MOTOROLA MC74HC175FR2, MC74HC175FL2, MC74HC175FEL, MC74HC175DR2, MC74HC175DT Datasheet

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SEMICONDUCTOR TECHNICAL DATA

1

REV 6

 Motorola, Inc. 1995

10/95

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High–Performance Silicon–Gate CMOS

The MC54/74HC175 is identical in pinout to the LS175. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.

This device consists of four D flip–flops with common Reset and Clock inputs, a nd separate D inputs. Reset (active–low) is asynchronous and occurs when a low level is applied to the Reset input. Information at a D input is transferred to the corresponding Q output on the next positive going edge of the Clock input.

• Output Drive Capability: 10 LSTTL Loads

• Outputs Directly Interface to CMOS, NMOS, and TTL

• Operating Voltage Range: 2 to 6 V

• Low Input Current: 1 µA

• High Noise Immunity Characteristic of CMOS Devices

• In Compliance with the Requirements Defined by JEDEC Standard

No. 7A

• Chip Complexity 166 FETs or 41.5 Equivalent Gates

LOGIC DIAGRAM

PIN 16 = V

CC

PIN 8 = GND

9

4

5 12 13

CLOCK

D0 D1 D2 D3

RESET

1

DATA

INPUTS

2 3

7

6 10 11 15 14

Q0 Q0

Q1 Q1 Q2

Q2 Q3 Q3

INVERTING

AND

NONINVERTING

OUTPUTS



PIN ASSIGNMENT

FUNCTION TABLE

13

14

15

16

9

10

11

125

4

3

2

1

8

7

6

D2

D3

Q3

V

CC

CLOCK

Q2

D0

Q0

RESET

GND

Q1

D1

Inputs Outputs

Reset Clock D Q Q

L X X L H H H H L H L L H H L X No Change

D SUFFIX

SOIC PACKAGE

CASE 751B–05

N SUFFIX

PLASTIC PACKAGE

CASE 648–08

ORDERING INFORMATION

MC54HCXXXJ MC74HCXXXN MC74HCXXXD

Ceramic Plastic SOIC

1

16

1

16

J SUFFIX

CERAMIC PACKAGE

CASE 620–10

1

16

MC54/74HC175

MOTOROLA High–Speed CMOS Logic Data

DL129 — Rev 6

2

MAXIMUM RATINGS*

Symbol

Parameter

Value

Unit

V

CC

DC Supply Voltage (Referenced to GND)

– 0.5 to + 7.0

V

in

DC Input Voltage (Referenced to GND)

– 1.5 to VCC + 1.5

V

out

DC Output Voltage (Referenced to GND)

– 0.5 to VCC + 0.5

V

I

in

DC Input Current, per Pin

± 20

mA

I

out

DC Output Current, per Pin

± 25

mA

I

CC

DC Supply Current, VCC and GND Pins

± 50

mA

P

D

Power Dissipation in Still Air,Plastic or Ceramic DIP†

SOIC Package†

750 500

mW

T

stg

Storage Temperature

– 65 to + 150

_

C

T

L

Lead Temperature, 1 mm from Case for 10 Seconds

(Plastic DIP or SOIC Package)

(Ceramic DIP)

260 300

_

C

*Maximum Ratings are those values beyond which damage to the device may occur.

Functional operation should be restricted to the Recommended Operating Conditions.

†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C

Ceramic DIP: – 10 mW/_C from 100_ to 125_C SOIC Package: – 7 mW/_C from 65_ to 125_C

For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min

Max

Unit

V

CC

DC Supply Voltage (Referenced to GND)

2.0

6.0

V

Vin, V

out

DC Input Voltage, Output Voltage (Referenced to GND)

0

V

CC

V

T

A

Operating Temperature, All Package Types

– 55

+ 125

_

C

tr, t

f

Input Rise and Fall Time VCC = 2.0 V

(Figure 1) VCC = 4.5 V

VCC = 6.0 V

0 0 0

1000

500 400

ns

DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

Guaranteed Limit

Symbol

Parameter

Test Conditions

V

CC V

– 55 to

25_C

v

85_Cv 125_C

Unit

V

IH

Minimum High–Level Input Voltage

V

out

= 0.1 V or VCC – 0.1 V

|I

out

| v 20 µA

2.0

4.5

6.0

1.5

3.15

4.2

1.5

3.15

4.2

1.5

3.15 4 2

V

IL

Maximum Low–Level Input Voltage

V

out

= 0.1 V or VCC – 0.1 V

|I

out

| v 20 µA

2.0

4.5

6.0

0.3

0.9

1.2

0.3

0.9

1.2

0.3

0.9

1.2

V

OH

Minimum High–Level Output Voltage

Vin = VIH or V

IL

|I

out

| v 20 µA

2.0

4.5

6.0

1.9

4.4

5.9

1.9

4.4

5.9

1.9

4.4

5.9

V

Vin = VIH or VIL|I

out

| v 4.0 mA

|I

out

| v 5.2 mA

4.5

6.0

3.98

5.48

3.84

5.34

3.70

5.20

V

OL

Maximum Low–Level Output Voltage

Vin = VIH or V

IL

|I

out

| v 20 µA

2.0

4.5

6.0

0.1

V

Vin = VIH or VIL|I

out

| v 4.0 mA

|I

out

| v 5.2 mA

4.5

6.0

0.26

0.33

0.40

I

in

Maximum Input Leakage Current

Vin = VCC or GND

6.0

± 0.1

± 1.0

µA

I

CC

Maximum Quiescent Supply Current (per Package)

Vin = VCC or GND I

out

= 0 µA

6.0

8

80

160

µA

NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).

This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance circuit. For proper operation, Vin and V

out

should be constrained to the

range GND v (Vin or V

out

) v VCC.

Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.

MC54/74HC175

High–Speed CMOS Logic Data DL129 — Rev 6

3 MOTOROLA

AC ELECTRICAL CHARACTERISTICS (C

L

= 50 pF, Input tr = tf = 6 ns)

Guaranteed Limit

Symbol

Parameter

V

CC V

– 55 to

25_C

v

85_Cv 125_C

Unit

f

max

Maximum Clock Frequency (50% Duty Cycle)

(Figures 1 and 4)

2.0

4.5

6.0

6.0 30 35

4.8 24 28

4.0 20 24

MHz

t

PLH

,

t

PHL

Maximum Propagation Delay, Clock to Q or Q

(Figures 1 and 4)

2.0

4.5

6.0

150

30 26

190

38 33

225

45 38

ns

t

PHL

Maximum Propagation Delay, Reset to Q or Q

(Figures 2 and 4)

2.0

4.5

6.0

125

25 21

155

31 26

190

38 32

ns

t

TLH

,

t

THL

Maximum Output Transition Time, Any Output

(Figures 1 and 4)

2.0

4.5

6.0

75 15 13

95 19 16

110

22 19

ns

C

in

Maximum Input Capacitance

—

10

pF

NOTES:

1. For propagation delays with loads other than 50 pF, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).

2. Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

C

PD

Power Dissipation Capacitance (Per Flip–Flop)*

35

pF

*Used to determine the no–load dynamic power consumption: PD = CPD V

CC

2

f + ICC VCC. For load considerations, see Chapter 2 of the

Motorola High–Speed CMOS Data Book (DL129/D).

TIMING REQUIREMENTS (Input t

r

= tf = 6 ns)

Guaranteed Limit

Symbol

Parameter

V

CC V

– 55 to

25_C

v

85_Cv 125_C

Unit

t

su

Minimum Setup Time, Data to Clock

(Figure 3)

2.0

4.5

6.0

100

20 17

125

25 21

150

30 26

ns

t

h

Minimum Hold Time, Clock to Data

(Figure 3)

2.0

4.5

6.0

3 3 3

ns

t

rec

Minimum Recovery Time, Reset Inactive to Clock

(Figure 2)

2.0

4.5

6.0

100

20 17

125

25 21

150

30 26

ns

t

w

Minimum Pulse Width, Clock

(Figure 1)

2.0

4.5

6.0

80 16 14

100

20 17

120

24 20

ns

t

w

Minimum Pulse Width, Reset

(Figure 2)

2.0

4.5

6.0

80 16 14

100

20 17

120

24 20

ns

tr, t

f

Maximum Input Rise and Fall Times

(Figure 1)

2.0

4.5

6.0

1000

500 400

1000

500 400

1000

500 400

ns

NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).