Motorola BSV52LT1 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
12 Vdc
Collector–Base Voltage V
CBO
20 Vdc
Collector Current — Continuous I
C
100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(1)
TA = 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance Junction to Ambient
R
q
JA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
TA = 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance Junction to Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature TJ, T
stg
–55 to +150 °C
DEVICE MARKING
BSV52LT1 = B2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc)
V
(BR)CEO
12 —
Vdc
Collector Cutoff Current
(VCB = 10 Vdc, IE = 0)
(VCB = 10 Vdc, IE = 0, TA = 125°C)
I
CBO
—
—
100
5.0
nAdc
µAdc
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Order this document
by BSV52LT1/D
SEMICONDUCTOR TECHNICAL DATA
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER
BSV52LT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (continued) (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
H
FE
25
40
25
—
120
—
—
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 300 µAdc)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
V
CE(sat)
—
—
—
300
250
400
mVdc
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
V
BE(sat)
700
—
850
1200
mVdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
f
T
400 —
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
C
obo
— 4.0
pF
Input Capacitance
(VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz)
C
ibo
— 4.5
pF
SWITCHING CHARACTERISTICS
Storage Time
(IC = IB1 = IB2 = 10 mAdc)
t
s
— 13
ns
Turn–On Time
(VBE = 1.5 Vdc, IC = 10 mAdc, IB = 3.0 mAdc)
t
on
— 12
ns
Turn–Off Time
(IC = 10 mAdc, IB = 3.0 mAdc)
t
off
— 18
ns
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