Motorola MCM6929AWJ8, MCM6929AWJ8R, MCM6929AWJ10R, MCM6929AWJ12, MCM6929AWJ12R Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Advance Information

256K x 4 Bit Fast Static Random

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by MCM6929A/D

MCM6929A

Access Memory

The MCM6929A is a 1,048,576 bit static random access memory organized
as 262,144 words of 4 bits. Static design eliminates the need for external clocks
or timing strobes.

Output enable (G
flexibility and eliminates bus contention problems.

This device meets JEDEC standards for functionality and revolutionary pinout,
and is available in a 400 mil plastic small–outline J–leaded package.

• Single 3.3 V Power Supply

• Fully Static — No Clock or Timing Strobes Necessary

• All Inputs and Outputs Are TTL Compatible

• Three State Outputs

• Fast Access Times: 8, 10, 12, 15 ns

• Center Power and I/O Pins for Reduced Noise

• Fully 3.3 V BiCMOS

A
A
A
A
A
A
A
A
A

DQ

DQ

) is a special control feature that provides increased system

BLOCK DIAGRAM

V

DD

VSS

ROW

DECODER

INPUT

DATA

CONTROL

AA A A A

MEMORY

MATRIX

512 ROWS x 512 x 4

COLUMNS

COLUMN I/O

COLUMN DECODER

A A A A

WJ PACKAGE

400 MIL SOJ

CASE 857A–02

PIN ASSIGNMENT

NC A

1

A

2

A

3

A

4

A

5

E

6

DQ

7

V

8

DD

V

9

SS

DQ

10

W

11

A

12

A

13

A

14

A

15

NC NC

16

32
31
30
29
28
27

26
25
24
23
22
21
20
19
18

17

PIN NAMES

A Address Input. . . . . . . . . . . . . . . . . . . . .

E
W
G

DQ Data Input/Output. . . . . . . . . . . . . . .

V

DD

V

SS

NC No Connection. . . . . . . . . . . . . . . . . .

+ 3.3 V Power Supply. . . . . . . . . . .

A
A
A
A
G

DQ
V

SS

V

DD

DQ
A
A

A
A
A

Chip Enable. . . . . . . . . . . . . . . . . . . . . .

Write Enable. . . . . . . . . . . . . . . . . . . .

Output Enable. . . . . . . . . . . . . . . . . . .

Ground. . . . . . . . . . . . . . . . . . . . . . .

E

W

G

This document contains information on a new product. Motorola reserves the right to change or discontinue this product without notice.

REV1
2/26/97

 Motorola, Inc. 1997

MOTOROLA FAST SRAM

MCM6929A

1

TRUTH TABLE (X = Don’t Care)

G W Mode VDD Current Output Cycle

E

H X X Not Selected I
L H H Output Disabled I
L L H Read I
L X L Write I

SB1

, I

DDA
DDA
DDA

SB2

High–Z —
High–Z —

D

out

High–Z Write Cycle

Read Cycle

ABSOLUTE MAXIMUM RATINGS (See Note)

Rating

Power Supply Voltage V
Voltage Relative to VSS for Any Pin Except

V

DD

Output Current I
Power Dissipation P
Temperature Under Bias T
Operating Temperature T
Storage Temperature — Plastic T

NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are

exceeded. Functional operation should be restricted to RECOMMENDED OPER­ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.

Symbol Value Unit

DD

Vin, V

out

bias

stg

out

D

A

– 0.5 to + 4.6 V

– 0.5 to VDD + 0.5 V

± 30 mA

0.6 W

– 10 to + 85 °C

0 to + 70 °C

– 55 to + 125 °C

This device contains circuitry to protect the
inputs against damage due to high static volt­ages or electric fields; however, it is advised
that normal precautions be taken to avoid appli­cation of any voltage higher than maximum
rated voltages to these high–impedance cir­cuits.

This BiCMOS memory circuit has been de­signed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear feet
per minute is maintained.

DC OPERA TING CONDITIONS AND CHARACTERISTICS

(VDD = 3.3 V +10%, – 5% TA = 0 to 70°C, Unless Otherwise Noted)

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol Min Typ Max Unit

Supply Voltage (Operating Voltage Range) V
Input High Voltage V
Input Low Voltage V

*VIL (min) = –0.5 V dc; VIL (min) = –2.0 V ac (pulse width ≤ 2.0 ns) for I ≤ 20.0 mA.

**VIH (max) = VDD + 0.3 V dc; VIH (max) = VDD + 2 V ac (pulse width ≤ 2.0 ns) for I ≤ 20.0 mA.

DC CHARACTERISTICS

Parameter Symbol Min Max Unit

Input Leakage Current (All Inputs, Vin = 0 to VDD) I
Output Leakage Current (E = VIH, V
Output Low Voltage (IOL = + 8.0 mA) V
Output High Voltage (IOH = – 4.0 mA) V

= 0 to VDD) I

out

DD

IH

IL

3.135 3.3 3.6 V

2.2 —

– 0.5*

lkg(I)

lkg(O)

OL

OH

— 0.8 V

— ±1.0 µA
— ±1.0 µA
— 0.4 V

2.4 — V

VDD + 0.3**

V

MCM6929A
2

MOTOROLA FAST SRAM

POWER SUPPLY CURRENTS (See Note 1)

6929A–8 6929A–10 6929A–12 6929A–15

Parameter Symbol Typ Max Typ Max Typ Max Typ Max Unit Notes

AC Active Supply Current

(I

= 0 mA) (VDD = max, f = f

out

Active Quiescent Current

(E

= VIL, VDD = max, f = 0 MHz)

AC Standby Current

(E

= VIH, VDD = max, f = f

CMOS Standby Current

(VDD = max, f = 0 MHz,
E

≥ VDD – 0.2 V,

Vin ≤ VSS + 0.2 V, or ≥ VDD – 0.2 V)

NOTES:

1. Typical current = 25°C @ 3.3 V.

2. Reference AC Operating Conditions and Characteristics for input and timing (VIH/VIL, tr/tf, pulse level 0 to 3.0 V, VIH = 3.0 V).

3. All addresses transition simultaneously low (LSB) and then high (MSB).

4. Data states are all zero.

max

max

)

)

I

DDA

I

DD2

I

SB1

I

SB2

— 150 — 130 — 120 — 110 mA 2, 3, 4

— 80 — 80 — 80 — 80 mA

— 50 — 45 — 40 — 35 mA 2, 3, 4

— 20 — 20 — 20 — 20 mA

CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, T

Address Input Capacitance C
Control Pin Input Capacitance C
Input/Output Capacitance C

= 25°C, Periodically Sampled Rather Than 100% Tested)

A

Parameter

Symbol Typ Max Unit

in
in

I/O

— 6 pF
— 6 pF
— 8 pF

MOTOROLA FAST SRAM

MCM6929A

3