saturation Region

IB, BASE CURRENT (AMP)

1.2

0.4
0

0.1

2

0.8

TJ = 25°C

1.6

IC = 1 A

2 A

105210.70.50.30.2

IC, COLLECTOR CURRENT (AMPS)

1.3

0.9

2

IC, COLLECTOR CURRENT (AMPS)

1.6

1.2

0.4

0

0.3

Figure 3. Collector–Emitter Saturation Voltage

0.25 0.3 0.4 2.51 1.50.5

Figure 4. Base–Emitter Saturation Voltage

IC/IB = 2

1.1

0.7

0.7

0.5

TJ = 100°C

0.8

2

Figure 5. Collector Cutoff Region

10K

VBE, BASE–EMITTER VOLTAGE (VOLTS)

0.1
0–0.4

Figure 6. Capacitance Variation

10K

VR, REVERSE VOLTAGE (VOLTS)

C

ib

0.2

, COLLECTOR CURRENT ( A)

µ

I

C

1K

100

10

1

–0.2 +0.2 +0.4 +0.6

75°C

REVERSE FORWARD

25°C

VCE = 250 V

5K

2K
1K

500

200
100

50

20
10

0.3 0.5 1 2 5 10 20 50 100 500 2K

300

3K

30

200

0.07

2.4

2.8

7

100°C

0.25 0.3 0.4 2.51 1.50.5 0.7 2

30

3

1K

f = 1 MHz
TJ = 25

°

C

25°C

TJ = 25°C

IC/IB = 2

TJ = 150°C

125°C
100°C

C

ob

TYPICAL STATIC CHARACTERISTICS