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1
Motorola Bipolar Power Transistor Device Data
. . . for use as an output device in complementary audio amplifiers to 100–Watts
music power per channel.
• High DC Current Gain — hFE = 25–100 @ IC = 7.5 A
• Excellent Safe Operating Area
• Complement to the PNP MJ4502
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Collector–Emitter Voltage
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Collector–Emitter Voltage
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Total Device Dissipation @ TC = 25°C
Derate above 25_C
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Operating and Storage Junction Temperature Range
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Thermal Resistance, Junction to Case
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_
C/W
200
150
100
50
0
40 60 120 140 200
Figure 1. Power–Temperature Derating Curve
TC, CASE TEMPERATURE (°C)
0 20 80 100
160
180
P
D
, POWER DISSIPATION (WATTS)
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ802/D
30 AMPERE
POWER TRANSISTOR
NPN SILICON
100 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
REV 7
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MJ802
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Collector–Emitter Breakdown Voltage
(1)
(I
C
= 200 mAdc, RBE = 100 Ohms)
Collector–Emitter Sustaining Voltage
(1)
(I
C
= 200 mAdc)
Collector–Base Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TC = 150_C)
Emitter–Base Cutoff Current (VBE = 4.0 Vdc, IC = 0)
DC Current Gain
(1)
(I
C
= 7.5 Adc, VCE = 2.0 Vdc)
Base–Emitter “On” Voltage (IC = 7.5 Adc, VCE = 2.0 Vdc)
Collector–Emitter Saturation Voltage (IC = 7.5 Adc, IB = 0.75 Adc)
Base–Emitter Saturation Voltage (IC = 7.5 Adc, IB = 0.75 Adc)
Current Gain — Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
MHz
(1)
Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.
h
FE
, NORMALIZED CURRENT GAIN
IC, COLLECTOR CURRENT (AMP)
TJ = 175° C
3.0
IC, COLLECTOR CURRENT (AMP)
1.0
2.0
0.7
1.0
0.5
0.1
Figure 2. DC Current Gain
Figure 3. ‘‘On” Voltages
V
BE(sat)
@ IC/IB = 10
VCE = 2.0 V
25°C
– 55°C
TJ = 25°C
0.03 0.1 0.2 0.3 0.5 10 20 30
“ON” VOLTAGE (VOLTS)
0.3
0.2
0.05 2.0 3.0 5.0
DATA SHOWN IS OBTAINED FROM PULSE TESTS
AND ADJUSTED TO NULLIFY EFFECT OF I
CBO
.
2.0
1.8
1.4
1.6
1.2
0
1.0
0.8
0.6
0.4
0.2
1.00.03 0.1 0.2 0.3 0.5 10 20 300.05 2.0 3.0 5.0
VBE @ VCE = 2.0 V
V
CE(sat)
@ IC/IB = 10
I
C
, COLLECTOR CURRENT (AMP)
50
1.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0 20
10
1.0
0.2
10
Figure 4. Active Region Safe Operating Area
100
5.0
2.0
0.5
0.1
20
2.0 3.0 1005030
SECONDARY BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATIONS TC = 25°C
PULSE DUTY CYCLE
≤
10%
TJ = 200° C
100
µ
s
1.0 ms
5.0 ms
dc
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To insure operation below the maximum TJ, power temperature derating must be observed for both steady state and
pulse power conditions.