SEMICONDUCTOR TECHNICAL DATA
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by MJD44E3/D
DPAK For Surface Mount Application
. . . for general purpose power and switching output or driver stages in applications
such as switching regulators, converters, and power amplifiers.
• Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)
• Straight Lead Version in Plastic Sleeves (“–1” Suffix)
• Lead Formed Version in 16 mm Tape and Reel for Surface Mount (“T4” Suffix)
• Electrically Similar to Popular D44E3 Device
• High DC Gain — 1000 Min @ 5.0 Adc
• Low Sat. Voltage — 1.5 V @ 5.0 Adc
• Compatible With Existing Automatic Pick & Place Equipment
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Power Dissipation
ООООООООООО
@ TC = 25_C
Derate above 25_C
ООООООООООО
Total Power Dissipation (1)
@ TA = 25_C
ООООООООООО
Derate above 25_C
Operating and Storage Junction
ООООООООООО
T emperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (1)
Lead T emperature for Soldering
(1) These ratings are applicable when surface mounted on the minimum pad size recommended.
Symbol
V
CEO
V
EB
I
C
P
D
ÎÎÎ
ÎÎÎ
P
D
ÎÎÎ
TJ, T
stg
ÎÎÎ
Symbol
R
θJC
R
θJA
T
L
Value
80
7
10
ÎÎÎÎ
20
0.16
ÎÎÎÎ
1.75
ÎÎÎÎ
0.014
–55 to +150
ÎÎÎÎ
Max
6.25
71.4
260
Unit
Vdc
Vdc
Adc
Î
Watts
W/_C
Î
Watts
Î
W/_C
_
C
Î
Unit
_
C/W
_
C/W
_
C
*Motorola Preferred Device
NPN DARLINGTON
SILICON
POWER TRANSISTOR
10 AMPERES
80 VOLTS
20 WATTS
CASE 369–07
CASE 369A–13
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0.190
4.826
0.165
1.8
0.07
4.191
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1997
Motorola Bipolar Power Device Data
0.243
6.172
1.6
0.063
3.0
0.118
inches
mm
1
MJD44E3
ELECTRICAL CHARACTERISTICS (T
= 25_C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
ОООООООООООООООООО
(VCE = Rated V
Emitter Cutoff Current
ОООООООООООООООООО
(VEB = 7 Vdc)
CEO
, VBE = 0)
ON CHARACTERISTICS
Collector–Emitter Saturation Voltage
ОООООООООООООООООО
(IC = 5 Adc, IB = 10 mAdc)
(IC = 10 Adc, IB = 20 mAdc)
ОООООООООООООООООО
Base–Emitter Saturation Voltage
(IC = 5 Adc, IB = 10 mAdc)
ОООООООООООООООООО
DC Current Gain
ОООООООООООООООООО
(VCE = 5 Vdc, IC = 5 Adc)
DYNAMIC CHARACTERISTICS
Collector Capacitance
ОООООООООООООООООО
(VCB = 10 Vdc, f
= 1 MHz)
test
SWITCHING TIMES
Delay and Rise Times
ОООООООООООООООООО
(IC = 10 Adc, IB1 = 20 mAdc)
Symbol
I
CES
ÎÎ
I
EBO
ÎÎ
V
CE(sat)
ÎÎ
ÎÎ
V
BE(sat)
ÎÎ
h
FE
ÎÎ
C
cb
ÎÎ
td + t
ÎÎ
Min
—
ÎÎ
—
ÎÎ
ÎÎ
—
—
ÎÎ
ÎΗÎΗÎÎ
1000
ÎÎ
—
ÎÎ
r
—
ÎÎ
Typ
—
ÎÎ
—
ÎÎ
ÎÎ
—
—
ÎÎ
—
ÎÎ
—
ÎÎ
0.6
ÎÎ
Max
10
ÎÎ
1
ÎÎ
ÎÎ
1.5
2
ÎÎ
2.5
—
ÎÎ
130
ÎÎ
—
ÎÎ
Unit
µA
ÎÎ
µA
ÎÎ
Vdc
ÎÎ
ÎÎ
Vdc
ÎÎ
—
ÎÎ
pF
ÎÎ
µs
ÎÎ
Storage Time
(IC = 10 Adc, IB1 = IB2 = 20 mAdc)
ОООООООООООООООООО
Fall Time
(IC = 10 Adc, IB1 = IB2 = 20 mAdc)
ОООООООООООООООООО
TAT
10
2.5
100 µs
5
3
1 ms
2
5 ms
2
1.5
1
, POWER DISSIPATION (WATTS)
0.5
D
P
1
0
0.5
0.3
, COLLECTOR CURRENT (AMPS)
C
I
0.2
0.1
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
TC = 25°C SINGLE PULSE
3 5 10 20 100
502301
VCE, COLLECTOR–EMITTER VOL TAGE (VOLTS)
Figure 1. Maximum Forward Bias
Safe Operating Area
25
20
15
10
C
5
0
25
t
s
ÎÎ
t
f
ÎÎ
ÎÎ
ÎÎ
T
C
T
SURFACE
—
—
A
2
ÎÎ
0.5
ÎÎ
—
ÎÎ
—
ÎÎ
µs
ÎÎ
µs
ÎÎ
MOUNT
50 75 100 125 150
°
T, TEMPERATURE (
C)
Figure 2. Power Derating
2 Motorola Bipolar Power Device Data