Motorola M4N26 Datasheet

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SEMICONDUCTOR TECHNICAL DATA
    
The M4N26 device consists of a gallium arsenide infrared emitting diode
optically coupled to a monolithic silicon phototransistor detector.
Most Economical Optoisolator Choice for Medium Speed, Switching Applications
Meets or Exceeds All JEDEC Registered Specifications
General Purpose Switching Circuits
Interfacing and coupling systems of different potentials and impedances
I/O Interfacing
Solid State Relays
Order this document
by M4N26/D

STYLE 1 PLASTIC
6
1
STANDARD THRU HOLE
SCHEMATIC
MAXIMUM RATINGS
INPUT LED
Reverse Voltage V Forward Current — Continuous I LED Power Dissipation @ TA = 25°C
with Negligible Power in Output Detector
Derate above 25°C
OUTPUT TRANSISTOR
Collector–Emitter Voltage V Emitter–Collector Voltage V Collector–Base Voltage V Collector Current — Continuous I Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LED
Derate above 25°C
TOTAL DEVICE
Isolation Surge Voltage
(Peak ac Voltage, 60 Hz, 1 sec Duration)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C Ambient Operating Temperature Range Storage Temperature Range Soldering Temperature (10 sec, 1/16 from case) T
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
(TA = 25°C unless otherwise noted)
Rating
(1)
(2)
(2)
Symbol Value Unit
3 Volts
60 mA
100
1.41
30 Volts
7 Volts 70 Volts 50 mA
150
1.76
7500 Vac(pk)
250
2.94 –55 to +100 °C –55 to +150 °C
260 °C
mW/°C
mW/°C
mW/°C
P
CEO ECO CBO
P
V
ISO
P
T
T
R
F
D
C
D
D
A
stg
L
mW
mW
mW
1 2 3
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
6
5 4
Motorola Optoelectronics Device Data
Motorola, Inc. 1997
1
M4N26
ELECTRICAL CHARACTERISTICS
Characteristic
INPUT LED
Forward Voltage (IF = 10 mA) TA = 25°C
Reverse Leakage Current (VR = 3 V) I Capacitance (V = 0 V, f = 1 MHz) C
OUTPUT TRANSISTOR
Collector–Emitter Dark Current
(VCE = 10 V, TA = 25°C)
(VCE = 10 V, TA = 100°C) I Collector–Base Dark Current (VCB = 10 V) I Collector–Emitter Breakdown Voltage (IC = 1 mA) V Collector–Base Breakdown Voltage (IC = 100 µA) V Emitter–Collector Breakdown Voltage (IE = 100 µA) V Collector–Emitter Capacitance (f = 1 MHz, VCE = 0) C Collector–Base Capacitance (f = 1 MHz, VCB = 0) C Emitter–Base Capacitance (f = 1 MHz, VEB = 0) C
COUPLED
Output Collector Current (IF = 10 mA, VCE = 10 V) IC (CTR) Collector–Emitter Saturation Voltage (IC = 2 mA, IF = 50 mA) V Turn–On Time (IF = 10 mA, VCC = 10 V, RL = 100 ) Turn–Off Time (IF = 10 mA, VCC = 10 V, RL = 100 ) Rise Time (IF = 10 mA, VCC = 10 V, RL = 100 ) Fall Time (IF = 10 mA, VCC = 10 V, RL = 100 ) Isolation Voltage (f = 60 Hz, t = 1 sec) Isolation Resistance (V = 500 V) Isolation Capacitance (V = 0 V , f = 1 MHz)
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. For test circuit setup and waveforms, refer to Figure 14.
4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
(TA = 25°C unless otherwise noted)
TA = –55°C TA = 100°C
(3) (3)
(3)
(3)
(4)
(4)
(4)
(1)
Symbol Min Typ
V
R
I
CEO CEO
CBO (BR)CEO (BR)CBO (BR)ECO
CE CB EB
CE(sat)
t
on
t
off t
t
V
ISO
R
ISO
C
ISO
F
J
(2)
r f
2 (20) 7 (70) mA (%)
7500 Vac(pk) 10
(1)
— —
100 µA — 18 pF
1 50 nA — 1 µA — 0.2 nA 30 45 Volts 70 100 Volts
7 7.8 Volts — 7 pF — 19 pF — 9 pF
0.15 0.5 Volts — 2.8 µs — 4.5 µs — 2 µs — 2 µs
11
0.2 pF
1.15
1.3
1.05
Max Unit
1.5 — —
Volts
2
Motorola Optoelectronics Device Data
1.4
1.3
1.2
1.1
TA = –55°C
TA = 25°C
1.5 NORMALIZED TO: VCE = 10 V IF = 10 mA TA = 25
1.0
CTR
°
C
CE(sat) VCE
= 0.4 V
NCTR
NCTR
M4N26
(sat)
, FORWARD VOLTAGE (V)
F
V
1.0
0.9
0.8
0.7
TA = 85°C
0.5
NCTR, NORMALIZED CTR
1.0 1.0
IF, FORWARD CURRENT (mA)
10 1000.1
0
TA = 25°C
10 1000
IF, LED CURRENT (mA)
Figure 1. Forward Voltage vs. Forward Current Figure 2. Normalized Non–Saturated and
Saturated CTR, TA = 25°C vs. LED Current
1.5 NORMALIZED TO:
VCE = 10 V IF = 10 mA TA = 25
°
CTR
CE(sat) VCE
C
= 0.4 V
1.0
0.5
NCTR, NORMALIZED CTR
NCTR
TA = 50°C
NCTR
(sat)
1.5 NORMALIZED TO:
VCE = 10 V IF = 10 mA TA = 25
°
CTR
CE(sat) VCE
C
= 0.4 V
1.0
0.5
NCTR, NORMALIZED CTR
NCTR
TA = 70°C
NCTR
(sat)
0
1.0 IF, LED CURRENT (mA)
10 1000.1
Figure 3. Normalized Non–Saturated and Saturated
CTR, TA = 50°C vs. LED Current
1.5 NORMALIZED TO:
VCE = 10 V IF = 10 mA TA = 25
°
CTR
CE(sat) VCE
C
= 0.4 V
1.0 IF, LED CURRENT (mA)
1.0
0.5
NCTR, NORMALIZED CTR
0
0
1.0 IF, LED CURRENT (mA)
10 1000.1
Figure 4. Normalized Non–Saturated and Saturated
CTR, TA = 70°C vs. LED Current
NCTR
TA = 85°C
NCTR
(sat)
10 1000.1
Figure 5. Normalized Non–Saturated and Saturated
Motorola Optoelectronics Device Data
CTR, TA = 85°C vs. LED Current
3
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