Motorola MC74HC153D, MC74HC153N Datasheet

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SEMICONDUCTOR TECHNICAL DATA

1

REV 6

 Motorola, Inc. 1995

10/95

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High–Performance Silicon–Gate CMOS

The MC74HC153 is identical in pinout to the LS153. The device inputs are
compatible with standard CMOS outputs; with pullup resistors, they are
compatible with LSTTL outputs.

The Address Inputs select one of four Data Inputs from each multiplexer.
Each multiplexer has a n active–low Strobe control and a noninverting
output.

The HC153 is similar in function to the HC253, which has 3–state outputs.

• Output Drive Capability: 10 LSTTL Loads

• Outputs Directly Interface to CMOS, NMOS, and TTL

• Operating Voltage Range: 2 to 6 V

• Low Input Current: 1 µA

• High Noise Immunity Characteristic of CMOS Devices

• In Compliance with the Requirements Defined by JEDEC Standard

No. 7A

• Chip Complexity: 108 FETs or 27 Equivalent Gates

LOGIC DIAGRAM

1

6
5
4
3

14

A0

7

9

Y

a

Y

b

D0

a

STROBE a

ADDRESS

INPUTS

DATA–

WORD a

INPUTS

PIN 16 = V

CC

PIN 8 = GND

A1

2

10
11
12
13

15

STROBE b

D1

a

D2

a

D3

a

D0

b

DATA–

WORD b

INPUTS

D1

b

D2

b

D3

b

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FUNCTION TABLE

PIN ASSIGNMENT

D0, D1, D2, and D3 = the level of the
respective data input.

Inputs Output

A1 A0 Strobe Y

X X H L
L L L D0
L H L D1
H L L D2
H H L D3

13

14

15

16

9

10

11

125

4

3

2

1

8

7

6

STROBE a

D3

a

A1

GND

D3

b

A0

STROBE b

V

CC

D2

a

D1

a

D0

a

Y

a

D2

b

D1

b

D0

b

Y

b

D SUFFIX

SOIC PACKAGE

CASE 751B–05

N SUFFIX

PLASTIC PACKAGE

CASE 648–08

1

16

1

16

ORDERING INFORMATION

MC74HCXXXN
MC74HCXXXD

Plastic
SOIC

MC74HC153

MOTOROLA High–Speed CMOS Logic Data

DL129 — Rev 6

2

MAXIMUM RATINGS*

Symbol

Parameter

Value

Unit

V

CC

DC Supply Voltage (Referenced to GND)

– 0.5 to + 7.0

V

V

in

DC Input Voltage (Referenced to GND)

– 1.5 to VCC + 1.5

V

V

out

DC Output Voltage (Referenced to GND)

– 0.5 to VCC + 0.5

V

I

in

DC Input Current, per Pin

± 20

mA

I

out

DC Output Current, per Pin

± 25

mA

I

CC

DC Supply Current, VCC and GND Pins

± 50

mA

P

D

Power Dissipation in Still Air Plastic DIP†

SOIC Package†

750
500

mW

T

stg

Storage Temperature

– 65 to + 150

_

C

T

L

Lead Temperature, 1 mm from Case for 10 Seconds

(Plastic DIP or SOIC Package)

260

_

C

*Maximum Ratings are those values beyond which damage to the device may occur.

Functional operation should be restricted to the Recommended Operating Conditions.

†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C

SOIC Package: – 7 mW/_C from 65_ to 125_C

For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min

Max

Unit

V

CC

DC Supply Voltage (Referenced to GND)

2.0

6.0

V

Vin, V

out

DC Input Voltage, Output Voltage (Referenced to GND)

0

V

CC

V

T

A

Operating Temperature, All Package Types

– 55

+ 125

_

C

tr, t

f

Input Rise and Fall Time VCC = 2.0 V

(Figure 1) VCC = 4.5 V

VCC = 6.0 V

0
0
0

1000

500
400

ns

DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

Guaranteed Limit

Symbol

Parameter

Test Conditions

V

CC
V

– 55 to

25_C

v

85_Cv 125_C

Unit

V

IH

Minimum High–Level Input
Voltage

V

out

= 0.1 V or VCC – 0.1 V

|I

out

| v 20 µA

2.0

4.5

6.0

1.5

3.15

4.2

1.5

3.15

4.2

1.5

3.15

4.2

V

V

IL

Maximum Low–Level Input
Voltage

V

out

= 0.1 V or VCC – 0.1 V

|I

out

| v 20 µA

2.0

4.5

6.0

0.3

0.9

1.2

0.3

0.9

1.2

0.3

0.9

1.2

V

Vin = VIH or V

IL

|I

out

| v 20 µA

2.0

4.5

6.0

1.9

4.4

5.9

1.9

4.4

5.9

1.9

4.4

5.9

Vin = VIH or VIL|I

out

| v 4.0 mA

|I

out

| v 5.2 mA

4.5

6.0

3.98

5.48

3.84

5.34

3.70

5.20

Vin = VIH or V

IL

|I

out

| v 20 µA

2.0

4.5

6.0

0.1

0.1

0.1

0.1

0.1

0.1

0.1

0.1

0.1

Vin = VIH or VIL|I

out

| v 4.0 mA

|I

out

| v 5.2 mA

4.5

6.0

0.26

0.26

0.33

0.33

0.40

0.40

I

in

Maximum Input Leakage Current

Vin = VCC or GND

6.0

± 0.1

± 1.0

± 1.0

µA

I

CC

Maximum Quiescent Supply
Current (per Package)

Vin = VCC or GND
I

out

= 0 µA

6.0

8

80

160

µA

NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).

This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir­cuit. For proper operation, Vin and
V

out

should be constrained to the

range GND v (Vin or V

out

) v VCC.

Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.

V

OH

V

OL

Minimum High–Level Output
Voltage

Maximum Low–Level Output
Voltage

V

V