1
Motorola Bipolar Power Transistor Device Data
. . . designed for medium–to–high voltage inverters, converters, regulators and
switching circuits.
• High Voltage — V
CEX
= 400 Vdc
• Gain Specified to 3.5 Amp
• High Frequency Response to 2.5 MHz
Collector–Emitter Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25_C
Derate above 25_C
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Collector–Emitter Sustaining Voltage* (1)
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 400 Vdc, V
EB(off)
= 1.5 Vdc)
(VCE = 400 Vdc, V
EB(off)
= 1.5 Vdc,
T
C
= 125_C)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
DC Current Gain(1)
(IC = 0.5 Adc, VCE = 5.0 Vdc) MJ413
(IC = 1.0 Adc, VCE = 5.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc) MJ423
(IC = 2.5 Adc, VCE = 5.0 Vdc)
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Collector–Emitter Saturation Voltage (1)
(IC = 0.5 Adc, IB = 0.05 Adc) MJ413
(IC = 1.0 Adc, IB – 0.10 Adc) MJ423
Base–Emitter Saturation Voltage
(IC = 0.5 Adc, IB = 0.05 Adc) MJ413
(IC = 1.0 Adc, IB = 0.1 Adc) MJ423
Current–Gain — Bandwidth Product
(IC = 200 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
MHz
(1) PW v 300 µs Duty Cycle v 2.0%.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ413/D
10 AMPERE
POWER TRANSISTORS
NPN SILICON
400 VOLTS
125 WATTS
CASE 1–07
TO–204AA
(TO–3)
REV 7
2
Motorola Bipolar Power Transistor Device Data
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (mA) I
C
, COLLECTOR CURRENT (AMP)
100
0.1
IC, COLLECTOR CURRENT (AMP)
1.0
70
1.0
TJ = 100° C
1.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
6.0 200
1.0
0.1
100
125
TC, CASE TEMPERATURE (
°
C)
100
100
50
75
25
0
Figure 1. Active–Region Safe–Operating Area
Figure 2. Power–Temperature Derating Curve
Figure 3. Sustaining Voltage Test Load Line Figure 4. Sustaining Voltage Test Circuit
10
0.01
2.0 4.0 1000
0.2 0.3 0.5 0.7 2.0 3.0 5.0
VCE = 5.0 V
25°C
0 20 40 60 80 120 180 200
100 µs
1.0 ms
dc
0 500
V
CEO(sus)
IS ACCEPTABLE WHEN
VCE
≥
325 V AT IC = 100 mA
400
200
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Current Gain
500
300
0
400300200100
200
Ω
+
–
+
–
6.0 V 50 V
TO SCOPE
X
Y
1.0
Ω
300
Ω
Hg RELAY
50 mHy
10 6020 40 400
SECONDARY BREAKDOWN LIMITATION
THERMAL LIMITATION AT T
C
= 25°C
(BASE–EMITTER DISSIPATION IS
PERCEPTIBLE ABOVE I
C
≈ 5 AMP)
The Safe Operating Area Curves indi-
cate I
C
– VCE limits below which the device will not enter secondary breakdown.
Collector load lines for specific circuits
must fall within the applicable Safe Area to
avoid causing a catastrophic failure. To insure operation below the maximum T
J
,
power temperature derating must be observed for both steady state and pulse
power conditions.
P
D
, POWER DISSIPATION (WATTS)
140 160
7.0
50
30
20
10
7.0
5.0
3.0
2.0
10
0
VBE, BASE–EMITTER VOLTAGE (VOLTS)
1.0
7.0
0.1
0.5 1.5 2.0
VCE = 10 V
Figure 6. Transconductance
2.5
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
h
FE
, DC CURRENT GAIN
TJ = 150°C
10
25°C
TJ = 100° C