MC2833
2
MOTOROLA ANALOG IC DEVICE DATA
MAXIMUM RATINGS
Ratings Symbol Value Unit
Power Supply Voltage V
CC
10 (max) V
Operating Supply Voltage Range V
CC
2.8–9.0 V
Junction Temperature T
J
+ 150 °C
Operating Ambient Temperature T
A
– 30 to + 75 °C
Storage Temperature Range T
stg
– 65 to + 150 °C
ELECTRICAL CHARACTERISTICS (V
CC
= 4.0 V, TA = 25°C, unless otherwise noted)
Characteristics
Symbol Pin Min Typ Max Unit
Drain Current (No input signal) I
CC
10 1.7 2.9 4.3 mA
FM MODULATOR
Output RF Voltage (fo = 16.6 MHz) V
out
RF 14 60 90 130 mVrms
Output DC Voltage (No input signal) Vdc 14 2.2 2.5 2.8 V
Modulation Sensitivity (fo = 16.6 MHz)
Modulation Sensitivity (Vin = 0.8 V to 1.2 V)
SEN 3
14
7.0
–
10
–
15–Hz/mVdc
Maximum Deviation (fo = 16.6 MHz)
Maximum Deviation (Vin = 0 V to 2.0 V)
Fdev 3
14
3.0
–
5.0
–
10
–
kHz
MIC AMPLIFIER
Closed Loop Voltage Gain (Vin = 3.0 mVrms)
Closed Loop Voltage Gain (fin = 1.0 kHz)
A
v
4
5
27
–
30
–
33
–
dB
Output DC Voltage (No input signal) V
out
dc 4 1.1 1.4 1.7 V
Output Swing Voltage (Vin = 30 mVrms)
Output Swing Voltage (fin = 1.0 kHz)
V
out
p–p 4 0.8 1.2 1.6 Vp–p
Total Harmonic Distortion (Vin = 3.0 mVrms)
Total Harmonic Distortion (fin = 1.0 kHz)
THD 4 – 0.15 2.0 %
AUXILIARY TRANSISTOR STATIC CHARACTERISTICS
Characteristics Symbol Min Typ Max Unit
Collector Base Breakdown Voltage (IC = 5.0 µA) V
(BR)CBO
15 45 – V
Collector Emitter Breakdown Voltage (IC = 200 µA) V
(BR)CEO
10 15 – V
Collector Substrate Breakdown Voltage (IC = 50 µA) V
(BR)CSO
– 70 – V
Emitter Base Breakdown Voltage (IE = 50 µA) V
(BR)EBO
– 6.2 – V
Collector Base Cut Off Current (VCB = 10 V)
Collector Base Cut Off Current (IE = 0)
I
CBO
– – 200 nA
DC Current Gain (IC = 3.0 mA)
DC Current Gain (VCE = 3.0 V)
h
FE
40 150 – –
AUXILIARY TRANSISTOR DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product (VCE = 3.0 V)
Current Gain Bandwidth Product (IC = 3.0 mA)
f
T
– 500 – MHz
Collector Base Capacitance (VCE = 3.0 V)
Collector Base Capacitance (IC = 0)
C
CB
– 2.0 – pF
Collector Substrate Capacitance (VCS = 3.0 V)
Collector Substrate Capacitance (IC = 0)
C
CS
– 3.3 – pF