Motorola MC14520BCP, MC14520BDW, MC14518BCL, MC14518BCP, MC14520BCL Datasheet

MOTOROLA CMOS LOGIC DATA
409
MC14518B MC14520B
  
The MC14518B dual BCD counter and the MC14520B dual binary counter are constructed with MOS P–channel and N–channel enhancement mode devices in a single m onolithic structure. Each consists of two i dentical, independent, internally synchronous 4–stage counters. The counter stages are type D flip–flops, w ith interchangeable Clock and Enable lines f or incrementing on either the positive–going or negative–going transition as required when cascading multiple stages. Each counter can be cleared by applying a high level on the Reset line. In addition, the MC14518B will count out of all undefined states within two clock periods. These complementary MOS up counters find primary use in multi–stage synchronous or ripple counting applications requiring low power dissipation and/or high noise immunity.
Diode Protection on All Inputs
Supply Voltage Range = 3.0 Vdc to 18 Vdc
Internally Synchronous for High Internal and External Speeds
Logic Edge–Clocked Design — Incremented on Positive Transition of
Clock or Negative Transition on Enable
Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range
MAXIMUM RATINGS* (Voltages Referenced to V
SS
)
Symbol
Parameter Value Unit
V
DD
DC Supply Voltage – 0.5 to + 18.0 V
Vin, V
out
Input or Output Voltage (DC or Transient) 0.5 to VDD + 0.5 V
Iin, I
out
Input or Output Current (DC or Transient), per Pin
± 10 mA
P
D
Power Dissipation, per Package† 500 mW
T
stg
Storage Temperature – 65 to + 150
_
C
T
L
Lead Temperature (8–Second Soldering) 260
_
C
*Maximum Ratings are those values beyond which damage to the device may occur. †Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C Ceramic “L” Packages: – 12 mW/_C From 100_C To 125_C
TRUTH TABLE
Clock Enable Reset Action
1 0 Increment Counter
0 0 Increment Counter
X 0 No Change
X 0 No Change
0 0 No Change 1 0 No Change X X 1 Q0 thru Q3 = 0
X = Don’t Care

SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
REV 3 1/94
 
L SUFFIX
CERAMIC
CASE 620
ORDERING INFORMATION
MC14XXXBCP Plastic MC14XXXBCL Ceramic MC14XXXBDW SOIC
TA = – 55° to 125°C for all packages.
P SUFFIX
PLASTIC
CASE 648
DW SUFFIX
SOIC
CASE 751G
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, pre­cautions must be taken to avoid applications of any voltage higher than maximum rated volt­ages to this high–impedance circuit. For proper operation, Vin and V
out
should be constrained
to the range VSS v (Vin or V
out
) v VDD.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either V
SS
or VDD). Unused outputs must be left open.
BLOCK DIAGRAM
VDD = PIN 16
VSS = PIN 8
3 4 5 6
14
13
12
11
C
C
R
R
Q3
Q2
Q1
Q0
Q3
Q2
Q1
Q0
CLOCK
1 2
CLOCK
ENABLE
ENABLE
7
9
10
15
MOTOROLA CMOS LOGIC DATAMC14518B MC14520B
410
ELECTRICAL CHARACTERISTICS (Voltages Referenced to V
SS
)
V
– 55_C 25_C 125_C
Characteristic
Symbol
V
DD
Vdc
Min Max Min Typ # Max Min Max
Unit
Output Voltage
“0” Level
Vin = VDD or 0
V
OL
5.0 10 15
— — —
0.05
0.05
0.05
— — —
0 0 0
0.05
0.05
0.05
— — —
0.05
0.05
0.05
Vdc
“1” Level
Vin = 0 or V
DD
V
OH
5.0 10 15
4.95
9.95
14.95
— — —
4.95
9.95
14.95
5.0 10 15
— — —
4.95
9.95
14.95
— — —
Vdc
Input Voltage
“0” Level (VO = 4.5 or 0.5 Vdc) (VO = 9.0 or 1.0 Vdc) (VO = 13.5 or 1.5 Vdc)
V
IL
5.0 10 15
— — —
1.5
3.0
4.0
— — —
2.25
4.50
6.75
1.5
3.0
4.0
— — —
1.5
3.0
4.0
Vdc
“1” Level (VO = 0.5 or 4.5 Vdc) (VO = 1.0 or 9.0 Vdc) (VO = 1.5 or 13.5 Vdc)
V
IH
5.0 10 15
3.5
7.0 11
— — —
3.5
7.0 11
2.75
5.50
8.25
— — —
3.5
7.0 11
— — —
Vdc
Output Drive Current
(VOH = 2.5 Vdc) Source (VOH = 4.6 Vdc) (VOH = 9.5 Vdc) (VOH = 13.5 Vdc)
I
OH
5.0
5.0 10 15
– 3.0
– 0.64
– 1.6 – 4.2
— — — —
– 2.4
– 0.51
– 1.3 – 3.4
– 4.2 – 0.88 – 2.25
– 8.8
— — — —
– 1.7
– 0.36
– 0.9 – 2.4
— — — —
mAdc
(VOL = 0.4 Vdc) Sink (VOL = 0.5 Vdc) (VOL = 1.5 Vdc)
I
OL
5.0 10 15
0.64
1.6
4.2
— — —
0.51
1.3
3.4
0.88
2.25
8.8
— — —
0.36
0.9
2.4
— — —
mAdc
Input Current I
in
15 ± 0.1 ±0.00001 ± 0.1 ± 1.0 µAdc
Input Capacitance
(Vin = 0)
C
in
5.0 7.5 pF
Quiescent Current
(Per Package)
I
DD
5.0 10 15
— — —
5.0 10 20
— — —
0.005
0.010
0.015
5.0 10 20
— — —
150 300 600
µAdc
Total Supply Current**†
(Dynamic plus Quiescent, Per Package) (CL = 50 pF on all outputs, all buffers switching)
I
T
5.0 10 15
IT = (0.6 µA/kHz) f + I
DD
IT = (1.2 µA/kHz) f + I
DD
IT = (1.7 µA/kHz) f + I
DD
µAdc
#Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. **The formulas given are for the typical characteristics only at 25_C. †To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.002.
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Q1
B
Q2
B
Q3
B
R
B
V
DD
C
B
E
B
Q0
B
Q1
A
Q0
A
E
A
C
A
V
SS
R
A
Q3
A
Q2
A
MOTOROLA CMOS LOGIC DATA
411
MC14518B MC14520B
SWITCHING CHARACTERISTICS* (C
L
= 50 pF, TA = 25_C)
All Types
Characteristic
Symbol
V
DD
Min Typ # Max
Unit
Output Rise and Fall Time
t
TLH
, t
THL
= (1.5 ns/pF) CL + 25 ns
t
TLH
, t
THL
= (0.75 ns/pF) CL + 12.5 ns
t
TLH
, t
THL
= (0.55 ns/pF) CL + 9.5 ns
t
TLH
,
t
THL
5.0 10 15
— — —
100
50 40
200 100
80
ns
Propagation Delay Time
Clock to Q/Enable to Q
t
PLH
, t
PHL
= (1.7 ns/pF) CL + 215 ns
t
PLH
, t
PHL
= (0.66 ns/pF) CL + 97 ns
t
PLH
, t
PHL
= (0.5 ns/pF) CL + 75 ns
t
PLH
,
t
PHL
5.0 10 15
— — —
280 115
80
560 230 160
ns
Reset to Q
t
PHL
= (1.7 ns/pF) CL + 265 ns
t
PHL
= (0.66 ns/pF) CL + 117 ns
t
PHL
= (0.66 ns/pF) CL + 95 ns
t
PHL
5.0 10 15
— — —
330 130
90
650 230 170
ns
Clock Pulse Width t
w(H)
t
w(L)
5.0 10 15
200 100
70
100
50 35
— — —
ns
Clock Pulse Frequency f
cl
5.0 10 15
— — —
2.5
6.0
8.0
1.5
3.0
4.0
MHz
Clock or Enable Rise and Fall Time t
THL
, t
TLH
5.0 10 15
— — —
— — —
15
5 4
µs
Enable Pulse Width t
WH(E)
5.0 10 15
440 200 140
220 100
70
— — —
ns
Reset Pulse Width t
WH(R)
5.0 10 15
280 120
90
125
55 40
— — —
ns
Reset Removal Time t
rem
5.0 10 15
– 5
15 20
– 45 – 15
– 5
— — —
ns
*The formulas given are for the typical characteristics only at 25_C. #Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
Figure 1. Power Dissipation Test Circuit and Waveform
PULSE
GENERATOR
VARIABLE
WIDTH
C
L
C
L
C
L
C
L
V
DD
V
SS
V
SS
500
µ
F
0.01
µ
F
CERAMIC
20 ns
50%
10%
90%
20 ns
I
D
Q3
Q2
Q1
Q0
C
E R
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