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Motorola Bipolar Power Transistor Device Data
The MJ15001 and MJ15002 are EpiBase power transistors designed for h igh
power audio, disk head positioners and other linear applications.
• High Safe Operating Area (100% Tested) —
200 W @ 40 V
50 W @ 100 V
• For Low Distortion Complementary Designs
• High DC Current Gain —
hFE = 25 (Min) @ IC = 4 Adc
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Collector–Emitter Voltage
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Collector Current — Continuous
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Base Current — Continuous
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Emitter Current — Continuous
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Total Power Dissipation @ TC = 25_C
Derate above 25_C
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Operating and Storage Junction Temperature Range
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Thermal Resistance, Junction to Case
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Maximum Lead Temperature for Soldering Purposes:
1/16″ from Case for v 10 seconds
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SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ15001/D
15 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
140 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
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Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Collector–Emitter Sustaining Voltage (1)
(IC, = 200 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 140 Vdc, V
BE(off)
= 1.5 Vdc)
(VCE = 140 Vdc, V
BE(off)
= 1.5 Vdc, TC = 150_C)
Collector Cutoff Current
(VCE = 140 Vdc, IB = 0)
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
Second Breakdown Collector Current with Base Forward Biased
(VCE = 40 Vdc, t = 1 s (non–repetitive))
(VCE = 100 Vdc, t = 1 s (non–repetitive))
DC Current Gain
(IC = 4 Adc, VCE = 2 Vdc)
Collector–Emitter Saturation Voltage
(IC = 4 Adc, IB = 0.4 Adc)
Base–Emitter On Voltage
(IC = 4 Adc, VCE = 2 Vdc)
Current–Gain — Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f
test
= 0.5 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f
test
= 1 MHz)
pF
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2%.
I
C
, COLLECTOR CURRENT (AMP)
5
Figure 1. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5 7 10 200
10
2
2 3 50 70 10020 30
7
200
1
3
0.5
0.2
0.7
0.3
TC = 25
°
C
TJ = 200°C
BONDING WIRE LIMITED
THERMAL LIMITATION (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED V
CEO
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 1 is based on TJ
(pk)
= 200_C; TC is
variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be
handled to values less than the l imitations imposed by
second breakdown.