Motorola MJE13009 Datasheet

3–676

Motorola Bipolar Power Transistor Device Data

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  !  

The MJE13009 is designed for high–voltage, high–speed power switching inductive
circuits where fall time is critical. They are particularly suited for 115 and 220 V
switchmode applications such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
SPECIFICATION FEATURES:

• V

CEO(sus)

400 V and 300 V

• Reverse Bias SOA with Inductive Loads @ TC = 100_C

• Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C

. . . tc @ 8 A, 100_C is 120 ns (Typ).

• 700 V Blocking Capability

• SOA and Switching Applications Information.

MAXIMUM RATINGS

Rating

Symbol

ОООООООО

ОООООООО

ОООООООО

Value

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Unit

Collector–Emitter Voltage

V

CEO(sus)

ОООООООО

ОООООООО

ОООООООО

400

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector–Emitter Voltage

V

CEV

ОООООООО

ОООООООО

ОООООООО

700

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Emitter Base Voltage

V

EBO

ОООООООО

ОООООООО

ОООООООО

9

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector Current — Continuous

— Peak (1)

I

C

I

CM

ОООООООО

ОООООООО

ОООООООО

12
24

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Adc

Base Current — Continuous

— Peak (1)

I

B

I

BM

ОООООООО

ОООООООО

ОООООООО

ОООООООО

6

12

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Adc

Emitter Current — Continuous

— Peak (1)

I

E

I

EM

ОООООООО

ОООООООО

ОООООООО

ОООООООО

18
36

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Adc

Total Power Dissipation @ TA = 25_C

Derate above 25_C

P

D

ОООООООО

ОООООООО

ОООООООО

2

16

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Watts

mW/_C

Total Power Dissipation @ TC = 25_C

Derate above 25_C

P

D

ОООООООО

ОООООООО

ОООООООО

ОООООООО

100
800

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Watts

mW/_C

Operating and Storage Junction Temperature Range

TJ, T

stg

ОООООООО

ОООООООО

ОООООООО

–65 to +150

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

ОООООООО

ОООООООО

ОООООООО

Max

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Unit

Thermal Resistance, Junction to Ambient

R

θJA

ОООООООО

ОООООООО

ОООООООО

62.5

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C/W

Thermal Resistance, Junction to Case

R

θJC

ОООООООО

ОООООООО

ОООООООО

1.25

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C/W

Maximum Lead Temperature for Soldering Purposes:

1/8″ from Case for 5 Seconds

T

L

ОООООООО

ОООООООО

ОООООООО

ОООООООО

275

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE13009/D

 Motorola, Inc. 1995



12 AMPERE

NPN SILICON

POWER TRANSISTOR

400 VOLTS

100 WATTS

*Motorola Preferred Device



CASE 221A–06

TO–220AB

REV 2

MJE13009

3–677

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

ÎÎÎ

ÎÎÎ

ÎÎÎ

Unit

*OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(IC = 10 mA, IB = 0)

V

CEO(sus)

400

—

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Collector Cutoff Current

(V

CEV

= Rated Value, V

BE(off)

= 1.5 Vdc)

(V

CEV

= Rated Value, V

BE(off)

= 1.5 Vdc, TC = 100_C)

I

CEV

—
—

—
—

1
5

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

Emitter Cutoff Current

(VEB = 9 Vdc, IC = 0)

I

EBO

—

—

1

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

SECOND BREAKDOWN

S/b

—

*ON CHARACTERISTICS

DC Current Gain

(IC = 5 Adc, VCE = 5 Vdc)
(IC = 8 Adc, VCE = 5 Vdc)

h

FE

8
6

—
—

40
30

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 5 Adc, IB = 1 Adc)
(IC = 8 Adc, IB = 1.6 Adc)
(IC = 12 Adc, IB = 3 Adc)
(IC = 8 Adc, IB = 1.6 Adc, TC = 100_C)

V

CE(sat)

—
—
—
—

—
—
—
—

1

1.5
3
2

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Base–Emitter Saturation Voltage

(IC = 5 Adc, IB = 1 Adc)
(IC = 8 Adc, IB = 1.6 Adc)
(IC = 8 Adc, IB = 1.6 Adc, TC = 100_C)

V

BE(sat)

—
—
—

—
—
—

1.2

1.6

1.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 500 mAdc, VCE = 10 Vdc, f = 1 MHz)

f

T

4

—

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

C

ob

—

180

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

pF

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

t

d

—

0.06

0.1

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

Rise Time

t

r

—

0.45

1

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

Storage Time

IB1 = IB2 = 1.6 A, tp = 25 µs,
Duty Cycle v 1%)

t

s

—

1.3

3

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

Fall Time

v

1%)

t

f

—

0.2

0.7

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

Inductive Load, Clamped (Table 1, Figure 13)

Voltage Storage Time

C

= 8 A, V

clamp

= 300 Vdc,

t

sv

—

0.92

2.3

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

Crossover Time

(IC = 8 A, V

clamp

= 300 Vdc,

IB1 = 1.6 A, V

BE(off)

= 5 Vdc, TC = 100_C)

t

c

—

0.12

0.7

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

*Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.

Second Breakdown Collector Current with base forward biased
Clamped Inductive SOA with Base Reverse Biased

(VCC = 125 Vdc, IC = 8 A,

(I

I

S/b

See Figure 1
See Figure 2

MJE13009

3–678

Motorola Bipolar Power Transistor Device Data

I

C

, COLLECTOR CURRENT (AMP)

10µs

100µs

1 ms

dc

100

7

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.02
10

20
10

50

0.5

0.1

0.05

30 50 70 100

Figure 1. Forward Bias Safe Operating Area

Figure 2. Reverse Bias Switching Safe

Operating Area

0.2

0.01

300 5005 20

14

0

800

2

100 300

TC ≤ 100°C
IB1 = 2.5 A

500 700

V

BE(off)

= 9 V

0

6

V

CEV

, COLLECTOR–EMITTER CLAMP VOLTAGE (VOLTS)

10

200 400 600

5 V

2
1

5

TC = 25°C

12

8

4

3 V

1.5 V

I

C

, COLLECTOR (AMP)

200

THERMAL LIMIT
BONDING WIRE LIMIT
SECOND BREAKDOWN LIMIT

CURVES APPLY BELOW RATED V

CEO

The Safe Operating Area figures shown in Figures 1 and 2 are specified ratings for these devices under the test conditions shown.

Figure 3. Forward Bias Power Derating

TC, CASE TEMPERATURE (°C)

0

40 120 160

0.6

POWER DERATING FACTOR

SECOND BREAKDOWN

DERATING

1

0.8

0.4

0.2

60 100 14080

THERMAL

DERATING

20

There are two limitations on the power handling ability of a
transistor: average junction temperature and second break­down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa­tion than the curves indicate.

The data of Figure 1 is based on TC = 25_C; T

J(pk)

is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not der­ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 1 may be found at any case tem­perature by using the appropriate curve on Figure 3.

T

J(pk)

may be calculated from the data in Figure 4. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations im­posed by second breakdown. Use of reverse biased safe op­erating area data (Figure 2) is discussed in the applications
information section.

t, TIME (ms)

1

0.01

0.01

0.7

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

0.05 1 2 5 10 20 50 100 200 500

Z

θ

JC(t)

= r(t) R

θ

JC

R

θ

JC

= 1.25

°

C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t

1

T

J(pk)

– TC = P

(pk)

Z

θ

JC(t)

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

D = 0.5

0.02

SINGLE PULSE

0.1

0.1 0.50.2 1.0 k

0.5

0.3

0.07

0.03

0.02

Figure 4. Typical Thermal Response [Z

θJC

(t)]

0.01

0.05

0.2