Motorola MJE13005 Datasheet

1

Motorola Bipolar Power Transistor Device Data

  

 
  !  

These devices are designed for high–voltage, high–speed power switching
inductive circuits where fall time is critical. They are particularly suited for 115 and
220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor
Controls, Solenoid/Relay drivers and Deflection circuits.
SPECIFICATION FEATURES:

• V

CEO(sus)

400 V

• Reverse Bias SOA with Inductive Loads @ TC = 100_C

• Inductive Switching Matrix 2 to 4 Amp, 25 and 100_C

. . . tc @ 3A, 100_C is 180 ns (Typ)

• 700 V Blocking Capability

• SOA and Switching Applications Information.

MAXIMUM RATINGS

Rating

Symbol

ОООООООО

ОООООООО

ОООООООО

Value

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Unit

Collector–Emitter Voltage

V

CEO(sus)

ОООООООО

ОООООООО

ОООООООО

400

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector–Emitter Voltage

V

CEV

ОООООООО

ОООООООО

ОООООООО

700

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Emitter Base Voltage

V

EBO

ОООООООО

ОООООООО

ОООООООО

9

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector Current — Continuous

— Peak (1)

I

C

I

CM

ОООООООО

ОООООООО

ОООООООО

4
8

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Adc

Base Current — Continuous

— Peak (1)

I

B

I

BM

ОООООООО

ОООООООО

ОООООООО

ОООООООО

2
4

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Adc

Emitter Current — Continuous

— Peak (1)

I

E

I

EM

ОООООООО

ОООООООО

ОООООООО

ОООООООО

6

12

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Adc

Total Power Dissipation @ TA = 25_C

Derate above 25_C

P

D

ОООООООО

ОООООООО

ОООООООО

2

16

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Watts

mW/_C

Total Power Dissipation @ TC = 25_C

Derate above 25_C

P

D

ОООООООО

ОООООООО

ОООООООО

ОООООООО

75

600

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Watts

mW/_C

Operating and Storage Junction Temperature Range

TJ, T

stg

ОООООООО

ОООООООО

ОООООООО

–65 to +150

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

ОООООООО

ОООООООО

ОООООООО

Max

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Unit

Thermal Resistance, Junction to Ambient

R

θJA

ОООООООО

ОООООООО

ОООООООО

62.5

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C/W

Thermal Resistance, Junction to Case

R

θJC

ОООООООО

ОООООООО

ОООООООО

1.67

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C/W

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

T

L

ОООООООО

ОООООООО

ОООООООО

ОООООООО

275

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE13005/D

 Motorola, Inc. 1995



4 AMPERE

NPN SILICON

POWER TRANSISTOR

400 VOLTS

75 WATTS

*Motorola Preferred Device



CASE 221A–06

TO–220AB

REV 3

MJE13005

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

ÎÎÎ

ÎÎÎ

ÎÎÎ

Unit

*OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(IC = 10 mA, IB = 0)

V

CEO(sus)

400

—

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Collector Cutoff Current

(V

CEV

= Rated Value, V

BE(off)

= 1.5 Vdc)

(V

CEV

= Rated Value, V

BE(off)

= 1.5 Vdc, TC = 100_C)

I

CEV

—
—

—
—

1
5

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

Emitter Cutoff Current

(VEB = 9 Vdc, IC = 0)

I

EBO

—

—

1

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased

I

S/b

See Figure 11

Clamped Inductive SOA with Base Reverse Biased

RBSOA

See Figure 12

*ON CHARACTERISTICS

DC Current Gain

(IC = 1 Adc, VCE = 5 Vdc)
(IC = 2 Adc, VCE = 5 Vdc)

h

FE

10

8

—
—

60
40

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

—

Collector–Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.2 Adc)
(IC = 2 Adc, IB = 0.5 Adc)
(IC = 4 Adc, IB = 1 Adc)
(IC = 2 Adc, IB = 0.5 Adc, TC = 100_C)

V

CE(sat)

—
—
—
—

—
—
—
—

0.5

0.6
1
1

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Base–Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.2 Adc)
(IC = 2 Adc, IB = 0.5 Adc)
(IC = 2 Adc, IB = 0.5 Adc, TC = 100_C)

V

BE(sat)

—
—
—

—
—
—

1.2

1.6

1.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 500 mAdc, VCE = 10 Vdc, f = 1 MHz)

f

T

4

—

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

C

ob

—

65

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

pF

SWITCHING CHARACTERISTICS

Resistive Load (Table 2)

Delay Time

t

d

—

0.025

0.1

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

Rise Time

t

r

—

0.3

0.7

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

Storage Time

IB1 = IB2 = 0.4 A, tp = 25 µs,
Duty Cycle v 1%)

t

s

—

1.7

4

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

Fall Time

v

1%)

t

f

—

0.4

0.9

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

Inductive Load, Clamped (Table 2, Figure 13)

Voltage Storage Time

t

sv

—

0.9

4

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

Crossover Time

(IC = 2 A, V

clamp

= 300 Vdc,

I

= 0.4 A, V

= 5 Vdc, T

= 100_C)

t

c

—

0.32

0.9

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

Fall Time

IB1 = 0.4 A, V

BE(off)

= 5 Vdc, TC = 100_C)

t

fi

—

0.16

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

*Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.

(VCC = 125 Vdc, IC = 2 A,

MJE13005

3

Motorola Bipolar Power Transistor Device Data

C, CAPACITANCE (pF)

V

CE(sat)

, COLLECTOR–EMITTER SATURATION

VOLTAGE (VOLTS)

V

BE

, BASE–EMITTER VOLTAGE (VOLTS)

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (AMP)IC, COLLECTOR CURRENT (AMP)

1.1

1.3

0.7

0.3

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.1 0.4 2 4

10

Figure 2. Collector Saturation Region

0.03
IB, BASE CURRENT (AMP)

0.30.05

1.2

0.4

0

100

h

FE

, DC CURRENT GAIN

0.1 0.2 0.5 3

Figure 3. Base–Emitter Voltage Figure 4. Collector–Emitter Saturation Voltage

Figure 5. Collector Cutoff Region

2

0.8

0.1
VBE, BASE–EMITTER VOLTAGE (VOLTS)

0

TJ = 25°C

0.2 1

Figure 6. Capacitance

2 k

VR, REVERSE VOLTAGE (VOLTS)

C

ib

C

ob

0.3

, COLLECTOR CURRENT ( A)

µ

I

C

–0.4 –0.2

70
50

300

1.6

0.5

IC = 1 A

TJ = –55°C

5

0.04

0.6

0.06 0.1 10.04 0.40.2 0.6

70
50

30

7

300
200

100

20

30

10050510.5

150°C

IC/IB = 4

+0.6

2 A

0.7 1 2

0.9 0.35

0.55

0.25

0.05

0.45

0.06

VCE = 2 V
VCE = 5 V

TJ = 150°C

25°C

–55°C

2

0.15

+0.4+0.2

1

10

100

1 k

10 k

500

700

1 k

10 30

REVERSE FORWARD

VCE = 250 V

V

BE(sat)

@ IC/IB = 4

V

BE(on)

@ VCE = 2 V

20

3 A 4 A

4

25°C

25°C

0.06 0.1 10.04 0.40.2 0.6 2 4

3

TJ = –55°C

25°C

150°C

TJ = 150°C

125°C

100°C
75°C

50°C

25°C