Motorola MC74HC157AD Datasheet

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SEMICONDUCTOR TECHNICAL DATA

1

REV 6

 Motorola, Inc. 1995

10/95

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High–Performance Silicon–Gate CMOS

The MC54/74HC157A is identical in pinout to the LS157. The device
inputs are compatible with standard CMOS outputs; with pullup resistors,
they are compatible with LSTTL outputs.

This device routes 2 nibbles (A or B) to a single port (Y) as determined by
the Select input. The data is presented at the outputs in noninverted form. A
high level on the Output Enable input sets all four Y outputs to a low level.

The HC157A is similar in function to the HC257 which has 3–state outputs.

• Output Drive Capability: 10 LSTTL Loads

• Outputs Directly Interface to CMOS, NMOS, and TTL

• Operating Voltage Range: 2.0 to 6.0 V

• Low Input Current: 1.0 µA

• High Noise Immunity Characteristic of CMOS Devices

• In Compliance with the Requirements Defined by JEDEC Standard

No. 7A

• Chip Complexity: 82 FETs or 20.5 Equivalent Gates

LOGIC DIAGRAM

2
5

11
14

3

6
10
13

4
7
9

12

1

15

A0
A1
A2
A3

B0
B1
B2
B3

Y0
Y1
Y2
Y3

SELECT
OUTPUT

ENABLE

DATA
OUTPUTS

NIBBLE

A INPUTS

NIBBLE

B INPUTS

PIN 16 = V

CC

PIN 8 = GND

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FUNCTION TABLE

PIN ASSIGNMENT

Inputs

Output Outputs
Enable Select Y0 – Y3

X = don’t care
A0 – A3, B0 – B3 = the levels
of the respective Data–Word
Inputs.

13

14

15

16

9

10

11

125

4

3

2

1

8

7

6

SELECT

Y0

B0

A0

Y1

B1

A1

GND

Y3

B3

A3

OUTPUT
ENABLE

V

CC

B2

A2

Y2

H

L
L

X
L
H

L
A0–A3
B0–B3

D SUFFIX

SOIC PACKAGE

CASE 751B–05

N SUFFIX

PLASTIC PACKAGE

CASE 648–08

ORDERING INFORMATION

MC54HCXXXAJ
MC74HCXXXAN
MC74HCXXXAD
MC74HCXXXADT

Ceramic
Plastic
SOIC
TSSOP

1

16

1

16

1

16

DT SUFFIX

TSSOP PACKAGE

CASE 948F–01

J SUFFIX

CERAMIC PACKAGE

CASE 620–10

1

16

MC54/74HC157A

MOTOROLA High–Speed CMOS Logic Data

DL129 — Rev 6

2

MAXIMUM RATINGS*

Symbol

Parameter

Value

Unit

V

CC

DC Supply Voltage (Referenced to GND)

– 0.5 to + 7.0

V

V

in

DC Input Voltage (Referenced to GND)

– 1.5 to VCC + 1.5

V

V

out

DC Output Voltage (Referenced to GND)

– 0.5 to VCC + 0.5

V

I

in

DC Input Current, per Pin

± 20

mA

I

out

DC Output Current, per Pin

± 25

mA

I

CC

DC Supply Current, VCC and GND Pins

± 50

mA

P

D

Power Dissipation in Still Air,Plastic or Ceramic DIP†

SOIC Package†

TSSOP Package†

750
500
450

mW

T

stg

Storage Temperature

– 65 to + 150

_

C

T

L

Lead Temperature, 1 mm from Case for 10 Seconds

(Plastic DIP, SOIC or TSSOP Package)

(Ceramic DIP)

260
300

_

C

*Maximum Ratings are those values beyond which damage to the device may occur.

Functional operation should be restricted to the Recommended Operating Conditions.

†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C

Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: – 6.1 mW/_C from 65_ to 125_C

For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min

Max

Unit

V

CC

DC Supply Voltage (Referenced to GND)

2.0

6.0

V

Vin, V

out

DC Input Voltage, Output Voltage
(Referenced to GND)

0

V

CC

V

T

A

Operating Temperature, All Package Types

– 55

+ 125

_

C

tr, t

f

Input Rise and Fall Time VCC = 2.0 V

(Figure 1) VCC = 4.5 V

VCC = 6.0 V

0
0
0

1000

500
400

ns

DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

Guaranteed Limit

Symbol

Parameter

Test Conditions

V

CC
V

– 55 to

25_C

v

85_Cv 125_C

Unit

V

IH

Minimum High–Level Input
Voltage

V

out

= 0.1 V or VCC – 0.1 V

|I

out

| v 20 µA

2.0

4.5

6.0

1.5

3.15

4.2

1.5

3.15

4.2

1.5

3.15

4.2

V

V

IL

Maximum Low–Level Input
Voltage

V

out

= 0.1 V or VCC – 0.1 V

|I

out

| v 20 µA

2.0

4.5

6.0

0.5

1.35

1.8

0.5

1.35

1.8

0.5

1.35

1.8

V

Vin = VIH or V

IL

|I

out

| v 20 µA

2.0

4.5

6.0

1.9

4.4

5.9

1.9

4.4

5.9

1.9

4.4

5.9

Vin = VIH or VIL|I

out

| v 4.0 mA

|I

out

| v 5.2 mA

4.5

6.0

3.98

5.48

3.84

5.34

3.7

5.2

Vin = VIH or V

IL

|I

out

| v 20 µA

2.0

4.5

6.0

0.1

0.1

0.1

0.1

0.1

0.1

0.1

0.1

0.1

Vin = VIH or VIL|I

out

| v 4.0 mA

|I

out

| v 5.2 mA

4.5

6.0

0.26

0.26

0.33

0.33

0.4

0.4

This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir­cuit. For proper operation, Vin and
V

out

should be constrained to the

range GND v (Vin or V

out

) v VCC.

Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.

V

OH

V

OL

Minimum High–Level Output
Voltage

Maximum Low–Level Output
Voltage

V

V