Motorola MJ4502 Datasheet

1

Motorola Bipolar Power Transistor Device Data

  


. . . for use as an output device in complementary audio amplifiers to 100–Watts
music power per channel.

• High DC Current Gain — hFE = 25–100 @ IC = 7.5 A

• Excellent Safe Operating Area

• Complement to the NPN MJ802

MAXIMUM RATINGS

Rating

Symbol

ОООООООО

ОООООООО

ОООООООО

Value

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Unit

Collector–Emitter Voltage

V

CER

ОООООООО

ОООООООО

ОООООООО

100

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector–Base Voltage

V

CB

ОООООООО

ОООООООО

ОООООООО

100

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector–Emitter Voltage

V

CEO

ОООООООО

ОООООООО

ОООООООО

90

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Emitter–Base Voltage

V

EB

ОООООООО

ОООООООО

ОООООООО

4.0

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector Current

I

C

ОООООООО

ОООООООО

ОООООООО

30

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Adc

Base Current

I

B

ОООООООО

ОООООООО

ОООООООО

7.5

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Adc

Total Device Dissipation @ TC = 25_C

Derate above 25_C

P

D

ОООООООО

ОООООООО

ОООООООО

ОООООООО

200

1.14

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Watts
W/_C

Operating and Storage Junction Temperature Range

TJ, T

stg

ОООООООО

ОООООООО

ОООООООО

–65 to +200

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C

MAXIMUM RATINGS

Characteristic

Symbol

ОООООООО

ОООООООО

ОООООООО

Max

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Unit

Thermal Resistance, Junction to Case

θ

JC

ОООООООО

ОООООООО

ОООООООО

0.875

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C/W

200

150

50

0

0 20 40 60 80 100 120 140 160 180 200

Figure 1. Power–Temperature Derating Curve

TC, CASE TEMPERATURE (°C)

P

D

, POWER DISSIPATION (WATTS)

100



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJ4502/D

 Motorola, Inc. 1995



30 AMPERE

POWER TRANSISTOR

PNP SILICON

100 VOLTS

200 WATTS

CASE 1–07

TO–204AA

(TO–3)

REV 7

MJ4502

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted)

Characteristic

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Symbol

Min

Max

ÎÎÎ

ÎÎÎ

ÎÎÎ

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(1)

(IC = 200 mAdc, RBE = 100 Ohms)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

V

(BR)CER

100

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Collector–Emitter Sustaining Voltage

(1)

(IC = 200 mAdc)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

V

CEO(sus)

90

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Collector–Base Cutoff Current

(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TC = 150_C)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

I

CBO

—
—

1.0

5.0

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

Emitter–Base Cutoff Current (VBE = 4.0 Vdc, IC = 0)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

I

EBO

—

1.0

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

ON CHARACTERISTICS

DC Current Gain (IC = 7.5 Adc, VCE = 2.0 Vdc)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

h

FE

25

100

ÎÎÎ

ÎÎÎ

ÎÎÎ

—

Base–Emitter “On” Voltage (IC = 7.5 Adc, VCE = 2.0 Vdc)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

V

BE(on)

—

1.3

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Collector–Emitter Saturation Voltage (IC = 7.5 Adc, IB = 0.75 Adc)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

V

CE(sat)

—

0.8

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Base–Emitter Saturation Voltage (IC = 7.5 Adc, IB = 0.75 Adc)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

V

BE(sat)

—

1.3

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Current Gain — Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

f

T

2.0

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

MHz

(1)

Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.

3.0

0.03

Figure 2. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.1

0.05 0.1 0.2 0.3 3.0 5.0 30

1.0

0.5

0.3

0.2

2.0

IC, COLLECTOR CURRENT (AMP)

1.4

0.8

0.6

0.4

0

TJ = 25°C

V

BE(sat)

@ IC/IB = 10

V

CE(sat)

@ IC/IB = 10

“ON” VOLTAGE (VOLTS)

Figure 3. “On” Voltages

2.0

0.7

h

FE

, NORMALIZED CURRENT GAIN

TJ = 175°C

25°C

–55°C

VCE = 2.0 V

DATA SHOWN IS OBTAINED FROM PULSE TESTS
AND ADJUSTED TO NULLIFY EFFECT OF I

CBO

.

0.5 1.0 2.0 2010

VBE @ VCE = 2.0 V

0.2

1.0

1.2

1.8

1.6

0.03 0.05 0.1 0.2 0.3 3.0 5.0 300.5 1.0 2.0 2010

Figure 4. Active Region Safe Operating Area

100

0.1

50
20

10

5.0

2.0

1.0

0.5

0.2

1.0 2.0 3.0 5.0 10 20 30 50 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

SECONDARY BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATIONS @ TC = 25°C
PULSE DUTY CYCLE

v

10%

I

C

, COLLECTOR CURRENT (AMP)

TJ = 200°C

dc

5.0 ms

1.0 ms
100 µs

The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the ap­plicable Safe Area to avoid causing a catastrophic failure. To
insure operation below the maximum TJ, power–temperature
derating must be observed for both steady state and pulse
power conditions.