MOTOROLA MC14049BCP, MC14049BD, MC14049BF, MC14049BFL1 Datasheet

Semiconductor Components Industries, LLC, 1999
December, 1999 – Rev. 2
1 Publication Order Number:
1.5SMC6.8A T3/D
1.5SMCXXXAT3 Series
Zener Transient V oltage Suppressors
GENERAL DATA IS APPLICABLE TO ALL SERIES IN THIS GROUP
The SMC series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMC series is supplied in ON Semiconductor’s exclusive, cost-effective, highly reliable Surmetic package and is ideally suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications.
Specification Features:
Standard Zener Breakdown Voltage Range — 6.8 to 91 V
Stand–off Voltage Range — 5.8 to 78 V
Peak Power — 1500 Watts @ 1 ms
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 µA Above 10 V
UL Recognition
Maximum Temperature Coefficient Specified
Available in Tape and Reel
Response Time is Typically < 1 ns
Mechanical Characteristics: CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
POLARITY: Cathode indicated by molded polarity notch. When
operated in zener mode, will be positive with respect to anode
MOUNTING POSITION: Any LEADS: Modified L–Bend providing more contact area to bond pads MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
WAFER FAB LOCATION: Phoenix, Arizona ASSEMBLY/TEST LOCATION: Seremban, Malaysia
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation (1)
@ TL 25°C
P
PK
1500 Watts
Forward Surge Current (2)
@ TA = 25°C
I
FSM
200 Amps
Thermal Resistance from Junction to Lead (typical)
R
q
JL
15 °C/W
Operating and Storage Temperature Range TJ, T
stg
– 55 to +150 °C
NOTES: 1. Nonrepetitive current pulse per Figure 2 and derated above TA = 25°C per Figure 3.
NOTES: 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
5.8–78 VOLTS
1500 WATT PEAK POWER
Devices listed in
bold, italic
are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
Device Package Shipping
ORDERING INFORMATION
1.5SMCXXXA T3 SMC Tape and Reel 2500 Units/Reel
SMC
PLASTIC
CASE 403
http://onsemi.com
1.5SMCXXXAT3 Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) VF = 3.5 V Max, IF** = 100 A for all types.
Breakdown Voltage*
Working
Peak
Maximum
Reverse
Maximum
Reverse
Maximum
Reverse Voltage
Maximum
VBR @ I
T
Volts
Reverse
Voltage
Leakage
@ V
RWM
Surge
Current
@ I
RSM
(Clamping Voltage)
Temperature
Coefficient
Device
{{
Min Nom Max mA
V
RWM
Volts
I
R
µA
I
RSM
{
Amps
V
RSM
Volts
of V
BR
%/°C
Device
Marking
1.5SMC6.8AT3
1.5SMC7.5AT3
1.5SMC8.2AT3
1.5SMC9.1AT3
6.45
7.13
7.79
8.65
6.8
7.5
8.2
9.1
7.14
7.88
8.61
9.55
10 10 10
1
5.8
6.4
7.02
7.78
1000
500 200
50
143 132 124 112
10.5
11.3
12.1
13.4
0.057
0.061
0.065
0.068
6V8A 7V5A 8V2A 9V1A
1.5SMC10AT3
1.5SMC11AT3
1.5SMC12AT3
1.5SMC13AT3
9.5
10.5
11.4
12.4
10 11 12 13
10.5
11.6
12.6
13.7
1 1 1 1
8.55
9.4
10.2
11.1
10
5 5 5
103
96 90 82
14.5
15.6
16.7
18.2
0.073
0.075
0.078
0.081
10A 11A 12A 13A
1.5SMC15AT3
1.5SMC16AT3
1.5SMC18AT3
1.5SMC20AT3
14.3
15.2
17.1 19
15
16 18 20
15.8
16.8
18.9 21
1
1 1 1
12.8
13.6
15.3
17.1
5
5 5 5
71
67
59.5 54
21.2
22.5
25.2
27.7
0.084
0.086
0.088
0.09
15A
16A 18A 20A
1.5SMC22AT3
1.5SMC24AT3
1.5SMC27AT3
1.5SMC30AT3
20.9
22.8
25.7
28.5
22
24
27 30
23.1
25.2
28.4
31.5
1
1
1 1
18.8
20.5
23.1
25.6
5
5
5 5
49
45
40 36
30.6
33.2
37.5
41.4
0.092
0.094
0.096
0.097
22A
24A
27A 30A
1.5SMC33AT3
1.5SMC36AT3
1.5SMC39AT3
1.5SMC43AT3
31.4
34.2
37.1
40.9
33 36 39 43
34.7
37.8 41
45.2
1 1 1 1
28.2
30.8
33.3
36.8
5 5 5 5
33 30 28
25.3
45.7
49.9
53.9
59.3
0.098
0.099
0.1
0.101
33A 36A 39A 43A
1.5SMC47AT3
1.5SMC51AT3
1.5SMC56AT3
1.5SMC62AT3
44.7
48.5
53.2
58.9
47
51 56 62
49.4
53.6
58.8
65.1
1
1 1 1
40.2
43.6
47.8 53
5
5 5 5
23.2
21.4
19.5
17.7
64.8
70.1 77 85
0.101
0.102
0.103
0.104
47A
51A 56A 62A
1.5SMC68AT3
1.5SMC75AT3
1.5SMC82AT3
1.5SMC91AT3
64.6
71.3
77.9
86.5
68
75
82 91
71.4
78.8
86.1
95.5
1
1
1 1
58.1
64.1
70.1
77.8
5
5
5 5
16.3
14.6
13.3 12
92
103
113 125
0.104
0.105
0.105
0.106
68A
75A
82A 91A
Devices listed in bold, italic are ON Semiconductor Preferred devices.
* * VBR measured at pulse test current IT at an ambient temperaure of 25°C.
* * 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
{{
Surge current waveform per Figure 2 and derate per Figure 3 of General Data — 1500 Watt at the beginning of this group.
{{
T3 suffix designates tape and reel of 2500 units.
1.5SMCXXXAT3 Series
http://onsemi.com
3
P , PEAK POWER (kW)
P
NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 2
tP, PULSE WIDTH
1
10
100
0.1
µs1 µs10 µs 100 µs
1 ms 10 ms
Figure 1. Pulse Rating Curve
01234
0
50
100
t, TIME (ms)
VALUE (%)
HALF VALUE –
I
RSM
2
PEAK VALUE – I
RSM
t
r
tr≤ 10 µs
Figure 2. Pulse Waveform
Figure 3. Pulse Derating Curve
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ T
A
= 25 C°
100
80 60 40 20
0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
120
140
160
t
P
PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF I
RSM
.
VZ, INSTANTANEOUS INCREASE IN VZ ABOVE VZ (NOM) (VOLTS)
0.3 0.5 0.7 1 2 3 5 7 10 20 30
I
Z
, ZENER CURRENT (AMPS)
1000
500 200
100
50
1
2
5
10
20
TL=25°C tP=10µs
VZ(NOM) = 6.8 TO 13 V
20 V
24 V
43 V
75 V
120 V
180 V
Figure 4. Dynamic Impedance
UL RECOGNITION
The entire series has Underwriters Laboratory
Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #116110. Many competitors only have one or two devices recognized or have recognition in a non-protective category. Some competitors have no recognition at all. With the UL497B recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance Conditioning, Temperature test, Dielectric Voltage-Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their Protector category .
1.5SMCXXXAT3 Series
http://onsemi.com
4
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitive effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 5.
The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 6. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. The SMC series have a very good response time, typically < 1 ns and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout,
minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot.
Some input impedance represented by Zin is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions and at a lead temperature of 25°C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 7. Average power must be derated as the lead or ambient temperature rises above 25°C. The average power derating curve normally given on data sheets may be normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 µs pulse. However, when the derating factor for a given pulse of Figure 7 is multiplied by the peak power value of Figure 1 for the same pulse, the results follow the expected trend.
1.5SMCXXXAT3 Series
http://onsemi.com
5
V
L
V
V
in
Vin (TRANSIENT)
V
L
t
d
V
Vin (TRANSIENT)
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
tD = TIME DELAY DUE TO CAPACITIVE EFFECT
t t
Figure 5. Figure 6.
Figure 7. Typical Derating Factor for Duty Cycle
DERATING FACTOR
1 ms
10 µs
1
0.7
0.5
0.3
0.05
0.1
0.2
0.01
0.02
0.03
0.07
100 µs
0.1 0.2 0.5 2 5 10 501 20 100 D, DUTY CYCLE (%)
PULSE WIDTH
10 ms
TYPICAL PROTECTION CIRCUIT
V
in
V
L
Z
in
LOAD
1.5SMCXXXAT3 Series
http://onsemi.com
6
OUTLINE DIMENSIONS
1500 Watt Peak Power
Transient Voltage Suppressors – Surface Mounted
CASE 403
(SMC)
(Refer to Section 10 of the TVS/Zener Data Book (DL150/D) for Surface Mount, Thermal Data and Footprint Information.)
SMC Footprint
0.171
4.343
0.110
2.794
0.150
3.810
mm
inches
A
S
B
C
D
KP
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
MIN MINMAX MAX
INCHES MILLIMETERS
DIM
A B C D H J K P S
6.60
5.59
1.90
2.92
0.051
0.15
0.76
7.75
7.11
6.10
2.41
3.07
0.152
0.30
1.27
8.13
0.260
0.220
0.075
0.115
0.0020
0.006
0.030
0.305
0.280
0.240
0.095
0.121
0.0060
0.012
0.050
0.320
0.51 REF0.020 REF
J
1.5SMCXXXAT3 Series
http://onsemi.com
7
Notes
1.5SMCXXXAT3 Series
http://onsemi.com
8
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability , including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly , any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer .
PUBLICATION ORDERING INFORMATION
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
T oll Free from Hong Kong 800–4422–3781
Email: ONlit–asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, T okyo, Japan 141–8549
Phone: 81–3–5487–8345 Email: r14153@onsemi.com
Fax Response Line: 303–675–2167
800–344–3810 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com For additional information, please contact your local
Sales Representative.
1N6267A/D
North America Literature Fulfillment:
Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 T oll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: ONlit@hibbertco.com
N. American Technical Support: 800–282–9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (M–F 2:30pm to 5:00pm Munich Time)
Email: ONlit–german@hibbertco.com
French Phone: (+1) 303–308–7141 (M–F 2:30pm to 5:00pm Toulouse Time)
Email: ONlit–french@hibbertco.com
English Phone: (+1) 303–308–7142 (M–F 1:30pm to 5:00pm UK Time)
Email: ONlit@hibbertco.com
Loading...