Motorola LM833D, LM833N, LM833DR2 Datasheet

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Order this document by LM833/D

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The LM833 is a standard low–cost monolithic dual general–purpose
operational amplifier employing Bipolar technology with innovative
high–performance concepts for audio systems applications. With high
frequency PNP transistors, the LM833 offers low voltage noise

(4.5 nV/

Hz

), 15 MHz gain bandwidth product, 7.0 V/µs slew rate, 0.3 mV
input offset voltage with 2.0 µV/°C temperature coefficient of input offset
voltage. The LM833 output stage exhibits no deadband crossover distortion,
large output voltage swing, excellent phase and gain margins, low open loop
high frequency output impedance and symmetrical source/sink AC
frequency response.

The LM833 is specified over the automotive temperature range and is
available in the plastic DIP and SO–8 packages (P and D suffixes). For an
improved performance dual/quad version, see the MC33079 family .

• Low Voltage Noise: 4.5 nV/ Hz

Ǹ

• High Gain Bandwidth Product: 15 MHz

• High Slew Rate: 7.0 V/µs

• Low Input Offset Voltage: 0.3 mV

• Low T.C. of Input Offset Voltage: 2.0 µV/°C

• Low Distortion: 0.002%

• Excellent Frequency Stability

• Dual Supply Operation

DUAL OPERATIONAL

AMPLIFIER

SEMICONDUCTOR

TECHNICAL DATA

8

1

N SUFFIX

PLASTIC PACKAGE

CASE 626

8

1

D SUFFIX

PLASTIC PACKAGE

CASE 751

(SO–8)

MAXIMUM RATINGS

Rating Symbol Value Unit

Supply Voltage (VCC to VEE) V
Input Differential V oltage Range (Note 1) V
Input Voltage Range (Note 1) V
Output Short Circuit Duration (Note 2) t
Operating Ambient Temperature Range T
Operating Junction Temperature T
Storage Temperature T
Maximum Power Dissipation (Notes 2 and 3) P

NOTES: 1. Either or both input voltages must not exceed the magnitude of VCC or VEE.

2.Power dissipation must be considered to ensure maximum junction temperature
(TJ) is not exceeded (see power dissipation performance characteristic).

3.Maximum value at TA ≤ 85°C.

S

IDR

IR

SC

A
J

stg

D

+36 V

30 V

±15 V

Indefinite

–40 to +85 °C

+150 °C

–60 to +150 °C

500 mW

MOTOROLA ANALOG IC DEVICE DATA

PIN CONNECTIONS

V

Output 1

Inputs 1

V

EE

1

2

3

4

1

(Top View)

8

CC

7

Output 2

6

2

Inputs 2

5

ORDERING INFORMATION

Operating

Device

LM833N
LM833D

 Motorola, Inc. 1996 Rev 0

Temperature Range

TA = – 40° to +85°C

Package

Plastic DIP

SO–8

1

LM833

ELECTRICAL CHARACTERISTICS (V

Characteristic

Input Offset Voltage (RS = 10 Ω, VO = 0 V) V
Average Temperature Coefficient of Input Offset Voltage ∆VIO/∆T – 2.0 – µV/°C

RS = 10 Ω, VO = 0 V, TA = T
Input Offset Current (VCM = 0 V, VO = 0 V) I
Input Bias Current (VCM = 0 V, VO = 0 V) I
Common Mode Input Voltage Range V

Large Signal Voltage Gain (RL = 2.0 kΩ, VO = ±10 V A
Output Voltage Swing: V

RL = 2.0 kΩ, VID = 1.0 V V

RL = 2.0 kΩ, VID = 1.0 V V

RL = 10 kΩ, VID = 1.0 V V

RL = 10 kΩ, VID = 1.0 V V
Common Mode Rejection (Vin = ±12 V) CMR 80 100 – dB
Power Supply Rejection (VS = 15 V to 5.0 V, –15 V to –5.0 V) PSR 80 115 – dB
Power Supply Current (VO = 0 V, Both Amplifiers) I

low

to T

AC ELECTRICAL CHARACTERISTICS (V

Characteristic

Slew Rate (Vin = –10 V to +10 V, RL = 2.0 kΩ, AV = +1.0) S
Gain Bandwidth Product (f = 100 kHz) GBW 10 15 – MHz
Unity Gain Frequency (Open Loop) f
Unity Gain Phase Margin (Open Loop) θ
Equivalent Input Noise Voltage (RS = 100 Ω, f = 1.0 kHz) e

Equivalent Input Noise Current (f = 1.0 kHz) i
Power Bandwidth (VO = 27 Vpp, RL = 2.0 kΩ, THD ≤ 1.0%) BWP – 120 – kHz

Distortion (RL = 2.0 kΩ, f = 20 Hz to 20 kHz, VO = 3.0 V
Channel Separation (f = 20 Hz to 20 kHz) C

= +15 V, VEE = –15 V, TA = 25°C, unless otherwise noted.)

CC

Symbol Min Typ Max Unit

IO

high

IO
IB

ICR

VOL

O+
O–
O+
O–

D

= +15 V, VEE = –15 V, TA = 25°C, unless otherwise noted.)

CC

Symbol Min Typ Max Unit

R

U
m

n

n

, AV = +1.0) THD – 0.002 – %

rms

S

– 0.3 5.0 mV

– 10 200 nA
– 300 1000 nA
–

–12

90 110 – dB

10 13.7 –

– –14.1 –10

12 13.9 –

– –14.7 –12

– 4.0 8.0 mA

5.0 7.0 – V/µs

– 9.0 – MHz
– 60 – Deg
– 4.5 –

– 0.5 –

– –120 – dB

+14
–14

+12

–

nVńHz

pAńHz

V

Ǹ

Ǹ

Figure 1. Maximum Power Dissipation

versus T emperature

800

600

400

200

D

P , MAXIMUM POWER DISSIP ATION (mW)

0
–50 0 50 100 150

TA, AMBIENT TEMPERATURE (°C)

2

Figure 2. Input Bias Current versus T emperature

1000

VCC = +15 V

800

VEE = –15 V
VCM = 0 V

600

400

200

IB

I , INPUT BIAS CURRENT (nA)

0

–55 –25 0 25 50 75 100 125

°

TA, AMBIENT TEMPERATURE (

C)

MOTOROLA ANALOG IC DEVICE DATA

LM833

Figure 3. Input Bias Current versus

Supply V oltage

800

600

400

200

, INPUT BIAS CURRENT (nA)I

IB

0

5.0 10 15 20
VCC, |VEE|, SUPPLY VOLTAGE (V)

TA = 25°C

Figure 5. DC Voltage Gain

versus T emperature

110

105

VCC = +15 V
VEE = –15 V
RL = 2.0 k

Figure 4. Supply Current versus

Supply V oltage

10

8.0

6.0

4.0

S

2.0

I , SUPPLY CURRENT (mA)

0

0 5.0 10 15 20

V

CC

I

S

V

+

O

V

EE

VCC, |VEE|, SUPPLY VOLTAGE (V)

RL =

∞

TA = 25°C

Figure 6. DC V oltage Gain versus

Supply V oltage

110

RL = 2.0 k

Ω

100

TA = 25°C

Ω

100

95

VOL

A , DC VOLTAGE GAIN (dB)

90

–55 –25 0 25 50 75 100 125

TA, AMBIENT TEMPERATURE (°C)

Figure 7. Open Loop V oltage Gain and

Phase versus Frequency

120

100

80

60

VCC = +15 V

40

VEE = –15 V

Ω

RL = 2.0 k

20

TA = 25°C

VOL

A , OPEN LOOP VOLTAGE GAIN (dB)

0

1.0 10 100 1.0 k 10 k 100 k 1.0 M 10 M

f, FREQUENCY (Hz)

Phase

Gain

90

VOL

A , DC VOLTAGE GAIN (dB)

80

5.0 10 15 20

0

45

90

135

, EXCESS PHASE (DEGREES)

∅

180

20

15

10

5.0

GBW, GAIN BANDWIDTH PRODUCT (MHz)

0

VCC = +15 V
VEE = –15 V
f = 100 kHz

VCC, |VEE|, SUPPLY VOLTAGE (V)

Figure 8. Gain Bandwidth Product

versus T emperature

–25 0 25 50 75 100 125–55

TA, AMBIENT TEMPERATURE (°C)

MOTOROLA ANALOG IC DEVICE DATA

3