MOTOROLA CMOS LOGIC DATA
409
MC14518B MC14520B
The MC14518B dual BCD counter and the MC14520B dual binary counter
are constructed with MOS P–channel and N–channel enhancement mode
devices in a single m onolithic structure. Each consists of two i dentical,
independent, internally synchronous 4–stage counters. The counter stages
are type D flip–flops, w ith interchangeable Clock and Enable lines f or
incrementing on either the positive–going or negative–going transition as
required when cascading multiple stages. Each counter can be cleared by
applying a high level on the Reset line. In addition, the MC14518B will count
out of all undefined states within two clock periods. These complementary
MOS up counters find primary use in multi–stage synchronous or ripple
counting applications requiring low power dissipation and/or high noise
immunity.
• Diode Protection on All Inputs
• Supply Voltage Range = 3.0 Vdc to 18 Vdc
• Internally Synchronous for High Internal and External Speeds
• Logic Edge–Clocked Design — Incremented on Positive Transition of
Clock or Negative Transition on Enable
• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range
MAXIMUM RATINGS* (Voltages Referenced to V
SS
)
Symbol
Parameter Value Unit
V
DD
DC Supply Voltage – 0.5 to + 18.0 V
Vin, V
out
Input or Output Voltage (DC or Transient) 0.5 to VDD + 0.5 V
Iin, I
out
Input or Output Current (DC or Transient),
per Pin
± 10 mA
P
D
Power Dissipation, per Package† 500 mW
T
stg
Storage Temperature – 65 to + 150
_
C
T
L
Lead Temperature (8–Second Soldering) 260
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
†Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C
Ceramic “L” Packages: – 12 mW/_C From 100_C To 125_C
TRUTH TABLE
Clock Enable Reset Action
1 0 Increment Counter
0 0 Increment Counter
X 0 No Change
X 0 No Change
0 0 No Change
1 0 No Change
X X 1 Q0 thru Q3 = 0
X = Don’t Care
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
REV 3
1/94
L SUFFIX
CERAMIC
CASE 620
ORDERING INFORMATION
MC14XXXBCP Plastic
MC14XXXBCL Ceramic
MC14XXXBDW SOIC
TA = – 55° to 125°C for all packages.
P SUFFIX
PLASTIC
CASE 648
DW SUFFIX
SOIC
CASE 751G
This device contains protection circuitry to
guard against damage due to high static
voltages or electric fields. However, precautions must be taken to avoid applications of
any voltage higher than maximum rated voltages to this high–impedance circuit. For proper
operation, Vin and V
out
should be constrained
to the range VSS v (Vin or V
out
) v VDD.
Unused inputs must always be tied to an
appropriate logic voltage level (e.g., either V
SS
or VDD). Unused outputs must be left open.
BLOCK DIAGRAM
VDD = PIN 16
VSS = PIN 8
3
4
5
6
14
13
12
11
C
C
R
R
Q3
Q2
Q1
Q0
Q3
Q2
Q1
Q0
CLOCK
1
2
CLOCK
ENABLE
ENABLE
7
9
10
15
MOTOROLA CMOS LOGIC DATAMC14518B MC14520B
410
ELECTRICAL CHARACTERISTICS (Voltages Referenced to V
SS
)
Min Max Min Typ # Max Min Max
V
OL
5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
0.05
0.05
0.05
Vdc
“1” Level
Vin = 0 or V
DD
V
OH
5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.95
9.95
14.95
—
—
—
Vdc
“0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
V
IL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
1.5
3.0
4.0
Vdc
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
V
IH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3.5
7.0
11
—
—
—
Vdc
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
I
OH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
– 1.7
– 0.36
– 0.9
– 2.4
—
—
—
—
mAdc
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
I
OL
5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.36
0.9
2.4
—
—
—
mAdc
Input Current I
in
15 — ± 0.1 — ±0.00001 ± 0.1 — ± 1.0 µAdc
Input Capacitance
(Vin = 0)
C
in
— — — — 5.0 7.5 — — pF
Quiescent Current
(Per Package)
I
DD
5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
—
—
—
150
300
600
µAdc
Total Supply Current**†
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
I
T
5.0
10
15
IT = (0.6 µA/kHz) f + I
DD
IT = (1.2 µA/kHz) f + I
DD
IT = (1.7 µA/kHz) f + I
DD
µAdc
#Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
**The formulas given are for the typical characteristics only at 25_C.
†To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.002.
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Q1
B
Q2
B
Q3
B
R
B
V
DD
C
B
E
B
Q0
B
Q1
A
Q0
A
E
A
C
A
V
SS
R
A
Q3
A
Q2
A
MOTOROLA CMOS LOGIC DATA
411
MC14518B MC14520B
SWITCHING CHARACTERISTICS* (C
L
= 50 pF, TA = 25_C)
Output Rise and Fall Time
t
TLH
, t
THL
= (1.5 ns/pF) CL + 25 ns
t
TLH
, t
THL
= (0.75 ns/pF) CL + 12.5 ns
t
TLH
, t
THL
= (0.55 ns/pF) CL + 9.5 ns
t
TLH
,
t
THL
5.0
10
15
—
—
—
100
50
40
200
100
80
ns
Propagation Delay Time
Clock to Q/Enable to Q
t
PLH
, t
PHL
= (1.7 ns/pF) CL + 215 ns
t
PLH
, t
PHL
= (0.66 ns/pF) CL + 97 ns
t
PLH
, t
PHL
= (0.5 ns/pF) CL + 75 ns
t
PLH
,
t
PHL
5.0
10
15
—
—
—
280
115
80
560
230
160
ns
Reset to Q
t
PHL
= (1.7 ns/pF) CL + 265 ns
t
PHL
= (0.66 ns/pF) CL + 117 ns
t
PHL
= (0.66 ns/pF) CL + 95 ns
t
PHL
5.0
10
15
—
—
—
330
130
90
650
230
170
ns
Clock Pulse Width t
w(H)
t
w(L)
5.0
10
15
200
100
70
100
50
35
—
—
—
ns
Clock Pulse Frequency f
cl
5.0
10
15
—
—
—
2.5
6.0
8.0
1.5
3.0
4.0
MHz
Clock or Enable Rise and Fall Time t
THL
, t
TLH
5.0
10
15
—
—
—
—
—
—
15
5
4
µs
Enable Pulse Width t
WH(E)
5.0
10
15
440
200
140
220
100
70
—
—
—
ns
Reset Pulse Width t
WH(R)
5.0
10
15
280
120
90
125
55
40
—
—
—
ns
Reset Removal Time t
rem
5.0
10
15
– 5
15
20
– 45
– 15
– 5
—
—
—
ns
*The formulas given are for the typical characteristics only at 25_C.
#Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
Figure 1. Power Dissipation Test Circuit and Waveform
PULSE
GENERATOR
VARIABLE
WIDTH
C
L
C
L
C
L
C
L
V
DD
V
SS
V
SS
500
µ
F
0.01
µ
F
CERAMIC
20 ns
50%
10%
90%
20 ns
I
D
Q3
Q2
Q1
Q0
C
E
R