Motorola MJE1123 Datasheet
1
Motorola Bipolar Power Transistor Device Data
The MJE1123 is an applications specific device designed to provide low–dropout
linear regulation for switching–regulator post regulators, battery powered systems
and other applications. The MJE1123 is fully specified in the saturation region and
exhibits the following main features:
• High Gain Limits Base–Drive Losses to only 1–2% of Circuit Output Current
• Gain is 100 Minimum at IC = 1.0 Amp, VCE = 7.0 Volts
• Excellent Saturation Voltage Characteristic, 0.2 Volts Maximum at 1.0 Amp
MAXIMUM RATINGS
(TC = 25°C Unless Otherwise Noted.)
Rating
Symbol Value Unit
Collector–Emitter Sustaining Voltage V
CEO
40 Vdc
Collector–Base Voltage V
CB
50 Vdc
Emitter–Base Voltage V
EB
5.0 Vdc
Collector Current — Continuous
Collector Current — Peak
I
C
I
CM
4.0
8.0
Adc
Base Current — Continuous I
B
4.0 Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
P
D
75
0.6
Watts
W/°C
Operating and Storage Temperature TJ, T
stg
– 65 to +150 °C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case°
Thermal Resistance — Junction to Ambient°
R
θJC
R
θJA
°1.67°
°70°
°C/W
Maximum Lead Temperature for Soldering Purposes:
1/8″ from Case for 5 seconds
T
L
275 °C
ELECTRICAL CHARACTERISTICS (T
C
= 25°C Unless Otherwise Noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS*
Collector–Emitter Sustaining Voltage (IC = 1.0 mA, I = 0) V
CEO(sus)
40 65 — Vdc
Emitter–Base Voltage (IE = 100 µA) V
EBO
7.0 11 — Vdc
Collector Cutoff Current
(VCE = 7.0 Vdc, IB = 0)
(VCE = 20 Vdc, IB = 0)
I
CEO
—
—
—
—
100
250
µAdc
ON CHARACTERISTICS*
Collector–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 20 mAdc)
(IC = 1.0 Adc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 120 mAdc)
(IC = 2.0 Adc, IB = 50 mAdc)
(IC = 2.0 Adc, IB = 120 mAdc)
(IC = 4.0 Adc, IB = 120 mAdc)
V
CE(sat)
—
—
—
—
—
—
0.16
0.13
0.10
0.25
0.20
0.45
0.30
0.25
0.20
0.40
0.35
0.75
Vdc
* Indicates Pulse Test: Pulse Width = 300 µs max, Duty Cycle = 2%. (continued)
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE1123/D
Motorola, Inc. 1995
PNP LOW DROPOUT
TRANSISTOR
4.0 AMPERES
40 VOLTS
CASE 221A–06
TO–220AB
MJE1123
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued
(TC = 25°C Unless Otherwise Noted)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS* (continued)
Base–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 20 mAdc)
(IC = 2.0 Adc, IB = 50 mAdc)
(IC = 4.0 Adc, IB = 120 mAdc)
V
BE(sat)
—
—
—
0.77
0.87
1.00
0.95
1.20
1.40
Vdc
DC Current Gain
(IC = 1.0 Adc, VCE = 7.0 Vdc)
(IC = 1.0 Adc, VCE = 10 Vdc)
(IC = 2.0 Adc, VCE = 7.0 Vdc)
(IC = 2.0 Adc, VCE = 10 Vdc)
(IC = 4.0 Adc, VCE = 7.0 Vdc)
(IC = 4.0 Adc, VCE = 10 Vdc)
h
FE
100
100
75
80
45
45
170
180
120
140
75
79
225
225
170
180
100
100
—
Base–Emitter On Voltage
(IC = 1.0 Adc, VCE = 1.0 Vdc)
(IC = 2.0 Adc, VCE = 1.0 Vdc)
(IC = 4.0 Adc, VCE = 1.0 Vdc)
V
BE(on)
—
—
—
0.75
0.84
0.90
0.90
1.00
1.20
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
f
T
5.0 11.5 — MHz
* Indicates Pulse Test: Pulse Width = 300 µs max, Duty Cycle = 2%.
0.1 1 10
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Saturation Voltage versus Collector
Current as a Function of Base Drive
V
20 40 60 80 100
TJ, CASE TEMPERATURE (°C)
Figure 2. Saturation Voltage
versus Temperature
0.1 1
10
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Base–Emitter Saturation Voltage
V
BE(sat)
, BASE–EMITTER
SATURATION VOLTAGE (VOLTS)
20 40 60 80 100
TJ, CASE TEMPERATURE (
°
C)
Figure 4. Base–Emitter Saturation Voltage
versus Temperature
V
BE(S)
, BASE–EMITTER
SATURATION VOLTAGE (VOLTS)
CE(sat)
, COLLECTOR–EMITTER
SATURATION VOLTAGE (VOLTS)
V
CE(sat)
, COLLECTOR–EMITTER
SATURATION VOLTAGE (VOLTS)
100
10
1
0.1
1
0.8
0.6
0.4
0.2
0
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.1
1
0.9
0.8
0.7
0.6
TJ = 25°C
TJ = 25°C
IB = 20 mA
50 mA
100 mA
120 mA
IC = 4 A, IB = 100 mA
IC = 2 A, IB = 50 mA
IC = 1 A, IB = 20 mA
IB = 20 mA
50 mA
120 mA
IC = 4 A, IB = 100 mA
IC = 2 A, IB = 50 mA
IC = 1 A, IB = 20 mA
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