Motorola mj15024 DATASHEETS
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ON Semiconductor
Silicon Power Transistors
The MJ15022 and MJ15024 are PowerBase power transistors
designed for high power audio, disk head positioners and other linear
applications.
• High Safe Operating Area (100% Tested) —
2 A @ 80 V
• High DC Current Gain —
= 15 (Min) @ IC = 8 Adc
h
FE
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Emitter Voltage
Collector Current — Continuous
Peak (1)
Base Current — Continuous
Total Power Dissipation @ TC = 25C
ОООООООООО
Derate above 25C
Operating and Storage Junction
Temperature Range
ОООООООООО
Symbol
V
CEO
V
CBO
V
EBO
V
CEX
I
C
I
B
P
D
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TJ, T
stg
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MJ15022
200
350
MJ15024
250
400
5
400
16
30
5
250
ООООО
1.43
–65 to +200
ООООО
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
Î
W/C
C
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NPN
MJ15022
MJ15024
*ON Semiconductor Preferred Device
16 AMPERE
SILICON
POWER TRANSISTORS
200 AND 250 VOLTS
250 WATTS
CASE 1–07
TO–204AA
(TO–3)
*
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev . 9
Symbol
R
θ
JC
Max
0.70
C/W
1 Publication Order Number:
Unit
MJ15022/D
MJ15022 MJ15024
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ELECTRICAL CHARACTERISTICS (T
= 25C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(I
= 100 mAdc, IB = 0) MJ15022
C
ОООООООООООООООООООО
Collector Cutoff Current
ОООООООООООООООООООО
(V
= 200 Vdc, V
CE
= 250 Vdc, V
(V
CE
ОООООООООООООООООООО
= 1.5 Vdc) MJ15022
BE(off)
= 1.5 Vdc) MJ15024
BE(off)
MJ15024
Collector Cutoff Current
(V
= 150 Vdc, IB = 0) MJ15022
CE
ОООООООООООООООООООО
= 200 vdc, IB = 0) MJ15024
(V
CE
Emitter Cutoff Current
ОООООООООООООООООООО
(V
= 5 Vdc, IB = 0)
CE
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
= 50 Vdc, t = 0.5 s (non–repetitive))
CE
ОООООООООООООООООООО
= 80 Vdc, t = 0.5 s (non–repetitive))
(V
CE
ON CHARACTERISTICS
DC Current Gain
ОООООООООООООООООООО
(I
= 8 Adc, VCE = 4 Vdc)
C
= 16 Adc, VCE = 4 Vdc)
(I
C
ОООООООООООООООООООО
Collector–Emitter Saturation Voltage
(I
= 8 Adc, IB = 0.8 Adc)
C
ОООООООООООООООООООО
= 16 Adc, IB = 3.2 Adc)
(I
C
Base–Emitter On Voltage
(I
= 8 Adc, VCE = 4 Vdc)
ОООООООООООООООООООО
C
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
= 1 Adc, VCE = 10 Vdc, f
C
Output Capacitance
ОООООООООООООООООООО
(V
= 10 Vdc, IE = 0, f
CB
test
= 1 MHz)
test
= 1 MHz)
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%.
Symbol
V
CEO(sus)
ÎÎÎ
I
CEX
ÎÎÎ
ÎÎÎ
I
CEO
ÎÎÎ
I
EBO
ÎÎÎ
I
S/b
ÎÎÎ
h
FE
ÎÎÎ
ÎÎÎ
V
CE(sat)
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V
BE(on)
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f
T
C
ob
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Min
200
Î
250
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—
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—
—
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—
—
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5
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2
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15
5
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—
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—
—
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4
—
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Max
—
ÎÎ
—
ÎÎ
250
ÎÎ
250
500
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500
500
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—
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—
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60
—
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1.4
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4.0
2.2
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—
500
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Unit
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µAdc
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µAdc
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µAdc
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Adc
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—
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Vdc
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Vdc
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MHz
pF
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100
50
T
20
10
5.0
BONDING WIRE LIMITED
1.0
THERMAL LIMITATION
(SINGLE PULSE)
SECOND BREAKDOWN
, COLLECTOR CURRENT (AMPS)
C
I
0.2
LIMITED
0.1
0.1 0.2 0.5 10 1 k
20
50 250
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active–Region Safe Operating Area
= 25°C
C
There are two limitations on the powerhandling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – V
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on T
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values Ion than the limitations imposed by
second breakdown.
500100
http://onsemi.com
2
= 200C; TC is
J(pk)
CE
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