Motorola MJ802 Datasheet

Motorola Bipolar Power Transistor Device Data

   

. . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel.

• High DC Current Gain — hFE = 25–100 @ IC = 7.5 A

• Excellent Safe Operating Area

• Complement to the PNP MJ4502

MAXIMUM RATINGS

Rating

Symbol

ОООООООО

Value

ÎÎÎÎ

Unit

Collector–Emitter Voltage

CER

ОООООООО

100

ÎÎÎÎ

Vdc

Collector–Base Voltage

ОООООООО

100

ÎÎÎÎ

Vdc

Collector–Emitter Voltage

CEO

ОООООООО

ÎÎÎÎ

Vdc

Emitter–Base Voltage

ОООООООО

4.0

ÎÎÎÎ

Vdc

Collector Current

ОООООООО

ÎÎÎÎ

Adc

Base Current

ОООООООО

7.5

ÎÎÎÎ

Adc

Total Device Dissipation @ TC = 25°C

Derate above 25_C

ОООООООО

200

1.14

ÎÎÎÎ

Watts W/_C

Operating and Storage Junction Temperature Range

TJ, T

stg

ОООООООО

–65 to +200

ÎÎÎÎ

THERMAL CHARACTERISTICS

Characteristic

Symbol

ОООООООО

Max

ÎÎÎÎ

Unit

Thermal Resistance, Junction to Case

ОООООООО

0.875

ÎÎÎÎ

C/W

200

150

100

40 60 120 140 200

Figure 1. Power–Temperature Derating Curve

TC, CASE TEMPERATURE (°C)

0 20 80 100

160

180

, POWER DISSIPATION (WATTS)



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJ802/D

 Motorola, Inc. 1995



30 AMPERE

POWER TRANSISTOR

NPN SILICON

100 VOLTS

200 WATTS

CASE 1–07

TO–204AA

(TO–3)

REV 7

MJ802

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

Characteristic

ÎÎÎÎ

Symbol

Min

Max

ÎÎÎ

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(1)

= 200 mAdc, RBE = 100 Ohms)

ÎÎÎÎ

CER

100

—

ÎÎÎ

Vdc

Collector–Emitter Sustaining Voltage

(1)

= 200 mAdc)

ÎÎÎÎ

CEO(sus)

—

ÎÎÎ

Vdc

Collector–Base Cutoff Current

(VCB = 100 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TC = 150_C)

ÎÎÎÎ

CBO

— —

1.0

5.0

ÎÎÎ

mAdc

Emitter–Base Cutoff Current (VBE = 4.0 Vdc, IC = 0)

ÎÎÎÎ

EBO

—

1.0

ÎÎÎ

mAdc

ON CHARACTERISTICS

(1)

DC Current Gain

(1)

= 7.5 Adc, VCE = 2.0 Vdc)

ÎÎÎÎ

100

ÎÎÎ

—

Base–Emitter “On” Voltage (IC = 7.5 Adc, VCE = 2.0 Vdc)

ÎÎÎÎ

BE(on)

—

1.3

ÎÎÎ

Vdc

Collector–Emitter Saturation Voltage (IC = 7.5 Adc, IB = 0.75 Adc)

ÎÎÎÎ

CE(sat)

—

0.8

ÎÎÎ

Vdc

Base–Emitter Saturation Voltage (IC = 7.5 Adc, IB = 0.75 Adc)

ÎÎÎÎ

BE(sat)

—

1.3

ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Current Gain — Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)

ÎÎÎÎ

2.0

—

ÎÎÎ

MHz

(1)

Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.

, NORMALIZED CURRENT GAIN

IC, COLLECTOR CURRENT (AMP)

TJ = 175° C

3.0

IC, COLLECTOR CURRENT (AMP)

1.0

2.0

0.7

1.0

0.5

0.1

Figure 2. DC Current Gain

Figure 3. ‘‘On” Voltages

BE(sat)

@ IC/IB = 10

VCE = 2.0 V

25°C

– 55°C

TJ = 25°C

0.03 0.1 0.2 0.3 0.5 10 20 30

“ON” VOLTAGE (VOLTS)

0.3

0.2

0.05 2.0 3.0 5.0

DATA SHOWN IS OBTAINED FROM PULSE TESTS AND ADJUSTED TO NULLIFY EFFECT OF I

CBO

2.0

1.8

1.4

1.6

1.2

1.0

0.8

0.6

0.4

0.2

1.00.03 0.1 0.2 0.3 0.5 10 20 300.05 2.0 3.0 5.0

VBE @ VCE = 2.0 V

CE(sat)

@ IC/IB = 10

, COLLECTOR CURRENT (AMP)

1.0 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0 20

1.0

0.2

Figure 4. Active Region Safe Operating Area

100

5.0

2.0

0.5

0.1

2.0 3.0 1005030

SECONDARY BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATIONS TC = 25°C PULSE DUTY CYCLE

≤

10%

TJ = 200° C

100

1.0 ms

5.0 ms

The Safe Operating Area Curves indicate IC – VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below the maximum TJ, power temperature derating must be observed for both steady state and pulse power conditions.

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