Motorola MC74HC158AJ, MC74HC158ADT, MC74HC158AD Datasheet


SEMICONDUCTOR TECHNICAL DATA
3–1
REV 0
Motorola, Inc. 1996
3/96
 
High–Performance Silicon–Gate CMOS
The MC74HC158A is identical in pinout to the LS158. The device inputs are compatible with Standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.
These devices route 2 nibbles (A or B) to a single port (Y) as deter­mined by the Select input. The data is presented at the outputs in inverted form for the HC158A. A high level on the Output Enable input sets all four Y outputs to a high level for the HC158A.
Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS and TTL
Operating Voltage Range: 2 to 6V
Low Input Current: 1µA
High Noise Immunity Characteristic of CMOS Devices
In Compliance With the JEDEC Standard No. 7A Requirements
Chip Complexity: 74 FETs or 18.5 Equivalent Gates
LOGIC DIAGRAM
Select
Nibble
A Inputs
Pin 16 = VCC Pin 8 = GND
1
A3
14
A2
11
A1
5
A0
2
Y3
12
Y2
9
Y1
7
Y0
4
Output
Enable
15
Data Outputs
Nibble
B Inputs
B3
13
B2
10
B1
6
B0
3
1516 14 13 12 11 10
21 3 4 5 6 7
V
CC
9
8
Output Enable
A3 B3 Y3 A2 B2 Y2
Select A0 B0 Y0 A1 B1 Y1 GND
Pinout: 16–Lead Plastic Package (Top View)
This document contains information on a new product. Specifications and information herein are subject to change without notice.
X = Don’t Care A0–A3, B0–B3 = the levels of the respec-
tive Data–Word inputs.
H L L
X L H
FUNCTION TABLE
Inputs Outputs
Output Enable
Select
H
A0
–A3
B0–B3
Y0–Y3

D SUFFIX
SOIC PACKAGE
CASE 751B–05
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
ORDERING INFORMATION
MC74HCXXXAN MC74HCXXXAD MC74HCXXXADT
Plastic SOIC TSSOP
1
16
1
16
1
16
DT SUFFIX
TSSOP PACKAGE
CASE 948F-01
MC74HC158A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
3–2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 25
mA
I
CC
DC Supply Current, VCC and GND Pins
± 50
mA
P
D
Power Dissipation in Still Air, Plastic DIP†
SOIC Package†
TSSOP Package†
750 500 450
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP, SOIC or TSSOP Package)
260
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
– 55
+ 125
_
C
tr, t
f
Input Rise and Fall Time VCC = 2.0 V
(Figure 2) VCC = 3.0 V
VCC = 4.5 V VCC = 6.0 V
0 0 0 0
1000
600 500 400
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
CC
V
–55_C to
25_C
v
85_Cv 125_C
Unit
V
IH
Minimum High–Level Input Voltage
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
2.0
3.0
4.5
6.0
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
V
V
IL
Maximum Low–Level Input Voltage
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
2.0
3.0
4.5
6.0
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
V
V
OH
Minimum High–Level Output Voltage
Vin = VIH or V
IL
|I
out
| v 20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin = VIH or VIL|I
out
| v 2.4 mA
|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.20
3.70
5.20
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance cir­cuit. For proper operation, Vin and V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
MC74HC158A
High–Speed CMOS Logic Data DL129 — Rev 6
3–3 MOTOROLA
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Unit
v
125_C
v
85_C
–55_C to
25_C
V
CC
V
Test Conditions
Parameter
Symbol
V
OL
Maximum Low–Level Output Voltage
Vin = VIH or V
IL
|I
out
| v 20 µA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH or VIL|I
out
| v 2.4 mA
|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.40
0.40
0.40
I
in
Maximum Input Leakage Current
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
µA
I
CC
Maximum Quiescent Supply Current (per Package)
Vin = VCC or GND I
out
= 0 µA
6.0
4
40
160
µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
Symbol
Parameter
V
CC V
–55_C to
25_C
v
85_Cv 125_C
Unit
t
PLH
,
t
PHL
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 4)
2.0
3.0
4.5
6.0
125
85 25 21
155
95 31 26
190 110
38 32
ns
t
PLH
,
t
PHL
Maximum Propagation Delay, CS1 to Output Y
(Figures 2 and 4)
2.0
3.0
4.5
6.0
125
85 25 21
155
95 31 26
190 110
38 32
ns
t
PLH
,
t
PHL
Maximum Propagation Delay, CS2 or CS3 to Output Y
(Figures 3 and 4)
2.0
3.0
4.5
6.0
115
80 23 20
145
90 29 25
175 100
35 30
ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output
(Figures 2 and 4)
2.0
3.0
4.5
6.0
75 27 15 13
95 32 19 16
110
36 22 19
ns
C
in
Maximum Input Capacitance
10
10
10
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
C
PD
Power Dissipation Capacitance (Per Package)*
35
pF
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
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