Motorola MJ802 Datasheet

1

Motorola Bipolar Power Transistor Device Data

  


. . . for use as an output device in complementary audio amplifiers to 100–Watts
music power per channel.

• High DC Current Gain — hFE = 25–100 @ IC = 7.5 A

• Excellent Safe Operating Area

• Complement to the PNP MJ4502

MAXIMUM RATINGS

Rating

Symbol

ОООООООО

ОООООООО

ОООООООО

Value

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Unit

Collector–Emitter Voltage

V

CER

ОООООООО

ОООООООО

ОООООООО

100

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector–Base Voltage

V

CB

ОООООООО

ОООООООО

ОООООООО

100

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector–Emitter Voltage

V

CEO

ОООООООО

ОООООООО

ОООООООО

90

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Emitter–Base Voltage

V

EB

ОООООООО

ОООООООО

ОООООООО

4.0

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector Current

I

C

ОООООООО

ОООООООО

ОООООООО

30

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Adc

Base Current

I

B

ОООООООО

ОООООООО

ОООООООО

7.5

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Adc

Total Device Dissipation @ TC = 25°C

Derate above 25_C

P

D

ОООООООО

ОООООООО

ОООООООО

ОООООООО

200

1.14

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Watts
W/_C

Operating and Storage Junction Temperature Range

TJ, T

stg

ОООООООО

ОООООООО

ОООООООО

–65 to +200

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

ОООООООО

ОООООООО

ОООООООО

Max

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Unit

Thermal Resistance, Junction to Case

θ

JC

ОООООООО

ОООООООО

ОООООООО

0.875

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C/W

200

150

100

50

0

40 60 120 140 200

Figure 1. Power–Temperature Derating Curve

TC, CASE TEMPERATURE (°C)

0 20 80 100

160

180

P

D

, POWER DISSIPATION (WATTS)



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJ802/D

 Motorola, Inc. 1995



30 AMPERE

POWER TRANSISTOR

NPN SILICON

100 VOLTS

200 WATTS

CASE 1–07

TO–204AA

(TO–3)

REV 7

MJ802

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted)

Characteristic

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Symbol

Min

Max

ÎÎÎ

ÎÎÎ

ÎÎÎ

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(1)

(I

C

= 200 mAdc, RBE = 100 Ohms)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

BV

CER

100

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Collector–Emitter Sustaining Voltage

(1)

(I

C

= 200 mAdc)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

V

CEO(sus)

90

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Collector–Base Cutoff Current

(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TC = 150_C)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

I

CBO

—
—

1.0

5.0

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

Emitter–Base Cutoff Current (VBE = 4.0 Vdc, IC = 0)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

I

EBO

—

1.0

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

ON CHARACTERISTICS

(1)

DC Current Gain

(1)

(I

C

= 7.5 Adc, VCE = 2.0 Vdc)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

h

FE

25

100

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

—

Base–Emitter “On” Voltage (IC = 7.5 Adc, VCE = 2.0 Vdc)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

V

BE(on)

—

1.3

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Collector–Emitter Saturation Voltage (IC = 7.5 Adc, IB = 0.75 Adc)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

V

CE(sat)

—

0.8

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Base–Emitter Saturation Voltage (IC = 7.5 Adc, IB = 0.75 Adc)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

V

BE(sat)

—

1.3

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Current Gain — Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

f

T

2.0

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

MHz

(1)

Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.

h

FE

, NORMALIZED CURRENT GAIN

IC, COLLECTOR CURRENT (AMP)

TJ = 175° C

3.0

IC, COLLECTOR CURRENT (AMP)

1.0

2.0

0.7

1.0

0.5

0.1

Figure 2. DC Current Gain

Figure 3. ‘‘On” Voltages

V

BE(sat)

@ IC/IB = 10

VCE = 2.0 V

25°C

– 55°C

TJ = 25°C

0.03 0.1 0.2 0.3 0.5 10 20 30

“ON” VOLTAGE (VOLTS)

0.3

0.2

0.05 2.0 3.0 5.0

DATA SHOWN IS OBTAINED FROM PULSE TESTS
AND ADJUSTED TO NULLIFY EFFECT OF I

CBO

.

2.0

1.8

1.4

1.6

1.2

0

1.0

0.8

0.6

0.4

0.2

1.00.03 0.1 0.2 0.3 0.5 10 20 300.05 2.0 3.0 5.0

VBE @ VCE = 2.0 V

V

CE(sat)

@ IC/IB = 10

I

C

, COLLECTOR CURRENT (AMP)

50

1.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0 20

10

1.0

0.2

10

Figure 4. Active Region Safe Operating Area

100

5.0

2.0

0.5

0.1

20

2.0 3.0 1005030

SECONDARY BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATIONS TC = 25°C
PULSE DUTY CYCLE

≤

10%

TJ = 200° C

100

µ

s

1.0 ms

5.0 ms

dc

The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To insure operation below the maximum TJ, power tempera­ture derating must be observed for both steady state and
pulse power conditions.