Motorola MJ15002, MJ15001 Datasheet

Motorola Bipolar Power Transistor Device Data

   

The MJ15001 and MJ15002 are EpiBase power transistors designed for h igh

power audio, disk head positioners and other linear applications.

• High Safe Operating Area (100% Tested) — 200 W @ 40 V 50 W @ 100 V

• For Low Distortion Complementary Designs

• High DC Current Gain —

hFE = 25 (Min) @ IC = 4 Adc

MAXIMUM RATINGS

Rating

Symbol

ОООООООО

Value

ÎÎÎÎ

Unit

Collector–Emitter Voltage

CEO

ОООООООО

140

ÎÎÎÎ

Vdc

Collector–Base Voltage

CBO

ОООООООО

140

ÎÎÎÎ

Vdc

Emitter–Base Voltage

EBO

ОООООООО

ÎÎÎÎ

Vdc

Collector Current — Continuous

ОООООООО

ÎÎÎÎ

Adc

Base Current — Continuous

ОООООООО

ÎÎÎÎ

Adc

Emitter Current — Continuous

ОООООООО

ÎÎÎÎ

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25_C

ОООООООО

200

1.14

ÎÎÎÎ

Watts W/_C

Operating and Storage Junction Temperature Range

TJ, T

stg

ОООООООО

–65 to +200

ÎÎÎÎ

THERMAL CHARACTERISTICS

Characteristic

Symbol

ОООООООО

Max

ÎÎÎÎ

Unit

Thermal Resistance, Junction to Case

θJC

ОООООООО

0.875

ÎÎÎÎ

C/W

Maximum Lead Temperature for Soldering Purposes:

1/16″ from Case for v 10 seconds

ОООООООО

265

ÎÎÎÎ



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJ15001/D

 Motorola, Inc. 1995

 

15 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

140 VOLTS

200 WATTS





CASE 1–07

TO–204AA

(TO–3)

 

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

Characteristic

ÎÎÎÎ

Symbol

Min

Max

ÎÎÎ

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC, = 200 mAdc, IB = 0)

ÎÎÎÎ

CEO(sus)

140

—

ÎÎÎ

Vdc

Collector Cutoff Current

(VCE = 140 Vdc, V

BE(off)

= 1.5 Vdc)

(VCE = 140 Vdc, V

BE(off)

= 1.5 Vdc, TC = 150_C)

ÎÎÎÎ

CEX

— —

100

ÎÎÎ

µAdc

mAdc

Collector Cutoff Current

(VCE = 140 Vdc, IB = 0)

ÎÎÎÎ

CEO

—

250

ÎÎÎ

µAdc

Emitter Cutoff Current

(VEB = 5 Vdc, IC = 0)

ÎÎÎÎ

EBO

—

100

ÎÎÎ

µAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(VCE = 40 Vdc, t = 1 s (non–repetitive)) (VCE = 100 Vdc, t = 1 s (non–repetitive))

ÎÎÎÎ

S/b

0.5

— —

ÎÎÎ

Adc

ON CHARACTERISTICS

DC Current Gain

(IC = 4 Adc, VCE = 2 Vdc)

ÎÎÎÎ

150

ÎÎÎ

—

Collector–Emitter Saturation Voltage

(IC = 4 Adc, IB = 0.4 Adc)

ÎÎÎÎ

CE(sat)

—

ÎÎÎ

Vdc

Base–Emitter On Voltage

(IC = 4 Adc, VCE = 2 Vdc)

ÎÎÎÎ

BE(on)

—

ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 0.5 Adc, VCE = 10 Vdc, f

test

= 0.5 MHz)

ÎÎÎÎ

—

ÎÎÎ

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f

test

= 1 MHz)

ÎÎÎÎ

—

1000

ÎÎÎ

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2%.

, COLLECTOR CURRENT (AMP)

Figure 1. Active–Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5 7 10 200

2 3 50 70 10020 30

200

0.5

0.2

0.7

0.3

TC = 25

TJ = 200°C BONDING WIRE LIMITED THERMAL LIMITATION (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED V

CEO

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 1 is based on TJ

(pk)

= 200_C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the l imitations imposed by second breakdown.

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